CN117712256A - Light emitting diode and light emitting device - Google Patents
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- CN117712256A CN117712256A CN202311588545.4A CN202311588545A CN117712256A CN 117712256 A CN117712256 A CN 117712256A CN 202311588545 A CN202311588545 A CN 202311588545A CN 117712256 A CN117712256 A CN 117712256A
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Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode and a light-emitting device, wherein the light-emitting diode comprises a semiconductor lamination, and the semiconductor lamination comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially laminated; the surface of the first semiconductor layer is provided with protruding particles, the outer surface of each protruding particle is coated with a film layer, a plurality of film layers are mutually spaced, and the refractive index r of each film layer is more than or equal to 1 and less than or equal to 2.6. According to the miniature light-emitting diode provided by the invention, the protruding particles on the surface of the first semiconductor layer are wrapped by the film layers with specific refractive indexes, so that the total reflection angle of the light-emitting surface of the light-emitting diode is increased, the problem of low light extraction efficiency caused by total reflection is reduced, the light-emitting brightness of the light-emitting diode is obviously improved, and the miniature light-emitting diode is especially suitable for the problem of low light-emitting brightness caused by the formation of the protruding particles on the surface of the semiconductor laminated layer of the light-emitting diode by dry etching.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technology, and in particular, to a light emitting diode and a light emitting device.
Background
A light emitting diode (Light Emitting Diode, abbreviated as LED) is a semiconductor light emitting element, which includes different light emitting materials and light emitting members, and is a solid semiconductor light emitting element whose core is a PN junction having light emitting characteristics. LEDs have the advantages of high luminous intensity, high efficiency, small volume, long service life, etc., and are considered to be one of the most potential light sources at present. The LED is widely applied to the fields of illumination, monitoring command, high-definition performance, high-end cinema, office display, conference interaction, virtual reality and the like.
In order to improve the light extraction efficiency, the surface of the semiconductor layer of the LED is generally roughened and etched, usually an N-type semiconductor layer, and the conventional wet etching is affected by solution batch, solution life, chip surface state, etc., so that the roughening depth stability is poor, the roughening depth is not easy to control, and especially for the epitaxial structure with a thinner N-type semiconductor layer, the roughening depth is easy to occur, which causes abnormality such as electric leakage. The roughening depth of the dry etching process can be controlled, and the stability is better, but as shown in fig. 1, relatively regular protruding particles are generated on the surface of the etched semiconductor layer, so that the light emitting angle of the light emitting surface is larger, and the brightness is lower than that of the light emitting diode formed by the wet etching process.
The invention provides a corresponding technical design for solving the problems of larger light emitting angle of a light emitting surface and lower light emitting brightness caused by protruding particles generated on the surface of a semiconductor laminated layer due to dry etching and the like.
It should be noted that the information disclosed in this background section is only for the purpose of increasing the understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person of ordinary skill in the art.
Disclosure of Invention
To solve the above-mentioned problems, an embodiment of the present invention provides a light emitting diode, including:
a semiconductor stack including a first semiconductor layer, a light emitting layer, and a second semiconductor layer stacked in this order;
the surface of the first semiconductor layer is provided with protruding particles, the outer surface of each protruding particle is coated with a film layer, a plurality of film layers are mutually spaced, and the refractive index r of each film layer is more than or equal to 1 and less than or equal to 2.6.
On the basis of the above embodiment, further, the outer surface of the film layer is a curved surface protruding towards one side of the outer surface of the light emitting diode.
On the basis of the above embodiment, further, an included angle β between the side wall of the film layer and the bottom surface of the film layer is 45 ° to 90 °.
On the basis of the above embodiment, the film layer is further prepared from at least one material selected from silicon oxide, silicon nitride, aluminum oxide and titanium dioxide.
Further, in the above embodiment, the distance between the plurality of film layers is 1 to 4 micrometers.
Further, in the above embodiment, the shortest distance d from the outer surface of the protruding particles to the outer surface of the film layer is 0.1 to 1.5um.
On the basis of the embodiment, further, n protruding particles are covered by 1 film layer, wherein n is greater than or equal to 1 and less than or equal to 3, and n is a positive integer.
On the basis of the above embodiment, further, the first semiconductor layer is an N-type semiconductor, and the second semiconductor is a P-type semiconductor; or the first semiconductor layer is a P-type semiconductor, and the second semiconductor layer is an N-type semiconductor.
Further, in the above embodiment, the outer surface of the side of the first semiconductor layer away from the light emitting layer is electrically connected with a first electrode.
Further, on the basis of the above embodiment, the height h of the first electrode 1 And the height h of the film layer 2 Ratio h of 1 ：h 2 ＝1～4：1。
On the basis of the above embodiment, further, the first electrode is made of a metal material or an alloy material, wherein the metal material is one of aluminum, copper, gold, nickel, titanium, platinum, chromium and germanium, and the alloy material is a combination of at least two metals including aluminum, copper, gold, nickel, titanium, platinum, chromium and germanium.
Further, in the above embodiment, a side surface of the second semiconductor layer away from the light emitting layer is provided with a current spreading layer.
Further, in addition to the above embodiments, the light emitting device further includes an omnidirectional reflector structure, where the omnidirectional reflector structure is located on a side of the current spreading layer away from the light emitting layer.
On the basis of the above embodiment, the light emitting device further comprises a substrate, wherein one side surface of the substrate is bonded on one side of the second semiconductor layer, which is far away from the light emitting layer, through a bonding layer; the other side face of the substrate is provided with a second electrode.
The invention also provides a light-emitting device which adopts the light-emitting diode as claimed in any of the above claims.
According to the miniature light-emitting diode provided by the invention, the protruding particles on the surface of the first semiconductor layer wrap a plurality of film layers with specific refractive indexes, so that the total reflection angle of the light-emitting surface of the light-emitting diode is increased, the problem of low light extraction efficiency caused by total reflection is reduced, and the light-emitting brightness of the light-emitting diode is obviously improved.
In the preferred embodiment, the outer surface of the film layer is a curved surface protruding towards the outer surface of the light emitting diode, so that a similar convex lens structure is formed, a better light gathering effect can be achieved, and the light emitting brightness of the light emitting diode is further improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, a brief description will be given below of the drawings required for the embodiments or the prior art descriptions, and it is obvious that some of the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a prior art micrograph of a semiconductor surface roughened by dry etching;
FIG. 2 is a schematic diagram of a light emitting diode according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a prior art dry etching roughened semiconductor stack surface structure;
fig. 4 is a schematic diagram of an embodiment of the semiconductor stack of fig. 2;
FIG. 5 is a schematic view of the structure of the protruding particle covering film layer of FIG. 4;
fig. 6 is a schematic view of the semiconductor stacked structure of embodiment 2;
fig. 7 is a schematic view of the semiconductor stacked structure of embodiment 3;
fig. 8 is a schematic structural diagram of a light emitting diode according to another embodiment of the present invention.
Reference numerals:
100-a first semiconductor layer; 200-a light emitting layer; 300-a second semiconductor layer; 110-protruding particles; 120-film layer; 410-a first extension electrode; 420-a first pad electrode; 411-a first ohmic contact layer; 500-current spreading layer; 511-a second ohmic contact layer; 512-conductive vias; 610-a transparent dielectric layer; 620-a reflective layer; 700-a substrate; 710—a bonding layer; 720-a second electrode; 800-insulating layer
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention; the technical features designed in the different embodiments of the invention described below can be combined with each other as long as they do not conflict with each other; all other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that the terms "center," "lateral," "upper," "lower," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present invention and simplify the description, and do not indicate or imply that the devices or components referred to must have a specific orientation or be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more. In addition, the term "comprising" and any variations thereof are meant to be "at least inclusive".
Example 1
An embodiment of the present invention provides a light emitting diode, referring to fig. 2, including:
a semiconductor stack including a first semiconductor layer 100, a light emitting layer 200, and a second semiconductor layer 300 stacked in this order;
in some embodiments, the first semiconductor layer 100 may be an N-type semiconductor layer, and may provide electrons to the light emitting layer 200 under the power supply. Preferably, the first semiconductor layer 100 includes an N-type doped nitride layer, an arsenide layer, or a phosphide layer, which may include an N-type impurity, which may include one of Si, ge, sn, or a combination thereof. The first semiconductor layer 100 may have a single-layer structure or a multi-layer structure having different compositions. The second semiconductor layer 300 may be a P-type semiconductor layer, and may provide holes to the light emitting layer 200 under the power supply. In some embodiments, the second semiconductor layer 300 includes a P-type doped nitride layer, an arsenide layer, or a phosphide layer. The P-doped nitride, arsenide, or phosphide layers may include one or more P-type impurities, which may include one or a combination of Mg, zn, C. The second semiconductor layer 300 may have a single-layer structure or a multi-layer structure having different compositions. In addition, in other embodiments, the first semiconductor layer 100 may be a P-type semiconductor layer, and the second semiconductor layer 300 may be an N-type semiconductor layer.
The light emitting layer 200 may be a Quantum Well (QW) structure. In some embodiments, the light emitting layer 200 may also be a multiple quantum Well structure (Multiple Quantum Well, abbreviated as MQW), wherein the multiple quantum Well structure includes a plurality of quantum Well layers (Well) and a plurality of quantum Barrier layers (Barrier) alternately arranged in a repetitive manner, such as a multiple quantum Well structure that may be GaN/AlGaN, inAlGaN/InAlGaN, inGaN/AlGaN, alGaInp/AlGaInP or AlInGaAS/AlGaAs. The composition and thickness of the well layer in the light-emitting layer 200 determine the wavelength of the generated light. To increase the light emitting efficiency of the light emitting layer 200, this may be achieved by varying the depth of the quantum wells, the number of layers, thickness, and/or other characteristics of the pairs of quantum wells and quantum barriers in the light emitting layer 200.
In this embodiment, the semiconductor epitaxial layer is preferably made of AlGaInP-based or GaAs-based material.
In a specific embodiment, the first semiconductor layer 100 is electrically connected to the first electrode on the outer surface of the side far away from the light emitting layer 200, preferably, the first electrode includes a first extension electrode 410, and may also include a first pad electrode 420, and the first extension electrode 410 may be in ohmic contact with the first semiconductor layer 100 through a first ohmic contact layer 411; wherein the first extension electrode 410 is a metal material or an alloy material, the metal material is one of aluminum, copper, gold, nickel, titanium, platinum, chromium, and germanium, and the alloy material is a combination of at least two metals including aluminum, copper, gold, nickel, titanium, platinum, chromium, and germanium; the material of the first ohmic contact layer 411 is GaAs.
Further, the light emitting diode further includes a substrate 700 for bonding, and in particular and preferably, in an embodiment of a process for manufacturing the light emitting diode, a semiconductor stack of the light emitting diode element is provided first, as shown in fig. 2, where the semiconductor stack includes a first surface S1 and a second surface S2 opposite to the first surface S1, and the first surface S1 is closer to the first semiconductor layer 100 than the second surface S2; after the second surface S2 of the semiconductor stack is bonded and transferred to the substrate 700 through the bonding layer 710, the original epitaxial growth substrate of the semiconductor stack of the light emitting diode element is removed, and the bonding between the substrate 700 and the semiconductor stack is completed.
The substrate 700 is a conductive substrate, and is made of a conductive material, preferably a metal conductive material, or GaP, siC, si, gaAs with conductive performance; the second electrode 720 is disposed on the bottom side of the substrate 700 and is electrically connected to the second type semiconductor layer 300 through the substrate 700.
Generally, roughening the surface of the first semiconductor layer 100 of the LED is performed, and the etching is performed by wet etching or dry etching; wherein, a roughening is formed on the surface of the first semiconductor layer 100 by wet etching, so as to improve the light extraction efficiency, but the stability of the roughening depth is poor due to the influence of the wet etching on the solution batch, the solution life, the chip surface state and the like, and the roughening depth is not easy to control, especially for the epitaxial structure with a thinner N-type semiconductor layer, the roughening depth is easy to occur, so that the abnormality such as electric leakage and the like is caused; the roughening depth can be controlled by dry etching process, and the stability is better, but the surface of the etched semiconductor layer will generate relatively regular protruding particles, as shown in fig. 3, resulting in larger light emitting angle of the light emitting surface, total reflection, and lower brightness of the light emitting diode than wet etching process. In order to have the advantages of wet etching and wet etching, the following inventive concept was designed:
taking dry etching as an example, referring to fig. 2 and 4, protruding particles 110 are provided on the surface of the first semiconductor layer 100, the outer surface of the protruding particles 110 is coated with a film layer 120, a plurality of the film layers 120 are spaced from each other, and the refractive index r of the film layer 120 is 1-2.6; preferably, the refractive index r is 1.ltoreq.r.ltoreq.2; specifically, the film layer 120 is made of at least one material selected from silicon oxide, silicon nitride, aluminum oxide and titanium dioxide. Since the protruding particles 110 formed by dry etching are relatively regular, the protruding particles 110 are wrapped by the film layer 120 by adopting the prior art such as evaporation, and the wrapped film layer 120 also maintains a relatively regular appearance, in this embodiment, the film layers 120 wrapped with the protruding particles 110 are spaced from each other, so that the first type semiconductor layer 100 can be continuously ensured to have a roughened surface, and the light extraction efficiency of the light emitting diode is improved; meanwhile, the present embodiment defines that the refractive index r of the film layer 120 is 1.ltoreq.r.ltoreq.2.6, and is located between the air and the semiconductor stack, and referring to the reflected light of fig. 4, by adding the film layer 120 with intermediate refractive index, the total reflection angle can be increased, and the problem that the light extraction efficiency is low due to total reflection can be reduced.
In a specific embodiment, referring to fig. 2, 4 and 5, the outer surface of the film layer 120 is a curved surface protruding towards one side of the outer surface of the light emitting diode, which plays a role in condensing light by a convex lens, so that the large-angle light emitted by the light emitting layer can be concentrated and concentrated, and after the total reflection of the large angle is reduced, the large-angle light is concentrated again, so that the axial brightness and intensity of the light emitting direction surface can be obviously enhanced.
In a more preferred embodiment, as shown in fig. 5, an included angle β between the side wall of the film layer 120 and the bottom surface of the film layer 120 is 45 ° to 90 °, which ensures the coating property of the film layer 120 on the protruding particles 110, and at the same time, ensures the light-focusing effect of the film layer 120, and if β < 45 °, the coating property of the film layer 120 on the top edge position (refer to position a shown in fig. 5) of the protruding particles 110 becomes worse; beta > 90 DEG, the condensing effect becomes poor.
Preferably, the distance between the film layers 120 is 1-4 μm, and the distance between the film layers 120 needs to be kept at a certain distance, if the distance is too small, light refracted from one film layer 120 may enter the other film layer 120, and secondary refraction occurs on the surface of the other film layer 120, so that the light-gathering effect of the light-emitting diode cannot be developed, and if the distance is too large, the wrapping property of the film layer 120 on the top edge position of the protruding particles 110 is also reduced (the position a shown in fig. 5). More specifically, the shortest distance d from the outer surface of the protruding particles 110 to the outer surface of the film layer 120 is 0.1-1.5 um.
In the design scheme of the invention, n protruding particles 110 are covered by 1 film layer 120, wherein n is more than or equal to 1 and less than or equal to 3, and the radian effect of the film layer 120 is poor due to the fact that the increase of the number n affects the lens effect of the film layer 120; as shown in fig. 2 and 4, n=1 in the present embodiment.
In this embodiment, it may be preferable to further set a ratio g1 of the height h1 of the first electrode to the height h2 of the film layer 120: g2 =1 to 4:1, referring to the optical path shown in fig. 4, the height of the first electrode is not lower than the height of the film layer 120, and a certain axial convergence effect can be achieved on the optical path through the reflection effect of the side wall of the first electrode.
More specifically, referring to fig. 2, an insulating layer 800 is further included, and the insulating layer 800 covers an upper surface edge portion of the first semiconductor layer 100 and a sidewall of the semiconductor stack.
In addition, on the basis of the conception and the embodiment of the present invention, other structural features of the light emitting diode can be added, or the parts of the corresponding structure can be adaptively adjusted, which will not be described herein.
Example 2
The difference between this embodiment and embodiment 1 is that 2 of the protruding particles 110 are covered with 1 of the film layers 120, as shown in particular with reference to fig. 6, i.e. n=2.
Example 3
The difference between this embodiment and embodiment 1 is that 3 of the protruding particles 110 are covered with 1 of the film layers 120, as shown in particular with reference to fig. 7, i.e. n=3.
Example 4
Referring to fig. 8, the present embodiment is based on embodiment 1 in that a current spreading layer 500 is provided on a side of the second semiconductor layer 300 remote from the light emitting layer 200. Preferably, since the current spreading layer 500 has a problem of light absorption, a through hole is formed through the current spreading layer 500, and the through hole penetrates the current spreading layer 500 to the second semiconductor layer 300, the current direction may be limited and the light absorption of the current spreading layer 500 may be reduced, thereby improving the light emitting brightness of the light emitting diode.
In some embodiments, an omnidirectional reflector structure (ODR) is further included, which includes a transparent dielectric layer 610 and a reflective layer 620, which may be bonded by an adhesive layer;
wherein the reflective layer 620 is on the upper side of the metal bonding layer 710 and closer to the side of the semiconductor epitaxial stack, the reflective layer 620 has a reflectivity of 70% or more, and is formed of a metal or alloy containing at least one of Ag, ni, al, rh, pd, ir, ru, mg, ti, cr, zn, pt, au and Hf. In this embodiment, the reflective layer 620 is preferably Au or Ag. The reflective layer 620 is capable of reflecting light radiated from the semiconductor epitaxial stack toward the substrate 700 side back to the semiconductor epitaxial stack and radiating out from the light-emitting side;
and a transparent dielectric layer 610 located at a side of the current spreading layer 500 away from the light emitting layer 200 and located between the semiconductor epitaxial stack and the reflective layer 620, wherein the transparent dielectric layer 610 covers the surface of the current spreading layer 500 and the through holes on the current spreading layer 500. The transparent dielectric layer 610 is fluoride or oxide or nitride, such as ZnO, siO 2 、SiO x 、SiO x N y 、Si 3 N 4 、Al 2 O 3 、TiO x At least one of MgF or GaF, the combination of which may be, for example, a bragg reflector (DBR) formed by repeated stacking of two materials. The transparent dielectric layer 610 is used to reflect the light radiation of the light emitting layer 200 back to the semiconductor epitaxial stack or to emit light from the side wall, and therefore, the transparent dielectric layer in direct contact with the semiconductor epitaxial stack is preferably a low refractive index material to increase the probability of reflection of the light radiation passing through the semiconductor epitaxial stack to the surface of the transparent dielectric layer 610, and its refractive index is preferably 1.5 or less, such as silicon oxide, and the thickness of the transparent dielectric layer 610 is preferably 100nm or more, for example 100 to 1000nm, more preferably 100 to 900nm, or even more preferably 300 to 900nm. The light transmittance of the light-transmitting dielectric layer 610 is at least 70%, preferably 80% or more, and more preferably 90% or more. Further, referring to fig. 8, a side of the current spreading layer 500 remote from the second semiconductor layer 300 is provided with a second ohmic contact layer 511; the transparent dielectric layer 610 further includes a conductive via 512, and the conductive via 512 is filled with a conductive material, so that the reflective layer 620 and the second ohmic contact layer 511 are electrically connected.
In addition, on the basis of the conception and the embodiment of the present invention, other structural features of the light emitting diode can be added, or the parts of the corresponding structure can be adaptively adjusted, which will not be described herein.
Example 5
On the basis of the inventive concept of embodiment 1, the present invention provides an embodiment of a light emitting device employing the light emitting diode of any of the embodiments and combination schemes as set forth above; the lighting means may be a plant lighting means, stage light or a projector or a display screen.
In addition, it should be understood by those skilled in the art that although many problems exist in the prior art, each embodiment or technical solution of the present invention may be modified in only one or several respects, without having to solve all technical problems listed in the prior art or the background art at the same time. Those skilled in the art will understand that nothing in one claim should be taken as a limitation on that claim.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (15)
1. A light emitting diode, comprising:
a semiconductor stack including a first semiconductor layer, a light emitting layer, and a second semiconductor layer stacked in this order;
the surface of the first semiconductor layer is provided with protruding particles, the outer surface of each protruding particle is coated with a film layer, a plurality of film layers are mutually spaced, and the refractive index r of each film layer is more than or equal to 1 and less than or equal to 2.6.
2. A light emitting diode according to claim 1 wherein: the outer surface of the film layer is a curved surface protruding towards one side of the outer surface of the light-emitting diode.
3. A light emitting diode according to claim 1 or 2, wherein: the included angle beta between the side wall of the film layer and the bottom surface of the film layer is 45-90 degrees.
4. A light emitting diode according to claim 1 wherein: the film layer is prepared from at least one material selected from silicon oxide, silicon nitride, aluminum oxide and titanium dioxide.
5. A light emitting diode according to claim 1 wherein: the distance between the film layers is 1-4 micrometers.
6. A light emitting diode according to claim 1 wherein: the shortest distance d from the outer surface of the protruding particles to the outer surface of the film layer is 0.1-1.5 um.
7. A light emitting diode according to claim 1 wherein: and n protruding particles are covered by 1 film layer, wherein n is more than or equal to 1 and less than or equal to 3, and n is a positive integer.
8. A light emitting diode according to claim 1 wherein: the first semiconductor layer is an N-type semiconductor, and the second semiconductor layer is a P-type semiconductor; or the first semiconductor layer is a P-type semiconductor, and the second semiconductor layer is an N-type semiconductor.
9. A light emitting diode according to claim 1 wherein: the outer surface of one side of the first semiconductor layer far away from the light-emitting layer is electrically connected with a first electrode.
10. A light emitting diode according to claim 9 wherein: height h of the first electrode 1 And the height h of the film layer 2 Ratio h of 1 ：h 2 ＝1～4：1。
11. A light emitting diode according to claim 10 wherein: the first electrode is made of a metal material or an alloy material, wherein the metal material is one of aluminum, copper, gold, nickel, titanium, platinum, chromium and germanium, and the alloy material is a combination of at least two metals of aluminum, copper, gold, nickel, titanium, platinum, chromium and germanium.
12. A light emitting diode according to claim 1 wherein: the side surface of the second semiconductor layer, which is far away from one side of the light-emitting layer, is provided with a current expansion layer.
13. A light emitting diode according to claim 12 wherein: the light emitting device further comprises an omnidirectional reflector structure, wherein the omnidirectional reflector structure is positioned on one side of the current expansion layer away from the light emitting layer.
14. A light emitting diode according to claim 1 wherein: the light-emitting device further comprises a substrate, wherein one side surface of the substrate is bonded to one side, far away from the light-emitting layer, of the second semiconductor layer through a bonding layer; the other side face of the substrate is provided with a second electrode.
15. A light emitting device, characterized in that: use of a light emitting diode according to any one of claims 1-14.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311588545.4A CN117712256A (en) | 2023-11-27 | 2023-11-27 | Light emitting diode and light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311588545.4A CN117712256A (en) | 2023-11-27 | 2023-11-27 | Light emitting diode and light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117712256A true CN117712256A (en) | 2024-03-15 |
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ID=90163113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311588545.4A Pending CN117712256A (en) | 2023-11-27 | 2023-11-27 | Light emitting diode and light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117712256A (en) |
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