CN117352615A - Light emitting diode and light emitting device - Google Patents

Light emitting diode and light emitting device Download PDF

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Publication number
CN117352615A
CN117352615A CN202210741779.7A CN202210741779A CN117352615A CN 117352615 A CN117352615 A CN 117352615A CN 202210741779 A CN202210741779 A CN 202210741779A CN 117352615 A CN117352615 A CN 117352615A
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Prior art keywords
layer
light emitting
sub
emitting diode
layers
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王彦钦
陈劲华
郭桓邵
彭钰仁
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Quanzhou Sanan Semiconductor Technology Co Ltd
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Quanzhou Sanan Semiconductor Technology Co Ltd
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Priority to CN202210741779.7A priority Critical patent/CN117352615A/en
Publication of CN117352615A publication Critical patent/CN117352615A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode, which comprises an epitaxial structure, a first electrode and a second electrode, wherein the epitaxial structure comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer, the light-emitting layer is positioned between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer comprises a first reflecting layer, the second semiconductor layer comprises a second reflecting layer, the first reflecting layer comprises m first sub-layers and n second sub-layers which are alternately stacked, the refractive indexes of the first sub-layers and the second sub-layers are different, the second reflecting layer comprises p third sub-layers and q fourth sub-layers which are alternately stacked, the refractive indexes of the third sub-layers and the fourth sub-layers are different, m, n, p, q are positive integers, the first electrode is electrically connected with the first semiconductor layer, and the second electrode is electrically connected with the second semiconductor layer. Therefore, the light emitting angle of the light emitting diode can be effectively reduced, and the light emitting of the light emitting diode in the normal direction is enhanced.

Description

Light emitting diode and light emitting device
Technical Field
The present invention relates to the field of semiconductor manufacturing technology, and in particular, to a light emitting diode and a light emitting device.
Background
A light emitting diode (Light Emitting Diode, abbreviated as LED) is a semiconductor light emitting element, and is generally made of a semiconductor such as GaN, gaAs, gaP, gaAsP, and the core thereof is a PN junction having light emitting characteristics. LEDs have the advantages of high luminous intensity, high efficiency, small volume, long service life, etc., and are considered to be one of the most potential light sources at present.
Micro LEDs are one of light emitting diodes, and have the characteristics of small chip size, high integration level, self-luminescence and the like. Conventional Micro LEDs are typically coated with a metal mirror, which reflects light emitted from a quantum well (MQW) and concentrates the light. However, there is still a gap between the light emission angle of the conventional Micro LED and that of the OLED. Specifically, the light emitting angle of the OLED is small, so that the brightness in the normal direction can be effectively concentrated and improved; the light emitting angle of the Micro LED is larger, so that the brightness in the normal direction cannot be effectively concentrated, but the Micro LED has the advantage of no color shift (color difference), and the color accuracy is higher than that of the OLED. Therefore, how to reduce the light emitting angle of the Micro LED and to increase the brightness of the Micro LED in the normal direction intensively has become one of the technical difficulties to be solved by those skilled in the art.
Disclosure of Invention
The invention provides a light emitting diode, which comprises an epitaxial structure, a first electrode and a second electrode.
The epitaxial structure includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The light emitting layer is located between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer includes a first reflective layer, and the second semiconductor layer includes a second reflective layer. The first reflective layer includes m first sub-layers and n second sub-layers alternately stacked, and the first sub-layers and the second sub-layers have different refractive indexes. The second reflective layer includes p third sub-layers and q fourth sub-layers alternately stacked, the third sub-layers and the fourth sub-layers having different refractive indices. Wherein m, n, p, q is a positive integer. The first electrode is electrically connected with the first semiconductor layer, and the second electrode is electrically connected with the second semiconductor layer.
In some embodiments, the first sub-layer is Al X1 Ga 1-X1 As layer or Al X3 Ga 1-X3 An InP layer, the second sub-layer is Al X2 Ga 1-X2 As layer or Al X4 Ga 1-X4 An InP layer, the third sub-layer is Al Y1 Ga 1-Y1 As layer or Al Y3 Ga 1-Y3 An InP layer, the fourth sub-layer is Al Y2 Ga 1-Y2 As layer or Al Y4 Ga 1-Y4 InP layers, wherein X1, X2, X3, X4, Y1, Y2, Y3, Y4 are all greater than 0 and less than 1.
In some embodiments, X1, X2, Y1, Y2 are all 0.45 or more and less than 1, and X3, X4, Y3, Y4 are all 0.35 or more and less than 1.
In some embodiments, the first reflective layer is located on a side of the first semiconductor layer remote from the light emitting layer, and the second reflective layer is located on a side of the second semiconductor layer remote from the light emitting layer.
In some embodiments, m, n, p, q is all 6 or more and 20 or less.
In some embodiments, the first reflective layer is in direct contact with the light emitting layer and the second reflective layer is in direct contact with the light emitting layer.
In some embodiments, m, n, p, q is all 1 or more and 12 or less.
In some embodiments, the second semiconductor layer further includes a GaAs ohmic contact layer located above the second reflective layer.
In some embodiments, the GaAs ohmic contact layer has a thickness ranging from 30 to 500 a.
In some embodiments, the sum of the thicknesses of adjacent ones of the first and second sublayers ranges from 800 to 1200 angstroms and the sum of the thicknesses of adjacent ones of the third and fourth sublayers ranges from 800 to 1200 angstroms.
In some embodiments, the light emitting diode further includes an insulating reflective layer covering the first surface of the epitaxial structure, the insulating reflective layer having a first opening through which the first electrode is electrically connected to the first semiconductor layer and a second opening through which the second electrode is electrically connected to the second semiconductor layer.
In some embodiments, the refractive index of the first and third sub-layers ranges from 3.18 to 3.22, and the refractive index of the second and fourth sub-layers ranges from 3.37 to 3.42.
In some embodiments, the thickness H of the first sub-layer 1 ＝λ/4n 1 Thickness H of the second sub-layer 2 ＝λ/4n 2 Thickness H of the third sub-layer 3 ＝λ/4n 3 Thickness H of the fourth sub-layer 4 ＝λ/4n 4 Wherein λ is the emission wavelength of the light-emitting layer, n 1 Is the refractive index of the first sub-layer, n 2 Is the refractive index of the second sub-layer, n 3 Is the refractive index of the third sub-layer, n 4 Is the refractive index of the fourth sub-layer.
In some embodiments, the light emitting diode has a size of 100 microns or less.
An embodiment of the present invention further provides a light emitting device, which uses the light emitting diode according to any one of the above embodiments.
According to the light emitting diode and the light emitting device provided by the embodiment of the invention, the first reflecting layer is arranged in the first semiconductor layer, and the second reflecting layer is arranged in the second semiconductor layer, so that the light emitting angle of the light emitting diode can be effectively reduced, the concentrated light emitting of the light emitting diode is promoted, and the light emitting of the light emitting diode in the normal direction is enhanced.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural view of a light emitting diode according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram of the structure of a first reflective layer;
FIG. 3 is a schematic diagram of the structure of a second reflective layer;
fig. 4 is a schematic structural diagram of a light emitting diode according to a second embodiment of the present invention;
fig. 5 is a schematic structural diagram of a light emitting diode according to a third embodiment of the present invention;
fig. 6 to 8 are schematic structural views of the light emitting diode shown in fig. 5 at various stages in the manufacturing process.
Reference numerals:
1-3-light emitting diodes; 10-epitaxial structure; 101-a first surface; 102-a second surface; 103—a first semiconductor layer; 1031-a first reflective layer; 104-a light emitting layer; 105-a second semiconductor layer; 1051-a second reflective layer; 1052-GaAs ohmic contact layer; 1031 a-a first sub-layer; 1031 b-a second sub-layer; 1051 a-third sub-layer; 1051 b-fourth sublayer; 21-a first electrode; 22-a second electrode; 31-an insulating reflective layer; 311-first openings; 312-a second opening; 32-substrate.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention; the technical features designed in the different embodiments of the invention described below can be combined with each other as long as they do not conflict with each other; all other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that the terms "center," "lateral," "upper," "lower," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present invention and simplify the description, and do not indicate or imply that the devices or components referred to must have a specific orientation or be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more. In addition, the term "comprising" and any variations thereof are meant to be "at least inclusive".
Referring to fig. 1, fig. 2 and fig. 3, fig. 1 is a schematic structural diagram of a light emitting diode 1 according to a first embodiment of the present invention, fig. 2 is a schematic structural diagram of a first reflective layer 1031, and fig. 3 is a schematic structural diagram of a second reflective layer 1051. To achieve at least one of the advantages or other advantages, a first embodiment of the present invention provides a light emitting diode 1. As shown in the figures, the light emitting diode 1 may include an epitaxial structure 10, a first electrode 21, and a second electrode 22.
The epitaxial structure 10 has opposite first and second surfaces 101, 102, in this embodiment, the first and second surfaces 101, 102 may correspond to the upper and lower surfaces of the epitaxial structure 10, respectively. The epitaxial structure 10 includes a first semiconductor layer 103, a light emitting layer 104, and a second semiconductor layer 105. The light emitting layer 104 is located between the first semiconductor layer 103 and the second semiconductor layer 105. That is, the epitaxial structure 10 includes the second semiconductor layer 105, the light emitting layer 104, and the first semiconductor layer 103 in this order from the first surface 101 to the second surface 102.
The first semiconductor layer 103 may be an N-type semiconductor layer, and may supply electrons to the light emitting layer 104 under the power supply. In some embodiments, the first semiconductor layer 103 may be a multi-layered structure, and the first semiconductor layer 103 includes an N-type doped nitride layer. The N-doped nitride layer may include one or more N-type impurities of a group IV element. The N-type impurity may include one of Si, ge, sn, or a combination thereof. In some embodiments, the N-type semiconductor layer may be a doped AlGaInP layer.
The light emitting layer 104 may be a quantum well structure. In some embodiments, the light emitting layer 104 may also be a multiple quantum well structure, where the multiple quantum well structure includes a plurality of quantum well layers and a plurality of quantum barrier layers alternately arranged in a repeating manner, such as a multiple quantum well structure that may be AlGaInP/GaInP, gaN/AlGaN, inAlGaN/InAlGaN, or InGaN/AlGaN. The composition and thickness of the well layer in the light-emitting layer 104 determine the wavelength of the generated light. To increase the light emitting efficiency of the light emitting layer 104, this may be achieved by varying the depth of the quantum wells, the number of layers, thickness, and/or other characteristics of the pairs of quantum wells and quantum barriers in the light emitting layer 104.
The second semiconductor layer 105 may be a P-type semiconductor layer, and may provide holes to the light emitting layer 104 under the power supply. In some embodiments, the second semiconductor layer 105 includes an AlInP layer doped P-type, which may be Mg, C, etc. In some embodiments, the second semiconductor layer 105 includes a P-type doped nitride layer. The P-doped nitride layer may include one or more P-type impurities of a group II element. The P-type impurity may include one of Mg, zn, be, or a combination thereof. The second semiconductor layer 105 may be a multi-layered structure, and the multi-layered structure may have different compositions. In addition, the arrangement of the epitaxial structure 10 is not limited thereto, and other types of epitaxial structures 10 may be selected according to actual requirements.
Further, the first semiconductor layer 103 includes a first reflective layer 1031 therein, and the second semiconductor layer 105 includes a second reflective layer 1051 therein. The first reflective layer 1031 includes m first sub-layers 1031a and n second sub-layers 1031b alternately stacked, and refractive indices of the first sub-layers 1031a and the second sub-layers 1031b are different. The second reflective layer 1051 includes p third sub-layers 1051a and q fourth sub-layers 1051b alternately stacked, and refractive indices of the third sub-layers 1051a and the fourth sub-layers 1051b are different. The m, n, p, q is a positive integer. The refractive index of the first and third sub-layers 1031a and 1051a may range from 3.18 to 3.22, and the refractive index of the second and fourth sub-layers 1031b and 1051b may range from 3.37 to 3.42. The reflecting layers formed by alternately stacking two sub-layers with different refractive indexes are respectively arranged on the upper side and the lower side of the light emitting layer 104, so that a resonant cavity structure is formed, and the light emitting in the normal direction is effectively improved by utilizing the resonant cavity principle. The principle is that the first reflective layer 1031 and the second reflective layer 1051 have different reflectivities for different incident angles, so that light in a specific angle range can be emitted more (for example, light with a wavelength of 625nm is taken as an example, the reflectivities of the light with an incident angle of 0-10 degrees can reach approximately 100%, the reflectivities of the light with an incident angle of 10-30 degrees are more than 80%, and the reflectivities of the light with an incident angle of 30-60 degrees are more than 60%), and due to the resonant cavity effect, the light intensity can be further improved, the light emitting angle of the light emitting diode 1 is finally effectively reduced, the concentrated light emitting of the light emitting diode 1 is improved, and the light emitting of the light emitting diode 1 in the normal direction is enhanced. In addition, the first reflective layer 1031 and the second reflective layer 1051 are directly formed by the epitaxial structure 10 during the growth of the epitaxial structure 10, so as to reduce the plating and etching processes at the chip end and greatly improve the stability of the process.
The first electrode 21 and the second electrode 22 are located on the first surface 101 side of the epitaxial structure 10, and the first electrode 21 and the second electrode 22 are electrically connected to the first semiconductor layer 103 and the second semiconductor layer 105, respectively. In one embodiment, the first electrode 21 is disposed over the first semiconductor layer 103 and the second electrode 22 is disposed over the second semiconductor layer 105. The first electrode 21 may have a multi-layered structure, for example, including a metal such as Cr, ni, au, TI. The second electrode 22 may be made of a transparent conductive material or a metal material, and may be adaptively selected according to the doping condition of the surface layer of the second semiconductor layer 105. In some embodiments, the second contact electrode is made of a transparent conductive material, which may include indium tin oxide, zinc indium oxide, zinc oxide, or the like.
In some casesIn an embodiment, the first sub-layer 1031a may be Al X1 Ga 1-X1 As layer or Al X3 Ga 1-X3 InP layer, second sublayer 1031b may be Al X2 Ga 1-X2 As layer or Al X4 Ga 1-X4 InP layer, third sublayer 1051a may be Al Y1 Ga 1-Y1 As layer or Al Y3 Ga 1-Y3 InP layer, fourth sublayer 1051b may be Al Y2 Ga 1-Y2 As layer or Al Y4 Ga 1-Y4 An InP layer. X1, X2, X3, X4, Y1, Y2, Y3, Y4 in the above are all larger than 0 and smaller than 1. Preferably, in order to avoid that the first reflective layer 1031 and the second reflective layer 1051 absorb visible light, the ratio of the Al component, for example, X1, X2, Y1, Y2 is greater than or equal to 0.45 and less than 1, and X3, X4, Y3, Y4 is greater than or equal to 0.35 and less than 1.
In some embodiments, the sum of thicknesses of adjacent one of the first sub-layer 1031a and one of the second sub-layer 1031b ranges from 800 to 1200 a/m, and the sum of thicknesses of adjacent one of the third sub-layer 1051a and one of the fourth sub-layer 1051b ranges from 800 to 1200 a/m, so as to better emit light at a small angle, effectively reduce the light emission angle of the light emitting diode 1, and enhance the light emission of the light emitting diode 1 in the normal direction.
In some embodiments, the thickness H of the first sub-layer 1031a 1 ＝λ/4n 1 Thickness H of the second sub-layer 1031b 2 ＝λ/4n 2 Thickness H of third sublayer 1051a 3 ＝λ/4n 3 Thickness H of fourth sublayer 1051b 4 ＝λ/4n 4 Where λ is the emission wavelength of the light-emitting layer 104, n 1 Is the refractive index of the first sub-layer 1031a, n 2 Is the refractive index of the second sub-layer 1031b, n 3 Is the refractive index of the third sublayer 1051a, n 4 The refractive index of the fourth sub-layer 1051b is better to make light with a small angle emitted, so that the light emitting angle of the light emitting diode 1 is effectively reduced, and the light emitted by the light emitting diode 1 in the normal direction is enhanced.
In some embodiments, as shown in fig. 1, the first reflective layer 1031 is located on a side of the first semiconductor layer 103 remote from the light emitting layer 104, and the second reflective layer 1051 is located on a side of the second semiconductor layer 105 remote from the light emitting layer 104. At this time, the number of pairs of sub-layers in the first reflective layer 1031 and the second reflective layer 1051 is preferably 6-20, i.e. m, n, p, q is equal to or greater than 6 and equal to or less than 20, so that light with a small angle can be better emitted, the light emitting angle of the light emitting diode 1 is effectively reduced, and the light emitting of the light emitting diode 1 in the normal direction is enhanced. This is because the difference in the positions of the first reflective layer 1031 and the second reflective layer 1051 in the first semiconductor layer 103 and the second semiconductor layer 105 affects the light reflection effect.
The second semiconductor layer 105 in this embodiment may further include a GaAs ohmic contact layer 1052. The GaAs ohmic contact layer 1052 is located on the second reflective layer 1051 to achieve good ohmic contact and promote overall conductivity. Preferably, the GaAs ohmic contact layer 1052 has a thickness ranging from 30 to 500 a.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a light emitting diode 2 according to a second embodiment of the present invention. Compared to the led 1 shown in fig. 1, the led 2 provided in this embodiment is mainly different in that: the first reflective layer 1031 in the first semiconductor layer 103 is in direct contact with the light emitting layer 104, and the second reflective layer 1051 in the second semiconductor layer 105 is in direct contact with the light emitting layer 104. That is, the first reflective layer 1031 and the second reflective layer 1051 are respectively in direct contact with the upper and lower sides of the light emitting layer 104. At this time, the number of pairs of sub-layers in the first reflective layer 1031 and the second reflective layer 1051 is preferably 1-12, i.e. m, n, p, q is equal to or greater than 1 and equal to or less than 12, so as to better emit light with a small angle, effectively reduce the light emitting angle of the light emitting diode 2, and enhance the light emitting of the light emitting diode 2 in the normal direction.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a light emitting diode 3 according to a third embodiment of the present invention. Compared to the led 2 shown in fig. 2, the led 3 provided in this embodiment is mainly different in that: the light emitting diode 3 further comprises an insulating reflective layer 31. The insulating reflective layer 31 covers the first surface 101 of the epitaxial structure 10 and has a first opening 311 and a second opening 312. The first electrode 21 is electrically connected to the first semiconductor layer 103 through the first opening 311, and the second electrode 22 is electrically connected to the second semiconductor layer 105 through the second opening 312. The insulating layer has different functions depending on the location involved, for example: when the insulating layer covers the sidewalls of the epitaxial structure 10, it can be used to prevent the first semiconductor layer 103 and the second semiconductor layer 105 from being electrically connected due to the leakage of the conductive material, so as to reduce the short-circuit abnormality of the light emitting diode 3, but the embodiment of the disclosure is not limited thereto. The material of the insulating layer comprises a non-conductive material. The non-conductive material is preferably an inorganic material or a dielectric material. The inorganic material may comprise silica gel. The dielectric material comprises an electrically insulating material such as aluminum oxide, silicon nitride, silicon oxide, titanium oxide, or magnesium fluoride. For example, the insulating layer may be silicon dioxide, silicon nitride, titanium oxide, tantalum oxide, niobium oxide, barium titanate, or a combination thereof, which may be, for example, a bragg reflector (DBR) formed by repeatedly stacking two materials of different refractive indices.
Next, a method for manufacturing the light emitting diode 3 shown in fig. 5 is disclosed, referring to fig. 6 to 8, and fig. 6 to 8 are schematic structural views of the light emitting diode 3 shown in fig. 5 at various stages in the manufacturing process.
First, referring to fig. 6, an epitaxial structure 10 is grown on a substrate 32, the epitaxial structure 10 including a first semiconductor layer 103, a light emitting layer 104, and a second semiconductor layer 105, the light emitting layer 104 being located between the first semiconductor layer 103 and the second semiconductor layer 105. A portion of the epitaxial structure 10 is removed from the second semiconductor layer 105 and the light emitting layer 104 to expose the first semiconductor layer 103, forming a mesa for subsequent electrode connection. In addition, in the process of preparing the first semiconductor layer 103 and the second semiconductor layer 105, the first reflective layer 1031 and the second reflective layer 1051 are prepared together, that is, the first reflective layer 1031 and the second reflective layer 1051 are directly formed together by using the epitaxial structure 10 when the epitaxial structure 10 grows, so that the plating and etching processes of the chip end are reduced, and the stability of the process is greatly improved. The substrate 32 may be an insulating substrate, and preferably the substrate 32 may be made of a transparent material or a translucent material. In the illustrated embodiment, the substrate 32 is a gallium arsenide substrate.
Next, referring to fig. 7, an insulating reflective layer 31 is prepared on the first surface 101 of the epitaxial structure 10, and the insulating reflective layer 31 is etched to form a first opening 311 and a second opening 312, wherein the first opening 311 is located above the first semiconductor layer 103, and the second opening 312 is located above the second semiconductor layer 105.
Finally, referring to fig. 8, the first electrode 21 and the second electrode 22 are disposed on the first surface 101 side of the epitaxial structure 10 such that the first electrode 21 and the second electrode 22 are electrically connected to the first semiconductor layer 103 and the second semiconductor layer 105, respectively. Specifically, the first electrode 21 is connected to the first semiconductor layer 103 through the first opening 311 of the insulating reflective layer 31, and the second electrode 22 is connected to the second semiconductor layer 105 through the second opening 312 of the insulating reflective layer 31.
The above is merely a method for manufacturing the light emitting diode 3 shown in fig. 5, but the present invention is not limited thereto, and is merely used to illustrate one manufacturing implementation of the light emitting diode 3.
In some embodiments, the size of the light emitting diodes 1, 2, 3 is 100 microns or less, i.e. the size of the light emitting diodes 1, 2, 3 is attributed to Micro light emitting diodes 1 (Micro LEDs).
An embodiment of the present invention further provides a light emitting device, which uses the light emitting diodes 1, 2, 3 according to any of the foregoing embodiments.
In summary, in the light emitting diode 1, 2, 3 and the light emitting device according to the embodiment of the invention, the arrangement of the first reflective layer 1031 in the first semiconductor layer 103 and the second reflective layer 1051 in the second semiconductor layer 105 can effectively reduce the light emitting angle of the light emitting diode 1, 2, 3, promote the concentrated light emission of the light emitting diode 1, 2, 3, and enhance the light emission of the light emitting diode 1, 2, 3 in the normal direction.
In addition, it should be understood by those skilled in the art that although many problems exist in the prior art, each embodiment or technical solution of the present invention may be modified in only one or several respects, without having to solve all technical problems listed in the prior art or the background art at the same time. Those skilled in the art will understand that nothing in one claim should be taken as a limitation on that claim.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.

Claims (15)

1. A light emitting diode, characterized by: the light emitting diode includes:
an epitaxial structure having opposing first and second surfaces, the epitaxial structure comprising a first semiconductor layer, a light emitting layer, and a second semiconductor layer, the light emitting layer being located between the first and second semiconductor layers, the first semiconductor layer comprising a first reflective layer, the second semiconductor layer comprising a second reflective layer;
the first reflecting layer comprises m first sub-layers and n second sub-layers which are alternately stacked, the refractive indexes of the first sub-layers and the second sub-layers are different, the second reflecting layer comprises p third sub-layers and q fourth sub-layers which are alternately stacked, the refractive indexes of the third sub-layers and the fourth sub-layers are different, and m, n, p, q is a positive integer;
a first electrode electrically connected to the first semiconductor layer;
and a second electrode electrically connected to the second semiconductor layer.
2. A light emitting diode according to claim 1 wherein: the first sub-layer is Al X1 Ga 1-X1 As layer or Al X3 Ga 1-X3 An InP layer, the second sub-layer is Al X2 Ga 1-X2 As layer or Al X4 Ga 1-X4 An InP layer, the third sub-layer is Al Y1 Ga 1-Y1 As layer or Al Y3 Ga 1-Y3 An InP layer, the fourth sub-layer is Al Y2 Ga 1-Y2 As layer or Al Y4 Ga 1-Y4 InP layers, wherein X1, X2, X3, X4, Y1, Y2, Y3, Y4 are all greater than 0 and less than 1.
3. A light emitting diode according to claim 2 wherein: x1, X2, Y1 and Y2 are all 0.45 to 1, and X3, X4, Y3 and Y4 are all 0.35 to 1.
4. A light emitting diode according to claim 1 wherein: the first reflecting layer is positioned on one side of the first semiconductor layer far away from the light emitting layer, and the second reflecting layer is positioned on one side of the second semiconductor layer far away from the light emitting layer.
5. A light emitting diode according to claim 4 wherein: m, n, p, q are each 6 or more and 20 or less.
6. A light emitting diode according to claim 1 wherein: the first reflective layer is in direct contact with the light emitting layer and the second reflective layer is in direct contact with the light emitting layer.
7. A light emitting diode according to claim 6 wherein: m, n, p, q are each 1 or more and 12 or less.
8. A light emitting diode according to claim 6 wherein: the second semiconductor layer further comprises a GaAs ohmic contact layer, and the GaAs ohmic contact layer is located on the second reflecting layer.
9. A light emitting diode according to claim 8 wherein: the thickness of the GaAs ohmic contact layer ranges from 30 to 500 angstroms.
10. A light emitting diode according to any one of claims 1-9 wherein: the sum of the thicknesses of adjacent first and second sublayers ranges from 800 to 1200 a/m, and the sum of the thicknesses of adjacent third and fourth sublayers ranges from 800 to 1200 a/m.
11. A light emitting diode according to any one of claims 1-9 wherein: the light emitting diode further comprises an insulating reflecting layer, the insulating reflecting layer covers the first surface of the epitaxial structure, the insulating reflecting layer is provided with a first opening and a second opening, the first electrode is electrically connected with the first semiconductor layer through the first opening, and the second electrode is electrically connected with the second semiconductor layer through the second opening.
12. A light emitting diode according to any one of claims 1-9 wherein: the refractive index of the first sub-layer and the third sub-layer ranges from 3.18 to 3.22, and the refractive index of the second sub-layer and the fourth sub-layer ranges from 3.37 to 3.42.
13. A light emitting diode according to any one of claims 1-9 wherein: thickness H of the first sub-layer 1 ＝λ/4n 1 Thickness H of the second sub-layer 2 ＝λ/4n 2 Thickness H of the third sub-layer 3 ＝λ/4n 3 Thickness H of the fourth sub-layer 4 ＝λ/4n 4 Wherein λ is the emission wavelength of the light-emitting layer, n 1 Is the refractive index of the first sub-layer, n 2 Is the refractive index of the second sub-layer, n 3 Is the refractive index of the third sub-layer, n 4 Is the refractive index of the fourth sub-layer.
14. A light emitting diode according to any one of claims 1-9 wherein: the size of the light emitting diode is less than or equal to 100 micrometers.
15. A light emitting device, characterized in that: use of a light emitting diode according to any one of claims 1-14.
CN202210741779.7A 2022-06-27 2022-06-27 Light emitting diode and light emitting device Pending CN117352615A (en)

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Application Number Priority Date Filing Date Title
CN202210741779.7A CN117352615A (en) 2022-06-27 2022-06-27 Light emitting diode and light emitting device

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CN117352615A true CN117352615A (en) 2024-01-05

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