CN117761806A - Medium-wave infrared antireflection film suitable for wide-angle incidence and preparation method thereof - Google Patents
Medium-wave infrared antireflection film suitable for wide-angle incidence and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000002310 reflectometry Methods 0.000 claims abstract description 12
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000005083 Zinc sulfide Substances 0.000 claims abstract description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 claims abstract description 7
- 229940105963 yttrium fluoride Drugs 0.000 claims abstract description 6
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical group F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 claims abstract description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims abstract description 4
- XASAPYQVQBKMIN-UHFFFAOYSA-K ytterbium(iii) fluoride Chemical compound F[Yb](F)F XASAPYQVQBKMIN-UHFFFAOYSA-K 0.000 claims abstract description 4
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical group [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 44
- 230000008021 deposition Effects 0.000 claims description 41
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 40
- 150000002500 ions Chemical class 0.000 claims description 29
- 238000010884 ion-beam technique Methods 0.000 claims description 27
- 238000004140 cleaning Methods 0.000 claims description 23
- 229910052786 argon Inorganic materials 0.000 claims description 20
- 238000006386 neutralization reaction Methods 0.000 claims description 20
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- 230000008020 evaporation Effects 0.000 claims description 14
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- 238000000034 method Methods 0.000 claims description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 11
- 239000011733 molybdenum Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000028161 membrane depolarization Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N diethyl ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention provides a medium wave infrared antireflection film suitable for wide angle incidence and a preparation method thereof, wherein the antireflection film comprises a substrate, and a medium refractive index layer, a high refractive index layer, a low refractive index layer and a wear-resistant hardening layer which are plated on the substrate in sequence, wherein the substrate is a material with a transparent area covering a medium wave infrared band and a refractive index greater than 3, the material of the medium refractive index layer is zinc sulfide, the material of the high refractive index layer is germanium, the material of the low refractive index layer is yttrium fluoride or ytterbium fluoride, the material of the wear-resistant hardening layer is silicon monoxide or yttrium oxide, and the antireflection film has a reflectivity lower than 0.5% in the range of 0-40 degrees of incidence angle and has friction resistance.
Description
Technical Field
The invention relates to the technical field of optical films, in particular to a medium-wave infrared antireflection film suitable for wide-angle incidence and a preparation method thereof.
Background
The antireflection film can reduce Fresnel reflection on the surface of the substrate, and is a key for improving imaging quality. The anti-reflection film is widely applied to infrared tracking, warning and aiming systems, and in recent years, along with the development of infrared imaging technology, the requirements of people on the infrared anti-reflection film are higher and higher, the infrared anti-reflection film is not limited to lower reflectivity in a certain wave band or a plurality of wave bands, and the mechanical property and the environmental stability of the film become important measurement indexes. However, most of the infrared coating films are made of soft film materials such as sulfides, selenides, fluorides and the like, and the film hardness is low and friction is not resistant, so that the resistance to the damp-heat environment is poor. In addition, since the light rays often have different incident angles when entering the surface of the film layer, the infrared anti-reflection film is generally a multilayer dielectric film, the change of the incident angle tends to cause a polarization effect, so that the optical performance is deteriorated along with the increase of the incident angle, and the depolarization of the anti-reflection film is also a problem to be solved.
Compared with the traditional infrared antireflection film, the nano-structure surface antireflection optical element has higher durability and environmental stability, excellent depolarization property and smaller influence of an incident angle and polarization, but the micro-nano structure is often required to be subjected to processes such as pattern transfer, etching and the like, and has higher requirements on equipment and process, longer manufacturing period and higher price. In addition, nanostructured surface optical elements are very careful during assembly, and once the surface is stained with fingerprints, cleaning is cumbersome, and non-woven fabrics or absorbent cotton cannot be used as anti-reflective films, which limit their large-scale use in infrared optical systems. Therefore, the infrared antireflection film with the characteristics of wide incidence angle and high quality still has very wide application prospect.
Disclosure of Invention
In order to solve the problems in the background technology, the invention provides a medium wave infrared antireflection film suitable for wide-angle incidence and a preparation method thereof.
The technical scheme for solving the technical problems is as follows:
in a first aspect, the invention provides a medium wave infrared antireflection film suitable for wide-angle incidence, which comprises a substrate, and a medium refractive index layer, a high refractive index layer, a low refractive index layer and a wear-resistant hardening layer which are plated on the substrate in sequence; the substrate is made of a material with a medium wave infrared band covered by a transparent area and a refractive index greater than 3, the material of the medium refractive index layer is zinc sulfide, the material of the high refractive index layer is germanium, the material of the low refractive index layer is yttrium fluoride or ytterbium fluoride, and the material of the wear-resistant hardening layer is silicon monoxide or yttrium oxide.
According to the scheme, the thickness of the intermediate refractive index layer is 150-250 nm, the thickness of the high refractive index layer is 50-120 nm, the thickness of the low refractive index layer is 500-800 nm, and the thickness of the wear-resistant hardening layer is 100-300 nm.
According to the scheme, the substrate is made of silicon or germanium.
According to the scheme, the working wave band of the medium wave infrared antireflection film suitable for wide-angle incidence is 3.7-4.8 mu m.
According to the scheme, the medium wave infrared antireflection film suitable for wide-angle incidence has reflectivity lower than 0.5% in the range of 0-40 degrees of incidence angle.
The working wave band of the intermediate wave infrared antireflection film suitable for wide angle incidence is 3.7-4.8 mu m, the intermediate wave infrared antireflection film has reflectivity lower than 0.5% in the range of 0-40 DEG incidence, excellent optical performance and good depolarization effect, the wear-resistant hardening layer with low refractive index is used as the outermost layer of the film system, the wear-resistant hardening layer can be deposited to be more than 100nm without affecting optical indexes, the scratch phenomenon of the film layer in the cleaning process is reduced, the soft film material in the film layer is well protected, and the environment adaptability is strong.
In a second aspect, the present invention provides a method for preparing the mid-wave infrared antireflection film suitable for wide-angle incidence, including the following steps:
s1, preprocessing a substrate;
s2, sequentially depositing a middle refractive index layer, a high refractive index layer, a low refractive index layer and a wear-resistant hardening layer on the substrate by adopting an ion beam auxiliary deposition process;
s3, taking a part: and after the deposition is finished, the ion source is closed, the baking is stopped, the high vacuum state is maintained, and when the temperature in the chamber is reduced to below 80 ℃, the workpiece is taken out through deflation.
According to the scheme, the step S1 comprises the steps of substrate cleaning and ion beam etching cleaning to form the surface to be coated in an active state.
According to the scheme, the substrate cleaning method comprises the following steps: the substrate is roughly wiped by using the polishing solution to form a fresh surface to be coated, and then the surface of the substrate is cleaned for a plurality of times by using the alcohol-diethyl ether mixed solution until visual inspection under an incandescent lamp confirms that the surface is free of pollutants.
According to the scheme, the specific method of ion beam etching cleaning in the step S1 is that the surface to be coated of the substrate is placed in a coating machine downwards, the chamber is pumped to a high vacuum state, the substrate is baked at a high temperature and kept at a constant temperature, and then an ion source is started to carry out ion beam etching cleaning on the substrate until the surface to be coated in an active state is formed.
According to the above scheme, the vacuum state in step S1 is 1.0X10 -3 Pa, baking temperature 150-200 deg.C, heat preservation time 60-120 min, anode voltage 130-170V, anode current 3-5A, neutralization current 16-20A, argon flow 8-12 sccm, and cleaning time 10-20 min.
According to the scheme, in the step S2, the intermediate refractive index layer is deposited by adopting electron beam evaporation or molybdenum boat evaporation, and an ion beam is used as an auxiliary deposition means, wherein the deposition rate is 0.6-1.2 nm/S, the ion source parameter is anode voltage 90V-130V, the anode current is 1.5A-3.5A, the neutralization current is 16A-20A, and the argon flow is 8 sccm-12 sccm; the high refractive index layer adopts electron beam evaporation deposition, and uses ion beam as auxiliary deposition means, the deposition rate is 0.15-0.5 nm/s, the ion source parameter is anode voltage 100V-150V, anode current is 2A-4A, neutralization current is 16A-20A, and argon flow is 8 sccm-12 sccm; the low refractive index layer is deposited by electron beam evaporation or molybdenum boat evaporation, and an ion beam is used as an auxiliary deposition means, wherein the deposition rate is 0.15-0.4 nm/s, the ion source parameter is anode voltage 120-150V, anode current is 2.5-5A, neutralization current is 16-20A, and argon flow is 8-12 sccm; the wear-resistant hardening layer is deposited by electron beam evaporation or molybdenum boat evaporation, and an ion beam is used as an auxiliary deposition means, wherein the deposition rate is 0.2-1.0 nm/s, the ion source parameter is 140-170V of anode voltage, the anode current is 3.5-5.5A, the neutralization current is 16-20A, and the argon flow is 9-13 sccm.
The invention uses ion beam auxiliary deposition process, and can improve the kinetic energy of atoms and molecules during evaporation by adjusting ion source parameters, thereby remarkably improving the film adhesion and improving the aggregation density of the film. Under the action of an ion source, the hardness of the wear-resistant hardening layer can reach more than 7.5GPa, and the aggregation density is close to that of a bulk material, so that an efficient protective layer is formed. The anti-reflection film has strong environmental adaptability, is not easy to scratch a film layer during cleaning and wiping, has simple structure and preparation process, and can be widely applied to the manufacturing fields of infrared lenses and window optical elements.
Drawings
FIG. 1 is a schematic diagram of a medium wave infrared antireflection film structure suitable for wide angle incidence;
FIG. 2 is a graph showing the reflectivity of an antireflection film of the present invention at different angles of incidence;
FIG. 3 is a nanoindentation test result of the abrasion resistant hardbanding of the present invention.
In the figure: 1. the substrate, 2, intermediate refractive index layer, 3, high refractive index layer, 4, low refractive index layer, 5, wear-resisting hardening layer.
Detailed Description
The principles and features of the present invention are described below with reference to the drawings and specific embodiments, the examples being provided for illustration only and not for the purpose of limiting the invention.
In order to provide an infrared antireflection film with wide incidence angle and high surface quality characteristics, the inventor designs a film made of four layers of dielectric thinThe structure of the intermediate wave infrared antireflection film which is formed by the film and is suitable for wide-angle incidence is shown in figure 1, and the antireflection film comprises a substrate 1, and an intermediate refractive index layer 2, a high refractive index layer 3, a low refractive index layer 4 and a wear-resistant hardening layer 5 which are plated on the substrate 1 in sequence; the substrate 1 is made of a material with a transparent area covering a medium wave infrared band and a refractive index greater than 3, the material of the medium refractive index layer 2 is zinc sulfide (ZnS), the material of the high refractive index layer 3 is germanium (Ge), and the material of the low refractive index layer 4 is Yttrium Fluoride (YF) 3 ) Or ytterbium fluoride (YbF) 3 ) The material of the wear-resistant hardening layer 5 is silicon oxide (SiO) or yttrium oxide (Y) 2 O 3 )。
In some preferred embodiments, the intermediate refractive index layer 2 has a thickness of 150nm to 250nm, the high refractive index layer 3 has a thickness of 50nm to 120nm, the low refractive index layer 4 has a thickness of 500nm to 800nm, and the abrasion resistant stiffening layer 5 has a thickness of 100nm to 300nm.
In some preferred embodiments, the material of the substrate 1 is silicon or germanium.
The antireflection film has an operating band of 3.7 to 4.8 μm and a reflectance of less than 0.5% in the range of 0 to 40 DEG incident angle.
The medium wave infrared antireflection film suitable for wide angle incidence is prepared by adopting an ion beam assisted deposition process, and the specific preparation method comprises the following steps:
s1, preprocessing a substrate 1, including cleaning the substrate 1 and etching and cleaning by an ion beam, wherein the specific method for cleaning the substrate 1 comprises the following steps: firstly, roughly wiping a substrate 1 by using a polishing solution to form a fresh surface to be coated, and then cleaning the surface of the substrate 1 for a plurality of times by using an alcohol-ether mixed solution until visual inspection under an incandescent lamp confirms that the surface is free of pollutants, wherein the specific method for ion beam etching cleaning comprises the following steps: placing the substrate 1 to be coated face down in a coating machine, pumping the chamber to a high vacuum state, baking the substrate 1 at a high temperature and keeping the temperature constant, and then starting an ion source to etch and clean the substrate 1 by ion beams until an active state to be coated face is formed;
s2, adjusting parameters of an ion source and an evaporation source, and sequentially depositing a middle refractive index layer 2, a high refractive index layer 3, a low refractive index layer 4 and a wear-resistant hardening layer 5 on a substrate 1 by adopting an ion beam auxiliary deposition process;
s3, taking a part: and after the deposition is finished, the ion source is closed, the baking is stopped, the high vacuum state is maintained, and when the temperature in the chamber is reduced to below 80 ℃, the workpiece is taken out through deflation.
Preferably, the vacuum state in step S1 is 1.0X10 -3 Pa, baking temperature 150-200 deg.C, heat preservation time 60-120 min, anode voltage 130-170V, anode current 3-5A, neutralization current 16-20A, argon flow 8-12 sccm, and cleaning time 10-20 min.
Preferably, in the step S2, the intermediate refractive index layer 2 is deposited by electron beam evaporation or molybdenum boat evaporation, and an ion beam is used as an auxiliary deposition means, wherein the deposition rate is 0.6-1.2 nm/S, the ion source parameter is anode voltage 90V-130V, the anode current is 1.5A-3.5A, the neutralization current is 16A-20A, and the argon flow is 8 sccm-12 sccm; the high refractive index layer 3 is deposited by electron beam evaporation, and an ion beam is used as an auxiliary deposition means, wherein the deposition rate is 0.15-0.5 nm/s, the ion source parameter is 100-150V of anode voltage, the anode current is 2-4A, the neutralization current is 16-20A, and the argon flow is 8-12 sccm; the low refractive index layer 4 is deposited by electron beam evaporation or molybdenum boat evaporation, and an ion beam is used as an auxiliary deposition means, wherein the deposition rate is 0.15-0.4 nm/s, the ion source parameter is anode voltage 120-150V, anode current is 2.5-5A, neutralization current is 16-20A, and argon flow is 8-12 sccm; the wear-resistant hardening layer 5 is deposited by electron beam evaporation or molybdenum boat evaporation, and an ion beam is used as an auxiliary deposition means, wherein the deposition rate is 0.2-1.0 nm/s, the ion source parameter is 140-170V of anode voltage, the anode current is 3.5-5.5A, the neutralization current is 16-20A, and the argon flow is 9-13 sccm.
In a specific embodiment, the film system structure of the prepared intermediate wave infrared antireflection film suitable for wide-angle incidence is as follows: sub|aM/bH/cL/dP/Air.
Wherein Sub is a monocrystalline germanium substrate, M represents ZnS, H represents Ge, L represents YF3, and P represents SiO. The thickness of each film layer is as follows: a=178 nm, b=80 nm, c=647 nm, d=100 nm.
The preparation process adopts a vacuum coating machine of the Laibao ARES1110, the coating machine is provided with a Mark II ion source, a film thickness monitoring system, an electron beam evaporation system and a resistance evaporation system, and the size of the substrate is phi 25mm 1mm.
The preparation process is specifically implemented as follows:
1) Cleaning the substrate 1: al is firstly used 2 O 3 Wiping the substrate 1 with the polishing solution for 3 minutes to form a fresh surface to be coated, and then dipping the substrate surface with the absorbent cotton in the alcohol-diethyl ether mixed solution with the volume ratio of 1:1 for a plurality of times until visual inspection under an incandescent lamp confirms that the surface is free of pollutants;
2) Ion beam etching and cleaning: placing the substrate in a coater with the surface to be coated facing downwards, and vacuumizing the chamber to 1.0X10 -3 Pa, starting a heater to bake the substrate 1 to 170 ℃ and keeping the temperature for 60 minutes, then starting an ion source to etch and clean the substrate 1 by ion beams, wherein the parameter of the ion source is that the anode voltage is 170V, the anode current is 5A, the neutralization current is 20A, the argon flow is 10sccm, and the etching and cleaning time is 12 minutes;
3) Film deposition:
intermediate refractive index layer (ZnS layer) 2 deposition: the molybdenum boat is adopted for evaporation, the deposition rate is set to be 1.0nm/s, the deposition thickness is 178nm, the ion source parameter is anode voltage 90V, the anode current is 2A, the neutralization current is 18A, and the argon flow is 9sccm.
The high refractive index layer (Ge layer) 3 was deposited by electron beam evaporation at a deposition rate of 0.2nm/s and a deposition thickness of 80nm, with an ion source parameter of 100V anode voltage, 2.5A anode current, 18A neutralization current, and 9sccm argon flow.
Low refractive index layer (YF) 3 Layer) 4 was deposited by electron beam evaporation at a deposition rate of 0.3nm/s, a deposition thickness of 647nm, an ion source parameter of 150V at an anode voltage, 3.5A at an anode current, 19A at a neutralization current, and an argon flow of 10sccm.
The wear-resistant hardening layer (SiO layer) 5 is deposited by adopting a molybdenum boat evaporation, the deposition rate is 1.0nm/s, the deposition thickness is 100nm, the ion source parameter is anode voltage 160V, the anode current is 4.5A, the neutralization current is 20A, and the argon flow is 10sccm;
4) Picking up a part: and after the deposition is finished, the ion source is closed, the baking is stopped, the high vacuum state is maintained, and when the temperature in the chamber is reduced to below 80 ℃, the workpiece is taken out through deflation.
The prepared intermediate wave infrared antireflection film suitable for wide angle incidence is tested under different incidence angles to obtain the reflectivity, the wave band of the working wave band is 3.7-4.8 mu m, the result is shown in figure 2, the reflectivity R=0.17% when the incidence angle is 6 degrees, the reflectivity R=0.19% when the incidence angle is 20 degrees, the reflectivity R=0.40% when the incidence angle is 40 degrees, the reflectivity is less than 0.5%, namely the reflectivity is lower than 0.5% in the range of 0-40 degrees, the optical performance is excellent, and the depolarization effect is good.
The nanoindentation test was performed on the abrasion-resistant hardened layer (SiO layer) 5, and the result is shown in fig. 3, in which the abscissa indicates the contact depth of the probe and the ordinate indicates the hardness. In order to reduce test errors, 8 different points are measured by adopting the same load and an average value is obtained, and the result shows that the hardness of the SiO film layer is 7.56GPa, the hardness of the plated SiO film layer is far greater than that of a common infrared coating material, and the mechanical property of the film layer is improved to a certain extent.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (10)
1. The medium wave infrared antireflection film suitable for wide-angle incidence is characterized by comprising a substrate (1), and a medium refractive index layer (2), a high refractive index layer (3), a low refractive index layer (4) and a wear-resistant hardening layer (5) which are sequentially plated on the substrate (1);
the substrate (1) is made of a material with a transparent area covering a medium wave infrared band and a refractive index greater than 3, the material of the medium refractive index layer (2) is zinc sulfide, the material of the high refractive index layer (3) is germanium, the material of the low refractive index layer (4) is yttrium fluoride or ytterbium fluoride, and the material of the wear-resistant hardening layer (5) is silicon monoxide or yttrium oxide.
2. The mid-wave infrared antireflection film suitable for wide angle incidence according to claim 1, wherein the thickness of the intermediate refractive index layer (2) is 150nm to 250nm, the thickness of the high refractive index layer (3) is 50nm to 120nm, the thickness of the low refractive index layer (4) is 500nm to 800nm, and the thickness of the abrasion-resistant stiffening layer (5) is 100nm to 300nm.
3. Medium wave infrared anti-reflection film suitable for wide angle incidence according to claim 1 or 2, characterized in that the material of the substrate (1) is silicon or germanium.
4. A mid-wave infrared anti-reflection film adapted for wide angle incidence as defined in claim 3, wherein the operating band is 3.7-4.8 μm.
5. The mid-wave infrared anti-reflection film suitable for wide angle incidence according to claim 1 or 2, having a reflectivity of less than 0.5% in the range of 0-40 ° incidence angle.
6. The method for preparing the medium wave infrared antireflection film applicable to wide angle incidence according to any one of claims 1 to 5, which is characterized by comprising the following steps:
s1, preprocessing a substrate (1);
s2, sequentially depositing a middle refractive index layer (2), a high refractive index layer (3), a low refractive index layer (4) and a wear-resistant hardening layer (5) on a substrate by adopting an ion beam auxiliary deposition process;
s3, taking a part: and after the deposition is finished, the ion source is closed, the baking is stopped, the high vacuum state is maintained, and when the temperature in the chamber is reduced to below 80 ℃, the workpiece is taken out through deflation.
7. The method for preparing the medium-wave infrared antireflection film applicable to wide-angle incidence according to claim 6, wherein the step S1 comprises the steps of cleaning a substrate (1) and etching and cleaning by an ion beam to form a surface to be coated in an active state.
8. The method for preparing the intermediate wave infrared antireflection film suitable for wide-angle incidence according to claim 7, wherein the specific method for ion beam etching cleaning in the step S1 is that the surface to be coated of the substrate (1) is placed in a coating machine downwards, the chamber is pumped to a high vacuum state, the substrate (1) is baked at a high temperature and kept at a constant temperature, and then an ion source is started to perform ion beam etching cleaning on the substrate until the surface to be coated in an active state is formed.
9. The method for producing a mid-wave infrared antireflection film suitable for wide-angle incidence according to claim 8, wherein the vacuum state in step S1 is 1.0×10 -3 Pa, baking temperature 150-200 deg.C, heat preservation time 60-120 min, anode voltage 130-170V, anode current 3-5A, neutralization current 16-20A, argon flow 8-12 sccm, and cleaning time 10-20 min.
10. The method for preparing a medium wave infrared antireflection film suitable for wide angle incidence according to claim 6, wherein in the step S2, an electron beam evaporation or molybdenum boat evaporation deposition is adopted for the medium refractive index layer (2), an ion beam is used as an auxiliary deposition means, the deposition rate is 0.6-1.2 nm/S, the ion source parameter is anode voltage 90-130V, anode current is 1.5-3.5A, neutralization current is 16-20A, and argon flow is 8-12 sccm;
the high refractive index layer (3) adopts electron beam evaporation deposition, and adopts ion beams as auxiliary deposition means, wherein the deposition rate is 0.15-0.5 nm/s, the ion source parameter is anode voltage 100-150V, anode current is 2-4A, neutralization current is 16-20A, and argon flow is 8-12 sccm;
the low refractive index layer (4) is deposited by electron beam evaporation or molybdenum boat evaporation, and an ion beam is used as an auxiliary deposition means, wherein the deposition rate is 0.15-0.4 nm/s, the ion source parameter is anode voltage 120-150V, the anode current is 2.5-5A, the neutralization current is 16-20A, and the argon flow is 8-12 sccm;
the wear-resistant hardening layer (5) is deposited by electron beam evaporation or molybdenum boat evaporation, and an ion beam is used as an auxiliary deposition means, wherein the deposition rate is 0.2-1.0 nm/s, the ion source parameter is anode voltage 140-170V, the anode current is 3.5-5.5A, the neutralization current is 16-20A, and the argon flow is 9-13 sccm.
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