CN115368031B - Preparation method of chalcogenide glass 8-12um wave band high-durability antireflection film - Google Patents
Preparation method of chalcogenide glass 8-12um wave band high-durability antireflection film Download PDFInfo
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- CN115368031B CN115368031B CN202211135545.4A CN202211135545A CN115368031B CN 115368031 B CN115368031 B CN 115368031B CN 202211135545 A CN202211135545 A CN 202211135545A CN 115368031 B CN115368031 B CN 115368031B
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- 239000005387 chalcogenide glass Substances 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000004140 cleaning Methods 0.000 claims abstract description 24
- 230000008020 evaporation Effects 0.000 claims abstract description 23
- 238000001704 evaporation Methods 0.000 claims abstract description 23
- 238000007747 plating Methods 0.000 claims abstract description 20
- 239000007888 film coating Substances 0.000 claims abstract description 13
- 238000009501 film coating Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 238000006386 neutralization reaction Methods 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 16
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 229910017768 LaF 3 Inorganic materials 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 238000000869 ion-assisted deposition Methods 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 abstract description 9
- 230000003287 optical effect Effects 0.000 description 3
- IQAKAOAPBMJSGJ-UHFFFAOYSA-N [Cu].[Y].[Ba] Chemical compound [Cu].[Y].[Ba] IQAKAOAPBMJSGJ-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000003666 anti-fingerprint Effects 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/73—Anti-reflective coatings with specific characteristics
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/31—Pre-treatment
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- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
The application discloses a preparation method of a chalcogenide glass 8-12um wave band high-durability antireflection film, which comprises the following steps: step one, starting a Hall ion source to carry out ion cleaning on a lens, and setting ion cleaning parameters; step two, starting to plate the first to fifth layers after ion cleaning is finished, and setting ion source parameters in the plating process; and thirdly, setting the evaporation modes, the Hall ion source parameters and the evaporation temperature of various materials in the film coating process, and taking out the lens after the film coating is finished. The method can prepare the antireflection film with the infrared long wave band (8-12 um) and the moderate friction resistance, and can ensure high transmittance (more than or equal to 96%).
Description
Technical Field
The application relates to the field of infrared coating, in particular to a preparation method of a chalcogenide glass 8-12um wave band high-durability antireflection film.
Background
With the increasing demands of modern high-precision optical instruments on optical lenses, for example, the requirements on wear resistance, corrosion resistance, high light transmittance and the like of the lenses are raised. The traditional infrared antireflection film has higher transmittance (the average transmittance of 8-12um is more than 96%) but the wear resistance and corrosion resistance are quite unsatisfactory, and particularly, the traditional antireflection film cannot completely resist moderate friction in wear resistance, so that the traditional antireflection film can only be used in a specific photoelectric system and cannot be used as an exposed lens. Therefore, DLC film is usually selected for the infrared long-wave optical lens to resist severe environment, but DLC film severely reduces the transmittance of the lens, and the transmittance is about 90% in 8-12 um. It is not acceptable for some high precision instruments to sacrifice transmission by more than 5%.
Disclosure of Invention
In view of the problems existing in the prior art, the purpose of the present disclosure is to provide a preparation method of a chalcogenide glass 8-12um band high-durability antireflection film.
In order to achieve the above object, the present disclosure provides a method for preparing a chalcogenide glass 8-12um band high durability antireflection film, comprising the steps of: step one, starting a Hall ion source to carry out ion cleaning on a lens, and setting ion cleaning parameters; step two, starting to plate the first to fifth layers after ion cleaning is finished, and setting ion source parameters in the plating process; and thirdly, setting the evaporation modes, the Hall ion source parameters and the evaporation temperature of various materials in the film coating process, and taking out the lens after the film coating is finished.
In some embodiments, the antireflection film system structure is:
substrate/YBF 3 /ZNS/GE/ZNS/YBF 3 /ZNS/LAF 3 /AF/AIR。
In some embodiments, in step one, a vacuum of less than 1.5X10 is applied prior to coating -3 Pa, heat to 150 ℃.
In some embodiments, in step one, the parameters of the Hall ion source during ion cleaning of the lens are a neutralization current of 0.2-1A, a neutralization gas flow of 5-10sccm, an anode voltage of 180-280V, an anode current of 1-5A, and an argon flow of 100%.
In some embodiments, ion-assisted deposition is used for 1-6 layers of the antireflective coating system, where 1-5 layers are heated to 150℃and 6 th layer of LAF is applied 3 The temperature is 160-200deg.C, the plating of layer 8 AF is not heated, the temperature is reduced to below 100deg.C, and no ion source is used.
In some embodiments, in the third step, the hall ion source parameter is set as follows: the neutralization current is 0.3-0.5A, the neutralization gas flow is 5-8sccm, the anode voltage is 150-200V, the anode current is 0.5-3A, and the argon flow is 100%.
In some embodiments, the substrate is a chalcogenide glass.
In some embodiments, theThe thickness of each layer of the antireflection film system is as follows: substrate/YBF 3 (136nm)/ZNS(221nm)/GE(70nm)/ZNS(300nm)/YBF 3 (1150nm)/ZNS(80nm)/LAF 3 (150nm)/AF(15nm)/AIR。
The beneficial effects of the present disclosure are as follows:
the method can prepare the antireflection film with the infrared long wave band (8-12 um) and the moderate friction resistance, and can ensure high transmittance (more than or equal to 96%).
Drawings
FIG. 1 (a) is a graph showing traces of the intermediate friction in example 1; (b) Is a surface trace graph of a conventional antireflection film after moderate friction.
FIG. 2 is a spectrum of the high durability antireflection film of example 1.
Detailed Description
The method for preparing the chalcogenide glass 8-12um band high-durability antireflection film is described in detail below.
The application discloses a preparation method of a chalcogenide glass 8-12um wave band high-durability antireflection film, which comprises the following steps: step one, starting a Hall ion source to carry out ion cleaning on a lens, and setting ion cleaning parameters; step two, starting to plate the first to fifth layers after ion cleaning is finished, and setting ion source parameters in the plating process; and thirdly, setting the evaporation modes, the Hall ion source parameters and the evaporation temperature of various materials in the film coating process, and taking out the lens after the film coating is finished.
The scheme of the present disclosure is: placing the ultrasonic cleaned chalcogenide glass lens into a fixture, placing the fixture into an evaporation coating machine, and coating a film outwards from a first layer of the lens according to a set film system, wherein the film system has the structure that; substrate/YBF 3 /ZNS/GE/ZNS/YBF 3 /ZNS/LaF 3 A total of 8 films of AF/AIR, the film system being an antireflection film system as a whole, in which LaF 3 For hardening, AF refers to an Anti-fingerprint material special for Anti-fingerprint, which can effectively reduce the surface energy of the film. After the completion, a coating process is started, the coating of each layer of film is completed according to the process requirement of coating, and the film layer has the capability of resisting moderate friction and higher transmittance after the completion.
In some embodiments, the antireflection film system structure is:
substrate/YBF 3 /ZNS/GE/ZNS/YBF 3 /ZNS/LAF 3 /AF/AIR。
In some embodiments, in step one, a vacuum of less than 1.5X10 is applied prior to coating -3 Pa, heat to 150 ℃.
In some embodiments, in step one, the parameters of the Hall ion source during ion cleaning of the lens are a neutralization current of 0.2-1A, a neutralization gas flow of 5-10sccm, an anode voltage of 180-280V, an anode current of 1-5A, and an argon flow of 100%. The Hall ion source is used for cleaning the microstructure on the surface of the lens, so that the surface oxide layer can be eliminated, and the surface is cleaner.
In some embodiments, ion-assisted deposition is used for 1-6 layers of the antireflective coating system, where 1-5 layers are heated to 150℃and 6 th layer of LAF is applied 3 The temperature is 160-200deg.C, the plating of layer 8 AF is not heated, the temperature is reduced to below 100deg.C, and no ion source is used. Layer 6 LAF 3 It is required to harden at high temperature, and finally AF heating plating is easy to decompose, so that it is not heated, preferably at 100 ℃ or lower.
In some embodiments, in the third step, the hall ion source parameter is set as follows: the neutralization current is 0.3-0.5A, the neutralization gas flow is 5-8sccm, the anode voltage is 150-200V, the anode current is 0.5-3A, and the argon flow is 100%. During film coating, the Hall ion source parameter assists in film coating, so that the film layer is more compact.
In some embodiments, the substrate is a chalcogenide glass.
In some embodiments, the thickness of each layer of the anti-reflection film is: substrate/YBF 3 (136nm)/ZNS(221nm)/GE(70nm)/ZNS(300nm)/YBF 3 (1150nm)/ZNS(80nm)/LAF 3 (150 nm)/AF (15 nm)/AIR. This thickness can achieve an anti-reflection effect.
In some embodiments, in step three, the evaporation mode is resistance heating evaporation and electron beam heating evaporation.
[ test ]
Example 1
Step one, placing an ultrasonic cleaned lens into a fixture and placing the fixture into a vacuum coating machine,vacuum heating the equipment, and vacuum heating to 150 deg.C for 1.5X10 -3 Starting a Hall ion source to carry out ion cleaning on the lens in Pa, wherein the ion cleaning parameters are as follows; the neutralization current is 0.5A, the neutralization gas flow is 8sccm, the anode voltage is 220V, the anode current is 3A, the argon flow ratio is 100%, and the cleaning time is 300 seconds;
step two, starting to plate the first to fifth layers after ion cleaning is finished, wherein ion source parameters in the plating process are as follows; the neutralization current is 0.3A, the neutralization gas flow is 7sccm, the anode voltage is 180V, the anode current is 2A, the argon flow ratio is 100%, and the evaporation rate of various materials in the plating process is as follows; YBF (Yttrium barium copper free) 3 (7A/S)ZNS(7A/S)GE(4A/S)LAF 3 (6A/S) AF off-rate;
step three, the evaporation modes of various materials in the film coating process are as follows; ZNS, LAF 3 For resistance heating evaporation, GE, YBF 3 AF is electron beam heating evaporation, and heating to 170deg.C after plating fifth layer, and plating LAF 3 The aging film layer is required to be maintained at the temperature of 170 ℃ for 10 minutes, and finally, AF is plated when the temperature is reduced to below 100 ℃, the lens can be taken out after AF plating is completed, and moderate friction can be resisted after the lens is taken out. The spectrum diagram of the high-durability antireflection film and the average transmittance of 8-12um are shown in figure 1.
Example 2
Step one, placing the lens cleaned by ultrasonic into a fixture, placing the fixture into a vacuum coating machine, vacuumizing and heating the equipment, and vacuum-heating the equipment to 1.5 multiplied by 10 when the temperature is 150 DEG C -3 Starting a Hall ion source to carry out ion cleaning on the lens in Pa, wherein the ion cleaning parameters are as follows; the neutralization current is 0.5A, the neutralization gas flow is 8sccm, the anode voltage is 240V, the anode current is 4A, the argon flow proportion is 100%, and the cleaning time is 200 seconds;
step two, starting to plate the first to fifth layers after ion cleaning is finished, wherein ion source parameters in the plating process are as follows; the neutralization current is 0.3A, the neutralization gas flow is 6sccm, the anode voltage is 200V, the anode current is 2.2A, the argon flow ratio is 100%, and the evaporation rate of various materials in the plating process is as follows; YBF (Yttrium barium copper free) 3 (5A/S)ZNS(6A/S)GE(3A/S)LAF 3 (7A/S) AF off-rate;
step three, the evaporation modes of various materials in the film coating process are as follows; ZNS, LAF 3 AF is resistance heating evaporation, GE and YBF 3 The electron beam is heated for evaporation. Heating to 180deg.C after plating fifth layer to plate LAF 3 And maintaining the aging film layer at the temperature of 180 ℃ for 5 minutes, finally, starting to plate AF when the temperature is reduced to below 100 ℃, taking out the lens after AF plating is finished, and resisting moderate friction after taking out the lens.
The above detailed description of the present application is provided to enable those skilled in the art to understand the present application and to practice it, and is not intended to limit the scope of the present application, but includes all equivalent changes and modifications according to the spirit of the present application.
Claims (6)
1. A preparation method of a chalcogenide glass 8-12um wave band high-durability antireflection film comprises the following steps:
step one, starting a Hall ion source to carry out ion cleaning on a lens, and setting ion cleaning parameters;
step two, starting to plate the first to fifth layers after ion cleaning is finished, and setting ion source parameters in the plating process;
setting evaporation modes, hall ion source parameters and evaporation temperatures of various materials in the film coating process, and taking out the lens after film coating is completed;
the antireflection film system structure is as follows:
substrate/YbF 3 /ZnS/Ge/ZnS/YbF 3 /ZnS/LaF 3 /AF/Air；
Ion-assisted deposition is used for 1-6 layers in the process of plating the antireflection film system, wherein the heating temperature for plating 1-5 layers is 150 ℃ and plating 6 th layer of LAF 3 The temperature is 160-200deg.C, the plating of layer 8 AF is not heated, the temperature is reduced to below 100deg.C, and no ion source is used.
2. The method for preparing the chalcogenide glass 8-12um band high-durability antireflection film according to claim 1, characterized in that,
in the first step, vacuum is set to be less than 1.5X10 before coating -3 Pa, heating to 150 ℃.
3. The method for preparing the chalcogenide glass 8-12um band high-durability antireflection film according to claim 1, characterized in that,
in the first step, the parameters of the Hall ion source during the ion cleaning of the lens are that the neutralization current is 0.2-1A, the neutralization gas flow is 5-10sccm, the anode voltage is 180-280V, the anode current is 1-5A, and the argon flow is 100%.
4. The method for preparing the chalcogenide glass 8-12um band high-durability antireflection film according to claim 1, characterized in that,
in the third step, the parameters of the Hall ion source during film coating are set as follows: the neutralization current is 0.3-0.5A, the neutralization gas flow is 5-8sccm, the anode voltage is 150-200V, the anode current is 0.5-3A, and the argon flow is 100%.
5. The method for preparing the chalcogenide glass 8-12um band high-durability antireflection film according to claim 1, characterized in that,
the thickness of each layer of the antireflection film system is as follows: substrate/YbF 3 (136nm)/ZnS(221nm)/Ge(70nm)/ZnS(300nm)/YbF 3 (1150nm)/ZnS(80nm)/LaF 3 (150nm)/AF(15nm)/Air。
6. The method for preparing the chalcogenide glass 8-12um band high-durability antireflection film according to claim 1, characterized in that,
in the third step, the evaporation mode is resistance heating evaporation and electron beam heating evaporation.
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| CN116240498A (en) * | 2023-03-10 | 2023-06-09 | 安徽光智科技有限公司 | Preparation method of 1064nm infrared antireflection film system of zinc selenide substrate |
| CN116282962A (en) * | 2023-04-04 | 2023-06-23 | 安徽光智科技有限公司 | Preparation method of antireflection coating system plated on chalcogenide glass substrate |
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Denomination of invention: Preparation method of high durability anti reflective film for sulfur based glass in the 8-12um wavelength range Granted publication date: 20231107 Pledgee: Huishang Bank Co.,Ltd. Chuzhou Fenghuang road sub branch Pledgor: Anhui Guangzhi Technology Co.,Ltd. Registration number: Y2024980011102 |
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