CN115421226A - Chalcogenide glass optical element and preparation method thereof - Google Patents
Chalcogenide glass optical element and preparation method thereof Download PDFInfo
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- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
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- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
Abstract
The invention relates to a chalcogenide glass optical element, which keeps the stress of an anti-reflection film layer basically consistent by forming symmetrical anti-reflection film layers on two sides of a substrate, improves the surface shape quality of the substrate, in addition, the invention takes ZnSe material as a transition layer, because the components of ZnSe and the chalcogenide glass substrate are relatively close and the microstructure is similar, the bonding force of ZnSe and chalcogenide glass is better, the bonding strength of the substrate and the anti-reflection film layer can be obviously improved, in addition, znS, znSe and YbF 3 The stress states of the films are opposite and mutually offset, so that the overall stress state of the antireflection film layer is close to zero, the film layer is firmer, and the problem of film release is solved. The chalcogenide glass optical element of the present invention has an average transmittance of more than 95% in both the 1.06 μm and 8-12 μm wavelength ranges. The invention also relates to a preparation method of the chalcogenide glass optical element. The invention achieves the purpose of controlling the surface shape change of the lens by optimizing the process parameters such as the structural design of the film system, the selection of the transition layer, the baking temperature and the like, and improves the firmness and the transmittance of the film layer.
Description
Technical Field
The invention relates to the technical field of optical films, in particular to a chalcogenide glass optical element and a preparation method thereof.
Background
In recent years, infrared optical elements have been developed rapidly, and the preparation process of traditional infrared materials such as Ge, znS, znSe and the like has been mature. However, the above materials are complicated and expensive to produce, and therefore, alternative materials are sought to reduce the cost.
Chalcogenide glass is multispectral infrared glass and has the following main advantages: 1) The glass has higher glass transition temperature, better mechanical property and wide transmission range, and covers 1.064 mu m laser wave band and three important atmospheric windows of 1-3 mu m, 3-5 mu m and 8-12 mu m; 2) The preparation and processing are easier than the growth of single crystal, and the method is not limited by size and can even be directly molded; 3) In the design of the infrared optical system, the chalcogenide glass is very suitable for being used as a positive lens, has excellent matching property with other infrared optical materials, can reduce the number of elements and improve the imaging performance of the optical system. Therefore, chalcogenide glasses are considered as important candidate materials for application in thermal imaging systems instead of conventional infrared materials. However, the existing chalcogenide glass optical element has the problems of ultra-poor surface shape, demoulding and the like, so that the optical element cannot meet the actual use requirement, and even fails in the use process.
Therefore, it is necessary to develop a chalcogenide glass optical element and a method for producing the same to solve the problems of poor surface shape, film release, and the like.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a chalcogenide glass optical element, which keeps the stress of an anti-reflection film layer basically consistent by forming symmetrical anti-reflection film layers on two sides of a substrate, improves the surface shape quality of the substrate, and in addition, the invention takes ZnSe material as a transition layer, because the ZnSe and the chalcogenide glass substrate have closer components and similar microstructures, the bonding force of the ZnSe and the chalcogenide glass is better, the bonding strength of the substrate and the anti-reflection film layers can be obviously improved, and in addition, znS, znSe and YbF 3 The stress states of the films are opposite and mutually offset, so that the overall stress state of the antireflection film layer is close to zero, the film layer is firmer, and the problem of film release is solved.
In order to achieve the above object, the present invention provides the following technical solutions.
A chalcogenide glass optical element comprising:
a substrate, the substrate being chalcogenide glass; and
two antireflection films, set up respectively in the upper surface of basement and lower surface, two antireflection films all include: a first layer of film, a second layer of film, a third layer of film, a fourth layer of film, a fifth layer of film, a sixth layer of film, a seventh layer of film and an eighth layer of film which are arranged layer by layer from the surface of the substrate, wherein the first layer of film is a layer of filmIs a ZnSe film, the second layer film, the fourth layer film, the sixth layer film and the eighth layer film are ZnS films, and the third layer film, the fifth layer film and the seventh layer film are YbF 3 And (3) a membrane.
In some embodiments, the film structure of the upper and lower surfaces of the substrate may be: sub/x 1 H1/x 2 H2/x 3 L/x 4 H2/x 5 L/x 6 H2/x 7 L/x 8 H2/Air, wherein Sub represents the substrate, air represents Air, H1 represents the ZnSe film of 1/4 wavelength optical thickness, H2 represents the ZnS film of 1/4 wavelength optical thickness, and L represents the YbF of 1/4 wavelength optical thickness 3 Film, x 1 ～x 9 The optical thickness coefficient of each layer is represented by the following values: x is the number of 1 ＝0.521，x 2 ＝0.703，x 3 ＝0.613，x 4 ＝0.055，x 5 ＝0.018，x 6 ＝0.093，x 7 ＝0.085，x 8 =0.009. By optimizing the thickness of each film, the surface shape change can be further controlled, and the firmness of the film is improved.
The invention also provides a preparation method of the chalcogenide glass optical element, which comprises the following steps:
putting a substrate into a closed film-making environment, and vacuumizing the film-making environment; and
sequentially plating first to eighth layer films on one surface of the substrate by an electron beam evaporation method; and after the plating is finished, sequentially plating first to eighth layer films on the other surface of the substrate by adopting the same process to obtain the chalcogenide glass optical element.
In some embodiments, the substrate is cleaned prior to placing the substrate in the closed film-forming environment. The cleaning may include: soaking and cleaning the surface of the substrate by absolute ethyl alcohol, cleaning by an ultrasonic cleaning machine, and then wiping by an alcohol-ether mixture.
In some embodiments, the cleaning comprises: firstly, putting the substrate into alcohol to be soaked for 10-20min, and lightly wiping the surface of the substrate by using filament cotton; then, putting the substrate into an ultrasonic cleaning machine, firstly ultrasonically cleaning the substrate for 10min by using deionized water, and then ultrasonically cleaning the substrate for 10min by using alcohol; after ultrasonic cleaning is finished, the substrate is washed by alcohol, and then the substrate is wiped for 3 to 5 times by using the mixed solution of alcohol and ether which is mixed according to a certain proportion and dipped by the filament cotton. After cleaning, the surface of the substrate can be inspected by a strong flashlight, and if the surface has no stain, dust or scratch, the substrate can be put into the closed film-making environment for use.
In some embodiments, the film-making environment is a vacuum chamber of a film coater.
In some embodiments, the method of making further comprises: cleaning dust in the vacuum chamber; znSe, znS and YbF 3 Respectively loading the film materials into an oxygen-free copper crucible of the vacuum chamber, and placing the film materials into a crucible base plate; putting the cleaned substrate into a coating lantern ring, and putting the substrate and the coating lantern ring together on a planetary workpiece carrier of the vacuum chamber; and loading a new crystal oscillation piece.
In some embodiments, after the crystal oscillator plate is loaded, the vacuum system can be started, and when the vacuum degree reaches 8 x 10 -2 When Pa is below, the workpiece holder is rotated. The rotational speed can be set to 20-30 revolutions per minute.
In some embodiments, after placing the substrate in a closed film-making environment and before coating, the substrate may be baked to increase the temperature of the substrate. In some embodiments, the baking may be performed after rotating the workpiece holder. In some embodiments, the baking temperature is 100 ℃ to 150 ℃ and the baking time is 3 to 4 hours. The baking time may be counted from the start of heating. By baking the substrate and optimizing the baking temperature and time, the surface shape change can be further controlled, and the firmness of the film layer is improved. Through baking the substrate at a proper temperature, particles deposited on the surface of the substrate can obtain certain capacity, so that the particles can migrate on the surface of the substrate, and the film formation is ensured to be more uniform and have better smoothness; in addition, the film is baked at a proper temperature, so that partial stress of the substrate can be released, and the firmness of the film coating is ensured.
In some embodiments, after baking, the substrate may be pre-bombarded with an ion source to remove contaminants from the surface of the substrate. Through the pre-bombardment, the cleanliness of the surface of the substrate can be improved, and the firmness of the film layer is improved.
In some embodiments, the ion source used in the pre-bombardment may be a kaufman ion source, the ion source screen pressure may be 340-360V, the ion beam current may be 55-65mA, and the bombardment time may be 5-10 min. By optimizing the ion source parameters and bombardment time, the cleanliness of the substrate surface can be further improved.
In some embodiments, the plating of the first through eighth layer of film each comprises: at 4X 10 -3 Plating is carried out by adopting an electron beam evaporation method under the vacuum degree below Pa, and the deposition rate can be 0.3-0.5nm/s. The ion beam assisted evaporation coating process has the advantage of mature process, and the deposition rate and the thickness of the film layer can be accurately controlled by a quartz crystal controller.
In some embodiments, baking is performed during the plating process, which may be at a temperature of 90 ℃ to 150 ℃, while turning on the ion source for bombardment.
In some embodiments, after the coating is finished, the baking switch is closed, and the obtained chalcogenide glass optical element is cooled along with the furnace; and opening the vacuum chamber when the temperature of the vacuum chamber is not higher than 60 ℃, and taking out the chalcogenide glass optical element.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention provides a chalcogenide glass optical element, which keeps the stress of an anti-reflection film layer basically consistent by forming symmetrical anti-reflection film layers on two sides of a substrate, improves the surface shape quality of the substrate, and in addition, the invention takes ZnSe material as a transition layer, because the components of ZnSe and the chalcogenide glass substrate are relatively close and the microstructure is similar, the bonding force of ZnSe and chalcogenide glass is better, the bonding strength of the substrate and the anti-reflection film layers can be obviously improved, and in addition, znS, znSe and YbF 3 The stress states of the films are opposite and mutually offset, so that the overall stress state of the antireflection film layer is close to zero, the film layer is firmer, and the problem of film release is solved.
After the invention plates the anti-reflection film on the two sides of the chalcogenide glass substrate, the average transmittance in the wave band ranges of 1.06 μm and 8-12 μm exceeds 95 percent.
2. According to the invention, through the optimization of technological parameters such as film system structure design, transition layer selection, baking temperature and the like, the purpose of controlling the surface shape change of the lens is achieved, the firmness and transmittance of the film layer are improved, and thus the qualification rate and the repeatability of chalcogenide glass lens products are ensured.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 shows a schematic structural view of a chalcogenide glass optical element of the present invention.
Fig. 2 shows a transmittance profile of a chalcogenide glass substrate.
FIG. 3 is a graph showing the transmittance of a chalcogenide glass optical element according to example 1 of the present invention.
Description of reference numerals:
100 is a substrate, 200 is an anti-reflection film, 201 is a first layer film, 202 is a second layer film, 203 is a third layer film, 204 is a fourth layer film, 205 is a fifth layer film, 206 is a sixth layer film, 207 is a seventh layer film, and 208 is an eighth layer film.
Detailed Description
In order to make the objects, contents, and advantages of the present invention clearer, the following detailed description of the embodiments of the present invention will be made in conjunction with the accompanying drawings and examples. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein.
As shown in FIG. 1, the chalcogenide glass optical element of the present invention comprises:
a substrate 100, the substrate 100 being chalcogenide glass; and
two antireflection films 200 respectively disposed on the upper and lower surfaces of the substrate 100Each of the antireflection films 200 includes: a first layer of film 201, a second layer of film 202, a third layer of film 203, a fourth layer of film 204, a fifth layer of film 205, a sixth layer of film 206, a seventh layer of film 207 and an eighth layer of film 208 which are arranged layer by layer from the surface of the substrate 100, wherein the first layer of film 201 is a ZnSe film, the second layer of film 202, the fourth layer of film 204, the sixth layer of film 206 and the eighth layer of film 208 are ZnS films, and the third layer of film 203, the fifth layer of film 205 and the seventh layer of film 207 are YbF films 3 And (3) a membrane.
The invention also provides a preparation method of the chalcogenide glass optical element, which comprises the following steps:
putting a substrate into a closed film-making environment, and vacuumizing the film-making environment; and
sequentially plating first to eighth layer films on one surface of the substrate by an electron beam evaporation method; and after the plating is finished, sequentially plating first to eighth layer films on the other surface of the substrate by adopting the same process to obtain the chalcogenide glass optical element.
The preparation method realizes the preparation of the 1.06 mu m and 8-12 mu m dual-waveband composite anti-reflection film on the chalcogenide glass substrate by means of transition layer selection, film system design, process optimization and the like. And the antireflection film is plated in a double-sided film plating mode, and the film systems on the two sides have the same structure.
In some embodiments, the thin film design and preparation method comprises the following steps:
1. optimizing the design of a membrane system: the substrate material is selected from chalcogenide glass, the high-refractive-index coating material is zinc sulfide (ZnS) and zinc selenide (ZnSe), and the low-refractive-index coating material is YbF 3 The antireflection film is plated in a double-sided film plating mode, and the film system structures on the two sides are as follows:
Sub/x 1 H1/x 2 H2/x 3 L/x 4 H2/x 5 L/x 6 H2/x 7 L/x 8 H2/Air, wherein Sub represents the substrate, air represents Air, H1 represents the ZnSe film of 1/4 wavelength optical thickness, H2 represents the ZnS film of 1/4 wavelength optical thickness, and L represents the YbF of 1/4 wavelength optical thickness 3 Film, x 1 ～x 9 Respectively representing the optical thickness coefficient of each layer of film;
2. cleaning a chalcogenide glass substrate: soaking and cleaning the surface of the chalcogenide glass substrate to be coated with the film by using absolute ethyl alcohol, cleaning by using an ultrasonic cleaning machine, and then wiping by using an alcohol-ether mixture;
3. charging: loading the chalcogenide glass substrate into a workpiece frame, loading a crystal oscillator plate, and adding appropriate amount of ZnS, znSe and YbF 3 Coating materials;
4. baking the substrate: vacuumizing equipment; before coating, the chalcogenide glass substrate is baked and heated, the temperature of the chalcogenide glass substrate is increased, the baking temperature is 100-150 ℃, and the baking time is 3-4 hours;
5. pre-bombarding a chalcogenide glass substrate: after baking and before starting coating, pre-bombarding the coated substrate for 5-10 min by a Koffman ion source;
6. plating an antireflection film: according to the film system structure and the film layer plating technological parameters, the film layers are sequentially plated on the front surface and the back surface of the chalcogenide glass substrate. The evaporation sequence of each layer of film material is ZnSe/ZnS/YbF 3 /ZnS/YbF 3 /ZnS/YbF 3 and/ZnS. The coating process of each film layer is as follows:
coating a ZnSe film layer: the vacuum degree is pumped to 4 x 10 -3 Below Pa, plating by adopting an electron beam evaporation method, and controlling the film deposition rate and the film thickness by a quartz crystal oscillator film thickness instrument;
and (3) ZnS film coating: the vacuum degree is pumped to 4X 10 -3 Below Pa, plating by adopting an electron beam evaporation method, wherein the deposition rate of the film layer is 0.4nm/s, and the deposition rate and the thickness of the film layer are controlled by a quartz crystal oscillator film thickness instrument;
YbF 3 coating a film layer: pumping the vacuum degree to be better than 4 multiplied by 10 -3 And (4) below Pa, plating by adopting an electron beam evaporation method, wherein the deposition rate of the film layer is 0.4nm/s, and the deposition rate and the thickness of the film layer are controlled by a quartz crystal oscillator film thickness instrument.
The technical solution of the present invention will be explained in further detail by means of specific embodiments.
Example 1 preparation method of chalcogenide glass optical element X1
The method comprises the following steps:
s1, selecting chalcogenide glass As40Se60 (the mark GG 6) As a substrate, wherein the film system is designed As follows: sub/0.521H1/0.703H2/0.613L/0.055H2/0.018L/0.093H2/0.085L/0.009H2/Air, wherein H1 represents ZnSe with 1/4 wavelength optical thickness, H2 represents ZnS with 1/4 wavelength optical thickness, and L represents YbF with 1/4 wavelength optical thickness 3 Sub is the substrate and Air is the Air.
S2, firstly putting the chalcogenide glass substrate into analytical pure alcohol to be soaked for 10min, and lightly wiping the surface of the chalcogenide glass substrate by filament cotton. Then putting the chalcogenide glass substrate into an ultrasonic cleaning machine, firstly ultrasonically cleaning the chalcogenide glass substrate for 10min by using deionized water, and then ultrasonically cleaning the chalcogenide glass substrate for 10min by using alcohol; after ultrasonic cleaning is finished, the substrate is washed clean by alcohol, then the substrate is wiped for 3 to 5 times by using a mixed solution of alcohol and ether which is dipped in the ratio of 3 to 1 by using a filament cotton, the surface of the substrate is inspected by using a highlight flashlight, and the substrate can be used after no stain, dust or scratch is detected.
S3, cleaning dust in the vacuum chamber, and adding ZnSe, znS and YbF 3 Respectively loading the film materials into an oxygen-free copper crucible and putting the crucible into a crucible chassis; loading the cleaned chalcogenide glass substrate into a coating lantern ring, and then putting the substrate and the coating lantern ring together on a planetary workpiece rack of a vacuum chamber; and loading a new crystal oscillation piece.
S4, starting a vacuum system, and when the vacuum degree reaches 8 multiplied by 10 -2 When Pa is needed, the workpiece frame is started to rotate, and the set rotating speed is 20 revolutions per minute; and opening a baking switch of the vacuum chamber, heating the temperature of the chalcogenide glass substrate to 120 ℃, and baking for 4 hours from the start of heating.
S5, before formal coating begins, an ion source is started to carry out pre-bombardment on the chalcogenide glass substrate for 10min, the ion source screen pressure is set to be 350V, and the ion beam current is adjusted to be 60mA.
S6, evaporating a ZnSe film by adopting an electron beam evaporation method, wherein the deposition rate of the film layer is 0.4nm/s; plating a ZnS film by adopting an electron beam evaporation method, wherein the film layer deposition rate is 0.4nm/s; ybF plating by electron beam evaporation method 3 The film deposition rate is 0.4nm/s. The deposition rate and thickness of the film are controlled by a quartz crystal controller. Baking at 120 deg.C during coating process, and starting ion source for bombardment.
After the film coating is finished, closing a baking switch, and cooling the film coating sheet along with the furnace; and when the temperature of the vacuum chamber is not higher than 60 ℃, opening the vacuum chamber, and taking out the plated film to obtain the chalcogenide glass optical element.
The performance of the prepared dual-waveband chalcogenide glass optical element is tested, and the test result is as follows.
1. The transmittance of the chalcogenide glass optical element at 1.06 μm was 96.9%, and the average transmittance in the wavelength range of 8 to 12 μm was 96.4%, as shown in FIG. 3. The transmittance of the chalcogenide glass optical element of the present invention at 1.06 μm and in the 8-12 μm band is significantly higher than that of the chalcogenide glass substrate (as shown in fig. 2).
2. The severe environment resistance performance: the chalcogenide glass optical element is tested as follows, and the test result shows that the film layer has no obvious phenomena of cracking, demoulding and the like, and the optical performance of the film layer is kept unchanged.
(1) High and low temperature tests, the temperature is kept for 2 hours at minus 50 ℃ and 65 ℃ respectively, wherein the humidity at 65 ℃ is 95 percent, and the cycle is 24 cycles.
(2) Water solubility test, soaking in pure water for 24 hours.
(3) Salt solubility test, soaking in 4.5% saline water for 24 hours.
(4) Adhesion test, using 3M Scotch tape, the film was adhered to the surface and then pulled down vertically with force.
Example 2 preparation of chalcogenide glass optical element X2
The method comprises the following steps:
s1, chalcogenide glass (Ge 22As20Se 58) (the mark GG 4) is selected As a substrate, and a film system is designed As follows: sub/0.521H1/0.703H2/0.613L/0.055H2/0.018L/0.093H2/0.085L/0.009H2/Air, wherein H1 represents ZnSe with 1/4 wavelength optical thickness, H2 represents ZnS with 1/4 wavelength optical thickness, L represents YbF3 with 1/4 wavelength optical thickness, sub is a substrate, and Air is Air.
S2, firstly, putting the chalcogenide glass substrate into analytical pure alcohol to be soaked for 20min, and lightly wiping the surface of the chalcogenide glass substrate by filament cotton. Then putting the chalcogenide glass substrate into an ultrasonic cleaning machine, firstly ultrasonically cleaning the chalcogenide glass substrate for 10min by using deionized water, and then ultrasonically cleaning the chalcogenide glass substrate for 10min by using alcohol; after ultrasonic cleaning is finished, the substrate is washed clean by alcohol, then the substrate is wiped for 3 to 5 times by using a mixed solution of alcohol and ether which is dipped in the ratio of 3 to 1 by using a filament cotton, and the surface of the substrate is inspected by using a strong flashlight and can be used after no stain, dust or scratch exists.
S3, cleaning dust in the vacuum chamber, and adding ZnSe, znS and YbF 3 Respectively loading the film materials into an oxygen-free copper crucible, and putting the crucible into a crucible base plate; loading the cleaned chalcogenide glass substrate into a coating lantern ring, and then putting the chalcogenide glass substrate and the coating lantern ring together on a planetary workpiece rack of a vacuum chamber; and loading a new crystal oscillation piece.
S4, starting a vacuum system, and when the vacuum degree reaches 8 multiplied by 10 -2 When Pa is needed, the workpiece frame is started to rotate, and the set rotating speed is 20 revolutions per minute; and opening a vacuum chamber baking switch, heating the chalcogenide glass substrate to 120 ℃, and baking for 4 hours from the start of heating.
S5, before formal coating begins, an ion source is started to carry out pre-bombardment on the chalcogenide glass substrate for 10min, the ion source screen pressure is set to be 350V, and the ion beam current is adjusted to be 60mA.
S6, evaporating a ZnSe film by adopting an electron beam evaporation method, wherein the deposition rate of the film layer is 0.4nm/s; plating a ZnS film by adopting an electron beam evaporation method, wherein the film layer deposition rate is 0.4nm/s; ybF plating by electron beam evaporation method 3 The film deposition rate is 0.4nm/s. The deposition rate and the thickness of the film layer are controlled by a quartz crystal controller. Baking at 120 deg.C during coating process, and starting ion source for bombardment.
After the film coating is finished, closing the baking switch, and cooling the film coating sheet along with the furnace; and opening the vacuum chamber when the temperature of the vacuum chamber is not higher than 60 ℃, and taking out the plated film to obtain the chalcogenide glass optical element.
The performance of the obtained dual-band chalcogenide glass optical element was tested, and the test results are as follows.
1. The chalcogenide glass optical element had a laser transmittance at 1.06 μm of 95.1% and an average transmittance in a wavelength range of 8 to 12 μm of 95.4%.
2. The severe environment resistance performance: the chalcogenide glass optical element is tested as follows, and the test result shows that the film layer has no obvious phenomena of cracking, demoulding and the like, and the optical performance of the film layer is kept unchanged.
(1) High and low temperature tests, keeping at-50 ℃ and 65 ℃ for 2h respectively, wherein the humidity at 65 ℃ is 95%, and circulating for 24 periods.
(2) Water solubility test, soaking in pure water for 24 hours.
(3) Salt solubility test, soaking in 4.5% saline for 24 hours.
(4) Adhesion test, using 3M Scotch tape, adhered to the surface of the film layer and then pulled down vertically with force.
While the invention has been described with reference to specific preferred embodiments, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A chalcogenide glass optical element comprising:
a substrate, the substrate being chalcogenide glass; and
two antireflection films, set up respectively in the upper surface of basement and lower surface, two antireflection films all include: the first layer film, the second layer film, the third layer film, the fourth layer film, the fifth layer film, the sixth layer film, the seventh layer film and the eighth layer film are arranged on the surface of the substrate layer by layer, wherein the first layer film is a ZnSe film, the second layer film, the fourth layer film, the sixth layer film and the eighth layer film are ZnS films, and the third layer film, the fifth layer film and the seventh layer film are YbF films 3 And (3) a membrane.
2. The chalcogenide glass optical element according to claim 1, wherein the film system structures of the upper and lower surfaces of the substrate are all: sub/x 1 H1/x 2 H2/x 3 L/x 4 H2/x 5 L/x 6 H2/x 7 L/x 8 H2/Air，
Wherein, the first and the second end of the pipe are connected with each other,
sub represents the number of said substrates,
air represents the Air in the form of Air,
h1 represents the optical thickness of the ZnSe film at 1/4 wavelength,
h2 represents the optical thickness of the ZnS film of 1/4 wavelength,
l represents the YbF of 1/4 wavelength optical thickness 3 The film is a film of a polymeric material,
x 1 ～x 9 the optical thickness coefficient of each layer is represented by the following values: x is the number of 1 ＝0.521，x 2 ＝0.703，x 3 ＝0.613，x 4 ＝0.055，x 5 ＝0.018，x 6 ＝0.093，x 7 ＝0.085，x 8 ＝0.009。
3. The method for producing a chalcogenide glass optical element according to claim 1 or 2, comprising the steps of:
putting a substrate into a closed film-making environment, and vacuumizing the film-making environment; and
sequentially plating first to eighth layer films on one surface of the substrate by an electron beam evaporation method; and after the plating is finished, sequentially plating first to eighth layer films on the other surface of the substrate by adopting the same process to obtain the chalcogenide glass optical element.
4. The production method according to claim 3, wherein the substrate is baked to increase the temperature of the substrate after being placed in the closed film-forming environment and before being coated.
5. The method according to claim 4, wherein the baking temperature is 100 to 150 ℃ and the baking time is 3 to 4 hours.
6. The method according to claim 4 or 5, wherein after baking, the substrate is pre-bombarded with an ion source to remove contaminants from the surface of the substrate.
7. The preparation method of claim 6, wherein the ion source is a kaufman ion source, the ion source screen pressure is 340-360V, the ion beam current is 55-65mA, and the bombardment time is 5-10 min.
8. The production method according to claim 3 or 4, wherein the plating of the first to eighth films each comprises: at 4X 10 -3 Plating by electron beam evaporation under the vacuum degree below Pa, wherein the deposition rate is 0.3-0.5nm/s.
9. The method according to claim 3 or 4, wherein the plating process is carried out by baking at a temperature of 90 ℃ to 150 ℃ while turning on an ion source for bombardment.
10. The production method according to claim 3 or 4, wherein the substrate is cleaned before being put into the closed film-forming environment; the cleaning comprises the following steps: soaking and cleaning the surface of the substrate by absolute ethyl alcohol, cleaning by an ultrasonic cleaning machine, and wiping by using an alcohol-ether mixture.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116540332A (en) * | 2023-04-26 | 2023-08-04 | 云南驰宏国际锗业有限公司 | AR/DLC composite coated infrared chalcogenide glass lens and preparation method thereof |
| CN116639886A (en) * | 2023-05-11 | 2023-08-25 | 有研国晶辉新材料有限公司 | Chalcogenide glass optical element and preparation method thereof |
-
2022
- 2022-08-05 CN CN202210939825.4A patent/CN115421226A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116540332A (en) * | 2023-04-26 | 2023-08-04 | 云南驰宏国际锗业有限公司 | AR/DLC composite coated infrared chalcogenide glass lens and preparation method thereof |
| CN116639886A (en) * | 2023-05-11 | 2023-08-25 | 有研国晶辉新材料有限公司 | Chalcogenide glass optical element and preparation method thereof |
| CN116639886B (en) * | 2023-05-11 | 2023-12-26 | 有研国晶辉新材料有限公司 | Chalcogenide glass optical element and preparation method thereof |
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Inventor after: Lu Shujuan Inventor after: Xu Ning Inventor after: Li Huanhuan Inventor after: Zhang Yunbo Inventor after: Gong Xiaomin Inventor after: Jia Meng Inventor after: Cao Bo Inventor after: Liu Shuai Inventor after: Zhang Xiaoren Inventor before: Lu Shujuan |