CN117753710A - Cleaning method of double-layer gas sprayer - Google Patents
Cleaning method of double-layer gas sprayer Download PDFInfo
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- CN117753710A CN117753710A CN202311728773.7A CN202311728773A CN117753710A CN 117753710 A CN117753710 A CN 117753710A CN 202311728773 A CN202311728773 A CN 202311728773A CN 117753710 A CN117753710 A CN 117753710A
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- water
- sprayer
- cleaning
- component
- pure water
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Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004140 cleaning Methods 0.000 title claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 60
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 34
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000007789 gas Substances 0.000 claims abstract description 26
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 20
- 235000011089 carbon dioxide Nutrition 0.000 claims abstract description 20
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 17
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 17
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 17
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000001035 drying Methods 0.000 claims abstract description 16
- 238000005406 washing Methods 0.000 claims abstract description 12
- 238000005488 sandblasting Methods 0.000 claims abstract description 11
- 238000002791 soaking Methods 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 11
- 239000007788 liquid Substances 0.000 claims abstract description 8
- 239000011259 mixed solution Substances 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims abstract description 8
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 8
- 238000010926 purge Methods 0.000 claims abstract description 7
- 239000006227 byproduct Substances 0.000 claims abstract description 4
- 238000000227 grinding Methods 0.000 claims abstract description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 27
- 238000005422 blasting Methods 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000004744 fabric Substances 0.000 claims description 6
- 238000011010 flushing procedure Methods 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 5
- 230000002411 adverse Effects 0.000 claims description 4
- 239000013049 sediment Substances 0.000 claims description 4
- 230000002159 abnormal effect Effects 0.000 claims description 3
- 239000003082 abrasive agent Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000011109 contamination Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000009991 scouring Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 239000002352 surface water Substances 0.000 claims description 3
- 208000034656 Contusions Diseases 0.000 claims description 2
- 230000007547 defect Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 8
- 230000008021 deposition Effects 0.000 abstract description 8
- 239000003344 environmental pollutant Substances 0.000 abstract description 8
- 231100000719 pollutant Toxicity 0.000 abstract description 8
- 239000000047 product Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 208000034526 bruise Diseases 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
Abstract
The invention relates to a cleaning method of a double-layer gas sprayer, which comprises the following specific steps: checking incoming goods; IPA wiping; immersing the sprayer component in a mixed solution of ammonia water, hydrogen peroxide and water for more than 30 minutes; washing with pure water for the first time; the tool is connected with the air inlet, the other end of the tool is connected with the chemical liquid tank, and the mixed solution of nitric acid, hydrofluoric acid and water is filled into the sprayer through compressed air, so that the chemical liquid uniformly flows out through the small holes for 20-30S; washing with pure water for the second time; soaking in pure water; surface grinding; washing with high pressure water; performing sand blasting cleaning on the surface of the component by using a dry ice sand blasting machine to remove byproducts adhered to the surface; ultrasonic cleaning; nitrogen purging; and (5) drying. The invention can completely remove the particle pollutants and the deposition pollutants on the surface of the sprayer component and in the holes of the sprayer component, avoid the loss of the product, ensure the uniformity of the holes, prolong the single use time of the component and increase the use times of the sprayer component.
Description
Technical Field
The invention relates to the technical field of cleaning of precise spare parts of semiconductor equipment, in particular to a cleaning method of a double-layer gas sprayer.
Background
The gas sprayer is widely applied to film deposition equipment in the manufacturing process of semiconductor chips, when the film deposition process is carried out, gas passes through holes distributed on the gas sprayer, chemical reaction is carried out in a process chamber, silicon oxide and silicon nitride films required by the process are generated, and the films are uniformly deposited on the surface of a silicon wafer. After the gas sprayer is used for a period of time, the surfaces of the small holes on the sprayer are also provided with films deposited on the hole walls, and the diameters of the small holes become smaller along with the increase of the thickness of the films, so that the flow of process gas is influenced, the film deposition efficiency is influenced, and the production cost of chips is increased. Therefore, the gas sprayer needs to be precisely cleaned regularly after being used for a period of time to remove the thin film sediment in the small holes, thereby achieving the aim of regeneration and use. The conventional gas sprayer has only one layer, the small holes on the surface are through holes which are consistent up and down, and the thin films in the holes can be cleaned through a chemical soaking process. The double-layer sprayer has an upper layer and a lower layer, two groups of different gases are sprayed, one layer is a through hole (an air inlet and an air outlet pass through a plurality of small holes on the surface), and the other layer is a blind hole (the air inlet is a large hole and the air outlet is a plurality of small holes), so that the film in the holes is difficult to remove by a conventional chemical soaking process.
Disclosure of Invention
The invention aims to solve the defects of the prior art and provides a cleaning method of a double-layer gas sprayer.
The invention adopts the following technical scheme to realize the aim:
a cleaning method of a double-layer gas sprayer comprises the following specific steps:
s1, checking parts:
checking the whole sprayer part, recording whether the adverse condition and the sediment are abnormal or not, and photographing;
s2, IPA wiping:
the method comprises the steps of wiping a sprayer part to be cleaned by using IPA (isopropyl alcohol) dipped with dust-free cloth to remove organic contamination on the surface of ceramic, and wiping the surface of the dust-free cloth without obvious dirt;
s3, soaking ammonia water and hydrogen peroxide:
immersing the sprayer component in a mixed solution of ammonia water, hydrogen peroxide and water for more than 30 minutes;
the volume ratio of the ammonia water, the hydrogen peroxide and the water is as follows: 1:1:1-1:1:3;
s4, washing with pure water for the first time:
taking out the sprayer part, and comprehensively flushing the part by using a water gun;
s5, cleaning with nitric acid and hydrofluoric acid:
the tool is connected with the air inlet, the other end of the tool is connected with the chemical liquid tank, and the mixed solution of nitric acid, hydrofluoric acid and water is filled into the sprayer through compressed air, so that the chemical liquid uniformly flows out through the small holes for 20-30S;
the volume ratio of nitric acid and hydrofluoric acid is as follows: 20:1:79-20:3:77;
s6, flushing with pure water for the second time:
taking out the parts, connecting pure water by using a tool, and filling the pure water into a sprayer through compressed air for 20-30min;
s7, soaking in pure water:
immersing the ceramic part in pure water for more than 30 minutes, and then drying the surface water by using compressed air;
s8, surface grinding:
sequentially using the scouring pads of the 800# and 3000# alumina abrasive materials to grind the surface of the sprayer, and ensuring uniform texture of the surface of the sprayer until the roughness reaches Ra less than or equal to 1um;
s9, high-pressure water washing:
washing the ground gas sprayer component with high pressure water at 100-150bar for 3-5 min, and drying the component with compressed air;
s10, cleaning with dry ice:
performing sand blasting cleaning on the surface of the component by using a dry ice sand blasting machine to remove byproducts adhered to the surface;
s11, ultrasonic cleaning:
transferring the parts to a 100-level clean room, then placing the parts into an ultrasonic cleaning tank, cleaning for 30 minutes, and turning the parts every 15 minutes;
s12, nitrogen purging:
carrying out surface purging on the flushed part by using nitrogen with the purity of 99.999% to remove water marks on the surface of the part;
s13, drying:
transferring the purged part into a clean drying oven, drying at 150 ℃ for 2-3 hours, and taking out the part after the part is naturally cooled.
The adverse conditions in step S1 include scratch, bruise, crack, unfilled corner, and oxide layer damage.
In step S1, the functional area and the working surface are inspected with emphasis by using a strong light and a magnifying glass.
In the step S3, the volume ratio of the ammonia water, the hydrogen peroxide and the water is as follows: ammonia water: hydrogen peroxide: water = 1L:1L:2L.
In the step S5, the volume ratio of nitric acid, hydrofluoric acid and water is as follows: nitric acid: hydrofluoric acid: water = 20L:3L:77L.
In step S10, a tool is used for connecting an air inlet of the air sprayer and a spray head of the dry ice blasting machine, dry ice is filled into the sprayer, and overflows from an air outlet small hole.
In step S10, dry ice blaster parameters: pressure: 4-5kg/cm2; the distance between the sand blasting gun head and the component is 15-20 cm; the angle is 60-90 degrees; time: 3-5 minutes; blasting media: solid dry ice; particle size: 0.1 microns.
In step S11, the ultrasonic frequency: 40KHZ; ultrasonic power density: 6-10 watts per square inch; pure water in the tank keeps overflowing, and the overflow flow rate is as follows: 20 litres per minute.
The beneficial effects of the invention are as follows: the invention can completely remove the particle pollutants and the deposition pollutants on the surface of the sprayer component and in the holes of the sprayer component, avoid the loss of the product, ensure the uniformity of the holes, prolong the single use time of the component, increase the use times of the sprayer component and reduce the use cost of the client.
Detailed Description
The principles and features of the present invention are described below in connection with specific embodiments, which are provided for illustration only and are not intended to limit the scope of the invention. The advantages and features of the present invention will become more apparent from the following description.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
The invention is further illustrated by the following examples:
a cleaning method of a double-layer gas sprayer comprises the following specific steps:
s1, checking parts:
checking the whole sprayer part, recording whether the adverse condition and the sediment are abnormal, photographing, and performing important checking on a functional area (a sealing surface) and a working surface (an area where a film is deposited) by using a strong light and a magnifying glass;
s2, IPA wiping:
the method comprises the steps of wiping a sprayer part to be cleaned by using IPA (isopropyl alcohol) dipped with dust-free cloth to remove organic contamination on the surface of ceramic, and wiping the surface of the dust-free cloth without obvious dirt;
s3, soaking ammonia water and hydrogen peroxide:
immersing the sprayer component in a mixed solution of ammonia water, hydrogen peroxide and water for more than 30 minutes;
the volume ratio of the ammonia water, the hydrogen peroxide and the water is as follows: 1:1:1-1:1:3;
in this embodiment, the volume ratio of ammonia water, hydrogen peroxide and water is: ammonia water: hydrogen peroxide: water = 1L:1L:2L;
s4, washing with pure water for the first time:
taking out the sprayer part, and comprehensively flushing the part by using a water gun;
s5, cleaning with nitric acid and hydrofluoric acid:
the tool is connected with the air inlet, the other end of the tool is connected with the chemical liquid tank, and the mixed solution of nitric acid, hydrofluoric acid and water is filled into the sprayer through compressed air, so that the chemical liquid uniformly flows out through the small holes for 20-30S;
the volume ratio of nitric acid and hydrofluoric acid is as follows: 20:1:79-20:3:77;
in this embodiment, the volume ratio of nitric acid, hydrofluoric acid, and water is: nitric acid: hydrofluoric acid: water = 20L:3L:77L;
s6, flushing with pure water for the second time:
taking out the parts, connecting pure water by using a tool, and filling the pure water into a sprayer through compressed air for 20-30min;
s7, soaking in pure water:
immersing the ceramic part in pure water for more than 30 minutes, and then drying the surface water by using compressed air;
s8, surface grinding:
sequentially using the scouring pads of the 800# and 3000# alumina abrasive materials to grind the surface of the sprayer, and ensuring uniform texture of the surface of the sprayer until the roughness reaches Ra less than or equal to 1um;
s9, high-pressure water washing:
washing the ground gas sprayer component with high pressure water at 100-150bar for 3-5 min, and drying the component with compressed air;
s10, cleaning with dry ice:
performing sand blasting cleaning on the surface of the component by using a dry ice sand blasting machine to remove byproducts adhered to the surface;
connecting an air inlet of a gas sprayer and a spray head of a dry ice blasting machine by using a tool, filling dry ice into the sprayer, overflowing from an air outlet small hole, and carrying out parameters of the dry ice blasting machine: pressure: 4-5kg/cm2; the distance between the sand blasting gun head and the component is 15-20 cm; the angle is 60-90 degrees; time: 3-5 minutes; blasting media: solid dry ice; particle size: 0.1 microns;
s11, ultrasonic cleaning:
transferring the parts to a 100-level clean room, then placing the parts into an ultrasonic cleaning tank, cleaning for 30 minutes, and turning the parts every 15 minutes;
ultrasonic frequency: 40KHZ; ultrasonic power density: 6-10 watts per square inch; pure water in the tank keeps overflowing, and the overflow flow rate is as follows: 20 liters per minute;
s12, nitrogen purging:
carrying out surface purging on the flushed part by using nitrogen with the purity of 99.999% to remove water marks on the surface of the part;
s13, drying:
transferring the purged part into a clean drying oven, drying at 150 ℃ for 2-3 hours, and taking out the part after the part is naturally cooled.
The ammonia water and hydrogen peroxide are used for soaking the component, so that most of pollutants on the surface and in the holes of the component can be removed; the nitric acid and hydrofluoric acid soaking component is used for removing trace metals stained in the holes inside the gas sprayer; the compressed air is used for filling the chemical solvent into the gas sprayer, so that each gas outlet small hole can be uniformly cleaned; particle contaminants in the pores can be removed using a dry ice blasting process; the surface of the gas sprayer component is cleaned by ultrasonic cleaning and ultra-pure nitrogen, so that surface particle pollutants can be greatly reduced.
The cleaning method is suitable for cleaning aluminum nitride ceramic spare parts of process equipment such as metal conductive material deposition, semiconductor material deposition, insulating material deposition and the like in the field of semiconductor integrated circuit chip manufacturing and equipment for a thin film deposition process.
The invention can completely remove the particle pollutants and the deposition pollutants on the surface of the sprayer component and in the holes of the sprayer component, avoid the loss of the product, ensure the uniformity of the holes, prolong the single use time of the component, increase the use times of the sprayer component and reduce the use cost of the client.
While the invention has been described above with reference to specific embodiments, it will be apparent that the invention is not limited to the above embodiments, but is intended to cover various modifications of the method concepts and technical solutions of the invention, or applications without modifications, in other applications.
Claims (8)
1. The cleaning method of the double-layer gas sprayer is characterized by comprising the following specific steps of:
s1, checking parts:
checking the whole sprayer part, recording whether the adverse condition and the sediment are abnormal or not, and photographing;
s2, IPA wiping:
the method comprises the steps of wiping a sprayer part to be cleaned by using IPA (isopropyl alcohol) dipped with dust-free cloth to remove organic contamination on the surface of ceramic, and wiping the surface of the dust-free cloth without obvious dirt;
s3, soaking ammonia water and hydrogen peroxide:
immersing the sprayer component in a mixed solution of ammonia water, hydrogen peroxide and water for more than 30 minutes;
the volume ratio of the ammonia water, the hydrogen peroxide and the water is as follows: 1:1:1-1:1:3;
s4, washing with pure water for the first time:
taking out the sprayer part, and comprehensively flushing the part by using a water gun;
s5, cleaning with nitric acid and hydrofluoric acid:
the tool is connected with the air inlet, the other end of the tool is connected with the chemical liquid tank, and the mixed solution of nitric acid, hydrofluoric acid and water is filled into the sprayer through compressed air, so that the chemical liquid uniformly flows out through the small holes for 20-30S;
the volume ratio of nitric acid and hydrofluoric acid is as follows: 20:1:79-20:3:77;
s6, flushing with pure water for the second time:
taking out the parts, connecting pure water by using a tool, and filling the pure water into a sprayer through compressed air for 20-30min;
s7, soaking in pure water:
immersing the ceramic part in pure water for more than 30 minutes, and then drying the surface water by using compressed air;
s8, surface grinding:
sequentially using the scouring pads of the 800# and 3000# alumina abrasive materials to grind the surface of the sprayer, and ensuring uniform texture of the surface of the sprayer until the roughness reaches Ra less than or equal to 1um;
s9, high-pressure water washing:
washing the ground gas sprayer component with high pressure water at 100-150bar for 3-5 min, and drying the component with compressed air;
s10, cleaning with dry ice:
performing sand blasting cleaning on the surface of the component by using a dry ice sand blasting machine to remove byproducts adhered to the surface;
s11, ultrasonic cleaning:
transferring the parts to a 100-level clean room, then placing the parts into an ultrasonic cleaning tank, cleaning for 30 minutes, and turning the parts every 15 minutes;
s12, nitrogen purging:
carrying out surface purging on the flushed part by using nitrogen with the purity of 99.999% to remove water marks on the surface of the part;
s13, drying:
transferring the purged part into a clean drying oven, drying at 150 ℃ for 2-3 hours, and taking out the part after the part is naturally cooled.
2. The method according to claim 1, wherein the defects in the step S1 include scratches, bruises, cracks, unfilled corners, and oxide layer damage.
3. The method according to claim 2, wherein in step S1, the functional area and the working surface are inspected with emphasis by using a strong light and a magnifying glass.
4. The method for cleaning a double-layer gas sprayer according to claim 3, wherein in the step S3, the volume ratio of ammonia water, hydrogen peroxide and water is: ammonia water: hydrogen peroxide: water = 1L:1L:2L.
5. The method for cleaning a double-layer gas shower according to claim 4, wherein in step S5, the volume ratio of nitric acid, hydrofluoric acid, and water is: nitric acid: hydrofluoric acid: water = 20L:3L:77L.
6. The method according to claim 5, wherein in step S10, the dry ice is filled into the shower and overflows from the air outlet hole by connecting the air inlet of the shower with the nozzle of the dry ice blasting machine by means of a tool.
7. The method according to claim 6, wherein in step S10, dry ice blasting machine parameters: pressure: 4-5kg/cm2; the distance between the sand blasting gun head and the component is 15-20 cm; the angle is 60-90 degrees; time: 3-5 minutes; blasting media: solid dry ice; particle size: 0.1 microns.
8. The method for cleaning a double-layer gas shower according to claim 7, wherein in step S11, the ultrasonic frequency is: 40KHZ; ultrasonic power density: 6-10 watts per square inch; pure water in the tank keeps overflowing, and the overflow flow rate is as follows: 20 litres per minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311728773.7A CN117753710A (en) | 2023-12-15 | 2023-12-15 | Cleaning method of double-layer gas sprayer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311728773.7A CN117753710A (en) | 2023-12-15 | 2023-12-15 | Cleaning method of double-layer gas sprayer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117753710A true CN117753710A (en) | 2024-03-26 |
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ID=90311558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311728773.7A Pending CN117753710A (en) | 2023-12-15 | 2023-12-15 | Cleaning method of double-layer gas sprayer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117753710A (en) |
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2023
- 2023-12-15 CN CN202311728773.7A patent/CN117753710A/en active Pending
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