CN113299532A - Cleaning regeneration method and device for wafer ETCH process equipment electrostatic chuck - Google Patents
Cleaning regeneration method and device for wafer ETCH process equipment electrostatic chuck Download PDFInfo
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- CN113299532A CN113299532A CN202110498080.8A CN202110498080A CN113299532A CN 113299532 A CN113299532 A CN 113299532A CN 202110498080 A CN202110498080 A CN 202110498080A CN 113299532 A CN113299532 A CN 113299532A
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- electrostatic chuck
- alumina ceramic
- ceramic surface
- hydrogen peroxide
- soaking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a cleaning regeneration method of an electrostatic chuck of wafer ETCH processing equipment, which comprises the following steps: step one, treating the surface of an anodic aluminum oxide base of the electrostatic chuck; step two, protecting the surface of an anodic aluminum oxide base of the electrostatic chuck; soaking the electrostatic chuck in an organic solvent; polishing the alumina ceramic surface of the electrostatic chuck; step five, soaking the electrostatic chuck in hydrogen peroxide; step six, polishing the alumina ceramic surface of the electrostatic chuck; step seven, soaking the electrostatic chuck in hot water; step eight, soaking the electrostatic chuck in ammonia water and hydrogen peroxide; step nine, continuously polishing the alumina ceramic surface of the electrostatic chuck; step ten, wiping the alumina ceramic surface of the electrostatic chuck by using a hydrofluoric/nitric acid solution; step eleven, wiping the alumina ceramic surface of the electrostatic chuck with hydrochloric acid hydrogen peroxide solution; step twelve, cleaning the electrostatic chuck by ultrasonic waves; thirteen, removing protection and wiping with an organic solvent; and step fourteen, drying the electrostatic chuck by a dust-free oven.
Description
Technical Field
The invention relates to the field of semiconductor equipment, in particular to a cleaning regeneration method of a wafer ETCH process equipment component
Background
Etching, english is ETCH, which is a very important step in semiconductor manufacturing process, microelectronic IC manufacturing process and micro-nano manufacturing process. In the dry etching process, the electrostatic chuck can be strongly bombarded by high-frequency plasma, the surface of the electrostatic chuck can be corroded and damaged to a certain extent, meanwhile, silicon, nitrogen and polymers thereof bombarded by the high-frequency plasma can fill the whole chamber, and at least part of the substances can be deposited on the surface of the electrostatic chuck to form a deposition film. In such an environment, after a long operation time, the service performance of the electrostatic chuck is greatly reduced, which not only causes the chamber to be polluted by particle impurities and the wafer to be scrapped, but also causes high replacement and maintenance costs of equipment components.
Disclosure of Invention
In view of the problems of the prior art, the present invention provides a cleaning and regeneration method for an electrostatic chuck of a wafer ETCH processing equipment, so as to solve at least one of the above problems.
The technical scheme of the invention is as follows: a cleaning and regenerating method for electrostatic chuck of wafer ETCH process equipment is characterized by comprising the following steps:
step one, treating the surface of an anodic aluminum oxide base of the electrostatic chuck;
step two, protecting the surface of an anodic aluminum oxide base of the electrostatic chuck;
soaking the electrostatic chuck in an organic solvent;
polishing the alumina ceramic surface of the electrostatic chuck;
step five, soaking the electrostatic chuck in hydrogen peroxide;
step six, polishing the alumina ceramic surface of the electrostatic chuck;
step seven, soaking the electrostatic chuck in hot water;
step eight, soaking the electrostatic chuck in ammonia water and hydrogen peroxide;
step nine, continuously polishing the alumina ceramic surface of the electrostatic chuck;
step ten, wiping the alumina ceramic surface of the electrostatic chuck by using a hydrofluoric/nitric acid solution;
step eleven, wiping the alumina ceramic surface of the electrostatic chuck with hydrochloric acid hydrogen peroxide solution;
step twelve, cleaning the electrostatic chuck by ultrasonic waves;
step thirteen, removing the protection on the anodic alumina base of the electrostatic chuck and wiping the anodic alumina base of the electrostatic chuck by using an organic solvent;
and step fourteen, drying the electrostatic chuck by a dust-free oven.
Firstly, polishing an anodic aluminum oxide base and wiping the anodic aluminum oxide base by using an organic solvent to remove a deposited film and particles on the surface of the anodic aluminum oxide base; then the alumina ceramic surface is soaked in an organic solvent, hydrogen peroxide, hot water, ammonia water and hydrogen peroxide, polished, wiped with hydrofluoric acid and nitric acid, wiped with hydrogen peroxide hydrochloride, ultrasonically cleaned and dried, and silicide and other deposited films and pollutants on the surface of the alumina ceramic surface can be removed. The surface of the treated electrostatic chuck is clean, flat and free of pollutants, and the requirement of cleaning and regeneration is met. The deposited film layer and pollutants, such as silicon, nitrogen and polymers thereof, on the surface of the electrostatic chuck are removed, and the cleaning requirement of the electrostatic chuck is met.
Preferably, in the step one, the surface of the anodic aluminum oxide base of the electrostatic chuck is polished manually by adopting muskmelon cloth.
Preferably, in the first step, dry ice is sprayed on the surface of the anodized aluminum base of the electrostatic chuck, the dry ice spraying pressure is 40Psi, and the nozzle of the dry ice is 5cm away from the component.
Preferably, in the second step, a PVC tape is used to seal and protect the surface of the anodized aluminum base of the electrostatic chuck.
Preferably, in the third step, the protected electrostatic chuck is placed into an organic solvent for soaking, the alumina ceramic surface of the electrostatic chuck faces downwards, the organic solvent is isopropanol, the temperature of the solvent is 20 ℃ at room temperature, the soaking time is 15 minutes, and then the electrostatic chuck is taken out and washed clean by pure water.
Further preferably, in the fourth step, the aluminum oxide ceramic surface of the electrostatic chuck is integrally polished by adopting the muskmelon cloth for 2 minutes, and then the electrostatic chuck is rinsed by pure water.
Preferably, in the fifth step, the electrostatic chuck is soaked in hydrogen peroxide, the alumina ceramic surface of the electrostatic chuck faces downwards, the solution temperature is 20 ℃ and the soaking time is 15 minutes, and then the electrostatic chuck is taken out and washed clean by pure water.
Preferably, in the sixth step, the aluminum oxide ceramic surface of the electrostatic chuck is integrally polished by adopting the muskmelon cloth for 2 minutes, and then the electrostatic chuck is rinsed by pure water.
Preferably, in the seventh step, the electrostatic chuck is soaked in hot water, the alumina ceramic surface of the electrostatic chuck faces downwards, the temperature of the hot water is 65 ℃, the soaking time is 30 minutes, and then the electrostatic chuck is taken out and washed clean by pure water.
Preferably, in the step eight, the electrostatic chuck is soaked in ammonia hydrogen peroxide, the alumina ceramic surface of the electrostatic chuck faces downwards, the solution temperature is 20 ℃, the soaking time is 15 minutes, and then the part is taken out and washed clean by pure water.
Further preferably, the ammonia water hydrogen peroxide solution comprises the following components in percentage by volume: 25% of ammonia water, 25% of hydrogen peroxide and 50% of pure water.
Further preferably, in the ninth step, the aluminum oxide ceramic surface of the electrostatic chuck is integrally polished by adopting the muskmelon cloth for 2 minutes, and then the electrostatic chuck is rinsed by pure water.
Preferably, in the step ten, the hydrofluoric/nitric acid solution is dipped in a dust-free cloth to wipe the alumina ceramic surface of the electrostatic chuck for 30 seconds, and then the electrostatic chuck is rinsed with pure water, and the steps are repeated for 3 times.
Further preferably, the hydrofluoric/nitric acid solution comprises the following components in percentage by volume: 8% of nitric acid, 8% of fluoric acid and 84% of pure water.
Preferably, in the eleventh step, the aluminum oxide ceramic surface of the electrostatic chuck is wiped with hydrochloric acid hydrogen peroxide solution dipped in dust-free cloth for 30 seconds, and then the electrostatic chuck is rinsed with pure water, and the steps are repeated for 4 times.
Further preferably, the volume percentages of the hydrogen peroxide hydrochloride solution are respectively as follows: 10% of hydrochloric acid, 35% of hydrogen peroxide and 55% of pure water.
More preferably, in the twelfth step, the electrostatic chuck is placed in an ultrasonic cleaning tank for cleaning, the overflow amount of pure water is 250L/h, the ultrasonic intensity is 5w/in2, and the cleaning time is 25 minutes.
Further preferably, in the thirteenth step, the protective tape is removed, and the protective area is wiped with an isopropyl alcohol solution.
Further preferably, in the fourteenth step, the electrostatic chuck is placed in a dust-free oven, baked at a constant temperature of 105 ℃ for 2 hours, cooled to room temperature, and then the component is taken out.
Drawings
FIG. 1 is a schematic flow diagram of the present invention;
FIG. 2 is a 1000 times magnified image of the alumina ceramic surface of the electrostatic chuck prior to cleaning;
fig. 3 is a 1000 x magnified image of the alumina ceramic surface of the electrostatic chuck after cleaning.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
As shown in fig. 1-3, the technical solution of the present invention is: a cleaning regeneration method for electrostatic chuck of wafer ETCH process equipment comprises:
step one, treating the surface of an anodic aluminum oxide base of the electrostatic chuck; step two, protecting the surface of an anodic aluminum oxide base of the electrostatic chuck; soaking the electrostatic chuck in an organic solvent; polishing the alumina ceramic surface of the electrostatic chuck; step five, soaking the electrostatic chuck in hydrogen peroxide; step six, polishing the alumina ceramic surface of the electrostatic chuck; step seven, soaking the electrostatic chuck in hot water; step eight, soaking the electrostatic chuck in ammonia water and hydrogen peroxide; step nine, continuously polishing the alumina ceramic surface of the electrostatic chuck; step ten, wiping the alumina ceramic surface of the electrostatic chuck by using a hydrofluoric/nitric acid solution; step eleven, wiping the alumina ceramic surface of the electrostatic chuck with hydrochloric acid hydrogen peroxide solution; step twelve, cleaning the electrostatic chuck by ultrasonic waves; step thirteen, removing the protection on the anodic alumina base of the electrostatic chuck and wiping the anodic alumina base of the electrostatic chuck by using an organic solvent; and step fourteen, drying the electrostatic chuck by a dust-free oven.
Firstly, polishing an anodic aluminum oxide base and wiping the anodic aluminum oxide base by using an organic solvent to remove a deposited film and particles on the surface of the anodic aluminum oxide base; then the alumina ceramic surface is soaked in an organic solvent, hydrogen peroxide, hot water, ammonia water and hydrogen peroxide, polished, wiped with hydrofluoric acid and nitric acid, wiped with hydrogen peroxide hydrochloride, ultrasonically cleaned and dried, and silicide and other deposited films and pollutants on the surface of the alumina ceramic surface can be removed. The surface of the treated electrostatic chuck is clean, flat and free of pollutants, and the requirement of cleaning and regeneration is met. The deposited film layer and pollutants, such as silicon, nitrogen and polymers thereof, on the surface of the electrostatic chuck are removed, and the cleaning requirement of the electrostatic chuck is met.
Preferably, in the step one, the surface of the anodic aluminum oxide base of the electrostatic chuck is polished manually by adopting muskmelon cloth.
Further preferably, in the first step, dry ice is sprayed on the surface of the anodized aluminum base of the electrostatic chuck, the dry ice spraying pressure is 40Psi, and the nozzle of the dry ice is 5cm away from the component.
Preferably, in the second step, a PVC tape is used to seal and protect the surface of the anodized aluminum base of the electrostatic chuck.
Preferably, in the third step, the protected electrostatic chuck is placed into an organic solvent for soaking, the alumina ceramic surface of the electrostatic chuck faces downwards, the organic solvent is isopropanol, the temperature of the solvent is 20 ℃ at room temperature, the soaking time is 15 minutes, and then the electrostatic chuck is taken out and washed clean by pure water.
Preferably, in the fourth step, the aluminum oxide ceramic surface of the electrostatic chuck is integrally polished by adopting the muskmelon cloth for 2 minutes, and then the electrostatic chuck is rinsed by pure water.
Preferably, in the fifth step, the electrostatic chuck is soaked in hydrogen peroxide, the alumina ceramic surface of the electrostatic chuck faces downwards, the solution temperature is 20 ℃ and the soaking time is 15 minutes, and then the electrostatic chuck is taken out and washed clean by pure water.
Further preferably, in the sixth step, the aluminum oxide ceramic surface of the electrostatic chuck is integrally polished by adopting the muskmelon cloth for 2 minutes, and then the electrostatic chuck is rinsed by pure water.
Preferably, in the seventh step, the electrostatic chuck is soaked in hot water, the alumina ceramic surface of the electrostatic chuck faces downwards, the temperature of the hot water is 65 ℃, the soaking time is 30 minutes, and then the electrostatic chuck is taken out and washed clean by pure water.
Preferably, in the step eight, the electrostatic chuck is placed into ammonia hydrogen peroxide for soaking, the alumina ceramic surface of the electrostatic chuck faces downwards, the solution temperature is 20 ℃, the soaking time is 15 minutes, and then the part is taken out and washed clean by pure water.
Further preferably, the volume percentages of the ammonia water hydrogen peroxide solution are respectively as follows: 25% of ammonia water, 25% of hydrogen peroxide and 50% of pure water.
Further preferably, in the ninth step, the aluminum oxide ceramic surface of the electrostatic chuck is integrally polished by adopting the muskmelon cloth for 2 minutes, and then the electrostatic chuck is rinsed by pure water.
Preferably, in the step ten, the aluminum oxide ceramic surface of the electrostatic chuck is wiped by dipping a hydrofluoric/nitric acid solution with a dust-free cloth for 30 seconds, and then is rinsed with pure water, and the steps are repeated for 3 times.
Further preferably, the hydrofluoric/nitric acid solution comprises the following components in percentage by volume: 8% of nitric acid, 8% of fluoric acid and 84% of pure water.
Preferably, in the eleventh step, the aluminum oxide ceramic surface of the electrostatic chuck is wiped by dipping hydrochloric acid hydrogen peroxide solution on dust-free cloth for 30 seconds, and then the electrostatic chuck is rinsed by pure water, and the steps are repeated for 4 times.
Further preferably, the volume percentages of the hydrogen peroxide hydrochloride solution are respectively as follows: 10% of hydrochloric acid, 35% of hydrogen peroxide and 55% of pure water.
More preferably, in the twelfth step, the electrostatic chuck is placed in an ultrasonic cleaning tank for cleaning, the overflow amount of pure water is 250L/h, the ultrasonic intensity is 5w/in2, and the cleaning time is 25 minutes.
Further preferably, in step thirteen, the protective tape is removed and the protective area is wiped with an isopropyl alcohol solution.
More preferably, in the fourteenth step, the electrostatic chuck is placed in a dust-free oven, baked at a constant temperature of 105 ℃ for 2 hours, cooled to room temperature, and then the part is taken out.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that it is obvious to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and these modifications and improvements should also be considered as the protection scope of the present invention.
Claims (10)
1. A cleaning and regenerating method for electrostatic chuck of wafer ETCH process equipment is characterized by comprising the following steps:
step one, treating the surface of an anodic aluminum oxide base of the electrostatic chuck;
step two, protecting the surface of an anodic aluminum oxide base of the electrostatic chuck;
soaking the electrostatic chuck in an organic solvent;
polishing the alumina ceramic surface of the electrostatic chuck;
step five, soaking the electrostatic chuck in hydrogen peroxide;
step six, polishing the alumina ceramic surface of the electrostatic chuck;
step seven, soaking the electrostatic chuck in hot water;
step eight, soaking the electrostatic chuck in ammonia water and hydrogen peroxide;
step nine, continuously polishing the alumina ceramic surface of the electrostatic chuck;
step ten, wiping the alumina ceramic surface of the electrostatic chuck by using a hydrofluoric/nitric acid solution;
step eleven, wiping the alumina ceramic surface of the electrostatic chuck with hydrochloric acid hydrogen peroxide solution;
step twelve, cleaning the electrostatic chuck by ultrasonic waves;
step thirteen, removing the protection on the anodic alumina base of the electrostatic chuck and wiping the anodic alumina base of the electrostatic chuck by using an organic solvent;
and step fourteen, drying the electrostatic chuck by a dust-free oven.
2. The method according to claim 1, wherein in the first step, the surface of the anodized aluminum base of the electrostatic chuck is polished manually using a cloth of snake melon.
3. The method according to claim 2, wherein in the first step, dry ice is sprayed on the surface of the anodized aluminum base of the electrostatic chuck, the dry ice spraying pressure is 40Psi, and the nozzle of the dry ice is 5cm away from the component.
4. The method according to claim 1, wherein in the second step, a PVC tape is used to seal and protect the surface of the anodized aluminum base of the electrostatic chuck.
5. The method according to claim 1, wherein the electrostatic chuck of the wafer ETCH processing equipment is soaked in an organic solvent, the alumina ceramic surface of the electrostatic chuck is faced down, the organic solvent is isopropanol, the temperature of the solvent is 20 ℃ and the soaking time is 15 minutes, and then the electrostatic chuck is taken out and washed clean by pure water.
6. The method according to claim 1, wherein in the fourth step, the electrostatic chuck of the wafer ETCH processing equipment is entirely polished with a cloth of snake melon for 2 minutes, and then rinsed with pure water.
7. The method according to claim 1, wherein in the fifth step, the electrostatic chuck is soaked in hydrogen peroxide solution with the alumina ceramic surface facing down, the solution temperature is 20 ℃ and the soaking time is 15 minutes, and then the electrostatic chuck is taken out and washed clean with pure water.
8. The method according to claim 1, wherein in step six, the electrostatic chuck of the wafer ETCH processing equipment is entirely polished with a cloth of snake melon for 2 minutes, and then rinsed with pure water.
9. The method according to claim 1, wherein in step seven, the electrostatic chuck is immersed in hot water with the alumina ceramic surface facing downward, the hot water temperature is 65 ℃, the immersion time is 30 minutes, and then the electrostatic chuck is taken out and washed clean with pure water.
10. The method according to claim 1, wherein in step eight, the electrostatic chuck is immersed in the ammonia hydrogen peroxide solution with the alumina ceramic surface facing down, the solution temperature is 20 ℃, the immersion time is 15 minutes, and then the part is taken out and washed clean with pure water, wherein the ammonia hydrogen peroxide solution has the following volume percentages: 25% of ammonia water, 25% of hydrogen peroxide and 50% of pure water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110498080.8A CN113299532A (en) | 2021-05-08 | 2021-05-08 | Cleaning regeneration method and device for wafer ETCH process equipment electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110498080.8A CN113299532A (en) | 2021-05-08 | 2021-05-08 | Cleaning regeneration method and device for wafer ETCH process equipment electrostatic chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113299532A true CN113299532A (en) | 2021-08-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110498080.8A Pending CN113299532A (en) | 2021-05-08 | 2021-05-08 | Cleaning regeneration method and device for wafer ETCH process equipment electrostatic chuck |
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| CN (1) | CN113299532A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113894112A (en) * | 2021-09-14 | 2022-01-07 | 先导薄膜材料有限公司 | Indium foil surface treatment method |
| CN115254766A (en) * | 2022-06-16 | 2022-11-01 | 上海富乐德智能科技发展有限公司 | Cleaning regeneration method of aluminum oxide ceramic ejector of semiconductor equipment |
-
2021
- 2021-05-08 CN CN202110498080.8A patent/CN113299532A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113894112A (en) * | 2021-09-14 | 2022-01-07 | 先导薄膜材料有限公司 | Indium foil surface treatment method |
| CN113894112B (en) * | 2021-09-14 | 2023-05-30 | 先导薄膜材料有限公司 | Indium foil surface treatment method |
| CN115254766A (en) * | 2022-06-16 | 2022-11-01 | 上海富乐德智能科技发展有限公司 | Cleaning regeneration method of aluminum oxide ceramic ejector of semiconductor equipment |
| CN115254766B (en) * | 2022-06-16 | 2024-01-19 | 上海富乐德智能科技发展有限公司 | Cleaning and regenerating method for alumina ceramic injector of semiconductor equipment |
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