CN117729829A - High-efficiency heat source battery - Google Patents
High-efficiency heat source battery Download PDFInfo
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- CN117729829A CN117729829A CN202311778015.6A CN202311778015A CN117729829A CN 117729829 A CN117729829 A CN 117729829A CN 202311778015 A CN202311778015 A CN 202311778015A CN 117729829 A CN117729829 A CN 117729829A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000010248 power generation Methods 0.000 description 8
- 230000004927 fusion Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000013535 sea water Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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Abstract
The invention discloses a high-efficiency heat source battery, which belongs to the technical field of batteries, wherein a battery main body of the heat source battery comprises a semiconductor A and a semiconductor B which are both N-type, the doping concentration of the semiconductor A is lower than that of the semiconductor B, and the semiconductor A and the semiconductor B are contacted with each other to form a semiconductor device; the metal layer I on the outer side surface of the semiconductor A is used as a negative electrode; the metal layer II on the outer side of the semiconductor B is used as a positive electrode. Through the obvious potential difference in the contact area between the semiconductor A and the semiconductor B, the battery can absorb the heat of surrounding objects, and the purpose of directly converting the absorbed heat into electric energy is realized. Compared with the traditional heat source battery, the invention has the advantages of simple structure, simple and convenient manufacture and low cost, can absorb the heat energy of surrounding objects to convert the heat energy into electric energy in an all-weather, high-efficient and stable way, and can reduce the temperature of the surface of the earth by absorbing a large amount of heat of the objects on the surface of the earth, thereby being environment-friendly.
Description
Technical Field
The invention belongs to the technical field of batteries, and particularly relates to a high-efficiency heat source battery.
Background
Currently, the increasingly serious energy crisis problem and climate warming problem have seriously affected human survival and development.
For this reason, solar photovoltaic power generation, wind power generation, and the like are being widely popularized throughout the world. However, both photovoltaic power generation and wind power generation have a serious disadvantage in that they are intermittently operated. And the photovoltaic power generation has low photoelectric conversion rate and smaller power generation. The so-called ultimate energy source of controlled nuclear fusion is very well seen, and unfortunately commercial applications of controlled nuclear fusion are always far from desired.
Humans must find new types of inexhaustible clean energy. The heat energy radiated from the sun is such energy source. The sun radiates a great amount of heat to the earth's surface every moment, 24 hours a day, sunny days, rainy and snowy days, all objects on the earth's surface (including atmosphere, sea water, soil, etc.), whether the temperature is room temperature, high temperature, low temperature, they all contain a great amount of heat. The structure and manufacture of the conventional heat source battery are complex, so that the cost of the conventional heat source battery is high.
Disclosure of Invention
In order to solve the above problems, the present invention provides a high-efficiency heat source battery.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
a high efficiency heat source battery comprising a battery body comprising an N-type semiconductor a and an N-type semiconductor B, and an electrode comprising a negative electrode and a positive electrode; the doping concentration of the semiconductor A is lower than that of the semiconductor B, and the semiconductor A and the semiconductor B are contacted with each other to form a semiconductor device; the outer side surface of the semiconductor A is provided with a metal layer I, and the metal layer I is used as a negative electrode of the heat source battery; and a metal layer II is arranged on the outer side surface of the semiconductor B, and the metal layer II is used as the positive electrode of the heat source battery.
Further, the shape and the area of the metal layer I are respectively the same as those of the outer side face of the semiconductor A, and the shape and the area of the metal layer II are respectively the same as those of the outer side face of the semiconductor B.
Further, the base material of the semiconductor a and the base material of the semiconductor B are both semiconductor silicon.
Compared with the prior art, the invention has the following technical progress:
in the invention, obvious potential difference occurs in the contact area of the semiconductor A and the semiconductor B, so that the battery can absorb heat of surrounding objects, and the purpose of directly converting the absorbed heat into electric energy is realized. The high-efficiency heat source battery provided by the invention does not need irradiation of sunlight at all, can be converted into electric energy in all weather, high-efficiency and uninterrupted mode, is stable and can not pass through any intermediate mechanism to be directly converted into electric energy, and the high-efficiency heat source battery can absorb a large amount of heat of objects on the surface of the earth to be converted into electric energy, so that the temperature of the surface of the earth is directly reduced, and the high-efficiency heat source battery is environment-friendly and has profound significance.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention.
In the drawings:
fig. 1 is a schematic structural diagram of a high-efficiency heat source battery according to an embodiment of the present invention;
in the figure:
1-metal layer I, 2-semiconductor A, 3-semiconductor B, 4-negative electrode, 5-metal layer II, 6-positive electrode.
Description of the embodiments
The following embodiments may be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments. Embodiments of the present invention will be described below with reference to the accompanying drawings.
As shown in fig. 1, a high-efficiency heat source battery includes a battery body including an N-type semiconductor A2 and an N-type semiconductor B3, and an electrode including a negative electrode 6 and a positive electrode 5; the semiconductor A2 and the semiconductor B3 are contacted with each other to form one semiconductor device; the outer side surface of the semiconductor A2 is provided with a metal layer I1, and the metal layer I1 is used as a negative electrode 4; the outer side surface of the semiconductor B3 is provided with a metal layer II 5, and the metal layer II 5 is used as a positive electrode 6. The heat source battery adopting the structure is simple and convenient to manufacture and low in cost.
As a preferable configuration, the shape and area of the metal layer i 1 are the same as the shape and area of the outer side surface of the semiconductor A2, and the shape and area of the metal layer ii 5 are the same as the shape and area of the outer side surface of the semiconductor B3. The metal layer I and the metal layer II adopting the structure effectively protect the semiconductor A and the semiconductor B and avoid the semiconductor from being damaged.
In a specific manufacturing process, the base material of the semiconductor A2 and the base material of the semiconductor B3 are both semiconductor silicon.
The working principle of the invention is as follows:
the semiconductor A and the semiconductor B are contacted with each other to form a semiconductor device, and the concentration of free electrons in the semiconductor A is lower than that in the semiconductor B. According to semiconductor theory, a significant potential difference will occur in the contact areas of semiconductor a and semiconductor B.
The above facts show that the structure forms a high-efficiency heat source battery, potential difference exists in the contact area of the semiconductor A and the semiconductor B, and the heat can be absorbed by the contact area, and the absorbed heat can be directly converted into electric energy. And under the condition of no temperature difference, the heat of surrounding objects can be absorbed by the high-efficiency heat source battery. The solar energy is not required to be irradiated at all, 24 hours per day, and the solar energy is converted into electric energy in all weather, high efficiency and uninterrupted, stably and directly without any intermediate mechanism. When the heat of the object on the earth surface is greatly absorbed by the heat source battery and converted into electric energy, the temperature of the earth surface can be directly reduced, and the environment is protected.
In addition, because all the components of the heat source battery are doped in N type, the series resistance of the battery is very small, the output current is very large, and the generated power is greatly increased. The high-efficiency heat source battery provided by the invention has the power generation power 10% higher than that of the conventional heat source battery as proved by multiple experiments.
In conclusion, the invention has the advantages of simple structure, simple and convenient manufacture, low manufacture cost, remarkable power generation effect and convenient popularization and application; meanwhile, the heat source battery absorbs heat energy to generate electricity, so that the temperature of the earth is reduced, and the solar energy battery is environment-friendly and has profound significance for protecting the earth environment.
Finally, it should be noted that: the foregoing description is only a preferred embodiment of the present invention, and the present invention is not limited thereto, but it is to be understood that modifications and equivalents of some of the technical features described in the foregoing embodiments may be made by those skilled in the art, although the present invention has been described in detail with reference to the foregoing embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (3)
1. A high efficiency heat source battery, characterized by: the heat source battery comprises a battery body and an electrode, wherein the battery body comprises an N-type semiconductor A and an N-type semiconductor B, and the electrode comprises a negative electrode and a positive electrode; the doping concentration of the semiconductor A is lower than that of the semiconductor B, and the semiconductor A and the semiconductor B are contacted with each other to form a semiconductor device; the outer side surface of the semiconductor A is provided with a metal layer I, and the metal layer I is used as a negative electrode of the heat source battery; and a metal layer II is arranged on the outer side surface of the semiconductor B, and the metal layer II is used as the positive electrode of the heat source battery.
2. A high efficiency heat source battery as defined in claim 1, wherein: the shape and the area of the metal layer I are respectively the same as those of the outer side face of the semiconductor A, and the shape and the area of the metal layer II are respectively the same as those of the outer side face of the semiconductor B.
3. A high efficiency heat source battery as defined in claim 2, wherein: the base material of the semiconductor A and the base material of the semiconductor B are both semiconductor silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311778015.6A CN117729829A (en) | 2023-12-22 | 2023-12-22 | High-efficiency heat source battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311778015.6A CN117729829A (en) | 2023-12-22 | 2023-12-22 | High-efficiency heat source battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117729829A true CN117729829A (en) | 2024-03-19 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311778015.6A Pending CN117729829A (en) | 2023-12-22 | 2023-12-22 | High-efficiency heat source battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117729829A (en) |
-
2023
- 2023-12-22 CN CN202311778015.6A patent/CN117729829A/en active Pending
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