CN117715411A - 半导体存储器装置及其制造方法 - Google Patents
半导体存储器装置及其制造方法 Download PDFInfo
- Publication number
- CN117715411A CN117715411A CN202310541788.6A CN202310541788A CN117715411A CN 117715411 A CN117715411 A CN 117715411A CN 202310541788 A CN202310541788 A CN 202310541788A CN 117715411 A CN117715411 A CN 117715411A
- Authority
- CN
- China
- Prior art keywords
- insulating layer
- bonding layer
- semiconductor memory
- memory device
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 80
- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 230000002093 peripheral effect Effects 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 239000003990 capacitor Substances 0.000 claims abstract description 48
- 239000010410 layer Substances 0.000 description 276
- 239000000463 material Substances 0.000 description 120
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 20
- 239000005380 borophosphosilicate glass Substances 0.000 description 20
- 239000005388 borosilicate glass Substances 0.000 description 20
- 238000005530 etching Methods 0.000 description 20
- 239000012535 impurity Substances 0.000 description 20
- 239000005360 phosphosilicate glass Substances 0.000 description 20
- 229910052814 silicon oxide Inorganic materials 0.000 description 20
- 238000010586 diagram Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 15
- 229910052721 tungsten Inorganic materials 0.000 description 15
- 239000010937 tungsten Substances 0.000 description 15
- OJCDKHXKHLJDOT-UHFFFAOYSA-N fluoro hypofluorite;silicon Chemical compound [Si].FOF OJCDKHXKHLJDOT-UHFFFAOYSA-N 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 239000005368 silicate glass Substances 0.000 description 10
- 239000000872 buffer Substances 0.000 description 8
- 230000004044 response Effects 0.000 description 8
- 238000005234 chemical deposition Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 101000741396 Chlamydia muridarum (strain MoPn / Nigg) Probable oxidoreductase TC_0900 Proteins 0.000 description 2
- 101000741399 Chlamydia pneumoniae Probable oxidoreductase CPn_0761/CP_1111/CPj0761/CpB0789 Proteins 0.000 description 2
- 101000741400 Chlamydia trachomatis (strain D/UW-3/Cx) Probable oxidoreductase CT_610 Proteins 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 101100218964 Arabidopsis thaliana BON1 gene Proteins 0.000 description 1
- 101100218965 Arabidopsis thaliana BON2 gene Proteins 0.000 description 1
- 108010077333 CAP1-6D Proteins 0.000 description 1
- 101000897856 Homo sapiens Adenylyl cyclase-associated protein 2 Proteins 0.000 description 1
- 101000836079 Homo sapiens Serpin B8 Proteins 0.000 description 1
- 101000798702 Homo sapiens Transmembrane protease serine 4 Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 102100029500 Prostasin Human genes 0.000 description 1
- 102100032471 Transmembrane protease serine 4 Human genes 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 108010031970 prostasin Proteins 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/50—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020220115271A KR20240036792A (ko) | 2022-09-14 | 2022-09-14 | 반도체 메모리 장치 및 이의 제조 방법 |
| KR10-2022-0115271 | 2022-09-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117715411A true CN117715411A (zh) | 2024-03-15 |
Family
ID=90155845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310541788.6A Pending CN117715411A (zh) | 2022-09-14 | 2023-05-15 | 半导体存储器装置及其制造方法 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20240036792A (ko) |
| CN (1) | CN117715411A (ko) |
-
2022
- 2022-09-14 KR KR1020220115271A patent/KR20240036792A/ko unknown
-
2023
- 2023-05-15 CN CN202310541788.6A patent/CN117715411A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20240036792A (ko) | 2024-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |