CN117713746B - Piezoelectric signal conditioning circuit - Google Patents
Piezoelectric signal conditioning circuit Download PDFInfo
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- CN117713746B CN117713746B CN202410162343.1A CN202410162343A CN117713746B CN 117713746 B CN117713746 B CN 117713746B CN 202410162343 A CN202410162343 A CN 202410162343A CN 117713746 B CN117713746 B CN 117713746B
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- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 26
- 238000001914 filtration Methods 0.000 claims abstract description 16
- 238000012545 processing Methods 0.000 claims abstract description 10
- 230000005669 field effect Effects 0.000 claims description 65
- 239000003990 capacitor Substances 0.000 claims description 43
- 230000001629 suppression Effects 0.000 claims description 15
- 230000001052 transient effect Effects 0.000 claims description 12
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/24—Frequency-independent attenuators
- H03H11/245—Frequency-independent attenuators using field-effect transistor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/28—Impedance matching networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017545—Coupling arrangements; Impedance matching circuits
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Abstract
The invention provides a piezoelectric signal conditioning circuit, which belongs to the field of piezoelectric sensors, and comprises a high-frequency signal attenuation circuit module, a frequency-selecting filter and a power supply module, wherein the high-frequency signal attenuation circuit module is used for acquiring an equivalent voltage signal output by a piezoelectric sensor and performing frequency-selecting filter processing on the equivalent voltage signal and an electromagnetic pulse signal coupled with the equivalent voltage signal; the impedance transformation and IEPE interface circuit module is used for performing impedance transformation, signal amplification and gain adjustment on the equivalent voltage signal subjected to frequency selection filtering treatment, and outputting the treated equivalent voltage signal in an IEPE interface form; and the anti-electromagnetic pulse interference circuit module is used for carrying out filtering processing on the received voltage signal. The invention realizes the multi-slave functions of impedance transformation, signal amplification and gain adjustment, high-frequency signal attenuation, electromagnetic pulse interference resistance, IEPE interface provision and the like of the electric charge output by the piezoelectric sensor, and solves the problems that the signal amplification circuit of the traditional piezoelectric sensor has a complex structure and cannot perform frequency adjustment.
Description
Technical Field
The invention belongs to the field of piezoelectric sensors, and particularly relates to a piezoelectric signal conditioning circuit.
Background
The output of the piezoelectric sensor is a charge signal with extremely high impedance, the general output impedance is more than 10 9 Ω, for example, a piezoelectric accelerometer, the output signal is a charge signal, the amplitude of the charge signal is generally proportional to the vibration acceleration value of the measured object, and the frequency and the phase of the charge signal are consistent. Because the output impedance of the piezoelectric sensor is extremely high, and the output signal is a charge signal, the charge signal cannot be directly collected by the signal collecting equipment, and the charge signal can be collected only after impedance transformation and signal amplification are needed. If the vibration acceleration of the measured object is obtained through the vibration acceleration sensor, the conversion of the acceleration charge signal into the acceleration voltage signal, namely the conversion of pC-mV, is needed, but the problems of the functions of impedance conversion, gain adjustment and high-frequency signal attenuation are involved.
Disclosure of Invention
Aiming at the defects in the prior art, the piezoelectric signal conditioning circuit provided by the invention is composed of two field effect transistors and a smaller number of peripheral resistive capacitor parts, so that the functions of impedance transformation, gain adjustment, high-frequency signal attenuation, electromagnetic pulse interference resistance and IEPE standard interface of output signals of a piezoelectric sensor are realized, and the problems that the signal amplifying circuit of the traditional piezoelectric sensor is complex in structure and cannot be used for frequency adjustment are solved.
The technical scheme of the invention is as follows: a piezoelectric signal conditioning circuit comprising:
the high-frequency signal attenuation circuit module is used for acquiring an equivalent voltage signal output by the piezoelectric sensor and performing frequency-selecting filtering processing on the equivalent voltage signal and an electromagnetic pulse signal coupled with the equivalent voltage signal;
The impedance transformation and IEPE interface circuit module is used for carrying out impedance transformation, signal amplification and gain adjustment on the equivalent voltage signal subjected to frequency selection filtering treatment, and outputting the treated equivalent voltage signal to the anti-electromagnetic pulse interference circuit module through an IEPE interface form;
and the anti-electromagnetic pulse interference circuit module is used for carrying out filtering processing on the received voltage signal.
The beneficial effects of the invention are as follows: the invention utilizes an amplifying circuit composed of a field effect tube and fewer peripheral resistor-capacitor parts to realize the functions of impedance transformation, gain adjustment, high-frequency signal attenuation, electromagnetic pulse interference resistance and IEPE standard interface of the output signal of the piezoelectric sensor, solves the problems that the signal amplifying circuit of the piezoelectric sensor has a complex structure and cannot carry out frequency adjustment, and firstly solves the problems that the existing circuit cannot correct and adjust the frequency response of the piezoelectric sensor. Meanwhile, the invention has electromagnetic pulse signal suppression circuit, can meet the use requirement under the complex electromagnetic environment, adopts IEPE output mode for output, and can reduce the output interface of the amplifying circuit by implementation.
Further, the high-frequency signal attenuation circuit module comprises a resistor R1 and a capacitor C2;
one end of a resistor R1 is connected with an external piezoelectric sensor through a coupling capacitor C1 and is used as an input end Vin of a piezoelectric signal conditioning circuit, and the other end of the resistor R1 is respectively connected with one end of a capacitor C2 and an impedance transformation and IEPE interface circuit module; the other end of the capacitor C2 is connected with an impedance transformation and IEPE interface circuit module, and the resistor R1 and the capacitor C2 are a resistor-capacitor network RC of the high-frequency signal attenuation circuit.
The beneficial effects of the above-mentioned further scheme are: the equivalent voltage output by the piezoelectric sensor is coupled in through the coupling capacitor C1, and then the first-order low-pass filter consisting of the resistor R1 and the capacitor C2 performs frequency selection filtering, so that the high-frequency signal attenuation of the piezoelectric sensor is realized, and the frequency response range of the piezoelectric sensor is increased.
Still further, the impedance transformation and IEPE interface circuit module includes a junction field effect transistor Q1, a junction edge gate field effect transistor Q2, a bootstrap resistor R2, a resistor R3, a resistor R4, and a resistor R5;
One end of the bootstrap resistor R2 is respectively connected with the other end of the resistor R1 and the grid electrode of the junction field effect transistor Q1, the source electrode of the junction field effect transistor Q1 is connected with one end of the resistor R3, the drain electrode of the junction field effect transistor Q1 is respectively connected with one end of the resistor R4 and the grid electrode of the junction edge gate field effect transistor Q2, the source electrode of the junction edge gate field effect transistor Q2 is connected with one end of the resistor R5, the drain electrode of the junction edge gate field effect transistor Q2 is respectively connected with the other end of the resistor R4 and the anti-electromagnetic pulse interference circuit module, and the other end of the bootstrap resistor R2 is respectively connected with the other end of the capacitor C2, the other end of the resistor R3 and the other end of the resistor R5 and is grounded.
The beneficial effects of the above-mentioned further scheme are: the invention transmits the equivalent voltage signal filtered by the high-frequency signal attenuation circuit module into a signal amplifying circuit with an IEPE interface, which is composed of a junction field effect transistor Q1 (JFET), a junction edge gate field effect transistor Q2 (MOS transistor) and four peripheral resistors, so as to realize the functions of gain adjustment and impedance transformation.
Still further, the anti-electromagnetic pulse interference circuit module comprises a capacitor C3, a resistor R6 and a transient suppression diode D1;
One end of a resistor R6 is respectively connected with the drain electrode of the junction edge gate field effect transistor Q2 and one end of a capacitor C3, the other end of the resistor R6 is respectively connected with the constant current source power supply end lin and the negative electrode of the transient suppression diode D1, and is used as the output end Vout of the piezoelectric conditioning circuit, and the positive electrode of the transient suppression diode D1 is respectively connected with the other end of the capacitor C3, the other end of the resistor R5, the other end of the resistor R3, the other end of the bootstrap resistor R2 and the other end of the capacitor C2 and is grounded.
The beneficial effects of the above-mentioned further scheme are: the invention utilizes the signal output end formed by the resistor R6, the capacitor C3 and the transient suppression diode D1, namely the electromagnetic pulse interference signal suppression circuit, to realize the electromagnetic pulse interference resistance function of the IEPE circuit.
Still further, the relationship between the RC network of the high-frequency signal attenuation circuit module and the frequency characteristic of the high-frequency signal attenuation circuit is as follows:
Wherein, Representing the cut-off frequency of the high frequency signal attenuation circuit module at-3 dB attenuation.
The beneficial effects of the above-mentioned further scheme are: according to the invention, the equivalent voltage output by the piezoelectric sensor is subjected to frequency selection filtering through the RC network, and the frequency signal of a specific frequency band is attenuated by adjusting the time constant of the RC, so that the attenuation of the high-frequency signal of the piezoelectric sensor is realized, and the frequency response range of the piezoelectric sensor is increased.
Still further, the expression of the amplification factor of the junction field effect transistor Q1 is as follows:
Wherein, Represents the amplification factor of the junction field effect transistor Q1,/>Representing the transconductance of junction field effect transistor Q1.
The beneficial effects of the above-mentioned further scheme are: in the invention, the primary voltage signal amplifying circuit formed by the resistor R3, the resistor R4 and the junction field effect transistor Q1 is used for realizing the primary amplification of the equivalent voltage signal output by the piezoelectric sensor output by the high-frequency signal attenuation circuit module.
Still further, the expression of the amplification factor of the junction edge gate field effect transistor Q2 is as follows:
Wherein, Represents the amplification factor of the junction edge gate field effect transistor Q2,/>Representing the transconductance of the junction gate fet Q2.
The beneficial effects of the above-mentioned further scheme are: in the invention, the secondary voltage signal amplifying circuit formed by the resistor R5 and the junction gate field effect transistor Q2 is used, and the primary voltage signal amplifying circuit and the secondary voltage signal amplifying circuit are in signal connection in a direct coupling mode, so that the equivalent voltage signal output by the piezoelectric sensor is further amplified.
Still further, the expression of the total amplification factor of the piezoelectric signal conditioning circuit is as follows:
Wherein, Indicating the total amplification of the piezoelectric signal conditioning circuit.
The beneficial effects of the above-mentioned further scheme are: in the invention, a primary voltage signal amplifying circuit formed by a resistor R3, a resistor R4 and a junction field effect transistor Q1 is utilized, a secondary voltage signal amplifying circuit formed by a resistor R5 and a junction gate field effect transistor Q2 is utilized, and the primary voltage signal amplifying circuit and the secondary voltage signal amplifying circuit are in signal connection in a direct coupling mode, so that the amplifying function of an equivalent voltage signal output by a piezoelectric sensor is realized.
Drawings
Fig. 1 is a schematic circuit diagram of the present invention.
Fig. 2 is a schematic diagram of a signal processing circuit built in a certain IEPE type piezoelectric vibration acceleration sensor according to this embodiment.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and all the inventions which make use of the inventive concept are protected by the spirit and scope of the present invention as defined and defined in the appended claims to those skilled in the art.
Example 1
As shown in fig. 1, the present invention provides a piezoelectric signal conditioning circuit, comprising:
the high-frequency signal attenuation circuit module is used for acquiring an equivalent voltage signal output by the piezoelectric sensor and performing frequency-selecting filtering processing on the equivalent voltage signal and an electromagnetic pulse signal coupled with the equivalent voltage signal;
The impedance transformation and IEPE interface circuit module is used for carrying out impedance transformation, signal amplification and gain adjustment on the equivalent voltage signal subjected to frequency selection filtering treatment, and outputting the treated equivalent voltage signal to the anti-electromagnetic pulse interference circuit module through an IEPE interface form;
and the anti-electromagnetic pulse interference circuit module is used for carrying out filtering processing on the received voltage signal.
The high-frequency signal attenuation circuit module comprises a resistor R1 and a capacitor C2;
one end of a resistor R1 is connected with an external piezoelectric sensor through a coupling capacitor C1 and is used as an input end Vin of a piezoelectric signal conditioning circuit, and the other end of the resistor R1 is respectively connected with one end of a capacitor C2 and an impedance transformation and IEPE interface circuit module; the other end of the capacitor C2 is connected with an impedance transformation and IEPE interface circuit module, and the resistor R1 and the capacitor C2 are a resistor-capacitor network RC of the high-frequency signal attenuation circuit.
The impedance transformation and IEPE interface circuit module comprises a junction field effect transistor Q1, a junction edge gate field effect transistor Q2, a bootstrap resistor R2, a resistor R3, a resistor R4 and a resistor R5;
One end of the bootstrap resistor R2 is respectively connected with the other end of the resistor R1 and the grid electrode of the junction field effect transistor Q1, the source electrode of the junction field effect transistor Q1 is connected with one end of the resistor R3, the drain electrode of the junction field effect transistor Q1 is respectively connected with one end of the resistor R4 and the grid electrode of the junction edge gate field effect transistor Q2, the source electrode of the junction edge gate field effect transistor Q2 is connected with one end of the resistor R5, the drain electrode of the junction edge gate field effect transistor Q2 is respectively connected with the other end of the resistor R4 and the anti-electromagnetic pulse interference circuit module, and the other end of the bootstrap resistor R2 is respectively connected with the other end of the capacitor C2, the other end of the resistor R3 and the other end of the resistor R5 and is grounded.
The anti-electromagnetic pulse interference circuit module comprises a capacitor C3, a resistor R6 and a transient suppression diode D1;
One end of a resistor R6 is respectively connected with the drain electrode of the junction edge gate field effect transistor Q2 and one end of a capacitor C3, the other end of the resistor R6 is respectively connected with the constant current source power supply end lin and the negative electrode of the transient suppression diode D1, and is used as the output end Vout of the piezoelectric conditioning circuit, and the positive electrode of the transient suppression diode D1 is respectively connected with the other end of the capacitor C3, the other end of the resistor R5, the other end of the resistor R3, the other end of the bootstrap resistor R2 and the other end of the capacitor C2 and is grounded.
In this embodiment, as shown in fig. 1, the output of the piezoelectric sensor is equivalent to a charge generating device in a vibration environmentBecause of the existence of the capacitance of the internal piezoelectric sensitive element and the distributed capacitance of the connecting cable, the output of the piezoelectric sensor can be equivalently used as a voltage generating device, and the output equivalent voltage is/>：/>Wherein/>Representing the internal capacitance of the piezoelectric sensor,/>Representing the distributed capacitance of the connecting cable, the voltage signal has a very high output impedance, typically above 109 Ω. The piezoelectric signal conditioning circuit comprises three functional circuit modules, namely a high-frequency signal attenuation circuit module, an impedance transformation and IEPE interface circuit module and an electromagnetic pulse interference resistance circuit module. The high-frequency signal attenuation circuit module is used for acquiring an equivalent voltage signal output by the piezoelectric sensor and filtering the signal and an electromagnetic pulse signal coupled with the signal; the impedance transformation and IEPE interface circuit module is used for carrying out impedance transformation, signal amplification and gain adjustment on equivalent voltage signals output by the piezoelectric sensor, and outputting the amplified signals in an IEPE interface mode; the anti-electromagnetic pulse interference circuit module is used for carrying out filtering processing on the amplified signals and reducing the influence of external electromagnetic pulse interference signals on the circuit.
In this embodiment, the working principle of the piezoelectric signal conditioning circuit is as follows: the piezoelectric signal conditioning circuit is powered by a constant current source, the equivalent voltage output by the piezoelectric sensor is coupled and input through a capacitor C1, and then a first-order low-pass filter consisting of a resistor R1 and a capacitor C2 is used for frequency selection and filtering, so that the high-frequency signal attenuation of the piezoelectric sensor is realized, and the frequency response range of the piezoelectric sensor is increased. The filtered voltage signal is sent to a signal amplifying circuit with an IEPE interface, which is formed by four peripheral resistors, namely a junction field effect transistor Q1 (JFET), a junction edge gate field effect transistor Q2 (MOS transistor) and resistors R2-R5, so that the functions of gain adjustment and impedance transformation are realized. An electromagnetic pulse interference signal suppression circuit of the signal output end is formed by a resistor R6, a capacitor C3 and a transient suppression diode D1, and the electromagnetic pulse interference resistance function of the IEPE circuit is realized.
In this embodiment, qa in fig. 1 is a charge output of the piezoelectric sensor; ra is the internal resistance of the piezoelectric sensor; ca is the internal capacitance of the piezoelectric sensor; cc is the distributed capacitance of the connecting cable; va is the equivalent voltage output of the piezoelectric sensor; c1 is a coupling capacitor of the signal input; r1 and C2 are RC networks of the high-frequency signal attenuation circuit; r2 is the bootstrap resistance of the field effect transistor Q1; vout is a voltage signal output by the piezoelectric signal conditioning circuit; vout1 is the voltage signal output by the junction field effect transistor Q1.
In this embodiment, as can be seen from the schematic diagram of the piezoelectric signal conditioning circuit in fig. 1, the relation between the frequency characteristic of the high-frequency signal attenuation circuit and RC is shown in (1), namely:
（1）
Wherein, Representing the cut-off frequency of the high frequency signal attenuation circuit module at-3 dB attenuation.
As can be seen from the formula (1), by adjusting the time constant of R1C2, the attenuation of the high-frequency signal can be achieved, and the frequency response capability expansion function of the piezoelectric sensor can be realized.
In this embodiment, according to the schematic diagram of the piezoelectric signal conditioning circuit shown in fig. 1, in combination with the small signal model of the junction field effect transistor amplifying circuit, the transconductance of the field effect transistor Q1 and the input voltage can be expressed by the following relational expression (2), namely:
（2）
Wherein, Representing the equivalent voltage output by the piezoelectric sensor,/>Representing the transconductance of field effect transistor Q1,/>Representing the quiescent operating point voltage of fet Q1.
The relation between the transconductance of the field effect transistor Q1 and the output voltage is shown in (3), namely:
（3）
Wherein, Representing the voltage signal output by the junction field effect transistor Q1.
Amplification factor of field effect transistor Q1The calculation is shown in formula (4), namely:
（4）
Substituting the formulas (2) and (3) into the formula (4) to simplify the formula (5), namely:
（5）
similarly, the amplification factor of the field effect transistor Q2 can be calculated See formula (6), namely:
Wherein, Represents the amplification factor of the junction edge gate field effect transistor Q2,/>Representing the transconductance of the junction gate fet Q2.
Thus, the total amplification factor of the piezoelectric signal conditioning circuitSee formula (7), namely:
（7）
Wherein, Indicating the total amplification of the piezoelectric signal conditioning circuit.
In this embodiment, the piezoelectric signal conditioning circuit input is a sensor based on the piezoelectric principle, or the input signal is an input device expressed in the form of electric charges, for signal conditioning of this type of sensor.
In this embodiment, the method for attenuating the high-frequency signal of the piezoelectric signal conditioning circuit includes: the high-frequency signal amplitude is attenuated by the high-frequency signal attenuation circuit module.
In the embodiment, the piezoelectric signal conditioning circuit is composed of a signal amplifying circuit formed by field effect transistors, and the resistors R2-R5, the junction field effect transistor Q1 and the junction gate field effect transistor Q2 form a signal amplifying circuit and an IEPE interface conversion circuit.
In the embodiment, the value range of the resistors R1, R3-R5 of the piezoelectric signal conditioning circuit is between 10kΩ and 100kΩ, the value range of the resistor R2 is between 10MΩ and 10GΩ, and the value range of the electrical appliance C2 is between 10pF and 1000 pF.
In this embodiment, the major breakthrough of the present invention has two points: the invention solves the problem that the prior circuit can not correct and adjust the frequency response of the piezoelectric sensor, and in the invention, a high-frequency signal attenuation circuit module is arranged in the piezoelectric signal conditioning circuit, and the high-frequency response amplitude of the piezoelectric sensor is attenuated by adjusting the time constant of the high-frequency signal attenuation circuit RC, so that the use frequency range of the sensor can be greatly improved, and the design difficulty of the piezoelectric sensor is reduced. The invention has the advantages that the core device of the piezoelectric signal conditioning circuit is a signal amplifying circuit composed of two field effect transistors of a junction field effect transistor Q1/a junction edge gate field effect transistor Q2, and the functions of impedance transformation, gain adjustment, IEPE output and the like of output signals of the piezoelectric sensor are realized, so that the circuit structure is simple and the reliability is high.
In this embodiment, as shown in fig. 2, the coupling capacitance C1:200nF, capacitance C2:200pF, capacitor C3:1nF, resistance R1:47kΩ, bootstrap resistance R2:1gΩ, resistance R3:5.1kΩ, resistance R4:47kΩ, resistance R5:240 Ω, resistance R6:10 Ω, junction field effect transistor Q1: CS4392, junction gate field effect transistor Q2: ZVN3310F, transient suppression diode D1: SY5643. In this scheme, the frequency response range of the piezoelectric sensor is required to be 5 Hz-12.8 kHz, because the frequency response range of the sensor of the piezoelectric sensor is 5 Hz-10 kHz and exceeds the frequency range of 10kHz, the output sensitivity of the sensor of the piezoelectric sensor is increased and exceeds the sensor index required value, according to the requirement of the invention, the high-frequency signal attenuation-3 dB turning frequency point is 16.93kHz, and after the sensor output signal of the piezoelectric sensor is attenuated at 10kHz, the frequency response of the piezoelectric sensor is enabled to meet the 5 Hz-12.8 kHz index requirement. The original charge sensitivity Sa of the piezoelectric sensor is 4pC/g (pk-pk), and the capacitance Ca of the piezoelectric sensor is about 300pF, so that according to the requirement of the present invention, in the case of selecting a field effect transistor, the output sensitivity Sv (pk-pk) of the piezoelectric sensor after signal conditioning can be calculated according to the formula (7) will be equal to: mV/g has been used essentially in industry for the test requirements for vibration strength.
Those of ordinary skill in the art will recognize that the embodiments described herein are for the purpose of aiding the reader in understanding the principles of the present invention and should be understood that the scope of the invention is not limited to such specific statements and embodiments. Those of ordinary skill in the art can make various other specific modifications and combinations from the teachings of the present disclosure without departing from the spirit thereof, and such modifications and combinations remain within the scope of the present disclosure.
Claims (5)
1. A piezoelectric signal conditioning circuit, comprising:
the high-frequency signal attenuation circuit module is used for acquiring an equivalent voltage signal output by the piezoelectric sensor and performing frequency-selecting filtering processing on the equivalent voltage signal and an electromagnetic pulse signal coupled with the equivalent voltage signal;
The impedance transformation and IEPE interface circuit module is used for carrying out impedance transformation, signal amplification and gain adjustment on the equivalent voltage signal subjected to frequency selection filtering treatment, and outputting the treated equivalent voltage signal to the anti-electromagnetic pulse interference circuit module through an IEPE interface form;
the anti-electromagnetic pulse interference circuit module is used for carrying out filtering processing on the received voltage signals;
the high-frequency signal attenuation circuit module comprises a resistor R1 and a capacitor C2;
One end of a resistor R1 is connected with an external piezoelectric sensor through a coupling capacitor C1 and is used as an input end Vin of a piezoelectric signal conditioning circuit, and the other end of the resistor R1 is respectively connected with one end of a capacitor C2 and an impedance transformation and IEPE interface circuit module; the other end of the capacitor C2 is connected with an impedance transformation and IEPE interface circuit module, and the resistor R1 and the capacitor C2 are a resistor-capacitor network RC of the high-frequency signal attenuation circuit;
The impedance transformation and IEPE interface circuit module comprises a junction field effect transistor Q1, a junction edge gate field effect transistor Q2, a bootstrap resistor R2, a resistor R3, a resistor R4 and a resistor R5;
One end of a bootstrap resistor R2 is respectively connected with the other end of the resistor R1 and the grid electrode of the junction field effect transistor Q1, the source electrode of the junction field effect transistor Q1 is connected with one end of the resistor R3, the drain electrode of the junction field effect transistor Q1 is respectively connected with one end of the resistor R4 and the grid electrode of the junction edge gate field effect transistor Q2, the source electrode of the junction edge gate field effect transistor Q2 is connected with one end of the resistor R5, the drain electrode of the junction edge gate field effect transistor Q2 is respectively connected with the other end of the resistor R4 and the anti-electromagnetic pulse interference circuit module, and the other end of the bootstrap resistor R2 is respectively connected with the other end of the capacitor C2, the other end of the resistor R3 and the other end of the resistor R5 and is grounded;
the anti-electromagnetic pulse interference circuit module comprises a capacitor C3, a resistor R6 and a transient suppression diode D1;
One end of a resistor R6 is respectively connected with the drain electrode of the junction edge gate field effect transistor Q2 and one end of a capacitor C3, the other end of the resistor R6 is respectively connected with the constant current source power supply end lin and the negative electrode of the transient suppression diode D1, and is used as the output end Vout of the piezoelectric conditioning circuit, and the positive electrode of the transient suppression diode D1 is respectively connected with the other end of the capacitor C3, the other end of the resistor R5, the other end of the resistor R3, the other end of the bootstrap resistor R2 and the other end of the capacitor C2 and is grounded.
2. The piezoelectric signal conditioning circuit according to claim 1, wherein the relationship between the RC network of the high frequency signal attenuation circuit module and the frequency characteristic of the high frequency signal attenuation circuit is as follows:
Wherein, Representing the cut-off frequency of the high frequency signal attenuation circuit module at-3 dB attenuation.
3. The piezoelectric signal conditioning circuit according to claim 2, wherein the expression of the amplification factor of the junction field effect transistor Q1 is as follows:
Wherein, Represents the amplification factor of the junction field effect transistor Q1,/>Representing the transconductance of junction field effect transistor Q1.
4. A piezoelectric signal conditioning circuit according to claim 3, characterized in that the expression of the amplification factor of the junction gate fet Q2 is as follows:
Wherein, Represents the amplification factor of the junction edge gate field effect transistor Q2,/>Representing the transconductance of the junction gate fet Q2.
5. The piezoelectric signal conditioning circuit of claim 4, wherein the expression of the total amplification of the piezoelectric signal conditioning circuit is as follows:
Wherein, Indicating the total amplification of the piezoelectric signal conditioning circuit.
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