CN117705310A - Integrated high-sensitivity temperature sensing chip with MOS structure - Google Patents
Integrated high-sensitivity temperature sensing chip with MOS structure Download PDFInfo
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- CN117705310A CN117705310A CN202311630421.8A CN202311630421A CN117705310A CN 117705310 A CN117705310 A CN 117705310A CN 202311630421 A CN202311630421 A CN 202311630421A CN 117705310 A CN117705310 A CN 117705310A
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- 239000000758 substrate Substances 0.000 claims abstract description 12
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- 230000010354 integration Effects 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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Abstract
The invention discloses an integrable high-sensitivity temperature sensing chip with a MOS structure, which aims at the problems of narrow detection range and the like in the prior art. Comprising the following steps: a first MOSFET and a diode; the drain of the first MOSFET is externally connected with a drain bias voltage V D The grid is externally connected with a first grid bias voltage V G 1, a source electrode is used as a signal output end; the anode of the diode is externally connected with positive voltage V PN The cathode is electrically connected with the substrate of the first MOSFET and is used for generating heat-generated carriers on the substrate of the first MOSFET. The circuit has the advantages of simple circuit, high integration level, high response speed, low cost and the like.
Description
Technical Field
The invention relates to an integrable high-sensitivity temperature sensing chip with a MOS structure.
Background
Temperature sensors are a type of device for measuring the temperature of an environment or object, and are widely used in various fields including industry, medical treatment, automobiles, electronic devices, etc. These sensors are based on different technical principles and sensor types to meet the needs of various applications. Paths can be broadly classified into thermistors, thermocouples, infrared sensors, thermosensitive capacitors, surface acoustic wave sensors, optical fiber sensors, MEMS sensors, and semiconductor temperature sensors according to different technologies.
In recent years, semiconductor temperature sensors have been widely studied for their characteristics such as miniaturization, high accuracy, and low power consumption. Semiconductor temperature sensors are a type of device that uses the temperature characteristics of semiconductor materials to make temperature measurements. These sensors are based on the electrical properties of the semiconductor device, whose resistance, capacitance, or voltage characteristics change with temperature. Among them, temperature sensors, which measure temperature characteristics of semiconductor devices such as bipolar transistors (BJTs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), have been most widely studied.
The BJT type temperature sensor utilizes the proportional relation between the base-emitter current and the temperature of the BJT, adopts a series of MOS circuits as a bias circuit and an amplifying circuit to amplify, calibrate, compensate and the like the current which is generated by the BJT and changes along with the temperature, and outputs the current in the temperature sensor. Most of the existing schemes adopt a pair of bipolar transistors (BJT) as reference receptors, and the response of the BJT to temperature is amplified through a plurality of MOSFETs, so that the existing schemes have the defects of relatively narrow detection range, complex circuit, large heat dissipation, relatively slow speed, low integration level, relatively high manufacturing cost and the like. And most of MOS type temperature sensors have lower precision and narrower detection range. Meanwhile, the temperature sensor itself employing only a diode is insufficient in terms of temperature responsiveness and linearity.
Disclosure of Invention
The invention aims to provide an integratable high-sensitivity temperature sensing chip with a MOS structure, so as to solve the problems in the prior art.
The invention relates to an integrable high-sensitivity temperature sensing chip with a MOS structure, which comprises the following components: a first MOSFET and a diode;
the drain of the first MOSFET is externally connected with a drain bias voltage V D The grid is externally connected with a first grid bias voltage V G 1, a source electrode is used as a signal output end; the anode of the diode is externally connected with positive voltage V PN The cathode is electrically connected with the substrate of the first MOSFET and is used for generating heat-generated carriers on the substrate of the first MOSFET.
A second MOSFET is also arranged; the drain electrode of the second MOSFET is in common point with the source electrode of the first MOSFET and then is used as a signal output end, and the grid electrode of the second MOSFET is externally connected with a second grid bias voltage V G 2, the source electrode of the second MOSFET is grounded.
The integrated high-sensitivity temperature sensing chip with the MOS structure has the advantages that the whole circuit is realized by adopting one or two MOSFETs and one diode, the circuit of the MOSFET is a current output type temperature sensor, and charges generated by the thermal effect of the forward bias diode on the temperature are accumulated on the substrate of the MOSFET, so that the potential of the substrate of the MOSFET changes along with the temperature, and the source leakage current of the MOSFET has extremely high change effect along with the temperature, which is called as a temperature control lining bias effect. The circuit using two MOSFETs is based on the circuit, and a MOS ground is connected in series to the source electrode of the MOSFETs to perform voltage negative feedback, so that the circuit can be used as a voltage output type temperature sensor. The chip with the temperature control lining bias effect has the advantages of simple circuit, high integration level, high response speed, low cost and the like.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of an MOS-structured temperature sensor chip capable of integrating high sensitivity according to the present invention.
Fig. 2 is a temperature sensing simulation graph of the structure shown in fig. 1.
Fig. 3 is a schematic diagram of a second embodiment of an MOS-structured temperature sensor chip with integrated high sensitivity according to the present invention.
Fig. 4 is a temperature sensing simulation graph of the structure shown in fig. 3.
Reference numerals:
m1-first MOSFET, M2-second MOSFET, PN-diode.
Detailed Description
Example 1
As shown in fig. 1, an integrable high-sensitivity temperature sensing chip with a MOS structure according to the present invention includes: a first mosfet m1 and a diode PN. The drain external drain bias voltage V of the first MOSFETM1 D The grid is externally connected with a first grid bias voltage V G 1, the source electrode is used as a signal output end. The PN anode of the diode is externally connected with positive voltage V PN The cathode is electrically connected with the substrate of the first MOSFETM1 and is used for generating heat-generated carriers on the substrate of the first MOSFETM 1.
The principle of the integrable high-sensitivity temperature sensing chip with the MOS structure in the invention is that the forward direction of a diode PN is utilizedThe bias thermal effect generates thermally generated carriers in the first mosfet m1 substrate, so that the source-drain current of the first mosfet m1 is temperature responsive. Wherein the current corresponding to the thermally generated carriers is denoted as I T The device in this embodiment is a current output type device, and the source-drain current after temperature response is denoted as I OUT . As shown in FIG. 2, the temperature response of the material has extremely sensitive temperature response characteristics from-40 ℃ to 200 ℃ and good linearity.
Example two
As shown in fig. 3, a second mosfet m2 is also provided on the basis of the first embodiment. The drain electrode of the second MOSFETM2 is in common point with the source electrode of the first MOSFETM1 and then is used as a signal output end, and the grid electrode of the second MOSFETM2 is externally connected with a second grid bias voltage V G 2, the source of the second mosfet m2 is grounded.
The principle of operation is as in embodiment one, also utilizing the forward bias thermal effect of diode PN to generate thermally generated carriers at the first mosfet m1 substrate. The main difference is that the device of this embodiment is a voltage output type device. And the second MOSFETM2 is used as a MOS resistor to perform negative voltage feedback on the source electrode of the first MOSFETM1, and when the temperature rises, the source electrode current of the first MOSFETM1 rises, and the source electrode voltage of the first MOSFETM1 rises along with the resistance value of the second MOSFETM2. The gate-source voltage of the first MOSFETs M1 is reduced, and the source current of the first MOSFETs M1 is reduced properly through negative feedback, so that the voltage output function which is more linear along with the temperature change is realized. As shown in FIG. 4, the temperature response is from-40 ℃ to 200 ℃ and has extremely sensitive temperature response characteristics, and the linearity is good.
The high-sensitivity temperature sensing chip with the MOS structure can be integrated and arrayed. And the temperature sensing chip design compatible with the CMOS technology is realized by utilizing the temperature control lining bias effect. The chip has the advantages of high response speed, simple circuit structure, small occupied area, high integration, high precision and the like, and is particularly suitable for the fields of temperature detection of miniature objects due to the characteristics of high integration and array, such as biomedical treatment and the like.
It will be apparent to those skilled in the art from this disclosure that various other changes and modifications can be made which are within the scope of the invention as defined in the appended claims.
Claims (2)
1. An integrable high-sensitivity temperature sensing chip of a MOS structure, comprising: a first MOSFET (M1) and a diode (PN);
the drain of the first MOSFET (M1) is externally connected with a drain bias voltage V D The grid is externally connected with a first grid bias voltage V G 1, a source electrode is used as a signal output end; the anode of the diode (PN) is externally connected with positive voltage V PN The cathode is electrically connected with the substrate of the first MOSFET (M1) and is used for generating heat-generated carriers on the substrate of the first MOSFET (M1).
2. The integrated high-sensitivity temperature sensor chip of claim 1, further comprising a second MOSFET (M2); the drain electrode of the second MOSFET (M2) is in common point with the source electrode of the first MOSFET (M1) and then is used as a signal output end, and the grid electrode of the second MOSFET (M2) is externally connected with a second grid bias voltage V G 2, the source of the second MOSFET (M2) is grounded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311630421.8A CN117705310A (en) | 2023-11-30 | 2023-11-30 | Integrated high-sensitivity temperature sensing chip with MOS structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311630421.8A CN117705310A (en) | 2023-11-30 | 2023-11-30 | Integrated high-sensitivity temperature sensing chip with MOS structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117705310A true CN117705310A (en) | 2024-03-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311630421.8A Pending CN117705310A (en) | 2023-11-30 | 2023-11-30 | Integrated high-sensitivity temperature sensing chip with MOS structure |
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| Country | Link |
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| CN (1) | CN117705310A (en) |
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2023
- 2023-11-30 CN CN202311630421.8A patent/CN117705310A/en active Pending
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