CN117690774A - ICP device for reducing etching non-uniformity and adjusting method - Google Patents
ICP device for reducing etching non-uniformity and adjusting method Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 79
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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Abstract
The invention provides an ICP device for reducing etching non-uniformity and an adjusting method thereof, wherein a grid with an inclined through hole structure is introduced, and a servo motor for supporting the grid to move up and down is provided, and the effect of adjusting the gas contact flow distribution on the surface of a wafer by controlling the position of the servo motor to change the grid through software is achieved through the combination of the two, so that the etching rate of partial areas is improved or inhibited, and the etching uniformity is improved.
Description
Technical Field
The invention belongs to the field of microelectronic manufacturing and nano processing, and particularly relates to an ICP device for reducing etching non-uniformity and an adjusting method.
Background
In a typical plasma etch process, different combinations of process gases (e.g., cxFy, O 2 Ar, etc.) in a Radio frequency (Radio frequency) environment to form plasma by Radio frequency excitation, and the formed plasma performs physical bombardment and chemical reaction with the surface of the wafer under the action of the electric fields of the upper electrode and the lower electrode of the etching cavity to complete the processing procedures of designing patterns and key processes on the surface of the wafer. Among them, typical etching chambers include both a capacitive Coupling Chamber (CCP) and an inductive coupling chamber (ICP).
In the existing mode, for uniform gas and plasma, as shown in fig. 1-3, an ICP apparatus adds a grid below the plasma generation region, the grid is fixedly connected with a grounded metal wall, and plasma is filtered to reduce etching damage and make plasma distribution on the surface of the wafer more uniform. At present, the components of the grid structure mostly adopt a structure with single-layer or multi-layer vertical through holes, and meanwhile, the effect of uniform gas is achieved. However, in some processes, the reaction in the reaction chamber is performed under a high temperature condition, the wafer is placed on a circular heating platform, the heating platform heats the wafer to a high temperature of hundreds of degrees celsius, but the temperature is limited by the heating platform, the edge of the wafer is rapidly reduced, and obvious gradient changes exist, so that the etching rate of the middle area with higher temperature is higher than that of the edge area with lower temperature under the condition that the reaction gas is uniformly distributed in the etching process, namely the whole etching rate difference of the middle high edge and the lower edge is displayed.
Disclosure of Invention
In order to solve the problems, the invention provides an ICP device for reducing etching non-uniformity and an adjusting method thereof, wherein the position of a grid of an inclined through hole is controlled by a servo motor to influence the flow direction and distribution of gas, thereby affecting the etching uniformity.
The utility model provides a reduce ICP device of etching unevenness, includes casing, grid and mobile module, and wherein, install the grid in the casing inside and divide into the plasma generation district on upper portion and the reaction chamber of lower part with the casing, simultaneously, open on the grid has the slant through-hole, and the grid can follow the casing inner wall and reciprocate under mobile module's drive.
Further, the larger the inclination angle of the inclined through hole is, the shorter the distance between the grid and the wafer to be etched is, and the stronger the inclined diffusivity of the reaction gas after passing through the inclined through hole is.
Further, the side face of the grid is also provided with a metal wheel, and the metal wheel protrudes out of the shell and is connected with the grounded metal wall.
Further, the oblique through holes are uniformly distributed on the grid.
Further, with the starting point of the opening at the upper part of the oblique through hole and the opening at the lower part as the end point, there are two directions of the opening of the oblique through hole, the first: the projection direction of the direction vector from the starting point to the ending point at the bottom of the shell is from the center to the circumference, and the second type is that: the projection direction of the direction vector from the starting point to the ending point on the bottom of the shell is from the circumference to the circle center.
Further, the moving module is a servo motor, a pneumatic valve or a multi-gas-path cylinder.
An adjusting method of an ICP device for reducing etching unevenness is characterized in that an opening at the upper part of an inclined through hole is used as a starting point, an opening at the lower part is used as an ending point, and the opening direction of the inclined through hole is as follows: the projection direction of the direction vector from the starting point to the end point at the bottom of the shell is from the center to the circumference, and then the distance h1 between the lower surface of the grid and the upper surface of the wafer to be etched is adjusted according to the etching rate required by the wafer to be etched; meanwhile, when the gas flow contacting the surface of the wafer becomes uniform flow, the distance between the lower surface of the grid and the upper surface of the wafer to be etched is recorded as a demarcation distance;
when h1 is larger than the demarcation distance, the larger h1 is, the stronger the transverse diffusivity of the reaction gas passing through the inclined through hole is, the more uniformly distributed the flow of the reaction gas on the surface of the wafer to be etched is, and the etching rate of the middle part of the wafer to be etched is larger than that of the edge; when h1 is smaller than the demarcation distance, the larger h1 is, the stronger the oblique diffusivity of the reaction gas passing through the oblique through hole is, the more the flow of the reaction gas is concentrated at the edge of the wafer to be etched, the etching rate of the middle part of the wafer to be etched is reduced along with the increase of h1, and the etching rate of the edge of the wafer to be etched is increased along with the increase of h 1.
Further, in the case where h1 is smaller than the demarcation distance:
when the etching rate required by the wafer to be etched is high in the middle and low in the two sides, shortening the h1 to enable the h1 to be in a first interval, wherein at the moment, the gas flow is low in the middle and high in the two sides, and the area of a middle low-flow gas area is minimum;
when the etching rate required by the wafer to be etched is uniform, increasing the h1 to enable the increased h1 to be in a second interval, wherein the value of the second interval is larger than that of the first interval, at the moment, the gas flow is low in the middle and high at two sides, and the area of a middle low-flow gas area is larger than that of a middle low-flow gas area corresponding to the first interval;
when the etching rate required by the wafer to be etched is low in the middle and high in the two sides, continuously increasing the h1 to enable the increased h1 to be in a third interval, wherein the value of the third interval is larger than that of the second interval, at the moment, the gas flow is low in the middle and high in the two sides, and the area of a middle low-flow gas area is larger than that of a middle low-flow gas area corresponding to the second interval;
in the case of the boundary distance of h 1:
when the etching rate required by the wafer to be etched is high in the middle and low at the two sides, continuously increasing the h1 to enable the increased h1 to be in a fourth interval, wherein the value of the fourth interval is larger than that of the third interval, and at the moment, the gas flow is uniform.
Further, when the required gas flow is low in the middle and high on both sides, the method for calculating the region diameter delta of the gas flow smaller than the set threshold value at the middle of the wafer to be etched is as follows:
Δ=2(d+d1)=2(h+h1)tanθ
wherein d is the projection length of the oblique through holes on the grid on the lower surface of the grid, d1 is the projection length of the air flow direction sprayed from the oblique through holes on the upper surface of the wafer to be etched, h is the height of the grid, h1 is the distance between the lower surface of the grid and the upper surface of the wafer to be etched, and θ is the depression angle of the oblique through holes on the grid.
The beneficial effects are that:
1. the invention provides an ICP device for reducing etching non-uniformity, which is characterized in that a grid with an inclined through hole structure is introduced, and a moving module for supporting the grid to move up and down is provided, so that the effect of adjusting the gas contact flow distribution on the surface of a wafer by controlling the position of the moving module to change the grid through software is achieved, the etching rate of partial areas is improved or inhibited, and the etching uniformity is improved.
2. The invention provides an ICP device for reducing etching unevenness, wherein a metal wheel is further arranged on the side surface of a grid, and the metal wheel protrudes out of a shell and is connected with a grounded metal wall, so that the grid at any position can be ensured to be in a grounded state, and the safety of the ICP device is improved.
3. The invention provides an ICP device for reducing etching non-uniformity, wherein oblique through holes are uniformly distributed on a grid, so that the etching non-uniformity can be further reduced.
4. The invention provides an adjusting method of an ICP device based on reducing etching non-uniformity, which adjusts different working positions of a grid through a servo motor so as to guide the flow direction and distribution of reaction gas, and can obviously change the distribution and flow direction of the reaction gas on the surface of a wafer, thereby achieving the results of optimizing and adjusting the etching rate and reducing the etching non-uniformity.
5. The invention provides an adjusting method of an ICP device based on reduction of etching non-uniformity, a mobile module can be realized by adopting a servo motor, a pneumatic valve or a multi-gas-path cylinder, and the adjusting method is wide in applicability and simple in structure.
6. The invention provides an adjusting method of an ICP device based on reducing etching non-uniformity, which provides a calculating method of the diameter of a region with smaller gas flow in the middle of a wafer to be etched when the required gas flow is low in the middle and high in the two sides, and can provide theoretical support for researching the relation between the etching rate and the contact degree of reaction gas on the surface of the wafer under specific etching system and process conditions.
Drawings
Fig. 1 is a conventional cavity structure of an ICP apparatus;
fig. 2 is a top view of a grid structure in a cavity structure of a conventional ICP apparatus;
fig. 3 is a side view of a grid structure in a cavity structure of a conventional ICP apparatus;
fig. 4 is a schematic diagram of a cavity structure of an ICP apparatus when a grid provided by the present invention is located at a first interval;
FIG. 5 is a top view of a mesh grille provided by the present invention;
FIG. 6 is a side view of a mesh grid provided by the present invention
FIG. 7 is a schematic diagram of the gas flow distribution and etching rate on the wafer surface corresponding to the position of the grid in the first zone;
fig. 8 is a schematic diagram of a cavity structure of an ICP apparatus when the grid provided by the invention is located at a position of the second section;
FIG. 9 is a graph showing the distribution of gas flow and etching rate on the surface of a wafer corresponding to the position of the grid in the second zone;
fig. 10 is a schematic diagram of a cavity structure of an ICP apparatus when the grid provided by the invention is located at a third interval;
FIG. 11 is a schematic diagram of the gas flow distribution and etching rate on the wafer surface corresponding to the position of the grid in the third zone according to the present invention;
fig. 12 is a schematic view of a cavity structure of an ICP apparatus when the grid provided by the invention is located at the fourth interval;
FIG. 13 is a graph showing the distribution of gas flow and etching rate on the wafer surface corresponding to the grid of the present invention at the fourth zone.
Detailed Description
In order to enable those skilled in the art to better understand the present application, the following description will make clear and complete descriptions of the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application.
In the existing scheme, the reactant gas is distributed uniformly in the reaction cavity, so that the etching rate uniformity is greatly influenced. The invention provides an ICP device capable of adjusting an air path, which controls the position of a grid of an inclined through hole through a servo motor to influence the distribution of the air path, thereby influencing the etching uniformity.
Specifically, as shown in fig. 4, an ICP apparatus for reducing etching unevenness includes a housing, a mesh grid and a moving module, wherein the mesh grid installed inside the housing divides the housing into an upper plasma generation area and a lower reaction chamber, and simultaneously, the mesh grid is provided with uniformly distributed oblique through holes, and can move up and down along the inner wall of the housing under the driving of the moving module, further, in order to keep the mesh grid in a grounded state all the time in the process of moving up and down, the side surface of the mesh grid is also provided with a metal wheel, and the metal wheel protrudes out of the housing and is connected with a grounded metal wall; the inclined through holes are used for changing the distribution and flow direction of the reaction gas entering the plasma generation area from the top of the shell, so that the etching rate and the uniformity of the reaction gas when the wafer to be etched positioned at the bottom of the shell is etched are adjusted. Optionally, the moving module is a servo motor, a pneumatic valve or a multi-gas-path cylinder.
When the gas flow contacting the surface of the wafer becomes uniform, the distance between the lower surface of the grid and the upper surface of the wafer to be etched is recorded as the demarcation distance; if the starting point of the opening at the upper part of the inclined through hole is taken as the ending point of the opening at the lower part, the directions of the opening of the inclined through hole are two, and the first is that: the projection direction of the direction vector from the starting point to the ending point at the bottom of the shell is from the center to the circumference, and the second type is that: the projection direction of the direction vector from the starting point to the ending point on the bottom of the shell is from the circumference to the circle center; meanwhile, when the distance h1 between the lower surface of the grid and the upper surface of the wafer to be etched is smaller than the demarcation distance, the larger the inclination angle of the inclined through holes is and the larger the distance h1 between the grid and the wafer to be etched is, the stronger the inclined diffusivity of the reaction gas after passing through the inclined through holes is.
Therefore, the invention aims to guide the distribution of the gas path by introducing the grid of the through hole structure distributed obliquely, and further control the structure of the grid by the servo motor to change the gas distribution on the surface of the wafer; that is, the etching rate and uniformity of the reaction gas during etching the wafer to be etched positioned at the bottom of the housing are related to the direction and the inclination angle of the opening of the inclined through hole and the distance between the grid and the wafer to be etched; in the following, under the condition that the opening direction and the inclination angle of the inclined through hole are determined, taking the opening direction as the center of a circle to point to the circumference as an example, how to adjust the distance between the grid and the wafer to be etched according to the etching rate required by the wafer to be etched is described in detail. As shown in fig. 5 and 6, d is the projection length of the oblique through holes on the grid on the lower surface of the grid, d1 is the projection length of the air flow direction ejected from the oblique through holes on the upper surface of the wafer to be etched, h is the height of the grid, h1 is the distance between the lower surface of the grid and the upper surface of the wafer to be etched, and θ is the depression angle of the oblique through holes on the grid.
When the gas flow contacting the surface of the wafer becomes uniform flow, the distance between the lower surface of the grid and the upper surface of the wafer to be etched is recorded as a demarcation distance;
when h1 is larger than the demarcation distance, the larger h1 is, the stronger the transverse diffusivity of the reaction gas passing through the inclined through hole is, the more uniformly distributed the flow of the reaction gas on the surface of the wafer to be etched is, and the etching rate of the middle part of the wafer to be etched is larger than that of the edge; when h1 is smaller than the demarcation distance, the larger h1 is, the stronger the oblique diffusivity of the reaction gas passing through the oblique through hole is, the more the flow of the reaction gas is concentrated at the edge of the wafer to be etched, the etching rate of the middle part of the wafer to be etched is reduced along with the increase of h1, and the etching rate of the edge of the wafer to be etched is increased along with the increase of h 1.
Specifically, the invention provides a method for adjusting an ICP device based on reducing etching non-uniformity, and under the condition that h1 is smaller than a demarcation distance:
as shown in fig. 7, when the etching rate required for the wafer to be etched is high in the middle and low on both sides, h1 is shortened to enable h1 to be in the first interval, at this time, the gas flow is low in the middle and high on both sides, the area of the gas area with low flow in the middle is minimum, and the position of the grid is shown in fig. 4;
as shown in fig. 9, when the etching rate required by the wafer to be etched is a uniform rate, increasing h1 to make h1 in a second interval, where the value of the second interval is greater than that of the first interval, at this time, the gas flow is middle low and two sides high, and the area of the middle low-flow gas area is greater than that of the middle low-flow gas area corresponding to the first interval, and at this time, the position of the grid is shown in fig. 8, and compared with the grid position in fig. 4, the grid position has been moved up;
as shown in fig. 11, when the etching rate required by the wafer to be etched is low in the middle and high on both sides, continuing to increase the h1, so that the increased h1 is located in a third interval, wherein the value of the third interval is greater than that of the second interval, at this time, the gas flow is low in the middle and high on both sides, and the area of the middle low-flow gas area is greater than that of the middle low-flow gas area corresponding to the second interval, and at this time, the position of the grid is shown in fig. 10, and compared with the grid position in fig. 8, the grid position has been moved upwards;
in the case where h1 is greater than the demarcation distance:
as shown in fig. 13, when the etching rate required for the wafer to be etched is high in the middle and low at both sides, the h1 is continuously increased, so that the increased h1 is located in a fourth interval, where the value of the fourth interval is greater than that of the third interval, and at this time, the gas flow is uniform, and at this time, the position of the grid is shown in fig. 12, and has been shifted upwards compared with the position of the grid in fig. 10.
Therefore, the different working positions of the grid are adjusted through the servo motor, so that the flow direction and the distribution of the reaction gas are guided, the distribution and the flow direction of the reaction gas on the surface of the wafer can be obviously changed, and the results of optimizing and adjusting the etching rate and reducing the etching uniformity are achieved.
When the required gas flow is low in the middle and high on both sides, the method for calculating the region diameter delta of the wafer to be etched, in which the gas flow is smaller than the set threshold, is as follows:
Δ=2(d+d1)=2(h+h1)tanθ
wherein d is the projection length of the oblique through holes on the grid on the lower surface of the grid, d1 is the projection length of the air flow direction sprayed from the oblique through holes on the upper surface of the wafer to be etched, h is the height of the grid, h1 is the distance between the lower surface of the grid and the upper surface of the wafer to be etched, and θ is the depression angle of the oblique through holes on the grid.
It should be noted that, there is a close relationship between the contact degree of the reaction gas on the wafer surface and the etching rate; the gas concentration is an important factor influencing the contact of the reaction gas with the surface of the wafer, and the higher gas concentration can increase the collision frequency and the contact opportunity of gas molecules and the surface of the wafer, so that the reaction rate and the etching rate are improved; the gas flow speed can influence the contact degree of the reaction gas and the surface of the wafer, and the higher gas flow speed can take away reaction products and increase the contact time of gas molecules and the surface of the wafer, so that the etching rate is increased; it can be seen that the etching rate is not only dependent on the contact degree of the reaction gas with the wafer surface, but also is affected by other factors, such as the design of the etching device, the process parameters, the choice of etching substances, etc.; therefore, in practical application, the contact degree of the reaction gas on the surface of the wafer can be adjusted by optimizing the concentration and the flow speed of the reaction gas, and the etching rate is influenced to a certain extent; however, the relationship between the specific etch rate and the degree of surface reactive gas contact is generally complex and systematic, requiring experimentation and investigation under specific etching systems and process conditions, and the conditioning methods provided by the present invention can provide theoretical support and technical support for such experimentation and investigation.
Of course, the present invention is capable of other various embodiments and its several details are capable of modification and variation in light of the present invention by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (9)
1. The ICP device for reducing etching non-uniformity is characterized by comprising a shell, a grid and a moving module, wherein the grid arranged in the shell divides the shell into an upper plasma generation area and a lower reaction cavity, and simultaneously, an inclined through hole is formed in the grid, and the grid can move up and down along the inner wall of the shell under the driving of the moving module.
2. The ICP apparatus for reducing etching unevenness according to claim 1, wherein the larger the inclination angle of the diagonal through-hole and the shorter the distance between the grid and the wafer to be etched, the stronger the diagonal diffusivity of the reaction gas after passing through the diagonal through-hole.
3. An ICP apparatus for reducing etching unevenness according to claim 1 or 2, wherein the side surface of the grid is further provided with a metal wheel, and the metal wheel is connected to a grounded metal wall by protruding outside the housing.
4. An ICP apparatus for reducing etch non-uniformity according to claim 1 or 2, wherein said diagonal through holes are uniformly distributed across the grid.
5. The ICP apparatus for reducing etching unevenness according to claim 1 or 2, wherein there are two directions of opening of the oblique through-hole by starting from an opening at an upper portion of the oblique through-hole and ending at an opening at a lower portion, the first: the projection direction of the direction vector from the starting point to the ending point at the bottom of the shell is from the center to the circumference, and the second type is that: the projection direction of the direction vector from the starting point to the ending point on the bottom of the shell is from the circumference to the circle center.
6. An ICP apparatus for reducing etch non-uniformity according to claim 1 or 2, wherein said moving module is a servo motor, a pneumatic valve, or a multi-air path cylinder.
7. An ICP apparatus adjusting method for reducing etching unevenness according to claim 1, wherein starting points of openings at upper portions of the diagonal through holes and ending points of openings at lower portions are defined, and opening directions of the diagonal through holes are as follows: the projection direction of the direction vector from the starting point to the end point at the bottom of the shell is from the center to the circumference, and then the distance h1 between the lower surface of the grid and the upper surface of the wafer to be etched is adjusted according to the etching rate required by the wafer to be etched; meanwhile, when the gas flow contacting the surface of the wafer becomes uniform flow, the distance between the lower surface of the grid and the upper surface of the wafer to be etched is recorded as a demarcation distance;
when h1 is larger than the demarcation distance, the larger h1 is, the stronger the transverse diffusivity of the reaction gas passing through the inclined through hole is, the more uniformly distributed the flow of the reaction gas on the surface of the wafer to be etched is, and the etching rate of the middle part of the wafer to be etched is larger than that of the edge; when h1 is smaller than the demarcation distance, the larger h1 is, the stronger the oblique diffusivity of the reaction gas passing through the oblique through hole is, the more the flow of the reaction gas is concentrated at the edge of the wafer to be etched, the etching rate of the middle part of the wafer to be etched is reduced along with the increase of h1, and the etching rate of the edge of the wafer to be etched is increased along with the increase of h 1.
8. The adjustment method according to claim 7, characterized in that, in the case where h1 is smaller than the demarcation distance:
when the etching rate required by the wafer to be etched is high in the middle and low in the two sides, shortening the h1 to enable the h1 to be in a first interval, wherein at the moment, the gas flow is low in the middle and high in the two sides, and the area of a middle low-flow gas area is minimum;
when the etching rate required by the wafer to be etched is uniform, increasing the h1 to enable the increased h1 to be in a second interval, wherein the value of the second interval is larger than that of the first interval, at the moment, the gas flow is low in the middle and high at two sides, and the area of a middle low-flow gas area is larger than that of a middle low-flow gas area corresponding to the first interval;
when the etching rate required by the wafer to be etched is low in the middle and high in the two sides, continuously increasing the h1 to enable the increased h1 to be in a third interval, wherein the value of the third interval is larger than that of the second interval, at the moment, the gas flow is low in the middle and high in the two sides, and the area of a middle low-flow gas area is larger than that of a middle low-flow gas area corresponding to the second interval;
in the case where h1 is greater than the demarcation distance:
when the etching rate required by the wafer to be etched is high in the middle and low at the two sides, continuously increasing the h1 to enable the increased h1 to be in a fourth interval, wherein the value of the fourth interval is larger than that of the third interval, and at the moment, the gas flow is uniform.
9. The method for adjusting a wafer as claimed in claim 7 or 8, wherein when the required gas flow is low at the middle and high at the two sides, the method for calculating the diameter delta of the region where the gas flow is smaller than the set threshold value at the middle of the wafer to be etched is as follows:
Δ=2(d+d1)=2(h+h1)tanθ
wherein d is the projection length of the oblique through holes on the grid on the lower surface of the grid, d1 is the projection length of the air flow direction sprayed from the oblique through holes on the upper surface of the wafer to be etched, h is the height of the grid, h1 is the distance between the lower surface of the grid and the upper surface of the wafer to be etched, and θ is the depression angle of the oblique through holes on the grid.
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| CN104103477A (en) * | 2013-04-05 | 2014-10-15 | 朗姆研究公司 | Internal plasma grid for semiconductor fabrication |
| KR20220067267A (en) * | 2020-11-17 | 2022-05-24 | 박흥균 | Grid apparatus having a beam control function in semiconductor processing system |
| CN115863151A (en) * | 2022-12-25 | 2023-03-28 | 北京屹唐半导体科技股份有限公司 | Workpiece processing method, workpiece processing apparatus, and semiconductor device |
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| CN104103477A (en) * | 2013-04-05 | 2014-10-15 | 朗姆研究公司 | Internal plasma grid for semiconductor fabrication |
| KR20220067267A (en) * | 2020-11-17 | 2022-05-24 | 박흥균 | Grid apparatus having a beam control function in semiconductor processing system |
| CN115863151A (en) * | 2022-12-25 | 2023-03-28 | 北京屹唐半导体科技股份有限公司 | Workpiece processing method, workpiece processing apparatus, and semiconductor device |
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