CN213907015U - Reaction gas flow rate control device and plasma processing apparatus - Google Patents
Reaction gas flow rate control device and plasma processing apparatus Download PDFInfo
- Publication number
- CN213907015U CN213907015U CN202023036640.8U CN202023036640U CN213907015U CN 213907015 U CN213907015 U CN 213907015U CN 202023036640 U CN202023036640 U CN 202023036640U CN 213907015 U CN213907015 U CN 213907015U
- Authority
- CN
- China
- Prior art keywords
- hole
- control device
- reaction gas
- flow rate
- gas flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Drying Of Semiconductors (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
The utility model discloses a reaction gas flow control device and plasma processing apparatus, reaction gas flow control device includes: a first air intake comprising at least one first through hole; the gas passage is formed in the first gas inlet piece and is used for introducing the reaction gas; the reaction gas flows through the gas passage and flows out of the first through hole; at least one adjusting piece, the adjusting piece is used for adjusting the relative position of the corresponding first through hole, and therefore the flow of the reaction gas at the corresponding first through hole is adjusted. The utility model discloses can make the gaseous flow of reaction who lets in plasma processing apparatus have the controllability, improve the sculpture homogeneity of wafer.
Description
Technical Field
The utility model relates to a semiconductor process equipment technical field, concretely relates to reaction gas flow control device and plasma processing apparatus.
Background
In the prior art, a plasma processing apparatus uses a gas delivery system to deliver a reactive gas into a vacuum reaction chamber of the plasma processing apparatus, and a radio frequency power source and a coil are used to generate plasma, thereby etching a wafer. As shown in fig. 1, the top and the side wall of the reaction chamber 1 of the plasma processing apparatus are provided with openings 11, most of the reaction gas enters the reaction chamber 1 through the top opening 11, and a small part of the reaction gas enters the reaction chamber 1 through the side wall opening 11. Nozzle 6 is installed to open-top 11, and present reactant gas is through the flange 7 direct entering nozzle 6 of being connected with nozzle 6, and 6 bottoms of nozzle are provided with a plurality of through-holes, and a plurality of through-holes are the circumference and distribute in 6 bottoms of nozzle, and reactant gas flows into reaction chamber 1 through a plurality of through-holes. The inlet air flow at the nozzle 6 and at the side wall opening 11 is currently not adjustable.
With the development of the etching process, the critical dimension gradually becomes smaller, the requirement on the side to side index of the wafer etching rate (i.e. the uniformity of etching on the wafer) becomes higher and higher, the acceptable range of the difference of the etching uniformity is from 1% to 2% to 0.5% from the beginning, and the requirement of being less than 0.5% is even required at present.
In response to this requirement, it is highly desirable to improve the gas inlet structure at the top opening and the sidewall opening to adjust the flow rate of the reaction gas introduced into the reaction chamber.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a reaction gas flow control device and plasma processing apparatus to the flow that makes the reaction gas who lets in has the controllability, improves the sculpture homogeneity of wafer.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
a reactive gas flow control apparatus for a plasma processing apparatus, comprising:
a first air intake comprising at least one first through hole;
the gas passage is formed in the first gas inlet piece and is used for introducing the reaction gas; the reaction gas flows through the gas passage and flows out of the first through hole;
at least one adjusting piece, the adjusting piece is used for adjusting the relative position of the corresponding first through hole, and therefore the flow of the reaction gas at the corresponding first through hole is adjusted.
Further, in the above reaction gas flow rate control device, the first gas inlet has a first groove, and the first through hole is provided at a bottom of the first groove.
Further, in the reaction gas flow rate control device, a second gas inlet piece is further included, the second gas inlet piece is mounted on the first gas inlet piece, the second gas inlet piece includes at least one first mounting hole which is through, each first mounting hole is arranged opposite to one first through hole, and each adjusting piece is mounted in one first mounting hole; a first cavity is formed between the first groove and the second air inlet piece, and the air passage is formed by the first cavity.
Further, in the above reaction gas flow rate control device, the first gas inlet includes a first cylindrical structure having the first groove and a limit ring located at a top of the first cylindrical structure, the limit ring is connected to the first cylindrical structure, the first cylindrical structure is configured to be installed in an opening of the plasma processing apparatus, and the limit ring cannot pass through the opening.
Further, in the reaction gas flow rate control device, the gas inlet of the gas passage is formed by a plurality of second through holes formed in the side wall of the retainer ring.
Further, in the above reaction gas flow control device, the second air inlet member includes a first insert block located in the first groove and a first stopper located outside the first groove, one end of the first insert block is connected to the first stopper, the other end is not in contact with the bottom of the first groove, and the first mounting hole penetrates through the first stopper and the first insert block.
Further, in the above reaction gas flow rate control device, a second air inlet member is further included, the second air inlet member has a second groove, the bottom of the second groove is provided with at least one second mounting hole, the first air inlet member is mounted on the second air inlet member, each second mounting hole is arranged opposite to one first through hole, and each adjusting member is mounted in one second mounting hole; a second cavity is formed between the second groove and the first air inlet, and the air passage is formed by the second cavity.
Further, in the above-described reaction gas flow rate control device, the second gas inlet may include a second cylindrical structure having the second groove, the second cylindrical structure being adapted to be fitted into the opening of the plasma processing apparatus.
Further, in the above reaction gas flow rate control device, the first gas inlet includes a second insertion block located in the second groove and a second limiting block located outside the second groove, one end of the second insertion block is connected to the second limiting block, and the other end of the second insertion block is not in contact with the bottom of the second groove; the first through hole penetrates through the second inserting block and the second limiting block.
Further, in the above reaction gas flow rate control device, the adjusting member includes a driving module and an adjusting rod connected to each other, and the driving module is configured to drive the adjusting rod to move toward or away from the corresponding first through hole.
Further, in the above reaction gas flow rate control device, the end of the adjusting rod may at least partially cover the first through hole, and the driving module drives the adjusting rod to move so that the end of the adjusting rod is close to or away from the corresponding first through hole, so as to adjust the flow rate of the reaction gas at the corresponding first through hole.
Further, in the above reaction gas flow rate control device, the adjusting rod has an adjusting section at the end thereof, the adjusting section can be inserted into the first through hole, and the driving module drives the adjusting rod to move so that the adjusting section is inserted into or away from the corresponding first through hole, so as to adjust the flow rate of the reaction gas at the corresponding first through hole.
Further, in the above reaction gas flow control device, the area of the cross section of the adjusting section gradually decreases along the direction toward the first through hole, and the driving module drives the adjusting rod to move so that the cross sections of different areas in the adjusting section are coplanar with the gas inflow end of the first through hole, so as to adjust the flow rate of the reaction gas at the corresponding first through hole.
Further, in the above reaction gas flow rate control device, the number of the adjusting members is plural, and at any time, each of the adjusting members may adjust the relative position with respect to the corresponding first through hole synchronously or asynchronously, thereby adjusting the flow rate distribution of the reaction gas at the first through hole.
A plasma processing apparatus, comprising: a reaction chamber, wherein the top and/or the side wall of the reaction chamber is provided with an opening, and the opening is provided with a reaction gas flow control device as described in any one of the above.
Compared with the prior art, the utility model discloses technical scheme has following beneficial effect:
the utility model provides a reaction gas flow control device flows through gas passage at reaction gas, follows when first through-hole flows out, can utilize according to actual need the regulating part changes and corresponds the relative position of first through-hole makes first through-hole can be in the open mode, closed condition or have different flow area's state, thereby adjusts first through-hole department reaction gas's flow, and then improves the sculpture homogeneity of wafer.
The utility model provides a plasma processing device owing to have foretell reaction gas flow control device, consequently also possesses the same beneficial effect.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic diagram of a prior art plasma processing apparatus;
fig. 2 is a schematic structural diagram of a plasma processing apparatus according to an embodiment of the present invention;
fig. 3 is a schematic structural view of a reaction gas flow rate control device according to a first embodiment of the present invention;
fig. 4 is a schematic structural diagram of a reaction gas flow rate control device according to a second embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings 2 to 4 and the detailed description thereof. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. To make the objects, features and advantages of the present invention more comprehensible, please refer to the attached drawings. It should be understood that the structure, ratio, size and the like shown in the drawings attached to the present specification are only used for matching with the content disclosed in the specification, so as to be known and read by those skilled in the art, and are not used for limiting the limitation of the implementation of the present invention, so that the present invention does not have the essential significance in the technology, and any modification of the structure, change of the ratio relationship or adjustment of the size should still fall within the scope of the technical content disclosed in the present invention without affecting the function and the achievable purpose of the present invention.
FIG. 2 shows a schematic diagram of a plasma processing apparatus, comprising: the wafer processing device comprises a reaction cavity 1, wherein the reaction cavity 1 is a vacuum reaction cavity, a base is arranged at the downstream position of the vacuum reaction cavity, an electrostatic chuck 2 is arranged on the base, and an electrostatic electrode is arranged inside the electrostatic chuck 2 and used for generating electrostatic suction force so as to realize the support and fixation of a wafer to be processed in the process. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, radicals and the like, and the active particles can perform various physical and chemical reactions with the surface of the wafer to be processed, so that the appearance of the surface of the wafer is changed, and the etching process is completed. A bias radio frequency power source applies bias radio frequency voltage to the base through a radio frequency matching network and is used for controlling the bombardment direction of charged particles in the plasma; an exhaust pump is arranged below the vacuum reaction cavity and used for exhausting reaction byproducts out of the vacuum reaction cavity and maintaining the vacuum environment of the reaction cavity; an insulating window 3 installed at the top of the reaction chamber 1; and the coil 4 is arranged on the insulating window 3, is externally connected with a radio frequency power source and then generates a high-frequency alternating magnetic field for ionizing the reaction gas connected into the reaction cavity so as to generate plasma.
The insulating window 3 is provided with an opening 11, and the side wall of the reaction chamber is also provided with a plurality of openings 11. The utility model provides a reaction gas flow control device 5 can set up in these openings 11 for adjust the etching homogeneity of wafer to the reaction gas's that lets in flow.
Fig. 3 shows a reaction gas flow rate control device 5 according to a first embodiment of the present invention, and in the structure shown in the drawing, the reaction gas flow rate control device 5 includes: a first air intake 51 comprising at least one first through hole 511; a gas passage formed in the first gas inlet 51 for introducing the reaction gas, wherein the reaction gas flows through the gas passage and flows out of the first through hole 511 into the reaction chamber 1; at least one adjusting member 52, wherein the adjusting member 52 is used for adjusting the relative position with the corresponding first through hole 511, thereby adjusting the flow rate of the reaction gas at the corresponding first through hole 511. It is understood that the number of the adjusting members 52 may be less than or equal to the number of the first through holes 511, that is, the flow rate of each first through hole 511 may be adjusted, or the flow rate of a plurality of first through holes 511 may be adjusted, which is not limited by the present invention.
After the reaction gas is introduced into the gas passage, the flow rate of the reaction gas in the first through hole 511 can be changed by changing the relative position between the adjusting piece 52 and the corresponding first through hole 511; the reaction gas can be adjusted in real time according to the etching state of the wafer to be processed, so that the etching uniformity of the etched wafer to be processed is improved.
Specifically, the first air inlet 51 has a first groove, and the first through hole 511 is disposed at the bottom of the first groove. The reactant gas flow control device 5 further comprises a second gas inlet 53, the second gas inlet 53 is mounted on the first gas inlet 51, the second gas inlet 53 comprises at least one through first mounting hole 531a, each first mounting hole 531a is arranged opposite to one first through hole 511, and each adjusting member 52 is mounted in one first mounting hole 531 a; a first cavity a is formed between the first groove and the second air inlet 53 (the second air inlet 53 closes the upper end of the first groove), and the gas passage is formed by the first cavity a.
In this embodiment, the first air inlet 51 comprises a first cylindrical structure 512a having the first groove and a limiting ring 513a located at the top of the first cylindrical structure, the limiting ring 513a is connected with the first cylindrical structure 512a, the first cylindrical structure 512a is used for being installed in the opening 11 of the plasma processing apparatus, and the limiting ring 513a cannot pass through the opening 11. Preferably, the side wall of the limiting ring 513a is provided with a plurality of second through holes 513a1 as gas inlets of the gas passage, and the gas transmission system introduces the reaction gas into the gas passage through the gas inlets. In other embodiments, the air inlet may also be disposed on the second air inlet 53, which is not limited by the present invention.
The second air intake member 53 includes a first insertion block 532a located in the first groove and a first stopper 533a located outside the first groove, one end of the first insertion block 532a is connected to the first stopper 533a, the other end is not in contact with the bottom of the first groove, and the first mounting hole 531a penetrates through the first stopper 533a and the first insertion block 532 a. The distance between the other end of the first insertion block 532a and the bottom of the first groove generally cannot be too small, and can be set according to practical situations.
In this embodiment, the adjusting member 52 includes a driving module 521 and an adjusting rod 522 connected to each other, and the driving module 521 is configured to drive the adjusting rod 522 to move toward or away from the corresponding first through hole 511, so as to change a relative position of the adjusting rod 522 and the corresponding first through hole 511, thereby adjusting a flow rate of the reaction gas at the corresponding first through hole 511.
In one implementation, the end of the adjusting rod 522 may at least partially cover the first through hole 511 when approaching the first through hole 511, and the driving module 521 drives the adjusting rod 522 to move so that the end of the end approaches or moves away from the corresponding first through hole 511, for one of the first through holes 511, when the adjusting rod 522 approaches the first through hole 511, the first through hole 511 is in a minimum flow state, and when the adjusting rod 522 moves away from the first through hole 511, the first through hole 511 is in a maximum flow state, so as to adjust the flow rate of the reaction gas at the corresponding first through hole 511. That is, when the distal end of the adjustment rod 522 is close to the first through hole 511, the first through hole 511 is at least partially covered, the flow rate of the reaction gas in the first through hole 511 is changed, the flow rate is reduced, or the first through hole 511 is completely closed, and when the distal end of the adjustment rod 522 is far from the first through hole 511, the flow rate in the first through hole 511 is restored, thereby achieving the purpose of adjusting the gas flow rate. Specifically, for example, there are 10 first through holes 511 and adjusting rods 522 corresponding thereto, and 5 of the adjusting rods 522 are driven to make 5 of the first through holes 511 corresponding thereto in the minimum flow state to reduce the flow rate of the reaction gas, and in order to further reduce the flow rate of the reaction gas, more adjusting rods 522 may be driven, for example, 8 of the adjusting rods 522 are driven to make the first through holes 511 corresponding thereto in the minimum flow state; here, the number of the first through holes 511 is merely an example, and the number is not particularly limited.
In another implementation manner, the end of the adjusting rod 522 has an adjusting section that can be inserted into the first through hole 511, and the driving module 521 drives the adjusting rod 522 to move so that the adjusting section is inserted into or away from the corresponding first through hole 511, so as to adjust the flow rate of the reaction gas at the corresponding first through hole 511. That is, the end of the adjusting rod 522 is inserted into or away from the first through hole 511, so that the first through hole 511 is in a closed state or an open state, thereby achieving the purpose of adjusting the gas flow. The specific adjustment method is similar to the foregoing implementation method, and is not described herein again.
In a further implementation, the area of the cross section of the adjusting section is gradually reduced in a direction toward the first through hole 511, and the driving module 521 drives the adjusting rod 522 to move so that the cross section of different areas in the adjusting section is coplanar with the gas inflow end of the first through hole 511, so as to adjust the flow rate of the reaction gas at the corresponding first through hole 511. That is, by making the cross-sections of different areas coplanar with the gas inflow end of the first through-hole 511, the first through-hole 511 can have different flow areas, thereby achieving the purpose of gas flow rate adjustment. Further, for one of the first through holes 511, as the adjusting rod 522 is gradually inserted into the first through hole 511, the flow rate of the reaction gas at the first through hole 511 is gradually reduced, so that the fine adjustment of the flow rate of the reaction gas at the first through hole 511 can be realized. The specific adjustment manner may be similar to the foregoing one, and is not described herein again. Optionally, other implementation manners may also be adopted for the specific adjustment manner, for example: all the adjusting rods 522 are operated, and the flow rate is adjusted by simultaneously adjusting the size of the area of the adjusting section of each adjusting rod 522 coplanar with the first through hole 511.
The driving device 521 can be an air cylinder, an electromagnetic valve, a piezoelectric actuator, a stepping motor, etc., and can be selected according to actual needs.
Preferably, the number of the adjusting members 52 is plural, so that each of the adjusting members 52 can synchronously or asynchronously adjust the relative position with respect to the corresponding first through hole 511 at any time, thereby adjusting the flow distribution of the reaction gas at the first through hole 511. Specifically, during the etching process, synchronous adjustment or asynchronous adjustment can be selected according to the etching condition of the wafer to be processed. When the etching conditions of different positions of the wafer to be processed are not consistent, the relative positions of different adjusting pieces 52 and the corresponding first through holes 511 can be made different through asynchronous adjustment, so that the flow rates of the reaction gases at the first through holes 511 at different positions are different, that is, the flow rates of the reaction gases introduced into the reaction cavity are distributed differently, and the etching uniformity is improved.
The first air inlet 51 and the second air inlet 52 may be sealed by a sealing member, and the second air inlet 52 and the adjusting rod 522 may be sealed by a sealing member.
Fig. 4 shows a reaction gas flow rate control device according to a second embodiment of the present invention, and in the structure shown in the drawing, the reaction gas flow rate control device 5 includes: a first air intake 51 comprising at least one first through hole 511; a gas passage formed in the first gas inlet 51 for introducing the reaction gas, wherein the reaction gas flows through the gas passage and flows out of the first through hole 511 into the reaction chamber 1; at least one adjusting member 52, wherein the adjusting member 52 is used for adjusting the relative position with the corresponding first through hole 511, thereby adjusting the flow rate of the reaction gas at the corresponding first through hole 511. After the reaction gas is introduced into the gas passage, the flow rate of the reaction gas in the first through hole 511 can be changed by changing the relative position between the adjusting piece 52 and the corresponding first through hole 511; the reaction gas can be adjusted in real time according to the etching state of the wafer to be processed, so that the etching uniformity of the etched wafer to be processed is improved.
By way of example, only one adjusting member 52 is shown in fig. 4, and it is understood that the number of the adjusting members 52 may be multiple in the structure shown in the figure, which is not limited by the present invention.
The reaction gas flow control device 5 further comprises a second air inlet 53 having a second groove, at least one second mounting hole 531b is formed at the bottom of the second groove, the first air inlet 51 is mounted on the second air inlet 53, each second mounting hole 531b is arranged opposite to one first through hole 511, and each adjusting member 52 is mounted in one second mounting hole 531 b; a second cavity B is formed between the second groove and the first air inlet 51 (the first air inlet 51 closes the upper end of the second groove), and the gas passage is formed by the second cavity B.
In this embodiment, the second air inlet 53 includes a second cylindrical structure 532b having the second groove, and the second cylindrical structure 532b is configured to be mounted in the opening of the plasma processing apparatus. For example, the sidewall of the second cylindrical structure 532b is opened with a third through hole 532b1 as an air inlet of the air passage, in other embodiments, the air inlet may also be disposed at the bottom of the second cylindrical structure 532b1, which is not limited by the present invention.
The first air inlet part 51 comprises a second inserting block 512b positioned in the second groove and a second limiting block 513b positioned outside the second groove, one end of the second inserting block 512b is connected with the second limiting block 513b, and the other end of the second inserting block 512b is not contacted with the bottom of the second groove; the first through hole 511 penetrates the second insertion block 512b and the second stopper 513 b.
The above two embodiments are described in a related manner, and the same and similar parts of the second embodiment as those of the first embodiment can be referred to in the related description of the first embodiment, which is not repeated herein.
Based on the same inventive concept, the utility model also provides a plasma processing device, including: a reaction chamber, wherein the top and/or the side wall of the reaction chamber is provided with an opening, and the opening is provided with a reaction gas flow control device as described above.
As shown in FIG. 2, the plasma processing apparatus has a reaction chamber with an opening 11 at the top and a plurality of openings 11 at the side wall, wherein the top opening 11 is provided with a reaction gas flow rate control means as shown in FIG. 3, and the side wall opening 11 is provided with a reaction gas flow rate control means as shown in FIG. 4. It will be appreciated that in other embodiments the top opening 11 may be provided with a reactant gas flow control device as shown in figure 4 and the side wall opening 11 may be provided with a reactant gas flow control device as shown in figure 3.
Through setting up at open-top 11 reaction gas flow control device can adjust the edge-to-edge etching symmetry of pending wafer in each direction, through setting up at lateral wall opening 11 reaction gas flow control device can adjust the etching symmetry of pending wafer in the side corresponding direction. For example, if all the first through holes 511 in the top reaction gas flow control device are in an open state, and the side to side index of the wafer to be processed is higher than the left by 0.5%, the relative position of the right adjusting rod and the corresponding first through hole 511 can be adjusted to reduce the flow of the right reaction gas, so that the left and right sides are etched uniformly. Meanwhile, the adjustment can also be carried out through the reaction gas flow control device on the right side wall. The reactive gas flow control means of the top and side walls may be adjusted individually or simultaneously.
By the above, the utility model provides an adjustable plasma processing apparatus of reaction gas flow control device is at the reaction gas flow in different position to adjust the side to side index of pending wafer etching rate, improve the etching homogeneity of wafer.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or field device that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or field device. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or field device that comprises the element.
While the present invention has been described in detail with reference to the preferred embodiments thereof, it should be understood that the above description should not be taken as limiting the present invention. Numerous modifications and alterations to the present invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (15)
1. A reaction gas flow rate control device for a plasma processing apparatus, characterized in that: the method comprises the following steps:
a first air intake comprising at least one first through hole;
the gas passage is formed in the first gas inlet piece and is used for introducing the reaction gas; the reaction gas flows through the gas passage and flows out of the first through hole;
at least one adjusting piece, the adjusting piece is used for adjusting the relative position of the corresponding first through hole, and therefore the flow of the reaction gas at the corresponding first through hole is adjusted.
2. The reaction gas flow rate control device according to claim 1, wherein the first gas inlet has a first groove, and the first through hole is provided at a bottom of the first groove.
3. The reactant gas flow control device of claim 2, further comprising a second gas inlet mounted to said first gas inlet, said second gas inlet including at least one first mounting hole therethrough, each of said first mounting holes being disposed opposite one of said first through holes, each of said tuning elements being mounted in one of said first mounting holes; a first cavity is formed between the first groove and the second air inlet piece, and the air passage is formed by the first cavity.
4. The reactant gas flow control device of claim 2 or 3, wherein said first gas inlet includes a first cylindrical structure having said first recess and a retaining ring at a top of said first cylindrical structure, said retaining ring being coupled to said first cylindrical structure, said first cylindrical structure being adapted to fit within an opening of said plasma processing apparatus, said retaining ring being unable to pass through said opening.
5. The reaction gas flow rate control device according to claim 4, wherein the gas inlet of the gas passage is formed by a plurality of second through holes formed in a side wall of the retainer ring.
6. The reaction gas flow rate control device according to claim 3, wherein the second gas inlet member includes a first stopper located inside the first groove and a first stopper located outside the first groove, one end of the first stopper is connected to one end of the first gas inlet member, the other end of the first gas inlet member is not in contact with the bottom of the first groove, and the first mounting hole penetrates the first stopper and the first stopper.
7. The reactant gas flow control device of claim 1, further comprising a second gas inlet having a second recess, said second recess having at least one second mounting hole formed in a bottom portion thereof, said first gas inlet being mounted to said second gas inlet, each of said second mounting holes being disposed opposite to one of said first through holes, each of said regulating members being mounted to one of said second mounting holes; a second cavity is formed between the second groove and the first air inlet, and the air passage is formed by the second cavity.
8. The reactant gas flow control device of claim 7, wherein said second gas inlet includes a second cylindrical structure having said second recess, said second cylindrical structure being adapted to fit within an opening of said plasma processing device.
9. The reactant gas flow control apparatus according to claim 7 or 8, wherein the first gas inlet member includes a second insert block located inside the second groove and a second stopper located outside the second groove, one end of the second insert block is connected to the second stopper, and the other end is not in contact with the bottom of the second groove; the first through hole penetrates through the second inserting block and the second limiting block.
10. The reaction gas flow rate control device according to claim 1, wherein the adjusting member includes a driving module and an adjusting rod connected to each other, the driving module being configured to drive the adjusting rod to move toward or away from the corresponding first through hole.
11. The reactant gas flow control device according to claim 10, wherein an end of a tip of the adjustment rod at least partially covers the first through hole, and the driving module drives the adjustment rod to move the end of the tip to be close to or far from the corresponding first through hole to adjust the flow rate of the reactant gas at the corresponding first through hole.
12. The reactant gas flow control device according to claim 10, wherein the adjusting rod has an adjusting section at a distal end thereof to be inserted into the first through hole, and the driving module drives the adjusting rod to move the adjusting section into or away from the corresponding first through hole to adjust the flow rate of the reactant gas at the corresponding first through hole.
13. The reaction gas flow rate control device of claim 12, wherein the area of the cross-section of the regulating section is gradually decreased in a direction toward the first through-hole, and the driving module drives the regulating rod to move such that the cross-sections of different areas in the regulating section are coplanar with the gas inflow end of the first through-hole to regulate the flow rate of the reaction gas at the corresponding first through-hole.
14. The reaction gas flow rate control device according to claim 1, wherein the regulating members are provided in plural numbers, and each of the regulating members is capable of synchronously or asynchronously regulating a relative position to the corresponding first through hole at any one time, thereby regulating the flow rate distribution of the reaction gas at the first through hole.
15. A plasma processing apparatus, comprising: a reaction chamber having an opening in the top and/or side walls thereof, said opening being provided with a reactant gas flow control device according to any one of claims 1 to 14.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023036640.8U CN213907015U (en) | 2020-12-16 | 2020-12-16 | Reaction gas flow rate control device and plasma processing apparatus |
| TW110212734U TWM628438U (en) | 2020-12-16 | 2021-10-29 | Reactive gas flow control device and plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023036640.8U CN213907015U (en) | 2020-12-16 | 2020-12-16 | Reaction gas flow rate control device and plasma processing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213907015U true CN213907015U (en) | 2021-08-06 |
Family
ID=77104424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202023036640.8U Active CN213907015U (en) | 2020-12-16 | 2020-12-16 | Reaction gas flow rate control device and plasma processing apparatus |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN213907015U (en) |
| TW (1) | TWM628438U (en) |
-
2020
- 2020-12-16 CN CN202023036640.8U patent/CN213907015U/en active Active
-
2021
- 2021-10-29 TW TW110212734U patent/TWM628438U/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TWM628438U (en) | 2022-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100371491C (en) | Pulsed plasma processing method and apparatus | |
| JP5704577B2 (en) | Plasma processing apparatus and method for processing object to be processed | |
| US20130228284A1 (en) | Hollow cathode device and method for using the device to control the uniformity of a plasma process | |
| US20090084987A1 (en) | Charge neutralization in a plasma processing apparatus | |
| EP2955741A1 (en) | Method to improve plasma etch uniformity | |
| GB2368723A (en) | Electro-static chucking (ESC) mechanism | |
| US20090181526A1 (en) | Plasma Doping Method and Apparatus | |
| KR20140099896A (en) | Pressure control valve assembly of plasma processing chamber and rapid alternating process | |
| JP4043089B2 (en) | Plasma processing equipment | |
| US20230139431A1 (en) | Tuneable uniformity control utilizing rotational magnetic housing | |
| CN213907015U (en) | Reaction gas flow rate control device and plasma processing apparatus | |
| US7115520B2 (en) | Method and apparatus for process control in time division multiplexed (TDM) etch process | |
| US6501082B1 (en) | Plasma deposition apparatus and method with controller | |
| CN114121582A (en) | Plasma processing apparatus and method of operating the same | |
| JP4405495B2 (en) | Plasma processing equipment | |
| US7033514B2 (en) | Method and apparatus for micromachining using a magnetic field and plasma etching | |
| JP2007059944A (en) | Plasma treatment apparatus | |
| CN111383883B (en) | Super-large area scanning type reactive ion etching machine and etching method | |
| CN100382249C (en) | A method and apparatus for process control in time division multiplexed TDM etch processes | |
| KR20090024867A (en) | Echter using plasm | |
| CN213026047U (en) | Gas distribution system and semiconductor processing device | |
| JP4454034B2 (en) | Plasma processing equipment | |
| TW202336809A (en) | Plasma chamber with a multiphase rotating gas cross-flow and peripheral conductance control rings | |
| JP7102252B2 (en) | Plasma processing equipment | |
| JP2022114542A (en) | Vacuum processing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |