CN213026047U

CN213026047U - Gas distribution system and semiconductor processing device

Info

Publication number: CN213026047U
Application number: CN202022564479.5U
Authority: CN
Inventors: 尹志尧; 连增迪
Original assignee: Advanced Micro Fabrication Equipment Inc Shanghai
Current assignee: Advanced Micro Fabrication Equipment Inc Shanghai; Advanced Micro Fabrication Equipment Inc
Priority date: 2020-11-09
Filing date: 2020-11-09
Publication date: 2021-04-20
Anticipated expiration: 2030-11-09
Also published as: TWM630906U

Abstract

The utility model provides a gas distribution system and semiconductor processing apparatus, include: the input end of the main trunk of the manifold receives the processing gas, and the output ends of a plurality of branches of the manifold are communicated with the corresponding reaction cavities; the air pressure adjusting component is positioned on the main trunk; and the first air inlet valve, the mass flow controller and the second air inlet valve are positioned on each branch and sequentially connected, wherein the flow of the processing gas on each branch is less than or equal to 2000sccm, and the plurality of branches of the manifold can share one air pressure adjusting assembly on the main trunk by limiting the flow in the pipeline, so that the flow of the processing gas can be stably controlled by the mass flow controller when the pressure of one branch is changed, the etching uniformity of the semiconductor processing device is further ensured, the manufacturing cost of equipment can be remarkably reduced, and the cost can be further reduced along with the increase of reaction cavities.

Description

Gas distribution system and semiconductor processing device

Technical Field

The utility model relates to a semiconductor processing technology field, more specifically say, relate to a gas distribution system and semiconductor processing apparatus.

Background

Semiconductor processing for the manufacture of integrated circuits includes: chemical vapor deposition processes, plasma treatment processes, and the like. The plasma processing technology is mainly used for processing a semiconductor substrate, and the principle of the plasma processing technology comprises the following steps: a plasma processing device (e.g., an inductively coupled coil) is driven using a radio frequency power source to generate a strong high frequency alternating magnetic field, so that a low pressure process gas is ionized to generate a plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, free radicals and the like, and the active particles can generate various physical and chemical reactions with the surface of the semiconductor substrate to be processed, so that the appearance of the surface of the wafer is changed, and the plasma processing technology is completed.

It is necessary to introduce a reaction gas or other auxiliary gas having a specific flow rate, a specific pressure, and a specific gas composition in the plasma treatment process. To obtain these reactive or auxiliary gases with specific parameters requires a delivery system that can precisely control the gas flow and pressure to be connected between the gas source and the reaction chamber. Therefore, the quality of the gas distribution system in the plasma processing apparatus directly affects the performance of the plasma processing apparatus.

Disclosure of Invention

In view of this, the utility model provides a gas distribution system and semiconductor processing apparatus effectively solves the technical problem that prior art exists, has improved semiconductor processing apparatus's performance.

In order to achieve the above purpose, the utility model provides a technical scheme as follows:

a gas distribution system comprising:

the input end of the main trunk of the manifold receives the processing gas, and the output ends of a plurality of branches of the manifold are communicated with the corresponding reaction cavities;

the air pressure adjusting component is positioned on the main trunk;

and the first air inlet valve, the mass flow controller and the second air inlet valve are sequentially connected to each branch, wherein the flow of the processing gas on each branch is less than or equal to 2000 sccm.

Optionally, the air pressure adjusting assembly includes a switch valve and a regulator, wherein the switch valve is used for switching on and off of the processing gas in the main line, and the regulator is used for adjusting the pressure of the processing gas in the main line.

Optionally, the air pressure adjusting assembly further comprises a filter connected to the regulator.

Optionally, the air pressure adjusting assembly further includes a pressure gauge connected to the regulator.

Optionally, the flow range of the processing gas is 40-1000 sccm.

Optionally, the accuracy of the mass flow controller is less than or equal to 0.25% of the maximum value of the flow.

Optionally, the precision of the mass flow controller is as follows:

when the flow is 2-25% of the maximum value, the precision is less than or equal to 0.25% of the maximum value;

when the flow is 25-100% of the maximum value, the precision is less than or equal to 1% of the set value.

Optionally, the precision of the mass flow controller is as follows:

when the flow is 0.5-10% of the maximum value, the precision is less than or equal to 0.5% of the set value.

Optionally, the first air inlet valve is a hand air integrated valve.

Optionally, the semiconductor processing apparatus is a gas distribution system as described above.

Optionally, the semiconductor processing apparatus is a plasma processing apparatus.

Compared with the prior art, the utility model provides a technical scheme has following advantage at least:

the utility model provides a gas conveying system and semiconductor processing apparatus, include: the input end of the main trunk of the manifold receives the processing gas, and the output ends of a plurality of branches of the manifold are communicated with the corresponding reaction cavities; the air pressure adjusting component is positioned on the main trunk; and the first air inlet valve, the mass flow controller and the second air inlet valve are sequentially connected to each branch, wherein the flow of the processing gas on each branch is less than or equal to 2000 sccm.

According to the above, the technical scheme provided by the utility model for carry a plurality of reaction chambers with reactant gas, through the flow in the restriction pipeline, make a plurality of branches of manifold can share an atmospheric pressure adjusting part on the trunk road, even if certain branch is closed suddenly and is opened or takes place other circumstances that lead to this branch road pressure to produce the change, also can be through the flow of this branch road place quality flow controller stable control process gas, and then guarantee the sculpture homogeneity of semiconductor processing apparatus, reduce the technology harmfully that causes because of the gas fluctuation; in addition, the air pressure adjusting device on the branch is removed, and the air pressure adjusting component on the shared main trunk is arranged, so that the manufacturing cost of the equipment can be obviously reduced, and the cost can be further reduced along with the increase of the reaction chambers.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a gas distribution system according to an embodiment of the present invention;

fig. 2 is a schematic structural diagram of another gas distribution system provided in an embodiment of the present invention;

fig. 3 is a schematic structural diagram of another gas distribution system according to an embodiment of the present invention;

FIG. 4 shows the data comparison between the pressure-sensitive mass flow controller and the pressure-insensitive mass flow controller when the gas flow rate of the present invention is 2000 sccm;

fig. 5 shows the data comparison between the pressure-sensitive mass flow controller and the pressure-insensitive mass flow controller when the gas flow rate of the present invention is 1000 sccm;

FIG. 6 is a table of experimental data when the maximum gas flow of the present invention is 2000 sccm;

fig. 7 is an experimental data table of the present invention when the maximum value of the gas flow is 1000 sccm.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

The utility model discloses a semiconductor processing apparatus has a plurality of sub-reaction chambeies under same main system usually, and every sub-reaction chamber is inspired by the radio frequency after sneaking different reaction gas into the cavity inside through outside gas distribution system and is carried out the etching process. The gas distribution system mainly comprises a main pipeline leading to plant service equipment to receive treatment gas from a plant service, and the treatment gas is continuously and stably input into a reaction cavity through a branch pipeline after being subjected to pressure regulation of a conveying system. When a substrate is etched, different gases need to be input into the reaction cavities according to a set flow ratio, in order to save cost, the same gases input into different reaction cavities share one set of distribution system, and if the gas inlet mode of a certain reaction cavity is changed, such as opening and closing or changing of the flow ratio, the gas flow of other reaction cavities under the same main system is required not to be influenced, so that the gas input fluctuates.

Example one

As shown in fig. 1, the utility model discloses a gas distribution system, the same gaseous transport of a plurality of sub-reaction chambers of mainly used, under some circumstances, can be according to actual need, select single gaseous or mist's transport, this system architecture includes the manifold, the manifold includes trunk 300 and a plurality of branch road 200, the input of trunk 300 receives the process gas, corresponding reaction chamber is access to the output of a plurality of branch roads 200, trunk 300 and a plurality of branch road 200 design length according to the environment that plasma processing equipment located, if can expand trunk 300 and a plurality of branch road 200 through multistage pipeline interconnect. The main line 300 is provided with a gas pressure adjusting assembly 100 for initially setting a process gas received from a plant according to a plasma reaction condition, monitoring a gas pressure on the main line 300, and automatically or manually adjusting the pressure according to a change of a situation, wherein the process gas passing through the gas pressure adjusting assembly 100 flows into a plurality of branches 200, and the process gas sequentially flows through a first gas inlet valve 210, a mass flow controller 220, and a second gas inlet valve 230 with respect to a specific branch 200. The first and second

air intake valves

210 and 230 are mainly used for controlling the on-off of the gas in the branch 200, and in order to ensure the reliability of the closing of the branch 200, the first and second

air intake valves

210 and 230 cooperate, because the on-off of one branch 200 causes the maximum fluctuation of the gas in the system, so if one air intake valve fails to generate air leakage in the closed state, the other air intake valve can ensure that the branch 200 is maintained in the closed state, preferably, the first and second

air intake valves

210 and 230 are closed simultaneously to avoid the secondary fluctuation caused by the time difference of independent closing, in some embodiments, the first air intake valve 210 is a manual integral valve, i.e. the first air intake valve 210 can be opened and closed manually or opened by independent gas operation, the second air intake valve 230 is a pneumatic valve, which is closed or opened by independent gas manipulation. The mass flow controller 220 is used to maintain the flow set value of the branch 200, and ensure that the maximum value of the flow of the branch 200 is less than or equal to 2000sccm, the mass flow controller 220 is preferably a pressure insensitive mass flow controller 220, when the gas distribution system generates pressure fluctuation, such as the on-off or flow change of other branches 200, which affects other branches 200 connected with the gas distribution system, the mass flow controller 220 can adjust the affected branch 200 connected with the mass flow controller according to the pressure change, so that the processing gas passing through the mass flow controller 220 can be adjusted by the mass flow controller 220 to be stable, when the flow of the branch 200 is changed, as long as the maximum value is less than or equal to 2000sccm, the adjusting effect of the mass flow controller 220 can meet the gas condition requirement of plasma etching, if the maximum value is greater than 2000sccm after the flow change of the branch 200, the regulating capability of the mass flow controller 220 will not be sufficient for rapid regulation and thus the flow of the branch 200 will not be maintained stable. As shown in fig. 4, it shows that in the gas distribution system of the present invention, when the flow is set to 2000sccm, from opening to closing, the control situation of the different mass flow controllers 220 to the flow of the branch where the solid line represents the pressure insensitive mass flow controller, and the dotted line represents the pressure sensitive mass flow controller, it can be seen that the pressure insensitive mass flow controller can better control the stability of the flow, and the pressure sensitive mass flow controller fluctuates up and down around 2000sccm, with the fluctuation range ± 100 sccm; as shown in fig. 5, it shows that in the gas distribution system of the present invention, when the flow is set to 1000sccm, from opening to closing, the control situation of different mass flow controllers 220 to the branch flow at the place, wherein the solid line represents the pressure insensitive mass flow controller, and the dotted line represents the pressure sensitive mass flow controller, it can be seen that the pressure insensitive mass flow controller can better control the stability of the flow, and the pressure sensitive mass flow controller can better maintain about 1000sccm at other times except that it has a large fluctuation at one point, but the stabilization effect is not as good as that of the pressure insensitive mass flow controller. In addition, through other comparative experiments, the pressure insensitive mass flow controller also produced large fluctuations when the maximum flow rate was greater than 2000sccm, ranging approximately ± 5% of the maximum value, with the pressure sensitive mass flow controller producing larger fluctuations. In other embodiments, the gas flow in the bypass is in the range of 40-1000 sccm, so that the mass flow controller 220 can control the process gas in a more precise range, and when the gas flow is less than 10sccm, the accuracy of the mass flow controller 220 cannot meet the control requirement. In other embodiments, the accuracy of mass flow controller 220 is less than or equal to 1% of the maximum flow in the branch; in a further preferred embodiment, the accuracy of the mass flow controller 220 is 0.25% or less of the maximum value when the bypass flow rate is 2-25% of the maximum value, and the accuracy is 1% or less of the set value when the bypass flow rate is 25-100% of the maximum value. For example, the maximum value of the branch flow is 1000sccm, the branch flow value is set to be 500sccm, and when the actual flow in the branch is 20-250 sccm, the precision is less than or equal to +/-2.5 sccm; when the actual flow rate in the branch is 250-1000 sccm, the accuracy is within + -2.5 sccm and + -10 sccm, i.e. if the actual flow rate in the branch is 500sccm between 250-1000 sccm, the accuracy is less than or equal to + -5 sccm, and in a further preferred embodiment, when the flow rate in the branch is 0.5-10% of the maximum value, the accuracy is less than or equal to 0.5% of the set value.

When the flow maximum value that is shown as figure 6 and figure 7 respectively for handling gas in the branch road is 2000sccm and 1000sccm, the flow fluctuation scope table of experimental record, the mass flow controller of selection are the pressure insensitive type, can see from the table, the utility model discloses a gas distribution system can reach less fluctuation to the control of flow on the branch road, satisfies plasma etching technology to the accurate requirement of gas.

Example two

As shown in fig. 2, the difference between this embodiment and the first embodiment is that the gas pressure regulating assembly 100 is composed of an on-off valve 110 and a regulator 120, the on-off valve 110 is used for switching the main line between a closed state and an open state to control simultaneous on-off of the same input gas in different reaction chambers, and the regulator 120 is used for regulating the pressure value of the processing gas when the processing gas passes through the main line to maintain the stability of the gas pressure in the main line 300.

EXAMPLE III

As shown in fig. 3, the embodiment is different from the second embodiment in that the gas pressure regulating assembly 100 further includes a filter 130 and a pressure gauge 140, the filter 130 is used for filtering the gas before being input into each branch 200, and the pressure gauge 140 is used for monitoring the pressure in the main line 300, so as to realize the feedback of the pressure data.

In traditional gas distribution system, in order to maintain the flow stability of each branch road 200, generally need to set up components such as regulator 120, filter 130 and manometer 140 on every branch road, the utility model discloses a limit the maximum flow on each branch road, allow different branch roads can maintain the stability of branch road flow equally under the one set of atmospheric pressure adjusting part 100 circumstances that is located the main road of sharing, practiced thrift the cost, especially when the reaction chamber increases, equipment cost can obtain very big reduction.

Example four

Correspondingly, the embodiment of the utility model provides a semiconductor processing apparatus is still provided, semiconductor processing apparatus includes the gas distribution system that any one of the above-mentioned embodiment provided.

In an embodiment of the present invention, the present invention provides a semiconductor processing apparatus, which can be a plasma processing apparatus, and is not limited to this.

The embodiment of the utility model provides a gas distribution system and semiconductor processing apparatus, include: a manifold, the input end of the main trunk 300 of which receives the process gas, and the output ends of the plurality of branches 200 of which lead to the corresponding reaction chambers;

an air pressure regulating assembly 100 located on the trunk;

and a first gas inlet valve 210, a mass flow controller 220, and a second gas inlet valve 230, which are sequentially connected to each of the branches 200, wherein the flow rate of the process gas on the branch is not more than 2000 sccm.

As can be seen from the above, the embodiment of the present invention provides a technical solution for conveying reaction gas to a plurality of reaction chambers, and by limiting the flow rate in the pipeline, a plurality of branches 200 of the manifold can share one air pressure adjusting assembly 100 on the main line 300, even if a certain branch 200 is suddenly closed and opened or other conditions causing pressure changes of the branch 200 occur, the flow rate of the processing gas can be stably controlled by the mass flow controller 220 where the branch 200 is located, thereby ensuring etching uniformity of the semiconductor processing apparatus and reducing process defects caused by gas fluctuation; in addition, the air pressure adjusting device on the branch circuit 200 is removed, and the air pressure adjusting assembly 100 on the common main circuit 300 is adopted, so that the manufacturing cost of the equipment can be obviously reduced, and the cost can be further reduced along with the increase of the reaction chambers.

The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas distribution system, comprising:

the air pressure adjusting component is positioned on the main trunk;

2. The gas distribution system of claim 1, wherein the gas pressure regulating assembly comprises a switching valve for controlling the on/off of the process gas of the main line and a regulator for effecting pressure regulation of the process gas of the main line.

3. The gas distribution system of claim 2, wherein the gas pressure regulating assembly further comprises a filter coupled to the regulator.

4. The gas distribution system of claim 2, wherein the gas pressure regulating assembly further comprises a pressure gauge connected to the regulator.

5. The gas distribution system of claim 1, wherein the flow rate of the process gas ranges from 40 to 1000 sccm.

6. The gas distribution system of claim 5, wherein the accuracy of the mass flow controller is less than or equal to 0.25% of the maximum value of the flow.

7. The gas distribution system of claim 6, wherein the accuracy of the mass flow controller is:

8. The gas distribution system of claim 7, wherein the accuracy of the mass flow controller is:

9. The gas distribution system of claim 1, wherein the first gas inlet valve is a manual integrated valve.

10. A semiconductor processing apparatus, characterized in that it comprises a gas distribution system according to any one of claims 1 to 9.

11. The semiconductor processing apparatus of claim 10, wherein the semiconductor processing apparatus is a plasma processing apparatus.