CN217114307U

CN217114307U - Substrate processing apparatus

Info

Publication number: CN217114307U
Application number: CN202220575518.8U
Authority: CN
Inventors: 曹源泰
Original assignee: Jusung Engineering Co Ltd
Current assignee: Jusung Engineering Co Ltd
Priority date: 2021-03-16
Filing date: 2022-03-16
Publication date: 2022-08-02
Anticipated expiration: 2032-03-16
Also published as: KR20220129352A; TWM632973U

Abstract

Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber, a support member disposed inside the chamber to support a substrate, and a gas flow control part mounted on a sidewall of the chamber to be disposed between the sidewall of the chamber and a side surface of the support member along a periphery of the support member. The gas flow control part comprises an inclined surface inclined relative to the side surface of the support. Thus, according to an embodiment, the time for allowing the gas to move between the injection part and the support in a diffused manner may be increased, and the amount of the gas moving toward the corners of the chamber may be increased. Therefore, a corner cleaning defect can be prevented from occurring, and a thin film having a uniform thickness can be formed on the substrate. In addition, because the substrate or chamber is processed with a relatively small amount of gas, the process efficiency of processing the substrate or chamber may be improved.

Description

Substrate processing apparatus

Technical Field

The utility model relates to a substrate processing equipment, in particular to substrate processing equipment that can prevent that the corner in the cavity from producing the clearance defect and can form the film that has even thickness.

Background

When a process of depositing a thin film on a substrate is performed in a chamber, the thin film or byproducts may adhere to the inner wall of the chamber as impurities contaminating the substrate in a subsequent deposition process.

Therefore, after the deposition process is performed several times or a predetermined number of times, the cleaning gas is injected to clean the inside of the chamber. However, when the cleaning gas is diffused or moved into the chamber, the amount of the cleaning gas moving toward the corners is relatively small. Therefore, a cleaning defect in which impurities remain at the corners of the cavity may be generated.

[ Prior art documents ]

[ patent document ]

(patent document 1) Korean patent registration No. 0794661

SUMMERY OF THE UTILITY MODEL

The utility model provides a substrate processing equipment capable of improving the cleaning efficiency of a cavity.

The utility model also provides a can prevent that the corner in the cavity from producing the base plate treatment facility of clearance defect.

The utility model discloses also provide a can form the base plate treatment facility of the film that has even thickness.

The utility model also provides a can increase the base plate treatment facility of the volume that gaseous corner in towards the cavity removed.

According to an exemplary embodiment, a substrate processing apparatus includes: a cavity; a supporter disposed inside the chamber to support the substrate; and a gas flow control part arranged on the side wall of the cavity body and arranged between the side wall of the cavity body and the side surface of the supporting piece along the periphery of the supporting piece, wherein the gas flow control part comprises an inclined surface inclined relative to the side surface of the supporting piece.

According to another exemplary embodiment, a substrate processing apparatus includes: a cavity; a supporter disposed inside the chamber to support the substrate; and a gas flow control part mounted on the side wall of the cavity to be disposed between the side wall of the cavity and the side surface of the support part along the periphery of the support part, wherein the gas flow control part includes an inclined surface inclined with respect to the side surface of the support part, when the support part is disposed at a first height with respect to the bottom of the cavity, the side surface of the support part is separated from the side wall of the cavity or the gas flow control part by a first gap, and when the support part is disposed at a second height with respect to the bottom of the cavity, the side surface of the support part is separated from the side wall of the cavity or the gas flow control part by a second gap, wherein the second height is smaller than the first height, and the second gap is smaller than the first gap.

The substrate processing apparatus may further include an edge frame disposed above the support and provided to extend outward from an edge of the support, and the gas flow control part may include an inclined surface inclined to face a side surface of the edge frame.

When the supporting member is disposed at a first height relative to the bottom of the cavity, the side of the edge frame may be separated from the sidewall of the cavity or the gas flow control portion by a third gap, and when the supporting member is disposed at a second height relative to the bottom of the cavity, the side of the edge frame and the gas flow control portion may be separated from each other by a fourth gap, wherein the second height may be less than the first height, and the fourth gap may be less than the third gap.

The gas flow control portion may have an outer shape in which a bottom portion of the gas flow control portion extends to overlap the edge frame in the width direction.

The gas flow control portion may include: installed on a central area except the edge of the side wall along the width direction; and a mounting member extending from a bottom of the gas flow regulating member toward the support member.

The second gap may be in a range of about 0.5 millimeters to about 2 millimeters.

The fourth gap may be in a range of about 0.5 millimeters to about 2 millimeters.

The gas flow modifier may include a plurality of blocks arranged in a width direction of the sidewall and separated from each other.

The inclined surface may be provided at an angle of about 30 ° to about 60 ° with respect to an extension line parallel to the support member.

Drawings

Exemplary embodiments can be understood in more detail from the following description, taken in conjunction with the accompanying drawings, in which:

fig. 1 to 3 are schematic views showing a substrate processing apparatus according to an embodiment.

Fig. 4 is a plan view of a substrate processing apparatus as viewed from a top side of an edge frame according to an embodiment.

Fig. 5 is a partially enlarged view of a portion a in fig. 1, and fig. 6 is a partially enlarged view of a portion B in fig. 3.

Fig. 7 is a plan view of a substrate processing apparatus including a gas flow control portion, as viewed from a top side of an edge frame according to a modified example.

Fig. 8 is a drawing showing a substrate processing apparatus including a support according to a modified example.

[ description of reference ]

1000 cavity

1100 body

1110,1111a,1111b,1111c,1111d side wall

1120 bottom wall

1200, cover body

2000 supporting part

2100 support

2110 supporting element

2120 edge frame

2200 driver

3000 spray part

4000: edge frame

4100 groove

5000,5000a,5000b,5000c,5000d gas flow control part

5100,5100a,5100b,5100c,5100d gas flow regulating member

5110A block

5200,5200a,5200b,5200c,5200d mounting part

5210 mounting member

5220 inserting member

6000 exhaust part

6100 exhaust pipe

6200 pump

8000 plasma generator

8100 container

8200 coil

8300 electric power supplier

9000 supply pipe

S is a substrate

C, C1, C2, C3, C4 corner

M is a mask

P1 first point

AE, AE1, AE2, AE3, AE4 edge

AC, AC1, AC2, AC3, AC4 center region

SL inclined plane

Angle of theta

Le extension line

g, a second gap

Detailed Description

Hereinafter, embodiments will be described in detail with reference to the related drawings. The present invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the sizes of layers and regions may be exaggerated for convenience of description. Like numbers refer to like elements throughout.

Fig. 1 to 3 are schematic views showing a substrate processing apparatus according to an embodiment; FIG. 4 is a plan view of a substrate processing apparatus as viewed from a top side of an edge frame according to an embodiment; fig. 5 is a partially enlarged view of a portion a in fig. 1, and fig. 6 is a partially enlarged view of a portion B in fig. 3.

Here, fig. 1 and 5 are drawings illustrating a process of treating a substrate, and fig. 3 and 6 are drawings illustrating a process of cleaning the inside of a chamber. In addition, fig. 2 illustrates a state in which the support is lowered after the process of treating the substrate is finished to separate the substrate from the support.

Referring to fig. 1 to 4, a substrate processing apparatus according to one embodiment may include a chamber 1000, a support 2000, a spray part 3000, an edge shelf 4000, a gas flow control part 5000, and an exhaust part 6000, wherein the chamber 1000 has an inner space in which a substrate S is processed, the support part 2000 is provided with a support 2100 supporting the substrate S loaded in the chamber 1000, the injection part 3000 is installed inside the chamber 1000 to face the support 2100 to inject gas, the edge frame 4000 is disposed above the support 2100 to extend outward from the edge in a width direction of the support 2100, the gas flow control part 5000 is installed on other regions except for a corner C in the sidewall 1110 of the chamber 1000 such that a flow passage through which gas passes is formed between the edge frame 4000 and the gas flow control part 5000, and the exhaust part 6000 is connected to the chamber 1000 to be disposed below the support 2100 to exhaust gas and byproducts in the chamber 1000.

In addition, the substrate processing apparatus may include a plasma generator 8000 disposed outside the chamber 1000 to generate plasma, and a supply pipe 9000 installed to connect the plasma generator 8000 to the injection part 3000.

In addition, the substrate processing apparatus may further include a mask M mounted on the bottom of the edge frame 4000.

The chamber 1000 has an inner space in which the substrate S can be processed, and the inner space is maintained in an airtight state. The chamber 1000 may include a body 1100 having an inner space and a cover 1200 covering a top opening of the body 1100.

Hereinafter, the chamber 1000 will be described in detail. Here, the chamber 1000 having the inner space with a rectangular sectional profile will be exemplarily described.

The cover 1200 may be provided in a rectangular shape having four edges or sides. Since the cover 1200 is used to cover the top opening of the body 1100 as described above, the cover can be referred to as a top wall of the cavity 1000.

The body 1100 may include a bottom wall 1120 disposed to face the bottom side of the cover 1200 and provided with a rectangular shape having four edges or sides, and a side wall 1110 extending upward from the bottom wall 1120 to surround the four edges or sides of the bottom wall 1120.

The sidewall 1110 is disposed between the cover 1200 and the bottom wall 1120 vertically separated from each other, and is provided to extend in a circumferential direction of the cover 1200 and the bottom wall 1120. That is, the sidewall 1110 may have an interior space and have an open hollow or tubular shape with top and bottom sides. The bottom wall 1120 is installed to cover the bottom opening of the sidewall 1110, and the cover 1200 is installed to cover the top opening of the sidewall 1110.

The sidewall 1110 is provided to extend in the circumferential direction of the cover 1200 and the bottom wall 1120 as a rectangular cover. To this end, as shown in fig. 4, the side walls 1110 may be provided to include four side walls (hereinafter, referred to as first to

fourth side walls

1111a,1111b,1111c,1111 d). In addition, the first side wall 1111a, the second side wall 1111b, the third side wall 1111c and the fourth side wall 1111d may be arranged clockwise, and the interconnected side walls 1110 may have a rectangular hollow shape. More specifically, the first and

third side walls

1111a,1111 c extend in the first direction (X-axis direction) and are separated from each other in the second direction (Y-axis direction), and the second and

fourth side walls

1111b,1111 d extend in the second direction (Y-axis direction) and are separated from each other in the first direction (X-axis direction). Here, the first side wall 1111a and the third side wall 1111c have the same length in the first direction, and the second side wall 1111b and the fourth side wall 1111d have the same length in the second direction. The length of each of the first and

third side walls

1111a,1111 c in the first direction may be greater than the length of each of the second and

fourth side walls

1111b,1111 d in the second direction. And, the second side wall 1111b is connected to connect one end of the first side wall 1111a to one end of the third side wall 1111c, and the fourth side wall 1111d is connected to connect the other end of the first side wall 1111a to the other end of the third side wall 1111 c.

Therefore, as shown in fig. 4, the side wall 1110 including the first to fourth side walls 1111a to 1111d may have a hollow shape having a rectangular inner space. Furthermore, since each of the first and

third side walls

1111a,1111 c has a longer extension length than each of the second and

fourth side walls

1111b,1111 d, the first and

third side walls

1111a,1111 c may be referred to as long side walls, and the second and

fourth side walls

1111b,1111 d may be referred to as short side walls. In addition, since the first to fourth sidewalls are walls constituting the cavity, the first to fourth sidewalls may also be referred to as first to fourth walls.

Since the first to fourth side walls 1111a to 1111d are connected to each other in such a manner as to provide the side wall 1110, the side wall 1110 has corners C (corners C1, C2, C3, C4) provided by two side walls adjacent to each other. That is, the sidewalls 1110 are provided to have a connection part for connecting adjacent two sidewalls to each other, and a corner C (corners C1, C2, C3, C4) which is an area from the connection part to a point separated by a predetermined distance in both directions. In other words, the side wall 1110 has a corner C (corners C1, C2, C3, C4) corresponding to the edges of two adjacent side walls. Here, the edge of the side wall 1111 (

side walls

1111a,1111b,1111c,1111 d) may represent an area from each of both ends of the side wall 1110 to a first point P1 separated by a first distance. In addition, the other regions except for the two edges AE (edges AE1, AE2, AE3, AE4) of the side wall 1110 or the region between the two edges AE may be referred to as a central region AC (central regions AC1, AC2, AC3, AC 4). Here, the extension length of the central region AC may be more than about 80% and less than about 95% of the entire length of the sidewall 1110, and the remaining length may be the length of each of the two edges AE.

Specifically, for example, as described above, the side wall 1110 includes the first to fourth side walls 1111a to 1111d, and when the first side wall 1111a, the second side wall 1111b, the third side wall 1111C and the fourth side wall 1111d are sequentially arranged along the clock direction to be connected to each other, the side wall 1110 includes four corners C1, C2, C3 and C4. That is, the side wall 1110 includes a first corner C1 defined by the first side wall 1111a and the second side wall 1111b, a second corner C2 defined by the second side wall 1111b and the third side wall 1111C, a third corner C3 defined by the third side wall 1111C and the fourth side wall 1111d, and a fourth corner C4 defined by the fourth side wall 1111d and the first side wall 1111 a.

Specifically, the sidewall 1110 may include a first corner C1, a second corner C2, a third corner C3 and a fourth corner C4. The first corner C1 includes a first connection portion between the first side wall 1111a and the second side wall 1111b and the edges AE1, AE2 of the first and

second side walls

1111a,1111b, and the first connection portion is between the edges AE1, AE 2. The second corner C2 includes a second connection portion between the second side wall 1111b and the third side wall 1111C and the edges AE2, AE3 of the second and third side walls 1111b,1111C, and the second connection portion is between the edges AE2, AE 3. The third corner C3 includes a third connection portion between the third side wall 1111C and the fourth side wall 1111d and the edges AE3, AE4 of the third and fourth side walls 1111C,1111d, and the third connection portion is between the edges AE3, AE 4. The fourth corner C4 includes a fourth connection portion between the fourth side wall 1111d and the first side wall 1111a and the edges AE4, AE1 of the fourth and

first side walls

1111d, 1111a, and the fourth connection portion is between the edges AE4, AE 1.

In the above description, it has been described that the cavity 1000 has a rectangular sectional profile, and the side wall 1110 has four corners C1 to C4 including the first to fourth side walls 1111a to 1111 d. However, the present embodiment is not limited thereto, and the chamber 1000 may be provided such that the chamber 1000 has various polygonal cross-sectional shapes. In addition, the sidewall 1110 may be provided to include less than four sidewalls or more than four sidewalls, such that the sidewall 1110 has less than four corners C or more than four corners C.

The exhaust part 6000 may be a member for exhausting the inside of the chamber 1000, and may be connected to the chamber 1000 to be disposed below the supporter 2100. Specifically, the exhaust part 6000 may communicate with the inner space of the cavity 1000 and may be connected to the bottom wall 1120 of the cavity 1000 to be disposed below the support 2100. In addition, the exhaust part 6000 may include an exhaust pipe 6100 connected to the chamber 1000 and a pump 6200 connected to the exhaust pipe 6100 from the outside of the chamber 1000. The exhaust unit 6000 may exhaust the gas and byproducts inside the chamber 1000 to the outside by the operation of the pump 6200, and may adjust the pressure inside the chamber 1000.

In addition, since the gas and the byproducts inside the chamber 1000 move toward the exhaust part 6000 to be exhausted by the suction or pumping force (pumping force) of the exhaust part 6000, it can be described that the flow of the gas and the byproducts is generated by the operation of the exhaust part 6000.

The supporting portion 2000 may include a support 2100 on which the substrate S is disposed and a driver 2200 disposed below the support 2100 to lift the support 2100.

The support 2100 may be installed to face the injection part 3000 from a bottom side of the injection part 3000. The support 2100 may be manufactured to be larger than the substrate S and may be provided to correspond to the outer shape of the substrate S, such as a rectangle. In addition, a heater may be installed inside the support 2100, and the heater may generate heat of a default temperature to heat the support 2100 and the substrate S.

The driver 2200 may be installed to support at least one region of the support 2100, such as a central portion. Also, by the operation of the driver 2200, the support 2100 may be raised to approach the injection part 3000 or may be lowered to be distant from the injection part 3000.

The injection part 3000 is installed inside the chamber 1000 to inject gas toward the support 2100 facing the support 2100. The injection part 3000 may be installed to be separated from the cover 1200 (i.e., a top wall in the cavity 1000) and below the cover 1200. Accordingly, a predetermined space may be provided between the injection part 3000 of the chamber 1000 and the cover 1200, and the space may be used to diffuse the gas introduced from the supply pipe 9000 in the width direction of the chamber 1000. In this case, the cover 1200 separated from the injection part 3000 and located above the injection part 3000 may serve as a backing plate (backing plate).

The injection part 3000 may be, for example, in the form of a shower head (showerhead) provided with a plurality of holes through which gas is discharged or injected. Further, the jetting part 3000 may have an outer shape corresponding to the outer shape of the substrate S, such as a substantially rectangular outer shape.

The plasma generator 8000 receives gas to excite the gas and supplies the excited gas into the chamber 1000 through the supply pipe 9000. The plasma generator 8000 may include a container 8100 installed to be connected to a supply pipe 9000 from the outside of the chamber 1000, a coil 8200 installed to surround the outside of the container 8100, and a power supply 8300 connected to one end of the coil 8200 to apply radio frequency power. The plasma generator 8000 excites gas in a vessel 8100 surrounded by a coil 8200 to generate plasma.

The gas supplied into the container 8100 may be a gas for processing the substrate S, that is, a gas for depositing a thin film on the substrate S or a gas for etching the substrate S or the thin film. Also, the gas supplied into the container 8100 may be a gas for cleaning the inside of the chamber 1000. In this case, the gas for cleaning the chamber 1000 may include NF ₃ 。

As described above, the plasma generator 8000 is a remote plasma generator that excites gas to generate plasma outside the chamber 1000 to supply the plasma into the chamber 1000.

The edge shelf 4000 may be a member for suppressing or preventing the gas injected from the injection part 3000 from moving or flowing to other regions on the support 2100 except for a region where a substrate is disposed. For example, when the gas injected from the injection part 3000 is a gas for depositing a thin film, the edge shelf 4000 may be a member for suppressing or preventing the gas from reaching other regions than the substrate S and depositing. Specifically, the edge shelf 4000 may be provided to suppress or prevent gas from flowing or depositing toward the side and bottom surfaces of the support 2100 where the substrate S is not disposed and the surface of the driver 2200.

For this, the edge shelf 4000 is provided in a profile extending from an edge of the support 2100 to the outside of the support 2100 in a width direction such that a substrate area to be processed is exposed and disposed above the support 2100. That is, as shown in fig. 4, the edge frame 4000 may have a hollow shape that shields an edge of the top surface of the support 2100 on which the substrate S is mounted and exposes other regions. Here, the direction of the edge of the support 2100 in the width direction may represent a first direction (X-axis direction) and a second direction (Y-axis direction).

In addition, an edge frame 4000 is provided to extend from the edge of the support 2100 toward the sidewall 1110 of the cavity 1000. Thus, a portion of the edge shelf 4000 faces the support 2100 and the remaining portion is disposed outside the support 2100. That is, a portion of the edge frame 4000 overlaps the support 2100 in the width direction, and the remaining portion of the edge frame 4000 is disposed outside the support 2100 in the width direction.

Accordingly, the edge frame 4000 is provided to extend from the edge of the support 2100 toward the sidewall 1110 of the cavity 1000, and the end facing the sidewall 1110 extends to be disposed outside the side of the support 2100. That is, the edge frame 4000 is provided such that its end is located outside the side of the support 2100. Therefore, the end of the edge frame 4000 protrudes more toward the sidewall 1110 in the width direction than the side of the support 2100. Therefore, the distance between the sidewall 1110 of the cavity 1000 and the end of the edge frame 4000 is smaller than the distance between the sidewall 1110 of the cavity 1000 and the side of the support 2100. In other words, the gap between the sidewalls 1111a,1111b,1111c,1111d of the cavity 1000 and the side of the edge bracket 4000 is smaller than the gap between the sidewalls 1111a,1111b,1111c,1111d of the cavity 1000 and the side of the support 2100.

Also, because the edge frame 4000 is disposed on the top side of the support 2100, the gas above the support 2100 moves downward to pass through the space between the edge frame 4000 and the sidewall 1110 of the chamber 1000. Accordingly, the movement of the gas toward the sides and the bottom surface of the support 2100 may be suppressed or prevented to suppress or prevent the thin film from being deposited on the sides and the bottom surface of the support 2100.

As described below, the edge frame 4000 is provided with a groove 4100 in which a part of the mounting portion 5200 is inserted. That is, the grooves 4100 may have a profile recessed from the bottom surface of the edge frame 4000 to the opposite side of the bottom surface. Grooves 4100 may allow edge frame 4000 to be securely mounted without misalignment when support 2100 is lowered to allow edge frame 4000 to be mounted on mounting portion 5200.

The mask M is a member for selectively processing the substrate S, and may be, for example, a member for selectively depositing the substrate S. The mask M may have an outer shape with a plurality of openings. In addition, the mask M is disposed under the edge frame 4000 and may be mounted on the bottom of the edge frame 4000. That is, the mask M may be mounted on the bottom of the edge frame 4000 to move together with the edge frame 4000.

When the substrate processing process is performed in the chamber 1000 for a plurality of times or a predetermined number of times, the interior of the chamber 1000 is cleaned. That is, a cleaning process is performed to deposit or adhere films or byproducts to the support 2100 and the sidewalls of the chamber 1000. Hereinafter, for convenience of description, films or byproducts deposited or adhered to the support 2100 and the sidewall of the chamber 1000, and thus the films or byproducts to be removed are collectively referred to as "impurities".

For cleaning the interior of the chamber 1000, e.g. containing NF ₃ Is supplied to the container 8100 of the plasma generator 8000, and radio frequency power is applied toCoil 8200. Accordingly, the cleaning gas is excited in the container 8100 to generate plasma, and the excited cleaning gas is supplied to a space between the injection part 3000 of the chamber 1000 and the cover 1200 through the supply pipe 9000. The cleaning gas is ejected downward by the ejection portion 3000. When the cleaning gas is injected into the chamber 1000 in this manner, impurities such as films or byproducts react with the cleaning gas and are separated from the support 2100 and the sidewalls of the chamber 1000, and then are discharged through the exhaust 6000. Due to such a process, the inside of the chamber 1000 is cleaned.

However, when cleaning is performed by injecting the cleaning gas into the chamber 1000 through the injection part 3000 as described above, there is a disadvantage in that the cleaning effect of the corner C is poor. That is, a cleaning defect in which some impurities are not removed occurs at the corner C where two adjacent sidewalls are connected to each other.

Specifically, for example, in a first corner C1 defined by the first side wall 1111a and the second side wall 1111b, a second corner C2 defined by the second side wall 1111b and the third side wall 1111C, a third corner C3 defined by the third side wall 1111C and the fourth side wall 1111d, and a fourth corner C4 defined by the fourth side wall 1111d and the first side wall 1111a, some impurities may not be removed, resulting in a cleaning defect. In other words, in each of the first to fourth side walls 1111a to 1111d, a more serious cleaning defect may occur at the two edges AE1, AE2, AE3, AE4 when compared to the central areas AC1, AC2, AC3, AC 4.

This is because a relatively small amount of insufficient purge gas is directed toward the corners C1 to C4 as the gas injected from the injection part 3000 moves or diffuses toward the side wall 1110. That is, since the injection part 3000 is installed to extend from the center of the cavity 1000 in the width direction, for example, in the first direction (X-axis direction), the amount of gas moving toward the edges AE1, AE2, AE3, AE4 of each of the side walls 1111a to 1111d is less than the amount of gas moving toward the center regions AC1, AC2, AC3, AC 4. Therefore, not all the impurities adhered to the corners C1-C4 of the sidewall 1110 or the edges AE1, AE2, AE3, AE4 of the sidewalls 1111 a-1111 d are removed and remain, thereby causing cleaning defects.

In addition, the gas injected from the injection part 3000 moves or flows by the suction force of the exhaust part 6000 disposed below the support 2100. Therefore, the entire flow of the gas inside the chamber 1000 is directed downward in which the exhaust unit 6000 is provided. Therefore, in the sidewall 1110 disposed between the injection part 3000 and the support 2100, the closer to the top region adjacent to the injection part 3000, the less cleaning is performed. This is because the gas injected from the injection part 3000 tends to move downward, and thus the amount of the cleaning gas reaching the top of the sidewall 1110 adjacent to the injection part 3000 is small.

Therefore, in one embodiment, the gas flow control part 5000 (gas

flow control parts

5000a,5000b,5000C,5000 d) guiding the flow of the gas may be provided to increase the time for the gas to stay in the space between the injection part 3000 and the edge shelf 4000 and to move the gas injected into the chamber 1000 to the corner C (corners C1, C2, C3, C4).

The gas flow control part 5000 may be installed on the sidewalls 1111a to 1111d to be disposed between the sidewalls 1111a to 1111d of the chamber 1000 and the side surfaces of the support 2100. The gas flow controllers 5000 are provided in plurality and are respectively mounted to the side walls 1111a to 1111d constituting the side wall 1110. That is, four gas flow control parts (hereinafter, referred to as first to fourth gas flow control parts 5000a to 5000d) to be mounted to the first to fourth side walls 1111a to 1111d of the side wall 1110, respectively, may be provided. Specifically, as shown in fig. 4, the first gas flow control part 5000a is installed on a first side wall 1111a, the second gas flow control part 5000b is installed on a second side wall 1111b, a third side wall 1111c is installed on a third gas flow control part 5000c, and a fourth gas flow control part 5000d is installed on a fourth side wall 1111 d.

Each of the first to fourth gas flow control portions 5000a to 5000d may be provided to have an inclined surface inclined with respect to a side surface of the edge frame 4000 or the support 2100. Specifically, the top surface of each of the first to fourth gas flow control portions 5000a to 5000d may be provided as an inclined surface inclined with respect to the side surface of the edge frame 4000 or the support 2100. Specifically, the top surface of each of the first to fourth gas flow control portions 5000a to 5000d is provided with an inclined surface SL inclined downward such that the height of the top surface facing the injection portion 3000 decreases toward the inner space. Further, the bottom of each of the first to fourth gas flow control portions 5000a to 5000d may have an elongated profile such that a portion of the edge shelf 4000 in the width direction extends toward the outside of the support 2100 and overlaps with the bottom.

Here, the width direction may be a direction that intersects or is orthogonal to the extending direction (long axis direction) of each of the gas flow control portions 5000a to 5000 d. That is, in the case of the first and third gas

flow control portions

5000a,5000 c extending in the first direction (X-axis direction), the width direction may represent the second direction (Y-axis direction). In addition, in the case of the second and fourth gas

flow control portions

5000b,5000 d extending in the second direction (Y-axis direction), the width direction may indicate the first direction (X-axis direction).

The first to fourth gas flow control portions 5000a to 5000d include gas flow regulating members 5100 (gas flow regulating members 5100a to 5100d) mounted on side walls 1111a to 1111d to adjust a spacing distance (and a flow area) between the edge shelf 4000, the gas flow regulating members 5100, and mounting portions 5200 (mounting portions 5200a to 5200d) in which the mounting portions 5200 extend from the gas flow control portions 5000a to 5000d to the support member 2100, respectively, to mount or support the lowered edge shelf 4000.

Each of the first to fourth gas flow adjusting members 5100a to 5100d extends in the extending direction of the first to fourth side walls 1111a to 1111d and has a plate-like or strip-like shape having a predetermined thickness toward the inner space from each of the side walls 1111a to 1111 d. Further, the length of each of the first to fourth gas flow adjusting members 5100a to 5100d in the vertical direction may be greater than the length of the edge frame 4000. Further, the top surface of each of the first to fourth gas flow adjusting members 5100a to 5100d may be provided with an inclined surface SL inclined downward such that the height of the top surface facing the injection part 3000 decreases toward the inner space. In this case, the angle θ of the inclined surface SL may be about 30 ° to about 60 °. Specifically, the angle θ between the line parallel to the top surface of the edge frame 4000 (the extension line Le) and the inclined surface SL may be about 30 ° to about 60 °.

In each of the first to fourth gas flow adjusting members 5100a to 5100d extending in the extending direction of the first to fourth side walls 1111a to 1111d, the extending length thereof may be less than that of each of the first to fourth side walls 1111a to 1111 d. In addition, the first to fourth gas flow regulating members 5100a to 5100d may be arranged such that the center of the extending direction coincides with the center of each of the side walls 1111a to 1111 d. In addition, the first to fourth gas flow adjusting members 5100a to 5100d may be disposed on the center regions AC1, AC2, AC3, and AC4 of the first to fourth side walls 1111a to 1111d, respectively. That is, the first gas flow modifier 5100a is mounted on the center region AC1 of the first side wall 1111a, the second gas flow modifier 5100b is mounted on the center region AC2 of the second side wall 1111b, the third gas flow modifier 5100c is mounted on the center region AC3 of the third side wall 1111c, and the fourth gas flow modifier 5100d is mounted on the center region AC4 of the fourth side wall 1111 d. In other words, the first to fourth gas flow regulators 5100a to 5100d are respectively mounted on the regions of the first to fourth side walls 1111a to 1111d other than the edges AE1, AE2, AE3, AE 4. That is, the gas flow adjusting members 5100a to 5100d are installed in other regions than the corners C1 to C4 of the side wall 1110 divided by the first to fourth side walls 1111a to 1111 d.

Here, the first to fourth gas flow adjusting members 5100a to 5100d are provided such that a distance from the edge frame 4000 in a width direction is about 0.5 millimeters (mm) to about 2 mm. That is, as shown in fig. 3 and 6, when the height of the edge shelf 4000 is adjusted such that the first to fourth gas flow adjusting members 5100a to 5100d are disposed between the first to fourth side walls 1111a to 1111d and the edge shelf 4000, a gap between each of the gas flow adjusting members 5100a to 5100d and the edge shelf 4000 may be about 0.5mm to about 2 mm. Specifically, in each of the first to fourth gas flow regulating members 5100a to 5100d, a second gap g (separation distance) between a surface facing the inner space of the cavity 1000 (hereinafter, referred to as an inner surface) and the edge shelf 4000 may be about 0.5mm to about 2 mm. Specifically, the second gap g (separation distance) between the edge frame 4000 and the side surface of the inner surface of the first to fourth gas flow regulating members 5100a to 5100d corresponding to the bottom side of the inclined top surface may be about 0.5mm to about 2 mm.

Here, the width direction may be a direction that intersects or is orthogonal to the extending direction (long axis direction) of each of the gas flow regulators 5100a to 5100 d. That is, in the case of opposing the first and third

gas flow regulators

5100a,5100 c extending in the first direction (X-axis direction), the width direction may represent the second direction (Y-axis direction). Further, in the case of opposing the second and fourth

gas flow adjusters

5100b,5100 d extending in the second direction (Y-axis direction), the width direction may represent the first direction (X-axis direction).

As described above, when the height of the edge shelf 4000 is adjusted such that the first to fourth gas flow adjusting members 5100a to 5100d are disposed between the first to fourth side walls 1111a to 1111d and the edge shelf 4000, the gap between each of the gas flow adjusting members 5100a to 5100d and the edge shelf 4000 may be about 0.5mm to about 2 mm.

In addition, the height of the edge shelf 4000 may be adjusted by the height of the support 2100, and the interval distance (i.e., gap) between the first to fourth sidewalls 1111a to 1111d of the chamber 1000 or the gas flow control part 5000 and the side of the edge shelf 4000 may be changed according to the height of the support 2100. Herein, the height of the edge shelf 4000 or the support 2100 may represent the separation distance from the bottom to the top side in the cavity 1000.

Hereinafter, the gap according to the height of the support 2100 will be described.

As shown in fig. 1 and 5, when the support 2100 is disposed at a first height such that the top surface of the edge frame 4000 is disposed on the gas flow regulating members 5100a to 5100d, the respective side walls 1111a to 1111d of the chamber 1000 or the gas flow regulating members 5100a to 5100d may be provided to be separated from the side surfaces of the edge frame 4000 by a first gap. Also, as shown in fig. 3 and 6, when the support 2100 is disposed at the second height such that the top surface of the edge frame 4000 is disposed below the top surface of each of the gas flow modifiers 5100a to 5100d, each of the gas flow modifiers 5100a to 5100d and the side surface of the edge frame 4000 may be provided to be separated from each other by a second gap g. In this case, the second height is smaller than the first height, and the second gap g is smaller than the first gap. And, the second gap may be about 0.5mm to about 2 mm.

As shown in fig. 2, mounting portion 5200 may be a member for mounting or supporting edge frame 4000 so that support 2100 and edge frame 4000 are separated from each other. The mounting portion 5200 is mounted to be disposed on a path of movement of the edge frame 4000 to be lowered by the support 2100.

The mounting portion 5200 may be mounted to connect to the gas flow adjuster 5100, and thus a plurality of mounting portions 5200 may be provided. That is, four mounting portions (hereinafter referred to as first to fourth mounting

portions

5200a,5200b,5200c,5200 d) to be connected to the first to fourth gas flow regulating members 5100a to 5100d, respectively, may be provided.

Each of the first to fourth mounting portions 5200 (mounting portions 5200a to 5200d) may include a mounting member 5210 and an insert member 5220, wherein the mounting member 5210 extends from each of the gas flow modifiers 5100a to 5100d toward the support 2100 or the edge frame 4000, and the insert member 5220 protrudes upward from the mounting member 5210 such that at least part of the insert member 5220 is inserted in the groove 4100 provided in the edge frame 4000.

The mounting member 5210 may have one end connected to each of the gas flow regulating members 5100a to 5100d and the other end provided to overlap with a portion of the edge frame 4000 in the width direction.

The insert 5220 may be mounted on the mounting member 5210 and may be provided to protrude upward from the top surface of the mounting member 5210 provided with the edge frame 4000. In this case, the vertical extension length of the interposition member 5220 protruding upward from the mounting member 5210 may be smaller than the vertical extension length of each of the gas flow adjustment members 5100a to 5100 d. In other words, the top end of the interposition member 5220 is provided so as to be disposed below the top end of each of the gas flow regulating members 5100a to 5100 d.

Also, the interposition member 5220 is provided to face the groove 4100 provided in the edge frame 4000. In this case, the interposition member 5220 may be installed on the installation member 5210 to be separated from the respective gas flow adjustment members 5100a to 5100 d. Accordingly, a predetermined space may be provided between each of the gas flow adjusting members 5100a to 5100d and the interposition members as a space for accumulating or collecting fine particles such as relatively heavy solid fine particles during the movement of the gas or by-products.

As described above, since the gas flow control parts 5000a to 5000d are installed on the first to fourth side walls 1111a to 1111d, respectively, a flow passage through which gas flows toward the exhaust part 6000 as an outer area of the edge frame 4000 may be narrowed. Specifically, when the support 2100 for the cleaning chamber 1000 is lowered so that the edge frame 4000 can face the first to fourth gas flow regulating members 5100a to 5100d of the first to fourth gas flow controlling portions 5000a to 5000d, the cleaning gas located above the edge frame 4000 moves downward to pass through the narrow spacing spaces (flow passages) between the respective first to fourth gas flow regulating members 5100a to 5100d and the edge frame 4000. And, the gas passing between the first to fourth gas flow adjusting members 5100a to 5100d and the edge frame 4000 passes through the narrow spaces between the respective first to fourth mounting portions 5200a to 5200d and the support 2100.

Therefore, the surface area in the case where the first to fourth gas flow control parts 5000a to 5000d are provided may be smaller than the surface area in the case where the first to fourth gas flow control parts 5000a to 5000d are not provided, compared to the surface area of the flow path through which the gas located above the edge frame 4000 moves to the bottom side of the edge frame 4000. That is, the surface area of the flow passage through which the gas located above the edge frame 4000 moves to the bottom side of the edge frame 4000 is reduced by the first to fourth gas flow regulators 5100a to 5100 d. Therefore, the velocity in the case where the first to fourth gas flow control parts 5000a to 5000d are provided may be lower than that in the case where the first to fourth gas flow control parts 5000a to 5000d are not provided, as compared to the velocity at which the gas injected from the injection part 3000 moves or leaves to the bottom side of the edge shelf 4000. Therefore, when the first to fourth gas flow control parts 5000a to 5000d are provided, the time during which the gas stays between the injection part 3000 and the edge shelf 4000 may be increased compared to the case where the first to fourth gas flow control parts 5000a to 5000d are not provided. This is because the first to fourth gas flow control portions 5000a to 5000d serve to restrict the gas between the injection portion 3000 and the edge shelf 4000.

In addition, since the residence time of the gas between the injection part 3000 and the edge frame 4000 is increased by the gas flow control part 5000, the cleaning efficiency can be improved. That is, when the gas flow control part 5000 is provided, the time during which the gas stays between the injection part 3000 and the edge shelf 4000 may be increased compared to the case where the gas flow control part 5000 is not provided. Accordingly, the amount of the cleaning gas injected into the chamber 1000 may be reduced. In other words, when the first to fourth gas flow control parts 5000a to 5000d are provided, the chamber may be cleaned with a smaller injection amount of the cleaning gas than in the case where the first to fourth gas flow control parts 5000a to 5000d are not provided.

In addition, since the gas flow control portions 5000a to 5000d (i.e., the gas flow adjusting members 5100a to 5100d) are installed on other regions except the corners C1 to C4 of the side wall 1110, the amount of gas moving toward the corners C1 to C4 can be increased. As shown in fig. 3 and 6, this is because when the edge frame 4000 descends to face the first to fourth gas flow regulating members 5100a to 5100d, the respective corners C1 to C4 where the gas flow regulating members are not provided and the spacing distance between the edge frame 4000 is greater than the spacing distance between the respective gas flow regulating members 5100a to 5100d and the edge frame 4000 to increase the amount of gas moving toward the corners C1 to C4. That is, the flow passage between the respective central regions AC1, AC2, AC3, AC4 of the side walls 1111a to 1111d and the edge frame 4000 is narrowed by the gas flow regulating members 5100a to 5100d installed at the central regions AC1, AC2, AC3, AC4 of the side walls 1111a to 1111d, and thus the amount of gas passing through the flow passage can be increased by the narrowed flow passage. Therefore, the gas that does not pass through the flow passages between the respective center regions AC1, AC2, AC3, AC4 of the narrowed side walls 1111a to 1111d and the edge shelf 4000 flows toward the corners C1 to C4 to which the gas flow adjusting members 5100a to 5100d are not provided. Therefore, the amount of gas passing between the corners C1-C4 of the sidewall 1110 and the edge frame 4000 is increased. For this reason, when the cleaning gas is injected into the chamber 1000, since the amount of the cleaning gas directed toward the corners C1 to C4 of the chamber 1000 is increased, impurities adhering to the corners C1 to C4 can be easily removed to prevent the occurrence of cleaning defects at the corners C1 to C4.

Also, since the top surface of each of the first to fourth gas flow adjusting members 5100a to 5100d is provided as the inclined surface SL inclined downward toward the support 2100, the gas between the edge shelf 4000, the support 2100, and the injection part 3000 may easily move to pass through the outer space of the edge shelf 4000 when a process of treating the substrate S is performed. That is, when the gas moves downward to pass through the outer space of the edge frame 4000, the flow may be smoother.

In the above description, it has been described that the gas flow control portion 5000 is provided to include the gas flow regulating member 5100 and the mounting portion 5200. However, the gas flow control portion 5000 may be provided such that the gas flow adjuster 5100 and the mounting portion 5200 are integrated with each other.

In addition, the gas flow regulating member 5100 and the mounting portion 5200 may be provided in an independent manner. That is, the gas flow adjuster 5100 may have a profile in which the bottom thereof extends toward the edge shelf 4000 and the support 2100, and may be provided with a profile that does not overlap with the edge shelf 4000 in the width direction. In addition, the mounting member 5210 of the mounting portion 5200 may be disposed below the gas flow adjuster 5100 and may be provided to extend from the side wall 1110 toward the support 2100. In this case, the mounting member 5210 may be provided to extend such that a portion thereof overlaps with the edge frame 4000 in the width direction.

The gas flow regulating members 5100a to 5100d according to the above-described embodiments continuously extend along the side walls 1111a to 1111 d. However, the gas flow modifier is not limited thereto, and may be provided in a shape discontinuously extending along the sidewall as shown in fig. 7. That is, each of the first to fourth gas flow adjusting members 5100a to 5100d may be provided to include a plurality of blocks 5110 aligned in the extending direction of the side walls 1111a to 1111d and separated from each other. In addition, the top surface of each block 5110 may be provided as an inclined surface SL having a height decreasing from the side wall toward the inner space of the cavity 1000.

According to the gas flow adjusting members 5100a to 5100d, gas can pass through the space between these blocks 5110. That is, gas may pass through the space between each of the gas flow adjusting members 5100a to 5100d and the edge frame 4000 and the space between the blocks 5110 constituting the gas flow adjusting members 5100a to 5100 d.

In the above embodiments, the remote plasma generator has been described as being connected to the chamber 1000. However, the embodiment is not limited thereto, and the substrate processing apparatus may be changed to a direct plasma apparatus using plasma generated by exciting gas inside the chamber 1000. That is, the rf power may be applied to generate plasma between the injection part 3000 and the support 2100 by using the injection part 3000 and the support 2100 as electrodes.

In the above embodiments, support 2100 and edge frame 4000 may be provided as separate elements, and support 2100 and edge frame 4000 may be separated from each other when edge frame 4000 is mounted or disposed on mounting portion 5200.

However, the embodiment is not limited thereto, and as shown in a modified example in fig. 8, the support itself may be provided to include the edge frame described in the embodiment. That is, as shown in fig. 8, the support 2100 may be disposed to face the injection part 3000 inside the chamber 1000 and may include a support member 2110 on the top surface of which the substrate S is disposed and an edge rest 2120 disposed above the support member 2110 to extend outward in the width direction from the edge of the support member 2110. Herein, for convenience of description, the support 2100 has been described as being composed of the support member 2110 and the edge frame 2120, but the support member 2110 and the edge frame 2120 may be provided to be integrated with each other.

Further, unlike the foregoing embodiment, the gas flow control portion 5000 according to the modified example may not include the mounting portion 5200. That is, the gas flow control portion 5000 may include a plurality of gas flow regulators 5100a to 5100d and may not include the mounting portions 5200a to 5200 d.

Here, the edge rest 2120 of the support 2100 according to the modified example has a similar shape and function to the edge rest 4000 according to the above-described embodiment. That is, the edge shelf 2120 of the support 2100 according to the modified example may be provided with a profile extending from the support member 2110 to the outside of the support member 2110 in the width direction such that the substrate S disposed on the support member 2110 is exposed and disposed above the support member 2110. That is, as shown in fig. 8, the edge shelf 2120 may have a hollow shape that shields an edge of the top surface of the support member 2110 on which the substrate S is mounted and exposes the remaining area.

An edge shelf 2120 is provided extending from the edge of the support member 2110 towards the sidewall 1110 of the cavity 1000. Thus, a portion of the edge shelf 2120 faces the support member 2110, and the remaining portion is disposed outside the support member 2110. That is, a portion of the edge shelf 2120 overlaps the support member 2110 in the width direction, and the remaining portion of the edge shelf 4000 is disposed outside the support member 2110 in the width direction.

In this modified example, when the support 2100 is disposed at the first height such that the top surface of the support 2100 is disposed above the gas flow regulating members 5100a to 5100d, the respective side walls 1111a to 1111d of the cavity 1000 or the gas flow regulating members 5100a to 5100d may be provided to be separated from the side surfaces of the support 2100 by a first gap. Also, when the support 2100 is disposed at the second height such that the top surface of the support 2100 is disposed below the top surface of each of the gas flow adjusters 5100a to 5100d, the respective gas flow adjusters 5100a to 5100d and the side surfaces of the support 2100 may be provided to be separated from each other by a second gap. In this case, the second height is less than the first height, and the second gap is less than the first gap. And, the second gap may be about 0.5mm to about 2 mm.

Since the support 2100 according to the modified example includes the support member 2110 and the edge frame 2120, the above-described gas may be described again in the following manner. When the support member 2110 is disposed at the first height such that the top surface of the edge support 2120 is disposed above the gas flow modifiers 5100a through 5100d, the respective side walls 1111a through 1111d of the cavity 1000 or the gas flow modifiers 5100a through 5100d may be provided to be separated from the side surfaces of the edge support 2120 by a third gap. Also, when the support member 2110 is disposed at the second height such that the top surface of the edge support 2120 is disposed below the top surface of each of the gas flow modifiers 5100 a-5100 d, the side surfaces of each of the gas flow modifiers 5100 a-5100 d and the edge support 2120 may be provided to be separated from each other by a fourth gap. In this case, the second height is less than the first height, and the fourth gap is less than the third gap. And, the fourth gap may be about 0.5mm to about 2 mm.

Hereinafter, an operation of the substrate processing apparatus according to an embodiment will be described with reference to fig. 1 to 6.

First, the support 2100 is lowered so that the edge frame 4000 and the mask M mounted on the edge frame can be mounted on the respective first to fourth gas flow control portions 5000 (gas flow control portions 5000a to 5000d) of the mounting portion 5200 (mounting portions 5200a to 5200 d). Then, the support 2100 is further lowered to separate the support 2100 from the edge frame 4000. Then, after the substrate S is disposed on the support 2100, the support 2100 may be raised. Here, after the support 2100 or the substrate S contacts the mask M, the edge frame 4000 is separated from the mounting portion 5200 as shown in fig. 1 and 5, and then the support 2100 is raised to be disposed above the gas flow adjuster 5100. In addition, the support 2100 is raised such that the substrate S is disposed at a target height.

When the height of the support 2100 or the substrate S is adjusted, a gas for processing the substrate, such as a gas for deposition (hereinafter, referred to as a deposition gas), may be injected into the chamber 1000. For this, a deposition gas is supplied to a vessel 8100 disposed outside the chamber 1000, and then a radio frequency power is applied to the coil 8200. Accordingly, the deposition gas is excited inside the container 8100 to generate plasma, and the excited deposition gas is supplied between the injection part 3000 of the chamber 1000 and the cover 1200 through the supply pipe 9000. The deposition gas is downwardly injected through a plurality of holes provided in the injection part 3000.

At least a portion of the deposition gas injected to the bottom side of the injection part 3000 reaches the substrate S disposed on the support 2100 and is deposited to form a thin film on the substrate S. Here, a thin film is formed on a region exposed by the mask M in the substrate S. That is, a thin film having a default pattern is formed on the substrate S.

When the thin film is formed on the substrate S in this manner, a thin film having a uniform thickness can be formed on the entire substrate S. That is, the thickness of the thin film formed at the corners of the top surface of the substrate S and the thickness of the thin film formed at the remaining regions may be uniform.

This is because the amount of the deposition gas moving toward the corners of the substrate S is increased by the gas flow control part 5000 disposed below the edge shelf 4000 during the deposition process. That is, the flow passages between the respective center regions AC1, AC2, AC3, AC4 of the first to fourth sidewalls 1111a to 1111d and the edge shelf 4000 are narrowed by the gas flow adjusting members 5100a to 5100d disposed therebetween, and the flow passages between the respective corners C1 to C4 of the side walls 1110 and the edge shelf 4000 become relatively large, and thus the amount of deposition gas moving toward the corners C1 to C4 of the side walls 1110 is increased.

Therefore, when the gas flow control parts 5000a to 5000d are installed, the amount of the deposition gas directed toward the corners of the substrate S may be increased and the deposition gas may be uniformly spread over the entire top surface of the substrate S, compared to the case where the gas flow control parts 5000a to 5000d are not installed. Accordingly, a thin film having a uniform thickness may be formed on the top surface of the substrate S.

When the thin film deposition is completed, the substrate S is unloaded to the outside of the chamber 1000. For this, first, as shown in fig. 2, the support 2100 is lowered to mount the edge frame 4000 and the mask M mounted on the edge frame 4000 on the mounting portion 5200. Also, when the support 2100 is further lowered, the support 2100 is separated from the edge frame 4000 and the mask M. Then, after separating the substrate S from the support 2100, the separated substrate S is unloaded to the outside of the chamber 1000.

In the above description, in the process of depositing a thin film on a substrate, as shown in fig. 5, the process is performed in a state where the edge frame 4000 is raised to be disposed above the gas flow regulator 5100. However, the embodiment is not limited thereto, and the deposition process may be performed in a state where the position of the edge frame 4000 is adjusted such that the edge frame 4000 faces the gas flow adjusting member 5100 in the width direction as shown in fig. 6.

In this case, the first to fourth gas flow regulators 5100a to 5100d restrict the deposition gas between the injection part 3000 and the edge shelf 4000, and the time during which the deposition gas stays between the injection part 3000 and the edge shelf 4000 is increased. Accordingly, the time for the diffused deposition gas to move between the injection part 3000 and the edge shelf 4000 is increased, and thus the amount of the deposition gas reaching the corners C1 to C4 of the sidewall 1110 is increased. Therefore, the thin film may be formed such that the thickness of the substrate S is uniform at the center portion and the corners.

The deposition process as described above may be performed continuously a plurality of times. And, the deposition process is performed a plurality of times or a predetermined number of times, and the inside of the chamber 1000 is cleaned. In order to clean the chamber 1000, as shown in fig. 3 and 6, the edge frame 4000 is positioned to face the gas flow regulating member 5100 in the width direction.

If the edge frame 4000 and the mask M are mounted on the mounting portion 5200 and the support 2100 is in a state where the support 2100 is separated from and located under the edge frame 4000 and the mask M, the support 2100 is lifted. Here, the edge frame 4000 is separated from the top side of the mounting portion 5200, and the height of the edge frame 4000 is adjusted such that the gas flow adjuster 5100 is disposed between the side wall 1110 and the edge frame 4000. Therefore, the surface area of the flow channel outside the edge frame 4000 in the width direction is adjusted. That is, the flow path between the edge frame 4000 and the region except the corners C1 to C4 of the side wall 1110 is narrowed. That is, the flow passages between the respective center regions AC1, AC2, AC3, AC4 of the first to fourth sidewalls 1111a to 1111d and the edge shelf 4000 are narrowed by the gas flow adjusting members 5100a to 5100d disposed therebetween.

When the height of the edge frame 4000 is adjusted in this manner, the cleaning gas may be injected into the chamber 1000. For this, a cleaning gas is supplied to the container 8100 disposed outside the chamber 1000, and then radio frequency power is applied to the coil 8200. Accordingly, the cleaning gas is excited inside the container 8100 to generate plasma, and the excited cleaning gas is supplied between the injection part 3000 of the chamber 1000 and the cover 1200 through the supply pipe 9000. The cleaning gas is ejected downward through a plurality of holes provided in the ejection portion 3000.

The cleaning gas injected into the chamber 1000 through the injection part 3000 reacts with impurities deposited or adhered to the support 2100 and the sidewall of the chamber 1000, and thus the impurities are separated from the support 2100, the sidewall of the chamber, etc. due to such reaction and discharged through the exhaust part.

As described above, since the chamber 1000 is cleaned in a state where the gas flow modifier 5100 is disposed between the sidewall 1110 and the edge frame 4000, the cleaning efficiency is improved. This is because the first to fourth gas flow regulators 5100a to 5100d restrict the purge gas between the spouting portion 3000 and the edge frame 4000, and the time during which the purge gas stays between the spouting portion 3000 and the edge frame 4000 increases. Therefore, when the time during which the cleaning gas stays between the jetting part 3000 and the edge frame 4000 increases, the time during which the cleaning gas moves between the jetting part 3000 and the edge frame 4000 in a diffused manner increases. Therefore, the cleaning gas can reach the corners C1-C4 of the sidewall 1110, and thus the cleaning defects at the corners C1-C4 can be prevented. In addition, when the residence time of the cleaning gas between the injection part 3000 and the edge frame 4000 is increased, the time for the impurities and the cleaning gas to react with each other is increased. Therefore, when the gas flow adjusting members 5100a to 5100d are provided, the cavity 1000 can be cleaned with a smaller injection amount of cleaning gas than in the case where the gas flow adjusting members 5100a to 5100d are not provided, thereby improving cleaning efficiency.

In addition, since the gas flow adjusting members 5100a to 5100d are installed on other regions than the corners C1 to C4 of the side wall 1110, the amount of gas moving toward the corners C1 to C4 may be increased. Accordingly, the flow passage between the respective central regions AC1, AC2, AC3, AC4 of the first to fourth sidewalls 1111a to 1111d and the edge shelf 4000 may be narrowed by the gas flow adjusting members 5100a to 5100d disposed therebetween, and thus the amount of the cleaning gas moving toward the corners C1 to C4 may be increased. Therefore, the impurities adhered to the corners C1 to C4 can be easily cleaned to prevent the cleaning defects from occurring at the corners C1 to C4.

According to the utility model discloses an embodiment, the multiplicable time that makes gas move between injection portion and support piece, and the gaseous volume of moving towards the corner of cavity can increase. Therefore, a corner cleaning defect can be prevented from occurring, and a thin film having a uniform thickness can be formed on the substrate. In addition, because the substrate or chamber is processed with a relatively small amount of gas, the process efficiency of processing the substrate or chamber may be improved.

Although the substrate processing apparatus has been described with reference to specific embodiments, it is not limited thereto. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the scope or spirit of the invention as defined in the appended claims.

Claims

1. A substrate processing apparatus for processing a substrate, comprising:

a cavity;

a support member disposed inside the chamber to support the substrate; and

a gas flow control part installed on one side wall of the cavity body to be arranged between the side wall of the cavity body and one side surface of the support piece along the periphery of the support piece,

wherein the gas flow control part comprises an inclined surface inclined relative to the side surface of the support part.

2. A substrate processing apparatus for processing a substrate, comprising:

a cavity;

a support member disposed inside the chamber to support the substrate; and

wherein the gas flow control part comprises an inclined surface inclined relative to the side surface of the support part,

when the supporting member is disposed at a first height relative to a bottom of the chamber, the side surface of the supporting member is separated from the sidewall or the gas flow control portion of the chamber by a first gap, and

when the supporting piece is arranged at a second height relative to the bottom of the cavity, the side surface of the supporting piece is separated from the side wall of the cavity or the gas flow control part by a second gap,

the second height is smaller than the first height, and the second gap is smaller than the first gap.

3. The substrate processing apparatus of claim 1 or 2, further comprising an edge shelf disposed above the support and provided to extend outward from an edge of the support, and

the gas flow control portion includes the inclined surface inclined to face a side surface of the edge frame.

4. The substrate processing apparatus of claim 1, wherein a side of an edge frame is separated from the sidewall or the gas flow control portion of the chamber by a third gap when the support is disposed at a first height relative to a bottom of the chamber, and wherein

When the supporting member is disposed at a second height relative to the bottom of the chamber, the side of the edge frame is separated from the gas flow control portion by a fourth gap,

wherein the second height is less than the first height, and the fourth gap is less than the third gap.

5. The substrate processing apparatus of claim 3, wherein the gas flow control portion has an outer shape such that a bottom portion of the gas flow control portion extends to overlap the edge frame in a width direction.

6. The substrate processing apparatus according to claim 1 or 2, wherein the gas flow control portion comprises:

a gas flow regulating member mounted on a central region of the sidewall except for an edge thereof in a width direction of the sidewall; and

a mounting member extending from a bottom of the gas flow modifier toward the support member.

7. The substrate processing apparatus of claim 2, wherein the second gap is in a range of 0.5mm to 2 mm.

8. The substrate processing apparatus of claim 4, wherein the fourth gap is in a range of 0.5mm to 2 mm.

9. The substrate processing apparatus of claim 6, wherein the gas flow modifier comprises a plurality of blocks arranged along the width direction of the sidewall and separated from each other.

10. The substrate processing apparatus of claim 1 or 2, wherein the inclined surface is provided at an angle of 30 ° to 60 ° with respect to an extension line parallel to the support.