CN117685870A - Angle sensor - Google Patents
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- CN117685870A CN117685870A CN202410153911.1A CN202410153911A CN117685870A CN 117685870 A CN117685870 A CN 117685870A CN 202410153911 A CN202410153911 A CN 202410153911A CN 117685870 A CN117685870 A CN 117685870A
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Abstract
The application provides an angle sensor. The angle sensor includes: two sense half-bridges; the bridge arm of any one of the sensing half-bridges is formed by the difference of the magnetization directions of two series or parallel reference layersThe magnetization direction of a reference layer of the magnetic resistance unit on one bridge arm of the same sensing half bridge is opposite to the magnetization direction of a reference layer of the corresponding magnetic resistance unit on the other bridge arm; the magnetic resistance units on the same half bridge have the same characteristics except the magnetization directions of the reference layers;two odd harmonic coefficients obtained by Fourier transform of a curve of which the value depends on the change of the conductance of the reluctance unit along with the angle theta of the external field、Fundamental wave coefficientAnd (2) andnot equal to. By combiningThe method is set to a specific angle to realize simultaneous elimination of 2n+1 and 2m+1 harmonic interference, and m and n are two unequal positive integers. The technical scheme provided by the invention can further improve the measurement accuracy of the existing angle sensor without increasing the cost and the area of the angle sensor chip.
Description
Technical Field
The application relates to the technical field of magnetic sensors, in particular to a high-precision angle sensor capable of eliminating harmonic interference.
Background
Magnetic sensors are widely used in modern electronic systems to measure physical parameters such as current, position, direction, etc. with the strength of an induced magnetic field. Currently, magnetic sensors are mainly classified into magnetic sensors using hall elements as sensing elements, and magnetic sensors using magnetoresistive elements (including AMR, GMR, and MTJ) as sensing elements.
The magneto-resistance sensor is classified into an angle sensor, a distance sensor, a current sensor, and the like according to the use.
Among them, magnetic angle sensors based on Magnetic Tunnel Junctions (MTJs) are commonly constructed using MTJ magnetoresistive cells due to their high sensitivity, wide range of output resistances, better integration into CMOS processes, and many other attractive features. MTJ magnetoresistance typically comprises two ferromagnetic layers of different magnetic properties separated by a dielectric tunnel barrier; one of the ferromagnetic layers (the sense layer or the free layer) is soft-magnetic and its magnetization direction is aligned with the external magnetic field direction, and the other ferromagnetic layer is usually called the reference layer and its magnetization direction is required to be fixed. The MTJ magnetoresistance unit senses a relative angle between magnetization of the sensing layer and magnetization of the reference layer using a Tunnel Magnetoresistance (TMR) effect, thereby measuring a direction of an external magnetic field. The change in the relative angle between the magnetization of the sense layer and the reference layer can be reflected by measuring the change in conductivity through the MTJ magnetoresistive cell. The MTJ magnetoresistive cell conductivity is proportional to the cosine function of the relative angle between the net magnetization directions in the sense and reference layers.
The actual MTJ magnetoresistive cell, the reference layer, is not ideally stiff and is subject to a small offset or disturbance due to an external magnetic field. The sense magnetization (or free layer) will be affected by the limited stray field from the reference layer, resulting in errors in the angle of alignment of the sense magnetization in the external magnetic field, and thus in errors in the angle sensor measurement angle, reducing the angle sensor measurement accuracy.
In order to reduce the measurement angle error generated by the offset of the reference layer, the angle measurement error caused by disturbance of the reference layer is reduced by respectively arranging auxiliary half-bridges on two sensing main half-bridges of the angle sensor in the prior art. The main half bridge includes magnetoresistive elements MTJ1 and MTJ2 connected in series with each other, and the auxiliary half bridge includes magnetoresistive elements MTJ3 and MTJ4 connected in series with each other. MTJ1 and MTJ3 are in parallel, MTJ2 and MTJ4 are in parallel; the midpoint connection between the two bridge arms of the main half bridge and the auxiliary half bridge is used as a signal output end. The method is characterized in that: the reference magnetizations of magnetoresistive elements MTJ1 and MTJ3 are pinned substantially antiparallel relative to the reference magnetizations of magnetoresistive sensor elements MTJ2 and MTJ4, respectively, wherein the reference layer magnetizations between MTJ1 and MTJ3 differ by aboutThe method comprises the steps of carrying out a first treatment on the surface of the Where n is the number of harmonics to be eliminated.
The prior art eliminates a single harmonic (mainly odd harmonics) by adding an auxiliary half bridge in combination with a specific arrangement of the sense axis direction (or reference layer direction), which, although improving the measurement accuracy of the angle sensor to some extent, is limited due to interference from other odd harmonics. If the interference of other odd harmonics is further eliminated, other measures (for example, digital signal processing of the output signal is required, or other sensing bridges are further added corresponding to suppressing other odd harmonics), which greatly increases the area and manufacturing cost of the magnetoresistive sensor.
Disclosure of Invention
In view of this, the present application provides a high-precision angle sensor, which realizes that two odd harmonics are eliminated simultaneously through a specific angle setting between two serial or magnetoresistive unit reference layer magnetization directions (or sensing axis directions) of each sensing bridge arm of the same sensing half bridge, and further improves the measurement precision of the existing angle sensor on the premise of not increasing the cost and the chip area of the angle sensor.
The angle sensor provided by the invention at least comprises two sensing half-bridges; the bridge arm of each sensing half-bridge is formed by two series or parallel connection reference layers with different magnetization directionsIs formed by the magneto-resistive elements. The magnetization direction of a reference layer of a magnetic resistance unit on one bridge arm of the same sensing half bridge is opposite to the magnetization direction of a reference layer of a corresponding magnetic resistance unit on the other bridge arm; the magnetic resistance units on the same half bridge have the same characteristics except for the magnetization directions of the reference layers. />Two odd harmonic coefficients +_obtained after Fourier transformation depending on the curve of the conductance of the magneto-resistive element as a function of the angle θ of the external field>、Fundamental wave coefficient->And->Not equal to->The method comprises the steps of carrying out a first treatment on the surface of the Wherein 2n+1 and 2m+1 are harmonic times, and m and n are two unequal positive integers. By->And meanwhile, eliminating (2n+1) times and (2m+1) times interference harmonic waves of the reference layer magnetization offset of the magnetic resistance unit to the angle measurement output result. The magnetoresistive cell is an MTJ magnetoresistive cell.
Further, two of the sensing half-bridges are connected at corresponding circuit connection locationsMagnetic resistance unit reference layer magnetization direction phase differenceThe method comprises the steps of carrying out a first treatment on the surface of the One of the two sensing half-bridges is used for outputting sine signals of the external measuring magnetic field angles, and the other sensing half-bridge is used for outputting cosine signals of the external measuring magnetic field angles.
Further, the method comprises the steps of,said odd harmonic coefficients based on the conductance of said magneto-resistive element>And fundamental wave coefficient->Ratio of->、/>And fundamental wave coefficient->Ratio of->And (5) performing DOE test optimization calculation. Since we are two odd harmonics to be eliminated simultaneously (typically even harmonics do not need to be eliminated exclusively with additional reluctance settings), all odd harmonic coefficients of the conductance of all reluctance units are by default non-zero.
In practical applications, it is generally necessary to cancel the interference of 3 times and 5 times of harmonics, and for this practical case, when n=1, m=2,is not zero, is->The following relationship is satisfied:
；
wherein,。
the invention sets the magnetization direction of the test layer between two serially connected or parallel connected magnetic resistance units on the same bridge arm of the angle sensor as the phase differenceThe magnetization direction of the reference layer of the magnetic resistance unit on one bridge arm of the same sensing half bridge is different from the magnetization direction of the reference layer of the magnetic resistance unit on the other bridge arm by two or more>The method comprises the steps of carrying out a first treatment on the surface of the The magnetization directions of the two magnetic resistance unit reference layers at the corresponding circuit connection positions between the two sensing half-bridges are different by +.>. Wherein (1)>Set to be not equal to +.>And (n is a positive integer) to eliminate two odd harmonic interferences caused by the magnetization direction deviation of the reference layer of the magnetic resistance unit, thereby further improving the measurement accuracy of the existing angle sensor on the premise of not increasing the cost and the chip area of the angle sensor.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic view of an angle sensor according to an embodiment of the present invention.
Detailed Description
The following description of the technical solutions in the embodiments of the present application will be clearly and completely described with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, are intended to be within the scope of the present application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only to distinguish the description, and are not to be construed as indicating or implying relative importance.
As shown in fig. 1, in one embodiment, the angle sensor provided by the present invention includes at least a sensing half-bridge 100 and a sensing half-bridge 200.
One leg of the sense half-bridge 100 (sin signal output leg) is divided by two series or parallel (only parallel is shown in fig. 1), reference layer magnetization direction phase differenceIs composed of magnetoresistive units R1, R3 and +.>Not equal to->The method comprises the steps of carrying out a first treatment on the surface of the Wherein 2n+1 and 2m+1 are harmonic times, and m and n are two unequal positive integers. Another bridge armBy two series or parallel reference layers with a magnetization direction which differs +.>The magnetoresistive elements R2, R4 of (a). In fig. 1, F2, F3, F4 represent the reference layer magnetization directions of the magnetoresistive cells R1, R2, R3, R4, respectively. Wherein the magnetization directions of the reference layers of the magnetic resistance units R1 and R2 are opposite, and the magnetization directions of the reference layers of the magnetic resistance units R3 and R4 are opposite; the magnetoresistive elements on the sense half-bridge 100 have the same characteristics except for the reference layer magnetization direction.
Likewise, the sense half-bridge 200 (cos signal output branch) has one leg divided by two in series or parallel (only parallel is shown in FIG. 1), reference layer magnetization direction phase differenceIs composed of magnetoresistive elements R5, R7 and +.>Not equal to->The method comprises the steps of carrying out a first treatment on the surface of the The other bridge arm is formed by two serial or parallel reference layers with different magnetization directions>The magnetoresistive elements R6, R8 of (a). In fig. 1, F5, F6, F7, and F8 represent the magnetization directions of the reference layers of the magnetoresistive elements R5, R6, R7, and R8, respectively. Wherein the magnetization directions of the reference layers of the magnetic resistance units R5 and R6 are opposite, and the magnetization directions of the reference layers of the magnetic resistance units R7 and R8 are opposite. The magnetoresistive elements on the sense half-bridge 200 have the same characteristics except for the reference layer magnetization direction. The magneto-resistance units R1 and R5, R2 and R6, R3 and R7, and R4 and R8 are magneto-resistance units corresponding to each other, and the magnetization directions of reference layers between the magneto-resistance units corresponding to each other are different by 90 degrees.
Is obtained by Fourier transformation of a curve of which the value depends on the change of the conductance of the magnetic resistance unit along with the angle theta of the external fieldDigital harmonic coefficient->、/>Fundamental wave coefficient->And->Not equal to->The method comprises the steps of carrying out a first treatment on the surface of the By->The value of the (2+1) times and (2+1) times interference harmonic waves of the reference layer magnetization offset of the magnetic resistance unit to the angle measurement output result are eliminated; wherein m and n are two non-equal positive integers. The magnetoresistive cell is an MTJ magnetoresistive cell.
Taking the example of eliminating 3-order and 5-order harmonic interference brought by magnetization direction deviation of a reference layer of a magnetic resistance unit to a measuring result of an angle sensor, the principle of the technical scheme of the application is explained:
consider that there are 3 rd order and 5 th order harmonics of the external field for a curve that senses the change in MTJ magnetoresistive cell conductance G with external field angle θ in the half bridge:
；
g0, G1, G3, G5 are the fourier series developed offset, fundamental, 3 rd order harmonic and 5 th order harmonic coefficients, respectively, of the sensed half-bridge magnetoresistive cell conductance.
Angle difference of magnetization direction for reference layerA first bridge arm of the parallel connection of the two magneto-resistive elements of (a) with a corresponding total conductance of +.>：
；
The simplification is as follows:
；
because the reference direction of the corresponding magneto-resistive element of the other bridge arm of the sensing half-bridge is 180 degrees different from the magnetization direction of the reference layer of the corresponding magneto-resistive element in the first bridge arm, correspondingly, the total conductance of the other bridge arm is：
；
The reference layer magnetization directions of the magnetic resistance units (such as R1 and R5, R2 and R6, R3 and R7, and R4 and R8 in figure 1) at the corresponding bridge arm positions on the two sensing half-bridges of the angle sensor are differentThe two sensing half-bridges form a Wheatstone push-pull full bridge as one output of the angle sensor>：
Order theCoefficient substitution and overall scaling of the above are performed (n is a positive integer):
。
another output of the angle sensor can be obtained(output cos signal):
。
the output value θ of the angle sensor can be obtained by tangent operation:
；
it can be seen that the angle value θ output by the angle sensor is not exactly equal to the actual rotation angle θ.
If θ is constant equal to θ, a determination is made as to whether or not there isMake->Is constantly zero. If such->The derivative g' (θ) of g (θ) is equal to 0. Therefore, derivative operation is performed on g (θ):
order theAfter calculation, the method comprises the following steps of:
obviously, when the following relational expression is satisfied, g' (θ) is equal to 0, and thus θ is equal to θ.
。
Substituting the obtained formula into the verification, simply deriving as follows, and outputting in two paths
；
The method comprises the steps of carrying out a first treatment on the surface of the At this time, an arctangent operation was performed:
。
from this, the following conclusion can be reached: the angle difference of the two parallel pinning layers isCan completely eliminate the influence of 3 rd order and 5 th order harmonics, wherein +.>Satisfies the following formula:
in the method, in the process of the invention,，/>the ratio of the 3 rd order and 5 th order harmonic coefficients to the fundamental coefficient, respectively. Obviously, when only the elimination of two of the odd harmonics is considered, it is possible for the other odd harmonics not to be considered, likewise +.>Two odd harmonic coefficients +_obtained after Fourier transformation depending on the curve of the conductance of the magneto-resistive element as a function of the angle θ of the external field>、/>Respectively with the fundamental wave coefficient->Ratio of (2), and->Not equal to->。
Further, for the specific case of eliminating the 3 rd order and 5 th order harmonic coefficients, the solution is performed by using the octave formula：
Order the，/>The method comprises the steps of carrying out a first treatment on the surface of the Will->And (3) simplifying to obtain:
；
；
when there is no harmonic of order 5,then->Then->=30°. Obviously, attention is paid to the fact that 5 th order harmonics exist, let +.>Using the root equation, x can be solved:
；
wherein, t is 0, ++ infinity); further solving to obtain∈[18°,30°]Belonging to the angle interval of eliminating 3 times and 5 times of harmonic wave independently.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes and substitutions are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (5)
1. An angle sensor, characterized in that the angle sensor comprises two sensing half-bridges; the bridge arm of each sensing half-bridge is formed by two series or parallel connection reference layers with different magnetization directionsIs composed of magnetic resistance units; the magnetization direction of a reference layer of a magnetic resistance unit on one bridge arm of the same sensing half bridge is opposite to the magnetization direction of a reference layer of a corresponding magnetic resistance unit on the other bridge arm; the magnetic resistance units on the same half bridge have the same characteristics except the magnetization directions of the reference layers; />Two odd harmonic coefficients +_obtained after Fourier transformation depending on the curve of the conductance of the magneto-resistive element as a function of the angle θ of the external field>、/>Fundamental wave coefficient->And->Not equal to->Wherein 2n+1 and 2m+1 are harmonic frequencies, and m and n are two unequal positive integers; by->And (2) eliminating interference harmonic wave of (2n+1) times and (2m+1) times of the reference layer magnetization direction offset of the magnetic resistance unit to the angle measurement output result.
2. The angle of claim 1A sensor is characterized in that the magnetization directions of two reference layers of a magnetic resistance unit at the corresponding circuit connection position between the two sensing half-bridges are differentThe method comprises the steps of carrying out a first treatment on the surface of the One of the two sensing half-bridges is used for outputting sine signals of the external measuring magnetic field angles, and the other sensing half-bridge is used for outputting cosine signals of the external measuring magnetic field angles.
3. An angle sensor according to claim 2, wherein,said odd harmonic coefficients based on the conductance of said magneto-resistive element>And fundamental wave coefficient->Ratio of->、/>And fundamental wave coefficient->Ratio of->And (5) performing DOE test optimization calculation.
4. The angle sensor according to claim 3, wherein when n=1, m=2,is not zero, is->The following relationship is satisfied:
the method comprises the steps of carrying out a first treatment on the surface of the Wherein (1)>。
5. The angle sensor of any of claims 1-4, wherein the magnetoresistive cell is an MTJ magnetoresistive cell.
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| CN215639260U (en) * | 2021-06-04 | 2022-01-25 | 江苏多维科技有限公司 | Magnetic resistance circuit structure and angle sensor |
| CN216977753U (en) * | 2021-04-30 | 2022-07-15 | 江苏多维科技有限公司 | Magnetic resistance circuit structure and angle sensor |
| CN116087588A (en) * | 2023-04-11 | 2023-05-09 | 江苏多维科技有限公司 | Current sensor for resisting external field interference |
| CN116148732A (en) * | 2023-04-04 | 2023-05-23 | 江苏多维科技有限公司 | Magnetic grid sensor |
-
2024
- 2024-02-04 CN CN202410153911.1A patent/CN117685870B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63225124A (en) * | 1987-03-14 | 1988-09-20 | Hitachi Ltd | Magnetic position detector |
| JPH10253729A (en) * | 1997-03-10 | 1998-09-25 | Matsushita Electric Ind Co Ltd | Magnetic sensor and manufacture thereof |
| CN1754080A (en) * | 2003-02-24 | 2006-03-29 | Hl-平面技术有限公司 | Magnetoresistive sensor for determining an angle or a position |
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| CN216977753U (en) * | 2021-04-30 | 2022-07-15 | 江苏多维科技有限公司 | Magnetic resistance circuit structure and angle sensor |
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| CN116087588A (en) * | 2023-04-11 | 2023-05-09 | 江苏多维科技有限公司 | Current sensor for resisting external field interference |
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