CN116148732B - Magnetic grid sensor - Google Patents
Magnetic grid sensor Download PDFInfo
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- CN116148732B CN116148732B CN202310347780.6A CN202310347780A CN116148732B CN 116148732 B CN116148732 B CN 116148732B CN 202310347780 A CN202310347780 A CN 202310347780A CN 116148732 B CN116148732 B CN 116148732B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/095—Magnetoresistive devices extraordinary magnetoresistance sensors
Abstract
The invention discloses a high-precision and anti-interference magnetic grid sensor. The magnetic grid sensor at least comprises a magnetic resistance unit formed by connecting two equivalent magnetic resistances in series or in parallel. And taking any one period arrangement direction of magnetic gate magnetic poles as a reference direction, wherein the magnetic sensitivity coefficients of two equivalent magnetic resistors of the magnetic resistance unit are equal, the magnetic sensitivity direction of one equivalent magnetic resistor is parallel to the reference direction, and the sensitivity direction of the other equivalent magnetic resistor is antiparallel to the reference direction. The two equivalent magnetic resistances of the magnetic resistance unit are arranged along a preset direction, so that the resistance value of the magnetic resistance unit changes along with the change of the magnetic field of the magnetic grid at the position of the magnetic resistance unit along the preset direction. The magnetic grid sensor provided by the invention not only can weaken the interference of an external magnetic field, but also can eliminate specific harmonic waves in the magnetic grid sensor by combining the position arrangement between two equivalent magnetic resistors, so that the output measurement signal is improved, and the measurement precision is improved.
Description
Technical Field
The invention relates to the technical field of magnetic field sensing/measurement, in particular to a high-precision and anti-interference magnetic grid sensor.
Background
Among the existing magnetic sensors, the magnetic grating sensor is a type of magnetic sensor specially used for measuring a periodic magnetic field, and is widely applied to gear measurement, distance measurement and the like.
Fig. 1 is a schematic diagram of detection of a common magnetic grating sensor matched with a magnetic grating ruler. The whole detection system mainly comprises a magnetic grid ruler 1 with N, S magnetic poles alternately arranged and a magnetic head 3 positioned above the magnetic grid. Typically 8 magnetic resistors 2 are included in the head 3. As shown in FIG. 2, 8 magnetoresistors 2 are divided into four groupsTwo paths of parallel Wheatstone full bridges are formed, and four groups of magneto resistors are R1, R2, R3 and R4 respectively. The first Wheatstone full bridge is composed of two groups of magnetic resistors R1 and R3, and the second Wheatstone full bridge is composed of two groups of magnetic resistors R2 and R4. In the ideal case, when the magnetic grid distance corresponds to the arrangement distance of the magnetic resistors, namely the distance between the adjacent magnetic resistor groups isThe magnetic grid distance L is such that the phase difference between adjacent magnetic resistors is +.>And (3) a period. The magnetic field distribution along the direction of the arrangement of the magnetic poles above the magnetic grid ruler 1 shows periodic variation. When the magnetic head 3 runs along the length direction of the magnetic grid ruler 1, the magneto resistor 2 inside the magnetic head 3 can sense a periodically-changing magnetic field and output a corresponding sine and cosine change signal. And calculating the length displacement vector value based on the output sine and cosine change signals.
However, due to the fact that some disturbing magnetic fields exist in the real measurement environment, phase jitter/movement and even distortion are generated in the two signals output when the magnetic head 3 is used for detecting the magnetic grid, and corresponding errors are generated in the subsequent calculation result. In addition, another factor affecting the subsequent calculation results comes from the wheatstone full bridge itself, and since the output signal of the wheatstone full bridge structure has odd and even harmonics which are not needed in the subsequent calculation process and can deteriorate the signal instruction, the existence of the harmonics can also have a certain influence on the accuracy of the subsequent calculation results.
Disclosure of Invention
The invention aims to provide a high-precision and anti-interference magnetic grid sensor so as to improve the quality of output sine and cosine signals and solve or partially solve the technical problems of poor anti-interference capability and insufficient measurement precision under the action of an interference magnetic field in the prior art.
The technical scheme provided by the invention is realized by the following steps:
the magnetic grid sensor is characterized by at least comprising a magnetic resistance unit formed by connecting two equivalent magnetic resistances in series or in parallel; the magneto-sensitivity coefficients of the two equivalent magneto-resistors of the magneto-resistance unit are equal in size and opposite in direction; and taking any one period arrangement direction of the magnetic grid magnetic poles as a reference direction, and arranging two equivalent magnetic resistors of the magnetic resistance unit along the reference direction to enable the resistance value of the magnetic resistance unit to change along with the change of the magnetic grid magnetic field on the position of the magnetic grid magnetic poles in the reference direction. The equivalent magnetic resistor is realized as one magnetic resistor, or a plurality of magnetic resistors are connected in series, in parallel or in series-parallel. The type of magneto-resistive element belongs to the XMR including TMR, AMR, GMR, CMR, SMR.
Preferably, the distance between the two equivalent magnetoresistors of the magnetoresistive element along the reference direction is set toN is an even number greater than 2, L is a magnetic grid distance, or the distance between two equivalent magnetoresistors of the magnetoresistive element in the reference direction is set to +.>N is an odd number greater than 1, and L is the magnetic grid distance.
Further, the magnetic grid sensor comprises a first half-bridge composed of two magnetic resistance units, wherein the first magnetic resistance unit and the second magnetic resistance unit are respectively used as one arm of the half-bridge, and an output signal of the half-bridge is led out from between the two magnetic resistance units; the first equivalent magnetic resistance of the first magnetic resistance unit and the first equivalent magnetic resistance of the second magnetic resistance unit are opposite in sensitivity direction in the reference direction, phases of the detected magnetic grid magnetic fields are the same, and the second equivalent magnetic resistance of the first magnetic resistance unit and the second equivalent magnetic resistance of the second magnetic resistance unit are opposite in sensitivity direction in the reference direction, and phases of the detected magnetic grid magnetic fields are the same.
Further, the magnetic grid sensor comprises a second half-bridge composed of two magnetic resistance units, wherein the first magnetic resistance unit and the second magnetic resistance unit are respectively used as one arm of the half-bridge, and an output signal of the half-bridge is led out from between the two magnetic resistance units; the first equivalent magnetic resistance of the first magnetic resistance unit and the first equivalent magnetic resistance of the second magnetic resistance unit are the same in the sensitive direction of the reference direction, the phases of the detected magnetic grid magnetic fields are 180 degrees different, the second equivalent magnetic resistance of the first magnetic resistance unit and the second equivalent magnetic resistance of the second magnetic resistance unit are the same in the sensitive direction of the reference direction, and the phases of the detected magnetic grid magnetic fields are 180 degrees different.
Further, the magnetic grid sensor comprises at least one Wheatstone full bridge; one half bridge of the at least one wheatstone full bridge is the first half bridge or the second half bridge, and the other half bridge is the first half bridge or the second half bridge; the two half-bridge output waveform signals of the wheatstone full bridge have different phases.
Preferably, said magnetic grid sensor comprises two sets of said wheatstone full bridges; wherein, the magnetic resistance units R1 and R5, R2 and R6, R3 and R7, and R4 and R8 respectively form a first magnetic sensor, a second magnetic sensor, a third magnetic sensor and a fourth magnetic sensor; the phases of the magnetic grid magnetic fields detected by the two magnetic resistance units in the same magneto-sensitive element are the same, and a group of paired arms of the Wheatstone full bridge are formed; the magneto-resistive units of the first magneto-sensitive element and the third magneto-sensitive element form a first Wheatstone full bridge, and the magneto-resistive units of the second magneto-sensitive element and the fourth magneto-sensitive element form a second Wheatstone full bridge; the first, second, third and fourth magneto-sensitive elements are arranged at equal intervals along the reference direction in sequence in space.
Further, the magnetic grid sensor at least comprises one Wheatstone full bridge, wherein one half bridge of the at least one Wheatstone full bridge is the first half bridge or the second half bridge, and the other half bridge is the first half bridge or the second half bridge; the two half-bridge output waveform signals of the wheatstone full bridge have different phases. Preferably, the spacing isL is the magnetic grid distance.
According to the invention, the magneto-resistance units on the four arms of the Wheatstone full bridge in the existing magnetic grid sensor are replaced by two linear magneto-resistors with the same sensitivity coefficient and opposite sensitivity directions in parallel/series connection, so that the influence of an interference magnetic field in a measuring environment is eliminated, and the quality and measuring precision of an output signal of the magnetic grid sensor are improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of detection of a magnetic grating sensor matched with a magnetic grating ruler in the prior art.
Fig. 2 is a schematic circuit diagram of a conventional magnetic grid sensor.
FIG. 3 is a schematic diagram of a magnetoresistive cell used in a magnetic gate sensor according to the present invention in one embodiment.
FIG. 4 is a schematic diagram of a magnetoresistive cell used in a magnetic gate sensor according to another embodiment of the invention.
Fig. 5 is a schematic diagram of a half-bridge circuit in an embodiment of a magnetic grid sensor according to the present invention.
Fig. 6 is a schematic diagram of a half-bridge circuit in another embodiment of a magnetic grid sensor according to the present invention.
FIG. 7 is a schematic diagram of an embodiment of a magnetic grid sensor provided by the present invention.
Detailed Description
The technical solutions of the present invention will be clearly and completely described in connection with the embodiments, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It will be understood by those skilled in the art that all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs unless defined otherwise. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless expressly stated otherwise, as understood by those skilled in the art. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. The term "and/or" as used herein includes all or any element and all combination of one or more of the associated listed items.
As shown in fig. 3, the magnetic grid sensor provided by the invention at least comprises a magnetic resistance unit Rx formed by connecting two equivalent magnetic resistors Rx1 and Rx2 in series. The magnetic sensitivity coefficients of the two equivalent magnetic resistors Rx1 and Rx2 of the magnetic resistance unit Rx are equal in magnitude and opposite in direction by taking any one of the periodic arrangement directions of the magnetic gate poles as a reference direction (all the reference directions are defined as the reference directions). The equivalent magneto-resistors Rx1 and Rx2 are arranged along the reference direction, so that the resistance value of the magneto-resistance unit changes along with the change of the magnetic grid magnetic field at the position of the magneto-resistance unit in the reference direction. The equivalent magneto resistors Rx1, rx2 shown in FIG. 3 are each implemented as one magneto resistor, or are connected in series, parallel/series-parallel by several magneto resistors. The type of magneto-resistive element belongs to the XMR including TMR, AMR, GMR, CMR, SMR.
In fig. 3, the magneto-resistive unit Rx is formed by connecting equivalent magneto-resistors Rx1 and Rx2 in series. For the output signal of the magneto-resistive element Rx, one can calculate as follows:
for the magnetoresistive cell in FIG. 3, it can be considered that the phase angles of the respective sensitivity directions corresponding to the periodic magnetic field of the magnetic grid at the positions of the two equivalent magnetoresistors Rx1, rx2 are respectivelyAnd->. As shown by short arrow lines in Rx1 and Rx2 in fig. 3, rx1 and Rx2 are two equivalent magnetoresistors with equal magnetic susceptibility and opposite sensitivity directions in the reference direction (shown by long arrow line M1 in fig. 3)>For the resistance values presented by Rx1, rx2 in the zero-field state (the opposite sense direction, the case not in the reference direction only affects the initial phase angle, the latter calculation still applies), the>The magnitude of the component of the magnetic grid field in the sensitive direction. The resistance of Rx is therefore:
；
。
considering that there is an external field disturbance in the actual test, it is assumed here that the component of the external disturbance magnetic field in the direction along the reference direction is(assuming that the magnetosensitive direction is consistent with that of the equivalent magnetostriction Rx 1), K is the magnetosensitive coefficient size (absolute value) of the equivalent magnetostriction Rx1, rx2 along the reference direction. At this time, the resistance values of Rx1 and Rx2 are respectively:
；
。
the effective resistance after Rx1 and Rx2 are connected in series is as follows:
（1）
the effective resistance Reff does not contain an interfering magnetic field. Notably->Should not be 0 (otherwise, reff is a fixed value and cannot be sensed), at this time, the resistance value of the magnetoresistive element Rx changes with the change of the magnetic grid field in the reference direction and at the position of itself. Correspondingly, it is required that D is not an integer multiple of the magnetic spacing L.
Of course, each of the magneto-resistive units Rx may be formed by parallel connection of the equivalent magneto-resistors Rx1 and Rx2, and the respective sensitivity directions of the equivalent magneto-resistors Rx1 and Rx2 are shown by short arrow lines in Rx1 and Rx2 in fig. 4. At this time, the effective conductance of R1x and Rx2 after parallel connection is the sum of the two conductances. Since the external disturbing magnetic field has a component in the direction along the periodic variation of the magnetic grid magnetic field (shown by the long arrow line M1 in FIG. 4) of(assuming the same sensitivity direction as the equivalent magnetoresistance Rx 1) the difference in influence on the denominator of each magnetic conductance (inverse of resistance)>Absolute value of (2) compared to->The absolute value of this term is small (K is the absolute value of the magnetosensitive coefficient of the equivalent magnetoresistors Rx1, rx 2), and the term approximation can be reserved once after the Taylor series expansion. At this time, the component of the disturbing magnetic field can be eliminated after the addition of the conductances of Rx1, rx2 +.>At the same time reflects the magnitude of the component of the magnetic grid magnetic field in the sensitive direction>. The corresponding calculation process is not described here again.
Preferably, in order to eliminate a specific even harmonic in the resistance variation of the magnetoresistive unit Rx, the distance of the two equivalent magnetoresistors Rx1, rx2 of the magnetoresistive unit Rx in the reference direction is set toN is an even number greater than 2, and L is the magnetic grid distance.
If the magnetic field phase angle at the equivalent magnetic resistance Rx1 isThe position distance D of the equivalent magnetic resistors Rx1 and Rx2 is set to be(n is an even number greater than 2), and taking the external magnetic field and the n-order harmonic into consideration, the series expansion is performed on Rx1 and Rx 2:
；
；
the effective resistance after the equivalent magneto-resistors Rx1 and Rx2 are connected in series is as follows:
（2）
k is the magnetic susceptibility (absolute value) of the equivalent magnetic resistors Rx1 and Rx 2. From the formula (2)The distance between the equivalent magneto-resistors Rx1, rx2 along the reference direction is set to be(n is an even number greater than 2), the effective resistance Reff of the serial connection of the equivalent magnetic resistors Rx1 and Rx2 does not contain the component of the external interference magnetic field along the reference direction as followsAnd an n-order harmonic error.
Preferably, in order to eliminate a specific even harmonic in the resistance variation of the magnetoresistive unit Rx, the distance of the two equivalent magnetoresistors Rx1, rx2 of the magnetoresistive unit Rx in the reference direction is set toN is an odd number greater than 1 (the harmonic to be eliminated is the n-th harmonic), and L is the magnetic grid distance. At this time, the external magnetic field and the n-order harmonic are considered, and the series expansion is performed on Rx1 and Rx 2:
；
；
the effective resistance after the equivalent magneto-resistors Rx1 and Rx2 are connected in series is as follows:
（3）
from equation (3), it can be seen that the distance of the equivalent magnetoresistors Rx1, rx2 along the reference directionIs arranged asAfter n is an odd number greater than 1, the effective resistance Reff of the series connection of the magneto resistors Rx1 and Rx2 does not contain the component of the external interference magnetic field in the reference direction as +.>And an n-order harmonic error.
Obviously, the setting method for eliminating odd or even harmonics is also applicable to the situation that two equivalent magnetoresistors of each magnetoresistive unit Rx are connected in parallel. At this time, the effective conductance of Rx1 and Rx2 after parallel connection is the sum of both conductances. Due to disturbing magnetic fieldsInfluence of the denominator on each magneto-conductivity (inverse of resistance)>Is compared with the absolute value of (a)The absolute value of this term is small and the term approximation can be preserved once after expansion with a taylor series. The effective conductance values of Rx1, rx2 are about +.>The sign of this term (i.e. the primary term) is opposite, and the effect of the external disturbing magnetic field can still be eliminated after the conductances of the two terms are added. The corresponding calculation process is not described here again.
In one embodiment as shown in fig. 5, the magnetic gate sensor provided by the present invention includes a half-bridge circuit formed by using the above-mentioned magnetoresistive cells. The first and second magneto-resistive elements R1, R2 are each used as one arm of the half-bridge, and the output signal of the half-bridge is led out from between the two magneto-resistive elements R1, R2. The first equivalent magnetic resistor R11 of the first magnetoresistive unit R1 and the first equivalent magnetic resistor R21 of the second magnetoresistive unit have opposite magnetosensitive directions along the reference direction (indicated by the long arrow connection M1 in fig. 5) (indicated by the short arrow connection in fig. 5R 1 and R2), and the phases of the detected magnetic grating fields are the same. The second equivalent magnetic resistance R12 of the first magnetic resistance unit R1 and the second equivalent magnetic resistance R22 of the second magnetic resistance unit R2 are opposite in magnetosensitive direction along the periodic variation direction of the magnetic grid magnetic field, and the phases of the detected magnetic grid magnetic fields are the same. At this time, it is only necessary to ensure that the spatial positions of R11 and R21 are identical or are spaced apart by an even number of magnetic pitches L along the reference direction, and that the spatial positions of R12 and R22 are identical or are spaced apart by an even number of magnetic pitches L along the reference direction.
In another embodiment as shown in fig. 6, the magnetic gate sensor provided by the present invention includes a half-bridge circuit formed by using the above-mentioned magnetoresistive cells. The first and second magneto-resistive elements R1, R2 are each used as one arm of the half-bridge, and the output signal of the half-bridge is led out from between the two magneto-resistive elements R1, R2. The first equivalent magnetic resistance R11 of the first magnetoresistive unit R1 and the first equivalent magnetic resistance R21 of the second magnetoresistive unit have the same magnetosensitive direction along the reference direction (indicated by the long arrow line M1 in fig. 6), and the detected magnetic grating fields have 180 degrees phase difference (the respective directions of sensitivity of R11 and R21 are indicated by the short arrow lines in R1 and R2 in fig. 6). The second equivalent magnetic resistance R12 of the first magnetoresistive unit R1 and the second equivalent magnetic resistance R22 of the second magnetoresistive unit R2 are identical in magnetosensitive direction along the reference direction, and the phases of the detected magnetic grid fields are 180 degrees different. At this time, it is only necessary to ensure that the R11 and R21 spatial positions are the same along the reference direction with an odd number of magnetic pitches L therebetween, and that the R12 and R22 spatial positions are along the reference direction with an odd number of magnetic pitches L therebetween.
In another embodiment, the magnetic grid sensor provided by the present invention may further be implemented to include at least one wheatstone full bridge: the at least one wheatstone full bridge is composed of two half bridges, one half bridge of the at least one wheatstone full bridge is the first half bridge or the second half bridge, and the other half bridge is the first half bridge or the second half bridge; the two half-bridge output waveform signals of the wheatstone full bridge have different phases.
In the embodiment shown in fig. 7, the magnetic grid sensor comprises two sets of the wheatstone full bridges of magnetoresistive elements R1-R8. Wherein, the magnetic resistance units R1 and R5, R2 and R6, R3 and R7, and R4 and R8 respectively form a first magnetic sensor, a second magnetic sensor, a third magnetic sensor and a fourth magnetic sensor. The embodiment shown in fig. 7 has magnetoresistive elements R1-R8 that are uniform along the sensitive direction in the reference direction. In this embodiment, the phases of the magnetic grating fields detected by the two magneto-resistive units in the same magneto-sensitive element are the same, and the trend of the resistances along with the change of the magnetic grating fields is the same (i.e. the spatial positions of the two magneto-resistive units in the same magneto-sensitive element are the same or are spaced by an even number of magnetic grating distances L along the reference direction), so as to form a set of paired arms of the wheatstone full bridge. As shown in FIG. 7, the magneto-resistive units of the second magneto-sensitive element and the fourth magneto-sensitive element form a second Wheatstone full bridge. The first, second, third and fourth magneto-sensitive elements are arranged at equal intervals along the reference direction in sequence in space.
Preferably, the interval is set to be that the output signals of the two-way Wheatstone full bridge are respectively sine signals and cosine signalsL is the magnetic grid distance. The first Wheatstone full bridge and the second Wheatstone full bridge are connected in parallel. Of course, the two-way wheatstone full bridge may also be connected to the corresponding power source and ground respectively. For example, the first Wheatstone full bridge is between a first power source and ground, and the second Wheatstone full bridge is between a second power source and ground.
In the description of the present invention, it should be understood that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (8)
1. A magnetic grating sensor, characterized in that the magnetic grating sensor comprises a first half-bridge composed of two magneto-resistive units, the first magneto-resistive unit and the second magneto-resistive unit are respectively used as one arm of the half-bridge, and the output signal of the half-bridge is led out from between the two magneto-resistive units;
the magnetic resistance unit is formed by connecting two equivalent magnetic resistors in series or in parallel; the magneto-sensitivity coefficients of the two equivalent magneto-resistors of the magneto-resistance unit are equal in size and opposite in direction; taking any one period arrangement direction of magnetic grid magnetic poles as a reference direction, and arranging two equivalent magnetic resistors of the magnetic resistance unit along the reference direction to enable the resistance value of the magnetic resistance unit to change along with the change of the magnetic grid magnetic field on the position of the magnetic grid magnetic poles in the reference direction;
the first equivalent magnetic resistance of the first magnetic resistance unit and the first equivalent magnetic resistance of the second magnetic resistance unit have opposite sensitivity directions in the reference direction, the phases of the detected magnetic grid magnetic fields are the same, and the second equivalent magnetic resistance of the first magnetic resistance unit and the second equivalent magnetic resistance of the second magnetic resistance unit have opposite sensitivity directions in the reference direction, and the phases of the detected magnetic grid magnetic fields are the same; or the first equivalent magnetic resistance of the first magnetic resistance unit and the first equivalent magnetic resistance of the second magnetic resistance unit have the same sensitivity direction in the reference direction, the phases of the detected magnetic grid magnetic fields are 180 degrees different, the second equivalent magnetic resistance of the first magnetic resistance unit and the second equivalent magnetic resistance of the second magnetic resistance unit have the same sensitivity direction in the reference direction, and the phases of the detected magnetic grid magnetic fields are 180 degrees different.
2. The magnetic grid sensor according to claim 1, wherein the equivalent magnetic resistance is realized as one magnetic resistance or by several magnetic resistances connected in series, parallel/series-parallel.
3. The magnetic grid sensor of claim 2, wherein the magnetoresistive cell is of the type XMR including TMR, AMR, GMR, CMR, SMR.
4. A magnetic grid sensor according to any one of claims 1 to 3 comprising at least one wheatstone full bridge consisting of two said first half-bridges, the two half-bridges of said wheatstone full bridge output waveform signals being of different phases.
5. The magnetic grid sensor of claim 4 comprising two sets of said wheatstone full bridges; wherein, the magnetic resistance units R1 and R5, R2 and R6, R3 and R7, and R4 and R8 respectively form a first magnetic sensor, a second magnetic sensor, a third magnetic sensor and a fourth magnetic sensor; the phases of the magnetic grid magnetic fields detected by the two magnetic resistance units in the same magneto-sensitive element are the same, and a group of paired arms of the Wheatstone full bridge are formed; the magneto-resistive units of the first magneto-sensitive element and the third magneto-sensitive element form a first Wheatstone full bridge, and the magneto-resistive units of the second magneto-sensitive element and the fourth magneto-sensitive element form a second Wheatstone full bridge; the first, second, third and fourth magneto-sensitive elements are arranged at equal intervals along the reference direction in sequence in space.
6. The magnetic grid sensor of claim 5, wherein the first and second wheatstone full bridges are connected in parallel, or the first wheatstone full bridge is between power supply 1 and ground and the second wheatstone full bridge is between power supply 2 and ground.
7. The magnetic grid sensor according to claim 1, wherein a distance between two equivalent magnetoresistors of the magnetoresistive unit in the reference direction is set toN is an even number greater than 2, and L is the magnetic grid distance.
8. The magnetic grid sensor according to claim 1, wherein a distance between two equivalent magnetoresistors of the magnetoresistive unit in the reference direction is set toN is an odd number greater than 1, and L is the magnetic grid distance.
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| CN215639260U (en) * | 2021-06-04 | 2022-01-25 | 江苏多维科技有限公司 | Magnetic resistance circuit structure and angle sensor |
| CN115754848A (en) * | 2022-11-17 | 2023-03-07 | 江苏多维科技有限公司 | Magnetic sensor |
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| CN116148732A (en) | 2023-05-23 |
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