CN117682842A - 一种ntc热敏电阻组合波瓷料及其制备方法 - Google Patents
一种ntc热敏电阻组合波瓷料及其制备方法 Download PDFInfo
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- 229910052573 porcelain Inorganic materials 0.000 title description 3
- 238000000227 grinding Methods 0.000 claims abstract description 91
- 238000005245 sintering Methods 0.000 claims abstract description 43
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 32
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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Abstract
本发明涉及热敏电阻材料制备技术领域,具体涉及一种NTC热敏电阻组合波瓷料及其制备方法。本发明提供的NTC热敏电阻陶瓷料的制备方法,包括如下步骤:将二氧化锰、三氧化二镍和氧化铝进行混合研磨,研磨结束后进行第一次烧结,然后进行二次研磨,得到烧结混合料;将烧结混合料和六氟磷酸铵混合,然后在含有水蒸汽的氮气气氛下进行三次研磨;将三次研磨料进行第二次烧结,然后将烧结料进行四次研磨,得到四次研磨料;将四次研磨料压片,等静压处理,然后进行保温处理,得到所述NTC热敏电阻陶瓷料。本发明提供的制备方法获得的电阻陶瓷料具有较低的室温电阻率,且材料的温度常数基本不变甚至略有升高。
Description
技术领域
本发明涉及热敏电阻材料制备技术领域,具体涉及一种NTC热敏电阻组合波瓷料及其制备方法。
背景技术
热敏电阻陶瓷料根据性质的不同,一般分为正温度系数热敏电阻陶瓷料和负温度系数(NTC)热敏电阻陶瓷料,正温度系数热敏电阻陶瓷料其电阻率随温度升高而增大,负温度系数热敏电阻陶瓷料其电阻率随温度升高而降低。NTC热敏电阻陶瓷料作为电子材料的重要组成部分,其广泛应用于汽车、通讯、家用电器、红外检测等领域。
NTC热敏电阻陶瓷料一般采用金属元素例如锰、镍、钴、铁、铝等氧化物制备而成,其中以锰氧化物、镍氧化物、铝氧化物作为原料制备的热敏电阻陶瓷料其不仅具有负温度系数效应,且还具有较高的温度常数,受到广泛的关注,然而由锰氧化物、镍氧化物、铝氧化物作为原料制备的热敏电阻陶瓷料其室温电阻率偏高,限制了材料的应用范围。
发明内容
为了克服现有由锰氧化物、镍氧化物、铝氧化物作为原料制备的热敏电阻陶瓷料其室温电阻率偏高的缺陷,进而提供一种NTC热敏电阻组合波瓷料及其制备方法。
为达到上述目的,本发明采用如下技术方案:
一种NTC热敏电阻陶瓷料的制备方法,包括如下步骤:
1)将二氧化锰、三氧化二镍和氧化铝进行混合研磨,研磨结束后将混合粉末进行第一次烧结,第一次烧结结束后进行二次研磨,得到烧结混合料;
2)将烧结混合料和六氟磷酸铵混合,然后在含有水蒸汽的氮气气氛下进行三次研磨,得到三次研磨料;
3)将三次研磨料进行第二次烧结,然后将烧结料进行四次研磨,得到四次研磨料;
4)将四次研磨料压片,然后在200-260MPa压力下等静压处理,然后进行保温处理,得到所述NTC热敏电阻陶瓷料。
优选地,步骤1)中二氧化锰、三氧化二镍和氧化铝的质量比为(60-65):(30-33):(7-9)。
优选地,步骤1)中混合研磨转速为150-250rpm,混合研磨时间为1-5h,二次研磨转速为150-250rpm,二次研磨时间为1-5h。
优选地,步骤1)中第一次烧结温度为900-1000℃,第一次烧结时间为2-5h。
优选地,步骤2)中六氟磷酸铵的加入质量为二氧化锰质量的4-7.5%,含有水蒸汽的氮气气氛中水蒸汽的体积占比为15-20%。
优选地,步骤2)中三次研磨转速为150-250rpm,三次研磨时间为0.5-5h。
优选地,步骤3)中第二次烧结温度为900-1000℃,第二次烧结时间为2-5h。
优选地,步骤3)中四次研磨转速为150-250rpm,四次研磨时间为1-5h。
优选地,步骤4)中等静压处理时间为80-120s。
优选地,步骤4)中保温处理温度为1020-1100℃,保温处理时间为3-8h。
本发明还提供一种NTC热敏电阻组合波瓷料,由上述所述的制备方法制备得到。
本发明的有益效果:
本发明提供的NTC热敏电阻陶瓷料的制备方法,首先由二氧化锰、三氧化二镍和氧化铝进行混合研磨,烧结,二次研磨,获得烧结混合料,然后将烧结混合料和六氟磷酸铵混合,在含有水蒸汽的氮气气氛下进行三次研磨,通过在水蒸汽氛围下进行研磨,六氟磷酸铵部分分解形成六氟磷酸,在六氟磷酸诱导下尖晶石相表面形成类岩盐相,并在类岩盐相中掺杂一定浓度氟、磷元素,增加电子电导,进而降低陶瓷料的室温电阻率,经过后续的烧结,等静压等处理,获得的电阻陶瓷料不仅具有负温度系数效应,而且具有较低的室温电阻率,且材料的温度常数基本不变甚至略有升高。
附图说明
为了更清楚地说明本发明具体实施方式或现有技术中的技术方案,下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图是本发明的一些实施方式,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明实施例1制备的NTC热敏电阻陶瓷料的电阻率随温度变化的特征图。
具体实施方式
提供下述实施例是为了更好地进一步理解本发明,并不局限于所述最佳实施方式,不对本发明的内容和保护范围构成限制,任何人在本发明的启示下或是将本发明与其他现有技术的特征进行组合而得出的任何与本发明相同或相近似的产品,均落在本发明的保护范围之内。
实施例中未注明具体实验步骤或条件者,按照本领域内的文献所描述的常规实验步骤的操作或条件即可进行。所用试剂或仪器未注明生产厂商者,均为可以通过市购获得的常规试剂产品。
实施例1
本实施例提供一种NTC热敏电阻陶瓷料的制备方法,包括如下步骤:
1)将61g二氧化锰、32g三氧化二镍和8g氧化铝进行混合研磨,研磨转速为200rpm,研磨时间为1.5h,研磨结束后将混合粉末在960℃下烧结3.0h,烧结结束后进行二次研磨,研磨转速为180rpm,研磨时间为1.5h,得到烧结混合料;
2)将烧结混合料和3.5g六氟磷酸铵混合,然后在含有水蒸汽的氮气气氛(水蒸汽的体积占比为20%)下进行三次研磨,研磨转速为170rpm,研磨时间为0.5h,得到三次研磨料;
3)将三次研磨料在980℃下烧结3h,然后将烧结料进行四次研磨,研磨转速为200rpm,研磨时间为1.5h,得到四次研磨料;
4)将四次研磨料压片,然后在250MPa压力下等静压100秒,1050℃下保温6h,得到所述NTC热敏电阻陶瓷料。
实施例2
本实施例提供一种NTC热敏电阻陶瓷料的制备方法,包括如下步骤:
1)将61g二氧化锰、32g三氧化二镍和8g氧化铝进行混合研磨,研磨转速为200rpm,研磨时间为1.5h,研磨结束后将混合粉末在950℃下烧结2.5h,烧结结束后进行二次研磨,研磨转速为200rpm,研磨时间为1.5h,得到烧结混合料;
2)将烧结混合料和3g六氟磷酸铵混合,然后在含有水蒸汽的氮气气氛(水蒸汽的体积占比为15%)下进行三次研磨,研磨转速为150rpm,研磨时间为0.5h,得到三次研磨料;
3)将三次研磨料在960℃下烧结3h,然后将烧结料进行四次研磨,研磨转速为200rpm,研磨时间为1.5h,得到四次研磨料;
4)将四次研磨料压片,然后在250MPa压力下等静压90秒,1050℃下保温6h,得到所述NTC热敏电阻陶瓷料。
实施例3
本实施例提供一种NTC热敏电阻陶瓷料的制备方法,包括如下步骤:
1)将61g二氧化锰、32g三氧化二镍和8g氧化铝进行混合研磨,研磨转速为200rpm,研磨时间为1.5h,研磨结束后将混合粉末在960℃下烧结3.5h,烧结结束后进行二次研磨,研磨转速为180rpm,研磨时间为1.5h,得到烧结混合料;
2)将烧结混合料和4.0g六氟磷酸铵混合,然后在含有水蒸汽的氮气气氛(水蒸汽的体积占比为20%)下进行三次研磨,研磨转速为170rpm,研磨时间为1.5h,得到三次研磨料;
3)将三次研磨料在980℃下烧结4h,然后将烧结料进行四次研磨,研磨转速为200rpm,研磨时间为3h,得到四次研磨料;
4)将四次研磨料压片,然后在250MPa压力下等静压120秒,1050℃下保温6h,得到所述NTC热敏电阻陶瓷料。
对比例1
本对比例提供一种NTC热敏电阻陶瓷料的制备方法,包括如下步骤:
1)将61g二氧化锰、32g三氧化二镍和8g氧化铝进行混合研磨,研磨转速为200rpm,研磨时间为1.5h,研磨结束后将混合粉末在950℃下烧结2.5h,烧结结束后进行二次研磨,研磨转速为200rpm,研磨时间为1.5h,得到烧结混合料;
2)将烧结混合料在960℃下烧结3h,然后将烧结料进行研磨,研磨转速为200rpm,研磨时间为1.5h,得到研磨料;
3)将研磨料压片,然后在250MPa压力下等静压90秒,1050℃下保温6h,得到所述NTC热敏电阻陶瓷料。
对比例2
本对比例提供一种NTC热敏电阻陶瓷料的制备方法,其与实施例2相比区别在于步骤2)中将烧结混合料和3g六氟磷酸铵混合,然后在氮气气氛下进行三次研磨,研磨转速为150rpm,研磨时间为0.5h,得到三次研磨料。
对比例3
本对比例提供一种NTC热敏电阻陶瓷料的制备方法,其与实施例2相比区别在于步骤2)中将烧结混合料和0.68g氟化铵、2.12g质量分数为85%的磷酸水溶液混合,然后在含有水蒸汽的氮气气氛(水蒸汽的体积占比为15%)下进行三次研磨,研磨转速为150rpm,研磨时间为0.5h,得到三次研磨料。
测试例
对上述实施例和对比例制备得到的热敏电阻陶瓷料进行测试,测试结果如表1所示。
表1
25℃电阻率kΩ·mm | 材料常数K | |
实施例1 | 104 | 4193 |
实施例2 | 105 | 4190 |
实施例3 | 102 | 4194 |
对比例1 | 112 | 4185 |
对比例2 | 110 | 4186 |
对比例3 | 109 | 4183 |
由上述实施例和对比例可以看出,本发明通过将烧结混合料和六氟磷酸铵混合,然后在含有水蒸汽的氮气气氛下进行三次研磨,可以有效降低陶瓷料的室温电阻率,同时获得陶瓷料基本不变甚至略高于未经上述处理的陶瓷料。
显然,上述实施例仅仅是为清楚地说明所作的举例,而并非对实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动,显而易见的变化或变动仍处于本发明创造的保护范围之中。
Claims (10)
1.一种NTC热敏电阻陶瓷料的制备方法,其特征在于,包括如下步骤:
1)将二氧化锰、三氧化二镍和氧化铝进行混合研磨,研磨结束后将混合粉末进行第一次烧结,第一次烧结结束后进行二次研磨,得到烧结混合料;
2)将烧结混合料和六氟磷酸铵混合,然后在含有水蒸汽的氮气气氛下进行三次研磨,得到三次研磨料;
3)将三次研磨料进行第二次烧结,然后将烧结料进行四次研磨,得到四次研磨料;
4)将四次研磨料压片,然后在200-260MPa压力下等静压处理,然后进行保温处理,得到所述NTC热敏电阻陶瓷料。
2.根据权利要求1所述的NTC热敏电阻陶瓷料的制备方法,其特征在于,步骤1)中二氧化锰、三氧化二镍和氧化铝的质量比为(60-65):(30-33):(7-9)。
3.根据权利要求1或2所述的NTC热敏电阻陶瓷料的制备方法,其特征在于,步骤1)中混合研磨转速为150-250rpm,混合研磨时间为1-5h,二次研磨转速为150-250rpm,二次研磨时间为1-5h。
4.根据权利要求1所述的NTC热敏电阻陶瓷料的制备方法,其特征在于,步骤1)中第一次烧结温度为900-1000℃,第一次烧结时间为2-5h。
5.根据权利要求1所述的NTC热敏电阻陶瓷料的制备方法,其特征在于,步骤2)中六氟磷酸铵的加入质量为二氧化锰质量的4-7.5%,含有水蒸汽的氮气气氛中水蒸汽的体积占比为15-20%。
6.根据权利要求1所述的NTC热敏电阻陶瓷料的制备方法,其特征在于,步骤2)中三次研磨转速为150-250rpm,三次研磨时间为0.5-5h。
7.根据权利要求1所述的NTC热敏电阻陶瓷料的制备方法,其特征在于,步骤3)中第二次烧结温度为900-1000℃,第二次烧结时间为2-5h。
8.根据权利要求1所述的NTC热敏电阻陶瓷料的制备方法,其特征在于,步骤3)中四次研磨转速为150-250rpm,四次研磨时间为1-5h。
9.根据权利要求1所述的NTC热敏电阻陶瓷料的制备方法,其特征在于,步骤4)中等静压处理时间为80-120s;
步骤4)中保温处理温度为1020-1100℃,保温处理时间为3-8h。
10.一种NTC热敏电阻组合波瓷料,其特征在于,由权利要求1-9任一项所述的制备方法制备得到。
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020020949A1 (en) * | 1999-08-30 | 2002-02-21 | Kaoru Kuzuoka | Thermistor element |
CN1619717A (zh) * | 2003-11-20 | 2005-05-25 | 中国科学院新疆理化技术研究所 | 一种锰掺杂的负温度系数单晶硅热敏电阻 |
US20090165289A1 (en) * | 2007-12-26 | 2009-07-02 | Deng Wen-How | Method for fabricating negative temperature coefficient thermistor |
JP2010280829A (ja) * | 2009-06-05 | 2010-12-16 | Daiso Co Ltd | 高分子感温体組成物 |
US20110303909A1 (en) * | 2009-02-20 | 2011-12-15 | Agency For Science, Technology And Research | Planar conjugated compounds and their applications for organic electronics |
CN105917265A (zh) * | 2014-01-17 | 2016-08-31 | 伊英克公司 | 具有双相电极层的电光显示器 |
CN108329015A (zh) * | 2016-05-06 | 2018-07-27 | 中南大学 | 一种掺杂改性氧化镍基ntc热敏电阻材料及其制备方法 |
CN112479681A (zh) * | 2020-11-24 | 2021-03-12 | 青岛三元传感技术有限公司 | 一种负温度系数热敏电阻芯片及其制备方法 |
CN114999752A (zh) * | 2022-05-27 | 2022-09-02 | 广东新成科技实业有限公司 | 一种基于半导体材料的ntc贴片热敏电阻及其制备方法 |
-
2023
- 2023-12-14 CN CN202311717641.4A patent/CN117682842B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020020949A1 (en) * | 1999-08-30 | 2002-02-21 | Kaoru Kuzuoka | Thermistor element |
CN1619717A (zh) * | 2003-11-20 | 2005-05-25 | 中国科学院新疆理化技术研究所 | 一种锰掺杂的负温度系数单晶硅热敏电阻 |
US20090165289A1 (en) * | 2007-12-26 | 2009-07-02 | Deng Wen-How | Method for fabricating negative temperature coefficient thermistor |
US20110303909A1 (en) * | 2009-02-20 | 2011-12-15 | Agency For Science, Technology And Research | Planar conjugated compounds and their applications for organic electronics |
JP2010280829A (ja) * | 2009-06-05 | 2010-12-16 | Daiso Co Ltd | 高分子感温体組成物 |
CN105917265A (zh) * | 2014-01-17 | 2016-08-31 | 伊英克公司 | 具有双相电极层的电光显示器 |
CN108329015A (zh) * | 2016-05-06 | 2018-07-27 | 中南大学 | 一种掺杂改性氧化镍基ntc热敏电阻材料及其制备方法 |
CN112479681A (zh) * | 2020-11-24 | 2021-03-12 | 青岛三元传感技术有限公司 | 一种负温度系数热敏电阻芯片及其制备方法 |
CN114999752A (zh) * | 2022-05-27 | 2022-09-02 | 广东新成科技实业有限公司 | 一种基于半导体材料的ntc贴片热敏电阻及其制备方法 |
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