CN117678067A - 包括具有悬垂的堆叠式集成器件的封装 - Google Patents

包括具有悬垂的堆叠式集成器件的封装 Download PDF

Info

Publication number
CN117678067A
CN117678067A CN202280047434.XA CN202280047434A CN117678067A CN 117678067 A CN117678067 A CN 117678067A CN 202280047434 A CN202280047434 A CN 202280047434A CN 117678067 A CN117678067 A CN 117678067A
Authority
CN
China
Prior art keywords
integrated device
substrate
interconnect
coupled
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280047434.XA
Other languages
English (en)
Chinese (zh)
Inventor
K·维穆里
J·金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN117678067A publication Critical patent/CN117678067A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/401Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/685Shapes or dispositions thereof comprising multiple insulating layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07231Techniques
    • H10W72/07236Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221Structures or relative sizes
    • H10W72/222Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/823Interconnections through encapsulations, e.g. pillars through molded resin on a lateral side a chip
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/853On the same surface
    • H10W72/856Bump connectors and die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/877Bump connectors and die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/22Configurations of stacked chips the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/24Configurations of stacked chips at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/291Configurations of stacked chips characterised by containers, encapsulations, or other housings for the stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips

Landscapes

  • Combinations Of Printed Boards (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
CN202280047434.XA 2021-07-14 2022-06-10 包括具有悬垂的堆叠式集成器件的封装 Pending CN117678067A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/375,931 US12230604B2 (en) 2021-07-14 2021-07-14 Package comprising stacked integrated devices with overhang
US17/375,931 2021-07-14
PCT/US2022/033003 WO2023287528A1 (en) 2021-07-14 2022-06-10 Package comprising stacked integrated devices with overhang

Publications (1)

Publication Number Publication Date
CN117678067A true CN117678067A (zh) 2024-03-08

Family

ID=82492810

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280047434.XA Pending CN117678067A (zh) 2021-07-14 2022-06-10 包括具有悬垂的堆叠式集成器件的封装

Country Status (7)

Country Link
US (1) US12230604B2 (enExample)
EP (1) EP4371155A1 (enExample)
JP (1) JP2024524523A (enExample)
KR (1) KR20240026484A (enExample)
CN (1) CN117678067A (enExample)
TW (1) TW202341376A (enExample)
WO (1) WO2023287528A1 (enExample)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8169058B2 (en) * 2009-08-21 2012-05-01 Stats Chippac, Ltd. Semiconductor device and method of stacking die on leadframe electrically connected by conductive pillars
US9449941B2 (en) 2011-07-07 2016-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Connecting function chips to a package to form package-on-package
US9312198B2 (en) * 2013-03-15 2016-04-12 Intel Deutschland Gmbh Chip package-in-package and method thereof
US10032722B2 (en) * 2016-05-31 2018-07-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor package structure having am antenna pattern and manufacturing method thereof
US20200006305A1 (en) * 2018-06-28 2020-01-02 Intel Corporation Integrated heterogenous power management circuitries
US11581287B2 (en) * 2018-06-29 2023-02-14 Intel Corporation Chip scale thin 3D die stacked package
TWI810380B (zh) 2019-02-22 2023-08-01 南韓商愛思開海力士有限公司 包括橋接晶粒的系統級封裝件
US11139249B2 (en) * 2019-04-01 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of forming the same

Also Published As

Publication number Publication date
US20230019333A1 (en) 2023-01-19
KR20240026484A (ko) 2024-02-28
US12230604B2 (en) 2025-02-18
EP4371155A1 (en) 2024-05-22
TW202341376A (zh) 2023-10-16
WO2023287528A1 (en) 2023-01-19
JP2024524523A (ja) 2024-07-05

Similar Documents

Publication Publication Date Title
US11201127B2 (en) Device comprising contact to contact coupling of packages
US11682607B2 (en) Package having a substrate comprising surface interconnects aligned with a surface of the substrate
KR20220149520A (ko) 더미 인터커넥트들을 포함하는 패키지
US11502049B2 (en) Package comprising multi-level vertically stacked redistribution portions
EP4158776B1 (en) Package comprising stacked filters with a shared substrate cap
US20210175178A1 (en) Package comprising a double-sided redistribution portion
US11791276B2 (en) Package comprising passive component between substrates for improved power distribution network (PDN) performance
CN115210867A (zh) 包括衬底和与其耦接的高密度互连结构的半导体封装
US20220375838A1 (en) Package comprising integrated devices coupled through a bridge
US11823983B2 (en) Package with a substrate comprising pad-on-pad interconnects
CN119768919A (zh) 包括集成器件、芯粒和金属化部分的封装
CN119072785A (zh) 包括位于金属化部分之间的互连管芯的封装件
CN119174007A (zh) 包括位于基板之间的互连管芯的封装件
US11545411B2 (en) Package comprising wire bonds configured as a heat spreader
JP2024533131A (ja) 高密度相互接続子を有する基板を備えるパッケージ
US12230604B2 (en) Package comprising stacked integrated devices with overhang
CN117642856A (zh) 包括具有屏蔽件的块状器件的封装
US11296022B2 (en) Package and substrate comprising interconnects with semi-circular planar shape and/or trapezoid planar shape
CN117256043A (zh) 包括通过金属化层耦合的集成器件的封装件
JP2024505488A (ja) 周辺相互接続を備える基板をもつパッケージ

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination