CN117673192A - Heterojunction solar cell, electrode and preparation method thereof - Google Patents

Heterojunction solar cell, electrode and preparation method thereof Download PDF

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Publication number
CN117673192A
CN117673192A CN202211043540.9A CN202211043540A CN117673192A CN 117673192 A CN117673192 A CN 117673192A CN 202211043540 A CN202211043540 A CN 202211043540A CN 117673192 A CN117673192 A CN 117673192A
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electrode
layer
induction
solar cell
conductive layer
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请求不公布姓名
周涛
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Zhuzhou Sany Silicon Energy Technology Co ltd
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Zhuzhou Sany Silicon Energy Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells

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Abstract

The invention relates to the technical field of photovoltaics, and provides a heterojunction solar cell, an electrode and a preparation method thereof, wherein the preparation method of the electrode of the heterojunction solar cell comprises the following steps: forming an induction layer on the silicon substrate formed with the transparent conductive layer; the induction layer is made of insulating materials and contains conductive elements, and is used for generating conductive materials containing the conductive elements under the induction of laser; and performing laser induction on the induction layer to form a first electrode conductive layer containing a conductive material. The technical problems of complicated electrode process, high difficulty and low efficiency of the heterojunction solar cell in the prior art are solved, the process is simplified, the electrode preparation process of the heterojunction solar cell is shortened, and the efficiency of preparing the electrode of the heterojunction solar cell is improved.

Description

Heterojunction solar cell, electrode and preparation method thereof
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a heterojunction solar cell, an electrode and a preparation method thereof.
Background
Heterojunction solar cells are a highly efficient solar cell structure. At present, in the preparation method of the electrode of the heterojunction solar cell, after the heterojunction solar cell finishes the process of transparent conductive layers such as Indium Tin Oxide (ITO), a seed layer of 60-150nm, such as a copper seed layer, is plated by adopting a physical vapor deposition (Physical Vapor Deposition, PVD) mode, a mask layer on the front side and the back side is formed by using a photosensitive material, an electrode pattern is prepared by exposure and development, after the preparation of the electrode pattern is finished, the preparation of the electrode is finished by adopting an electroless plating process, such as copper or copper and tin electrode electroplating, and finally, the preparation and the test of the electrode of the heterojunction solar cell are finished by removing the mask layer and back etching the redundant seed layer. The preparation process of the electrode of the heterojunction solar cell needs masking, exposure, development, back etching and the like, and is complex in process implementation process, high in difficulty and low in efficiency.
Disclosure of Invention
The invention provides a heterojunction solar cell, an electrode and a preparation method thereof, which are used for solving the defects of complicated electrode process, high difficulty and low efficiency of the heterojunction solar cell in the prior art, simplifying the process, shortening the electrode preparation process of the heterojunction solar cell and improving the efficiency of preparing the electrode of the heterojunction solar cell.
The invention provides a preparation method of an electrode of a heterojunction solar cell, which comprises the following steps:
forming an induction layer on the silicon substrate formed with the transparent conductive layer; the induction layer is made of insulating materials and contains conductive elements, and is used for generating conductive materials containing the conductive elements under the induction of laser;
and performing laser induction on the induction layer to form a first electrode conductive layer containing a conductive material.
According to the electrode preparation method of the heterojunction solar cell provided by the invention, an induction layer is formed on a silicon substrate with a transparent conductive layer, and the electrode preparation method comprises the following steps:
forming an entire surface-covered induction layer on a silicon substrate;
performing laser induction on the induction layer to form a first electrode conductive layer containing a conductive material, including:
and performing laser induction on the area of the induction layer corresponding to the electrode pattern to form a first electrode conductive layer containing a conductive material.
According to the method for preparing the electrode of the heterojunction solar cell, after the region corresponding to the electrode pattern of the inducing layer is subjected to laser induction to form the first electrode conducting layer containing the conducting material, the method further comprises the following steps:
and forming a second electrode conductive layer on the first electrode conductive layer by adopting an electroplating mode.
The electrode preparation method of the heterojunction solar cell provided by the invention further comprises the following steps:
and removing the area of the induction layer which is not subjected to laser induction.
According to the electrode preparation method of the heterojunction solar cell provided by the invention, an induction layer is formed on a silicon substrate with a transparent conductive layer, and the electrode preparation method comprises the following steps:
forming an induction layer on the silicon substrate in a region corresponding to the electrode pattern;
performing laser induction on the induction layer to form a first electrode conductive layer containing a conductive material, including:
and performing laser induction on the area of the induction layer corresponding to the electrode pattern to form a first electrode conductive layer containing a conductive material.
According to the electrode preparation method of the heterojunction solar cell provided by the invention, an induction layer is formed in a region corresponding to an electrode pattern on a silicon substrate, and the method comprises the following steps:
and forming an induction layer on the silicon substrate in a region corresponding to the electrode pattern by adopting a printing or silk screen printing mode.
The electrode preparation method of the heterojunction solar cell provided by the invention further comprises the following steps:
the silicon substrate on which the first electrode conductive layer is formed is sintered.
The electrode preparation method of the heterojunction solar cell provided by the invention further comprises the following steps:
a protective layer is formed on the first electrode conductive layer.
The invention also provides a preparation method of the heterojunction solar cell, which comprises the preparation method of the electrode of the heterojunction solar cell.
The invention also provides an electrode of the heterojunction solar cell, which is prepared by adopting the electrode preparation method of the heterojunction solar cell.
The invention also provides a heterojunction solar cell, which is prepared by adopting the preparation method of the heterojunction solar cell.
According to the preparation method of the electrode of the heterojunction solar cell, the induction layer is formed on the silicon substrate with the transparent conductive layer, then the induction layer is subjected to laser induction, the induction layer generates the conductive material containing the conductive element under the laser induction, and then the first electrode conductive layer containing the conductive material is formed.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for preparing an electrode of a heterojunction solar cell according to the present invention;
fig. 2 is a schematic structural diagram of a heterojunction solar cell provided by the present invention;
FIG. 3 is a second flow chart of the method for fabricating an electrode of a heterojunction solar cell according to the present invention;
fig. 4 is a schematic structural diagram of an electrode of a heterojunction solar cell provided by the invention;
FIG. 5 is a third flow chart of the method for fabricating an electrode of a heterojunction solar cell according to the present invention;
fig. 6 is a schematic diagram of a second embodiment of an electrode of a heterojunction solar cell according to the present invention.
Reference numerals:
201: a silicon substrate; 202: an intrinsic passivation layer; 203: a doped layer; 204: a transparent conductive layer; 205: an electrode; 401: a first electrode conductive layer; 402: a second electrode conductive layer; 602: and (3) a protective layer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The electrode preparation method of the heterojunction solar cell of the present invention is described below with reference to fig. 1 to 6.
Fig. 1 is a schematic flow chart of a method for preparing an electrode of a heterojunction solar cell according to the present invention.
As shown in fig. 1, the embodiment provides a method for preparing an electrode of a heterojunction solar cell, which includes:
step 101, forming an induction layer on a silicon substrate with a transparent conductive layer formed thereon; the induction layer is made of insulating materials and contains conductive elements, and is used for generating conductive materials containing the conductive elements under the induction of laser.
Step 102, performing laser induction on the induction layer to form a first electrode conductive layer containing conductive materials.
Fig. 2 is a schematic structural diagram of a heterojunction solar cell provided by the invention.
In practical applications, as shown in fig. 2, the heterojunction solar cell may include a silicon substrate 201, an intrinsic passivation layer 202 formed on both the front and back surfaces of the silicon substrate 201, a doped layer 203 formed on the intrinsic passivation layer 202, a transparent conductive layer 204 formed on the doped layer 203, and an electrode 205 formed on the transparent conductive layer 204. Here, the electrode 205 of the heterojunction solar cell includes a first electrode conductive layer.
The silicon substrate 201 may be an N-type silicon wafer or a P-type silicon wafer. If the silicon substrate is an N-type silicon wafer, the doped layer 203 on the front side of the silicon substrate 201 is an N-type doped layer, and the doped layer 203 on the back side of the silicon substrate 201 is a P-type doped layer; if the silicon substrate is a P-type silicon wafer, the doped layer 203 on the front side of the silicon substrate 201 is a P-type doped layer, and the doped layer 203 on the back side of the silicon substrate 201 is an N-type doped layer.
The transparent conductive layer may be made of transparent conductive oxide. For example, the transparent conductive layer may be made of indium tin oxide, and correspondingly, the transparent conductive layer is also called an ITO layer, and in practice, the ITO layer may be formed on the silicon substrate by PVD or sputter deposition. Of course, the transparent conductive layer may be made of tungsten doped indium oxide or aluminum doped zinc oxide, and the like, and may be selected according to the needs in practical application.
In practice, the induction layer may be formed on the transparent conductive layer by dipping or coating. The material of the induction layer is an insulating material, such as a water-insoluble viscous solution, which contains conductive elements. The coating is completed in a soaking mode, so that insulation of all areas of the heterojunction solar cell can be ensured, and the quality of the heterojunction solar cell is improved. Illustratively, the conductive element included in the inducing layer may include a metal element, for example, may include at least one of copper, nickel, titanium, silver, and gold. Illustratively, the material of the inducing layer may be a viscous solution doped with one or more of copper, copper oxide, cuprous oxide, and copper salt, for example, the material of the inducing layer may be a slurry doped with copper oxide and a reducing material, wherein the reducing material may be carbon, carbon monoxide, or formaldehyde. The inducing layer is subjected to laser induction, i.e. the inducing layer is irradiated with laser light. Under the induction of laser, the reducing material in the material of the induction layer reacts with the substance containing the conductive element to generate the conductive material containing the conductive element, and illustratively, under the induction of laser, the carbon in the material of the induction layer reacts with the copper oxide to generate the copper simple substance. Correspondingly, the conductive material containing the conductive element may include metals such as copper, nickel, titanium, silver or gold, or alloys of these metals, or may include other conductive compounds containing conductive elements such as copper, nickel, titanium, silver or gold. Copper, nickel, titanium, silver and gold have good conductivity, and are beneficial to improving the electrode performance.
In practical applications, the number of times of performing the steps 101 to 102 for forming the first electrode conductive layer may be one or more. If the first electrode conductive layer is executed once, a first electrode conductive layer is formed, if the first electrode conductive layer is executed for multiple times, a plurality of first electrode conductive layers can be formed, and specific execution times can be set according to actual thickness requirements.
If the first electrode is performed once, an induction layer can be formed on the transparent conductive layer of the silicon substrate, and then laser induction is performed on the induction layer on the transparent conductive layer to form a first electrode conductive layer.
If the first execution is performed for a plurality of times, an induction layer can be formed on the transparent conductive layer of the silicon substrate, then laser induction is performed on the induction layer on the transparent conductive layer to form a first electrode conductive layer, and when the first execution is not performed for the first time, an induction layer is formed on the first electrode conductive layer and laser induction is performed on the formed induction layer to form a new first electrode conductive layer.
For example, when the first execution is performed twice, an inducing layer may be formed on the transparent conductive layer of the silicon substrate, then the inducing layer on the transparent conductive layer is subjected to laser induction to form a first layer first electrode conductive layer, then the inducing layer is formed on the silicon substrate on which the first layer first electrode conductive layer is formed, and the inducing layer is subjected to laser induction again to form a second layer first electrode conductive layer.
In the implementation, the inducing layer is subjected to laser induction to form a first electrode conductive layer containing conductive materials, one of the modes can be that the inducing layer absorbs laser energy under the irradiation of laser to generate conductive metal simple substance or metal compound to form the first electrode conductive layer, the first electrode conductive layer has good ohmic contact and bonding force with a transparent conductive layer on a silicon substrate, and the other mode can be that other substances except the conductive materials containing conductive elements volatilize in the inducing layer under the induction of the laser, the conductive materials remain to form the first electrode conductive layer, and the first electrode conductive layer has good ohmic contact and bonding force with the transparent conductive layer on the silicon substrate.
In this embodiment, by forming the inducing layer on the silicon substrate on which the transparent conductive layer is formed, and then performing laser induction on the inducing layer, the inducing layer generates a conductive material containing a conductive element under the laser induction, so as to form a first electrode conductive layer containing the conductive element, which does not need to use the PVD seed layer plating process used in the conventional electroplating process, thereby reducing the equipment investment and bombardment damage of the transparent conductive layer.
In addition, the material used for forming the induction layer in the embodiment has insulativity and strong acid resistance, so that the induction layer is easy to clean after electroplating is finished.
In an exemplary embodiment, an inducing layer is formed on a silicon substrate formed with a transparent conductive layer, and a specific implementation thereof may include: an overall covered inducing layer is formed on a silicon substrate. Correspondingly, the inducing layer is subjected to laser induction to form a first electrode conducting layer containing a conducting material, and the specific implementation manner of the method can comprise the following steps: and performing laser induction on the area of the induction layer corresponding to the electrode pattern to form a first electrode conductive layer containing a conductive material.
In practical application, an entire covered induction layer can be formed on a silicon substrate, then, a region corresponding to the electrode pattern on the induction layer is irradiated by laser, a region not irradiated by the laser on the induction layer is still an insulated induction layer, and a conductive material with a conductive effect is generated in the region irradiated by the laser, so that a first electrode conductive layer containing the conductive material is formed.
In practice, the number of times from the step of forming the entire surface-covered inducing layer on the silicon substrate to the step of performing laser induction on the inducing layer may be one or more. If the first electrode conductive layer is executed once, a first electrode conductive layer is formed, if the first electrode conductive layer is executed for multiple times, a plurality of first electrode conductive layers can be formed, and specific execution times can be set according to actual thickness requirements.
If the method is carried out once, an induction layer covered on the whole surface can be formed on the transparent conductive layer of the silicon substrate, and laser induction is carried out on the induction layer to form a first electrode conductive layer.
If the first step is performed a plurality of times, a whole-surface covered induction layer may be formed on the transparent conductive layer of the silicon substrate and the induction layer on the transparent conductive layer may be subjected to laser induction to form a first electrode conductive layer, and when the first step is not performed a new first electrode conductive layer may be formed by forming a whole-surface covered induction layer on the first electrode conductive layer and performing laser induction on the formed induction layer.
For example, in the first execution, an entirely covered induction layer may be formed on the transparent conductive layer of the silicon substrate, then the induction layer on the transparent conductive layer is subjected to laser induction to form a first electrode conductive layer, then the entirely covered induction layer is formed on the silicon substrate on which the first electrode conductive layer is formed, and then the induction layer is subjected to laser induction again to form a second electrode conductive layer.
In this embodiment, the entire surface of the silicon substrate is covered with the inducing layer, so that the inducing layer can be rapidly formed, which is beneficial to improving the production efficiency of the electrode of the heterojunction solar cell.
In an exemplary embodiment, after performing laser induction on the area of the induction layer corresponding to the electrode pattern to form the first electrode conductive layer including the conductive material, the method may further include: and forming a second electrode conductive layer on the first electrode conductive layer by adopting an electroplating mode.
Here, the electrode of the heterojunction solar cell includes a first electrode conductive layer and a second electrode conductive layer.
In practice, the material of the second electrode conductive layer may be a metal material, and the metal material may be a metal such as copper, tin, nickel, titanium, silver, gold, or an alloy of metals, and the conductive performance of these metal materials is good, so that the electrode performance is improved. For example, copper may be electroplated on the first electrode conductive layer, or copper and tin may be electroplated.
In practical applications, if the steps from forming the whole covered inducing layer on the silicon substrate to performing laser induction on the inducing layer are performed only once, after performing laser induction to form a first electrode conductive layer, a second electrode conductive layer is formed on the first electrode conductive layer.
If the first electrode conductive layer is executed for a plurality of times, a second electrode conductive layer is formed on the last first electrode conductive layer after the last execution.
For example, in the first execution, an entirely covered induction layer may be formed on the transparent conductive layer of the silicon substrate, then the induction layer on the transparent conductive layer is subjected to laser induction to form a first layer first electrode conductive layer, then the entirely covered induction layer is formed on the silicon substrate on which the first layer first electrode conductive layer is formed, and then the induction layer is subjected to laser induction again to form a second layer first electrode conductive layer, and then the second electrode conductive layer is formed on the second layer first electrode conductive layer.
In this embodiment, the second electrode conductive layer is electroplated on the first electrode conductive layer, because the thickness of the first electrode conductive layer formed by the embodiment may be thinner, if the thickness of the first electrode conductive layer is difficult to meet the requirements of the electrodes of the heterojunction solar cell, the second electrode conductive layer can be further electroplated on the basis of the first electrode conductive layer, and the thickness of the electrodes of the heterojunction solar cell is increased, so that the prepared electrodes of the heterojunction solar cell have better conductive effect, and meanwhile, the quality of the heterojunction solar cell is also improved.
In an exemplary embodiment, the electrode preparation method of the heterojunction solar cell may further include: and removing the area of the induction layer which is not subjected to laser induction.
Specifically, the non-laser-induced conductive layer may be cleaned by a chemical solution, that is, the non-laser-induced region may be removed by wet etching, where the chemical solution may be an alkaline solution such as sodium hydroxide, and the chemical solution does not react with the first electrode conductive layer, so that the first electrode conductive layer generated in the region where laser induction is performed remains.
In practical application, no matter how many times the step of forming the whole covered inducing layer on the silicon substrate to the step of performing laser induction on the inducing layer, the step of removing the area of the inducing layer which is not subjected to laser induction is performed only once, so that the electrode preparation process of the heterojunction solar cell can be shortened, and the efficiency of preparing the electrode of the heterojunction solar cell can be improved.
In practical application, if the thickness of the generated first electrode conductive layer can meet the requirements of the electrodes of the heterojunction solar cell, directly removing the area of the induction layer which is not subjected to laser induction after the first electrode conductive layer is generated; if the thickness of the generated first electrode conductive layer is difficult to meet the electrode requirement of the heterojunction solar cell, the second electrode conductive layer can be electroplated firstly, then the area, which is not subjected to laser induction, of the induction layer is removed, and the second electrode conductive layer is not removed firstly, and then the second electrode conductive layer is electroplated, because the induction layer is made of an insulating material, and does not react with electroplating solution in the electroplating process, the second electrode conductive layer cannot be formed on the induction layer, so that the second electrode conductive layer can be formed on the first electrode conductive layer only, and if the area, which is not subjected to laser induction, of the induction layer is removed firstly, the transparent conductive layer below the induction layer is exposed, and the corresponding film layer is electroplated on the transparent conductive layer in the electroplating process, and is required to be removed again, otherwise, the quality of the heterojunction solar cell is affected.
In an exemplary embodiment, an inducing layer is formed on a silicon substrate formed with a transparent conductive layer, and a specific implementation thereof may include: an inducing layer is formed on the silicon substrate in a region corresponding to the electrode pattern.
Correspondingly, the inducing layer is subjected to laser induction to form a first electrode conducting layer containing a conducting material, and the specific implementation manner of the method can comprise the following steps: and performing laser induction on the area of the induction layer corresponding to the electrode pattern to form a first electrode conductive layer containing a conductive material.
In practical application, the induction layer is formed on the silicon substrate in the area corresponding to the electrode pattern, so that the pattern of the formed induction layer corresponds to the electrode pattern, and when laser induction is performed, the whole surface of the induction layer is irradiated by using laser, so that the requirement of irradiation of the area corresponding to the electrode pattern of the induction layer can be met.
In practice, the number of times from the step of forming the inducing layer on the region corresponding to the electrode pattern on the silicon substrate to the step of performing laser induction on the inducing layer may be one or more. If the first electrode conductive layer is executed once, a first electrode conductive layer is formed, if the first electrode conductive layer is executed for multiple times, a plurality of first electrode conductive layers can be formed, and specific execution times can be set according to actual thickness requirements.
If the first electrode conductive layer is performed once, an induction layer can be formed on the transparent conductive layer of the silicon substrate in a region corresponding to the electrode pattern, and then laser induction is performed on the induction layer on the transparent conductive layer to form a first electrode conductive layer.
If the first execution is performed for a plurality of times, an induction layer can be formed on the transparent conductive layer of the silicon substrate in the area corresponding to the electrode pattern, then laser induction is performed on the induction layer on the transparent conductive layer to form a first layer of the first electrode conductive layer, and when the first execution is not performed for the first time, the induction layer is formed on the upper layer of the first electrode conductive layer in the area corresponding to the electrode pattern, and laser induction is performed on the formed induction layer to form a new layer of the first electrode conductive layer.
For example, when the first execution is performed twice, an inducing layer may be formed on a region corresponding to the electrode pattern on the transparent conductive layer of the silicon substrate, then laser-induced to the inducing layer on the transparent conductive layer to form a first layer first electrode conductive layer, then an inducing layer is formed on a region corresponding to the electrode pattern on the silicon substrate on which the first layer first electrode conductive layer is formed, and laser-induced again to the inducing layer to form a second layer first electrode conductive layer.
In this embodiment, the induction layer is formed on the silicon substrate in the region corresponding to the electrode pattern, and the induction layer does not need to be covered on the whole surface of the silicon substrate, so that the material used for the induction layer can be saved.
In an exemplary embodiment, forming an inducing layer on a silicon substrate in a region corresponding to an electrode pattern may include: and forming an induction layer on the silicon substrate in a region corresponding to the electrode pattern by adopting a printing or silk screen printing mode.
Screen printing, that is, screen printing, refers to the process of making screen printing plate with picture and text by using screen as a plate base and adopting a photosensitive plate making method.
Because printing or silk screen printing can be accurately controlled at a designated position for printing, in the embodiment, the accurate formation of the induction layer on the silicon substrate in the area corresponding to the electrode pattern can be realized by the printing or silk screen printing mode, the thickness of the silk screen printing can reach 1000 micrometers (micrometers), the requirement of the electrode thickness of the heterojunction solar cell can be met, the induction layer is formed by the silk screen printing or printing mode, electroplating is not needed to be performed after the first electrode conducting layer is generated by laser induction, the process flow can be shortened, and the efficiency of preparing the electrode of the heterojunction solar cell is improved.
In an exemplary embodiment, the electrode preparation method of the heterojunction solar cell may further include: the silicon substrate on which the first electrode conductive layer is formed is sintered.
In practice, the bonding force between the first electrode conductive layer and the silicon substrate can be increased by sintering the silicon substrate on which the first electrode conductive layer is formed. If the bonding force between the first electrode conductive layer and the silicon substrate is sufficiently large, sintering may not be performed. The sintering can be performed at low temperature, so that the heterojunction solar cell is prevented from being damaged. The temperature used in sintering may be 80 to 180 degrees celsius (°c), and may be, for example, 120 ℃.
In this embodiment, by sintering the silicon substrate on which the first electrode conductive layer is formed, the bonding force between the first electrode conductive layer and the silicon substrate is increased, so that the first electrode conductive layer can be prevented from falling off, and the quality of the heterojunction solar cell is further improved.
In practice, the electrode pattern may be an electrode gate line, so when the inducing layer is formed on the silicon substrate by using a silk screen printing or printing method, the width of the area corresponding to the electrode gate line in the inducing layer is larger than the width of the electrode gate line, so when laser induction is performed, laser can irradiate the middle part of the area corresponding to the inducing layer and the electrode gate line, and after the low-temperature sintering process is performed, the inducing layer which is not subjected to laser induction on both sides of the area corresponding to the electrode gate line is also required to be cleaned. For example, the non-laser-induced conductive layer may be washed away by a chemical solution, that is, a chemical solution such as an alkaline solution such as sodium hydroxide, to remove the non-laser-induced region by wet etching, so that the first electrode conductive layer formed in the non-laser-induced region remains.
In practical application, no matter how many times the step of forming the inducing layer on the silicon substrate in the region corresponding to the electrode pattern is performed to the step of performing laser induction on the inducing layer, the step of removing the region where the inducing layer is not subjected to laser induction is performed only once, so that the electrode preparation process of the heterojunction solar cell can be shortened, and the efficiency of preparing the electrode of the heterojunction solar cell can be improved.
In practice, the regions of the inducing layer that are not laser-induced may be removed after the last execution.
In an exemplary embodiment, the electrode preparation method of the heterojunction solar cell may further include: a protective layer is formed on the first electrode conductive layer.
In practice, if the thickness of the first electrode conductive layer is thicker, the second electrode conductive layer can be formed without electroplating, and at this time, a protective layer can be directly formed on the first electrode conductive layer to protect the first electrode conductive layer and prevent the first electrode conductive layer from oxidation.
In practical applications, if the steps from the step of forming the inducing layer on the region corresponding to the electrode pattern on the silicon substrate to the step of performing laser induction on the inducing layer are performed only once, the protective layer is formed on the first electrode conductive layer after performing laser induction to form the first electrode conductive layer.
If the first electrode is executed for a plurality of times, a protective layer is formed on the last first electrode conductive layer after the last execution.
For example, when the first execution is performed twice, an inducing layer may be formed on a region corresponding to the electrode pattern on the transparent conductive layer of the silicon substrate, then laser-induced to the inducing layer on the transparent conductive layer to form a first layer first electrode conductive layer, then the inducing layer is formed on the region corresponding to the electrode pattern on the silicon substrate on which the first layer first electrode conductive layer is formed, and again laser-induced to the inducing layer to form a second layer first electrode conductive layer, and then a protective layer is formed on the second layer first electrode conductive layer.
The protective layer may be formed by a metal protective agent, wherein the metal protective agent is a metal protective agent corresponding to the first electrode conductive layer, and if the material of the first electrode conductive layer is copper, the metal protective agent is a copper protective agent, and the protective layer may be formed by chemical tin plating.
In this embodiment, the protective layer is formed on the first electrode conductive layer, so that the first electrode conductive layer can be effectively protected, and the first electrode conductive layer is prevented from being oxidized, thereby effectively prolonging the service life of the heterojunction solar cell.
The electrode preparation method of the heterojunction solar cell provided by the invention is described in detail below by taking a specific application scenario as an example.
In this embodiment, the heterojunction solar cell may have the structure shown in fig. 2, the silicon substrate is an N-type silicon wafer, and the transparent conductive layer may be an ITO layer, so that the doped layer on the front surface of the silicon substrate is an N-type doped layer, and the doped layer on the back surface of the silicon substrate is a P-type doped layer.
Fig. 3 is a second flow chart of the method for preparing an electrode of a heterojunction solar cell according to the present invention.
Fig. 4 is a schematic structural diagram of an electrode of a heterojunction solar cell according to the present invention.
As shown in fig. 4, the electrode of the heterojunction solar cell provided in this embodiment includes a first electrode conductive layer 401 and a second electrode conductive layer 402, and the electrode provided in fig. 4 can be prepared by the electrode preparation method provided in fig. 3.
As shown in fig. 3, the method for preparing an electrode of a heterojunction solar cell provided in this embodiment includes:
and firstly, completely and uniformly wrapping the induction layer on the transparent conductive layer on one surface of the silicon substrate in a soaking or coating mode. The material of the induction layer is an insulating material, which contains metal elements, and exemplary materials of the induction layer can be a viscous solution doped with one or more of copper, copper oxide, cuprous oxide and copper salt, for example, the material of the induction layer can be slurry doped with copper oxide and a reducing material, wherein the reducing material can be carbon, carbon monoxide or formaldehyde. The inducing layer is subjected to laser induction, i.e. the inducing layer is irradiated with laser light. Under the induction of laser, the reducing material in the material of the induction layer reacts with the substance containing the conductive element to generate the conductive material containing the conductive element, and illustratively, under the induction of laser, the carbon in the material of the induction layer reacts with the copper oxide to generate the copper simple substance.
And secondly, performing laser induction on the area of the induction layer corresponding to the electrode pattern to form a first electrode conductive layer 401. The first electrode conductive layer 401 may be a copper layer reduced by copper oxide. The copper layer has a thickness greater than 100 nanometers.
And thirdly, reversing the silicon substrate, and repeating the first step and the second step to finish the preparation of the first electrode conductive layer on the transparent conductive layer on the other surface of the silicon substrate.
And step four, forming a second electrode conductive layer 402 on the first electrode conductive layer 401 by adopting an electroplating mode. Specifically, copper or copper and tin may be electroplated on the first electrode conductive layer 401.
And fifthly, cleaning by adopting chemical liquid medicine to remove the induction layer which is not subjected to laser induction.
And (3) completing the preparation of the electrode of the heterojunction solar cell through the steps one to five.
And step six, after the preparation of the electrode of the heterojunction solar cell is completed, IV test can be carried out.
And IV, testing the current-voltage characteristics of the heterojunction solar cell by using a digital source meter to obtain parameters such as open-circuit voltage, short-circuit current, filling factor, efficiency, series resistance, parallel resistance and the like of the heterojunction solar cell.
In this step, the efficiency of the heterojunction solar cell was tested, mainly by IV testing.
Fig. 5 is a third flow chart of the method for preparing an electrode of a heterojunction solar cell according to the present invention.
Fig. 6 is a schematic diagram of a second embodiment of an electrode of a heterojunction solar cell according to the present invention.
As shown in fig. 6, the electrode of the heterojunction solar cell provided in this embodiment includes a first electrode conductive layer 401 and a protective layer 602, and the electrode provided in fig. 6 is prepared by the electrode preparation method provided in fig. 5.
As shown in fig. 5, the method for preparing an electrode of a heterojunction solar cell provided in this embodiment includes:
printing or printing a material of an induction layer on a region corresponding to the electrode pattern on the transparent conductive layer on one surface of the silicon substrate in a silk screen printing or printing mode to form the induction layer. The material of the induction layer is an insulating material, which contains metal elements, and may be, for example, a viscous solution doped with one or more of copper, copper oxide, cuprous oxide and copper salt, for example, the material of the induction layer may be a slurry doped with copper oxide and a reducing material, wherein the reducing material may be carbon, carbon monoxide or formaldehyde. The inducing layer is subjected to laser induction, i.e. the inducing layer is irradiated with laser light. Under the induction of laser, the reducing material in the material of the induction layer reacts with the substance containing the conductive element to generate the conductive material containing the conductive element, and illustratively, under the induction of laser, the carbon in the material of the induction layer reacts with the copper oxide to generate the copper simple substance.
And secondly, performing laser induction on the area, corresponding to the electrode pattern, on the induction layer to form a first electrode conductive layer. The first electrode conductive layer 401 has a height of 5 to 25 μm and a width of more than 5 μm, and the first electrode conductive layer 401 has a height of 20 μm and a width of 6 μm, for example.
And thirdly, turning over the silicon substrate, and repeating the first step and the second step to finish the preparation of the first electrode conductive layer 401 on the transparent conductive layer on the other surface of the silicon substrate.
Step four, sintering the silicon substrate on which the first electrode conductive layer 401 is formed. In this manner, the bonding force of the first electrode conductive layer 401 and the transparent conductive layer can be increased. The sintering can be performed at low temperature, so that the heterojunction solar cell is prevented from being damaged. The temperature used in sintering may be 80 to 180 ℃, and, illustratively, the temperature in sintering may be 120 ℃.
And step five, cleaning by adopting chemical liquid medicine to remove the induction layer which is not subjected to laser induction, and then forming a protective layer 602 on the first electrode conductive layer 401. Specifically, the first electrode conductive layer 401 may be formed using a copper protective agent or electroless tin plating, and baked and cured.
And step six, after the preparation of the electrode of the heterojunction solar cell is completed, IV test can be carried out.
And IV, testing the current-voltage characteristics of the heterojunction solar cell by using a digital source meter to obtain parameters such as open-circuit voltage, short-circuit current, filling factor, efficiency, series resistance, parallel resistance and the like of the heterojunction solar cell.
In this step, the efficiency of the heterojunction solar cell was tested, mainly by IV testing.
Based on the same inventive concept, the invention also provides a preparation method of the heterojunction solar cell, which comprises the preparation methods of the electrodes of the heterojunction solar cell provided by the above embodiments, and the effects can be achieved consistently, and the preparation method can be implemented specifically with reference to the above embodiments and is not repeated here.
Based on the same inventive concept, the invention further provides an electrode of a heterojunction solar cell, which is prepared by adopting the electrode preparation method of the heterojunction solar cell provided by each embodiment, and the electrode preparation method of the heterojunction solar cell described above can be correspondingly referred to each other, and is not repeated here.
Based on the same inventive concept, the present invention further provides a heterojunction solar cell, which is prepared by using the preparation method of the heterojunction solar cell provided by each embodiment, and the preparation method of the heterojunction solar cell described above can be correspondingly referred to each other, and is not repeated herein.
From the above description of the embodiments, it will be apparent to those skilled in the art that the embodiments may be implemented by means of software plus necessary general hardware platforms, or of course may be implemented by means of hardware. Based on such understanding, the foregoing technical solutions may be embodied essentially or in part in the form of a software product, which may be stored in a computer-readable storage medium, such as a ROM/RAM, a magnetic disk, an optical disk, etc., including several instructions to cause a computer device (which may be a personal computer, a server, or a network device, etc.) to perform the various embodiments or methods of some parts of the embodiments.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims (11)

1. A method for preparing an electrode of a heterojunction solar cell, comprising the steps of:
forming an induction layer on the silicon substrate formed with the transparent conductive layer; the induction layer is made of an insulating material and contains a conductive element, and is used for generating a conductive material containing the conductive element under the induction of laser;
and performing laser induction on the induction layer to form a first electrode conductive layer containing the conductive material.
2. The method of manufacturing an electrode of a heterojunction solar cell as claimed in claim 1, wherein the forming an inducing layer on the silicon substrate on which the transparent conductive layer is formed comprises:
forming an entire surface of the induction layer on the silicon substrate;
performing the laser induction on the induction layer to form a first electrode conductive layer containing the conductive material, including:
and carrying out laser induction on the area of the induction layer corresponding to the electrode pattern to form the first electrode conductive layer containing the conductive material.
3. The method according to claim 2, wherein after the laser induction is performed on the region of the inducing layer corresponding to the electrode pattern to form the first electrode conductive layer including the conductive material, further comprising:
and forming a second electrode conductive layer on the first electrode conductive layer by adopting an electroplating mode.
4. The method for manufacturing an electrode of a heterojunction solar cell as claimed in claim 2 or 3, further comprising:
and removing the area of the induction layer not subjected to the laser induction.
5. The method of manufacturing an electrode of a heterojunction solar cell as claimed in claim 1, wherein the forming an inducing layer on the silicon substrate on which the transparent conductive layer is formed comprises:
forming the induction layer on the silicon substrate in a region corresponding to the electrode pattern;
performing the laser induction on the induction layer to form a first electrode conductive layer containing the conductive material, including:
and carrying out laser induction on the area of the induction layer corresponding to the electrode pattern to form the first electrode conductive layer containing the conductive material.
6. The method of manufacturing an electrode of a heterojunction solar cell according to claim 5, wherein the forming the inducing layer on the silicon substrate in a region corresponding to an electrode pattern comprises:
and forming the induction layer on the silicon substrate in a region corresponding to the electrode pattern by adopting a printing or silk screen printing mode.
7. The method of manufacturing an electrode for a heterojunction solar cell as claimed in claim 5, further comprising:
sintering the silicon substrate on which the first electrode conductive layer is formed.
8. The method for manufacturing an electrode of a heterojunction solar cell as claimed in any one of claims 5 to 7, further comprising:
and forming a protective layer on the first electrode conductive layer.
9. A method of manufacturing a heterojunction solar cell, characterized by comprising the method of manufacturing an electrode of a heterojunction solar cell as claimed in any one of claims 1 to 8.
10. An electrode of a heterojunction solar cell, characterized in that the electrode of the heterojunction solar cell is prepared by adopting the electrode preparation method of the heterojunction solar cell as claimed in any one of claims 1 to 8.
11. A heterojunction solar cell, characterized in that the heterojunction solar cell is prepared by the preparation method of the heterojunction solar cell as claimed in claim 9.
CN202211043540.9A 2022-08-29 2022-08-29 Heterojunction solar cell, electrode and preparation method thereof Pending CN117673192A (en)

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