CN117637819A - Gallium nitride device - Google Patents
Gallium nitride device Download PDFInfo
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- CN117637819A CN117637819A CN202410107533.3A CN202410107533A CN117637819A CN 117637819 A CN117637819 A CN 117637819A CN 202410107533 A CN202410107533 A CN 202410107533A CN 117637819 A CN117637819 A CN 117637819A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 57
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 239000000463 material Substances 0.000 claims abstract description 104
- 239000004065 semiconductor Substances 0.000 claims abstract description 78
- 230000004888 barrier function Effects 0.000 claims abstract description 45
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 150000004767 nitrides Chemical class 0.000 claims abstract description 35
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 29
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 22
- 125000004429 atom Chemical group 0.000 claims abstract description 19
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 30
- 150000001721 carbon Chemical group 0.000 claims description 23
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 20
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Abstract
The invention discloses a gallium nitride device. The gallium nitride device includes: a substrate; the buffer layer is positioned above the substrate; a channel layer located on a surface of the buffer layer away from the substrate; the first surface of the buffer layer is a surface close to the substrate, the second surface of the buffer layer is a surface where the buffer layer is in contact with the channel layer, the material on the second surface side of the buffer layer at least comprises an aluminum atom doped III-V semiconductor material, the ratio of the aluminum atom to the III main group atom is more than or equal to 2% and less than or equal to 5%, and the material on the first surface side of the buffer layer at least comprises a carbon atom doped III-V semiconductor material; the buffer layer comprises one or more sub-layers; the barrier layer is positioned on the surface of the channel layer far away from the buffer layer; the P-type nitride layer is located on a surface of the barrier layer away from the channel layer. The technical scheme provided by the embodiment of the invention improves the yield of the channel layer, the barrier layer and the P-type nitride layer and improves the stability of the electrical performance of the gallium nitride device.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a gallium nitride device.
Background
As shown in fig. 1, fig. 1 is a schematic structural diagram of a gallium nitride device provided in the prior art, in which a iii-v semiconductor layer doped with carbon atoms is often used as a buffer layer, but in the process of growing the buffer layer, the channel layer, the barrier layer and the P-type nitride layer by an MOCVD process (MOCVD is a novel vapor phase epitaxy growth technology developed on the basis of Vapor Phase Epitaxy (VPE)), the iii-v semiconductor layer doped with carbon atoms attached to the surface of the cavity falls off on the surfaces of the channel layer, the barrier layer and the P-type nitride layer, thereby affecting the yields of the channel layer, the barrier layer and the P-type nitride layer and further affecting the stability of the electrical performance of the gallium nitride device. Wherein reference numerals in fig. 1 are as follows: 100-substrate, 101-buffer layer, 102-channel layer, 103-barrier layer, 104-P-nitride layer, 105-gate, 106-source, 107-drain.
Disclosure of Invention
The invention provides a gallium nitride device, which is used for improving the yield of a channel layer, a barrier layer and a P-type nitride layer and improving the stability of the electrical performance of the gallium nitride device.
According to an aspect of the present invention, there is provided a gallium nitride device comprising: a substrate; a buffer layer over the substrate; a channel layer located on a surface of the buffer layer remote from the substrate; the buffer layer comprises a first surface and a second surface which are oppositely arranged, the first surface of the buffer layer is a surface close to the substrate, the second surface of the buffer layer is a surface, which is in contact with the channel layer, of the buffer layer, the material on the second surface side of the buffer layer at least comprises an aluminum atom doped III-V semiconductor material, wherein the ratio of the aluminum atom to the III main group atom is more than or equal to 2% and less than or equal to 5%, and the material on the first surface side of the buffer layer at least comprises a carbon atom doped III-V semiconductor material; the buffer layer comprises one or more sub-layers; a barrier layer located on a surface of the channel layer remote from the buffer layer; a P-type nitride layer located on a surface of the barrier layer remote from the channel layer; the grid electrode is positioned on the surface, away from the barrier layer, of the P-type nitride layer; a source electrode located on a surface of the barrier layer away from the channel layer; and the drain electrode is positioned on the surface of the barrier layer far away from the channel layer.
Optionally, the buffer layer comprises two sublayers, the buffer layer comprising a stack of a carbon atom doped group iii-v semiconductor layer and an aluminum atom doped group iii-v semiconductor layer; the carbon atom doped III-V semiconductor layer is positioned on the substrate; the surface and the interior of the carbon atom doped III-V semiconductor layer comprise a III-V semiconductor material doped with carbon atoms; the aluminum atom doped III-V semiconductor layer is positioned on the surface of the carbon atom doped III-V semiconductor layer, which is far away from the substrate, and is in contact with the channel layer; the aluminum atom doped III-V semiconductor layer includes a III-V semiconductor material doped with aluminum atoms both on a surface and inside.
Optionally, the carbon-doped group iii-v semiconductor layer comprises a carbon-doped gallium nitride layer.
Optionally, the carbon-doped group iii-v semiconductor layer comprises a carbon-doped aluminum gallium nitride layer.
Optionally, in the gallium aluminum nitride layer doped with carbon atoms, the ratio of the aluminum atoms to the atoms of the third main group is greater than or equal to 2% and less than or equal to 5%.
Optionally, the aluminum atom doped group iii-v semiconductor layer comprises an aluminum atom doped gallium nitride layer.
Optionally, the buffer layer comprises a layer, the material on the second surface side of the buffer layer comprises a group iii-v semiconductor material doped with carbon atoms and aluminum atoms, and the material on the first surface side of the buffer layer comprises a group iii-v semiconductor material doped with carbon atoms and aluminum atoms; wherein, in the material of the first surface side of the buffer layer, the ratio of the aluminum atoms to the group III atoms is greater than or equal to 2% and less than or equal to 5%.
Optionally, the material of the buffer layer between the first surface side and the second surface side is a material inside the buffer layer, the material inside the buffer layer includes a group iii-v semiconductor material doped with carbon atoms and aluminum atoms, and a ratio of the aluminum atoms to the group iii atoms in the material inside the buffer layer is greater than or equal to 2%, and less than or equal to 5%.
Optionally, the buffer layer includes a gallium nitride layer doped with carbon atoms and aluminum atoms, and both the surface and the interior of the gallium nitride layer doped with carbon atoms and aluminum atoms include gallium nitride material doped with carbon atoms and aluminum atoms.
Optionally, the substrate comprises a silicon substrate or a silicon nitride substrate.
According to the technical scheme provided by the embodiment of the invention, the buffer layer comprises a first surface and a second surface which are oppositely arranged, the first surface of the buffer layer is a surface close to the substrate, the second surface of the buffer layer is a surface, which is in contact with the channel layer, of the buffer layer, the material on the second surface side of the buffer layer at least comprises an aluminum atom doped III-V semiconductor material, wherein the ratio of the aluminum atom to the III main group atom is more than or equal to 2% and less than or equal to 5%, and the material on the first surface side of the buffer layer at least comprises a carbon atom doped III-V semiconductor material. Therefore, in the process of preparing the buffer layer by the MOCVD process, the material of the first surface side of the buffer layer is formed first, and then the material of the second surface side of the buffer layer is formed. In growing the channel layer, the barrier layer and the P-type nitride layer by the MOCVD process, the film layer attached to the surface of the cavity includes a material on a first surface side of the buffer layer and a material on a second surface side of the buffer layer, and the material on the first surface side of the buffer layer is located between the surface of the cavity and the material on the second surface side of the buffer layer, and the material on the second surface side of the buffer layer including at least an aluminum atom doped iii-v semiconductor material is not easily detached from the surface of the cavity, wherein a ratio of the aluminum atom to the group iii main group atom is greater than or equal to 2% and less than or equal to 5%. In the process of growing the channel layer, the barrier layer and the P-type nitride layer through the MOCVD process, the material covering the uppermost surface of the cavity is a film layer which is not easy to fall off from the surface of the cavity, so that the situation that the effective film layer falls off on the surfaces of the channel layer, the barrier layer and the P-type nitride layer can be effectively avoided, the yield of the channel layer, the barrier layer and the P-type nitride layer is improved, and the stability of the electrical performance of the gallium nitride device is further improved.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a gallium nitride device according to the prior art.
Fig. 2 is a schematic structural diagram of a gallium nitride device according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of another gallium nitride device according to an embodiment of the invention.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or means is not necessarily limited to those steps or means that are expressly listed or inherent to such process, method, article, or apparatus.
In order to improve the yield of the channel layer, the barrier layer and the P-type nitride layer and further improve the stability of the electrical performance of the gallium nitride device, the embodiment of the invention provides the following technical scheme: as shown in fig. 2 and 3, fig. 2 is a schematic structural diagram of a gallium nitride device according to an embodiment of the present invention, and fig. 3 is a schematic structural diagram of another gallium nitride device according to an embodiment of the present invention, where the gallium nitride device includes: a substrate 200; a buffer layer 204, the buffer layer 204 being located over the substrate 200; a channel layer 205, the channel layer 205 being located on a surface of the buffer layer 204 remote from the substrate 200; the buffer layer 204 includes a first surface and a second surface that are oppositely disposed, the first surface of the buffer layer 204 is a surface close to the substrate 200, the second surface of the buffer layer 204 is a surface where the buffer layer 204 contacts the channel layer 205, the material on the second surface side of the buffer layer 204 includes at least an aluminum atom doped iii-v semiconductor material, wherein a ratio of aluminum atoms to group iii atoms is greater than or equal to 2% and less than or equal to 5%, and the material on the first surface side of the buffer layer 204 includes at least a carbon atom doped iii-v semiconductor material; the buffer layer comprises 204 one or more sub-layers (the buffer layer 204 is one layer in fig. 2, and the buffer layer 204 comprises a stack of two sub-layers in fig. 3); a barrier layer 206, the barrier layer 206 being located on a surface of the channel layer 205 remote from the buffer layer 204; a P-type nitride layer 207, the P-type nitride layer 207 being located on a surface of the barrier layer 206 remote from the channel layer 205; a gate 208, the gate 208 being located on a surface of the P-type nitride layer 207 remote from the barrier layer 206; a source 209, the source 209 being located on a surface of the barrier layer 206 remote from the channel layer 205; a drain 210, the drain 210 being located at a surface of the barrier layer 206 remote from the channel layer 205.
In this embodiment, the material on the second surface side of the buffer layer 204 includes at least an aluminum atom doped iii-v semiconductor material, the material on the first surface side of the buffer layer 204 includes at least a carbon atom doped iii-v semiconductor material, and the doping condition and the material type of the material between the first surface side and the second surface side of the buffer layer 204, that is, the material inside the buffer layer 204, are not limited herein.
Optionally, in an embodiment of the present invention, as shown in fig. 2 and 3, an aluminum nitride layer 201, an aluminum gallium nitride layer 202 and a stress release layer 203 are further disposed between the substrate 200 and the buffer layer 204. The aluminum nitride layer 201, the aluminum gallium nitride layer 202, the stress relief layer 203, and the buffer layer 204 may function to match the crystal lattices of the substrate 200 and the channel layer 205, thereby improving the epitaxial yield. By way of example, the P-type nitride layer 207 may be selected from P-type GaN for depleting the two-dimensional electron gas at the corresponding location of the underlying barrier layer 206, and may turn off the gallium nitride device at low voltage.
According to the technical scheme provided by the embodiment of the invention, the buffer layer 204 comprises a first surface and a second surface which are oppositely arranged, the first surface of the buffer layer 204 is a surface close to the substrate 200, the second surface of the buffer layer 204 is a surface where the buffer layer 204 contacts with the channel layer 205, the material on the second surface side of the buffer layer 204 at least comprises an aluminum atom doped III-V semiconductor material, wherein the ratio of the aluminum atom to the III main group atom is greater than or equal to 2% and less than or equal to 5%, and the material on the first surface side of the buffer layer 204 at least comprises a carbon atom doped III-V semiconductor material. Therefore, in preparing the buffer layer 204 by the MOCVD process, the material of the first surface side of the buffer layer 204 is formed first, and then the material of the second surface side of the buffer layer 204 is formed. In growing the channel layer 205, the barrier layer 206, and the P-type nitride layer 207 by the MOCVD process, the film layer attached to the surface of the cavity includes a material on the first surface side of the buffer layer 204 and a material on the second surface side of the buffer layer 204, and the material on the first surface side of the buffer layer 204 is located between the surface of the cavity and the material on the second surface side of the buffer layer 204, and the material on the second surface side of the buffer layer 204 including at least an aluminum atom-doped group iii-v semiconductor material is not easily detached from the surface of the cavity, wherein the ratio of the aluminum atom to the group iii atom is greater than or equal to 2%, and less than or equal to 5%. Because the material covering the uppermost surface of the cavity is a film layer which is not easy to fall off from the surface of the cavity in the process of growing the channel layer 205, the barrier layer 206 and the P-type nitride layer 207 by the MOCVD process, the situation that the effective film layer falls off on the surfaces of the channel layer 205, the barrier layer 206 and the P-type nitride layer 207 can be effectively avoided, and the yield of the channel layer 205, the barrier layer 206 and the P-type nitride layer 207 is improved, and the stability of the electrical performance of the gallium nitride device is further improved.
Optionally, as shown in fig. 2, the buffer layer 204 includes two sub-layers, and the buffer layer 204 includes a stack of a carbon atom doped iii-v semiconductor layer 2041 and an aluminum atom doped iii-v semiconductor layer 2042; a carbon-doped group iii-v semiconductor layer 2041 is located over substrate 200; the surface and the interior of the carbon-doped group iii-v semiconductor layer 2041 each include a carbon-doped group iii-v semiconductor material; aluminum atom doped iii-v semiconductor layer 2042 is located on the surface of carbon atom doped iii-v semiconductor layer 2041 remote from substrate 200 and in contact with channel layer 205; the surface and the interior of the aluminum atom doped group iii-v semiconductor layer 2042 each include a group iii-v semiconductor material doped with aluminum atoms.
Specifically, in the process of preparing the buffer layer 204 by the MOCVD process, the carbon atom doped iii-v semiconductor layer 2041 is formed first, and then the aluminum atom doped iii-v semiconductor layer 2042 is formed. In growing the channel layer 205, the barrier layer 206, and the P-type nitride layer 207 by the MOCVD process, the film layer attached to the surface of the cavity includes the carbon atom doped iii-v semiconductor layer 2041 and the aluminum atom doped iii-v semiconductor layer 2042, and the carbon atom doped iii-v semiconductor layer 2041 is located between the surface of the cavity and the aluminum atom doped iii-v semiconductor layer 2042, and the aluminum atom doped iii-v semiconductor layer 2042 is not easily detached from the surface of the cavity. Because the material covering the uppermost surface of the cavity is a film layer which is not easy to fall off from the surface of the cavity in the process of growing the channel layer 205, the barrier layer 206 and the P-type nitride layer 207 by the MOCVD process, the situation that the effective film layer falls off on the surfaces of the channel layer 205, the barrier layer 206 and the P-type nitride layer 207 can be effectively avoided, and the yield of the channel layer 205, the barrier layer 206 and the P-type nitride layer 207 is improved, and the stability of the electrical performance of the gallium nitride device is further improved.
Optionally, based on the above technical solution, as shown in fig. 2, the carbon-doped iii-v semiconductor layer 2041 includes a carbon-doped gallium nitride layer.
Optionally, based on the above technical solution, as shown in fig. 2, the carbon-doped iii-v semiconductor layer 2041 includes a carbon-doped gallium aluminum nitride layer. Wherein, optionally, in the gallium aluminum nitride layer doped with carbon atoms, the ratio of aluminum atoms to group III atoms is greater than or equal to 2% and less than or equal to 5%.
Specifically, the carbon atom doped iii-v semiconductor layer 2041 includes a carbon atom doped gallium aluminum nitride layer, where the ratio of aluminum atoms to group iii atoms is greater than or equal to 2% and less than or equal to 5%, so that the carbon atom doped iii-v semiconductor layer 2041 attached to the cavity surface is also a film layer that is not easy to fall off from the cavity surface, and it can be further effectively avoided that the film layer falls off on the surfaces of the channel layer 205, the barrier layer 206 and the P-type nitride layer 207, thereby improving the yield of the channel layer 205, the barrier layer 206 and the P-type nitride layer 207, and further improving the stability of the electrical performance of the gallium nitride device.
Optionally, based on the above technical solution, as shown in fig. 2, the aluminum-atom doped iii-v semiconductor layer 2042 includes an aluminum-atom doped gallium nitride layer.
Specifically, the aluminum atom doped iii-v semiconductor layer 2042 includes an aluminum atom doped gallium nitride layer, and the ratio of the aluminum atom to the group iii atom is greater than or equal to 2% and less than or equal to 5%, so that the film layer attached to the uppermost surface of the cavity is not easy to fall off from the surface of the cavity, and the film layer can be effectively prevented from falling off from the surfaces of the channel layer 205, the barrier layer 206 and the P-type nitride layer 207, thereby improving the yield of the channel layer 205, the barrier layer 206 and the P-type nitride layer 207, and further improving the stability of the electrical performance of the gallium nitride device.
Optionally, on the basis of the above technical solution, as shown in fig. 3, the buffer layer 204 includes a layer, the material on the second surface side of the buffer layer 204 includes a group iii-v semiconductor material doped with carbon atoms and aluminum atoms, and the material on the first surface side of the buffer layer 204 includes a group iii-v semiconductor material doped with carbon atoms and aluminum atoms; wherein, in the material of the first surface side of the buffer layer 204, the ratio of the aluminum atom to the group iii atom is greater than or equal to 2% and less than or equal to 5%.
In this embodiment, the material on the second surface side of the buffer layer 204 includes a group iii-v semiconductor material doped with carbon atoms and aluminum atoms, and the material on the first surface side of the buffer layer 204 includes a group iii-v semiconductor material doped with carbon atoms and aluminum atoms, and the doping condition and the material type of the material between the first surface side and the second surface side of the buffer layer 204, that is, the material inside the buffer layer 204, are not limited herein.
Specifically, the buffer layer 204 is a film layer, and the material on the second surface side of the buffer layer 204 and the material on the first surface side of the buffer layer 204 both include iii-v semiconductor materials doped with carbon atoms and aluminum atoms, so that the buffer layer attached to the surface of the cavity is a film layer which is not easy to fall off from the surface of the cavity, and the situation that the film layer falls off from the surfaces of the channel layer 205, the barrier layer 206 and the P-type nitride layer 207 can be further effectively avoided, thereby improving the yield of the channel layer 205, the barrier layer 206 and the P-type nitride layer 207, and further improving the stability of the electrical performance of the gallium nitride device.
In order to further define the doping condition and the material type of the material between the first surface side and the second surface side of the buffer layer 204, i.e. the material inside the buffer layer 204, the following technical solutions are provided in the embodiments of the present invention: optionally, on the basis of the above technical solution, as shown in fig. 3, the material of the buffer layer 204 located between the first surface side and the second surface side is a material inside the buffer layer 204, where the material inside the buffer layer 204 includes a group iii-v semiconductor material doped with carbon atoms and aluminum atoms, and a ratio of aluminum atoms to group iii atoms in the material inside the buffer layer 204 is greater than or equal to 2% and less than or equal to 5%. Specifically, the buffer layer 204 is a film layer, and the film layer is formed by a iii-v semiconductor layer doped with carbon atoms and aluminum atoms, so that the buffer layers attached to the surface of the cavity body comprise film layers which are not easy to fall off from the surface of the cavity body, and the situation that the film layers fall off from the surfaces of the channel layer 205, the barrier layer 206 and the P-type nitride layer 207 can be further effectively avoided, thereby improving the yield of the channel layer 205, the barrier layer 206 and the P-type nitride layer 207 and further improving the stability of the electrical performance of the gallium nitride device.
Optionally, on the basis of the above technical solution, as shown in fig. 3, the buffer layer 204 includes a gallium nitride layer doped with carbon atoms and aluminum atoms; both the surface and the interior of the carbon and aluminum atom doped gallium nitride layer include gallium nitride material doped with carbon and aluminum atoms.
Alternatively, the substrate 200 may comprise a silicon substrate or a silicon nitride substrate based on the above-described technical solution.
In the embodiment of the present invention, either a silicon material or a silicon nitride material may be used as the substrate 200, which widens the selection range of the material of the substrate 200.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present invention may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present invention are achieved, and the present invention is not limited herein.
The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.
Claims (10)
1. A gallium nitride device, comprising:
a substrate;
a buffer layer over the substrate;
a channel layer located on a surface of the buffer layer remote from the substrate;
the buffer layer comprises a first surface and a second surface which are oppositely arranged, the first surface of the buffer layer is a surface close to the substrate, the second surface of the buffer layer is a surface, which is in contact with the channel layer, of the buffer layer, the material on the second surface side of the buffer layer at least comprises an aluminum atom doped III-V semiconductor material, wherein the ratio of the aluminum atom to the III main group atom is more than or equal to 2% and less than or equal to 5%, and the material on the first surface side of the buffer layer at least comprises a carbon atom doped III-V semiconductor material; the buffer layer comprises one or more sub-layers;
a barrier layer located on a surface of the channel layer remote from the buffer layer;
a P-type nitride layer located on a surface of the barrier layer remote from the channel layer;
the grid electrode is positioned on the surface, away from the barrier layer, of the P-type nitride layer;
a source electrode located on a surface of the barrier layer away from the channel layer;
and the drain electrode is positioned on the surface of the barrier layer far away from the channel layer.
2. The gallium nitride device of claim 1, wherein the buffer layer comprises two sublayers, the buffer layer comprising a stack of a carbon atom doped group iii-v semiconductor layer and an aluminum atom doped group iii-v semiconductor layer;
the carbon atom doped III-V semiconductor layer is positioned on the substrate; the surface and the interior of the carbon atom doped III-V semiconductor layer comprise a III-V semiconductor material doped with carbon atoms;
the aluminum atom doped III-V semiconductor layer is positioned on the surface of the carbon atom doped III-V semiconductor layer, which is far away from the substrate, and is in contact with the channel layer; the aluminum atom doped III-V semiconductor layer includes a III-V semiconductor material doped with aluminum atoms both on a surface and inside.
3. The gallium nitride device of claim 2, wherein the carbon-doped group iii-v semiconductor layer comprises a carbon-doped gallium nitride layer.
4. The gallium nitride device of claim 2, wherein the carbon-doped group iii-v semiconductor layer comprises a carbon-doped aluminum gallium nitride layer.
5. A gallium nitride device according to claim 4, wherein the ratio of aluminum atoms to group iii atoms in the carbon atom doped gallium aluminum nitride layer is greater than or equal to 2% and less than or equal to 5%.
6. The gallium nitride device of claim 2, wherein the aluminum atom doped group iii-v semiconductor layer comprises an aluminum atom doped gallium nitride layer.
7. The gallium nitride device of claim 1, wherein the buffer layer comprises a layer, the material on the second surface side of the buffer layer comprises a carbon-and aluminum-doped group iii-v semiconductor material, and the material on the first surface side of the buffer layer comprises a carbon-and aluminum-doped group iii-v semiconductor material; wherein, in the material of the first surface side of the buffer layer, the ratio of the aluminum atoms to the group III atoms is greater than or equal to 2% and less than or equal to 5%.
8. The gallium nitride device of claim 7, wherein the material of the buffer layer between the first surface side and the second surface side is a material within the buffer layer, the material within the buffer layer comprising a group iii-v semiconductor material doped with carbon atoms and aluminum atoms, wherein the ratio of aluminum atoms to group iii atoms in the material within the buffer layer is greater than or equal to 2% and less than or equal to 5%.
9. The gallium nitride device of claim 8, wherein the buffer layer comprises a carbon and aluminum atom doped gallium nitride layer, the carbon and aluminum atom doped gallium nitride layer comprising a gallium nitride material doped with carbon and aluminum atoms on both a surface and an interior thereof.
10. The gallium nitride device of claim 1, wherein the substrate comprises a silicon substrate or a silicon nitride substrate.
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| CN202410107533.3A CN117637819B (en) | 2024-01-26 | Gallium nitride device |
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| CN202410107533.3A CN117637819B (en) | 2024-01-26 | Gallium nitride device |
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