CN107492570B - Composite current spreading layer and manufacturing method thereof - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Abstract
The invention discloses a composite current expansion layer and a manufacturing method thereof, belonging to a manufacturing method of a current expansion layer, wherein the current expansion layer comprises a bottom isolation layer, a GaN current expansion layer, a heterojunction isolation layer and an AlGaN barrier layer which are arranged from bottom to top; the current spreading layer is formed by compounding a plurality of layers, and the heterojunction high-mobility two-dimensional electron or hole gas current spreading layer can spread the current more effectively by utilizing the high-mobility two-dimensional electron or hole gas layer, so that the problem of serious current congestion is solved, the reliability of the chip is improved, and the Droop effect of the chip is reduced; meanwhile, the composite current spreading layer provided by the invention is simple in structure, suitable for growing on various chips and wide in application range.
Description
Technical Field
The invention relates to a manufacturing method of a current expansion layer, in particular to a composite current expansion layer and a manufacturing method thereof.
Background
The current spreading layer is generally adopted at present, and the main process is a method for spreading current by high gradient conductance, namely, a highly doped high-conductivity layer is inserted into an epitaxial layer, the current is spread on the high-conductivity layer, and the common current spreading layer process comprises an ITO transparent electrode layer, a metal current spreading layer, a heavily doped n-type or p-type current spreading layer and the like, but the current spreading layer is single, so that the problem of serious current congestion cannot be thoroughly solved, the reliability of a chip is influenced, and the chip always has a Droop effect; therefore, research and improvement on the structure of the current spreading layer are necessary.
Disclosure of Invention
One of the objectives of the present invention is to provide a composite current spreading layer and a method for manufacturing the same, so as to solve the technical problems of current congestion caused by insufficient current spreading function of various current spreading layers in the prior art.
In order to solve the technical problems, the invention adopts the following technical scheme:
the invention provides a composite current expansion layer, which comprises a bottom isolation layer, a GaN current expansion layer, a heterojunction isolation layer and an AlGaN barrier layer from bottom to top, wherein: the bottom isolation layer and the heterojunction isolation layer are both AlxGa1-xN material, wherein the value of x is 50% to 100%, and the thicknesses of the bottom isolation layer and the heterojunction isolation layer are both less than or equal to 2 nm; the GaN current expansion layer is made of undoped GaN materials, and the thickness of the GaN current expansion layer is 10nm to 200 nm; the AlGaN barrier layer is n-type doped AlxGa1-xN material, wherein the X value is 2% to 30% and the thickness is 10nm to 100 nm.
The invention also provides a composite current expansion layer, which comprises a bottom isolation layer, a GaN current expansion layer, a heterojunction isolation layer and an AlGaN barrier layer from bottom to top, wherein: the bottom isolation layer and the heterojunction isolation layer are both AlxGa1-xN material, wherein the value of x is 50% to 100%, and the thicknesses of the bottom isolation layer and the heterojunction isolation layer are both less than or equal to 2 nm; the GaN current expansion layer is made of undoped GaN materials, and the thickness of the GaN current expansion layer is 10nm to 200 nm; the AlGaN barrier layer is undoped AlxGa1-xN material, wherein the X value is 2% to 30% and the thickness is 10nm to 100 nm.
Preferably, the further technical scheme is as follows: the current expansion layer further comprises a surface contact layer, and the surface contact layer is arranged on the upper part of the AlGaN barrier layer; and the surface contact layer is InyGa1-yN, wherein y has a value of 5 to 35% and a thickness of 2 to 10 nm.
The invention also provides a manufacturing method of the composite current spreading layer, which comprises the following steps:
step A, growing a bottom layer isolation layer on the upper part of the epitaxial main body structure by using MOCVD equipment through a metal organic chemical vapor deposition method, wherein the growth temperature of the bottom layer isolation layer is 900-1300 ℃, and the growth pressure is 10-200 mBar; after the bottom isolation layer is formed, continuing to perform the next step;
b, growing a GaN current expansion layer on the upper part of the bottom isolation layer, wherein the growth temperature of the GaN current expansion layer is 900-1300 ℃, and the growth pressure is 50-600 mBar; after the GaN current expansion layer is formed, continuing to perform the next step;
step C, growing a heterojunction isolation layer on the upper part of the GaN current expansion layer, wherein the growth temperature of the heterojunction isolation layer is 900-1300 ℃, and the growth pressure is 10-200 mBar; after the heterojunction isolating layer is formed, continuing to execute the next step;
d, growing an AlGaN barrier layer on the upper part of the heterojunction isolation layer, wherein the growth temperature of the AlGaN barrier layer is 900-1300 ℃, and the growth pressure is 10-200 mBar; thereby forming a composite current spreading layer.
Preferably, the further technical scheme is as follows: the method further comprises a step E of growing a surface contact layer on the upper portion of the AlGaN barrier layer, wherein the growth temperature of the surface contact layer is 500-900 ℃, the growth pressure is 50-600 mBar, and then a composite current expansion layer is formed.
The further technical scheme is as follows: the epitaxial main body structure in the step A is manufactured according to the following steps:
step A11, growing a base layer on the sapphire substrate by MOCVD (metal organic chemical vapor deposition) method by using MOCVD (metal organic chemical vapor deposition) equipment, wherein the base layer is AlxGa1-xN material, wherein x has a value of 0 to 100%; after the base layer is formed, continuing to perform the next step;
step A12, growing an N-type layer on the upper part of the substrate layer, wherein the N-type layer is AlxGa1-xN material, wherein x has a value of 0 to 100%; and after the N-type layer is formed, finishing the manufacture of the epitaxial main body structure.
The further technical scheme is as follows: the epitaxial main body structure in the step A is manufactured according to the following steps: and growing a quantum well barrier structure layer on the formed composite current expansion layer by using MOCVD equipment through a metal organic chemical vapor deposition method.
The further technical scheme is as follows: the epitaxial main body structure in the step A is manufactured according to the following steps:
step A21, growing a base layer on the sapphire substrate by MOCVD (metal organic chemical vapor deposition) method by using MOCVD (metal organic chemical vapor deposition) equipment, wherein the base layer is AlxGa1-xN material, wherein x has a valueFrom 0 to 100%; after the base layer is formed, continuing to perform the next step;
step A22, growing an N-type layer on the upper part of the substrate layer, wherein the N-type layer is made of N-type doped AlxGa1-xN material, wherein x has a value of 0 to 100%; after an N-type layer is formed, continuing to perform the next step;
step A23, growing a multi-quantum well barrier layer on the N-type layer, wherein the quantum well barrier layer is AlxInyGa1-x-yN/AlaInbGa1-a-bA periodic structure of N, wherein x has a value of 0 to 30%, y has a value of 0 to 50%, a has a value of 0 to 30%, and b has a value of 0 to 10%; and finishing the manufacture of the epitaxial main body structure after the multi-quantum well barrier structure is formed.
The further technical scheme is as follows: the epitaxial main body structure in the step A is manufactured according to the following steps: growing a P-type layer on the formed composite current expansion layer by MOCVD equipment and Metal Organic Chemical Vapor Deposition (MOCVD) method, wherein the P-type layer is AlaInbGa1-a-bN material, wherein a has a value of 0 to 30% and b has a value of 0 to 10%.
Compared with the prior art, the invention has the following beneficial effects: the current spreading layer is formed by compounding a plurality of layers, and the heterojunction high-mobility two-dimensional electron or hole gas current spreading layer can spread the current more effectively by utilizing the high-mobility two-dimensional electron or hole gas layer, so that the problem of serious current congestion is solved, the reliability of the chip is improved, and the Droop effect of the chip is reduced; meanwhile, the composite current spreading layer provided by the invention is simple in structure, suitable for growing on various chips and wide in application range.
Drawings
FIG. 1 is a schematic structural diagram for illustrating one embodiment of the present invention;
FIG. 2 is a schematic structural diagram for explaining another embodiment of the present invention;
fig. 3 is a schematic diagram illustrating an application structure of an embodiment of the present invention.
Detailed Description
The invention is further elucidated with reference to the drawing.
Referring to fig. 1, an embodiment of the present invention is a composite current spreading layer, the current spreading layer includes an underlying isolation layer, a GaN current spreading layer, a heterojunction isolation layer, and an AlGaN barrier layer, which are disposed from bottom to top, wherein:
the bottom isolation layer and the heterojunction isolation layer are both made of AlxGa1-xN materials, wherein the value of x is 50-100%, and the thicknesses of the bottom isolation layer and the heterojunction isolation layer are both less than or equal to 2 nm; the bottom layer isolation layer is used for isolating the effective layer GaN current expansion layer from the bottom layer epitaxy main body structure and eliminating the influence of the bottom layer epitaxy structure on the effective layer GaN current expansion layer; the heterojunction isolation layer is used for isolating the GaN current expansion layer of the effective layer from the AlGaN barrier layer and eliminating the influence of the AlGaN barrier layer on the two-dimensional electron or hole gas layer;
the GaN current expansion layer is made of undoped GaN materials, and the thickness of the GaN current expansion layer is 10nm to 200 nm; the layer forms two-dimensional electron or hole gas, thereby realizing effective expansion of current;
the AlGaN barrier layer is undoped AlxGa1-xN material, wherein the X value is 2% to 30%, and the thickness is 10nm to 100 nm; the layer and GaN current spreading layer form a heterojunction to form a triangular potential well for confining carriers, wherein the n-type doped barrier material also serves to provide electrons
The AlGaN barrier layer is undoped AlxGa1-xN material, wherein the X value is 2% to 30%, and the thickness is 10nm to 100 nm; the layer is used for isolating the GaN current expansion layer of the effective layer from the AlGaN barrier layer and eliminating the influence of the AlGaN barrier layer on a two-dimensional electron or hole gas layer; the layer and GaN current spreading layer form a heterojunction to form a triangular potential well for confining carriers, wherein the n-type doped barrier material also serves to provide electrons
The usage state of the composite current spreading layer in this embodiment is shown in fig. 3, and the composite current spreading layer made of the material can be grown on the composite current spreading layer 1 or the composite current spreading layer 2 in fig. 3; through the composite current expansion layer, when the composite current expansion layer is inserted into an epitaxial layer, a triangular potential well is formed at the heterojunction of the layer due to the bending of an energy band, a two-dimensional electron or hole gas layer with high mobility is generated, the current is effectively expanded, the current congestion phenomenon caused by low carrier concentration or low mobility is eliminated, the reliability of a chip is improved, and the Droop effect of the chip is reduced.
Referring still to FIG. 1, this embodiment of the present invention is still a composite current spreading layer, the only difference from the composite current spreading layer in the above embodiment is that the AlGaN barrier layer in this embodiment is N-doped AlxGa1-xN material, wherein the X value is 2% to 30% and the thickness is 10nm to 100 nm.
The composite current spreading layer with the structure in this embodiment is suitable for being used at the position of the composite current layer 1 shown in fig. 3, so that the composite current spreading layer is ensured to be matched with the n-type layer, and the technical effect basically similar to that of the above embodiment is realized.
Referring to fig. 2, in another embodiment of the present invention, the composite current spreading layer may further include a surface contact layer disposed on an upper portion of the AlGaN barrier layer; and the surface contact layer is InyGa1-yN, wherein y has a value of 5% to 35% and a thickness of 2nm to 10 nm; the layer is used for better ohmic contact with the ITO transparent electrode; in general, a composite current layer incorporating a surface contact layer is only suitable for use in the composite current layer 2 shown in fig. 3.
Based on the structure of the composite current spreading layer, another embodiment of the present invention is a method for manufacturing the composite current spreading layer in the above embodiment, in which MOCVD equipment is required to be used, where MOCVD refers to a novel vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy growth (VPE); the metal organic chemical vapor deposition method performed by the apparatus is a chemical vapor deposition technique for vapor phase epitaxial growth of a thin film by using a thermal decomposition reaction of organic metal. The method is now mainly used for vapor phase growth of compound semiconductors. In the case of producing a thin film by this method, it is necessary to satisfy conditions such that the compound containing a compound semiconductor element is stable at room temperature and easy to handle, has an appropriate vapor pressure in the vicinity of room temperature, and a by-product of the reaction should not interfere with crystal growth and contaminate a growth layer. Therefore, alkyl or aryl derivatives, hydroxy derivatives and the like of metals are often selected as raw materials. It is mainly characterized by low deposition temperature. In addition, no halide raw material is adopted, so that no etching reaction exists in deposition; the application range is wide, and almost all compounds and alloy semiconductors can grow; wide growth temperature range and is suitable for mass production.
The composite current spreading layer prepared by the method can be prepared according to the following steps:
step S11, growing a bottom layer isolation layer on the upper part of the epitaxial main body structure by using MOCVD equipment through a metal organic chemical vapor deposition method, wherein the growth temperature of the bottom layer isolation layer is 900-1300 ℃, the growth pressure is 10-200 mBar, and the bottom layer isolation layer is used for isolating the effective layer GaN current expansion layer from the bottom layer epitaxial structure and eliminating the influence of the bottom layer epitaxial structure on the effective layer GaN current expansion layer; after the bottom isolation layer is formed, continuing to perform S12;
s12, growing a GaN current expansion layer on the upper part of the bottom isolation layer, wherein the growth temperature of the GaN current expansion layer is 900-1300 ℃, the growth pressure is 50-600 mBar, and the layer forms two-dimensional electron or hole gas, so that the current is effectively expanded; after the GaN current extension layer is formed, continuing to perform S13;
s13, growing a heterojunction isolation layer on the upper part of the GaN current expansion layer, wherein the growth temperature of the heterojunction isolation layer is 900-1300 ℃, the growth pressure is 10-200 mBar, and the heterojunction isolation layer is used for isolating the GaN current expansion layer of the effective layer from the AlGaN barrier layer and eliminating the influence of the AlGaN barrier layer on a two-dimensional electron or hole gas layer; after the heterojunction isolation layer is formed, continuing to perform S14;
step S14, growing an AlGaN barrier layer on the upper part of the heterojunction isolation layer, wherein the growth temperature of the AlGaN barrier layer is 900-1300 ℃, the growth pressure is 10-200 mBar, the AlGaN barrier layer and a GaN current expansion layer [002] form a heterojunction to form a triangular potential well for limiting a carrier, and the n-type doped barrier material also plays a role in providing electrons; thereby forming a composite current spreading layer. After the step is finished, the manufactured composite current spreading layer can be used in the composite current spreading layer 1 or the composite current spreading layer 2 shown in fig. 3;
further, as mentioned in step S11, the epitaxial body structure is shown in fig. 3, and may be specifically manufactured according to the following steps:
s111, growing a base layer on the sapphire substrate by using MOCVD equipment through a metal organic chemical vapor deposition method, wherein the base layer is AlxGa1-xN material, wherein x has a value of 0 to 100%; after the base layer is formed, continuing to perform the next step;
step S112, growing an N-type layer on the upper part of the substrate layer, wherein the N-type layer is AlxGa1-xN material, wherein x has a value of 0 to 100%; and after the N-type layer is formed, finishing the manufacture of the epitaxial main body structure.
On the other hand, the epitaxial body structure in step S11 may be further fabricated according to the following steps: and growing a quantum well barrier structure layer on the formed composite current expansion layer by using MOCVD equipment through a metal organic chemical vapor deposition method.
In another embodiment of the present invention, a composite current spreading layer structure only suitable for use on the composite current spreading layer 2 shown in fig. 3 is fabricated, and the specific steps are substantially the same as those in the above embodiment, and specifically as follows:
step S21, growing a bottom layer isolation layer on the upper part of the epitaxial main body structure by using MOCVD equipment through a metal organic chemical vapor deposition method, wherein the growth temperature of the bottom layer isolation layer is 900-1300 ℃, the growth pressure is 10-200 mBar, and the bottom layer isolation layer is used for isolating the effective layer GaN current expansion layer from the bottom layer epitaxial structure and eliminating the influence of the bottom layer epitaxial structure on the effective layer GaN current expansion layer; after the bottom isolation layer is formed, continuing to perform S22;
s22, growing a GaN current expansion layer on the upper part of the bottom isolation layer, wherein the growth temperature of the GaN current expansion layer is 900-1300 ℃, the growth pressure is 50-600 mBar, and the layer forms two-dimensional electron or hole gas, so that the current is effectively expanded; after the GaN current extension layer is formed, continuing to perform S23;
s23, growing a heterojunction isolation layer on the upper part of the GaN current expansion layer, wherein the growth temperature of the heterojunction isolation layer is 900-1300 ℃, the growth pressure is 10-200 mBar, and the heterojunction isolation layer is used for isolating the GaN current expansion layer of the effective layer from the AlGaN barrier layer and eliminating the influence of the AlGaN barrier layer on a two-dimensional electron or hole gas layer; after the heterojunction isolation layer is formed, continuing to perform S24;
step S24, growing an AlGaN barrier layer on the upper part of the heterojunction isolation layer, wherein the growth temperature of the AlGaN barrier layer is 900-1300 ℃, the growth pressure is 10-200 mBar, the AlGaN barrier layer and a GaN current expansion layer [002] form a heterojunction to form a triangular potential well for limiting a carrier, and the n-type doped barrier material also plays a role in providing electrons; after the AlGaN barrier layer is formed, S25 is continuously executed;
step S25, growing a surface contact layer on the upper part of the AlGaN barrier layer, wherein the growth temperature of the surface contact layer is 500-900 ℃, and the growth pressure is 50-600 mBar, thereby forming a composite current expansion layer.
Further, as mentioned in step S21, the epitaxial body structure is shown in fig. 3, and may be specifically manufactured according to the following steps: growing a P-type layer on the formed composite current expansion layer by MOCVD equipment and Metal Organic Chemical Vapor Deposition (MOCVD) method, wherein the P-type layer is AlaInbGa1-a-bN material, wherein a has a value of 0 to 30% and b has a value of 0 to 10%.
According to another embodiment of the present invention, as mentioned in the step S21, the epitaxial body structure is shown in fig. 3, and may be specifically fabricated according to the following steps:
s211, growing a base layer on the sapphire substrate by using MOCVD equipment through a metal organic chemical vapor deposition method, wherein the base layer is AlxGa1-xN material, wherein x has a value of 0 to 100%; after the base layer is formed, continuing to perform the next step;
step S212, growing an N-type layer on the upper part of the substrate layer, wherein the N-type layer is AlxGa1-xN material, wherein x has a value of 0 to 100%; after the N-type layer is formed, the next step is continuedA step of;
step S213, growing a multi-quantum well barrier layer on the upper part of the N-type layer, wherein the quantum well barrier layer is AlxInyGa1-x-yN/AlaInbGa1-a-bA periodic structure of N, wherein x has a value of 0 to 30%, y has a value of 0 to 50%, a has a value of 0 to 30%, and b has a value of 0 to 10%; after the multi-quantum well barrier structure is formed, finishing the manufacture of an epitaxial main body structure;
reference throughout this specification to "one embodiment," "another embodiment," "an embodiment," etc., means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment described generally in this application. The appearances of the same phrase in various places in the specification are not necessarily all referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with any embodiment, it is submitted that it is within the scope of the invention to effect such feature, structure, or characteristic in connection with other embodiments.
Although the invention has been described herein with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure. More specifically, various variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure, the drawings and the appended claims. In addition to variations and modifications in the component parts and/or arrangements, other uses will also be apparent to those skilled in the art.
Claims (8)
1. A composite current spreading layer is characterized in that the current spreading layer comprises a bottom layer isolation layer, a GaN current spreading layer, a heterojunction isolation layer and an AlGaN barrier layer which are arranged from bottom to top, wherein: the bottom isolation layer and the heterojunction isolation layer are both AlxGa1-xN material, wherein the value of x is 50% to 100%, and the thicknesses of the bottom isolation layer and the heterojunction isolation layer are both less than or equal to 2 nm;
the GaN current expansion layer is made of undoped GaN materials, and the thickness of the GaN current expansion layer is 10nm to 200 nm;
the AlGaN barrier layer is n-type doped AlxGa1-xN material, wherein the X value is 2% to 30%, and the thickness is 10nm to 100 nm;
the current expansion layer comprises a bottom isolation layer, a GaN current expansion layer, a heterojunction isolation layer and an AlGaN barrier layer which are arranged from bottom to top, wherein: the bottom isolation layer and the heterojunction isolation layer are both AlxGa1-xN material, wherein the value of x is 50% to 100%, and the thicknesses of the bottom isolation layer and the heterojunction isolation layer are both less than or equal to 2 nm;
the GaN current expansion layer is made of undoped GaN materials, and the thickness of the GaN current expansion layer is 10nm to 200 nm;
the AlGaN barrier layer is undoped AlxGa1-xN material, wherein the X value is 2% to 30% and the thickness is 10nm to 100 nm.
2. The composite current spreading layer of claim 1, wherein: the current expansion layer further comprises a surface contact layer, and the surface contact layer is arranged on the upper part of the AlGaN barrier layer; and the surface contact layer is InyGa1-yN, wherein y has a value of 5 to 35% and a thickness of 2 to 10 nm.
3. A method for making a composite current spreading layer according to any one of claims 1 to 2, said method comprising the steps of:
step A, growing a bottom layer isolation layer on the upper part of the epitaxial main body structure by using MOCVD equipment through a metal organic chemical vapor deposition method, wherein the growth temperature of the bottom layer isolation layer is 900-1300 ℃, and the growth pressure is 10-200 mBar; after the bottom isolation layer is formed, continuing to perform the next step;
b, growing a GaN current expansion layer on the upper part of the bottom isolation layer, wherein the growth temperature of the GaN current expansion layer is 900-1300 ℃, and the growth pressure is 50-600 mBar; after the GaN current expansion layer is formed, continuing to perform the next step;
step C, growing a heterojunction isolation layer on the upper part of the GaN current expansion layer, wherein the growth temperature of the heterojunction isolation layer is 900-1300 ℃, and the growth pressure is 10-200 mBar; after the heterojunction isolating layer is formed, continuing to execute the next step;
d, growing an AlGaN barrier layer on the upper part of the heterojunction isolation layer, wherein the growth temperature of the AlGaN barrier layer is 900-1300 ℃, and the growth pressure is 10-200 mBar; thereby forming a composite current spreading layer.
4. The method of claim 3, wherein: the method further comprises a step E of growing a surface contact layer on the upper portion of the AlGaN barrier layer, wherein the growth temperature of the surface contact layer is 500-900 ℃, the growth pressure is 50-600 mBar, and then a composite current expansion layer is formed.
5. The method of claim 3, wherein the epitaxial body structure of step A is fabricated by the steps of:
step A11, growing a base layer on the sapphire substrate by MOCVD (metal organic chemical vapor deposition) method by using MOCVD (metal organic chemical vapor deposition) equipment, wherein the base layer is AlxGa1-xN material, wherein x has a value of 0 to 100%; after the base layer is formed, continuing to perform the next step;
step A12, growing an N-type layer on the upper part of the substrate layer, wherein the N-type layer is AlxGa1-xN material, wherein x has a value of 0 to 100%; and after the N-type layer is formed, finishing the manufacture of the epitaxial main body structure.
6. The method of claim 3, wherein the epitaxial body structure of step A is fabricated by the steps of:
and growing a quantum well barrier structure layer on the formed composite current expansion layer by using MOCVD equipment through a metal organic chemical vapor deposition method.
7. The method of claim 4, wherein the epitaxial body structure of step A is fabricated by the steps of:
step A21, growing a base layer on the sapphire substrate by MOCVD (metal organic chemical vapor deposition) method by using MOCVD (metal organic chemical vapor deposition) equipment, wherein the base layer is AlxGa1-xN material, wherein x has a value of 0 to 100%; after the base layer is formed, continuing to perform the next step;
step A22, growing an N-type layer on the upper part of the substrate layer, wherein the N-type layer is made of N-type doped AlxGa1-xN material, wherein x has a value of 0 to 100%; after an N-type layer is formed, continuing to perform the next step; step A23, growing a multi-quantum well barrier layer on the N-type layer, wherein the quantum well barrier layer is AlxInyGa1-x-yN/AlaInbGa1-a-bA periodic structure of N, wherein x has a value of 0 to 30%, y has a value of 0 to 50%, a has a value of 0 to 30%, and b has a value of 0 to 10%; and finishing the manufacture of the epitaxial main body structure after the multi-quantum well barrier structure is formed.
8. The method of claim 5, wherein the epitaxial body structure of step A is fabricated by the steps of:
growing a P-type layer on the formed composite current expansion layer by MOCVD equipment and Metal Organic Chemical Vapor Deposition (MOCVD) method, wherein the P-type layer is AlaInbGa1-a-bN material, wherein a has a value of 0 to 30% and b has a value of 0 to 10%.
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