CN117637801A - Micro display device and method of manufacturing the same - Google Patents
Micro display device and method of manufacturing the same Download PDFInfo
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Abstract
The invention provides a micro display device and a manufacturing method thereof. The light-emitting element layer comprises a plurality of micro light-emitting diode elements; the color filter layer comprises a plurality of filter units which are arranged in an array, each filter unit corresponds to one micro light-emitting diode element, a plurality of microstructures are arranged on a second light-emitting surface of one side of the filter unit, which is far away from the driving substrate, and the microstructures are formed by adopting a dry etching process; the light filtering units at least comprise a plurality of first light filtering units, the first light filtering units convert the excitation light emitted by the micro light emitting diode element into laser light, filter other color light and transmit corresponding laser light, the color of the laser light is different from that of the excitation light, and the first light filtering units comprise wavelength conversion materials, refractive particle materials and light filtering materials. The invention can improve the light-emitting rate of the micro display device, achieve the brightness enhancement effect and further improve the display effect of the micro display device.
Description
Technical Field
The invention relates to the technical field of micro display, in particular to a micro display device and a manufacturing method thereof.
Background
In the age of technology development, as the requirements of people on display quality are continuously improved, micro-LEDs (Micro light emitting diode elements) become a hot research problem in the display industry. The Micro-LEDs are distinguished in display applications by their numerous advantages of self-luminescence, high brightness, high efficiency, fast response time, low power consumption, and thinness, since they can be on the order of microns in size. At present, micro-LEDs not only face the problem of mass transfer, but also have the difficulty in full-color display. The quantum dots in the full-color technology have the advantages of narrow half-width, high quantum efficiency, simple synthesis and the like, so that the material is increasingly paid attention to the wide application in the fields of backlight displays, wearable display screens, optical communication, virtual Reality (VR), augmented Reality (AR) and the like. However, for the micro light emitting diode element below 10 μm, even if the color filter material composition or the light emitting surface structure or the internal composition thereof is slightly changed, there is a possibility that the light emitting direction of the light emitted from the micro light emitting diode element is significantly changed after passing through the color filter. Even if the quantum dots are used to realize full color, the resolution of the current quantum dot material patterning scheme cannot meet the requirements due to the quantum dot conversion layer, for example, so that the advantage of high brightness of the micro light emitting diode device cannot be fully reflected.
Disclosure of Invention
In view of the above technical problems, the present invention provides a micro display device and a method for manufacturing the same.
To achieve the above object, the present invention provides a micro display device comprising:
a driving substrate;
the light-emitting element layer is arranged on the driving substrate and comprises a plurality of micro light-emitting diode elements which are mutually spaced and are arranged in an array, the micro light-emitting diode elements emit excitation light under the independent driving of the driving substrate, and the size of the micro light-emitting diode elements is less than or equal to 10 microns;
the color filter layer is formed on the light-emitting element layer and comprises a plurality of filter units which are arranged in an array, each filter unit corresponds to one micro light-emitting diode element, the filter units at least cover the first light-emitting surface of the corresponding micro light-emitting diode element, the second light-emitting surface of the filter unit, which is far away from one side of the driving substrate, is provided with a plurality of microstructures, and the microstructures are formed by adopting a dry etching process; the light filtering units at least comprise a plurality of first light filtering units, the first light filtering units are used for converting the excitation light emitted by the miniature light emitting diode element into the laser light, filtering other color light and transmitting the corresponding laser light, the color of the laser light is different from that of the excitation light, and the first light filtering units comprise wavelength conversion materials, refractive particle materials and light filtering materials.
As an optional technical solution, the plurality of first optical filtering units include a first sub-optical filtering unit, a second sub-optical filtering unit and a third sub-optical filtering unit, where the first sub-optical filtering unit includes a first color wavelength conversion material, a refractive particle material and a first color optical filtering material; the second sub-filtering unit comprises a second color wavelength conversion material, a refractive particle material and a second color filtering material; the third sub-filter unit comprises a third color wavelength conversion material, a refractive particle material and a third color filter material.
As an optional technical scheme, the light emitting diode further comprises a second light filtering unit, wherein the second light filtering unit transmits excitation light corresponding to the micro light emitting diode element, and the second light filtering unit comprises refractive particle materials and light filtering materials and does not have wavelength conversion materials.
As an optional technical solution, the plurality of first optical filtering units include a first sub-optical filtering unit and a second sub-optical filtering unit, where the first sub-optical filtering unit includes a first color wavelength conversion material, a refractive particle material, and a first color optical filtering material; the second sub-filtering unit comprises a second color wavelength conversion material, a refractive particle material and a second color filtering material; the second filter unit includes the refractive particle material and a third color filter material.
As an optional technical solution, the first optical filtering unit has a first wavelength conversion layer and a first optical filtering structure layer, the wavelength conversion material is disposed in the first wavelength conversion layer, and the refractive particle material and the optical filtering material are disposed in the first optical filtering structure layer.
As an optional technical scheme, the light-emitting diode device further comprises a second light filtering unit, wherein the second light filtering unit transmits excitation light emitted by the corresponding miniature light-emitting diode element, and the second light filtering unit comprises refractive particle materials and light filtering materials and is free of wavelength conversion materials; the second light filtering unit is provided with a light-transmitting material layer and a second light filtering structure layer, and the refractive particle material and the light filtering material are arranged in the second light filtering structure layer.
As an alternative technical scheme, the refractive particle material is one or a mixture of more of silicon dioxide, titanium dioxide, zirconium oxide, aluminum oxide and zinc oxide, and the size of the refractive particle material is 50-250nm.
As an optional solution, the micro display device further includes:
a planarization layer disposed on the driving substrate in the same layer as the light emitting element layer, the planarization layer filling gaps between adjacent micro light emitting diode elements so as to have a planarized top surface; and
the shading layer and the color filter layer are arranged on the flat layer in the same layer, and the shading layer is used for spacing the plurality of filter units.
As an optional solution, the micro display device further includes an etching barrier layer, and the etching barrier layer is located between the planarization layer and the color filter layer.
The invention also provides a manufacturing method of the micro display device, which comprises the following steps:
s1, providing the driving substrate;
s2, arranging the light-emitting element layer on the driving substrate;
s3, forming the color filter layer on the light-emitting element layer.
As an optional technical solution, between the step S2 and the step S3, further includes:
s23, forming a flat layer on the driving substrate, wherein the flat layer is used for filling gaps between adjacent micro light emitting diode elements so as to have a flattened top surface.
As an optional technical scheme, the method further comprises a step S4 of forming a shading layer on the flat layer in a chemical vapor deposition mode, wherein the shading layer is used for spacing the plurality of light filtering units.
As an optional technical solution, before step S3, the method further includes: and forming an etching barrier layer on the flat layer, wherein the etching barrier layer is positioned between the flat layer and the color filter layer.
As an optional technical solution, the step S3 includes the following steps:
forming a color filter material layer on the light-emitting element layer by adopting a spin coating or spray coating process;
forming the microstructure on the surface of the color filter material layer by adopting a dry etching process;
patterning the color filter material layer by adopting a patterning process to form the color filter layer with the filter unit.
As an optional technical solution, the step S3 includes the following steps:
forming a color filter material layer on the light-emitting element layer by adopting a spin coating or spray coating process;
patterning the color filter material layer by adopting a patterning process;
and forming the microstructure on the surface of the color filter material layer by adopting a dry etching process.
Compared with the prior art, the invention has the advantages that the color filter layer with refractive particle materials and wavelength conversion materials is arranged corresponding to the micro light-emitting diode element below 10 microns, and the dry etching process is adopted to form a plurality of microstructures on the light-emitting surface of the color filter layer, the microstructures are irregularly shaped or distributed due to the size and distribution condition of the refractive particle materials, the emergent angle of laser light in the color filter layer can be changed, the probability of total reflection of the laser light on the light-emitting surface of the color filter layer is reduced, more excitation light can be converted into the laser light by the color filter layer, so that the light-emitting rate of the micro display device is greatly improved, the brightness enhancement effect is achieved, and the display effect of the micro display device is better improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a micro display device according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a micro display device according to another embodiment of the present invention;
FIG. 3 is a schematic diagram of a micro display device according to another embodiment of the present invention;
fig. 4a to 4e are flowcharts illustrating a step S3 in a manufacturing method of a micro display device according to an embodiment of the invention.
Detailed Description
For a further understanding of the objects, construction, features, and functions of the invention, reference should be made to the following detailed description of the preferred embodiments.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Referring to fig. 1, fig. 1 is a schematic diagram of a micro display device according to an embodiment of the present invention, the micro display device 100 includes a driving substrate 1, a light emitting element layer 2 and a color filter layer 5, the light emitting element layer 2 is disposed on the driving substrate 1, the light emitting element layer 2 includes a plurality of micro light emitting diode elements 21 arranged in an array and spaced apart from each other, the micro light emitting diode elements 21 emit excitation light under the independent driving of the driving substrate 1, that is, each micro light emitting diode element 21 can be independently driven by the driving substrate 1 to emit light with a specific wavelength.
In the present invention, the size of the micro led element 21 is 10 μm or less. That is, in the present invention, the array of micro light emitting diode elements is highly concentrated, and the distance of the pixel points of the micro light emitting diode elements in the array is as small as 10 micrometers or even smaller. The micro light emitting diode element 21 may be a micro light emitting diode element or a micro organic light emitting diode. The micro light emitting diode element may be formed based on an inorganic semiconductor material, for example, gallium nitride, aluminum gallium nitride, gallium arsenide, aluminum gallium indium phosphide, etc., and the micro organic light emitting diode element may be formed based on an organic material, for example, the organic material may be a small molecule, a polymer, a phosphorescent material, etc.
The driving substrate 1 includes, for example, a substrate, a driving circuit (not shown) located on one side of the substrate, and a plurality of contacts electrically connected to the driving circuit, and the substrate may be made of a semiconductor material such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, or indium phosphide, or may be made of a nonconductive material such as glass, plastic, or sapphire. The driving substrate 1 may be a thin film transistor (ThinFilmTransistor, TFT) substrate or a Complementary Metal Oxide Semiconductor (CMOS) substrate, and contacts on the driving substrate 1 are electrically connected to the micro light emitting diode elements 21, so that each micro light emitting diode element 21 can be driven independently. The driving circuit may be an active matrix driving circuit or may be a passive matrix driving circuit.
The color filter layer 5 is formed on the light emitting device layer 2, and the color filter layer 5 includes a plurality of filter units arranged in an array, each filter unit corresponds to one micro light emitting diode device 21, the filter units at least cover the first light emitting surface 22 of the corresponding micro light emitting diode device 21, and the second light emitting surface 54 of the filter unit, which is far away from the driving substrate 1, has a plurality of microstructures 55, where it is noted that the second light emitting surface 54 of the filter units may also be understood as the light emitting surface of the color filter layer 5. The microstructure 55 is formed on the second light-emitting surface 54 of the filter unit by a dry etching process. The plurality of filter units at least comprises a plurality of first filter units, the first filter units convert the excitation light emitted by the micro light emitting diode element 21 into laser light and filter other color light and transmit the corresponding laser light, the color of the laser light is different from that of the excitation light, and the first filter units comprise wavelength conversion materials, refractive particle materials and filter materials.
In addition, the above wavelength conversion material may be a quantum dot material or a phosphor or the like, which may be yttrium aluminum garnet, cerium phosphor, (oxy) nitride phosphor, silicate phosphor, mn4+ activated fluoride phosphor or the like, and the quantum dot material may be a group II-VI compound quantum dot (e.g., cadmium sulfide, cadmium selenide, cadmium telluride, zinc oxide, zinc selenide, zinc telluride or the like), a group III-V compound quantum dot (e.g., gallium arsenide, gallium phosphide, gallium antimonide, mercury sulfide, mercury selenide, mercury antimonide, indium arsenide, indium phosphide, indium antimonide, aluminum arsenide, aluminum phosphide, aluminum antimonide or the like), a perovskite quantum dot. And preferably, the size of the quantum dot material is 2-100nm. The refractive particle material is one or more of silicon dioxide, titanium dioxide, zirconium oxide, aluminum oxide and zinc oxide, and the size of the refractive particle material is preferably 50-250nm.
Furthermore, preferably, in the first filter unit, the content (mass percent) of the refractive particle material is controlled to be 5% -30%.
The composition of the first filter unit may be, for example, a wavelength conversion material, a refractive particle material, and a filter material mixed in a colloid, for example, an epoxy resin series, an acrylic resin series, a phenolic resin series. Furthermore, the filter material can also be colorful filter glue.
With continued reference to fig. 1, in this embodiment, the micro display device 100 further includes a planarization layer 3 and a light shielding layer 4, wherein the planarization layer 3 and the light emitting device layer 2 are disposed on the driving substrate 1 in the same layer, and the planarization layer 3 is used to fill the gaps between the adjacent micro light emitting diode devices 21 so as to have a planarized top surface. The light shielding layer 4 and the color filter layer 5 are arranged on the flat layer 3 in the same layer, and the light shielding layer 4 is used for spacing the plurality of filter units.
Wherein, the material of the flat layer 3 comprises an inorganic material or an organic material, and the inorganic material comprises one or a combination of a plurality of Al, ag, siO, al2O3, zrO2, tiO2, si3N4 and HfO 2; the organic material comprises any one or a combination of a plurality of black matrix photoresist, color filter photoresist, polyimide, retaining wall photoresist (BANK), overlay photoresist, near ultraviolet negative photoresist and styrene-acrylic.
The light shielding layer 4 is mainly used for isolating the side wall from light, and preventing light crosstalk. The material of the light shielding layer 4 is, for example, photoresist, and may be organic black matrix photoresist, color filter photoresist, etc., specifically, polyimide, for example.
In addition, the light shielding layer 4 and the color filter layer 5 further comprise a second substrate 6, such as a glass substrate, on a side away from the light emitting element layer 2.
In another embodiment, the micro display device further comprises an etching barrier layer between the flat layer 3 and the color filter layer 5, which is used to protect the micro light emitting diode element 21 when the color filter layer is formed on the light emitting element layer 2.
With continued reference to fig. 1, in the present embodiment, the plurality of first optical filtering units include a first sub-optical filtering unit 51, a second sub-optical filtering unit 52, and a third sub-optical filtering unit 53, where the first sub-optical filtering unit 51 includes a first color wavelength conversion material, a refractive particle material, and a first color optical filtering material; the second sub-filter unit 52 includes a second color wavelength conversion material, a refractive particle material, and a second color filter material; the third sub-filter unit 53 includes a third color wavelength conversion material, a refractive particle material, and a third color filter material.
In one embodiment, the first color filter material is a red filter material, the second color filter material is a green filter material, and the third color filter material is a blue filter material; the first color wavelength conversion material is a red wavelength conversion material, the second color wavelength conversion material is a green wavelength conversion material, the third color wavelength conversion material is a blue wavelength conversion material, and the micro light emitting diode element emits purple light.
The red wavelength conversion material is, for example, a red series of quantum dots, wherein the red series of quantum dots are selected from one or more of CdSe, cdZnSe, inP, inZnP, perovskite, cuInS, and CuInSe. The green wavelength conversion material is, for example, a green series of quantum dots selected from CdSe, cdZnSe, cdZnSeS, inP, inZnP, perovskite, cuInS, or CuInSe. The blue wavelength conversion material is, for example, a blue series of quantum dots selected from one or more of CdSe, cdZnSe, cdZnSeS, inP, inZnP, perovskite, and CuInS, cuInSe, znSe, cdS, cdZnS.
In this embodiment, the microstructure 55 is formed by dry etching the second light-emitting surface 54 of the first filter unit. In the present invention, the size of the refractive particle material is 50-250nm, the size of the wavelength conversion material (quantum dot material) is 2-100nm, that is, the size of the refractive particle material is much larger than the size of the quantum dot material, when the second light emitting surface 54 of the first filter unit (the first sub-filter unit 51, the second sub-filter unit 52 and the third sub-filter unit 53) is dry etched, the region having the refractive particle material is encountered, the etching is blocked by the refractive particle material, the etching speed is reduced, and the region not having the refractive particle material is not encountered, the etching speed is not affected, so that the second light emitting surface 54 of the first filter unit forms a roughened surface due to different etching speeds during etching, thereby forming a microstructure. That is, these microstructures may be irregularly shaped or arranged due to the size and distribution of the refractive particle material. The irregular shape or arrangement can change the emergent angle of the laser in the color filter layer, so that the probability of total reflection of the excited light on the second emergent surface of the color filter layer is reduced, the color filter layer can convert more excited light into excited light to be emitted, the light yield of the micro display device is greatly improved, the brightness enhancement effect is achieved, and the display effect of the micro display device is further improved well.
Referring to fig. 2, fig. 2 is a schematic diagram of a micro display device according to another embodiment of the present invention, in which the micro display device 200 is similar to the micro display device 100 of the above embodiment, and is different in that the plurality of light filtering units includes a plurality of first light filtering units and a plurality of second light filtering units 56, the second light filtering units 56 transmit the excitation light corresponding to the micro light emitting diode elements 21, and the second light filtering units 56 include refractive particle materials and light filtering materials, and no wavelength conversion material. The plurality of first filter units include a first sub-filter unit 57 and a second sub-filter unit 58, and the first sub-filter unit 57 includes a first color wavelength conversion material, a refractive particle material, and a first color filter material at the same time; the second sub-filter unit 58 includes a second color wavelength conversion material, refractive particle material, and a second color filter material; the second filter unit 56 includes the refractive particle material and the third color filter material, that is, the second filter unit 56 does not include a wavelength conversion material.
Specifically, for example, the first color filter material is a red filter material, and the second color filter material is a green filter material; the first color wavelength conversion material is a red wavelength conversion material, the second color wavelength conversion material is a wavelength conversion material, the third color filter material is a transparent filter material, and the micro light emitting diode element emits blue light. The red wavelength conversion material is, for example, a red series of quantum dots, wherein the red series of quantum dots are selected from one or more of CdSe, cdZnSe, inP, inZnP, perovskite, cuInS, and CuInSe. The green wavelength conversion material is, for example, a green series of quantum dots selected from CdSe, cdZnSe, cdZnSeS, inP, inZnP, perovskite, cuInS, or CuInSe.
In this embodiment, the microstructure 55 is formed by dry etching the first light-emitting surface 54 of the first light-filtering unit (including the first sub-light-filtering unit 57 and the second sub-light-filtering unit 58) and the second light-emitting surface 54 of the second light-filtering unit 56. In the present invention, the size of the refractive particle material is 50-250nm, the size of the wavelength conversion material (quantum dot material) is 2-100nm, that is, the size of the refractive particle material is far greater than the size of the quantum dot material, when the second light emitting surface 54 of the first filter unit and the second filter unit is dry etched, the region having the refractive particle material is encountered, the etching is blocked by the refractive particle material, the etching speed is reduced, and the region not having the refractive particle material is not encountered, the etching speed is not affected, so that the roughened surfaces are formed due to different etching speeds during the etching, thereby forming the microstructure. That is, these microstructures may be irregularly shaped or arranged due to the size and distribution of the refractive particle material. The irregular shape or arrangement can change the emergent angle of the laser in the color filter layer, so that the probability of total reflection of the excited light on the second emergent surface of the color filter layer is reduced, the color filter layer can convert more excited light into excited light to be emitted, the light yield of the micro display device is greatly improved, the brightness enhancement effect is achieved, and the display effect of the micro display device is further improved well.
In addition, referring to fig. 2, in the present embodiment, the color filter layer 5 has a single-layer structure, for example, the first filter unit is formed by: a first mixture including the refractive particle material, the wavelength conversion material, the filter material and the colloid is coated on the light emitting element layer 2 by a spin coating or spray coating process to form a color filter material layer of a first filter unit, and then the color filter material layer of the first filter unit is patterned and the microstructure 55 is formed by dry etching on the surface (second light emitting surface) of the color filter material layer of the first filter unit. For example, the first forming method of the second filtering unit is as follows: the second mixture including the refractive particle material, the filter material and the colloid is coated on the light emitting device layer 2 by spin coating or spray coating to form a color filter material layer of the second filter unit, and then the color filter material layer of the second filter unit is patterned and the microstructure 55 is formed by dry etching on the surface (second light emitting surface) of the color filter material layer of the second filter unit.
In some embodiments, the color filter material layer of the color filter layer (including the first filter unit and the second filter unit in this embodiment) may be obtained by an exposure and development process, and the preparation process thereof is simple and controllable. In the process of forming the first light filtering unit, the first mixture is coated on the whole surface, a color light filtering material layer of the first light filtering unit (comprising the first sub-light filtering unit and the second sub-light filtering unit) which is arranged in an array is formed through an exposure and development process, and then the color light filtering material layer of the second light filtering unit which is arranged in an array is sequentially formed in the same mode. At least one first filter unit and at least one second filter unit adjacent to the first filter unit form a full-color pixel point.
In some embodiments, the color filter material layer of the color filter layer (including the first filter unit and the second filter unit in this embodiment) may be obtained by a dry etching process, and the preparation process thereof is simpler and more controllable. In the process of forming the first light filtering unit, the first mixture is coated on the whole surface, the color light filtering material layers of the first light filtering units (comprising the first sub-light filtering units and the second sub-light filtering units) which are arranged in an array are formed through a dry etching process, and then the color light filtering material layers of the second light filtering units which are arranged in an array are sequentially formed in the same mode. At least one first filter unit and at least one second filter unit adjacent to the first filter unit form a full-color pixel point.
Referring to fig. 3, fig. 3 is a schematic diagram of a micro display device according to another embodiment of the present invention, in which the micro display device 300 has a similar structure to the micro display device 200 of the above embodiment, and the difference is that the color filter layer 50 has a two-layer structure, specifically, the first filter unit 59 has a first wavelength conversion layer 591 and a first filter structure layer 592, the wavelength conversion material is disposed in the first wavelength conversion layer 591, and the refractive particle material and the filter material are disposed in the first filter structure layer 592. The second filter unit 560 has a light-transmitting material layer 561 and a second filter structure layer 562, and the refractive particle material and the filter material are disposed in the second filter structure layer 562. In this embodiment, the microstructures 55 are located on the surfaces (light emitting surfaces) of the first filter structure layer 592 and the second filter structure layer 562 away from the light emitting element layer 2.
The method for manufacturing the color filter layer 50 may be: the first wavelength conversion layer 591 and the light-transmitting material layer 561 are formed on the light-emitting element layer 2, then the first filter structure layer 592 is formed on the first wavelength conversion layer 591, the second filter structure layer 562 is formed on the light-transmitting material layer 561, and the microstructure 55 is formed on the light-emitting surfaces (i.e. the second light-emitting surface 54) of the first filter structure layer 592 and the second filter structure layer 562.
In addition, the invention also provides a manufacturing method of the micro display device, which comprises the following steps:
step S1, providing the driving substrate;
step S2, arranging the light-emitting element layer on the driving substrate;
step S3, forming the color filter layer on the light-emitting element layer.
Wherein, between the step S2 and the step S3, further includes:
in step S23, a planarization layer is formed on the driving substrate, wherein the planarization layer is used for filling the gaps between the adjacent micro light emitting diode elements so as to have a planarized top surface.
The method for manufacturing the micro display device further comprises a step S4 of forming a shading layer on the flat layer in a chemical vapor deposition mode, wherein the shading layer is used for spacing the plurality of light filtering units.
In addition, the step S3 further includes forming an etching barrier layer on the planarization layer, where the etching barrier layer is located between the planarization layer and the color filter layer.
In one embodiment, the step S3 includes the following steps:
step S31, a color filter material layer is formed on the light-emitting element layer by adopting a spin coating or spray coating process;
step S32, patterning the color filter material layer by using a patterning process, wherein the patterning process is, for example, an exposure developing process or a dry etching process;
and step S33, forming the microstructure on the surface of the color filter material layer by adopting a dry etching process.
Referring to fig. 4a to 4e, fig. 4a to 4e are flowcharts of step S3 of a manufacturing method of a micro display device according to an embodiment of the invention, and the following specific steps are combined to describe step S3 of the embodiment, and the step S3 includes the following steps:
step S11, as shown in fig. 4a, a spin coating or spray coating process is used to coat the color filter material layer forming the first filter unit on the first surface 23 of the light emitting device layer 2, and the color filter material layer of the first filter unit is patterned by an exposure and development process, for example, the red filter material layer 110 and the green filter material layer 120 in fig. 4 c;
step S12, as shown in fig. 4b, coating a color filter material layer forming a second filter unit on the first surface 23 of the light emitting device layer 2 by a spin coating or spray coating process, and patterning the color filter material layer of the second filter unit by an exposure developing process, such as the transparent filter material layer 130 in fig. 4 d;
step S13, as shown in fig. 4c, disposing a mask 10 on the surface of the flat layer 3;
in step S14, as shown in fig. 4d, the microstructure 55 is formed on the surface (the second light-emitting surface 54) of the color filter material layer (including the red filter material layer 110, the green filter material layer 120 and the transparent filter material layer 130) by using a dry etching process.
In step S15, as shown in fig. 4e, the mask 10 is removed.
It should be noted that if the step S3 further includes forming an etching stop layer on the planarization layer, the step S13 and the step S15 may be omitted, that is, the mask 10 is not required to be disposed.
As described above, in the present invention, the size of the micro light emitting diode element is 10 μm or less, and such a small size is difficult to achieve both of forming the micro structure of irregular shape or arrangement thereon and securing the display effect. The invention applies the dry etching process to the micro light-emitting diode element, and utilizes the combination of refractive particle materials in the color filter layer and the dry etching process, thereby being capable of well forming micro structures (coarsening structures) with irregular shapes or arrangement on the surface of the small-size structure, and further being capable of well improving the display effect of the micro display device.
Furthermore, in another embodiment, the step S3 includes the steps of:
step S34, a color filter material layer is formed on the light-emitting element layer by adopting a spin coating or spray coating process;
step S35, forming the microstructure on the surface of the color filter material layer by adopting a dry etching process;
in step S36, patterning the color filter material layer by using a patterning process, for example, an exposure developing process or a dry etching process, to form the color filter layer with the filter unit.
Steps S34 to S36 in this embodiment are similar to steps S31 to S33 described above, except that in this embodiment, after the color filter layer is formed on the light emitting device layer, the microstructure is formed on the surface of the color filter layer by using a dry etching process, and then patterning of the color filter layer is performed.
In addition, the mask 10 used in the above embodiment may be a dielectric material mask, a photoresist mask, a metal mask, or the like, wherein the material of the dielectric material mask may be silicon dioxide, silicon nitride, or aluminum oxide, and the metal mask may be a plurality of metal layers stacked, and the material of the metal layers may include cadmium, aluminum, nickel, gold, titanium, platinum, or the like; the dry etching process comprises physical etching, chemical etching or a combination of physical etching and chemical etching; the physical etching includes ion beam etching, the etching gas used for the ion beam etching includes inert gas, the chemical etching includes plasma etching, the etching gas used for the plasma etching includes sulfur hexafluoride and/or carbon tetrafluoride, the physicochemical etching includes reactive ion etching, and the etching gas used for the reactive ion etching includes any one of chlorine, boron trichloride, sulfur hexafluoride, carbon tetrafluoride and inert gas, but is not limited thereto.
For the embodiment in which the color filter layer has a two-layer structure, the dry etching process is similar to the above embodiment, except that the color filter layer is manufactured in two layers, for example, as shown in fig. 3, the first filter unit has a first wavelength conversion layer and a first filter structure layer, and the second filter unit has a light-transmitting material layer and a second filter structure layer.
In summary, the color filter layer with refractive particle materials and wavelength conversion materials is disposed corresponding to the micro light emitting diode element below 10 micrometers, and the dry etching process is adopted to form a plurality of microstructures on the light emitting surface of the color filter layer, and the microstructures are irregularly shaped or arranged due to the size and distribution of the refractive particle materials, so that the emergent angle of the laser light in the color filter layer can be changed, the probability of total reflection of the laser light on the light emitting surface of the color filter layer is reduced, more excitation light can be converted into the laser light by the color filter layer, the light emitting rate of the micro display device is greatly improved, the brightness enhancement effect is achieved, and the display effect of the micro display device is improved well.
The invention has been described with respect to the above-described embodiments, however, the above-described embodiments are merely examples of practicing the invention. In addition, the technical features described above in the different embodiments of the present invention may be combined with each other as long as they do not collide with each other. It should be noted that the disclosed embodiments do not limit the scope of the invention. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Claims (15)
1. A micro display device, the micro display device comprising:
a driving substrate;
the light-emitting element layer is arranged on the driving substrate and comprises a plurality of micro light-emitting diode elements which are mutually spaced and are arranged in an array, the micro light-emitting diode elements emit excitation light under the independent driving of the driving substrate, and the size of the micro light-emitting diode elements is less than or equal to 10 microns;
the color filter layer is formed on the light-emitting element layer and comprises a plurality of filter units which are arranged in an array, each filter unit corresponds to one micro light-emitting diode element, the filter units at least cover the first light-emitting surface of the corresponding micro light-emitting diode element, the second light-emitting surface of the filter unit, which is far away from one side of the driving substrate, is provided with a plurality of microstructures, and the microstructures are formed by adopting a dry etching process; the light filtering units at least comprise a plurality of first light filtering units, the first light filtering units are used for converting the excitation light emitted by the miniature light emitting diode element into the laser light, filtering other color light and transmitting the corresponding laser light, the color of the laser light is different from that of the excitation light, and the first light filtering units comprise wavelength conversion materials, refractive particle materials and light filtering materials.
2. The micro display device as set forth in claim 1, wherein the plurality of first filter units includes a first sub-filter unit including a first color wavelength conversion material, a refractive particle material, and a first color filter material at the same time, a second sub-filter unit, and a third sub-filter unit; the second sub-filtering unit comprises a second color wavelength conversion material, a refractive particle material and a second color filtering material; the third sub-filter unit comprises a third color wavelength conversion material, a refractive particle material and a third color filter material.
3. The micro-display device of claim 1, further comprising a second filter unit transmitting excitation light corresponding to the micro light emitting diode element, the second filter unit comprising refractive particle material and filter material and being free of wavelength conversion material.
4. A micro display device as claimed in claim 3, wherein the plurality of first filter units comprises a first sub-filter unit and a second sub-filter unit, the first sub-filter unit comprising a first color wavelength converting material, a refractive particle material and a first color filter material at the same time; the second sub-filtering unit comprises a second color wavelength conversion material, a refractive particle material and a second color filtering material; the second filter unit includes the refractive particle material and a third color filter material.
5. A microdisplay device according to claim 1, wherein the first filter unit has a first wavelength converting layer and a first filter structure layer, the wavelength converting material being disposed in the first wavelength converting layer, the refractive particle material and the filter material being disposed in the first filter structure layer.
6. The micro-display device of claim 5, further comprising a second filter unit transmitting excitation light corresponding to the micro light emitting diode element, the second filter unit comprising refractive particle material and filter material and being free of wavelength conversion material; the second light filtering unit is provided with a light-transmitting material layer and a second light filtering structure layer, and the refractive particle material and the light filtering material are arranged in the second light filtering structure layer.
7. The microdisplay device of claim 1 in which the refractive particle material is a mixture of one or more of silica, titania, zirconia, alumina, zinc oxide and the refractive particle material has a size of 50-250nm.
8. The microdisplay device of claim 1, further comprising:
a planarization layer disposed on the driving substrate in the same layer as the light emitting element layer, the planarization layer filling gaps between adjacent micro light emitting diode elements so as to have a planarized top surface; and
the shading layer and the color filter layer are arranged on the flat layer in the same layer, and the shading layer is used for spacing the plurality of filter units.
9. The microdisplay device of claim 8 further comprising an etch-stop layer between the planarization layer and the color filter layer.
10. A method of manufacturing a micro display device according to any one of claims 1 to 9, comprising:
s1, providing the driving substrate;
s2, arranging the light-emitting element layer on the driving substrate;
s3, forming the color filter layer on the light-emitting element layer.
11. The method of manufacturing a micro-display device according to claim 10, wherein between the step S2 and the step S3 further comprises:
s23, forming a flat layer on the driving substrate, wherein the flat layer is used for filling gaps between adjacent micro light emitting diode elements so as to have a flattened top surface.
12. The method of claim 11, further comprising step S4 of forming a light shielding layer on the flat layer by chemical vapor deposition, wherein the light shielding layer is used for spacing the plurality of light filtering units.
13. The method for manufacturing a micro-display device according to claim 11, wherein the step S3 further comprises: and forming an etching barrier layer on the flat layer, wherein the etching barrier layer is positioned between the flat layer and the color filter layer.
14. The method of manufacturing a micro display device according to claim 10, wherein the step S3 comprises the steps of:
forming a color filter material layer on the light-emitting element layer by adopting a spin coating or spray coating process;
forming the microstructure on the surface of the color filter material layer by adopting a dry etching process;
patterning the color filter material layer by adopting a patterning process to form the color filter layer with the filter unit.
15. The method of manufacturing a micro display device according to claim 10, wherein the step S3 comprises the steps of:
forming a color filter material layer on the light-emitting element layer by adopting a spin coating or spray coating process;
patterning the color filter material layer by adopting a patterning process;
and forming the microstructure on the surface of the color filter material layer by adopting a dry etching process.
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| CN202311744506.9A CN117637801A (en) | 2023-12-18 | 2023-12-18 | Micro display device and method of manufacturing the same |
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