CN117637663A - Semiconductor power module with more efficient heat dissipation and improved switching performance - Google Patents

Semiconductor power module with more efficient heat dissipation and improved switching performance Download PDF

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Publication number
CN117637663A
CN117637663A CN202311064270.4A CN202311064270A CN117637663A CN 117637663 A CN117637663 A CN 117637663A CN 202311064270 A CN202311064270 A CN 202311064270A CN 117637663 A CN117637663 A CN 117637663A
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China
Prior art keywords
leadframe
power module
semiconductor power
lead frame
semiconductor
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CN202311064270.4A
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Chinese (zh)
Inventor
小松雄尔
弗洛里安·威廉密
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ZF Friedrichshafen AG
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ZF Friedrichshafen AG
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Publication of CN117637663A publication Critical patent/CN117637663A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383—Multilayer substrates
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1027—IV
    • H01L2924/10272—Silicon Carbide [SiC]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/1033—Gallium nitride [GaN]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1067—Oxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Abstract

The present invention relates to a semiconductor power module having more efficient heat dissipation and improved switching performance. Which comprises a plurality of semiconductor switching elements for generating an output current by means of switching of the semiconductor switching elements on the basis of an input current supplied by a voltage source. The semiconductor switching element includes a plurality of diodes each having an anode and a cathode; a first lead frame and a second lead frame having a plurality of conductor tracks for electrically connecting the semiconductor switching elements in order to form a half-bridge with a high side and a low side based on the semiconductor switching elements. The first leadframe (16) is associated with the high side and the second leadframe (18) is associated with the low side, and the diode (14) is in electrical contact between the first leadframe (16) and the second leadframe (18) such that an anode (142) of the diode (14) faces a cooler mechanically connected to and thermally coupled with the semiconductor power module (10).

Description

Semiconductor power module with more efficient heat dissipation and improved switching performance
Technical Field
The invention relates to a semiconductor power module for a converter, in particular an inverter, for powering an electric transaxle in an electric or hybrid vehicle; a corresponding converter, in particular an inverter; a corresponding electric transaxle having such a converter; and a corresponding vehicle having such an electric transaxle.
Background
In the prior art, electric and hybrid vehicles are known which are driven entirely or in an auxiliary manner by one or more electric machines as drive units. In order to supply electric energy to the electric machines of these electric vehicles or hybrid vehicles, electric vehicles and hybrid vehicles comprise an electric energy store, in particular a rechargeable battery. These batteries are designed as direct voltage sources (DC power sources), however, motors generally require an alternating voltage (AC voltage). Therefore, power electronics with a so-called inverter are usually connected between the battery and the electric Machine (E-Machine) of the electric vehicle or hybrid vehicle. Here, the inverter converts the DC voltage into an AC voltage. In addition to electric vehicles, fuel cell vehicles are also known. Fuel cells convert chemical fuels such as hydrogen directly into electrical energy. When the electric motor is driven by electric energy, the fuel cell functions like a rechargeable battery.
The converter mentioned at the beginning may also be a DC/DC converter or an AC/DC converter. The output voltages from the battery and the fuel cell are typically different from the appropriate voltages for the inverter. Here, a DC/DC converter is connected between the cells or the fuel cells, and converts the direct voltage of the cells or the fuel cells into a suitable voltage for the inverter. When the rechargeable battery is charged from the grid-connected AC power line, an AC/DC converter is connected between the AC power line and the battery. When the motor is used as a regenerative brake to charge the recovered energy into a rechargeable battery, the inverter also functions as an AC/DC converter.
Such converters, in particular inverters, often comprise semiconductor switching elements, typically formed by transistors, such as MOSFETs or IGBTs. It is known that semiconductor switching elements are designed as so-called half-bridges, which have a high-side device (i.e., a high-side device) and a low-side device (i.e., a low-side device). Such high-side or low-side devices comprise one or more parallel semiconductor switching elements which are controlled in a targeted manner during operation of the inverter in order to generate a plurality of phase currents of the AC current, which phase currents are each time-variable and generally sinusoidal, from the DC current fed from the half-bridge input side, which phase currents are staggered in relation to one another.
A problem with the semiconductor power modules known from the prior art is that the heat generated in the semiconductor switching element due to the high power loss is not sufficiently efficiently conducted away, in particular when using semiconductor switching elements with relatively low heat conducting capacity. The semiconductor switching elements are thus subject to a risk of overheating, which can impair the function of the entire converter.
Disclosure of Invention
The object of the present invention is to provide a semiconductor power module for a converter, in particular an inverter, in order to at least partially eliminate the above-mentioned disadvantages.
According to the invention, this object is achieved by a semiconductor power module, a converter, an electric transaxle and a vehicle according to the independent claims. Advantageous embodiments and developments of the invention are evident from the dependent claims.
The invention relates to a semiconductor power module for operating a converter of an electric transaxle in an electric and/or hybrid vehicle. The converter is preferably a DC/AC inverter for converting a DC voltage into an AC voltage. Alternatively, the converter may be configured as a DC/DC converter for converting a DC input voltage into a DC output voltage different from the DC input voltage.
The semiconductor power module comprises a plurality of semiconductor switching elements for generating an output current by means of switching of the semiconductor switching elements based on an input current provided by a voltage source. In the case of an inverter, the input current is a DC current provided by a DC voltage source, wherein the output current is an AC current having a plurality of phase currents. In the case of a DC/DC converter, the input current is a DC input current provided by a DC voltage source, wherein the output voltage is a DC voltage different from the DC input voltage, wherein the output current is a DC output current different from the DC input current, which is preferably used for charging a vehicle battery, wherein the DC output current is supplied on the DC output side.
The semiconductor switching element comprises one or more diodes having an anode and a cathode, respectively. Preferably, the semiconductor switching element comprises one or more bipolar transistors, in particular IGBTs. The semiconductor material used for bipolar transistors, in particular IGBTs, is preferably silicon. Alternatively, so-called semiconductors with a wide band gap (English: wide bandgap semiconductors, WBS), such as silicon carbide or gallium nitride, can also be used for bipolar transistors, in particular IGBTs. The diode or diodes are preferably configured as schottky diodes. The semiconductor material used for the diode is preferably a gallium oxide compound or one of the WBSs described above.
The semiconductor power module further includes a first lead frame and a second lead frame having a plurality of conductor traces for electrically connecting the semiconductor switching elements so as to form a semiconductor switching element-based half bridge having a high side and a low side. Advantageously, the semiconductor power module comprises a third leadframe. Preferably, the first leadframe is associated with the high side and the second leadframe is associated with the low side. The assignment of such a leadframe to the high side or low side means that a plurality of components, important components of the high side or low side, are arranged on and/or fastened to the respective leadframe or are controlled via the gate terminals on the respective leadframe. For example, if a high-side or low-side transistor is arranged on the lead frame, the lead frame is assigned to the high-side or low-side. In this way, switching currents can be led through the respective semiconductor switching element or blocked. The first and/or the second and/or the third lead frame are provided by an upper metal layer of the multilayer substrate, in particular by two regions of the upper metal layer which are electrically or galvanically isolated from each other, wherein the substrate additionally comprises a lower metal layer and an insulating layer between the two metal layers. For example, the substrate is a Direct Bonded Copper (DBC) substrate or an Insulated Metal Substrate (IMS). A plurality of semiconductor switching elements may be mounted on the first lead frame and the second lead frame, respectively. Advantageously, the first, second and optionally third lead frames are constituted by the same substrate.
A cooler is arranged on the underside of the semiconductor power module and is thermally coupled to the semiconductor switching element in order to effectively conduct away heat generated by the high-loss power during operation of the semiconductor power module and in this way to protect the semiconductor switching element and other components of the semiconductor power module or of the converter from overheating. Preferably, the cooler is docked onto the multilayer substrate from below, in particular onto the lower metal layer of the substrate. The cooler may comprise a cooling plate below which a pin fin structure of a plurality of fins is arranged, which define a plurality of cooling circuits for flowing a cooling medium, such as water.
According to the invention, the diode is in electrical contact between the first and second lead frames, so that the anode of the diode faces a cooler mechanically docked to and thermally coupled with the semiconductor power module. For example, in the case of a semiconductor power module having one or more lead frames and an associated cooler, the anodes of the diodes are arranged facing the lead frames, for example, facing the first, second or third lead frames. As exemplarily described above, this is the case when the first and/or the second and/or the third lead frame is provided by the upper metal layer of the multilayer substrate and when the cooler is docked with the lower metal layer of the multilayer substrate at the lower side. In diodes, such as gallium oxide based schottky diodes, a substantial portion of the heat is generated in the region of the anode. This heat can thus be conducted away particularly effectively by the measures according to the invention, so that the diode is better protected from overheating. The function of the entire converter is thus improved. In this configuration, it is possible that the high-side diode is no longer arranged on the high-side leadframe, but on the other leadframe. It is also possible that the low-side diode is no longer arranged on the lead frame belonging to the low side, but on another lead frame. For example, the high-side transistors are arranged on a first lead frame, while the high-side diodes are arranged on a second lead frame. Further, for example, a transistor on the low side is arranged on the second lead frame, and a diode on the low side is arranged on the third lead frame.
According to one embodiment, the semiconductor switching element configured as a bipolar transistor, in particular as an insulated gate bipolar transistor, has a positive current electrode (for example a collector contact) and a negative current electrode (for example an emitter contact), respectively, wherein the negative current electrode is arranged opposite the first or second leadframe (in particular the substrate), and the positive current electrode is arranged facing the first or second leadframe (in particular the substrate, preferably an upper metal layer of a multilayer substrate, such as a DBC substrate). This enables a particularly simple interconnection of the bipolar transistors to form a half bridge.
According to a further embodiment, the semiconductor power module is configured as a half-bridge module having a module high side and a module low side, wherein the module high side and the module low side each comprise one or more semiconductor switching elements connected in parallel. In this case, the half-bridge module itself may function as a complete half-bridge and thus provide one of the plurality of phase units of the current transformer. Alternatively, a plurality of half-bridge modules may be combined with one another in order to form a half-bridge that is expanded in terms of the maximum current amount that can be carried, and thus an expanded phase unit. The module high sides are connected in parallel to each other to form the high side of the combined half bridge. At the same time, the module low sides are connected in parallel to each other so as to form the low side of the combined half bridge. In a converter, in particular an inverter, a plurality of (e.g. three) such combined half-bridges may be used, wherein each combined half-bridge forms a phase unit of one of a plurality of phase currents generating an AC current at its current output.
It is also proposed that the cooler includes the first, second and third lead frames in area.
It is also proposed that the diode is at least partially configured as a schottky diode.
The invention also relates to a current transformer for energizing an electric transaxle, in particular a motor installed therein, having such a semiconductor power module, to a corresponding electric transaxle and to a vehicle having such an electric transaxle. The converter may be configured as an inverter or a rectifier and has a plurality of (e.g., three) phase units. It follows that the advantages already described in connection with the semiconductor power module according to the invention also apply to the converter according to the invention, the electric transaxle according to the invention and the vehicle according to the invention.
Drawings
The invention will be exemplarily explained below in connection with the embodiments shown in the drawings.
Wherein:
fig. 1 shows a schematic diagram of a top view of a semiconductor power module, wherein the semiconductor power module comprises a plurality of bipolar transistors and diodes;
fig. 2 shows a schematic diagram of a diode of the semiconductor power module of fig. 1 in a cross-sectional view.
The same subject matter, functional units, and similar components in the various figures are denoted by the same reference numerals. Unless explicitly or implicitly stated otherwise in the description, these subject matter, functional units and similar components are identically implemented in their technical features.
Detailed Description
Fig. 1 shows a schematic diagram of a top view of a semiconductor power module 10 for a converter (not shown). The current transformer is configured to energize an electric transaxle of an electric vehicle or a hybrid vehicle. The converter is preferably configured as a DC/AC inverter for converting a DC current at the input into an AC current at the output, and further preferably into a multiphase AC current with a plurality of AC phase currents. To this end, the converter or inverter has a plurality of phase units, which are each interconnected for generating one of the AC phase currents. The semiconductor power module 10 is preferably designed as a half-bridge module, which has a module high side and a module low side and provides a complete half-bridge circuit. In a current transformer, each phase unit may use one or more such half-bridge modules in combination. In the case of a plurality of half-bridge modules assigned to each phase unit, the module high sides of these half-bridge modules are preferably connected in parallel to one another in order to form a high-side arrangement of the entire phase unit. At the same time, the module low sides of these half-bridge modules are preferably connected in parallel with each other in order to form a low-side arrangement of the entire phase unit.
The semiconductor power module 10 comprises a plurality of semiconductor switching elements 12, 14 which can be switched with respect to ground in order to achieve a current conversion. As schematically shown in fig. 1, a plurality of bipolar transistors 12 and a plurality of diodes 14 are included in a semiconductor power module 10. Bipolar transistor 12 is of NPN type or is preferably designed as an insulated gate bipolar transistor (IGBT or n-channel IGBT) based on silicon, while diode 14 is preferably designed as a schottky diode based on gallium oxide. The power module 10 includes a first leadframe 16 (illustratively and preferably herein configured as a positive polarity DC leadframe (english: DC positive leadframe)), a second leadframe 18 (illustratively and preferably configured as an AC leadframe (english: AC leadframe)), and a third leadframe 20 (illustratively and preferably configured as a negative polarity DC leadframe (english: DC negative leadframe)). The first leadframe 16, the second leadframe 18, and the third leadframe 20 are formed of a unique substrate (e.g., DBC substrate.) additionally, the power module 10 also includes a gate leadframe 22 for the high side of the module and an additional gate leadframe 24 for the low side of the module. Half of the transistors 12 are disposed on the positive polarity DC leadframe 16 and the other half are disposed on the AC leadframe 18. The lower contacts that function as collectors of the transistors 12 are physically and electrically connected to these leadframes 16, 18. Half of the diodes 14 are disposed on the AC leadframe 18 and the other half are disposed on the negative polarity DC leadframe 20. The negative polarity DC leadframes 14 are connected to these AC leadframes 18. The diodes 18 are disposed on the negative polarity DC leadframes 18 20 are physically and electrically connected. The positive polarity DC lead frame 16 is electrically connected to the cathode contact 144 of the diode 14 on the AC lead frame 18 by conductor trace 162. AC lead frame 18 is electrically connected to emitter contact 122 of bipolar transistor 12 on positive polarity DC lead frame 16 via conductor trace 182. The AC lead frame 18 is also electrically connected to the cathode contact 144 of the diode 14 on the negative DC lead frame 20 by a conductor trace 184. The negative polarity DC lead frame 20 is electrically connected to the emitter contact 122 of the bipolar transistor 12 on the AC lead frame 18 by conductor trace 202. The gate lead frame 22 for the high side of the module is electrically connected to the gate contact 124 of the bipolar transistor 12 on the positive polarity DC lead frame 16 by connecting wires 222. The gate lead frame 24 for the low side of the module is electrically connected to the gate contact 124 of the bipolar transistor 12 on the AC lead frame 18 by bonding wires 242.
Fig. 2 shows the structure of the diode 14 in a schematic cross-sectional view. Diode 14 includes an anode 142 and a cathode 144. As can be seen in fig. 2, in the as-built state of the diode 14, the anode 142 is facing the lower AC lead frame 18 or the negative DC lead frame 20. A cooler, not shown here, is preferably connected to the underside of the lower lead frame 18 or 20 in order to conduct away the heat generated during operation of the semiconductor switching elements 12, 14. Such an arrangement is particularly advantageous for efficient heat dissipation, since heat is generated in the diode 14 mainly in the region of the anode 142.
List of reference numerals
10 semiconductor power module
12 bipolar transistor
122 emitter contact
124 gate contact
14 diode
142 anode
144 cathode contact
16 first lead frame (DC lead frame with positive polarity)
162 conductor tracks for a positive polarity DC lead frame
18 second lead frame (AC lead frame)
182 conductor tracks for an AC leadframe leading to the positive side
184 conductor tracks for the AC leadframe leading to the negative side
20 third lead frame (negative DC lead frame)
202 conductor tracks for negative polarity DC lead frames
22 grid lead frame for high side of module
222 for high side gate wiring of the module
24 grid lead frame for module low side
242 for gate wiring on the low side of the module

Claims (11)

1. Semiconductor power module (10) for a current transformer for energizing an electric transaxle in an electric and/or hybrid vehicle, the semiconductor power module comprising:
a plurality of semiconductor switching elements (12, 14) for generating an output current by means of switching of the semiconductor switching elements (12, 14) on the basis of an input current supplied by a voltage source, wherein the semiconductor switching elements (12, 14) comprise at least one diode (14) having an anode (142) and a cathode (144), respectively,
-a first lead frame (16) and a second lead frame (18) having a plurality of conductor tracks (162, 182) for electrically connecting the semiconductor switching elements (12, 14) so as to form a half-bridge with a high side and a low side based on the semiconductor switching elements (12, 14), wherein the first lead frame (16) and the second lead frame (18) are provided by mutually electrically insulated or galvanically isolated areas of an upper metal layer of a multilayer substrate, wherein the diode (14) is electrically contacted between the first lead frame (16) and the second lead frame (18) such that an anode (142) of the diode (14) is mechanically connected to the semiconductor power module (10) towards a cooler thermally coupled thereto, wherein the cooler is connected to the multilayer substrate from below.
2. The semiconductor power module (10) of claim 1, wherein the first leadframe (16) is associated with the high side and the second leadframe (18) is associated with the low side.
3. The semiconductor power module (10) according to claim 1 or 2, wherein the first lead frame (16) and the second lead frame (18) are provided by mutually electrically insulated or galvanically isolated areas of an upper metal layer of a multi-layered substrate, and wherein the cooler is docked onto the multi-layered substrate from below.
4. A semiconductor power module (10) according to any of claims 1 to 3, wherein the first leadframe (16) is a DC leadframe of positive polarity, wherein the second leadframe (18) is an AC leadframe, wherein the cooler is arranged on a side of the semiconductor power module (10) facing the second leadframe (18), wherein an anode (142) of the diode (14) is arranged towards the second leadframe (18) and/or at least one further diode is arranged with its anode towards a third leadframe (20), which is a DC leadframe of negative polarity.
5. The semiconductor power module (10) according to any one of claims 1 to 4, wherein the semiconductor switching element (12, 14) further comprises a plurality of transistors (12), preferably insulated gate bipolar transistors, having a current electrode of positive polarity and a current electrode of negative polarity (122), respectively.
6. The semiconductor power module (10) of claim 5, wherein the negative polarity current electrode (122) is disposed away from the second leadframe (18).
7. A semiconductor power module (10) according to any of the preceding claims, wherein the semiconductor switching element (12, 14), preferably a diode (14), is based at least partly on a gallium oxide compound.
8. The semiconductor power module (10) according to the preceding claim, wherein the first, second and/or third lead frames (16, 18, 20) are provided by an upper metal layer of a multi-layered substrate, which additionally comprises a lower metal layer and an insulating layer arranged between the upper metal layer and the lower metal layer.
9. Inverter, in particular an inverter, for powering an electric transaxle in an electric and/or hybrid vehicle, comprising one or more semiconductor power modules (10) according to any one of the preceding claims.
10. Electric transaxle for a vehicle, in particular an electric vehicle or a hybrid vehicle, comprising an electric motor, a transmission and a converter, in particular an inverter, according to claim 9.
11. Vehicle, in particular an electric vehicle or a hybrid vehicle, comprising an electric transaxle according to claim 10.
CN202311064270.4A 2022-08-26 2023-08-22 Semiconductor power module with more efficient heat dissipation and improved switching performance Pending CN117637663A (en)

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