CN117626429A - Single crystal growth method and apparatus - Google Patents
Single crystal growth method and apparatus Download PDFInfo
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- CN117626429A CN117626429A CN202410050723.6A CN202410050723A CN117626429A CN 117626429 A CN117626429 A CN 117626429A CN 202410050723 A CN202410050723 A CN 202410050723A CN 117626429 A CN117626429 A CN 117626429A
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- 238000002109 crystal growth method Methods 0.000 title claims abstract description 15
- 239000013078 crystal Substances 0.000 claims abstract description 139
- 238000000034 method Methods 0.000 claims abstract description 87
- 239000010453 quartz Substances 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000002994 raw material Substances 0.000 claims abstract description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- CLOMYZFHNHFSIQ-UHFFFAOYSA-N clonixin Chemical compound CC1=C(Cl)C=CC=C1NC1=NC=CC=C1C(O)=O CLOMYZFHNHFSIQ-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000007547 defect Effects 0.000 description 9
- 238000003466 welding Methods 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007600 charging Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a single crystal growth method and a single crystal growth device, and belongs to the technical field of semiconductor manufacturing. A single crystal growth method applied to a single crystal growth apparatus, the single crystal growth apparatus comprising: a main chamber provided with a quartz crucible for containing a raw material melt and a heater for heating and maintaining the temperature of the quartz crucible; and a pulling chamber connected to an upper portion of the main chamber, for pulling and receiving grown single crystal silicon, the single crystal growth method comprising: acquiring a power compensation value of the heater; compensating a preset first target temperature curve according to the power compensation value to obtain a second target temperature curve of the single crystal growth process; and controlling the power of the heater according to the second target temperature curve during the growth of the single crystal. The technical scheme of the invention can adjust the target temperature curve and improve the product yield of the crystal bar.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a single crystal growth method and a single crystal growth device.
Background
The Czochralski method is a conventional method for growing single crystals, and is also called as CZ method for short. The CZ method features that in a straight cylinder furnace, polysilicon in high purity quartz crucible is heated to melt, and then seed crystal is inserted into the surface of melt for welding, and at the same time the seed crystal is rotated, and the crucible is turned back to lift the seed crystal slowly upwards, and through seeding, shouldering, shoulder turning, isodiametric growth, ending and other steps, crystal rod of required diameter and length is finally produced.
In growing single crystals using the CZ process, a major concern is the prevention of the formation of dislocations, voids, or other defects in the lattice structure. This is because if local defects or dislocations propagate within the single crystal, the entire single crystal cannot be used. Particularly, in the growth process of the single crystal by the Czochralski method, vacancy and interstitial silicon are introduced into the single crystal through a solid-liquid interface, the concentration of the introduced vacancy and interstitial silicon is in a supersaturated state, and the vacancy and interstitial silicon are diffused and aggregated to form vacancy defects (V defects for short) and interstitial defects (I defects for short).
In order to suppress the occurrence of V defects and I defects, it is necessary to control the ratio V/G of the single crystal pulling rate V to the temperature gradient G of the solid-liquid interface within a specific range, and therefore, it is necessary to appropriately control the temperature of the silicon melt and the pulling rate to suppress the occurrence of ingot defects.
In the prior art, a target temperature curve is set during single crystal growth, and then the power of a heater is regulated by using the target temperature curve as a guide to perform the crystal bar growth process. However, as the heater is used, oxidation occurs in the heater, the resistance of the heater is continuously increased, but the resistance change of the heater is not considered in setting the target temperature curve, so that if the power of the heater is still regulated by taking the set target temperature curve as a guide, the yield of the product cannot reach the expected value.
Disclosure of Invention
In order to solve the technical problems, the invention provides a single crystal growth method and a single crystal growth device, which can adjust a target temperature curve and improve the product yield of a crystal bar.
In order to achieve the above purpose, the technical scheme adopted by the embodiment of the invention is as follows:
a single crystal growth method applied to a single crystal growth apparatus, the single crystal growth apparatus comprising: a main chamber provided with a quartz crucible for containing a raw material melt and a heater for heating and maintaining the temperature of the quartz crucible; and a pulling chamber connected to an upper portion of the main chamber, for pulling and receiving grown single crystal silicon, the single crystal growth method comprising:
acquiring a power compensation value of the heater;
compensating a preset first target temperature curve according to the power compensation value to obtain a second target temperature curve of the single crystal growth process;
and controlling the power of the heater according to the second target temperature curve during the growth of the single crystal.
In some embodiments, the obtaining the power compensation value of the heater includes:
acquiring a resistance change value of the heater in the single crystal growth process;
and determining a power compensation value of the heater according to the resistance change value of the heater in the single crystal growth process.
In some embodiments, the determining the power compensation value of the heater based on the resistance change value of the heater during the single crystal growth process comprises:
determining a power compensation value for the heater according to the following formula:
△P＝U 2 /△R；
wherein DeltaP is the power compensation value of the heater, U is the working voltage of the heater,
Δr is the resistance change value of the heater during single crystal growth.
In some embodiments, the obtaining the resistance change value of the heater during the single crystal growth process includes:
acquiring the resistance value of the heater in the previous N times of single crystal growth processes, wherein N is an integer greater than 1;
fitting according to the resistance values of the heater in the previous N times of monocrystal growth processes to obtain a resistance value change curve of the heater;
and predicting the resistance change value of the heater in the single crystal growth process according to the resistance change curve of the heater.
In some embodiments, the compensating the preset first target temperature curve according to the power compensation value includes:
obtaining a compensation amount delta Temp of the first target temperature curve by using the following formula;
△Temp＝△P*k0+d0；
compensating the first target temperature curve according to the compensation quantity of the first target temperature curve;
wherein ΔP is the power compensation value of the heater, and k0 and d0 are preset compensation coefficients.
The embodiment of the invention also provides a single crystal growing device, which comprises: a main chamber provided with a quartz crucible for containing a raw material melt and a heater for heating and maintaining the temperature of the quartz crucible; and a pulling chamber connected to an upper portion of the main chamber, for pulling and accommodating grown silicon single crystal, the single crystal growth apparatus further comprising:
the acquisition module is used for acquiring the power compensation value of the heater;
the compensation module is used for compensating a preset first target temperature curve according to the power compensation value to obtain a second target temperature curve in the single crystal growth process;
and the control module is used for controlling the power of the heater according to the second target temperature curve in the single crystal growth process.
In some embodiments, the acquisition module comprises:
an acquisition unit for acquiring a resistance change value of the heater during the single crystal growth;
and the processing unit is used for determining the power compensation value of the heater according to the resistance change value of the heater in the single crystal growth process.
In some embodiments, the processing unit is specifically configured to determine the power compensation value of the heater according to the following formula:
△P＝U 2 /△R；
wherein DeltaP is the power compensation value of the heater, U is the working voltage of the heater,
Δr is the resistance change value of the heater during single crystal growth.
In some embodiments, the obtaining unit is specifically configured to obtain a resistance value of the heater during the previous N times of single crystal growth, where N is an integer greater than 1; fitting according to the resistance values of the heater in the previous N times of monocrystal growth processes to obtain a resistance value change curve of the heater; and predicting the resistance change value of the heater in the single crystal growth process according to the resistance change curve of the heater.
In some embodiments, the compensation module is specifically configured to obtain the compensation amount Δtemp of the first target temperature curve using the following formula;
△Temp＝△P*k0+d0；
compensating the first target temperature curve according to the compensation quantity of the first target temperature curve;
wherein ΔP is the power compensation value of the heater, and k0 and d0 are preset compensation coefficients.
The beneficial effects of the invention are as follows:
in this embodiment, before setting a second target temperature curve of the single crystal growth process, a power compensation value of the heater is obtained, and a preset first target temperature curve is compensated according to the power compensation value, so as to obtain the second target temperature curve of the single crystal growth process, and in the single crystal growth process, the power of the heater is controlled according to the second target temperature curve. According to the technical scheme, the resistance change condition of the heater is considered, the target temperature curve is adjusted according to the resistance change condition of the heater, and the product yield of the crystal bar can be improved.
Drawings
FIG. 1 is a schematic view showing the structure of a single crystal growing apparatus according to an embodiment of the present invention;
FIG. 2 shows a flow chart of a single crystal growth method according to an embodiment of the present invention.
Reference numerals
1. Heater
2. Acquisition unit
3. Processing unit
4. Main chamber
5. Quartz crucible
6. Lifting chamber
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which are obtained by a person skilled in the art based on the described embodiments of the invention, fall within the scope of protection of the invention.
In the prior art, a target temperature curve is set, and the power of a heater is regulated to perform a single crystal growth process. However, when the single crystal growth process is performed using a designed target temperature profile, the actual temperature cannot be precisely controlled to a desired target temperature. This is because the target temperature profile is designed to take into account only the relationship between heater power and actual temperature and does not reflect changes in other factors, such as the oxidation of the heater causing its resistance to increase continuously, which would lead to deviations in the actual temperature of the control.
In order to solve the technical problems, the invention provides a single crystal growth method and a single crystal growth device, which can adjust a target temperature curve and improve the product yield of a crystal bar.
An embodiment of the present invention provides a single crystal growth method, which is applied to a single crystal growth apparatus, as shown in fig. 1, the single crystal growth apparatus includes: a main chamber 4 in which a quartz crucible 5 for containing a raw material melt and a heater 1 for heating and holding the quartz crucible 5 are disposed; and a pulling chamber 6 connected to an upper portion of the main chamber 4 for pulling up and accommodating grown silicon single crystal, as shown in fig. 2, the single crystal growth method comprising:
step 101: acquiring a power compensation value of the heater;
as the length of time of the heater increases, the heater oxidizes, the resistance of the heater increases, if the power of the heater remains unchanged, the temperature in the main chamber will not reach the expected value, the actual temperature curve in the main chamber deviates from the target temperature curve, and the single crystal growth process cannot be performed according to the target temperature curve, resulting in a decrease in the yield of the ingot product. In this embodiment, the power of the heater can be compensated according to the resistance change condition of the heater.
Specifically, a resistance change value of the heater during the single crystal growth can be obtained; and determining a power compensation value of the heater according to the resistance change value of the heater in the single crystal growth process.
Since the single crystal growth process has not been performed, the resistance change value of the heater during the single crystal growth process cannot be obtained by measurement. The resistance value of the heater in the previous N times of single crystal growth processes can be obtained, wherein N is an integer greater than 1; fitting according to the resistance values of the heater in the previous N times of monocrystal growth processes to obtain a resistance value change curve of the heater; and predicting the resistance change value of the heater in the single crystal growth process according to the resistance change curve of the heater.
The more N is, the more resistance value data is obtained, the more accurate the resistance value change curve of the heater is obtained by fitting, so that the value of N may be greater than 5, for example, may be 6, 8, 10, 12, 15, 20, 30, etc. Preferably, the resistance of the heater is measured from the first time the single crystal growth process is performed by the single crystal growth device, the resistance value and the resistance change condition of the heater are obtained when each single crystal growth process is performed, the resistance change curve of the heater is obtained according to the fitting of the resistance value of the heater when each single crystal growth process is performed, the resistance value of the heater in the single crystal growth process can be predicted according to the resistance change curve of the heater, and the resistance value of the heater in the single crystal growth process is compared with the resistance value of the heater in the current single crystal growth process, so that the resistance change value DeltaR of the heater in the single crystal growth process can be obtained.
In some embodiments, the fitted resistance value change curve of the heater can be represented by the following formula: res (Res) N+1 ＝K 0 *X+Res N Wherein K is 0 For the slope of the resistance change curve, res N+1 Is the n+1st single crystalResistance value, res, of the heater during growth N Is the resistance value of the heater during the N-th single crystal growth.
After obtaining the resistance change value Δr of the heater during the single crystal growth, the power compensation value of the heater may be determined according to the following formula:
△P＝U 2 /△R；
wherein Δp is a power compensation value of the heater, U is a working voltage of the heater, and the working voltage remains unchanged during the working process of the heater, so that the power compensation value of the heater can be obtained by calculating according to the working voltage and a resistance change value Δr of the heater.
Step 102: compensating a preset first target temperature curve according to the power compensation value to obtain a second target temperature curve of the single crystal growth process;
in this embodiment, the first target temperature curve may be a target temperature curve in the last single crystal growth process, or may be a preset target temperature curve, and the second target temperature curve is a target temperature curve in the current single crystal growth process.
Specifically, the compensation amount Δtemp of the first target temperature curve may be obtained using the following formula;
△Temp＝△P*k0+d0；
then compensating the first target temperature curve according to the compensation quantity delta Temp of the first target temperature curve; wherein ΔP is a power compensation value of the heater, k0 and d0 are preset compensation coefficients, and k0 and d0 can be adjusted as required.
The single crystal growth process comprises a plurality of growth stages of charging, melting, welding, thin neck, shouldering, shoulder rotating, equal-diameter growth, ending and the like, and the first target temperature curve comprises temperature values corresponding to the plurality of growth stages in the single crystal growth process, such as temperature T1 corresponding to the melting stage, temperature T2 corresponding to the welding stage, temperature T3 corresponding to the thin neck stage, temperature T4 corresponding to the shouldering stage, temperature T5 corresponding to the shoulder rotating stage, temperature T6 corresponding to the equal-diameter growth stage and temperature T7 corresponding to the ending stage. Compensating the temperature T1 corresponding to the melting stage according to the compensation quantity DeltaTemp to obtain a compensation temperature T1' corresponding to the melting stage; compensating the temperature T2 corresponding to the welding stage according to the compensation quantity delta Temp to obtain a compensation temperature T2' corresponding to the welding stage; compensating the temperature T3 corresponding to the neck stage according to the compensation quantity delta Temp to obtain a compensation temperature T3' corresponding to the neck stage; compensating the temperature T4 corresponding to the shouldering stage according to the compensation quantity delta Temp to obtain a compensation temperature T4' corresponding to the shouldering stage; compensating the temperature T5 corresponding to the shoulder rotating stage according to the compensation quantity delta Temp to obtain a compensation temperature T5' corresponding to the shoulder rotating stage; compensating the temperature T6 corresponding to the equal-diameter growth stage according to the compensation quantity delta Temp to obtain a compensation temperature T6' corresponding to the equal-diameter growth stage; and compensating the temperature T7 corresponding to the ending stage according to the compensation quantity DeltaTemp to obtain the compensation temperature T7' corresponding to the ending stage. And generating a second target temperature curve according to the compensation temperature T1' corresponding to the melting stage, the compensation temperature T2' corresponding to the welding stage, the compensation temperature T3' corresponding to the neck stage, the compensation temperature T4' corresponding to the shoulder stage, the compensation temperature T5' corresponding to the shoulder rotating stage, the compensation temperature T6' corresponding to the constant diameter growth stage and the compensation temperature T7' corresponding to the ending stage.
Step 103: and controlling the power of the heater according to the second target temperature curve during the growth of the single crystal.
In this embodiment, the power of the heater is controlled according to the second target temperature curve, and the actual temperature in the main chamber can be closer to the second target temperature curve due to consideration of the resistance change condition of the heater.
In this embodiment, before setting a second target temperature curve of the single crystal growth process, a power compensation value of the heater is obtained, and a preset first target temperature curve is compensated according to the power compensation value, so as to obtain the second target temperature curve of the single crystal growth process, and in the single crystal growth process, the power of the heater is controlled according to the second target temperature curve. According to the technical scheme, the resistance change condition of the heater is considered, the target temperature curve is adjusted according to the resistance change condition of the heater, and the product yield of the crystal bar can be improved.
The embodiment of the invention also provides a single crystal growing device, as shown in fig. 1, which comprises: a main chamber 4 in which a quartz crucible 5 for containing a raw material melt and a heater 1 for heating and holding the quartz crucible 5 are disposed; and a pulling chamber 6 connected to an upper portion of the main chamber 4, for pulling up and storing grown silicon single crystal, the single crystal growth apparatus further comprising:
the acquisition module is used for acquiring the power compensation value of the heater;
the compensation module is used for compensating a preset first target temperature curve according to the power compensation value to obtain a second target temperature curve in the single crystal growth process;
and the control module is used for controlling the power of the heater according to the second target temperature curve in the single crystal growth process.
In this embodiment, before setting a second target temperature curve of the single crystal growth process, a power compensation value of the heater is obtained, and a preset first target temperature curve is compensated according to the power compensation value, so as to obtain the second target temperature curve of the single crystal growth process, and in the single crystal growth process, the power of the heater is controlled according to the second target temperature curve. According to the technical scheme, the resistance change condition of the heater is considered, the target temperature curve is adjusted according to the resistance change condition of the heater, and the product yield of the crystal bar can be improved.
As the length of time of the heater increases, the heater oxidizes, the resistance of the heater increases, if the power of the heater remains unchanged, the temperature in the main chamber will not reach the expected value, the actual temperature curve in the main chamber deviates from the target temperature curve, and the single crystal growth process cannot be performed according to the target temperature curve, resulting in a decrease in the yield of the ingot product. In this embodiment, the power of the heater can be compensated according to the resistance change condition of the heater.
In some embodiments, as shown in fig. 1, the acquiring module includes:
an acquisition unit 2 for acquiring a resistance change value of the heater during the single crystal growth;
and a processing unit 3 for determining a power compensation value of the heater according to a resistance change value of the heater during the single crystal growth.
In some embodiments, the processing unit is specifically configured to determine the power compensation value of the heater according to the following formula:
△P＝U 2 /△R；
wherein DeltaP is the power compensation value of the heater, U is the working voltage of the heater,
Δr is the resistance change value of the heater during single crystal growth.
In some embodiments, the obtaining unit is specifically configured to obtain a resistance value of the heater during the previous N times of single crystal growth, where N is an integer greater than 1; fitting according to the resistance values of the heater in the previous N times of monocrystal growth processes to obtain a resistance value change curve of the heater; and predicting the resistance change value of the heater in the single crystal growth process according to the resistance change curve of the heater.
Since the single crystal growth process has not been performed, the resistance change value of the heater during the single crystal growth process cannot be obtained by measurement. The resistance value of the heater in the previous N times of single crystal growth processes can be obtained, wherein N is an integer greater than 1; fitting according to the resistance values of the heater in the previous N times of monocrystal growth processes to obtain a resistance value change curve of the heater; and predicting the resistance change value of the heater in the single crystal growth process according to the resistance change curve of the heater.
The more N is, the more resistance value data is obtained, the more accurate the resistance value change curve of the heater is obtained by fitting, so that the value of N may be greater than 5, for example, may be 6, 8, 10, 12, 15, 20, 30, etc. Preferably, the resistance of the heater is measured from the first time the single crystal growth process is performed by the single crystal growth device, the resistance value and the resistance change condition of the heater are obtained when each single crystal growth process is performed, the resistance change curve of the heater is obtained according to the fitting of the resistance value of the heater when each single crystal growth process is performed, the resistance value of the heater in the single crystal growth process can be predicted according to the resistance change curve of the heater, and the resistance value of the heater in the single crystal growth process is compared with the resistance value of the heater in the current single crystal growth process, so that the resistance change value DeltaR of the heater in the single crystal growth process can be obtained.
In some embodiments, the compensation module is specifically configured to obtain the compensation amount Δtemp of the first target temperature curve using the following formula;
△Temp＝△P*k0+d0；
compensating the first target temperature curve according to the compensation quantity of the first target temperature curve;
wherein ΔP is the power compensation value of the heater, and k0 and d0 are preset compensation coefficients.
In this specification, all embodiments are described in a progressive manner, and identical and similar parts of the embodiments are all referred to each other, and each embodiment is mainly described in a different way from other embodiments. In particular, for the embodiments, since they are substantially similar to the product embodiments, the description is relatively simple, and the relevant points are found in the section of the product embodiments.
Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," and the like, as used in this disclosure, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.
It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
In the description of the above embodiments, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is merely specific embodiments of the disclosure, but the protection scope of the disclosure is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the disclosure, and it is intended to cover the scope of the disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (10)
1. A single crystal growth method, characterized by being applied to a single crystal growth apparatus, the single crystal growth apparatus comprising: a main chamber provided with a quartz crucible for containing a raw material melt and a heater for heating and maintaining the temperature of the quartz crucible; and a pulling chamber connected to an upper portion of the main chamber, for pulling and receiving grown single crystal silicon, the single crystal growth method comprising:
acquiring a power compensation value of the heater;
compensating a preset first target temperature curve according to the power compensation value to obtain a second target temperature curve of the single crystal growth process;
and controlling the power of the heater according to the second target temperature curve during the growth of the single crystal.
2. The method of growing a single crystal according to claim 1, wherein the obtaining a power compensation value of the heater includes:
acquiring a resistance change value of the heater in the single crystal growth process;
and determining a power compensation value of the heater according to the resistance change value of the heater in the single crystal growth process.
3. The method of growing a single crystal according to claim 2, wherein the determining the power compensation value of the heater according to the resistance variation value of the heater during the growth of the single crystal comprises:
determining a power compensation value for the heater according to the following formula:
△P＝U 2 /△R；
wherein DeltaP is a power compensation value of the heater, U is a working voltage of the heater, deltaR is a resistance change value of the heater in the single crystal growth process.
4. The method of growing a single crystal according to claim 2, wherein the obtaining a resistance change value of the heater during the growth of the single crystal comprises:
acquiring the resistance value of the heater in the previous N times of single crystal growth processes, wherein N is an integer greater than 1;
fitting according to the resistance values of the heater in the previous N times of monocrystal growth processes to obtain a resistance value change curve of the heater;
and predicting the resistance change value of the heater in the single crystal growth process according to the resistance change curve of the heater.
5. The method of growing a single crystal according to claim 1, wherein the compensating the preset first target temperature profile according to the power compensation value comprises:
obtaining a compensation amount delta Temp of the first target temperature curve by using the following formula;
△Temp＝△P*k0+d0；
compensating the first target temperature curve according to the compensation quantity of the first target temperature curve;
wherein ΔP is the power compensation value of the heater, and k0 and d0 are preset compensation coefficients.
6. A single crystal growth apparatus, characterized in that the single crystal growth apparatus comprises: a main chamber provided with a quartz crucible for containing a raw material melt and a heater for heating and maintaining the temperature of the quartz crucible; and a pulling chamber connected to an upper portion of the main chamber, for pulling and accommodating grown silicon single crystal, the single crystal growth apparatus further comprising:
the acquisition module is used for acquiring the power compensation value of the heater;
the compensation module is used for compensating a preset first target temperature curve according to the power compensation value to obtain a second target temperature curve in the single crystal growth process;
and the control module is used for controlling the power of the heater according to the second target temperature curve in the single crystal growth process.
7. The single crystal growth apparatus of claim 6, wherein the acquisition module comprises:
an acquisition unit for acquiring a resistance change value of the heater during the single crystal growth;
and the processing unit is used for determining the power compensation value of the heater according to the resistance change value of the heater in the single crystal growth process.
8. The single crystal growing apparatus according to claim 7, wherein,
the processing unit is specifically configured to determine a power compensation value of the heater according to the following formula:
△P＝U 2 /△R；
wherein DeltaP is a power compensation value of the heater, U is a working voltage of the heater, deltaR is a resistance change value of the heater in the single crystal growth process.
9. The single crystal growing apparatus according to claim 7, wherein,
the acquisition unit is specifically used for acquiring the resistance value of the heater in the previous N times of single crystal growth processes, wherein N is an integer greater than 1; fitting according to the resistance values of the heater in the previous N times of monocrystal growth processes to obtain a resistance value change curve of the heater; and predicting the resistance change value of the heater in the single crystal growth process according to the resistance change curve of the heater.
10. The single crystal growing apparatus according to claim 6, wherein,
the compensation module is specifically configured to obtain a compensation amount Δtemp of the first target temperature curve by using the following formula;
△Temp＝△P*k0+d0；
compensating the first target temperature curve according to the compensation quantity of the first target temperature curve;
wherein ΔP is the power compensation value of the heater, and k0 and d0 are preset compensation coefficients.
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