CN117581375A - 光检测装置及其制造方法 - Google Patents

光检测装置及其制造方法 Download PDF

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Publication number
CN117581375A
CN117581375A CN202280045280.0A CN202280045280A CN117581375A CN 117581375 A CN117581375 A CN 117581375A CN 202280045280 A CN202280045280 A CN 202280045280A CN 117581375 A CN117581375 A CN 117581375A
Authority
CN
China
Prior art keywords
film
substrate
light
detection device
light shielding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280045280.0A
Other languages
English (en)
Chinese (zh)
Inventor
藤崎裕太郎
荻田知治
池原成拓
大庭义行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN117581375A publication Critical patent/CN117581375A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G01J2001/4466—Avalanche
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202280045280.0A 2021-08-16 2022-04-21 光检测装置及其制造方法 Pending CN117581375A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021132445 2021-08-16
JP2021-132445 2021-08-16
PCT/JP2022/018349 WO2023021787A1 (ja) 2021-08-16 2022-04-21 光検出装置およびその製造方法

Publications (1)

Publication Number Publication Date
CN117581375A true CN117581375A (zh) 2024-02-20

Family

ID=85240363

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280045280.0A Pending CN117581375A (zh) 2021-08-16 2022-04-21 光检测装置及其制造方法

Country Status (6)

Country Link
US (1) US20250123144A1 (https=)
EP (1) EP4391061A4 (https=)
JP (1) JPWO2023021787A1 (https=)
KR (1) KR20240042421A (https=)
CN (1) CN117581375A (https=)
WO (1) WO2023021787A1 (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330440A (ja) * 1998-05-11 1999-11-30 Nec Corp 固体撮像装置及びその製造方法
JP6299058B2 (ja) 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
US9543346B2 (en) * 2013-03-29 2017-01-10 Sony Corporation Imaging element and imaging device
JP5943025B2 (ja) * 2014-04-03 2016-06-29 ソニー株式会社 固体撮像装置、及び電子機器
JP7058479B2 (ja) 2016-10-18 2022-04-22 ソニーセミコンダクタソリューションズ株式会社 光検出器
JP2019114728A (ja) * 2017-12-26 2019-07-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、距離計測装置、及び製造方法
JP7175159B2 (ja) 2018-11-05 2022-11-18 ソニーセミコンダクタソリューションズ株式会社 撮像素子および製造方法、並びに電子機器
US10811453B1 (en) * 2019-11-01 2020-10-20 Omnivision Technologies, Inc. Pillar structures for suppressing optical cross-talk
TWI865665B (zh) * 2019-12-02 2024-12-11 日商索尼半導體解決方案公司 攝像裝置及其製造方法以及電子機器
US12324266B2 (en) * 2020-02-06 2025-06-03 Sony Semiconductor Solutions Corporation Solid-state imaging device and electronic device

Also Published As

Publication number Publication date
WO2023021787A1 (ja) 2023-02-23
EP4391061A4 (en) 2025-06-25
KR20240042421A (ko) 2024-04-02
EP4391061A1 (en) 2024-06-26
TW202310376A (zh) 2023-03-01
JPWO2023021787A1 (https=) 2023-02-23
US20250123144A1 (en) 2025-04-17

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