CN117558766A - Back contact solar cell, preparation method thereof and photovoltaic module - Google Patents
Back contact solar cell, preparation method thereof and photovoltaic module Download PDFInfo
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- CN117558766A CN117558766A CN202310729869.9A CN202310729869A CN117558766A CN 117558766 A CN117558766 A CN 117558766A CN 202310729869 A CN202310729869 A CN 202310729869A CN 117558766 A CN117558766 A CN 117558766A
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- 238000002360 preparation method Methods 0.000 title abstract description 11
- 230000005540 biological transmission Effects 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000002161 passivation Methods 0.000 claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 58
- 239000010703 silicon Substances 0.000 claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 57
- 230000004888 barrier function Effects 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 12
- 230000000903 blocking effect Effects 0.000 abstract description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 239000002313 adhesive film Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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Abstract
The invention provides a back contact solar cell, a preparation method thereof and a photovoltaic module, and relates to the technical field of photovoltaics. The back contact solar cell includes: the silicon substrate is respectively positioned on the first transmission layer, the second transmission layer, the blocking layer and the transparent conductive layer at the backlight side of the silicon substrate; the first transmission layers and the second transmission layers are alternately arranged on the silicon substrate; the barrier layer is positioned on an end region of the first transmission layer, which is close to the second transmission layer; the second transmission layer also has an island portion overlying the barrier layer; an insulating opening is formed in the transparent conductive layer; the insulating opening penetrates the transparent conductive layer and extends into the island portion, and the insulating opening extends up to the surface of the barrier layer adjacent to the silicon substrate. In the invention, the insulating opening is deeper, the broken layers are more, and the insulating effect is better. The insulating openings do not damage the first transport layer, which maintains good electrical and passivation properties.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a back contact solar cell, a preparation method thereof and a photovoltaic module.
Background
Solar cells are devices that directly convert light energy into electrical energy. Through decades of development, the current crystalline silicon solar cells occupy absolute advantages in the photovoltaic cell market, and the main reasons are wide sources of raw materials, high reliability, high power generation efficiency, low cost and the like. Crystalline silicon cells currently cover a variety of types including passivated emitter and back cells (PERC), tunnel oxide passivation contact cells (TOPcon), and heterojunction cells (SHJ). Among them, crystalline silicon-amorphous silicon heterojunction solar cells (SHJ) have gradually become one of the mainstream technologies of crystalline silicon cells due to their symmetrical structure, high open-circuit voltage, low process temperature, excellent temperature characteristics, etc., and have been highly focused by industry and academia, and currently the efficiency of the authenticated large-area cell devices has reached 26.3%. In addition, the efficiency of the TOPCon battery also reaches 25.7%, and the TOPCon battery also has the advantage of low cost. The SHJ and TOPcon batteries still have some problems, and the light incident surface of the battery is shielded by a grid line, so that the absorption of sunlight by the battery is reduced, and the short-circuit current loss of the battery is large, which is also a problem faced by almost all current silicon-based solar batteries. Therefore, the cell research of the solar cell without the electrode on the light incident surface is particularly important, and the back contact solar cell can solve the problem based on the research, and the electrode is arranged on the back surface of the cell, so that the short-circuit current loss caused by the upper surface can be reduced to the minimum. In this cell structure, the front surface has no grid line, and the whole area is used for absorbing sunlight; the back of the battery is provided with an electron selective transmission layer and a hole selective transmission layer, and the currently adopted main stream arrangement mode is interdigital back contact arrangement like a comb, namely IBC solar battery for short. The back contact heterojunction solar cell (SHJ-IBC) may therefore be referred to simply as HBC cell and the back contact tunneling oxide passivation contact cell (TOPcon-IBC) as TBC.
Disclosure of Invention
The invention provides a back contact solar cell, a preparation method thereof and a photovoltaic module, and aims to solve the problem of poor insulation effect in the existing back contact solar cell.
In a first aspect of the present invention, there is provided a back contact solar cell comprising:
the silicon substrate is respectively positioned on the first transmission layer, the second transmission layer, the barrier layer and the transparent conductive layer on the first side of the silicon substrate; the first transmission layer and the second transmission layer are alternately arranged on the silicon substrate; the barrier layer is positioned on an end region of the first transmission layer adjacent to the second transmission layer; the second transmission layer also has an island portion overlying the barrier layer; the transparent conductive layer covers the part of the first transmission layer which is not covered by the barrier layer and covers the second transmission layer; an insulating opening is formed in the transparent conductive layer; the insulating opening electrically isolates the first and second transmission layers; the insulating opening penetrates the transparent conductive layer and extends into the island portion, the insulating opening extending up to a surface of the barrier layer adjacent the silicon substrate.
In the embodiment of the invention, the transparent conductive layer is provided with the insulating opening, the insulating opening electrically isolates the first transmission layer from the second transmission layer, the insulating opening penetrates through the transparent conductive layer and extends into the island part of the second transmission layer, and the insulating opening penetrates through the transparent conductive layer along the thickness direction of the silicon substrate, and also breaks at least part of the area of the island part of the second transmission layer, so that the insulating opening is deeper, the broken layers are more, and the insulating effect is better. The insulating opening extends to the surface of the blocking layer close to the silicon substrate at most, and a first transmission layer is arranged between the blocking layer and the silicon substrate in the back contact solar cell. In summary, the back contact solar cell of the invention has better insulation effect and higher photoelectric conversion efficiency.
Optionally, the insulating opening includes: the grooves are distributed at intervals along the first direction; the spacing between adjacent grooves is equal.
Optionally, the shape of the groove is arc-shaped, or the shape of the groove is linear.
Optionally, the spacing between adjacent grooves is 1 to 1000 microns.
Optionally, the depth of the groove is 1nm to 1000nm.
Optionally, the insulating opening penetrating portion and the second transmission layer form the island portion and extend into the barrier layer.
Optionally, the insulating opening is formed by laser melting at least part of the transparent conductive layer and at least part of the second transmission layer; the back contact solar cell further comprises: a mixed layer formed of a laser-melted substance; the mixed layer is positioned on the barrier layer, and the insulating opening penetrates through the mixed layer and extends into the barrier layer.
Optionally, the first transmission layer includes: a back first passivation layer and a first doping layer which are stacked; the back first passivation layer is closer to the silicon substrate than the first doped layer; the second transport layer includes: a back second passivation layer and a second doped layer which are stacked; the back second passivation layer is closer to the silicon substrate than the second doped layer; the doping types of the first doping layer and the second doping layer are different;
the insulating opening penetrates the second doped layer and extends into the backside second passivation layer.
Optionally, the materials of the back first passivation layer and the back second passivation layer are selected from: amorphous silicon; the materials of the first doping layer and the second doping layer are selected from doped amorphous silicon or doped microcrystalline silicon;
or, the materials of the back first passivation layer and the back second passivation layer are selected from the following materials: silicon oxide; the materials of the first doped layer and the second doped layer are selected from doped polycrystalline silicon or doped microcrystalline silicon.
Optionally, the back contact solar cell further includes: the first electrode is positioned on the transparent conductive layer, and the first transmission layer is positioned at a position corresponding to the first electrode; the second electrode is positioned on the transparent conductive layer, and the second transmission layer is positioned at a corresponding position;
the back contact solar cell further comprises: the front passivation layer and the front antireflection layer are sequentially laminated on the second side of the silicon substrate; the first side and the second side are relatively distributed.
In a second aspect of the present invention, there is provided a method for manufacturing any one of the aforementioned back contact solar cells, comprising:
providing a conductive substrate; the conductive substrate includes: the silicon substrate is respectively positioned on the first transmission layer, the second transmission layer, the barrier layer and the transparent conductive layer on the first side of the silicon substrate; the first transmission layer and the second transmission layer are alternately arranged on the silicon substrate; the barrier layer is positioned on an end region of the first transmission layer adjacent to the second transmission layer; the second transmission layer also has an island portion overlying the barrier layer; the transparent conductive layer covers the part of the first transmission layer which is not covered by the barrier layer and covers the second transmission layer;
and forming an insulating opening on the transparent conductive layer by adopting laser.
Optionally, the wavelength of the laser is at least one of 355nm, 532nm and 1064 nm;
and/or the pulse width of the laser is 50ps to 100ns;
and/or the energy of the laser is 0.1w to 50w.
In a third aspect of the present invention, there is provided a photovoltaic module comprising: a plurality of any of the foregoing back contact solar cells.
The preparation method of the back contact solar cell and the photovoltaic module have the same or similar beneficial effects as any one of the back contact solar cells, and in order to avoid repetition, the description is omitted here.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments of the present invention will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 shows a schematic structure of a back contact solar cell according to an embodiment of the present invention;
fig. 2 shows a schematic partial structure of a first back contact solar cell in an embodiment of the invention;
FIG. 3 is a schematic view showing a partial structure of a second back contact solar cell in an embodiment of the present invention;
fig. 4 shows a schematic partial structure of a third back contact solar cell in an embodiment of the invention;
FIG. 5 shows a scanning electron microscope image of a back contact solar cell at an insulated opening in an embodiment of the invention;
FIG. 6 shows a schematic top view of an insulating opening of a back contact solar cell in an embodiment of the invention;
FIG. 7 illustrates a schematic top view of an insulating opening of another back contact solar cell in an embodiment of the invention;
fig. 8 to 13 are schematic views showing a manufacturing process of a back contact solar cell in an embodiment of the present invention.
Description of the drawings:
1-silicon substrate, 111-first surface of silicon substrate, 222-second surface of silicon substrate, 2-back first passivation layer, 3-first doped layer, 4-barrier layer, 5-mask layer, 6-first opening, 7-back second passivation layer, 8-second doped layer, 9-front passivation layer, 10-front anti-reflection layer, 11-second opening, 12-transparent conductive layer, 13-insulating opening, 131-recess, 14-first electrode, 15-first transmission layer, 16-mixed layer, 17-second electrode, 18-island portion.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The back contact solar cell has the advantages that the electrode is arranged on the back surface, so that the short-circuit current loss caused by the light-facing surface can be reduced to the minimum, and in the cell structure, the light-facing surface has no grid line, and the whole area is used for absorbing sunlight, so that the back contact solar cell has great advantages. In existing back contact solar cells, insulating openings are typically provided through the transparent conductive layer to reduce shorting problems. However, the inventors found that: in the existing back contact solar cell, the insulating opening only penetrates through the transparent conductive layer, so that the insulating effect is poor.
Fig. 1 shows a schematic structure of a back contact solar cell according to an embodiment of the present invention. Fig. 2 shows a schematic partial structure of a first back contact solar cell in an embodiment of the invention. Fig. 3 shows a schematic partial structure of a second back contact solar cell in an embodiment of the invention. Fig. 4 shows a schematic partial structure of a third back contact solar cell in an embodiment of the invention. Fig. 5 shows a scanning electron microscope image of an insulating opening of a back contact solar cell in an embodiment of the invention. I.e. fig. 5 is a SEM (scanning electron microscope) view at the insulating opening 13. Fig. 6 shows a schematic top view of an insulating opening of a back contact solar cell in an embodiment of the invention. Fig. 7 shows a schematic top view of an insulating opening of another back contact solar cell in an embodiment of the invention. Fig. 5, 6 and 7 are mainly schematic views of the broken oval frame in fig. 1. The top view herein refers to a schematic view from the back light surface of the back contact solar cell to the light facing surface. The back-contact solar cell has a backlight surface that is closer to the electrodes of the back-contact solar cell.
Referring to fig. 1 to 4, the back contact solar cell may include: a silicon substrate 1, a first transport layer 15, a second transport layer, a barrier layer 4 and a transparent conductive layer 12, all located on a first side of the silicon substrate 1. The doping type of the silicon substrate 1 may be N-type doping, P-type doping, or the like, and the doping type of the silicon substrate 1 is not particularly limited. In fig. 1, 111 is a first surface of the silicon substrate 1, 222 is a second surface of the silicon substrate 1, the first side is a side of the silicon substrate 1 close to the electrode in the back contact solar cell, the first surface 111 is a surface of the silicon substrate 1 close to the electrode in the back contact solar cell, and the second surface 222 and the first surface 111 are distributed relatively. The doping types of the first transmission layer 15 and the second transmission layer are different, that is, one of the two is N-type doping and the other is P-type doping. The first transport layer 15 and the second transport layer are alternately disposed on the silicon substrate 1. The barrier layer 4 is located on the end region of the first transport layer 15 adjacent to the second transport layer which also has island portions 18 overlying the barrier layer 4. The transparent conductive layer 12 covers the portion of the first transmission layer 15 not covered by the barrier layer 4 and the second transmission layer.
The transparent conductive layer 12 is provided with an insulating opening 13, and the insulating opening 13 electrically isolates the first transmission layer 15 from the second transmission layer, so as to reduce the short circuit problem. The insulating opening 13 penetrates the transparent conductive layer 12 and extends into the island portion 18 of the second transmission layer, which means that, along the thickness direction L1 of the silicon substrate 1, the insulating opening 13 penetrates not only the transparent conductive layer 12 but also breaks the second transmission layer to form the island portion 18, the insulating opening 13 is arranged deeper, the broken layers are more, and the insulating effect is better.
The insulating opening 13 extends at most to the surface of the barrier layer 4 near the silicon substrate 1, and in the back contact solar cell, a first transmission layer 15 is further arranged between the barrier layer 4 and the silicon substrate 1, and the insulating opening 13 extends at most to the surface of the barrier layer 4 near the silicon substrate 1, i.e. the insulating opening 13 does not damage the first transmission layer 15 between the barrier layer 4 and the silicon substrate 1, and the first transmission layer 15 maintains good electrical performance, passivation performance and the like.
In summary, the back contact solar cell of the invention has better insulation effect and higher photoelectric conversion efficiency.
Alternatively, referring to fig. 1 to 7, the insulating opening 13 includes: the plurality of grooves 131 are spaced apart from each other along the first direction. The distance D3 between adjacent grooves 131 is equal. In the case where the insulating opening 13 is formed by laser light, the distance D3 between the adjacent grooves 131 is mainly determined by the frequency of the laser light. The first direction is not particularly limited herein. For example, the first direction may be parallel to the direction of distribution of the first transport layer 15 and the second transport layer on the silicon substrate 1. In the prior art, the cross section of the insulating opening is planar, and in the present invention, the groove 131 has a larger surface area relative to the planar surface, so that the insulating opening 13 provides a larger reflective surface, thereby improving the light reflection of the first surface of the back contact solar cell, improving the utilization rate of sunlight, and further improving the photoelectric conversion efficiency of the back contact solar cell. For example, referring to fig. 5, a plurality of grooves 131 are clearly seen to be spaced apart, and the distance D3 between adjacent grooves 131 is equal.
Alternatively, referring to fig. 6, the shape of the groove 131 is arc-shaped, or, referring to fig. 7, the shape of the groove 131 is straight, and the shape of the groove 131 is flexible and various and easy to manufacture.
Alternatively, referring to fig. 6, the distance D3 between adjacent grooves 131 is 1 to 1000 micrometers. Here, the distance D3 between adjacent grooves 131 may be a distance between geometric centers of two adjacent grooves 131. The interval D3 between the adjacent grooves 131 is within this range, and is easy to manufacture.
For example, the spacing D3 between adjacent grooves 131 is 1 micron, or 45 microns, or 103 microns, or 210 microns, or 330 microns, or 410 microns, or 500 microns, or 720 microns, or 1000 microns.
Alternatively, referring to fig. 2, 3, and 4, the depth D1 of the groove 131 is 1nm to 1000nm, and in this depth range, the groove 131 generally does not penetrate onto the first transmission layer 15, and the first transmission layer 15 maintains good electrical performance, passivation performance, and the like.
More specifically, referring to fig. 2 and 3, the distance D2 between the recess 131 near the bottom of the silicon substrate 1 and the side of the first transmission layer 15 away from the silicon substrate 1 is greater than 0, so as to ensure that the recess 131 does not penetrate onto the first transmission layer 15.
For example, the depth D1 of the groove 131 is 1nm, or 50nm, or 100 nm, or 203 nm, or 420 nm, or 500nm, or 502 nm, or 610 nm, or 722 nm, or 930 nm, or 1000nm.
Optionally, referring to fig. 2, the insulating opening 13 penetrates the second transmission layer to form an island portion 18 and extends into the barrier layer 4, and the insulating opening 13 is deeper, so that not only the transparent conductive layer 12 is disconnected, but also the second doped layer 8 and the second passivation layer 7 on the back in the second transmission layer are disconnected, and a part of the barrier layer 4 is disconnected, so that the insulating effect is better. Moreover, the insulating opening 13 does not damage the first transmission layer 15, and the first transmission layer 15 maintains good electrical performance, passivation performance, and the like.
Alternatively, referring to fig. 3, the insulating opening 13 is formed by laser melting at least part of the transparent conductive layer 12, at least part of the second transmission layer. The back contact solar cell further comprises: a mixed layer 16 formed of a laser-melted material. The mixed layer 16 is positioned on the barrier layer 4, the insulating opening 13 penetrates through the mixed layer 16 and extends into the barrier layer 4, and the insulating opening 13 is deeper, so that not only is the transparent conductive layer 12 disconnected, but also the mixed layer 16 is disconnected, and part of the barrier layer 4 is disconnected, and the insulating effect is better. Moreover, the insulating opening 13 does not damage the first transmission layer 15, and the first transmission layer 15 maintains good electrical performance, passivation performance, and the like. Since the mixed layer 16 formed of the material melted by the laser has poor conductivity, the back contact solar cell can maintain good insulating performance.
Alternatively, referring to fig. 1 to 4, the first transmission layer 15 includes: the back first passivation layer 2 and the first doped layer 3 are stacked, and the back first passivation layer 2 is closer to the silicon substrate 1 than the first doped layer 3. The second transport layer includes: a rear second passivation layer 7 and a second doped layer 8 are stacked, the rear second passivation layer 7 being closer to the silicon substrate 1 than the second doped layer 8. The doping types of the first doping layer 3 and the second doping layer 8 are different, namely, one of the two doping layers is an N-type doping layer, and the other doping layer is a P-type doping layer. Referring to fig. 4, the insulating opening 13 penetrates the second doped layer 8 in the second transmission layer and extends into the rear second passivation layer 7 in the second transmission layer, and the insulating opening 13 is deeper, so that not only the transparent conductive layer 12 but also the second doped layer 8 of the second transmission layer and part of the rear second passivation layer 7 are disconnected, and the insulating effect is better. Moreover, the insulating opening 13 does not damage the first transmission layer 15, and the first transmission layer 15 maintains good electrical performance, passivation performance, and the like.
In fig. 2, 3 and 4, the insulating opening 13 shown in fig. 2 is provided deeper, the number of broken layers is larger, and no laser melted material remains, so that the insulating effect corresponding to the insulating opening 13 shown in fig. 2 is better. Meanwhile, in fig. 3 and 4, the insulating opening 13 is provided deeper than in the related art, and thus, has a better insulating effect than in the related art.
Optionally, the materials of the back first passivation layer 2 and the back second passivation layer 7 are selected from: the materials of the amorphous silicon, the first doped layer 3 and the second doped layer 8 are each selected from: the back contact solar cell is an HBC (Heterojunction back contact ) cell, and has the advantages of high open-circuit voltage, low process temperature, excellent temperature characteristics and the like.
Or, alternatively, the materials of the back first passivation layer 2 and the back second passivation layer 7 are selected from: the materials of the silicon oxide, the first doped layer 3 and the second doped layer 8 are each selected from: the back contact solar cell is a TBC (Tunnel Oxide Passivated Contactbackcontact, tunneling oxide back contact) cell, and has the advantages of high open circuit voltage, low process temperature, excellent temperature characteristics and the like.
Optionally, referring to fig. 1, the back contact solar cell further includes: a first electrode 14 and a second electrode 17 on the first side of the silicon substrate, the first electrode 14 is located on the transparent conductive layer 12, the first transmission layer 15 is located at a position corresponding to the first transmission layer, and the second electrode 17 is located on the transparent conductive layer 12, and the second transmission layer is located at a position corresponding to the second transmission layer. The first electrode 14 and the second electrode 17 are both metal electrodes, and specific materials are not limited.
Optionally, referring to fig. 1, the back contact solar cell further includes: the front passivation layer 9 and the front anti-reflection layer 10 of the second surface 222 on the second side of the silicon substrate 1 are sequentially stacked. The first side and the second side are oppositely distributed.
The invention also provides a preparation method of the back contact solar cell, which can comprise the following steps.
Step S1, providing a conductive matrix; the conductive substrate includes: the silicon substrate is respectively positioned on the first transmission layer, the second transmission layer, the barrier layer and the transparent conductive layer on the first side of the silicon substrate; the first transmission layer and the second transmission layer are alternately arranged on the silicon substrate; the barrier layer is positioned on an end region of the first transmission layer adjacent to the second transmission layer; the second transmission layer also has an island portion overlying the barrier layer; the transparent conductive layer overlies portions of the first transmission layer not covered by the barrier layer, and overlies the second transmission layer.
The conductive substrate can refer to the relevant description of the back contact solar cell, and can achieve the same or similar beneficial effects, and in order to avoid repetition, the description is omitted here. The method for preparing each layer in the conductive substrate is not particularly limited.
Fig. 8 to 13 are schematic views showing a manufacturing process of a back contact solar cell in an embodiment of the present invention. For example, a conductive substrate in the present invention may be as shown in fig. 12.
And S2, forming an insulating opening on the transparent conductive layer by adopting laser.
For example, referring to fig. 13, an insulating opening 13 is formed on the transparent conductive layer 12 by using a laser, and the opening depth, shape, etc. of the insulating opening are referred to in the description related to the back contact solar cell, and the same or similar beneficial effects can be achieved, so that the repetition is avoided and the description is omitted here.
The preparation method of the back contact solar cell adopts laser to form the insulating opening, and compared with the method of forming the insulating opening by a mask and a wet method, the preparation method has the advantages of lower cost and shorter process time.
Optionally, in the step S2, the wavelength of the laser is at least one of 355nm, 532nm and 1064nm, and the laser is easy to obtain and has low cost.
And/or, optionally, in the step S2, the pulse width of the laser is 50ps (picosecond) to 100ns, so that the size of the groove 131 formed thereby is suitable, and the light reflection on the first surface is significant. For example, the pulse width of the laser is 50ps, or 90ps, or 680ps, or 990ps, or 1ns, or 12ns, or 23ns, or 40ns, or 50ns, or 72ns, or 91ns, or 100ns.
And/or, optionally, in the step S2, the energy of the laser is 0.1w to 50w, so that the depth of the insulating opening 13, the size of the groove 131, etc. formed thereby are suitable, and the light reflection on the first surface is significant. For example, the energy of the laser is 0.1w, or 0.8w, or 1w, or 8.2w, or 10w, or 16w, or 25w, or 26w, or 40w, or 50w.
The invention also provides a photovoltaic module comprising: any of the aforementioned back contact solar cells is not particularly limited as to whether the photovoltaic module further includes other structures. For example, the photovoltaic module may further include: the back contact solar cell comprises a front packaging adhesive film, a cover plate, a rear packaging adhesive film and a back plate, wherein the front packaging adhesive film and the cover plate are sequentially positioned on the light side of the back contact solar cell, and the rear packaging adhesive film and the back plate are sequentially positioned on the backlight side of the back contact solar cell.
It should be noted that, the preparation method of the back contact solar cell, the photovoltaic module, and the back contact solar cell may be referred to each other, and have the same or similar beneficial effects as any of the foregoing back contact solar cells, so that repetition is avoided and no further description is provided herein.
The invention will be further explained below with reference to specific examples.
Example 1
Referring to fig. 8, a back first passivation layer 2, a first doping layer 3, a barrier layer 4, and a mask layer 5 are sequentially deposited on a first surface 111 of a silicon substrate 1 using PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma-enhanced chemical vapor deposition), and the material of the back first passivation layer 2 is intrinsic amorphous silicon. The thickness of the first passivation layer 2 on the back is 1nm (nanometer) to 50nm, the thickness of the first doped layer 3 is 3nm-50nm, and the thickness of the blocking layer 4 is 10nm-1000nm. The mask layer 5 is made of intrinsic amorphous silicon and has a thickness of 3nm-500nm. The first doped layer 3 is an N-type amorphous silicon layer, and the barrier layer 4 can be SiN x (silicon nitride) or SiO x (silicon oxide) layer. X in the chemical formula is larger than 0.
As shown in fig. 9, a laser or a mask plus wet etching is used to pattern out part of the barrier layer 4 and the underlying back first passivation layer 2 and the first doped layer 3, thereby forming a patterned first opening 6.
As shown in fig. 10, a backside second passivation layer 7 and a second doped layer 8 are sequentially deposited on the first side of the silicon substrate 1 using PECVD. The material of the back second passivation layer 7 is intrinsic amorphous silicon. The thickness of the back second passivation layer 7 is 1nm-50nm. The thickness of the second doped layer 8 is 3nm-50nm. A front passivation layer 9 and a front anti-reflection layer 10 are sequentially deposited on the second surface 222 of the silicon substrate 1 using PECVD. The material of the front passivation layer 9 is intrinsic amorphous silicon. The front passivation layer 9 has a thickness of 1nm to 50nm. The thickness of the front side anti-reflection layer 10 is 10nm to 500nm. The second doped layer 8 can be a P-type amorphous silicon layer, and the front side antireflection layer 10 can be SiN x Or SiO x A layer.
As shown in fig. 11, a part of the barrier layer 4, the rear second passivation layer 7 and the second doped layer 8 on the first doped layer 3 is removed in a pattern. For example, the second opening 11 may be formed using laser removal or wet etching removal.
As shown in fig. 12, the transparent conductive layer 12 is deposited on the first side using PVD (Physical Vapor Deposition ), the transparent conductive layer 12 having a thickness of 10nm to 500nm.
As shown in fig. 13, the transparent conductive layer 12 on top of the barrier layer 4 is removed by patterning using a laser to form an insulating opening 13. In this step, the wavelength of the laser light used is: 355nm, pulse width 50ns and laser energy 20w, the depth of the formed insulating opening 13 is shown in fig. 2, namely, the insulating opening 13 penetrates through the transparent conductive layer 12, penetrates through the second doped layer 8 in the second transmission layer and the back second passivation layer 7 and extends into the barrier layer 4, and the insulating opening 13 does not enter the first transmission layer 15, and simultaneously, the material of the transparent conductive layer 12, the second doped layer 8 and the back second passivation layer 7 after melting does not exist on the back contact solar cell. The recess 131 is formed in the shape of an arc as shown in fig. 5. At the insulating opening 13 of the back contact solar cell, electron microscope scanning is performed, and the scanning electron microscope image obtained is shown in fig. 5, and a plurality of grooves 131 distributed at intervals can be clearly seen. The distance D3 between adjacent grooves 131 is equal.
As shown in fig. 1, the conductive silver paste is printed on the transparent conductive layer 12 and cured to form the first electrode 14 and the second electrode 17, and the preparation method of the electrodes is not particularly limited.
The back contact solar cell prepared in example 1 was HBC structure.
Example 2
The difference from embodiment 1 is in the difference in battery type. The materials of the back first passivation layer 2 and the back second passivation layer 7 are SiO x The material of the first doped layer 3 and the second doped layer 8 is doped polysilicon. The back contact solar cell formed in example 2 was a TBC structure. The remainder of example 2 corresponds to example 1.
It should be noted that, for simplicity of description, the method embodiments are shown as a series of acts, but it should be understood by those skilled in the art that the embodiments are not limited by the order of acts described, as some steps may occur in other orders or concurrently in accordance with the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred, and that the acts referred to are not necessarily all required for the embodiments of the present application.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
From the above description of the embodiments, it will be clear to those skilled in the art that the above-described embodiment method may be implemented by means of software plus a necessary general hardware platform, but of course may also be implemented by means of hardware, but in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present invention may be embodied essentially or in a part contributing to the prior art in the form of a software product stored in a storage medium (e.g. ROM/RAM, magnetic disk, optical disk) comprising instructions for causing a terminal (which may be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to perform the method according to the embodiments of the present invention.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present invention and the scope of the claims, which are to be protected by the present invention.
Claims (13)
1. A back contact solar cell, comprising:
the silicon substrate is respectively positioned on the first transmission layer, the second transmission layer, the barrier layer and the transparent conductive layer on the first side of the silicon substrate; the first transmission layer and the second transmission layer are alternately arranged on the silicon substrate; the barrier layer is positioned on an end region of the first transmission layer adjacent to the second transmission layer; the second transmission layer also has an island portion overlying the barrier layer; the transparent conductive layer covers the part of the first transmission layer which is not covered by the barrier layer and covers the second transmission layer; an insulating opening is formed in the transparent conductive layer; the insulating opening electrically isolates the first and second transmission layers; the insulating opening penetrates the transparent conductive layer and extends into the island portion, the insulating opening extending up to a surface of the barrier layer adjacent the silicon substrate.
2. The back contact solar cell of claim 1, wherein the insulating opening comprises: the grooves are distributed at intervals along the first direction; the spacing between adjacent grooves is equal.
3. The back contact solar cell of claim 2, wherein the shape of the groove is an arc shape or the shape of the groove is a straight line shape.
4. The back contact solar cell of claim 2, wherein a pitch between adjacent ones of the grooves is 1 to 1000 microns.
5. The back contact solar cell of claim 2, wherein the depth of the grooves is 1nm to 1000nm.
6. The back contact solar cell of any one of claims 1-5, wherein said insulating opening penetrating portion said second transmission layer forms said island portion and extends into said barrier layer.
7. The back contact solar cell of any one of claims 1 to 5, wherein said insulating opening is formed by laser melting at least part of a transparent conductive layer, at least part of said second transmission layer; the back contact solar cell further comprises: a mixed layer formed of a laser-melted substance; the mixed layer is positioned on the barrier layer, and the insulating opening penetrates through the mixed layer and extends into the barrier layer.
8. The back contact solar cell of any one of claims 1 to 5, wherein the first transmission layer comprises: a back first passivation layer and a first doping layer which are stacked; the back first passivation layer is closer to the silicon substrate than the first doped layer; the second transport layer includes: a back second passivation layer and a second doped layer which are stacked; the back second passivation layer is closer to the silicon substrate than the second doped layer; the doping types of the first doping layer and the second doping layer are different;
the insulating opening penetrates the second doped layer and extends into the backside second passivation layer.
9. The back contact solar cell of claim 8, wherein the material of the back first passivation layer and the back second passivation layer are each selected from the group consisting of: amorphous silicon; the materials of the first doping layer and the second doping layer are selected from doped amorphous silicon or doped microcrystalline silicon; the method comprises the steps of carrying out a first treatment on the surface of the
Or, the materials of the back first passivation layer and the back second passivation layer are selected from the following materials: silicon oxide; the materials of the first doped layer and the second doped layer are selected from doped polycrystalline silicon or doped microcrystalline silicon.
10. The back contact solar cell of any one of claims 1 to 5, further comprising: the first electrode is positioned on the transparent conductive layer, and the first transmission layer is positioned at a position corresponding to the first electrode; the second electrode is positioned on the transparent conductive layer, and the second transmission layer is positioned at a corresponding position;
the back contact solar cell further comprises: the front passivation layer and the front antireflection layer are sequentially laminated on the second side of the silicon substrate; the first side and the second side are relatively distributed.
11. A method of manufacturing a back contact solar cell according to any one of claims 1 to 10, comprising:
providing a conductive substrate; the conductive substrate includes: the silicon substrate is respectively positioned on the first transmission layer, the second transmission layer, the barrier layer and the transparent conductive layer on the first side of the silicon substrate; the first transmission layer and the second transmission layer are alternately arranged on the silicon substrate; the barrier layer is positioned on an end region of the first transmission layer adjacent to the second transmission layer; the second transmission layer also has an island portion overlying the barrier layer; the transparent conductive layer covers the part of the first transmission layer which is not covered by the barrier layer and covers the second transmission layer;
and forming an insulating opening on the transparent conductive layer by adopting laser.
12. The method of claim 11, wherein the laser has at least one of 355nm, 532nm, 1064 nm;
and/or the pulse width of the laser is 50ps to 100ns;
and/or the energy of the laser is 0.1w to 50w.
13. A photovoltaic module, comprising: a number of back contact solar cells as claimed in any one of claims 1 to 10.
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