CN117555072A - 3dB adiabatic mode coupler - Google Patents
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- CN117555072A CN117555072A CN202311738210.6A CN202311738210A CN117555072A CN 117555072 A CN117555072 A CN 117555072A CN 202311738210 A CN202311738210 A CN 202311738210A CN 117555072 A CN117555072 A CN 117555072A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000005253 cladding Methods 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 230000010354 integration Effects 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 241000529895 Stercorarius Species 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12147—Coupler
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12154—Power divider
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention belongs to the technical field of integrated photoelectrons, and particularly relates to a 3dB adiabatic mode coupler. The invention comprises a cladding layer, a first silicon core and a second silicon core; cladding layers are arranged around the first silicon core and the second silicon core; along the light beam propagation direction, the first silicon core comprises a first input end, a first adiabatic taper waveguide, a second adiabatic taper waveguide, a third adiabatic taper waveguide, a fourth adiabatic taper waveguide, a fifth adiabatic taper waveguide, a sixth adiabatic taper waveguide, a seventh adiabatic taper waveguide, an eighth adiabatic taper waveguide and a first output end which are sequentially connected; the second silicon core comprises a second input end, a ninth adiabatic taper waveguide, a tenth adiabatic taper waveguide, an eleventh adiabatic taper waveguide, a twelfth adiabatic taper waveguide, a thirteenth adiabatic taper waveguide, a fourteenth adiabatic taper waveguide, a fifteenth adiabatic taper waveguide, a sixteenth adiabatic taper waveguide and a second output end which are sequentially connected. The invention realizes the design target of higher integration level in the photon integrated chip.
Description
Technical Field
The invention belongs to the technical field of integrated photoelectrons, and particularly relates to a 3dB adiabatic mode coupler.
Background
The photon integrated chip is a core element of a modern optical communication device, and a plurality of photon chips can be integrated on one chip, so that integration and cooperation of multiple functions are realized. In future large-scale photonic integrated chips, silicon-on-Insulator (SOI) platforms using high refractive index contrast silicon photonic optical power couplers are ideal candidates for large-scale photonic integration in optical communications, as embodied in paper K.Solehmainen, M.Kapulainen, M.Harjanne, andT.Aalto, "Adiabatic and Multimode Interference Couplers on Silicon-on-Insulator," IEEE photon technology letters, vol.18, no.21, pp.2287-2289, nov.2006.
Among the various types of SOI power couplers, 2 x 2adiabatic 3dB couplers are preferred in photonic integrated chips, which have been used to fabricate thermo-optic switches and Mach-zehnder interferometer (Mach-Zehnder Interferometer, MZI) electro-optic modulators due to their wide operating bandwidth (wavelength), small manufacturing tolerances, and low losses, as embodied in paper H.Yun, Y.Wang, F.Zhang, Z.Lu, S.Lin, L.Chrostowski, and n.a.f. jaeger, "Broadband 2 x 2adiabatic 3dB coupler using silicon-on-insulator sub-wavelength grating waveguides," opt.lett., vol.41, no.13, pp.3041-3044, july 2016. Most of the current 2×2adiabatic 3dB couplers are connected in a linear manner, and a very large device size is required, which is contrary to the miniaturization design of devices in the direction of higher integration in photonic integrated chips.
Disclosure of Invention
The invention aims to provide a 3dB adiabatic mode coupler, which aims to design a 3dB adiabatic mode coupler with small size, low loss, high transmission efficiency and simple structure.
In order to achieve the aim of the invention, the technical scheme adopted by the invention is as follows:
a3 dB adiabatic mode coupler comprises a cladding, a first silicon core and a second silicon core; cladding layers are arranged around the first silicon core and the second silicon core; the first silicon core comprises a first input end, a first adiabatic taper waveguide, a second adiabatic taper waveguide, a third adiabatic taper waveguide, a fourth adiabatic taper waveguide, a fifth adiabatic taper waveguide, a sixth adiabatic taper waveguide, a seventh adiabatic taper waveguide, an eighth adiabatic taper waveguide and a first output end which are sequentially connected along the propagation direction of the light beam; the second silicon core comprises a second input end, a ninth adiabatic taper waveguide, a tenth adiabatic taper waveguide, an eleventh adiabatic taper waveguide, a twelfth adiabatic taper waveguide, a thirteenth adiabatic taper waveguide, a fourteenth adiabatic taper waveguide, a fifteenth adiabatic taper waveguide, a sixteenth adiabatic taper waveguide and a second output end which are sequentially connected.
Further as a preferable technical scheme of the invention, the material of the cladding is SiO 2 Refractive index n SiO2 =1.445, width W 0 Thickness is h 0 The method comprises the steps of carrying out a first treatment on the surface of the Refractive index n of first silicon core and second silicon core Si 3.455, thickness h=220 nm; the gap width between the first silicon core and the second silicon core is set to g=150 nm; the wavelength of the incident beam is 1.55 mu m; the width of the first input end is W I =560 nm; the width of the second input end is w I =380 nm; the width of the first output end is W O =470 nm; the width of the second output end is w O =470 nm; the width of the cladding should be such that: w (W) 0 >W I +g+w I The height should satisfy: h is a 0 >h, performing H; the first input end and the first output end are parallel plate waveguides with widths W respectively I =560 nm and W O =470 nm; the second input end and the second output end are parallel plate waveguides with the widths of w respectively I =380 nm and w O ＝470nm。
Further as a preferable technical scheme of the invention, the initial end waveguide width and the tail end width of the first heat insulation tapered waveguide are respectively W 1 =560 nm and W 2 =510 nm; the initial end waveguide width and the tail end width of the ninth adiabatic taper waveguide are respectively w 1 =380 nm and w 2 =430 nm; length L 1 ＝4728nm。
Further as a preferable embodiment of the invention, the initial end waveguide width and the terminal end width of the second adiabatic taper waveguideRespectively W 2 =510 nm and W 2 =496 nm; the width of the initial end waveguide and the width of the tail end of the tenth adiabatic taper waveguide are respectively w 2 =430 nm and w 2 =444 nm; length L 2 ＝7366nm。
Further as a preferable technical scheme of the invention, the initial end waveguide width and the tail end width of the third adiabatic taper waveguide are respectively W 3 =496 nm and W 4 =490 nm; the initial end waveguide width and the tail end width of the eleventh adiabatic taper waveguide are respectively w 3 =444 nm and w 4 =450 nm; length L 3 ＝7882nm。
Further as a preferable technical scheme of the invention, the initial end waveguide width and the tail end width of the fourth adiabatic taper waveguide are respectively W 4 =490 nm and W 5 =485 nm; the initial end waveguide width and the tail end width of the twelfth adiabatic taper waveguide are respectively w 4 =450 nm and w 5 =455 nm; length L 4 ＝12128nm。
Further as a preferable technical scheme of the invention, the initial end waveguide width and the tail end width of the fifth adiabatic taper waveguide are respectively W 5 =485 nm and W 6 =480 nm; the thirteenth adiabatic taper waveguide has an initial end waveguide width and a final end width of w 5 =455 nm and w 6 =460 nm; length L 5 ＝18194nm。
Further as a preferable technical scheme of the invention, the initial end waveguide width and the tail end width of the sixth adiabatic taper waveguide are respectively W 6 =480 nm and W 7 =476 nm; the initial end waveguide width and the tail end width of the fourteenth adiabatic taper waveguide are respectively w 6 =460 nm and w 7 =464 nm; length L 6 ＝23448nm。
Further as a preferable technical scheme of the invention, the initial end waveguide width and the tail end width of the seventh adiabatic taper waveguide are respectively W 7 =476 nm and W 8 =472 nm; the initial end waveguide width and the tail end width of the fifteenth adiabatic taper waveguide are respectively w 7 =464 nm and w 8 ＝468nmThe method comprises the steps of carrying out a first treatment on the surface of the Length L 7 ＝28918nm。
Further as a preferable technical scheme of the invention, the initial end waveguide width and the tail end width of the eighth adiabatic taper waveguide are respectively W 8 =472 nm and W 9 =470 nm; the sixteenth adiabatic taper waveguide has an initial end waveguide width and a final end width of w 8 =468 nm and w 9 =470 nm; length L 8 ＝24911nm。
Compared with the prior art, the 3dB adiabatic mode coupler has the following technical effects:
(1) The 3dB adiabatic mode coupler can realize that only one supermode in two asymmetric waveguides is excited to be the lowest-order even mode or the lowest-order odd mode by the input end, and is coupled to the same-order supermode in the two symmetric waveguides by the output end, so that uniform power distribution is realized in a wider working bandwidth; the 3dB adiabatic mode coupler can also operate in reverse, in which case all the energy stays in the excited supermode, and neither mode disturbance nor mode conversion occurs as light propagates in the coupler.
(2) The present invention is far better in efficiency than conventional straight line connection designs. When 96% transmission efficiency is to be achieved, the invention only needs 18 μm in length, while the traditional straight line connection design needs 117 μm in length, which is 6.5 times of the length required by the invention, the invention greatly reduces the device size of the 3dB adiabatic mode coupler, and can achieve miniaturized design in a photon integrated chip.
Drawings
FIG. 1 is a cross section of the input end of a 3dB adiabatic mode coupler in an embodiment of the present invention;
FIG. 2 is an output cross section of a 3dB adiabatic mode coupler in an embodiment of the present invention;
FIG. 3 is a schematic diagram of the connection of a first silicon core and a second silicon core of a 3dB adiabatic mode coupler in an embodiment of the present invention;
FIG. 4 is a graph comparing the mode transmission efficiency curves of the present invention and a conventional straight line connection design;
wherein, the reference numerals are as follows: 1. a cladding layer; 2. a first silicon core; 3. a second silicon core; 4-1, a first input; 5-1, a first thermally insulated tapered waveguide; 6-1, a second adiabatic tapered waveguide; 7-1, a third adiabatic tapered waveguide; 8-1, a fourth adiabatic tapered waveguide; 9-1, a fifth adiabatic tapered waveguide; 10-1, a sixth adiabatic tapered waveguide; 11-1, a seventh adiabatic tapered waveguide; 12-1, eighth adiabatic tapered waveguide; 13-1, a first output; 4-2, a second input terminal; 5-2, a ninth adiabatic tapered waveguide; 6-2, a tenth adiabatic tapered waveguide; 7-2, an eleventh adiabatic tapered waveguide; 8-2, a twelfth adiabatic tapered waveguide; 9-2, thirteenth adiabatic tapered waveguide; 10-2, a fourteenth adiabatic tapered waveguide; 11-2, a fifteenth adiabatic tapered waveguide; 12-2, a sixteenth adiabatic tapered waveguide; 13-2, a second output.
Detailed Description
The invention is further explained in the following detailed description with reference to the drawings so that those skilled in the art can more fully understand the invention and can practice it, but the invention is explained below by way of example only and not by way of limitation.
As shown in fig. 1-3, a 3dB adiabatic mode coupler includes a cladding 1, a first silicon core 2, and a second silicon core 3; cladding layers 1 are arranged around the first silicon core 2 and the second silicon core 3; along the propagation direction of the light beam, the first silicon core 2 comprises a first input end 4-1, a first adiabatic taper waveguide 5-1, a second adiabatic taper waveguide 6-1, a third adiabatic taper waveguide 7-1, a fourth adiabatic taper waveguide 8-1, a fifth adiabatic taper waveguide 9-1, a sixth adiabatic taper waveguide 10-1, a seventh adiabatic taper waveguide 11-1, an eighth adiabatic taper waveguide 12-1 and a first output end 13-1 which are sequentially connected; the second silicon core 3 includes a second input terminal 4-2, a ninth adiabatic taper waveguide 5-2, a tenth adiabatic taper waveguide 6-2, an eleventh adiabatic taper waveguide 7-2, a twelfth adiabatic taper waveguide 8-2, a thirteenth adiabatic taper waveguide 9-2, a fourteenth adiabatic taper waveguide 10-2, a fifteenth adiabatic taper waveguide 11-2, a sixteenth adiabatic taper waveguide 12-2, and a second output terminal 13-2, which are sequentially connected.
The material of the cladding 1 is SiO 2 Refractive index n SiO2 ＝1.445，Width W 0 Thickness is h 0 The method comprises the steps of carrying out a first treatment on the surface of the Refractive index n of first silicon core 2 and second silicon core 3 Si 3.455, thickness h=220 nm; the gap width between the first silicon core 2 and the second silicon core 3 is set to g=150 nm; the wavelength of the incident beam is 1.55 mu m; the first input end 4-1 has a width W I =560 nm; the width of the second input end 4-2 is w I =380 nm; the first output end 13-1 has a width W O =470 nm; the width of the second output end 13-2 is w O =470 nm; the width of the cladding 1 should be such that: w (W) 0 >W I +g+w I The height should satisfy: h is a 0 >h, performing H; are respectively set as W in the embodiment of the invention 0 =3000 nm and h 0 ＝1250nm。
The first input end 4-1 and the first output end 13-1 are parallel plate waveguides with widths W respectively I =560 nm and W O =470 nm; the second input end 4-2 and the second output end 13-2 are parallel plate waveguides with widths w I =380 nm and w O =470 nm. Length L I And L O Has no influence on the overall structure, and is selected to be 5000nm in the embodiment of the present invention.
The initial end waveguide width and the final end width of the first adiabatic taper waveguide 5-1 are W respectively 1 =560 nm and W 2 =510 nm; the ninth adiabatic tapered waveguide 5-2 has an initial end waveguide width and a terminal end width of w, respectively 1 =380 nm and w 2 =430 nm; length L 1 ＝4728nm。
The initial end waveguide width and the final end width of the second adiabatic taper waveguide 6-1 are W respectively 2 =510 nm and W 2 =496 nm; the tenth adiabatic taper waveguide 6-2 has an initial end waveguide width and a terminal end width of w, respectively 2 =430 nm and w 2 =444 nm; length L 2 ＝7366nm。
The initial end waveguide width and the final end width of the third adiabatic taper waveguide 7-1 are W respectively 3 =496 nm and W 4 =490 nm; the eleventh adiabatic tapered waveguide 7-2 has an initial end waveguide width and a terminal end width of w, respectively 3 =444 nm and w 4 =450 nm; length L 3 ＝7882nm。
The initial end waveguide width and the final end width of the fourth adiabatic taper waveguide 8-1 are W respectively 4 =490 nm and W 5 =485 nm; the twelfth adiabatic tapered waveguide 8-2 has an initial end waveguide width and a terminal end width of w, respectively 4 =450 nm and w 5 =455 nm; length L 4 ＝12128nm。
The fifth adiabatic taper waveguide 9-1 has an initial end waveguide width and a terminal end width of W, respectively 5 =485 nm and W 6 =480 nm; the thirteenth adiabatic tapered waveguide 9-2 has an initial end waveguide width and a terminal end width of w, respectively 5 =455 nm and w 6 =460 nm; length L 5 ＝18194nm。
The sixth adiabatic tapered waveguide 10-1 has an initial end waveguide width and a terminal end width of W, respectively 6 =480 nm and W 7 =476 nm; the fourteenth adiabatic tapered waveguide 10-2 has an initial end waveguide width and a terminal end width of w, respectively 6 =460 nm and w 7 =464 nm; length L 6 ＝23448nm。
The initial end waveguide width and the final end width of the seventh adiabatic taper waveguide 11-1 are W respectively 7 =476 nm and W 8 =472 nm; the fifteenth adiabatic tapered waveguide 11-2 has an initial end waveguide width and a terminal end width of w, respectively 7 =464 nm and w 8 =468 nm; length L 7 ＝28918nm。
The eighth adiabatic tapered waveguide 12-1 has an initial end waveguide width and a terminal end width of W, respectively 8 =472 nm and W 9 =470 nm; the sixteenth adiabatic tapered waveguide 12-2 has an initial end waveguide width and a terminal end width of w, respectively 8 =468 nm and w 9 =470 nm; length L 8 ＝24911nm。
Through the layout, for TE mode or TM mode, in the 3dB adiabatic mode coupler, when the beam mode port I or port II emits, the input end only excites one supermode in the two asymmetric waveguides to be the lowest order even mode or the lowest order odd mode, and the output end is coupled to the same-order supermode in the two symmetric waveguides, so that uniform power distribution is realized in a wider working bandwidth. Conversely, when beam modes are input from port three and port four, the 3dB adiabatic mode coupler can also operate in reverse, in which case all energy stays in the excited supermode, and neither mode disturbance nor mode conversion occurs when light propagates in the coupler.
The transmission efficiency of the 3dB adiabatic mode coupler of the present invention is shown in fig. 4. It can be seen from the figure that the present invention requires only 18 um length when 96% transmission efficiency is to be achieved, whereas the conventional straight line connection design requires 117 um length, which is 6.5 times the length required by the present invention. Therefore, the 3dB adiabatic mode coupler provided by the invention realizes the design of an ultra-compact device, can be used for cascading different functional units in a photonic integrated chip, and realizes the design target of higher integration level in the photonic integrated chip.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (10)
1. A 3dB adiabatic mode coupler, comprising a cladding (1), a first silicon core (2) and a second silicon core (3); cladding layers (1) are arranged around the first silicon core (2) and the second silicon core (3); along the light beam propagation direction, the first silicon core (2) comprises a first input end (4-1), a first adiabatic taper waveguide (5-1), a second adiabatic taper waveguide (6-1), a third adiabatic taper waveguide (7-1), a fourth adiabatic taper waveguide (8-1), a fifth adiabatic taper waveguide (9-1), a sixth adiabatic taper waveguide (10-1), a seventh adiabatic taper waveguide (11-1), an eighth adiabatic taper waveguide (12-1) and a first output end (13-1) which are connected in sequence; the second silicon core (3) comprises a second input end (4-2), a ninth adiabatic taper waveguide (5-2), a tenth adiabatic taper waveguide (6-2), an eleventh adiabatic taper waveguide (7-2), a twelfth adiabatic taper waveguide (8-2), a thirteenth adiabatic taper waveguide (9-2), a fourteenth adiabatic taper waveguide (10-2), a fifteenth adiabatic taper waveguide (11-2), a sixteenth adiabatic taper waveguide (12-2) and a second output end (13-2) which are sequentially connected.
2. A 3dB adiabatic mode coupler as claimed in claim 1, characterized in that the material of the cladding (1) is SiO 2 Refractive index n SiO2 =1.445, width W 0 Thickness is h 0 The method comprises the steps of carrying out a first treatment on the surface of the Refractive index n of the first silicon core (2) and the second silicon core (3) Si 3.455, thickness h=220 nm; the gap width between the first silicon core (2) and the second silicon core (3) is set to g=150 nm; the wavelength of the incident beam is 1.55 mu m; the width of the first input end (4-1) is W I =560 nm; the width of the second input end (4-2) is w I =380 nm; the width of the first output end (13-1) is W O =470 nm; the width of the second output end (13-2) is w O =470 nm; the width of the cladding (1) should be such that: w (W) 0 >W I +g+w I The height should satisfy: h is a 0 >h, performing H; the first input end (4-1) and the first output end (13-1) are parallel plate waveguides with the widths of W respectively I =560 nm and W O =470 nm; the second input end (4-2) and the second output end (13-2) are parallel plate waveguides with the widths of w respectively I =380 nm and w O ＝470nm。
3. A 3dB adiabatic mode coupler as claimed in claim 1, characterized in that the initial end waveguide width and the terminal end width of the first adiabatic tapered waveguide (5-1) are W, respectively 1 =560 nm and W 2 =510 nm; the initial end waveguide width and the tail end width of the ninth adiabatic taper waveguide (5-2) are respectively w 1 =380 nm and w 2 =430 nm; length L 1 ＝4728nm。
4. A 3dB adiabatic mode coupler as claimed in claim 1, characterized in that the initial end waveguide width and the terminal end width of the second adiabatic tapered waveguide (6-1) are W, respectively 2 =510 nm and W 2 =496 nm; the initial end of the tenth adiabatic tapered waveguide (6-2)The waveguide width and the end width are w 2 =430 nm and w 2 =444 nm; length L 2 ＝7366nm。
5. A 3dB adiabatic mode coupler as claimed in claim 1, characterized in that the third adiabatic tapered waveguide (7-1) has an initial end waveguide width and an end width of W, respectively 3 =496 nm and W 4 =490 nm; the initial end waveguide width and the tail end width of the eleventh adiabatic taper waveguide (7-2) are respectively w 3 =444 nm and w 4 =450 nm; length L 3 ＝7882nm。
6. A 3dB adiabatic mode coupler as claimed in claim 1, characterized in that the fourth adiabatic tapered waveguide (8-1) has an initial end waveguide width and an end width of W, respectively 4 =490 nm and W 5 =485 nm; the initial end waveguide width and the tail end width of the twelfth adiabatic taper waveguide (8-2) are respectively w 4 =450 nm and w 5 =455 nm; length L 4 ＝12128nm。
7. A 3dB adiabatic mode coupler as claimed in claim 1, characterized in that the initial end waveguide width and the terminal end width of the fifth adiabatic tapered waveguide (9-1) are W, respectively 5 =485 nm and W 6 =480 nm; the thirteenth adiabatic taper waveguide (9-2) has an initial end waveguide width and a terminal end width of w, respectively 5 =455 nm and w 6 =460 nm; length L 5 ＝18194nm。
8. A 3dB adiabatic mode coupler as claimed in claim 1, characterized in that the initial end waveguide width and the terminal end width of the sixth adiabatic tapered waveguide (10-1) are W, respectively 6 =480 nm and W 7 =476 nm; the initial end waveguide width and the tail end width of the fourteenth adiabatic taper waveguide (10-2) are respectively w 6 =460 nm and w 7 =464 nm; length L 6 ＝23448nm。
9. A 3dB adiabatic mode coupler as claimed in claim 1, characterized in that the initial end waveguide width and the terminal end width of the seventh adiabatic tapered waveguide (11-1) are W, respectively 7 =476 nm and W 8 =472 nm; the fifteenth adiabatic tapered waveguide (11-2) has an initial end waveguide width and a terminal end width of w, respectively 7 =464 nm and w 8 =468 nm; length L 7 ＝28918nm。
10. A 3dB adiabatic mode coupler as claimed in claim 1, characterized in that the eighth adiabatic tapered waveguide (12-1) has an initial end waveguide width and a terminal end width of W, respectively 8 =472 nm and W 9 =470 nm; the sixteenth adiabatic taper waveguide (12-2) has an initial end waveguide width and a terminal end width of w, respectively 8 =468 nm and w 9 =470 nm; length L 8 ＝24911nm。
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