CN115951451A - Is suitable for TM 1 And TE 2 Adiabatic mode converter for mode conversion - Google Patents
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Abstract
The invention discloses a method suitable for TM 1 And TE 2 An adiabatic mode converter for mode conversion, comprising a silicon core and a cladding; the silicon core is a ridge waveguide structure and consists of a bottom silicon core and a top silicon core; the width of the bottom silicon core is kept unchanged along the propagation direction of the light beam; the input end and the output end of the top silicon core are parallel plate waveguides respectively, and the width W of the input end L <1.80 μm, width W of output end R >2.0 μm; along the propagation direction of the light beam, the top silicon core between the input end and the output end consists of 11 continuous segments from segment a to segment k; the adiabatic mode converter of the present invention selects the length of each segment based on the balanced mode conversion power loss along the mode propagation direction, and by such an arrangement, an efficient and compact adiabatic mode converter is achieved.
Description
Technical Field
The present invention relates to an adiabatic mode converter.
Background
Silicon waveguides based on silicon-on-insulator structures have attracted considerable attention because of their advantages in terms of low cost, compact footprint, and compatibility with complementary metal oxide semiconductor processing techniques. Nanoscale silicon waveguides are important for their potential use in photonic integrated circuits. The heat insulation device is an essential component of the photonic integrated chip. In addition to waveguide losses, substrate losses, optical confinement and space occupation, the polarization problem must be dealt with in designing the thermal isolation device. In a vertically asymmetric waveguide, mode mixing can be used to transition between TM and TE higher order modes in a ridge waveguide.
Adiabatic mode converters are very important for integrated optical applications because they have a wide bandwidth and high tolerance to manufacturing variations. Furthermore, adiabatic mode converters are a key element in polarization diversity circuits for achieving a single polarization state in photonic integrated chips. Adiabatic mode converters are used to perform mode conversion, such as conversion between TE and TM modes, between two waveguides having different cross sections. In optical waveguides with high index contrast, mode mixing is important for certain specific waveguide widths. Thus, mode conversion may occur in the ridge waveguide. Thus, the use of adiabatic mode transducers requires that a particular TM be tuned by changing the wave guiding structure from input to output 1 Mode evolution to TE 2 Mode, or TE 2 Mode evolution to TM 1 Mode(s). In adiabatic mode converter design, adiabatic mode conversion can be achieved by slowly increasing/decreasing the size of the device cross section. Furthermore, when the change is slow enough, the mode transition in an adiabatic mode converter can be considered lossless, but requires a long length.
In designing TM 1 And TE 2 When switching between modes, both modes are particularly sensitive to variations in device geometry, and designing adiabatic mode converters is therefore very complex and difficult. The existing design methods are all that directly and linearly connect the input end and the output end, that is, simply and linearly change the waveguide structure to obtain the required device length under the specific mode conversion efficiency, but the device length obtained by the method can obviously exceed the required length.
Disclosure of Invention
The purpose of the invention is as follows: in view of the above prior art, a compact adiabatic modal converter is proposed to implement TM 1 And TE 2 Mode transitions between modes.
The technical scheme is as follows: is suitable for TM 1 And TE 2 The adiabatic mode converter for mode conversion comprises a silicon core and a cladding 3; the silicon core is a ridge waveguide structure and consists of a bottom silicon core 1 and a topA silicon core 2; the width of the bottom silicon core 1 is kept unchanged along the propagation direction of the light beam; the input end and the output end of the top silicon core 2 are parallel plate waveguides respectively, and the width W of the input end L <1.80 μm, width W of output end R >2.0 μm, the top silicon core 2 between the input end and the output end along the propagation direction of the light beam is composed of 11 continuous segments from segment a to segment k, the segment a is connected by a straight line with width W L And W 1 =1.75 μm, length L a =28.116 μm; the segments b being connected by a straight line having a width W 1 =1.75 μm and W 2 =1.80 μm and a length L b =38.928 μm; the segments c being connected by a straight line having a width W 2 =1.80 μm and W 3 =1.84 μm and length L c =59.460 μm; the segments d being connected by a straight line having a width W 3 =1.84 μm and W 4 =1.86 μm and a length L d =33.788 μm; the segments e being connected by a straight line of width W 4 =1.86 μm and W 5 =1.88 μm and length L e =53.236 μm; the segments f being connected by a straight line having a width W 5 =1.88 μm and W 6 =1.90 μm and a length L f =58.568 μm; the segments g being connected by a straight line of width W 6 =1.90 μm and W 7 =1.92 μm and a length L g =56.312 μm; the segments h being connected by a straight line having a width W 7 =1.92 μm and W 8 =1.96 μm and length L h =81.220 μm; the segments i being connected by a straight line having a width W 8 =1.96 μm and W 9 = 2.00. Mu.m, length L i =54.136 μm; segment j is connected by a straight line of width W 9 =2.00 μm and W 10 =2.05 μm and a length L j =33.068 μm; the segments k being connected by a straight line having a width W 10 =2.05 μm and W R Length of L k ＝28.344μm。
Has the advantages that: the adiabatic mode converter of the present invention selects the length of each segment based on the balanced mode conversion power loss along the mode propagation direction, and by such an arrangement, an efficient and compact adiabatic mode converter is achieved. Comparing the design of the present invention with the design of the straight line connection case as shown in fig. 2, the mode conversion efficiency of both cases is shown in fig. 6. It can be seen from the figure that the design of the present invention is much better in efficiency than the straight line connection. For example, when a 96% transmission efficiency is to be achieved, the design of the present invention requires only 82 μm in length, whereas the straight line connection case requires 230 μm in length. Therefore, when 96% power transfer is required, the length required for the straight case is 2.8 times the length required for the inventive design, i.e., the invention greatly reduces the size of the adiabatic mode converter, enabling a compact design in a photonic integrated chip.
Drawings
FIG. 1 is a schematic cross-sectional view of an adiabatic mode converter according to the present invention;
FIG. 2 is a schematic top view of a top silicon core with a straight line connection in a conventional structure;
FIG. 3 is the TM at the input of the adiabatic mode converter 1 A pattern diagram;
FIG. 4 shows TE at the output of the adiabatic mode converter 2 A pattern diagram;
FIG. 5 is a schematic top view of a top silicon core of an adiabatic mode converter according to the present invention;
fig. 6 is a graph comparing a mode conversion efficiency curve with a straight line connection condition of the adiabatic mode converter of the present invention.
Detailed Description
The invention is further explained below with reference to the drawings.
As shown in fig. 1, a method suitable for TM 1 And TE 2 An adiabatic mode converter for mode conversion includes a silicon core and a cladding 3. Refractive index n of silicon core Si =3.455, the silicon core is a ridge waveguide structure, and is composed of a bottom silicon core 1 and a top silicon core 2. Thickness h of bottom silicon core 1 2 =220nm, width of the bottom silicon core 1 along the direction of beam propagation, w 0 The change is not changed; thickness h of the top silicon core 2 3 =280nm. The material of the cladding 3 is silica with a refractive index n SiO2 =1.445, thickness h 1 >(h 2 +h 3 ) Width W 0 >w 0 . The incident beam wavelength was set at 1550nm.
In the conventional structure, the linear connection mode of the top silicon core 2 with the width varying is shown in fig. 2. The left end a is an adiabatic modeThe input of the converter and the right end c is the output of the adiabatic mode converter. The device length obtained by the straight line connection mode can obviously exceed the required length, so the invention aims to design an efficient and compact geometric structure to realize the conversion between different modes. FIG. 3 is a TM at the input of an adiabatic mode converter 1 Mode, FIG. 4 TE of output terminal 2 Mode(s).
As shown in FIG. 5, in this embodiment, the input end and the output end of the top silicon core 2 are parallel plate waveguides, respectively, and the width W of the input end L =1.65 μm, width W of output terminal R And =2.15 μm, the top silicon core 2 between the input end and the output end is composed of 11 continuous segments a to k along the propagation direction of the light beam, and the width W and length of each segment are designed as follows: the segments a are connected by a straight line having a width W L =1.65 μm and W 1 =1.75 μm, length L a =28.116 μm; the segments b being connected by a straight line having a width W 1 =1.75 μm and W 2 =1.80 μm and a length L b =38.928 μm; the segments c being connected by a straight line having a width W 2 =1.80 μm and W 3 =1.84 μm and a length L c =59.460 μm; the segments d being connected by a straight line having a width W 3 =1.84 μm and W 4 =1.86 μm and a length L d =33.788 μm; the segments e being connected by a straight line having a width W 4 =1.86 μm and W 5 =1.88 μm and length L e =53.236 μm; the segments f being connected by a straight line having a width W 5 =1.88 μm and W 6 =1.90 μm and a length L f =58.568 μm; the segments g being connected by a straight line of width W 6 =1.90 μm and W 7 =1.92 μm and a length L g =56.312 μm; the segments h being connected by a straight line having a width W 7 =1.92 μm and W 8 =1.96 μm and length L h =81.220 μm; the segments i being connected by a straight line having a width W 8 =1.96 μm and W 9 = 2.00. Mu.m, length L i =54.136 μm; segment j is connected by a straight line of width W 9 =2.00 μm and W 10 =2.05 μm and a length L j =33.068 μm; the segments k being connected by a straight line having a width W 10 =2.05 μm and W R =2.15 μm and a length L k =28.344 μm. Adiabatic mode of the inventionThe length of the converter is selected based on the balanced mode conversion power loss along the mode propagation direction. Through simulation calculation, the selected lengths of the segments correspond to the same mode conversion power loss. By the above structural arrangement, the adiabatic mode converter proposed by the present invention can achieve very high mode conversion efficiency.
There are also TM at present 0 And TE 1 The design of the conversion between the modes is seemingly the change of geometric parameters, but the physical properties of different modes are completely different, and the physical properties, the required fineness of division and the applied scenes involved in the design of the conversion of different modes are also different, so the design of the invention is suitable for TM 1 And TE 2 Mode-switching adiabatic mode couplers and other means of switching between modes are not merely variations in geometric parameters.
The initial width W of the top silicon core 2 L And a tip width W R Not exclusively, it is necessary to satisfy W L <1.80 μm and W R >2.0 μm. The material of the cladding 3 of the adiabatic mode converter may also be air.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (1)
1. Is suitable for TM 1 And TE 2 An adiabatic mode converter for mode conversion, comprising a silicon core and a cladding (3); the silicon core is of a ridge waveguide structure and consists of a bottom silicon core (1) and a top silicon core (2); the width of the bottom silicon core (1) is kept unchanged along the propagation direction of the light beam; the input end and the output end of the top silicon core (2) are parallel plate waveguides respectively, and the width W of the input end L <1.80 μm, width W of output end R >2.0 mu m, the top silicon core (2) between the input end and the output end along the propagation direction of the light beam is composed of 11 continuous segments from a segment to a segment kThe section a is connected by a straight line with a width W L And W 1 =1.75 μm, length L a =28.116 μm; the segments b being connected by a straight line having a width W 1 =1.75 μm and W 2 =1.80 μm and a length L b =38.928 μm; the segments c being connected by a straight line having a width W 2 =1.80 μm and W 3 =1.84 μm and a length L c =59.460 μm; the segments d being connected by a straight line having a width W 3 =1.84 μm and W 4 =1.86 μm and a length L d =33.788 μm; the segments e being connected by a straight line having a width W 4 =1.86 μm and W 5 =1.88 μm and length L e =53.236 μm; the segments f being connected by a straight line having a width W 5 =1.88 μm and W 6 =1.90 μm and a length L f =58.568 μm; the segments g being connected by a straight line having a width W 6 =1.90 μm and W 7 =1.92 μm and a length L g =56.312 μm; the segments h being connected by a straight line having a width W 7 =1.92 μm and W 8 =1.96 μm and a length L h =81.220 μm; the segments i being connected by a straight line having a width W 8 =1.96 μm and W 9 = 2.00. Mu.m, length L i =54.136 μm; segment j is connected by a straight line of width W 9 =2.00 μm and W 10 =2.05 μm and a length L j =33.068 μm; the segments k being connected by a straight line having a width W 10 =2.05 μm and W R Length of L k ＝28.344μm。
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Cited By (5)
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| CN116794768A (en) * | 2023-07-05 | 2023-09-22 | 南通大学 | Adiabatic mode coupler |
| CN117075257A (en) * | 2023-09-05 | 2023-11-17 | 南通大学 | TE (TE) 0 Mode and TE 1 Mode power equalizer |
| CN117092748A (en) * | 2023-09-19 | 2023-11-21 | 南通大学 | Compact adiabatic mode evolution ware |
| CN117130098A (en) * | 2023-08-08 | 2023-11-28 | 南通大学 | Compact adiabatic optical isolator |
| CN117826323A (en) * | 2024-01-29 | 2024-04-05 | 南通大学 | Double-layer heat insulation mode converter |
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Cited By (5)
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| CN116794768A (en) * | 2023-07-05 | 2023-09-22 | 南通大学 | Adiabatic mode coupler |
| CN117130098A (en) * | 2023-08-08 | 2023-11-28 | 南通大学 | Compact adiabatic optical isolator |
| CN117075257A (en) * | 2023-09-05 | 2023-11-17 | 南通大学 | TE (TE) 0 Mode and TE 1 Mode power equalizer |
| CN117092748A (en) * | 2023-09-19 | 2023-11-21 | 南通大学 | Compact adiabatic mode evolution ware |
| CN117826323A (en) * | 2024-01-29 | 2024-04-05 | 南通大学 | Double-layer heat insulation mode converter |
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