CN116482806B - Be applicable to TM 0 And TE (TE) 3 Adiabatic mode converter for mode conversion - Google Patents
Be applicable to TM 0 And TE (TE) 3 Adiabatic mode converter for mode conversion Download PDFInfo
- Publication number
- CN116482806B CN116482806B CN202211347461.7A CN202211347461A CN116482806B CN 116482806 B CN116482806 B CN 116482806B CN 202211347461 A CN202211347461 A CN 202211347461A CN 116482806 B CN116482806 B CN 116482806B
- Authority
- CN
- China
- Prior art keywords
- segment
- length
- straight line
- width
- silicon core
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000005253 cladding Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12152—Mode converter
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a method suitable for TM 0 And TE (TE) 3 An adiabatic mode converter for mode conversion, comprising a silicon core and a cladding; the silicon core is of a ridge waveguide structure and consists of a bottom silicon core and a top silicon core; the width of the bottom silicon core is kept unchanged along the propagation direction of the light beam; the input end and the output end of the top silicon core are parallel plate waveguides respectively, and the width of the input end is 1.60 mu m<W L <Width W of output end 3.27 μm R >3.60 μm; along the beam propagation direction, the top silicon core between the input end and the output end consists of 25 continuous segments from segment a to segment y; the adiabatic mode converter of the present invention selects the length of each segment based on the equilibrium mode conversion power loss in the mode propagation direction, and by such an arrangement, an efficient and compact adiabatic mode converter is realized.
Description
Technical Field
The present invention relates to an adiabatic mode converter.
Background
Silicon waveguides based on silicon-on-insulator structures have attracted considerable attention due to their advantages in terms of low cost, compact footprint and compatibility with complementary metal oxide semiconductor processing techniques. Nanoscale silicon waveguides are important for their potential use in photonic integrated circuits. Adiabatic devices are an essential component of photonic integrated chips. In addition to waveguide loss, substrate loss, optical confinement and space occupation, polarization issues must be addressed when designing adiabatic devices. In a vertically asymmetric waveguide, mode mixing can be used for switching between TM mode and TE higher order modes in a ridge waveguide.
Adiabatic mode converters are very important for integrated optical applications because they have a wide bandwidth and high tolerance to manufacturing variations. Furthermore, adiabatic mode converters are key elements in polarization diversity circuits for achieving a unipolar state in a photonic integrated chip. Adiabatic mode converters are used to perform mode conversion between two waveguides having different cross sections. In optical waveguides with high refractive index contrast, mode mixing is important for certain specific waveguide widths. Thus, mode conversion may occur in the ridge waveguide. Thus, the use of adiabatic mode converters requires that a particular TM be realized by changing the guided wave structure from input to output 0 Mode evolution to TE 3 Mode, or TE 3 Mode evolution to TM 0 A mode. In adiabatic mode converter design, the device cross-section can be increased/decreased slowlySized to effect adiabatic mode switching. Furthermore, when the change is slow enough, the mode conversion in the adiabatic mode converter may be considered lossless.
Due to TM 0 Mode and TE 3 The transition between modes is complex and is designed to be suitable for TM 0 And TE (TE) 3 In the case of adiabatic mode converters for mode conversion, although the waveguide structure can be simply changed linearly to obtain the required device length for a particular mode conversion efficiency, the device length obtained in this way can be far beyond that required.
Disclosure of Invention
The invention aims to: aiming at the prior art, an ultra-compact adiabatic mode converter is provided for realizing TM 0 And TE (TE) 3 Mode transition between modes.
The technical scheme is as follows: be applicable to TM 0 And TE (TE) 3 An adiabatic mode converter for mode conversion, comprising a silicon core and a cladding; the silicon core is of a ridge waveguide structure and consists of a bottom silicon core and a top silicon core; the width of the bottom silicon core is kept unchanged along the propagation direction of the light beam; the input end and the output end of the top silicon core are parallel plate waveguides respectively, and the width of the input end is 1.60 mu m<W L <Width W of output end 3.27 μm R >3.60 μm, the top silicon core between the input and output ends is composed of 25 consecutive segments a-y along the beam propagation direction, segment a is composed of a straight line connecting width W L And W is 1 Length l=3.20 μm a =67.54 μm; segment b is joined by a straight line of width W 1 =3.20 μm and W 2 =3.25 μm, length L b = 143.112 μm; segment c is joined by a straight line of width W 2 =3.25 μm and W 3 =3.27 μm, length L c = 197.048 μm; segment d is connected by a straight line with width W 3 =3.27 μm and W 4 = 3.285 μm length L d = 337.45 μm; segment e is connected by a straight line with width W 4 = 3.285 μm and W 5 =3.295 μm, length L e = 365.675 μm; segment f is connected by a straight line with width W 5 =3.295 μm and W 6 =3.302 μm, length L f ＝478.26μm；Segment g is joined by a straight line of width W 6 =3.302 μm and W 7 =3.308 μm, length L g = 559.412 μm; segment h is joined by a straight line of width W 7 =3.308 μm and W 8 = 3.312 μm length L h = 607.1 μm; segment i is connected by a straight line with width W 8 = 3.312 μm and W 9 =3.316 μm, length L i = 626.688 μm; segment j is connected by a straight line with width W 9 =3.316 μm and W 10 = 3.320 μm length L j = 635.04 μm; segment k is connected by a straight line with width W 10 = 3.320 μm and W 11 = 3.324 μm length L k = 682.444 μm; segment l is connected by a straight line with width W 11 = 3.324 μm and W 12 =3.327 μm, length L l =588.6 μm; segment m is connected by a straight line with width W 12 =3.327 μm and W 13 = 3.331 μm length L m = 776.35 μm; segment n is connected by a straight line with width W 13 = 3.331 μm and W 14 = 3.336 μm length L c = 553.125 μm; segment o is connected by a straight line with width W 14 = 3.336 μm and W 15 = 3.342 μm length L o = 521.063 μm; segment p is connected by a straight line with width W 15 = 3.342 μm and W 16 =3.350 μm, length L p = 499.225 μm; segment q is joined by a straight line of width W 16 =3.350 μm and W 17 = 3.360 μm length L q = 338.413 μm; segment r is connected by a straight line with width W 17 = 3.360 μm and W 18 = 3.380 μm length L r = 298.487 μm; segment s is connected by a straight line with width W 18 = 3.380 μm and W 19 = 3.420 μm length L s =193.5 μm; segment t is connected by a straight line with width W 19 = 3.420 μm and W 20 =3.500 μm, length L t = 89.595 μm; segment u is connected by a straight line with width W 20 =3.50 μm and W 21 =3.60 μm, length L u = 9.825 μm; segment v is joined by a straight line of width W 21 =3.60 μm and W 22 =3.70 μm, length L v =9.01 μm; segment W is connected by a straight line with width W 22 =3.70 μm and W 23 =3.80 μm, length L w = 9.155 μm; fragmentsx is defined by the straight line connecting width W 23 =3.80 μm and W 24 =3.90 μm, length L x = 9.4375 μm; segment y is connected by a straight line with width W 24 =3.90 μm and W R Length L y ＝9.6513μm。
The beneficial effects are that: the adiabatic mode converter of the present invention selects the length of each segment based on the equilibrium mode conversion power loss in the mode propagation direction, and by such an arrangement, an efficient and compact adiabatic mode converter is realized. Comparing the design of the present invention with the design of the straight line connection case as shown in fig. 2, the mode conversion efficiency of both cases is shown in fig. 7 and 8. It can be seen from the figures that the design of the present invention is far better in efficiency than the case of a straight connection. For example, when 96% transmission efficiency is to be achieved, the design of the present invention requires only 534 μm length, whereas the straight line connection case requires 8420 μm length. Therefore, when 96% of power transmission is required, the length required for the straight line case is 16 times that required for the design of the present invention, i.e., the present invention greatly reduces the size of the adiabatic mode converter, and a compact design in the photonic integrated chip is realized. Such an ultra-compact adiabatic mode converter constitutes a key component of a polarization diversity system, and can be applied to a polarization incoherent integrated photonic circuit in a hybrid structure.
Drawings
FIG. 1 is a schematic cross-sectional view of an adiabatic mode converter of the present invention;
FIG. 2 is a schematic top view of a conventional structure with a straight line connection;
FIG. 3 shows the TM at the input of an adiabatic mode converter 0 A pattern diagram;
FIG. 4 is a TE view of the output of an adiabatic mode converter 3 A pattern diagram;
FIG. 5 is a schematic diagram of the geometry of the top silicon core of the adiabatic mode converter of the present invention;
FIG. 6 is a stretched enlarged view of segment u through segment y in the horizontal direction;
FIG. 7 is a graph of mode conversion efficiency of an adiabatic mode converter of the present invention;
fig. 8 is a graph of mode conversion efficiency of the adiabatic mode converter of the straight line connection type.
Detailed Description
The invention is further explained below with reference to the drawings.
As shown in FIG. 1, one is suitable for use with a TM 0 And TE (TE) 3 An adiabatic mode converter for mode conversion comprises a silicon core and a cladding 3. Refractive index n of silicon core Si = 3.455 the silicon core is a ridge waveguide structure, consisting of a bottom silicon core 1 and a top silicon core 2. Thickness h of bottom silicon core 1 2 Along the beam propagation direction, the width of the bottom silicon core 1 remains w =220 nm 0 Unchanged; thickness h of top silicon core 2 3 =280 nm. The material of the cladding 3 is silicon dioxide, and the refractive index n SiO2 =1.445, thickness h 1 >(h 2 +h 3 ) Width W 0 >w 0 . The incident beam wavelength was set to 1550nm.
In the conventional structure, the linear connection mode of the width change of the top silicon core 2 is shown in fig. 2. The left end a is the input end of the adiabatic mode converter and the right end c is the output end of the adiabatic mode converter. The device length obtained by the straight line connection mode can obviously exceed the required length, so the invention aims to design a high-efficiency and compact geometrical structure to realize TM 0 And TE (TE) 3 Transition between modes. FIG. 3 is a schematic diagram of the TM input to an adiabatic mode converter 0 Mode, FIG. 4 is TE at the output 3 A mode.
In the present embodiment, as shown in fig. 5 and 6, the input end and the output end of the top silicon core 2 are parallel plate waveguides, respectively, and the width W of the input end L Width W of output end =3.00 μm R The top silicon core 2 between the input and output ends, along the beam propagation direction, is composed of 25 consecutive segments, segment a-segment y, each segment having a width W and length designed as follows: segment a is connected by a straight line with width W L =3.00 and W 1 Length l=3.20 μm a =67.54 μm; segment b is joined by a straight line of width W 1 =3.20 μm and W 2 =3.25 μm, length L b = 143.112 μm; segment c is joined by a straight line of width W 2 =3.25 μm sumW 3 =3.27 μm, length L c = 197.048 μm; segment d is connected by a straight line with width W 3 =3.27 μm and W 4 = 3.285 μm length L d = 337.45 μm; segment e is connected by a straight line with width W 4 = 3.285 μm and W 5 =3.295 μm, length L e = 365.675 μm; segment f is connected by a straight line with width W 5 =3.295 μm and W 6 =3.302 μm, length L f = 478.26 μm; segment g is joined by a straight line of width W 6 =3.302 μm and W 7 =3.308 μm, length L g = 559.412 μm; segment h is joined by a straight line of width W 7 =3.308 μm and W 8 = 3.312 μm length L h = 607.1 μm; segment i is connected by a straight line with width W 8 = 3.312 μm and W 9 =3.316 μm, length L i = 626.688 μm; segment j is connected by a straight line with width W 9 =3.316 μm and W 10 = 3.320 μm length L j = 635.04 μm; segment k is connected by a straight line with width W 10 = 3.320 μm and W 11 = 3.324 μm length L k = 682.444 μm; segment l is connected by a straight line with width W 11 = 3.324 μm and W 12 =3.327 μm, length L l =588.6 μm; segment m is connected by a straight line with width W 12 =3.327 μm and W 13 = 3.331 μm length L m = 776.35 μm; segment n is connected by a straight line with width W 13 = 3.331 μm and W 14 = 3.336 μm length L c = 553.125 μm; segment o is connected by a straight line with width W 14 = 3.336 μm and W 15 = 3.342 μm length L o = 521.063 μm; segment p is connected by a straight line with width W 15 = 3.342 μm and W 16 =3.350 μm, length L p = 499.225 μm; segment q is joined by a straight line of width W 16 =3.350 μm and W 17 = 3.360 μm length L q = 338.413 μm; segment r is connected by a straight line with width W 17 = 3.360 μm and W 18 = 3.380 μm length L r = 298.487 μm; segment s is connected by a straight line with width W 18 = 3.380 μm and W 19 = 3.420 μm length L s =193.5 μm; segment t is connected by a straight line with width W 19 = 3.420 μm and W 20 =3.500 μm, length L t = 89.595 μm; segment u is connected by a straight line with width W 20 =3.50 μm and W 21 =3.60 μm, length L u = 9.825 μm; segment v is joined by a straight line of width W 21 =3.60 μm and W 22 =3.70 μm, length L v =9.01 μm; segment W is connected by a straight line with width W 22 =3.70 μm and W 23 =3.80 μm, length L w = 9.155 μm; segment x is connected by a straight line with width W 23 =3.80 μm and W 24 =3.90 μm, length L x = 9.4375 μm; segment y is connected by a straight line with width W 24 =3.90 μm and W R =4.00 μm, length L y = 9.6513 μm. The selection of adiabatic mode converter length of the present invention is based on the balanced mode conversion power loss along the mode propagation direction. Through simulation and analog calculation, the lengths selected by the fragments correspond to the same mode conversion power loss. By the above structural arrangement, the adiabatic mode converter proposed by the present invention can achieve very high mode conversion efficiency.
Because mode mixing occurs in the ridge waveguide, conversion of a variety of different modes can be achieved. Although achieving transitions between different modes appears to be merely a difference in geometric parameters in the ridge waveguide, in practice analysis and simulation calculations of modes in the waveguide are involved, such as the need to calculate at what width of the waveguide a TM is likely to occur 0 And TE (TE) 3 The mode conversion, the width determination only ensures that it is possible to achieve conversion, then the continuous trial design is performed specifically, the reasons for failure are analyzed for the design cases, then the improvement is performed a plurality of times, and the ideal result is finally obtained, and better effect is achieved than the existing design, so that the design of the adiabatic mode converter is not merely the change of geometric parameters.
The initial width W of the top silicon core 2 L And end width W R Not the only, is 1.60 μm<W L <3.27 μm and W R >3.60 μm. The material of the cladding 3 of the adiabatic mode converter may also be air.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (1)
1. Be applicable to TM 0 And TE (TE) 3 Adiabatic mode converter for mode conversion, characterized by comprising a silicon core and a cladding (3); the silicon core is of a ridge waveguide structure and consists of a bottom silicon core (1) and a top silicon core (2); the width of the bottom silicon core (1) is kept unchanged along the light beam propagation direction; the input end and the output end of the top silicon core (2) are parallel plate waveguides respectively, and the width of the input end is 1.60μm< W L < 3.27 μm, width of output endW R = 4.00 μm, along the beam propagation direction, the top silicon core (2) between the input end and the output end is composed of 25 continuous segments from segment a to segment y, and segment a is formed by connecting the widths of straight linesW L AndW 1 = 3.20 μm, lengthL a = 67.54 μm; segment b is connected by a straight lineW 1 = 3.20 μm andW 2 = 3.25 μm is of length ofL b = 143.112 μm; segment c is connected by a straight lineW 2 = 3.25 μm andW 3 = 3.27 μm is of length ofL c = 197.048 μm; segment d is connected by a straight lineW 3 = 3.27 μm andW 4 = 3.285 μm is of length ofL d = 337.45 μm; segment e is connected by a straight lineW 4 = 3.285 μm andW 5 = 3.295 μm is of length ofL e = 365.675 μm; segment f is connected by a straight lineW 5 = 3.295 μm andW 6 = 3.302 μm is of length ofL f = 478.26 μm; segment g is connected by a straight lineW 6 = 3.302 μm andW 7 = 3.308 μm is of length ofL g = 559.412 μm; segment h is connected by a straight lineW 7 = 3.308 μm andW 8 = 3.312 μm is of length ofL h = 607.1 μm; segment i is connected by a straight lineW 8 = 3.312 μm andW 9 = 3.316 μm is of length ofL i = 626.688 μm; segment j is connected by a straight lineW 9 = 3.316 μm andW 10 = 3.320 μm is of length ofL j = 635.04 μm; segment k is connected by a straight lineW 10 = 3.320 μm andW 11 = 3.324 μm is of length ofL k = 682.444 μm; segment l is connected by a straight lineW 11 = 3.324 μm andW 12 = 3.327 μm, lengthL l = 588.6 μm; segment m is connected by a straight lineW 12 = 3.327 μm andW 13 = 3.331 μm is of length ofL m = 776.35 μm; segment n is connected by a straight lineW 13 = 3.331 μm andW 14 = 3.336 μm is of length ofL c = 553.125 μm; segment o is connected by a straight lineW 14 = 3.336 μm andW 15 = 3.342 μm is of length ofL o = 521.063 μm; segment p is connected by a straight lineW 15 = 3.342 μm andW 16 = 3.350 μm is of length ofL p = 499.225 μm; segment q is connected by a straight lineW 16 = 3.350 μm andW 17 =3.360 μm is of length ofL q = 338.413 μm; segment r is connected by a straight lineW 17 = 3.360 μm andW 18 = 3.380 μm is of length ofL r = 298.487 μm; segment s is connected by a straight lineW 18 = 3.380 μm andW 19 = 3.420 μm is of length ofL s = 193.5 μm; fragmentst is the width of the straight line connectionW 19 = 3.420 μm andW 20 = 3.500 μm is of length ofL t = 89.595 μm; segment u is connected by a straight line to a widthW 20 = 3.50 μm andW 21 = 3.60 μm is of length ofL u = 9.825 μm; segment v is joined by a straight lineW 21 = 3.60 μm andW 22 = 3.70 μm is of length ofL v = 9.01 μm; segment w is connected by a straight lineW 22 = 3.70 μm andW 23 = 3.80 μm is of length ofL w = 9.155 μm; segment x is connected by a straight lineW 23 = 3.80 μm andW 24 = 3.90 μm is of length ofL x = 9.4375 μm; segment y is connected by a straight lineW 24 = 3.90 μm andW R length ofL y = 9.6513 μm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211347461.7A CN116482806B (en) | 2022-10-31 | 2022-10-31 | Be applicable to TM 0 And TE (TE) 3 Adiabatic mode converter for mode conversion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211347461.7A CN116482806B (en) | 2022-10-31 | 2022-10-31 | Be applicable to TM 0 And TE (TE) 3 Adiabatic mode converter for mode conversion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116482806A CN116482806A (en) | 2023-07-25 |
| CN116482806B true CN116482806B (en) | 2023-11-17 |
Family
ID=87210697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211347461.7A Active CN116482806B (en) | 2022-10-31 | 2022-10-31 | Be applicable to TM 0 And TE (TE) 3 Adiabatic mode converter for mode conversion |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116482806B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114047628A (en) * | 2021-11-22 | 2022-02-15 | 南通大学 | Design method of adiabatic polarization rotator |
| CN114488389A (en) * | 2022-02-24 | 2022-05-13 | 南通大学 | Adiabatic guided wave system |
| CN114895402A (en) * | 2022-05-18 | 2022-08-12 | 南通大学 | Thermal insulation guided wave system of skew |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6276840B2 (en) * | 2014-03-05 | 2018-02-07 | 日本電信電話株式会社 | Polarization rotation circuit |
| US9746609B2 (en) * | 2015-06-30 | 2017-08-29 | Elenion Technologies, Llc | Integrated on-chip polarizer |
| US9810840B2 (en) * | 2016-01-06 | 2017-11-07 | Elenion Technologies Llc | Integrated on-chip polarizer |
-
2022
- 2022-10-31 CN CN202211347461.7A patent/CN116482806B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114047628A (en) * | 2021-11-22 | 2022-02-15 | 南通大学 | Design method of adiabatic polarization rotator |
| CN114488389A (en) * | 2022-02-24 | 2022-05-13 | 南通大学 | Adiabatic guided wave system |
| CN114895402A (en) * | 2022-05-18 | 2022-08-12 | 南通大学 | Thermal insulation guided wave system of skew |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116482806A (en) | 2023-07-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7072547B2 (en) | Waveguide coupling into photonic crystal waveguides | |
| US9929534B2 (en) | Optically pumpable waveguide amplifier with amplifier having tapered input and output | |
| CN114167545B (en) | Design method of ultra-compact adiabatic mode coupler | |
| JP2007072433A (en) | Optical integrated device and optical control device | |
| CN112230338B (en) | Ultra-wideband on-chip polarization beam splitting rotator based on reverse biconical asymmetric coupler | |
| CN114488389B (en) | Adiabatic guided wave system | |
| CN114895402B (en) | Offset heat insulation guided wave system | |
| CN112327411A (en) | Silicon-based polarization beam splitting rotator based on adiabatic conical asymmetric coupling and Y-branch | |
| CN114114540B (en) | Design method of efficient compact adiabatic mode converter | |
| Guo et al. | Compact and flexible mode-order converter based on mode transitions composed of asymmetric tapers and subwavelength gratings | |
| CN114047628B (en) | Design method of adiabatic polarization rotator | |
| Zhang et al. | Nonparaxial mode-size converter using an ultracompact metamaterial Mikaelian lens | |
| Guo et al. | Ultracompact mode-order converting power splitter for mid-infrared wavelengths using an MMI coupler embedded with oblique subwavelength grating wires | |
| Daly et al. | Crosstalk reduction in intersecting rib waveguides | |
| US11579367B2 (en) | Integrated waveguide polarizer | |
| CN116482806B (en) | Be applicable to TM 0 And TE (TE) 3 Adiabatic mode converter for mode conversion | |
| CN115951451B (en) | Be applicable to TM 1 And TE (TE) 2 Adiabatic mode converter for mode conversion | |
| CN101881859A (en) | Optical delayer coupled through adopting multiple-mode interference | |
| CN114114681B (en) | Numerical design method of adiabatic mode coupler | |
| CN114326101B (en) | Design method of adiabatic mode evolution device | |
| CN115718347B (en) | Suitable for TE 1 And TE (TE) 3 Adiabatic mode switching connector for switching between modes | |
| Modotto et al. | Imaging properties of multimode photonic crystal waveguides and waveguide arrays | |
| WO2006049324A1 (en) | Waveguide type beam parameter product control optical circuit and optical integrated circuit | |
| JP2007047694A (en) | Optical transmission line and optical element possessing the same | |
| CN115494586B (en) | Double-waveguide adiabatic coupler |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |