CN116482806A - Be applicable to TM 0 And TE (TE) 3 Adiabatic mode converter for mode conversion - Google Patents
Be applicable to TM 0 And TE (TE) 3 Adiabatic mode converter for mode conversion Download PDFInfo
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- CN116482806A CN116482806A CN202211347461.7A CN202211347461A CN116482806A CN 116482806 A CN116482806 A CN 116482806A CN 202211347461 A CN202211347461 A CN 202211347461A CN 116482806 A CN116482806 A CN 116482806A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000005253 cladding Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12152—Mode converter
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a method suitable for TM 0 And TE (TE) 3 An adiabatic mode converter for mode conversion, comprising a silicon core and a cladding; the silicon core is of a ridge waveguide structure and consists of a bottom silicon core and a top silicon core; the width of the bottom silicon core is kept unchanged along the propagation direction of the light beam; the input end and the output end of the top silicon core are parallel plate waveguides respectively, and the width of the input end is 1.60 mu m<W L <Width W of output end 3.27 μm R >3.60 μm; along the beam propagation direction, the top silicon core between the input end and the output end consists of 25 continuous segments from segment a to segment y; the adiabatic mode converter of the present invention selects the length of each segment based on the equilibrium mode conversion power loss in the mode propagation direction, and by such an arrangement, an efficient and compact adiabatic mode converter is realized.
Description
Technical Field
The present invention relates to an adiabatic mode converter.
Background
Silicon waveguides based on silicon-on-insulator structures have attracted considerable attention due to their advantages in terms of low cost, compact footprint and compatibility with complementary metal oxide semiconductor processing techniques. Nanoscale silicon waveguides are important for their potential use in photonic integrated circuits. Adiabatic devices are an essential component of photonic integrated chips. In addition to waveguide loss, substrate loss, optical confinement and space occupation, polarization issues must be addressed when designing adiabatic devices. In a vertically asymmetric waveguide, mode mixing can be used for switching between TM mode and TE higher order modes in a ridge waveguide.
Adiabatic mode converters are very important for integrated optical applications because they have a wide bandwidth and high tolerance to manufacturing variations. Furthermore, adiabatic mode converters are key elements in polarization diversity circuits for achieving a unipolar state in a photonic integrated chip. Adiabatic mode converters are used to perform mode conversion between two waveguides having different cross sections. In optical waveguides with high refractive index contrast, mode mixing is important for certain specific waveguide widths. Thus, mode conversion may occur in the ridge waveguide. Thus, the use of adiabatic mode converters requires that a particular TM be realized by changing the guided wave structure from input to output 0 Mode evolution to TE 3 Mode, or TE 3 Mode evolution to TM 0 A mode. In the design of adiabatic mode converters, adiabatic mode conversion can be achieved by slowly increasing/decreasing the size of the device cross section. Furthermore, when the change is slow enough, the mode conversion in the adiabatic mode converter may be considered lossless.
Due to TM 0 Mode and TE 3 The transition between modes is complex and is designed to be suitable for TM 0 And TE (TE) 3 In the case of adiabatic mode converters for mode conversion, although the waveguide structure can be simply changed linearly to obtain the required device length for a particular mode conversion efficiency, the device length obtained in this way can be far beyond that required.
Disclosure of Invention
The invention aims to: aiming at the prior art, an ultra-compact adiabatic mode converter is provided for realizing TM 0 And TE (TE) 3 Mode transition between modes.
The technical scheme is as follows: be applicable to TM 0 And TE (TE) 3 An adiabatic mode converter for mode conversion, comprising a silicon core and a cladding; the silicon core is of a ridge waveguide structure and consists of a bottom silicon core and a top silicon core; the width of the bottom silicon core is kept unchanged along the propagation direction of the light beam; the input end and the output end of the top silicon core are parallel plates respectivelyWaveguide, width of input end 1.60 μm<W L <Width W of output end 3.27 μm R >3.60 μm, the top silicon core between the input and output ends is composed of 25 consecutive segments a-y along the beam propagation direction, segment a is composed of a straight line connecting width W L And W is 1 Length l=3.20 μm a =67.54 μm; segment b is joined by a straight line of width W 1 =3.20 μm and W 2 =3.25 μm, length L b = 143.112 μm; segment c is joined by a straight line of width W 2 =3.25 μm and W 3 =3.27 μm, length L c = 197.048 μm; segment d is connected by a straight line with width W 3 =3.27 μm and W 4 = 3.285 μm length L d = 337.45 μm; segment e is connected by a straight line with width W 4 = 3.285 μm and W 5 =3.295 μm, length L e = 365.675 μm; segment f is connected by a straight line with width W 5 =3.295 μm and W 6 =3.302 μm, length L f = 478.26 μm; segment g is joined by a straight line of width W 6 =3.302 μm and W 7 =3.308 μm, length L g = 559.412 μm; segment h is joined by a straight line of width W 7 =3.308 μm and W 8 = 3.312 μm length L h = 607.1 μm; segment i is connected by a straight line with width W 8 = 3.312 μm and W 9 =3.316 μm, length L i = 626.688 μm; segment j is connected by a straight line with width W 9 =3.316 μm and W 10 = 3.320 μm length L j = 635.04 μm; segment k is connected by a straight line with width W 10 = 3.320 μm and W 11 = 3.324 μm length L k = 682.444 μm; segment l is connected by a straight line with width W 11 = 3.324 μm and W 12 =3.327 μm, length L l =588.6 μm; segment m is connected by a straight line with width W 12 =3.327 μm and W 13 = 3.331 μm length L m = 776.35 μm; segment n is connected by a straight line with width W 13 = 3.331 μm and W 14 = 3.336 μm length L c = 553.125 μm; segment o is connected by a straight line with width W 14 = 3.336 μm and W 15 = 3.342 μm length L o = 521.063 μm; segment p is connected by a straight line with width W 15 = 3.342 μm and W 16 =3.350 μm, length L p = 499.225 μm; segment q is joined by a straight line of width W 16 =3.350 μm and W 17 = 3.360 μm length L q = 338.413 μm; segment r is connected by a straight line with width W 17 = 3.360 μm and W 18 = 3.380 μm length L r = 298.487 μm; segment s is connected by a straight line with width W 18 = 3.380 μm and W 19 = 3.420 μm length L s =193.5 μm; segment t is connected by a straight line with width W 19 = 3.420 μm and W 20 =3.500 μm, length L t = 89.595 μm; segment u is connected by a straight line with width W 20 =3.50 μm and W 21 =3.60 μm, length L u = 9.825 μm; segment v is joined by a straight line of width W 21 =3.60 μm and W 22 =3.70 μm, length L v =9.01 μm; segment W is connected by a straight line with width W 22 =3.70 μm and W 23 =3.80 μm, length L w = 9.155 μm; segment x is connected by a straight line with width W 23 =3.80 μm and W 24 =3.90 μm, length L x = 9.4375 μm; segment y is connected by a straight line with width W 24 =3.90 μm and W R Length L y ＝9.6513μm。
The beneficial effects are that: the adiabatic mode converter of the present invention selects the length of each segment based on the equilibrium mode conversion power loss in the mode propagation direction, and by such an arrangement, an efficient and compact adiabatic mode converter is realized. Comparing the design of the present invention with the design of the straight line connection case as shown in fig. 2, the mode conversion efficiency of both cases is shown in fig. 7 and 8. It can be seen from the figures that the design of the present invention is far better in efficiency than the case of a straight connection. For example, when 96% transmission efficiency is to be achieved, the design of the present invention requires only 534 μm length, whereas the straight line connection case requires 8420 μm length. Therefore, when 96% of power transmission is required, the length required for the straight line case is 16 times that required for the design of the present invention, i.e., the present invention greatly reduces the size of the adiabatic mode converter, and a compact design in the photonic integrated chip is realized. Such an ultra-compact adiabatic mode converter constitutes a key component of a polarization diversity system, and can be applied to a polarization incoherent integrated photonic circuit in a hybrid structure.
Drawings
FIG. 1 is a schematic cross-sectional view of an adiabatic mode converter of the present invention;
FIG. 2 is a schematic top view of a conventional structure with a straight line connection;
FIG. 3 shows the TM at the input of an adiabatic mode converter 0 A pattern diagram;
FIG. 4 is a TE view of the output of an adiabatic mode converter 3 A pattern diagram;
FIG. 5 is a schematic diagram of the geometry of the top silicon core of the adiabatic mode converter of the present invention;
FIG. 6 is a stretched enlarged view of segment u through segment y in the horizontal direction;
FIG. 7 is a graph of mode conversion efficiency of an adiabatic mode converter of the present invention;
fig. 8 is a graph of mode conversion efficiency of the adiabatic mode converter of the straight line connection type.
Detailed Description
The invention is further explained below with reference to the drawings.
As shown in FIG. 1, one is suitable for use with a TM 0 And TE (TE) 3 An adiabatic mode converter for mode conversion comprises a silicon core and a cladding 3. Refractive index n of silicon core Si = 3.455 the silicon core is a ridge waveguide structure, consisting of a bottom silicon core 1 and a top silicon core 2. Thickness h of bottom silicon core 1 2 Along the beam propagation direction, the width of the bottom silicon core 1 remains w =220 nm 0 Unchanged; thickness h of top silicon core 2 3 =280 nm. The material of the cladding 3 is silicon dioxide, and the refractive index n SiO2 =1.445, thickness h 1 >(h 2 +h 3 ) Width W 0 >w 0 . The incident beam wavelength was set to 1550nm.
In the conventional structure, the linear connection mode of the width change of the top silicon core 2 is shown in fig. 2. The left end a is the input end of the adiabatic mode converter and the right end c is the output end of the adiabatic mode converter. The length of the device obtained by the straight line connection mode can obviously exceed the required lengthThe desired length, therefore, is an object of the present invention to design a highly efficient, compact geometry to achieve TM 0 And TE (TE) 3 Transition between modes. FIG. 3 is a schematic diagram of the TM input to an adiabatic mode converter 0 Mode, FIG. 4 is TE at the output 3 A mode.
In the present embodiment, as shown in fig. 5 and 6, the input end and the output end of the top silicon core 2 are parallel plate waveguides, respectively, and the width W of the input end L Width W of output end =3.00 μm R The top silicon core 2 between the input and output ends, along the beam propagation direction, is composed of 25 consecutive segments, segment a-segment y, each segment having a width W and length designed as follows: segment a is connected by a straight line with width W L =3.00 and W 1 Length l=3.20 μm a =67.54 μm; segment b is joined by a straight line of width W 1 =3.20 μm and W 2 =3.25 μm, length L b = 143.112 μm; segment c is joined by a straight line of width W 2 =3.25 μm and W 3 =3.27 μm, length L c = 197.048 μm; segment d is connected by a straight line with width W 3 =3.27 μm and W 4 = 3.285 μm length L d = 337.45 μm; segment e is connected by a straight line with width W 4 = 3.285 μm and W 5 =3.295 μm, length L e = 365.675 μm; segment f is connected by a straight line with width W 5 =3.295 μm and W 6 =3.302 μm, length L f = 478.26 μm; segment g is joined by a straight line of width W 6 =3.302 μm and W 7 =3.308 μm, length L g = 559.412 μm; segment h is joined by a straight line of width W 7 =3.308 μm and W 8 = 3.312 μm length L h = 607.1 μm; segment i is connected by a straight line with width W 8 = 3.312 μm and W 9 =3.316 μm, length L i = 626.688 μm; segment j is connected by a straight line with width W 9 =3.316 μm and W 10 = 3.320 μm length L j = 635.04 μm; segment k is connected by a straight line with width W 10 = 3.320 μm and W 11 = 3.324 μm length L k = 682.444 μm; segment l is connected by a straight line with width W 11 = 3.324 μm and W 12 =3.327 μm, length L l =588.6 μm; segment m is connected by a straight line with width W 12 =3.327 μm and W 13 = 3.331 μm length L m = 776.35 μm; segment n is connected by a straight line with width W 13 = 3.331 μm and W 14 = 3.336 μm length L c = 553.125 μm; segment o is connected by a straight line with width W 14 = 3.336 μm and W 15 = 3.342 μm length L o = 521.063 μm; segment p is connected by a straight line with width W 15 = 3.342 μm and W 16 =3.350 μm, length L p = 499.225 μm; segment q is joined by a straight line of width W 16 =3.350 μm and W 17 = 3.360 μm length L q = 338.413 μm; segment r is connected by a straight line with width W 17 = 3.360 μm and W 18 = 3.380 μm length L r = 298.487 μm; segment s is connected by a straight line with width W 18 = 3.380 μm and W 19 = 3.420 μm length L s =193.5 μm; segment t is connected by a straight line with width W 19 = 3.420 μm and W 20 =3.500 μm, length L t = 89.595 μm; segment u is connected by a straight line with width W 20 =3.50 μm and W 21 =3.60 μm, length L u = 9.825 μm; segment v is joined by a straight line of width W 21 =3.60 μm and W 22 =3.70 μm, length L v =9.01 μm; segment W is connected by a straight line with width W 22 =3.70 μm and W 23 =3.80 μm, length L w = 9.155 μm; segment x is connected by a straight line with width W 23 =3.80 μm and W 24 =3.90 μm, length L x = 9.4375 μm; segment y is connected by a straight line with width W 24 =3.90 μm and W R =4.00 μm, length L y = 9.6513 μm. The selection of adiabatic mode converter length of the present invention is based on the balanced mode conversion power loss along the mode propagation direction. Through simulation and analog calculation, the lengths selected by the fragments correspond to the same mode conversion power loss. By the above structural arrangement, the adiabatic mode converter proposed by the present invention can achieve very high mode conversion efficiency.
Because mode mixing occurs in the ridge waveguide, conversion of a variety of different modes can be achieved. Although implementing different modesThe transition between seemed to be just a difference in the geometry of the ridge waveguide, but actually involved analysis and simulation calculations of modes in the waveguide, such as the need to calculate what width of the waveguide is where TM might occur 0 And TE (TE) 3 The mode conversion, the width determination only ensures that it is possible to achieve conversion, then the continuous trial design is performed specifically, the reasons for failure are analyzed for the design cases, then the improvement is performed a plurality of times, and the ideal result is finally obtained, and better effect is achieved than the existing design, so that the design of the adiabatic mode converter is not merely the change of geometric parameters.
The initial width W of the top silicon core 2 L And end width W R Not the only, is 1.60 μm<W L <3.27 μm and W R >3.60 μm. The material of the cladding 3 of the adiabatic mode converter may also be air.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (1)
1. Be applicable to TM 0 And TE (TE) 3 Adiabatic mode converter for mode conversion, characterized by comprising a silicon core and a cladding (3); the silicon core is of a ridge waveguide structure and consists of a bottom silicon core (1) and a top silicon core (2); the width of the bottom silicon core (1) is kept unchanged along the light beam propagation direction; the input end and the output end of the top silicon core (2) are respectively parallel plate waveguides, and the width of the input end is 1.60 mu m<W L <Width W of output end 3.27 μm R >3.60 μm, the top silicon core (2) between the input and output ends is composed of 25 consecutive segments a-y along the beam propagation direction, segment a is composed of a straight line connecting width W L And W is 1 Length l=3.20 μm a =67.54 μm; segment b is joined by a straight line of width W 1 =3.20 μm and W 2 =3.25 μm, length L b = 143.112 μm; segment c is joined by a straight line of width W 2 =3.25 μm and W 3 =3.27 μm, length L c = 197.048 μm; segment d is connected by a straight line with width W 3 =3.27 μm and W 4 = 3.285 μm length L d = 337.45 μm; segment e is connected by a straight line with width W 4 = 3.285 μm and W 5 =3.295 μm, length L e = 365.675 μm; segment f is connected by a straight line with width W 5 =3.295 μm and W 6 =3.302 μm, length L f = 478.26 μm; segment g is joined by a straight line of width W 6 =3.302 μm and W 7 =3.308 μm, length L g = 559.412 μm; segment h is joined by a straight line of width W 7 =3.308 μm and W 8 = 3.312 μm length L h = 607.1 μm; segment i is connected by a straight line with width W 8 = 3.312 μm and W 9 =3.316 μm, length L i = 626.688 μm; segment j is connected by a straight line with width W 9 =3.316 μm and W 10 = 3.320 μm length L j = 635.04 μm; segment k is connected by a straight line with width W 10 = 3.320 μm and W 11 = 3.324 μm length L k = 682.444 μm; segment l is connected by a straight line with width W 11 = 3.324 μm and W 12 =3.327 μm, length L l =588.6 μm; segment m is connected by a straight line with width W 12 =3.327 μm and W 13 = 3.331 μm length L m = 776.35 μm; segment n is connected by a straight line with width W 13 = 3.331 μm and W 14 = 3.336 μm length L c = 553.125 μm; segment o is connected by a straight line with width W 14 = 3.336 μm and W 15 = 3.342 μm length L o = 521.063 μm; segment p is connected by a straight line with width W 15 = 3.342 μm and W 16 =3.350 μm, length L p = 499.225 μm; segment q is joined by a straight line of width W 16 =3.350 μm and W 17 = 3.360 μm length L q = 338.413 μm; segment r is connected by a straight line with width W 17 = 3.360 μm and W 18 = 3.380 μm length L r = 298.487 μm; segment s is connected by a straight line with width W 18 = 3.380 μm and W 19 = 3.420 μm length L s ＝193.5 μm; segment t is connected by a straight line with width W 19 = 3.420 μm and W 20 =3.500 μm, length L t = 89.595 μm; segment u is connected by a straight line with width W 20 =3.50 μm and W 21 =3.60 μm, length L u = 9.825 μm; segment v is joined by a straight line of width W 21 =3.60 μm and W 22 =3.70 μm, length L v =9.01 μm; segment W is connected by a straight line with width W 22 =3.70 μm and W 23 =3.80 μm, length L w = 9.155 μm; segment x is connected by a straight line with width W 23 =3.80 μm and W 24 =3.90 μm, length L x = 9.4375 μm; segment y is connected by a straight line with width W 24 =3.90 μm and W R Length L y ＝9.6513μm。
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|---|---|---|---|---|
| US20170003451A1 (en) * | 2015-06-30 | 2017-01-05 | Coriant Advanced Technology Llc | Integrated on-chip polarizer |
| US20170068048A1 (en) * | 2014-03-05 | 2017-03-09 | Nippon Telegraph And Telephone Corporation | Polarization rotator |
| US20170192171A1 (en) * | 2016-01-06 | 2017-07-06 | Coriant Advanced Technology, LLC | Integrated on-chip polarizer |
| CN114047628A (en) * | 2021-11-22 | 2022-02-15 | 南通大学 | Design method of adiabatic polarization rotator |
| CN114488389A (en) * | 2022-02-24 | 2022-05-13 | 南通大学 | Adiabatic guided wave system |
| CN114895402A (en) * | 2022-05-18 | 2022-08-12 | 南通大学 | Thermal insulation guided wave system of skew |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170068048A1 (en) * | 2014-03-05 | 2017-03-09 | Nippon Telegraph And Telephone Corporation | Polarization rotator |
| US20170003451A1 (en) * | 2015-06-30 | 2017-01-05 | Coriant Advanced Technology Llc | Integrated on-chip polarizer |
| US20170192171A1 (en) * | 2016-01-06 | 2017-07-06 | Coriant Advanced Technology, LLC | Integrated on-chip polarizer |
| CN114047628A (en) * | 2021-11-22 | 2022-02-15 | 南通大学 | Design method of adiabatic polarization rotator |
| CN114488389A (en) * | 2022-02-24 | 2022-05-13 | 南通大学 | Adiabatic guided wave system |
| CN114895402A (en) * | 2022-05-18 | 2022-08-12 | 南通大学 | Thermal insulation guided wave system of skew |
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