CN114879305A - Silicon-based mold divider and preparation method thereof - Google Patents
Silicon-based mold divider and preparation method thereof Download PDFInfo
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
Abstract
The invention provides a silicon-based mold divider and a preparation method thereof, wherein the silicon-based mold divider comprises a substrate, a lower cladding, a core layer and an upper cladding which are sequentially stacked; the core layer comprises a waveguide and a functional region which are connected with each other, and the waveguide comprises a first waveguide and a second waveguide; the functional region is located between the first waveguide and the second waveguide, the first waveguide comprises a first wide waveguide, a first tapered waveguide and a narrow waveguide which are connected in sequence, and the second waveguide comprises a second tapered waveguide and a second wide waveguide which are connected in sequence. The silicon-based mode splitter can realize the separation of a high-order mode and a low-order mode on the premise of not changing the mode order. The device greatly enriches the mode division multiplexing system and provides an optical device based on reverse design. The optimization of the functional area is realized through reverse design, the related loss and crosstalk are greatly reduced, the bandwidth is increased while the compact size is realized, and the stability of related performance is improved.
Description
Technical Field
The invention relates to a silicon-based mold divider and a preparation method thereof, belonging to the technical field of integrated optoelectronic devices.
Background
With the emergence of various emerging industries such as automatic driving, cloud service, internet of things and the like, the demand of communication capacity is explosively increased, and the 5G era of high-speed and high-capacity data transmission comes. Currently, single-mode fiber communication based on wavelength division multiplexing is limited by nonlinear shannon capacity, and the communication capacity is about to reach the bottleneck. To further increase the communication capacity, space division multiplexing techniques are proposed. The space division multiplexing technology includes a multi-core fiber and a mode division multiplexing technology.
Mode division multiplexing has received wide attention in recent years, and independent orthogonal modes in few-mode/multi-mode waveguides are used as channels for signal transmission, so that communication capacity is greatly improved. The modular multiplexing system on a silicon substrate benefits from the high refractive index contrast between silicon and silicon dioxide, and has the advantages of low loss, small size, good stability, compatibility with mature CMOS processes, and the like. In order to construct an optical division multiplexing system on a silicon substrate, optical devices such as a mode (de) multiplexer, a mode converter, a mode selection switch, a mode filter, and a mode splitter have been reported.
The module splitter has important significance for constructing a module division multiplexing system. In the already reported mode splitters, mode demultiplexers based on asymmetric directional couplers, adiabatic couplers, multimode interference couplers, etc. are used to achieve mode separation. A mode demultiplexer-based modulus divider may achieve mode separation but may change the mode order. For mode sensitive devices such as a high-order mode filter, a mode selection switch and a mode modulator, an additional mode converter or other devices capable of changing the mode order are required to be connected, and the complexity of the system is increased. Currently, directional coupler based mode splitters that do not change the mode order have been reported. These mode splitters require sufficient mode coupling and therefore require a sufficiently long length, resulting in a large overall size.
In view of the above, it is necessary to provide a silicon-based mode splitter and a method for manufacturing the same, so as to solve the problems of changing mode orders and large size, achieve the effect of separating high-order mode and low-order mode without changing mode orders, and achieve compact size.
Disclosure of Invention
The invention aims to provide a silicon-based mold divider, which comprises a substrate, a lower cladding, a core layer and an upper cladding which are sequentially stacked; the core layer comprises a waveguide and a functional region which are connected with each other, and the waveguide comprises a first waveguide and a second waveguide; the functional region is located between the first waveguide and the second waveguide, the first waveguide comprises a first wide waveguide, a first tapered waveguide and a narrow waveguide which are connected in sequence, and the second waveguide comprises a second tapered waveguide and a second wide waveguide which are connected in sequence.
As a further improvement of the present invention, the substrate and the waveguide are made of silicon, the lower cladding and the upper cladding are made of silicon dioxide, and the functional region is made of silicon and silicon dioxide, or silicon and a phase change material.
As a further improvement of the present invention, the left side of the first tapered waveguide is a wide side and connected with the first wide waveguide, and the right side of the first tapered waveguide is a narrow side and connected with the narrow waveguide; the right side of the second tapered waveguide is a wide side and is connected with the second wide waveguide.
As a further improvement of the present invention, the first tapered waveguide and the second tapered waveguide are identical in size, and the narrow side of the first tapered waveguide is parallel to the wide side of the second tapered waveguide; respectively inputting a high-order mode and a low-order mode into the first wide waveguide, wherein the high-order mode is guided by the first tapered waveguide to enter the functional region, and the mode order is not changed during transmission in the functional region and then is output from the second waveguide; the transmission of low order modes along the first waveguide does not change the mode order.
As a further improvement of the present invention, the functional region is composed of several identical sub-wavelength units, each sub-wavelength unit is filled with silicon or silicon dioxide, and the two states are respectively represented by 0 and 1 in the DBS algorithm; in the initial layout, a sub-wavelength unit is filled with silicon, the figure of merit (FOM) of the sub-wavelength unit is calculated, then materials are switched between the silicon and the silicon dioxide from the first sub-wavelength unit, the FOMs under the two materials are compared, and the corresponding material with a higher FOM value is reserved; performing the same optimization on the next subunit until the last subunit completes the optimization into one iteration; and repeating iteration to obtain an optimized structure.
The invention also aims to provide a preparation method of the silicon-based mold divider so as to better apply the silicon-based mold divider.
In order to achieve the above object, the present invention provides a method for manufacturing a silicon-based mold divider, wherein the method for manufacturing the silicon-based mold divider is applied to the silicon-based mold divider, and the method for manufacturing the silicon-based mold divider mainly comprises:
step 1, arranging a substrate;
step 2, depositing a lower cladding on the substrate;
step 3, depositing a waveguide layer on the lower cladding layer and then etching the core layer;
and 4, depositing an upper cladding layer on the core layer to provide optical insulation.
As a further improvement of the present invention, step 3 specifically includes: providing a first wide waveguide and a second wide waveguide, the first wide waveguide and the second wide waveguide transmitting a high order mode and a low order mode; the narrow waveguide is arranged to transmit low order modes.
As a further improvement of the present invention, the first tapered waveguide realizes low-loss transmission of a low-order mode and guides a high-order mode to the functional region, and the second tapered waveguide guides a high-order mode from the functional region to the second wide waveguide.
As a further improvement of the present invention, step 3 specifically includes:
step 31, performing Electron Beam Lithography (EBL), namely putting a photoresist sample wafer which is subjected to spin coating into an EBL equipment cabin, moving the sample wafer to a preset scanning position, scanning the photoresist sample wafer to form an optimized core layer pattern, automatically scanning according to the specified core layer pattern after aligning the focus of an electron gun, wherein the acceleration voltage of a processed electron beam is 20KV, the beam current is 120pA, and taking out the wafer from the EBL equipment cabin after directly writing the structure;
and 32, developing, namely putting the photoetched sample wafer into a mixed solution of methyl isobutyl ketone (MIBK) and IPA at room temperature, wherein the molar ratio is MIBK: IPA 1: developing for 35 seconds, fixing in IPA solution for 50 seconds, developing to obtain a sample wafer with a core layer pattern photoetched by electron beam lithography, baking at 60 deg.C for 5 minutes and 90 deg.C for 10 minutes;
and 33, etching the sample wafer, and etching the developed sample wafer by using an ICP etching machine, wherein the source power of the ICP etching machine is 80W, the etching time is about 1 minute and 40 seconds, and the etching gas is SF 4 And C 4 F 8 The gas flow is respectively 10sccm and 15sccm, and the etching depth is 220 nm;
and step 34, washing away residual glue, namely, remaining some electron beam exposure glue PMMA on the etched core layer, respectively carrying out ultrasonic cleaning for 10 minutes by using acetone, ketone, isopropyl alcohol and deionized water, and drying the sample wafer by using a nitrogen gun after the cleaning is finished.
As a further improvement of the invention, the lower cladding is 3 μm SiO 2 。
The invention has the beneficial effects that: the subwavelength units are innovatively introduced into the functional region, and the refractive index distribution of the functional region is changed by utilizing different material distributions of the subwavelength units. The light of the high-order mode is disturbed by the sub-wavelength unit in the functional region, so that the transmission is realized under the condition of not changing the mode order. The silicon-based mode splitter realizes low loss, low crosstalk, large bandwidth, unchanged mode order and compact size. The expansibility is strong, different FOMs are set through the reverse design of the functional area, and the separation of any high-order mode and any low-order mode can be realized. The device greatly enriches the mode division multiplexing system, increases the flexibility of the integrated photonic device and provides an optical device based on reverse design.
Drawings
FIG. 1 is a schematic cross-sectional view of a silicon-based mold divider of the present invention.
FIG. 2 is a schematic view of the structure of the substrate, under-cladding layer and core layer in the present invention.
Fig. 3 is a structural view of a core layer in the present invention.
Fig. 4 is a structural view of a functional region of a core layer in the present invention.
Fig. 5 is a schematic three-dimensional structure diagram of the silicon-based mold divider of the present invention.
FIG. 6 is a silicon-based mode splitter input TE of the present invention 0 Transmission spectrum when in mode.
FIG. 7 is a silicon-based mode splitter input TE of the present invention 1 Transmission spectrum when in mode.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in detail with reference to the accompanying drawings and specific embodiments.
Referring to fig. 1, 2, 3 and 4, the present invention provides a silicon-based mode splitter, which includes a substrate 001, a lower cladding layer 002, a core layer 004 and an upper cladding layer 003, which are sequentially stacked; the core layer 004 comprising the interconnected waveguide and functional region 103, the core layer comprising the first waveguide 101 and the second waveguide 102; the functional region 103 is located between the first waveguide 101 and the second waveguide 102, the first waveguide 101 includes a first wide waveguide 201, a first tapered waveguide 202 and a narrow waveguide 203 which are connected in sequence, and the second waveguide 102 includes a second tapered waveguide 301 and a second wide waveguide 302 which are connected in sequence.
The substrate 001 and the waveguide are made of silicon, the lower cladding layer 002 and the upper cladding layer 003 are made of silicon dioxide, and the functional region 103 is made of silicon and silicon dioxide or silicon and phase change material. The left side of the first tapered waveguide 202 is a wide side and is connected with the first wide waveguide 201, and the right side of the first tapered waveguide 202 is a narrow side and is connected with the narrow waveguide 203; the right side of the second tapered waveguide 301 is a wide side and connects with the second wide waveguide 302. The first tapered waveguide 202 and the second tapered waveguide 301 are consistent in size, and the narrow side of the first tapered waveguide 202 is parallel to the wide side of the second tapered waveguide 301; respectively inputting TE into the first wide waveguides 201 1 Mode and TE 0 Mode(s). TE 1 The mode is guided by the first tapered waveguide 202 to enter the functional region 103, and the transmission in the functional region 103 does not change the mode orderAnd then output from the second waveguide 102; TE 0 The mode transmission along said first waveguide 101 does not change the mode order.
The functional region is composed of a plurality of identical sub-wavelength units, each sub-wavelength unit is filled with silicon or silicon dioxide, and the two states are respectively represented by 0 and 1 in a DBS algorithm; in the initial layout, a sub-wavelength unit is filled with silicon, the figure of merit (FOM) of the sub-wavelength unit is calculated, then materials are switched between the silicon and the silicon dioxide from the first sub-wavelength unit, the FOMs under the two materials are compared, and the corresponding material with a higher FOM value is reserved; performing the same optimization on the next subunit until the last subunit completes the optimization into one iteration; and repeating iteration to obtain an optimized structure.
The preparation method of the silicon-based mold divider mainly comprises the following steps:
step 1, a substrate 001 is arranged; the substrate 001 is a 5mm thick silicon wafer.
Step 2, depositing a lower cladding layer 002 on a substrate 001; the lower cladding 002 is PECVD SiO of 3 μm 2 。
Step 3, etching the core layer 004 on the lower cladding layer 002; the core layer is Si.
The step 3 specifically comprises the following steps: providing a first wide waveguide 201 and a second wide waveguide 302, the first wide waveguide 201 and the second wide waveguide 302 transmitting TE 1 Mode and TE 0 A mode; setting narrow waveguide 203 to transmit TE 0 Mode(s).
The first tapered waveguide 202 implements TE 0 Mode low loss transport and steering TE 1 Mode to the functional area 103. The second tapered waveguide 301 guides TE from the functional region 103 1 Mode to the second wide waveguide 302. Wherein W 1 ＝1μm，W 2 ＝400nm，W 3 ＝400nm，W 4 ＝1μm，W 5 ＝100nm，L＝5μm，g＝1μm。
The step 3 specifically comprises:
step 31, EBL, putting the photoresist sample wafer which is subjected to spin coating into an EBL equipment cabin, moving the sample wafer to a preset scanning position, scanning the photoresist sample wafer to form an optimized core layer 004 pattern, automatically scanning according to the specified core layer 004 pattern after aiming at the focus of an electron gun, taking out the wafer from the EBL equipment cabin after the acceleration voltage of a processed electron beam is 20KV and the beam current is 120pA and directly writing the structure;
and 32, developing, namely putting the photoetched sample wafer into a mixed solution of MIBK and IPA at room temperature, wherein the molar ratio is MIBK: IPA 1: developing for 35 seconds, then fixing in IPA solution for 50 seconds, enabling the sample wafer to show a pattern of a core layer 003 photoetched by electron beam lithography after developing, and then baking on a hot plate at 60 ℃ for 5 minutes and 90 ℃ for 10 minutes;
and 33, etching the sample wafer, and etching the developed sample wafer by using an ICP etching machine, wherein the source power of the ICP etching machine is 80W, the etching time is about 1 minute and 40 seconds, and the etching gas is SF 4 And C 4 F 8 The gas flow is respectively 10sccm and 15sccm, and the etching depth is 220 nm;
step 34, washing residual glue, namely, remaining some electron beam exposure glue PMMA on the core layer 004 after etching is finished, respectively carrying out ultrasonic cleaning for 10 minutes by using acetone, ketone, isopropyl ketone and deionized water, and drying the sample wafer by using a nitrogen gun after cleaning is finished;
the transmission spectrum of the proposed silicon-based mode splitter is shown in fig. 6 and 7 after testing.
In summary, the present invention creatively realizes an ultra-compact silicon-based mode splitter for realizing mode separation by a reverse design method, and the silicon-based mode splitter can realize TE without changing the mode order 0 Mode and TE 1 And (4) separating the modes. The device greatly enriches the mode division multiplexing system. The optimization of the functional region 103 is realized through reverse design, so that the related loss and low crosstalk are greatly reduced, the stability of related performance is improved, and the flexibility of the integrated photonic device is increased. The size of the invention is micron-sized, and the integration level of the system is improved. The present invention may also improve performance by increasing size. The invention and CMOS manufacturing process at the same timeCompatible, and has the advantages of mature process and low cost.
Although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the spirit and scope of the present invention.
Claims (10)
1. A silicon-based mold divider is characterized in that: the multilayer composite material comprises a substrate, a lower cladding, a core layer and an upper cladding which are sequentially laminated; the core layer comprises a waveguide and a functional region which are connected with each other, and the waveguide comprises a first waveguide and a second waveguide; the functional region is located between the first waveguide and the second waveguide, the first waveguide comprises a first wide waveguide, a first tapered waveguide and a narrow waveguide which are connected in sequence, and the second waveguide comprises a second tapered waveguide and a second wide waveguide which are connected in sequence.
2. The silicon-based mold divider of claim 1, wherein: the substrate and the waveguide are made of silicon, the lower cladding and the upper cladding are made of silicon dioxide, and the functional region is made of silicon and silicon dioxide or silicon and a phase-change material.
3. The silicon-based mold divider of claim 1, wherein: the left side of the first tapered waveguide is a wide side and is connected with the first wide waveguide, and the right side of the first tapered waveguide is a narrow side and is connected with the narrow waveguide; the right side of the second tapered waveguide is a wide side and is connected with the second wide waveguide.
4. The silicon-based mold divider of claim 1, wherein: the first tapered waveguide and the second tapered waveguide are consistent in size, and the narrow side of the first tapered waveguide is parallel to the wide side of the second tapered waveguide; respectively inputting a high-order mode and a low-order mode into the first wide waveguide, wherein the high-order mode is guided by the first tapered waveguide to enter the functional region, and the mode order is not changed during transmission in the functional region and then is output from the second waveguide; the transmission of low order modes along the first waveguide does not change the mode order.
5. The silicon-based mold divider of claim 1, wherein: the functional region is composed of a plurality of identical sub-wavelength units, each sub-wavelength unit is filled with silicon or silicon dioxide, and the two states are respectively represented by 0 and 1 in a DBS algorithm; in the initial layout, a sub-wavelength unit is filled with silicon, the figure of merit (FOM) of the sub-wavelength unit is calculated, then materials are switched between the silicon and the silicon dioxide from the first sub-wavelength unit, the FOMs under the two materials are compared, and the corresponding material with a higher FOM value is reserved; performing the same optimization on the next subunit until the last subunit completes the optimization into one iteration; and repeating iteration to obtain an optimized structure.
6. A method for preparing a silicon-based mold divider, which is characterized in that the method for preparing the silicon-based mold divider as claimed in any one of claims 1 to 5 is applied, and the method for preparing the silicon-based mold divider mainly comprises the following steps:
step 1, arranging a substrate;
step 2, depositing a lower cladding on the substrate;
step 3, depositing a waveguide layer on the lower cladding layer and then etching the core layer;
and 4, depositing an upper cladding layer on the core layer to provide optical insulation.
7. The method according to claim 6, wherein step 3 comprises: providing a first wide waveguide and a second wide waveguide, the first wide waveguide and the second wide waveguide transmitting a high order mode and a low order mode; the narrow waveguide is arranged to transmit low order modes.
8. The method of claim 6, wherein the first tapered waveguide enables low loss transmission of lower order modes and directs higher order modes to the functional region, and the second tapered waveguide directs higher order modes from the functional region to the second wide waveguide.
9. The method according to claim 6, wherein the step 3 comprises:
step 31, performing Electron Beam Lithography (EBL), namely putting a photoresist sample wafer which is subjected to spin coating into an EBL equipment cabin, moving the sample wafer to a preset scanning position, scanning the photoresist sample wafer to form an optimized core layer pattern, automatically scanning according to the specified core layer pattern after aligning the focus of an electron gun, wherein the acceleration voltage of a processed electron beam is 20KV, the beam current is 120pA, and taking out the wafer from the EBL equipment cabin after directly writing the structure;
and 32, developing, namely putting the photoetched sample wafer into a mixed solution of methyl isobutyl ketone (MIBK) and IPA at room temperature, wherein the molar ratio is MIBK: IPA 1: developing for 35 seconds, fixing in IPA solution for 50 seconds, developing to obtain a sample wafer with a core layer pattern photoetched by electron beam lithography, baking at 60 deg.C for 5 minutes and 90 deg.C for 10 minutes;
and 33, etching the sample wafer, and etching the developed sample wafer by using an ICP etching machine, wherein the source power of the ICP etching machine is 80W, the etching time is about 1 minute and 40 seconds, and the etching gas is SF 4 And C 4 F 8 The gas flow is respectively 10sccm and 15sccm, and the etching depth is 220 nm;
and step 34, washing away residual glue, namely, remaining some electron beam exposure glue PMMA on the etched core layer, respectively carrying out ultrasonic cleaning for 10 minutes by using acetone, ketone, isopropyl alcohol and deionized water, and drying the sample wafer by using a nitrogen gun after the cleaning is finished.
10. The method of claim 6, wherein: the lower cladding is 3 μm SiO 2 。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116224498A (en) * | 2023-05-09 | 2023-06-06 | 之江实验室 | On-chip switch, forming method thereof and optical communication element |
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