CN117552103A - Method for reducing memory effect of nitrogen residue in semiconductor epitaxy and nitrogen adsorption device - Google Patents

Method for reducing memory effect of nitrogen residue in semiconductor epitaxy and nitrogen adsorption device Download PDF

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CN117552103A
CN117552103A CN202311417983.4A CN202311417983A CN117552103A CN 117552103 A CN117552103 A CN 117552103A CN 202311417983 A CN202311417983 A CN 202311417983A CN 117552103 A CN117552103 A CN 117552103A
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nitrogen
nitrogen adsorption
growth chamber
adsorption device
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吕立平
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Hico Semiconductor Technology Suzhou Co ltd
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Hico Semiconductor Technology Suzhou Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
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  • General Chemical & Material Sciences (AREA)
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Abstract

The invention relates to a method for reducing memory effect of nitrogen residue in semiconductor epitaxy and a nitrogen adsorption device. The method for reducing the memory effect of nitrogen residues in the semiconductor epitaxy comprises the following steps: step one, providing a growth chamber, a plurality of semiconductor substrates and a nitrogen adsorption device; step two, the semiconductor substrate carries out epitaxial growth in the growth chamber, nitrogen is adopted as a doping source for doping, an epitaxial wafer is moved out of the growth chamber after the epitaxial growth is finished, and nitrogen remains in the growth chamber; step three, moving the nitrogen adsorption device into a growth chamber, adsorbing residual nitrogen in the growth chamber by adopting the nitrogen adsorption device, and moving the nitrogen adsorption device out of the growth chamber after full adsorption; and step four, moving the semiconductor substrate in the step one into a growth cavity, and repeating the step two and the step three. The method can reduce N-type memory effect caused by nitrogen residue in the semiconductor epitaxial process.

Description

Method for reducing memory effect of nitrogen residue in semiconductor epitaxy and nitrogen adsorption device
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for reducing memory effect of nitrogen residues in semiconductor epitaxy and a nitrogen adsorption device.
Background
In halfSilicon carbide (SiC) materials are widely used in the conductor industry for the manufacture of high power, high temperature and high frequency electronic devices. Epitaxial growth is a common method of preparing silicon carbide materials, with CVD (chemical vapor deposition) epitaxy being one of the most common techniques. In the process of N-type silicon carbide epitaxy, N 2 The gas is used as a doping source to adjust the electrical properties of the epitaxial wafer. After the epitaxy is finished, part of doping gas remains in the cavity, so that the doping concentration of the subsequent epitaxial wafer is higher under the same process parameters, which is called an N-type memory effect.
Currently, in order to reduce N-type memory effect and reduce nitrogen residue in epitaxial wafers, it is conventional practice to remove residual dopant gas by introducing an additional cleaning step during the epitaxial growth process or to remove nitrogen in the chamber by using a vacuum pumping mode. However, there are some problems or limitations in the prior art. First, by introducing additional washing steps, the complexity and time costs of the manufacturing process are increased. Secondly, the removal of nitrogen by means of vacuum may cause turbulence in the cavity, resulting in scattering and splashing of polycrystalline silicon carbide particles, thereby causing a subsequent epitaxial wafer to grow out of the defect, which is a fatal defect of the epitaxial wafer, resulting in unacceptable loss of production.
Therefore, there is a need to develop a more efficient method to reduce nitrogen residues, improve the quality and performance of semiconductor epitaxial wafers, and increase the reliability and stability of electronic devices.
Disclosure of Invention
Based on this, it is necessary to provide a method and a nitrogen adsorption device for reducing the memory effect of nitrogen residues in semiconductor epitaxy, aiming at the problem of how to reduce nitrogen residues in semiconductor epitaxy.
A method for reducing memory effects of nitrogen residues in semiconductor epitaxy comprising the steps of:
step one, providing a growth chamber, a plurality of semiconductor substrates and a nitrogen adsorption device;
step two, the semiconductor substrate is subjected to epitaxial growth in the growth chamber, nitrogen is adopted as a doping source for doping, an epitaxial wafer is moved out of the growth chamber after the epitaxial growth is finished, and nitrogen remains in the growth chamber;
step three, the nitrogen adsorption device is moved into the growth chamber, nitrogen remained in the growth chamber is adsorbed by the nitrogen adsorption device, and the nitrogen adsorption device is moved out of the growth chamber after full adsorption; and
and step four, moving the semiconductor substrate in the step one into the growth cavity, and repeating the step two and the step three.
By applying the method for reducing the memory effect of the nitrogen residue in the semiconductor epitaxy, the nitrogen residue in the growth chamber can be adsorbed through the nitrogen adsorption device, so that the nitrogen residue in the semiconductor epitaxy is fully reduced, the N-type memory effect caused by the nitrogen residue in the semiconductor epitaxy process is further reduced, the quality and performance of an epitaxial wafer are improved, the reliability and stability of an electronic device are improved, and the method is favorable for wide application.
In one possible implementation manner, in the third step, in the operation of adsorbing the nitrogen gas remaining in the growth chamber by using the nitrogen adsorption device, the temperature of the growth chamber is 1000-1100 ℃.
In one possible implementation manner, in the third step, in the operation of adsorbing the nitrogen remaining in the growth chamber by using the nitrogen adsorption device, the carrier gas flow rate of the growth chamber is 150 SLM-180 SLM, and the adsorption time is 10 min-15 min.
In one possible implementation, the nitrogen adsorption device includes a main body and nitrogen adsorption particles supported on the main body, and the main body has a plurality of holes inside.
In one possible implementation manner, the main body is cylindrical, and the main body is made of graphite, carbon or molybdenum;
the holes in the main body are honeycomb-shaped; or the main body comprises a plurality of unit cells which are arranged in a lattice structure, and the holes inside the unit cells are formed by penetrating cylinders in three directions of xyz;
the holes in the main body account for 40-60% of the volume of the main body.
In one possible implementation, the nitrogen adsorption device further comprises a coating layer on the surface of the main body, and the nitrogen adsorption particles are embedded on the coating layer;
the coating is made of silicon carbide or tantalum carbide, and the thickness of the coating is 50-100 mu m;
the nitrogen adsorption particles are made of at least one of tantalum, titanium, tantalum oxide, titanium oxide and aluminum oxide, and the size of the nitrogen adsorption particles is 50-200 mu m;
the nitrogen adsorption particles account for 20-40% of the coating by mass.
The utility model provides a nitrogen adsorption equipment for reduce nitrogen remains in the semiconductor epitaxy, nitrogen adsorption equipment includes main part and load in nitrogen adsorption granule on the main part, the inside of main part has a plurality of holes.
By applying the nitrogen adsorption device disclosed by the technical scheme of the invention, the nitrogen remained in the growth chamber can be adsorbed after the semiconductor epitaxy growth, so that the nitrogen remained in the semiconductor epitaxy is sufficiently reduced, the N-type memory effect caused by the nitrogen remained in the semiconductor epitaxy process is further reduced, the quality and performance of an epitaxial wafer are improved, the reliability and stability of an electronic device are improved, and the nitrogen adsorption device is favorable for wide application.
In one possible implementation manner, the main body is cylindrical, and the main body is made of graphite, carbon or molybdenum;
the holes in the main body are honeycomb-shaped; or the main body comprises a plurality of unit cells which are arranged in a lattice structure, and the holes inside the unit cells are formed by penetrating cylinders in three directions of xyz;
the holes in the main body account for 40-60% of the volume of the main body.
In one possible implementation, the nitrogen adsorption device further comprises a coating layer on the surface of the body, and the nitrogen adsorption particles are embedded on the coating layer.
In one possible implementation, the material of the coating is silicon carbide or tantalum carbide, and the thickness of the coating is 50-100 μm;
the nitrogen adsorption particles are made of at least one of tantalum, titanium, tantalum oxide, titanium oxide and aluminum oxide, and the size of the nitrogen adsorption particles is 50-200 mu m;
the nitrogen adsorption particles account for 20-40% of the coating by mass.
Drawings
FIG. 1 is a flow chart of a method for reducing memory effects of nitrogen residues in semiconductor epitaxy according to an embodiment of the invention;
FIG. 2 is a schematic perspective view of a nitrogen adsorption apparatus according to an embodiment of the present invention;
FIG. 3 is a front view of a nitrogen adsorption apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view taken along line A-A of FIG. 3;
FIG. 5 is a schematic diagram of a unit cell of a nitrogen adsorption unit according to an embodiment of the invention;
fig. 6 is a graph of doping concentration between heats during epitaxial growth of example 1 and comparative example 1.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the invention, whereby the invention is not limited to the specific embodiments disclosed below.
It will be understood that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1, a method for reducing memory effect of nitrogen residue in semiconductor epitaxy according to an embodiment of the invention includes the following steps:
s10: step one, a growth chamber, a plurality of semiconductor substrates and a nitrogen adsorption device are provided.
Wherein the growth chamber is an epitaxial growth chamber; the semiconductor substrate may be N-type silicon carbide, the size of which may be, for example, 4 to 8 inches, and the inclination angle of which may be, for example, 1 to 8 °.
The nitrogen adsorption device is used for adsorbing nitrogen remained in the growth chamber, and the specific form of the nitrogen adsorption device is not limited in the invention.
Further, referring to fig. 2 to 5, a nitrogen adsorption apparatus 100 according to one possible embodiment includes a main body 110 and nitrogen adsorption particles supported on the main body 110, wherein a plurality of holes 120 are formed in the main body 110. The nitrogen adsorption particles may be supported on the body 110 in any form, for example, may be directly embedded in the body 110 or may be supported on the body 110 through other carriers. Wherein the holes 120 can increase the surface area of adsorption, thereby improving the efficiency of adsorption of nitrogen.
In the nitrogen adsorption apparatus 100 of the present invention, nitrogen adsorption particles for adsorbing nitrogen remaining in the growth chamber may be any particles capable of adsorbing nitrogen, and preferably a material having high adsorption efficiency and high nitrogen adsorption capacity.
By the adsorption of the nitrogen adsorption device 100, the residual doping gas can be eliminated as much as possible, and the N-type memory effect caused by the residual nitrogen in the CVD epitaxial process can be further reduced.
In the foregoing embodiment, the main body 110 has a cylindrical shape, and the main body 110 is made of graphite, carbon, or molybdenum. Wherein, graphite, carbon or molybdenum are all high-purity materials, so that other impurities are avoided being introduced. The material of the main body 110 is preferably isostatic graphite, and the isostatic graphite has a high temperature resistant effect, can bear a high temperature of thousands of degrees, has small deformation under a high temperature condition, is not easy to crack, and can avoid stress damage.
Based on the foregoing embodiment, the main body 110 includes a plurality of unit cells 130 arranged in a lattice structure, and the holes 120 inside the single unit cell 130 are formed by penetrating cylinders in three directions of xyz, as shown in fig. 5. After the unit cells 130 are arranged in a lattice structure, the outer shape of the main body 110 is processed into a cylindrical shape or the like as required. The structure has the advantages of having a large specific surface area, being convenient to process and improving the nitrogen adsorption efficiency. Of course, in the nitrogen adsorption apparatus of the present invention, the shape of the hole 120 inside the main body 110 is not limited thereto, and may be any other possible shape. For example, the holes 120 inside the body 110 may also be honeycomb-shaped. The honeycomb-shaped holes 120 can increase the adsorption surface area and can improve the efficiency of adsorbing nitrogen.
Based on the foregoing embodiment, the holes 120 in the main body 110 account for 40% to 60% of the volume of the main body 110. At this time, the surface area of the hole 120 for adsorbing nitrogen is large, so that the efficiency of adsorbing nitrogen can be improved and the time for adsorbing nitrogen can be shortened.
In addition to the foregoing embodiments, the nitrogen adsorption apparatus 100 further includes a coating layer on the surface of the body 110, and nitrogen adsorption particles are embedded in the coating layer. Wherein at least a portion of the nitrogen-adsorbing particles are exposed to nitrogen gas. The coating is a non-compact coating, and can expose as much nitrogen adsorption particles as possible to nitrogen so as to fully play the role of nitrogen adsorption of the nitrogen adsorption particles.
In the above embodiment, the coating layer is made of silicon carbide or tantalum carbide, and the thickness of the coating layer is 50 μm to 100 μm. The coating of the two materials has the function of high temperature resistance, can bear the high temperature of more than one thousand degrees, has small deformation under the high temperature condition and is not easy to crack.
In the above embodiment, the nitrogen-adsorbing particles are made of at least one material selected from the group consisting of tantalum, titanium, tantalum oxide, titanium oxide and aluminum oxide, and the size of the nitrogen-adsorbing particles is 50 μm to 200 μm. When the nitrogen adsorption particles are made of two or more materials selected from tantalum, titanium, tantalum oxide, titanium oxide and aluminum oxide, the nitrogen adsorption particles are made of a combination of the two or more materials.
Based on the previous embodiment, the nitrogen adsorption particles account for 20-40% of the coating by mass.
S20: and step two, performing epitaxial growth on the semiconductor substrate in the growth chamber, doping by adopting nitrogen as a doping source, and removing the epitaxial wafer out of the growth chamber after the epitaxial growth is finished, wherein nitrogen remains in the growth chamber.
The semiconductor substrate may be placed on a graphite growth apparatus and the incoming growth chamber epitaxially grown using process conditions common to those of epitaxial growth in the art. In the epitaxial growth process, the pressure of the reaction cavity can be 100-200 mbar, and the source gas can be TCS or C 2 H 4 The flow rate of the source gas is not limited; the doping gas used is N 2 ，N 2 The flow rate of (2) can be 50 SCCM-200 SCCM; the carrier gas introduced into the cavity is H 2 The flow rate of the carrier gas can be 80 SLM-100 SLM; the epitaxial growth temperature may be 1550-1650 degrees celsius.
After the epitaxial growth is finished, the temperature of the growth chamber is reduced to 900 ℃ or below, and then the epitaxial wafer is moved out of the growth chamber by using a manipulator.
S30: and step three, moving the nitrogen adsorption device into the growth chamber, adsorbing residual nitrogen in the growth chamber by adopting the nitrogen adsorption device, and moving the nitrogen adsorption device out of the growth chamber after full adsorption.
In the third step, the nitrogen adsorption device can fully contact and adsorb residual doping gas in the growth chamber through the installation and adjustment of the nitrogen adsorption device. The nitrogen adsorption device may be designed to be disposed within the growth chamber so as to be able to efficiently adsorb nitrogen.
In one possible embodiment, in the third step, in the operation of adsorbing the nitrogen gas remaining in the growth chamber by using the nitrogen adsorption device, the temperature of the growth chamber is 1000 to 1100 ℃. The high temperature at this time may make the nitrogen more active so that the nitrogen adsorbed on the surface of the growth chamber is evolved more.
In a possible embodiment, in the third step, in the operation of adsorbing the nitrogen remaining in the growth chamber by using the nitrogen adsorption device, the carrier gas flow rate of the growth chamber is 150SLM to 180SLM, and the adsorption time is 10 minutes to 15 minutes.
The specific operation of the third step can be as follows: and (3) moving the nitrogen adsorption device into the growth chamber, placing the nitrogen adsorption device on the carrier disc, increasing the carrier gas flow rate of the growth chamber to 150-180 SLM, increasing the temperature of the growth chamber to 1000-1100 ℃, starting the circulating gas of the carrier disc, starting the adsorption operation, and removing the nitrogen adsorption device from the growth chamber after 10-15 minutes of adsorption. Through the third step, at least part of the residual nitrogen gas can be adsorbed into the nitrogen adsorption device.
S40: and step four, moving the semiconductor substrate in the step one into a growth cavity, and repeating the step two and the step three.
And step four, repeating the operation of the step four according to the number of the semiconductor substrates to be epitaxially grown, namely the new semiconductor substrates to be epitaxially grown, until the epitaxial growth of a plurality of silicon carbide substrates is completed.
By applying the method for reducing the memory effect of the nitrogen residue in the semiconductor epitaxy, the nitrogen residue in the growth chamber can be adsorbed through the nitrogen adsorption device, so that the nitrogen residue in the semiconductor epitaxy is fully reduced, the N-type memory effect caused by the nitrogen residue in the semiconductor epitaxy process is further reduced, the quality and performance of an epitaxial wafer are improved, the reliability and stability of an electronic device are improved, and the method is favorable for wide application.
Further, compared with the prior art that the doping gas is removed by means of vacuumizing, the nitrogen adsorption device does not cause turbulence in the growth cavity, and the problem that the defect of falling objects in the subsequent epitaxial wafer growth is increased due to scattered splashing of polycrystalline silicon carbide particles is avoided. Therefore, the invention can reduce nitrogen residue while maintaining the quality of the epitaxial wafer, avoid production defects and improve production efficiency.
Referring to fig. 2 to 5, a nitrogen adsorption apparatus 100 according to an embodiment of the present invention includes a main body 110 and nitrogen adsorption particles supported on the main body 110, wherein a plurality of holes 120 are formed in the main body 110. The nitrogen adsorption particles may be supported on the body 110 in any form, for example, may be directly embedded in the body 110 or may be supported on the body 110 through other carriers. Wherein the holes 120 can increase the surface area of adsorption, thereby improving the efficiency of adsorption of nitrogen.
In the nitrogen adsorption apparatus 100 of the present invention, nitrogen adsorption particles for adsorbing nitrogen remaining in the growth chamber may be any particles capable of adsorbing nitrogen, and preferably a material having high adsorption efficiency and high nitrogen adsorption capacity.
By the adsorption of the nitrogen adsorption device 100, the residual doping gas can be eliminated as much as possible, and the N-type memory effect caused by the residual nitrogen in the CVD epitaxial process can be further reduced.
In the foregoing embodiment, the main body 110 has a cylindrical shape, and the main body 110 is made of graphite, carbon, or molybdenum. Wherein, graphite, carbon or molybdenum are all high-purity materials, so that other impurities are avoided being introduced. The material of the main body 110 is preferably isostatic graphite, and the isostatic graphite has a high temperature resistant effect, can bear a high temperature of thousands of degrees, has small deformation under a high temperature condition, is not easy to crack, and can avoid stress damage.
Based on the foregoing embodiment, the main body 110 includes a plurality of unit cells 130 arranged in a lattice structure, and the holes 120 inside the single unit cell 130 are formed by penetrating cylinders in three directions of xyz, as shown in fig. 5. After the unit cells 130 are arranged in a lattice structure, the outer shape of the main body 110 is processed into a cylindrical shape or the like as required. The structure has the advantages of having a large specific surface area, being convenient to process and improving the nitrogen adsorption efficiency. Of course, in the nitrogen adsorption apparatus of the present invention, the shape of the hole 120 inside the main body 110 is not limited thereto, and may be any other possible shape. For example, the holes 120 inside the body 110 are honeycomb-shaped. The honeycomb-shaped holes 120 can increase the adsorption surface area and can improve the efficiency of adsorbing nitrogen.
Based on the foregoing embodiment, the holes 120 in the main body 110 account for 40% to 60% of the volume of the main body 110. At this time, the surface area of the hole 120 for adsorbing nitrogen is large, so that the efficiency of adsorbing nitrogen can be improved and the time for adsorbing nitrogen can be shortened.
In addition to the foregoing embodiments, the nitrogen adsorption apparatus 100 further includes a coating layer on the surface of the body 110, and nitrogen adsorption particles are embedded in the coating layer. Wherein at least a portion of the nitrogen-adsorbing particles are exposed to nitrogen gas. The coating is a non-compact coating, and can expose as much nitrogen adsorption particles as possible to nitrogen so as to fully play the role of nitrogen adsorption of the nitrogen adsorption particles.
In the above embodiment, the coating layer is made of silicon carbide or tantalum carbide, and the thickness of the coating layer is 50 μm to 100 μm. The coating of the two materials has the function of high temperature resistance, can bear the high temperature of more than one thousand degrees, has small deformation under the high temperature condition and is not easy to crack.
In the above embodiment, the nitrogen-adsorbing particles are made of at least one material selected from the group consisting of tantalum, titanium, tantalum oxide, titanium oxide and aluminum oxide, and the size of the nitrogen-adsorbing particles is 50 μm to 200 μm. When the nitrogen adsorption particles are made of two or more materials selected from tantalum, titanium, tantalum oxide, titanium oxide and aluminum oxide, the nitrogen adsorption particles are made of a combination of the two or more materials.
Based on the previous embodiment, the nitrogen adsorption particles account for 20-40% of the coating by mass.
By applying the nitrogen adsorption device disclosed by the technical scheme of the invention, the nitrogen remained in the growth chamber can be adsorbed after the semiconductor epitaxy growth, so that the nitrogen remained in the semiconductor epitaxy is sufficiently reduced, the N-type memory effect caused by the nitrogen remained in the semiconductor epitaxy process is further reduced, the quality and performance of an epitaxial wafer are improved, the reliability and stability of an electronic device are improved, and the nitrogen adsorption device is favorable for wide application.
With reference to the foregoing embodiments, the technical solutions of the present invention will be described by way of example, but it should be noted that the present invention is not limited to the following embodiment 1.
Example 1
Step one, providing a growth chamber, a plurality of silicon carbide substrates and a nitrogen adsorption device as shown in fig. 2-5. Wherein the size of the silicon carbide substrate is 6 inches and the inclination angle of the silicon carbide substrate is 4 degrees.
And secondly, placing the silicon carbide substrate on a graphite growth device, and transferring the silicon carbide substrate into a growth chamber for epitaxial growth. In the epitaxial growth process, the pressure of the reaction cavity is 100mbar, and the source gases are TCS and C 2 H 4 The method comprises the steps of carrying out a first treatment on the surface of the The doping gas used is N 2 ，N 2 Is 180SCCM; the carrier gas introduced into the cavity is H 2 The flow rate of the carrier gas is 100SLM; the epitaxial growth temperature is 1590 ℃. And after the epitaxial growth is finished, the temperature of the cavity is reduced to 900 ℃, the silicon carbide wafer is transferred out of the growth cavity by using a mechanical arm, and nitrogen remains in the growth cavity.
Step three, transferring the nitrogen adsorption device into a growth chamber in a growth interval, placing the nitrogen adsorption device on a carrier disc, increasing the carrier gas flow of the growth chamber to 150SLM, increasing the temperature of the growth chamber to 1600 ℃, starting the circulating gas of the carrier disc, starting adsorption operation, and removing the nitrogen adsorption device from the growth chamber after 20 minutes of adsorption.
And step four, moving a new semiconductor substrate into the growth chamber, and repeating the step two and the step three. Repeating the operation of the step four until the epitaxial growth of a plurality of silicon carbide substrates is completed.
Comparative example 1
The present comparative example differs from example 1 only in that step three was not included.
Performance test:
doping concentrations between heats during epitaxial growth of example 1 and comparative example 1 were tested to obtain fig. 6. As can be seen from fig. 6, compared with the semiconductor epitaxy before the nitrogen adsorption device is used in comparative example 1, the nitrogen adsorption device is used to adsorb the nitrogen remaining in the growth chamber after each batch of semiconductor epitaxy in example 1 of the present invention, and the variation of the doping concentration between the heat and the heat is significantly reduced, which indicates that the memory effect of reducing the nitrogen remaining in the semiconductor epitaxy can sufficiently reduce the nitrogen remaining in the semiconductor epitaxy by adopting the method of the present invention.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.

Claims (10)

1. A method for reducing the memory effect of nitrogen residues in semiconductor epitaxy comprising the steps of:
step one, providing a growth chamber, a plurality of semiconductor substrates and a nitrogen adsorption device;
step two, the semiconductor substrate is subjected to epitaxial growth in the growth chamber, nitrogen is adopted as a doping source for doping, an epitaxial wafer is moved out of the growth chamber after the epitaxial growth is finished, and nitrogen remains in the growth chamber;
step three, the nitrogen adsorption device is moved into the growth chamber, nitrogen remained in the growth chamber is adsorbed by the nitrogen adsorption device, and the nitrogen adsorption device is moved out of the growth chamber after full adsorption; and
and step four, moving the semiconductor substrate in the step one into the growth cavity, and repeating the step two and the step three.
2. The method of reducing memory effects of nitrogen residues in semiconductor epitaxy as recited in claim 1, wherein in step three, the temperature of the growth chamber is 1000-1100 ℃ during the operation of adsorbing nitrogen residues in the growth chamber by the nitrogen adsorption device.
3. The method for reducing memory effect of nitrogen residues in semiconductor epitaxy according to claim 1, wherein in the step three, in the operation of adsorbing nitrogen residues in the growth chamber by using the nitrogen adsorption device, the carrier gas flow rate of the growth chamber is 150 SLM-180 SLM, and the adsorption time is 10 min-15 min.
4. The method of reducing memory effects of nitrogen residues in semiconductor epitaxy as recited in claim 1, wherein said nitrogen adsorption device comprises a body and nitrogen adsorption particles supported on said body, said body having a plurality of holes therein.
5. The method of reducing memory effects of nitrogen residues in semiconductor epitaxy as recited in claim 4, wherein said body is cylindrical and is made of graphite, carbon or molybdenum;
the holes in the main body are honeycomb-shaped; or the main body comprises a plurality of unit cells which are arranged in a lattice structure, and the holes inside the unit cells are formed by penetrating cylinders in three directions of xyz;
the holes in the main body account for 40-60% of the volume of the main body.
6. The method of reducing memory effects of nitrogen residues in a semiconductor epitaxial layer of claim 4, wherein said nitrogen adsorption device further comprises a coating layer on a surface of said body, said nitrogen adsorption particles being embedded on said coating layer;
the coating is made of silicon carbide or tantalum carbide, and the thickness of the coating is 50-100 mu m;
the nitrogen adsorption particles are made of at least one of tantalum, titanium, tantalum oxide, titanium oxide and aluminum oxide, and the size of the nitrogen adsorption particles is 50-200 mu m;
the nitrogen adsorption particles account for 20-40% of the coating by mass.
7. The nitrogen adsorption device is used for reducing nitrogen residues in semiconductor epitaxy and is characterized by comprising a main body and nitrogen adsorption particles loaded on the main body, wherein a plurality of holes are formed in the main body.
8. The nitrogen adsorption device of claim 7, wherein the body is cylindrical, and the body is made of graphite, carbon or molybdenum;
the holes in the main body are honeycomb-shaped; or the main body comprises a plurality of unit cells which are arranged in a lattice structure, and the holes inside the unit cells are formed by penetrating cylinders in three directions of xyz;
the holes in the main body account for 40-60% of the volume of the main body.
9. The nitrogen adsorption device of claim 7, further comprising a coating on a surface of said body, said nitrogen adsorption particles being embedded on said coating.
10. The nitrogen adsorption device according to claim 9, wherein the coating is made of silicon carbide or tantalum carbide, and the thickness of the coating is 50-100 μm;
the nitrogen adsorption particles are made of at least one of tantalum, titanium, tantalum oxide, titanium oxide and aluminum oxide, and the size of the nitrogen adsorption particles is 50-200 mu m;
the nitrogen adsorption particles account for 20-40% of the coating by mass.
CN202311417983.4A 2023-10-30 2023-10-30 Method for reducing memory effect of nitrogen residue in semiconductor epitaxy and nitrogen adsorption device Pending CN117552103A (en)

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