CN1175499C - Nano multicrystal biofilm photoelectric cell and its manufacturing method - Google Patents
Nano multicrystal biofilm photoelectric cell and its manufacturing method Download PDFInfo
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- CN1175499C CN1175499C CNB011366818A CN01136681A CN1175499C CN 1175499 C CN1175499 C CN 1175499C CN B011366818 A CNB011366818 A CN B011366818A CN 01136681 A CN01136681 A CN 01136681A CN 1175499 C CN1175499 C CN 1175499C
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 229910052737 gold Inorganic materials 0.000 claims abstract description 7
- 229920003023 plastic Polymers 0.000 claims abstract description 7
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 7
- 229910052709 silver Inorganic materials 0.000 claims abstract description 7
- 239000000839 emulsion Substances 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 36
- 210000004027 cell Anatomy 0.000 claims description 15
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 239000004816 latex Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 210000002377 thylakoid Anatomy 0.000 claims description 6
- 239000003086 colorant Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- 239000007800 oxidant agent Substances 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000975 dye Substances 0.000 claims description 4
- 229920000126 latex Polymers 0.000 claims description 4
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims 3
- 206010070834 Sensitisation Diseases 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 239000013528 metallic particle Substances 0.000 claims 1
- 230000008313 sensitization Effects 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
- 239000002985 plastic film Substances 0.000 abstract description 2
- 239000012190 activator Substances 0.000 abstract 1
- 238000007650 screen-printing Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000049 pigment Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229930002875 chlorophyll Natural products 0.000 description 2
- 235000019804 chlorophyll Nutrition 0.000 description 2
- ATNHDLDRLWWWCB-AENOIHSZSA-M chlorophyll a Chemical compound C1([C@@H](C(=O)OC)C(=O)C2=C3C)=C2N2C3=CC(C(CC)=C3C)=[N+]4C3=CC3=C(C=C)C(C)=C5N3[Mg-2]42[N+]2=C1[C@@H](CCC(=O)OC\C=C(/C)CCC[C@H](C)CCC[C@H](C)CCCC(C)C)[C@H](C)C2=C5 ATNHDLDRLWWWCB-AENOIHSZSA-M 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 150000001720 carbohydrates Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 210000003763 chloroplast Anatomy 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002773 nucleotide Substances 0.000 description 1
- 125000003729 nucleotide group Chemical group 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/761—Biomolecules or bio-macromolecules, e.g. proteins, chlorophyl, lipids or enzymes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Hybrid Cells (AREA)
Abstract
The present invention discloses a nano multicrystal biofilm photovoltaic cell and a manufacture method thereof. The present invention is designed for solving the problem of high production and operating cost of the existing solar photovoltaic cell. The photovoltaic cell is provided with a transparent plastic film cover layer (1), a SnO#-[2] conducting film layer (2), a semiconductor film (3), an Ag, Au and Pt conducting film (4), a SnO#-[2] conducting film (5) and a thin plate cushion layer (6) from top to bottom, where, the semiconductor film (3) is composed of organic or inorganic light-sensitive dye, semiconductor films of ZnO, ZnS, Nb#-[2]O#-[2], or TiO#-[2], etc., and emulsion reduction activator, and is provided with a cavity. The photovoltaic cell has the manufacture steps: conducting solution is sprayed on the conducting film cushion layer, and is dried in a vacuum way; (2) emulsion films of ZnO and ZnS are coated by a silk screen printing method, and is dried in the vacuum way; (3) the dried product in the second step is arranged in organic or inorganic light-sensitive dye, and is dried after immersed; (4) the conducting surface of the product in the third step is added with the transparent plastic thin layer, and the edge part is bonded. The photovoltaic cell can be applied to various power utilization places.
Description
Technical field:
The present invention relates to a kind of solar cell and preparation method thereof, particularly a kind of nano material bio-film photovoltaic cell and preparation method thereof.
Background technology:
Solar cell is very fast in development in recent years, has obtained application in certain field, but its production and application cost are higher, and it can't large-scale popularization be used.
Summary of the invention:
The object of the present invention is to provide a kind of production and the lower nano-polycrystalline bio-film photovoltaic cell of application cost, and its manufacture method is provided.
For achieving the above object, nano-polycrystalline bio-film photovoltaic cell provided by the invention has following structure: it is made up of layered structure, and structure from top to bottom is:
1. light-passing plastic membrane cover layer,
2. SnO
2Conductive film layer,
3. organic or inorganic light-sensitive coloring agent, ZnO, ZnS, Nb
2O
2Or TiO
2The semiconductor film that semiconductive thin film and emulsion state reductant-oxidant are self-assembled into hole,
4. the conducting film made of Ag, Au or Pt,
5. SnO
2Conductive film layer,
6. thin plate bed course.
The present invention also provides the manufacture method of nano-polycrystalline bio-film photovoltaic cell, and it adopts following steps to make:
A cleans and dries up with magnetron sputtering method and makes SnO thereon
2The light-passing plastic membrane cover layer of conducting film;
B cleans and dries up with magnetron sputtering method and makes SnO thereon
2The thin plate bed course of conducting film;
C sprays Ag, Au or Pt conducting solution with High Pressure Gun and dries up on clean thin plate bed course conducting surface;
D is put into C step product in the vacuum baking oven and dries;
E coats ZnO, ZnS, TiO with silk screen print method on D step product
2Or Nb
2O
2Latex film also dries up;
F will go up the step product and be put in the vacuum baking oven and dry;
After G put into the immersion of organic or inorganic light-sensitive coloring agent solution with F step product, taking-up dried up;
H coats the redox gel in the semiconductor aspect of G step product;
I coats the conducting surface frame of A step product and H step product ultraviolet glue and solidifies under uviol lamp and seals, and uses the conducting surface bonding electric wire of conducting resinl at A step product and H step product then, and at 120 ℃ of baking knots.
Description of drawings:
Fig. 1 is Fermi level and nano-multicrystal thin film photocell fundamental diagram
Among the figure 1.---5. workflow e
----sense of current hv---luminous energy
S---the sensitising agent of light S+---sensitising agent S* of oxidation---output electronics
R/R
----redox couple E---energy Δ v---energy level
Fig. 2 is the structure chart of nano-polycrystalline bio-film photovoltaic cell
Fig. 3 is the E partial enlarged drawing that nano-multicrystal thing shown in Figure 2 is given birth to thin film photocell
21 is dyestuff and semiconductor latex film among Fig. 3, and 22 is electrolyte and redox duplet D/D+
Fig. 4 is the chloroplast structure schematic diagram
11 is the chloroplaset crust among Fig. 4, and 12 is basal granule, and 13 is matrix, and 14 is thylakoid, and 15 is the pilum lamella, and 16 is hypothallus
Embodiment:
As follows as Fig. 2, this nano-polycrystalline bio-film photovoltaic cell structure shown in Figure 3: it is made up of layered structure, and structure from top to bottom is:
1, light-passing plastic film cap rock, its light transmittance be greater than 85%, anti-200 ℃ of high temperature;
2, the SnO that makes of magnetron sputtering method
2Conductive film layer, thickness 20 μ m, resistance is less than 10 Ω;
3, organic or inorganic dyestuffs such as Pd, Rh, Ru, ZnO, ZnS, Nb
2O
2Or TiO
2The semiconductor film with hole that semiconductive thin film and emulsion state reductant-oxidant are self-assembled into, thickness are 10-20 μ m;
4, the conducting film made such as Ag, Au or Pt, it is splendid to transmit Electronic Performance, thickness 10 μ m;
5, the SnO that makes of magnetron sputtering method
2Conductive film layer, thickness 20 μ m, resistance is less than 10 Ω;
6, the aluminium that can curl, copper or stainless sheet steel bed course, thick is 1mm.
Manufacture method to nano-polycrystalline bio-film photovoltaic cell is described further below, and it takes following steps to make:
A industry is cleaned and is dried up with magnetron sputtering method and makes SnO thereon
2The light-passing plastic membrane cover layer of conductive film layer, thickness 20 μ;
B industry is cleaned and is dried up with magnetron sputtering method and makes SnO thereon
2The aluminium of conductive film layer, copper, stainless sheet steel bed course, thickness 20 μ;
C sprays conducting solution such as Ag, Au, Pt and dries up with High Pressure Gun on clean thin plate bed course conducting surface, solution concentration is 10
-5M, a metal material is less than 30nm;
D is put C step product to the vacuum baking oven roasting to 350 ℃, and constant temperature 10 minutes, reduces to 100 ℃ of taking-ups;
E coats ZnO, ZnS, TiO with silk screen print method on D step product
2Or Nb
2O
2Deng latex film and dry up, latex concentration is 30mg/ml, and thickness 10-20 μ, particle diameter are less than 25nm, and the thick poor degree in surface is 100-300;
F is put E step product to vacuum furnace and is baked to 450 ℃, and constant temperature 30 minutes feeds nitrogen simultaneously, cools to 100 ℃ and removes;
G puts into organic or inorganic light-sensitive coloring agent solution with F step product and soaked 30 minutes, and the molten concentration of this liquid is 2 * 10
-4M, pH value are 3.5, and particle diameter is less than 20nm, and taking-up dries up then;
H coats the reductant-oxidant gel (as I in G step product semiconductor aspect (towards sunny side)
2-/ I
3-Or LiBr etc.);
I coats the conducting surface frame of A step product and H step product ultraviolet glue and solidifies under uviol lamp and seals, and uses the conducting surface bonding electric wire of conducting resinl at A step product and H step product then, and at 120 ℃ of baking knots.
Here it is to be noted especially the used inorganic or organic dyestuff of G step with the active material of thylakoid in the similar chloroplaset for well.As shown in Figure 4, pigment accounts for about 8% of chlorophyll dry weight, it is photoelectric carrier, 20-40% is lipid, the film that forms chloroplaset in the chlorophyll, the stored substance (carbohydrate) that 10-20% is arranged has 10% Mg, Fe, Mn, Cu, Zn, K, elements such as P, Ca, and they form the cluster ion of redox reaction in the optical effect, also have all kinds of nucleotides and quinone, they transmit electronics in photoelectric effect.From the composition of pigment as can be known, the element that participates in the photoelectric effect runaway electron in the pigment is more, so it can absorb extremely infrared luminous energy than broadband of near ultraviolet, thereby its photoelectric conversion rate is higher; (traditional photocell is only 1 to several semiconductor element, so its photocell transfer ratio is difficult for improving), as shown in Figure 4, the thylakoid that has the photoelectric effect function in the chloroplaset is formed the net of nano-sized carbon and derivative thereof with matrix, thylakoid is with the slabbing structure and change into the garden column, this shows that the mechanism height of catching photoelectricity is intensive, more effectively collect luminous energy, quicken photovoltaic reaction, this thylakoid belongs to the biological device of typical natural nano polycrystalline, with nanosecond science and technology art middle plateform printing oneself packaging technology surprising similarity is arranged.Adopt the nano-multicrystal biochemistry photocell natural daylight optoelectronic conversion ratio of above-mentioned technology higher, application cost is lower.
The present invention has following technique effect and innovation:
1, uses Fermi level effect, quantum effect, the field of nanosecond science and technology to cause new theories such as effect, interfacial effect and dimensional effect, used the self-assembling technique during nano material device is made on the manufacture method;
2, the every peak of photocell cost is watt below 0.5 dollar;
3, the photocell photoelectric conversion rate is greater than 10%;
4, performance is steady, and the life-span was greater than 15 years;
5, reductant-oxidant is cured, and has solved the difficult problem that liquid electrolyte leaks;
6, belong to dyssophotic all band photocell;
7, photocell top bottom and interlayer are the thin-film material that can curl, and can resist certain external force, are convenient to outdoor operation and maintenance.
Claims (5)
1, a kind of nano-polycrystalline bio-film photovoltaic cell, it is characterized in that: it is made up of layered structure, and structure from top to bottom is:
1. light-passing plastic membrane cover layer
2. SnO
2Conductive film layer
3. organic or inorganic light-sensitive coloring agent, ZnO, ZnS, Nb
2O
2Or TiO
2The semiconductor film that semiconductive thin film and emulsion state reductant-oxidant are self-assembled into hole
4. the conducting film made of Ag, Au or Pt
5. SnO
2Conductive film layer
6. thin plate bed course.
2, according to the described nano-polycrystalline bio-film photovoltaic cell of claim 1, it is characterized in that: described the 1. layer printing opacity greater than 85%, anti-200 ℃ of high temperature; The 2. thick 20 μ m of tunic, resistance is less than 10 Ω; The 3. layer comprise the organic or inorganic dyestuff of Pd, Rh, Ru sensitization; The 4. thick 10 μ m of tunic; The 5. thick 20 μ m of tunic, resistance is less than 10 Ω; The 6. a layer thin plate bed course make by aluminium, copper or corrosion resistant plate.
3, a kind of nano-polycrystalline bio-film photovoltaic cell manufacture method is characterized in that adopting following steps to make:
A cleans and dries up with magnetron sputtering method and makes SnO thereon
2The light-passing plastic membrane cover layer of conductive film layer;
B cleans and dries up with magnetron sputtering method and makes SnO thereon
2The thin plate bed course of conductive film layer;
C sprays Ag, Au or Pt conducting solution with High Pressure Gun and dries up on the clean thin plate bed course conducting surface that the B step obtains;
D is put into C step product in the vacuum baking oven and dries;
E coats ZnO, ZnS, TiO with silk screen print method on D step product
2Or Nb
2O
2Latex film also dries up;
F is put into E step product in the vacuum baking oven and dries;
After G put into the immersion of organic or inorganic light-sensitive coloring agent solution with F step product, taking-up dried up;
H coats the redox gel in the semiconductor aspect of G step product;
I coats the conducting surface frame of A step product and H step product ultraviolet glue and solidifies under uviol lamp and seals, and uses the conducting surface bonding electric wire of conducting resinl at A step product and H step product then, and at 120 ℃ of baking knots.
4, nano-polycrystalline bio-film photovoltaic cell manufacture method according to claim 3 is characterized in that:
The conductive plate bed course is made by aluminium, copper or stainless sheet steel in the B step;
Conducting solution concentration 10 in the C step
-5M, metallic particles is less than 30nm;
Roasting temperature is 350 ℃ in the D step, and constant temperature 10 minutes, is cooled to 100 ℃ of taking-ups;
Latex concentration is 30mg/ml in the E step, and thickness 10-20 μ m, particle diameter are less than 25nm, and surface roughness is 100-300;
Roasting temperature is 450 ℃ in the F step, and constant temperature 30 minutes feeds nitrogen simultaneously, cools to 100 ℃ of taking-ups;
Soaked 30 minutes in the G step, solution concentration is 2 * 10
-4M, pH value is 3.5, particle diameter is less than 20nm;
The redox gel comprises I in the H step
2-, I
3-Or LiBr.
5, according to claim 3 or 4 described nano-polycrystalline bio-film photovoltaic cell manufacture methods, it is characterized in that: the described organic photosensitive dyestuff of G step is a thylakoid in the chloroplaset.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011366818A CN1175499C (en) | 2001-10-26 | 2001-10-26 | Nano multicrystal biofilm photoelectric cell and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011366818A CN1175499C (en) | 2001-10-26 | 2001-10-26 | Nano multicrystal biofilm photoelectric cell and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1414641A CN1414641A (en) | 2003-04-30 |
| CN1175499C true CN1175499C (en) | 2004-11-10 |
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ID=4673824
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|---|---|---|---|
| CNB011366818A Expired - Fee Related CN1175499C (en) | 2001-10-26 | 2001-10-26 | Nano multicrystal biofilm photoelectric cell and its manufacturing method |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101266883B (en) * | 2008-04-11 | 2010-06-02 | 中山大学 | Grid electrode integrated double-side efficient light absorption dye sensitized solar battery |
| EP2226849B1 (en) * | 2008-10-16 | 2017-05-24 | Ruisong Xu | Nano-polycrystalline bio thin film photovoltaic cell |
| CN103198873A (en) * | 2012-01-04 | 2013-07-10 | 造能科技有限公司 | Transparent conducting thin film |
| CN103400892B (en) * | 2013-07-09 | 2016-05-25 | 山东建筑大学 | A kind of method of preparing zinc sulphide optoelectronic film |
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2001
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