CN102148098A - Method for preparing quantum dot sensitized oxide film with broad spectral response - Google Patents

Method for preparing quantum dot sensitized oxide film with broad spectral response Download PDF

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CN102148098A
CN102148098A CN2010106094606A CN201010609460A CN102148098A CN 102148098 A CN102148098 A CN 102148098A CN 2010106094606 A CN2010106094606 A CN 2010106094606A CN 201010609460 A CN201010609460 A CN 201010609460A CN 102148098 A CN102148098 A CN 102148098A
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quantum dot
oxide film
layer
dot sensitized
step
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丁旵明
周丽英
欧阳涛
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华东师范大学
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
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    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

The invention discloses a method for preparing a quantum dot sensitized oxide film with broad spectral response. The method comprises the following steps of: (1) depositing oxide on a transparent conductive substrate to obtain a first-layer porous oxide film by adopting electrophoretic deposition; (2) depositing a quantum dot sensitized material on the duct surface of the first-layer porous oxide film to obtain a first-layer quantum dot sensitized oxide film by adopting socking adsorption or electrophoretic deposition; (3) sequentially repeating the steps (1) and (2) on the first-layer quantum dot sensitized oxide film obtained in the step (2) to obtain a two-layer laminated quantum dot sensitized oxide film; and (4) sequentially repeating the steps (1) and (2) on the two-layer laminated quantum dot sensitized oxide film obtained in the step (3) to obtain a multi-layer laminated quantum dot sensitized oxide film, and repeating for a plurality of times to obtain the quantum dot sensitized oxide film with the broad spectral response. The quantum dot sensitized oxide film prepared by the invention mutually makes up the defect that respective absorption spectrum ranges are not wide enough, thus the range can be expanded to a near infrared region from an ultraviolet region after all the quantum dot spectrum absorption ranges are superimposed and the film has the broad spectral response.

Description

一种具有宽光谱响应的量子点敏化氧化物薄膜的制备方法 Quantum dot sensitized preparing an oxide thin film having a broad spectral response

技术领域 FIELD

[0001] 本发明涉及敏化太阳能电池技术领域,具体地说是一种具有宽光谱响应的量子点敏化氧化物薄膜的制备方法。 [0001] The present invention relates to a technical field sensitized solar cell, in particular a method for preparing a quantum dot having a broad spectral response sensitized oxide thin film.

背景技术 Background technique

[0002] 染料敏化太阳能电池是一种通过光电极将太阳能转换为电能或电能和化学能的光电转换器件。 [0002] The dye-sensitized solar cell is an extremely converting solar energy into electrical energy or chemical energy by photoelectric photoelectric conversion element. 目前最成功的是Gr??tzel型太阳能电池,即以染料敏化纳米氧化物薄膜为光阳极的太阳能光电池。 The most successful is Gr ?? tzel solar cell, i.e. the dye-sensitized solar cell of the oxide thin film photoanode. 其中用于制备光阳极的半导体材料有很多,如Ti02、Zn0、Nb205等, 但最常用的是Ti02。 Wherein the semiconductor materials used to make the anode have a lot of light, such as Ti02, Zn0, Nb205, etc., but the most common is Ti02. TiO2是一种价格便宜且应用广泛的材料,它的制备简单、无毒、稳定,且抗腐蚀性能好。 TiO2 is a cheap and widely used material, its preparation is simple, non-toxic, stable, and good corrosion resistance. 但由于其禁带宽度较大(金红石的带隙为3 ev,锐钛矿的带隙为3. 2 ev), 吸收范围都在紫外区,因此需要进行染料敏化,才能吸收可见光区的能量。 But because of its large band gap (band gap of rutile 3 ev, the bandgap of anatase 3. 2 ev), the range of absorption in the ultraviolet region, hence the need for a dye-sensitized, in order to absorb the energy of a visible light region .

[0003] 敏化剂是影响光电转换效率的关键因素,而不断提高光电转换效率是染料敏化太阳能电池发展的目标,因此染料敏化太阳能电池对敏化剂的要求非常高。 [0003] The sensitizer is a key factor affecting the photoelectric conversion efficiency, and photoelectric conversion efficiency is constantly certain dye-sensitized solar cell development, and thus dye-sensitized solar cell of claim sensitizer is very high. 目前用于敏化的大部分有机染料分子都可吸收可见光,但其吸收域比较窄,经历几千次乃至上万次循环之后性能大大降低,不能满足长时间工作对热稳定性的要求,因此使进一步提高光电转换效率受到限制。 Most currently used for sensitization of organic dye molecules may absorb visible light, but a relatively narrow absorption region, even after experiencing a few thousand million cycles significantly reduce the performance, can not meet the requirements of long working thermal stability, and therefore further improve the photoelectric conversion efficiency is limited. 随着半导体量子点制备技术的发展,利用低能隙的半导体量子点敏化T^2电极已成为光电极材料研究的热点。 With the development of semiconductor quantum dots prepared technique, low energy gap of semiconductor quantum dot sensitized T ^ 2 electrode has become a hot research photoelectrode material. 半导体量子点的优势在于制备方便、价格低廉、消光系数高、带隙可调、热稳定性好等。 Advantages of semiconductor quantum dots that convenient preparation, low cost, high extinction coefficient, a band gap is adjustable, and good thermal stability. 但以半导体量子点作为敏化剂,只有非常靠近TiO2表面的敏化剂才能把激发态的电子顺利地注入到TiA导带中,多层敏化剂的存在反而会阻碍电子的运输,导致转换效率下降,因此由于只能吸附一层量子点,受到单一量子点吸收光谱范围的限制,对太阳光的利用率仍然不高。 However, semiconductor quantum dots as a sensitizer, sensitizing agent only very close to the surface of the TiO2 electronically excited state TiA smoothly injected into the conduction band, but the presence of the sensitizer multilayer hinder the transport of electrons, resulting in a transition reduced efficiency, and therefore can only be due to the adsorption layer of quantum dots, quantum dot single limited absorption spectral range, the utilization of sunlight is still not high.

[0004] 为了提高对太阳光的利用率,有人提出将吸收光谱范围不同的不同粒径大小的同种量子点吸附在单层TiO2纳米管的管道里,使粒径较小的量子点吸收能量较高的太阳光, 粒径较大的量子点吸收能量较低的太阳光。 [0004] In order to improve the utilization of sunlight, it was suggested that the same kind of quantum dots will absorb different spectral range of different particle sizes of pipe monolayer adsorbed TiO2 nanotubes in the smaller particle size the quantum dots absorb energy higher sunlight, large particle size quantum dots absorb low energy of sunlight. 但这种方法由于不同粒径大小的量子点在被TiO2纳米管吸附过程中没有严格分区,当太阳光照射时,每种粒径的量子点在吸附了一定能量范围的太阳光后还会造成其他能量范围的太阳光的损失,因此对太阳光的利用效果提高不明显。 However, this method because the different particle sizes of the quantum dots is not strictly managed in the partition during the adsorption of TiO2, when the sunlight, the particle size of each quantum dot in a certain energy range, the adsorption of the sun can also cause other energy loss range of sunlight, so the use of the effect of sunlight is not obvious.

发明内容 SUMMARY

[0005] 本发明的目的在于针对目前量子点敏化TW2电极对太阳光的利用率不高、光电转换效率较低的不足,在透明导电基底上层叠多层具有不同光谱响应的量子点敏化氧化物薄膜,提供了一种具有宽光谱响应的量子点敏化氧化物薄膜的制备方法。 [0005] The object of the present invention is for a quantum dot sensitized TW2 electrode is not high utilization of sunlight, low photoelectric conversion efficiency is insufficient, the stacked multilayer having a quantum dot sensitized different spectral responses on the transparent conductive substrate oxide thin film, a method of preparing a quantum dot sensitized oxide thin film having a broad spectral response.

[0006] 实现本发明目的的具体技术方案是: [0006] The purpose of the present invention, specific technical solutions are:

一种具有宽光谱响应的量子点敏化氧化物薄膜的制备方法,其特征在于该方法包括以下具体步骤: Quantum dot sensitized preparing an oxide thin film having a broad spectral response, which is characterized in that the method comprises the following steps:

第一步利用电泳沉积法在透明导电基底上沉积氧化物,得到第一层多孔氧化物薄膜,薄膜经清洗、氩气吹干后,在低温下干燥; The first step in using the electrophoretic deposition method on a substrate a transparent conductive oxide, to obtain a first porous oxide film layer, the film was washed, dried with argon, and dried at a low temperature;

第二步利用浸泡吸附或电泳沉积法将量子点敏化材料沉积到第一层多孔氧化物薄膜的孔道表面上,得到第一层量子点敏化的氧化物薄膜,薄膜经清洗、氩气吹干后,在低温下干燥; Step adsorption or soaking using electrophoretic deposition depositing quantum dot sensitized material onto the pore surface of the first oxide layer porous film, to obtain the quantum dot sensitized oxide film having a first layer, a film cleaning, blowing argon after drying, the drying at a low temperature;

第三步在第二步中得到的量子点敏化氧化物薄膜上依次重复第一步和第二步操作, 得到两层层叠的量子点敏化氧化物薄膜; Operating first and second steps are sequentially repeated on the third step quantum dot sensitized oxide thin film obtained in the second step, the two-layer laminate obtained quantum dot sensitized oxide thin film;

第四步在第三步得到的两层层叠量子点敏化氧化物薄膜上依次重复第一步和第二步操作,得到多层层叠的量子点敏化氧化物薄膜,以此重复数次,得到具有宽光谱响应的量子点敏化氧化物薄膜; 其中: The fourth step in the two-layer laminate was repeated quantum dot sensitized oxide thin film obtained in the third step are sequentially operating first and second step, to obtain multi-layered quantum dot sensitized oxide thin film, this was repeated several times, quantum dot sensitized to give an oxide thin film having a broad spectral response; and wherein:

所述透明导电基底为铟锡氧化物导电玻璃或掺氟的SnO2导电玻璃; 所述氧化物为Ti02、ZnO, W2O3> Nb2O5 或Al2O3 ; The transparent conductive substrate is indium tin oxide conductive glass or fluorine-doped SnO2 conducting glass; the oxide Ti02, ZnO, W2O3> Nb2O5 or of Al2O3;

所述量子点敏化材料是由化学元素周期表中II-VI族或III-V族元素组成的无机量子点。 The quantum dot-sensitized material is a periodic table Group II-VI or Group III-V elements of inorganic quantum dots.

[0007] 所述层叠的量子点敏化氧化物薄膜中,每层所使用的量子点的光谱吸收范围不同。 The [0007] laminate quantum dot sensitized oxide thin film, a range of different spectral absorption of each quantum dot is used. 其中第一层氧化物薄膜中所使用的量子点的吸收波长最短(或吸收能量最高),第二层中的次之,第三层中的再次之。 Wherein the absorption wavelength of the quantum dot layer of the first oxide film used as the shortest (or maximum energy absorption), followed in the second layer, the third layer again. 以此类推,直至所有量子点的光谱吸收范围叠加后能从紫外区扩展到近红外区。 And so on until all the spectral range of absorption of the quantum dots superimposed upon extended from the ultraviolet region to the near infrared region.

[0008] 所述的无机量子点是种类或大小或形状不同的量子点,因而它们的光谱吸收范围叠加后可从紫外区扩展到近红外区。 [0008] The inorganic quantum dots or the type or size of the quantum dots of different shapes, so that they are superimposed upon spectral absorption range can be expanded from the ultraviolet region to near infrared region.

[0009] 所述的无机量子点具有能与所述的金属氧化物表面结合的功能性基团,如羟基、 [0009] The inorganic quantum dots having a functional group capable of binding to the metal oxide surface, such as a hydroxyl group,

羧基、磺酸基等。 A carboxyl group, a sulfonic acid group and the like.

[0010] 本发明弥补了现有技术的不足,采取多种量子点协同敏化,提高对太阳光的利用率,增强光电转换效率,提供了一种具有宽光谱响应的量子点敏化氧化物薄膜的制备方法。 [0010] The present invention makes up for the deficiencies of the prior art, synergistic take a variety of quantum dot sensitized, improve the utilization of sunlight and enhance the photoelectric conversion efficiency, there is provided a quantum dot having a broad spectral response sensitized oxide the film preparation method. 利用电泳沉积法在透明导电基底上层叠多层具有不同光谱响应的量子点敏化氧化物薄膜, 当太阳光照射到薄膜上时,能量较高的紫外光首先被第一层能带隙最大或粒径最小的量子点吸收,能量稍低的可见光穿过后被稍后层的能带隙稍小或粒径稍大的量子点吸收,能量很低的近红外光继续穿过后被最后层的能带隙最小或粒径最大的量子点吸收,这样由于各种不同量子点的配合使用,相互弥补了各自吸收光谱范围不够宽的缺点,使所有量子点的光谱吸收范围叠加后能从紫外区扩展到近红外区,从而实现了制备具有宽光谱响应的量子点敏化氧化物薄膜。 Quantum dot sensitized oxide thin film deposition by electrophoresis multilayer laminate having different spectral responses on the transparent conductive substrate, when the sun light is irradiated onto the film, a high energy ultraviolet light is first energy bandgap of the first layer or the maximum quantum dots absorb the smallest particle size, lower energy visible later after passing through the layer bandgap smaller or slightly larger than the diameter of the quantum dots absorb low energy continues through the near-infrared light after the final layer can maximum or minimum bandgap quantum dot particle diameter of the absorbent, so that since use with a variety of different quantum dots to make up for the shortcomings of each respective absorption spectral range is not wide enough, so that all quantum dots superimposed upon spectral absorption range in the ultraviolet region extended from to near infrared region, thereby achieving a quantum dot having a broad spectral response preparation sensitizing oxide thin film.

附图说明 BRIEF DESCRIPTION

[0011] 图1为本发明制备的具有宽光谱响应的量子点敏化氧化物薄膜的示意图; 图2为实施例4中三种量子点的紫外-可见-近红外光吸收光谱图。 [0011] FIG quantum dot sensitized oxide has a broad spectral response films of the present invention prepared in a schematic view; Figure 2 is a UV quantum dots of three embodiments of the Example 4 - visible - near-infrared light absorption spectrum.

具体实施方式 Detailed ways

[0012] 通过以下具体实施例来进一步阐述本发明: 实施例1(1)将合适尺寸的ITO导电玻璃和锌片清洗干净并吹干。 [0012] The present invention is further illustrated by the following specific examples: Example 1 (1) The size of the ITO conductive glass and a suitable clean and dry zinc flake embodiment.

[0013] (2)称取0.1 g的P25 TiO2粉末分散于10 ml正丁醇中,超声30 min,然后离心分离,取上层清液即制得稳定的TW2悬浮液。 [0013] (2) Weigh 0.1 g of P25 TiO2 powder was dispersed in 10 ml of n-butanol, sonicated 30 min, then centrifuged and the supernatant TW2 i.e., produce a stable suspension.

[0014] (3)将ITO导电玻璃作为阳极,锌片作为阴极,浸入上述TiO2悬浮液中,设定外加电压为15 V,沉积时间为5 min,即可在ITO导电玻璃上得到第一层多孔TiO2薄膜。 [0014] (3) The ITO glass as an anode, a zinc plate as the cathode, immersed in the above TiO2 suspension, the applied voltage is set to 15 V, a deposition time of 5 min, to obtain a first layer on ITO porous TiO2 film. 薄膜经清洗、氩气吹干后,在低温下干燥。 Film was washed, dried with argon, and dried at a low temperature.

[0015] (4)取表面带有负电荷的巯基乙酸(TGA)修饰的SiS (TGA-ZnS)量子点水溶胶2. 5 ml,加入0. 5 ml 5 mg/ml抗坏血酸水溶液,用0. 1 M NaOH调节其pH值为9. 0。 [0015] (4) take a negatively charged surface SiS thioglycolic acid (TGA) modified (TGA-ZnS) quantum dots hydrosol 2. 5 ml, was added an aqueous solution of 0. 5 ml 5 mg / ml ascorbic acid, with 0. 1 M NaOH was adjusted to pH 9.0.

[0016] (5)将步骤(3)中表面沉积有多孔TiO2薄膜的ITO导电玻璃作为阳极,锌片作为阴极,浸入上述TGA- ZnS量子点水溶胶中,设定外加电压为2. 8 V,沉积时间为5 min,即可在第一层TiO2薄膜的孔道内表面上沉积一层ZnS量子点。 [0016] (5) The step (3) is deposited on the surface of a porous TiO2 film ITO glass as an anode, a zinc plate as the cathode, immersed in the above aqueous sol TGA- ZnS quantum dot, the applied voltage is set to 2. 8 V deposition time of 5 min, are within the bore of the first layer is deposited TiO2 film on the surface layer of ZnS QDs. 取出ITO导电玻璃,用去离子水清洗后再用氩气吹干。 ITO conductive glass removed, rinsed with deionized water and then blown dry with argon.

[0017] (6)将步骤(5)中表面沉积有第一层TiO2并吸附了ZnS量子点的ITO导电玻璃作为阳极,锌片作为阴极,浸入T^2悬浮液中,利用电泳沉积法可沉积出第二层多孔T^2薄膜。 [0017] (6) The step (5) in a first layer deposited on the surface adsorbed TiO2 and ZnS QDs ITO glass as an anode, a zinc plate as a cathode, immersed in a suspension of T ^ 2, using the electrophoretic deposition process can be depositing a layer of a second porous film T ^ 2. 薄膜经清洗、氩气吹干后,在低温下干燥。 Film was washed, dried with argon, and dried at a low temperature.

[0018] (7)取表面带有负电荷的巯基乙酸(TGA)修饰的CdS (TGA-CdS)量子点水溶胶2. 5 ml,将步骤(6)中表面沉积了第二层多孔TiO2薄膜的ITO导电玻璃浸泡在其中10 h,即可在第二层TiO2薄膜的孔道内表面上吸附一层CdS量子点。 [0018] (7) takes a negatively charged surface of CdS thioglycolic acid (TGA) modified (TGA-CdS) quantum dots hydrosol 2. 5 ml, the step (6) is deposited on the surface of the second layer of porous TiO2 film immersed in the ITO conductive glass wherein 10 h, are within the pores of the second layer of TiO2 film adsorbed on the surface layer of CdS quantum dot. 取出ITO导电玻璃,用去离子水清洗后再用氩气吹干。 ITO conductive glass removed, rinsed with deionized water and then blown dry with argon.

[0019] (8)将步骤(7)中的ITO导电玻璃作为阳极,锌片作为阴极,浸入TiO2悬浮液中, 利用电泳沉积法可沉积出第三层多孔TiO2薄膜。 [0019] (8) the step of ITO conductive glass (7) as an anode, a zinc plate as a cathode, immersed in a suspension of TiO2, can be deposited by electrophoresis deposition of a third layer of a porous TiO2 film. 薄膜经清洗、氩气吹干后,在低温下干燥。 Film was washed, dried with argon, and dried at a low temperature.

[0020] (9)取表面带有负电荷的巯基乙酸(TGA)修饰的I^bS (TGA-PbS)量子点水溶胶2. 5 ml,加入0. 5 ml 5 mg/ml抗坏血酸水溶液,用0. 1 M NaOH调节其pH值为10. 0。 I [0020] (9) takes a negatively charged surface of thioglycolic acid (TGA) modified ^ bS (TGA-PbS) quantum dots hydrosol 2. 5 ml, was added 0. 5 ml 5 mg / ml ascorbic acid solution, dried 0. 1 M NaOH was adjusted to pH 10.0.

[0021] (10)将步骤(8)中表面沉积了第三层多孔TiO2薄膜的ITO导电玻璃作为阳极, 锌片作为阴极,浸入上述TGA- PbS量子点水溶胶中,设定外加电压为2. 8 V,沉积时间为5 min,即可在第三层TiO2薄膜的孔道内表面上沉积一层PbS量子点。 [0021] (10) The steps (8) in the ITO is deposited on the surface of the third layer of porous TiO2 film as an anode, a zinc plate as the cathode, immersed in the above aqueous sol TGA- PbS quantum dots, the applied voltage is set to 2 . 8 V, a deposition time of 5 min, to the third layer in the channel layer is deposited TiO2 film on the surface of the PbS quantum dots. 取出ITO导电玻璃,用去离子水清洗后再用氩气吹干、保存。 ITO conductive glass removed, rinsed with deionized water and then blown dry with argon, save.

[0022] 实施例2 [0022] Example 2

本实施例与实施例ι步骤相似,所不同的是使第一层多孔TW2薄膜的孔道内表面上吸附量子点,第二层多孔TiA薄膜的孔道内表面上吸附Cdk量子点,第三层多孔TiA 薄膜的孔道内表面上吸附1¾¾量子点。 This embodiment is similar to Example ι step embodiment, except that the adsorption of the quantum dot layer on the inner surface of the first porous film TW2 pores, the adsorption on the surface of the quantum dot Cdk inner bore of the second layer TiA porous film, porous third layer 1¾¾ adsorbed on the surface of the quantum dot film TiA inner bore.

[0023] 实施例3 [0023] Example 3

本实施例与实施例ι步骤相似,所不同的是使第一层多孔TW2薄膜的孔道内表面上吸附SiTe量子点,第二层多孔TiA薄膜的孔道内表面上吸附CdTe量子点,第三层多孔TW2 薄膜的孔道内表面上吸附1¾¾量子点。 This embodiment is similar to Example ι step embodiment, except that the adsorption SiTe quantum dot layer on the inner surface of the first porous film TW2 pores, adsorption CdTe QDs second layer on the surface of the inner bore porous TiA film, a third layer 1¾¾ quantum dot adsorbed on the inner pore surfaces of the porous film TW2.

[0024] 实施例4 [0024] Example 4

本实施例与实施例1步骤相似,所不同的是使第一层多孔TiA薄膜的孔道内表面上吸附粒径为2.5 nm的CdTe量子点,第二层多孔TiO2薄膜的孔道内表面上吸附粒径为5.8 nm 的CdTe量子点,第三层多孔TW2薄膜的孔道内表面上吸附粒径为2. 9 nm的I^bS量子点。 This embodiment is similar to Example 1, Step embodiment, except that the adsorption of a particle size of 2.5 nm CdTe quantum dot layer on the inner surface of the first porous film TiA pores, adsorption of particles on the inner surface of the bore of the second layer of porous TiO2 film diameter 5.8 nm CdTe QDs, the inner bore diameter of the third adsorption layer porous film TW2 2. 9 nm on the surface of the quantum dot I ^ bS. [0025] 以上所述仅是本发明的优选实施方式。 [0025] The above are only preferred embodiments of the present invention. 应当指出,对于本技术领域的技术人员来说,依据本发明的技术原理和思想,还可以做出若干变更和改进,例如将用于敏化氧化物薄膜的量子点替换成各种有机染料分子或大环金属配合物,这些变更和改进也应视为本发明的保护范围。 It should be noted that those skilled in the art, the technology according to the principles and concepts of the present invention, can make various changes and modifications, for example, a quantum dot sensitized oxide film replaced with a variety of organic dye molecules or macrocyclic metal complexes, such changes and modifications shall also be considered in the scope of the invention.

Claims (1)

1. 一种具有宽光谱响应的量子点敏化氧化物薄膜的制备方法,其特征在于该方法包括以下具体步骤:第一步利用电泳沉积法在透明导电基底上沉积氧化物,得到第一层多孔氧化物薄膜,薄膜经清洗、氩气吹干后,在低温下干燥;第二步利用浸泡吸附或电泳沉积法将量子点敏化材料沉积到第一层多孔氧化物薄膜的孔道表面上,得到第一层量子点敏化的氧化物薄膜,薄膜经清洗、氩气吹干后,在低温下干燥;第三步在第二步中得到的量子点敏化氧化物薄膜上依次重复第一步和第二步操作, 得到两层层叠的量子点敏化氧化物薄膜;第四步在第三步得到的两层层叠量子点敏化氧化物薄膜上依次重复第一步和第二步操作,得到多层层叠的量子点敏化氧化物薄膜,以此重复数次,得到具有宽光谱响应的量子点敏化氧化物薄膜; 其中:所述透明导电基底为铟锡 Quantum dot sensitized oxide thin film preparation process A having a broad spectrum response, characterized in that the method comprises the following steps: Step electrophoretic deposition method using the oxide on the transparent conductive substrate, a first layer to give a porous oxide film, the film was washed, dried with argon, and dried at a low temperature; the second step using the immersion adsorption method or electrophoretic deposition quantum dot sensitized material is deposited onto the pore surface of the first porous oxide film layer, to give a first layer of a quantum dot sensitized oxide thin film, the film was washed, dried with argon, and dried at a low temperature; the third step are sequentially repeated on the quantum dot-sensitized oxide thin film obtained in the second step of the first and the second operation step, the two-layer laminate obtained quantum dot sensitized oxide thin film; and a fourth step repeated the second step in the first step sequentially on the two-layer laminate quantum dot sensitized oxide thin film obtained in the third step to give multi-layered quantum dot sensitized oxide thin film, this was repeated several times to obtain the quantum dot-sensitized oxide thin film having a broad spectral response; and wherein: said substrate is a transparent conductive indium tin 化物导电玻璃或掺氟的SnA导电玻璃; 所述氧化物为Ti02、ZnO, W2O3> Nb2O5 或Al2O3 ;所述量子点敏化材料是由化学元素周期表中II-VI族或III-V族元素组成的无机量子点。 Compound of conductive glass or fluorine-doped conductive glass SnA; the oxide Ti02, ZnO, W2O3> Nb2O5 or of Al2O3; the quantum dot-sensitized material is a periodic table Group II-VI or III-V group elements consisting of inorganic quantum dots.
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