CN113054054A - Quantum dot photoelectric detector and preparation method thereof - Google Patents
Quantum dot photoelectric detector and preparation method thereof Download PDFInfo
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Abstract
The embodiment of the application discloses a quantum dot photoelectric detector and a preparation method thereof, wherein the method comprises the following steps: providing a substrate with a patterned electrode; and carrying out electrophoretic deposition on the electrode substrate for at least two times to obtain the quantum dot structure with at least two mutual differences. The quantum dot photoelectric detector based on the quantum dot structure can improve the detection range of the quantum dot photoelectric detector by performing electrophoretic deposition on the electrode substrate at least twice, such as adopting different solutions and/or different applied voltages at different positions of the electrode substrate to obtain a plurality of mutually different quantum dot structures.
Description
Technical Field
The application belongs to the technical field of display, and particularly relates to a quantum dot photoelectric detector and a manufacturing method thereof.
Background
Quantum Dots (QDs) are semiconductor nanomaterials with radii smaller than or close to the exciton bohr radius. The quantum dots have the characteristics of adjustable band gap, longer carrier life and solution processing, are functional materials with a very good prospect, and have great potential in the aspect of developing low-cost and high-performance photoelectric detectors.
In the fabrication of quantum dot photodetectors, there is a method of fabricating quantum dots of two emission colors into a first quantum dot composition and a second quantum dot composition carrying ligands of opposite electrical properties, respectively, such that the first quantum dot composition and the second quantum dot composition are patterned by electrodeposition to form a pattern of a specific shape. The method can only process the quantum dots with two luminescent colors simultaneously, and the detection range of the formed quantum dot photoelectric detector is single.
Disclosure of Invention
The embodiment of the application provides a quantum dot photoelectric detector and a preparation method thereof, and the quantum dot photoelectric detector with a larger detection range can be provided.
The embodiment of the application provides a preparation method of a quantum dot photoelectric detector, which comprises the following steps:
providing a substrate with a patterned electrode;
and carrying out electrophoretic deposition on the electrode substrate for at least two times to obtain the quantum dot structure with at least two mutual differences.
Optionally, the performing at least two electrophoretic depositions on the electrode pad comprises:
inserting the electrode substrate into a first quantum dot solution, and providing a first voltage to the electrode substrate so that the first quantum dot solution is deposited on a first preset position of the electrode substrate to form a first quantum dot structure at the first preset position;
inserting the electrode substrate with the first quantum dot structure into a second quantum dot solution, and providing a second voltage to the electrode substrate, so that the second quantum dot solution is deposited on a second preset position of the electrode substrate to form a second quantum dot structure different from the first quantum dot structure at the second preset position.
Optionally, the first quantum dot solution is different from the second quantum dot solution, the electric field strength of the first voltage is the same as that of the second voltage, the thickness of the first quantum dot structure is the same as that of the second quantum dot structure, and the material of the first quantum dot structure is different from that of the second quantum dot structure.
Optionally, the first quantum dot solution is different from the second quantum dot solution, the electric field strength of the first voltage is different from the electric field strength of the second voltage, the thickness of the first quantum dot structure is different from the thickness of the second quantum dot structure, and the material of the first quantum dot structure is different from the material of the second quantum dot structure.
Optionally, the first quantum dot solution is the same as the second quantum dot solution, the electric field strength of the first voltage is different from the electric field strength of the second voltage, the thickness of the first quantum dot structure is different from the thickness of the second quantum dot structure, and the material of the first quantum dot structure is the same as the material of the second quantum dot structure.
Optionally, the first quantum dot solution includes a plurality of first charged quantum dots, the second quantum dot solution includes a plurality of second charged quantum dots, and the material of the first charged quantum dots is the same as or different from that of the second charged quantum dots; and/or
The concentration of the plurality of first band-dot quantum dots in the first quantum dot solution is the same as or different from the concentration of the plurality of second band-dot quantum dots in the second quantum dot solution.
Optionally, all the quantum dot structures are arranged in an array to form a quantum dot array layer, and after at least two electrophoretic depositions are performed on the electrode substrate, the method further includes:
depositing a first signal transmission layer on one side of the quantum dot array layer;
depositing a first electrode layer on one side of the first signal transmission layer far away from the quantum dot array layer;
depositing a second signal transmission layer on one side of the quantum dot array layer far away from the first electrode layer;
and depositing a second electrode layer on one side of the second signal transmission layer far away from the quantum dot array layer.
Optionally, a plurality of the first quantum dot structures form M quantum dot structure rows and N quantum dot structure columns at the first preset positions; a plurality of the second quantum dot structures form M quantum dot structure rows and N quantum dot structure columns at the second preset locations; the first preset position and the second preset position are arranged at intervals.
The embodiment of the application provides still another quantum dot photoelectric detector, quantum dot photoelectric detector includes the carrier and arranges a plurality of quantum dot structures on the carrier, at least two in a plurality of quantum dot structures at least one of material, density and the thickness three of quantum dot structure is different.
Optionally, the plurality of quantum dot structures include a plurality of groups of quantum dot structures, each group of quantum dot structures includes at least two quantum dot structures, materials of all quantum dot structures in each group are the same, and materials of quantum dot structures between each group are different.
Optionally, the plurality of quantum dot structures include a plurality of groups of quantum dot structures, each group of quantum dot structures includes at least two quantum dot structures, and all the quantum dot structures are made of the same material, have different thicknesses, and/or have different pitches.
The quantum dot photoelectric detector based on the quantum dot structure can be used for carrying out multiple times of electrophoretic deposition on the electrode substrate, for example, different solutions and/or different applied voltages are adopted at different positions of the electrode substrate, so that a plurality of mutually different quantum dot structures are obtained, and the detection range of the quantum dot photoelectric detector based on the quantum dot structure can be improved.
Drawings
The technical solutions and advantages of the present application will become apparent from the following detailed description of specific embodiments of the present application when taken in conjunction with the accompanying drawings.
Fig. 1 is a schematic first flow chart of a method for manufacturing a quantum dot photodetector according to an embodiment of the present disclosure.
Fig. 2 is a schematic flow chart of electrophoretic deposition in the method for manufacturing the quantum dot photodetector provided in fig. 1.
Fig. 3 is a schematic diagram of a process of electrophoretic deposition in the preparation method of the quantum dot photodetector provided in fig. 2.
Fig. 4 is a second flow chart of a manufacturing method of a quantum dot photodetector provided in the embodiment of the present application.
Fig. 5 is a schematic structural diagram of a quantum dot photodetector according to an embodiment of the present application.
Fig. 6 is a schematic view of a first quantum dot structure of a quantum dot photodetector provided in an embodiment of the present application.
Fig. 7 is a schematic view of a second quantum dot structure of a quantum dot photodetector provided in an embodiment of the present application.
Fig. 8 is a schematic structural diagram of a third quantum dot of the quantum dot photodetector provided in the embodiment of the present application.
Fig. 9 is a schematic structural diagram of a fourth quantum dot of the quantum dot photodetector provided in the embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Quantum Dots (CQDs) are semiconductor nanomaterials with adjustable band gaps, long carrier lifetimes, and solution processable properties. The photoelectric detector is a light detection device made by utilizing the photoconductive effect of semiconductor materials, and has wide application in various fields of military affairs and national economy. However, the existing quantum dot photoelectric detector can only detect a single range and accuracy.
The embodiment of the application carries out electrophoretic deposition for at least two times respectively through different preset positions on the electrode substrate, and quantum dot structures with at least two mutual differences are obtained by changing quantum dot solution or voltage intensity in the electrophoretic deposition process, so that the formed quantum dot photoelectric detector has a larger detection range. The following description will be made in detail with reference to drawings.
Please refer to fig. 1. Fig. 1 is a schematic first flow chart of a method for manufacturing a quantum dot photodetector according to an embodiment of the present disclosure. The preparation method of the quantum dot photoelectric detector comprises the following steps:
11. a substrate having a patterned electrode is provided.
The patterned electrode substrate with a specific shape is processed by utilizing a photoetching method, wherein the material of the electrode substrate is selected according to the requirement of a device structure, and various conductive materials such as ITO, gold, silver, aluminum and the like can be selected. The specific shape of the patterning depends on the design of the whole device, such as a large-scale array structure. The resolution of the array depends on the photoetching precision, so that the photoetching precision in the photoetching method can be improved, and the extremely high device resolution can be obtained.
12. And carrying out electrophoretic deposition on the electrode substrate for at least two times to obtain the quantum dot structure with at least two mutual differences.
In an alternative embodiment, the electrode substrate is inserted into a first quantum dot solution, and a first voltage is applied to the electrode substrate, so that the first quantum dot solution is deposited on a first predetermined position of the electrode substrate to form a first quantum dot structure at the first predetermined position. And inserting the electrode substrate with the first quantum dot structure into a second quantum dot solution, and providing a second voltage to the electrode substrate with the first quantum dot structure, so that the second quantum dot solution is deposited to a second preset position of the electrode substrate with the first quantum dot structure to form a second quantum dot structure at the second preset position, and the quantum dot structures are arrayed to form a quantum dot array layer.
It should be noted that the quantum dot solution in at least two electrophoretic depositions may include not only the first quantum dot solution and the second quantum dot solution, but also a third quantum dot solution or even more quantum dot solutions.
The difference between the first quantum dot structure and the second quantum dot structure in the embodiment of the present application may be formed because the first quantum dot solution is different from the second quantum dot solution. For example, the concentration of the first quantum dot solution may be the same as the concentration of the second quantum dot solution, and the quantum dot material of the first quantum dot solution may be different from the quantum dot material of the second quantum dot solution. For another example, the concentration of the first quantum dot solution may be different from the concentration of the second quantum dot solution, and the quantum dot material of the first quantum dot solution may be the same as the quantum dot material of the second quantum dot solution. For example, the concentration of the first quantum dot solution may be different from the concentration of the second quantum dot solution, and the quantum dot material of the first quantum dot solution may be different from the quantum dot material of the second quantum dot solution.
The difference between the first quantum dot structure and the second quantum dot structure in the embodiment of the present application may also be due to the difference between the first voltage and the second voltage. For example, the magnitude of the electric field intensity of the first voltage and the magnitude of the electric field intensity of the second voltage may be different, and the direction of the electric field intensity of the first voltage and the direction of the electric field intensity of the second voltage may be the same. For example, the magnitude of the electric field intensity of the first voltage may be different from the magnitude of the electric field intensity of the second voltage, and the direction of the electric field intensity of the first voltage may be different from the direction of the electric field intensity of the second voltage. For example, the magnitude of the electric field intensity of the first voltage may be the same as the magnitude of the electric field intensity of the second voltage, and the direction of the electric field intensity of the first voltage may be different from the direction of the electric field intensity of the second voltage.
In an alternative embodiment, the concentration of the first quantum dot solution is the same as the concentration of the second quantum dot solution, the quantum dot material of the first quantum dot solution is different from the quantum dot material of the second quantum dot solution, the electric field strength of the first voltage is the same as the electric field strength of the second voltage, so that the thickness of the first quantum dot structure is the same as the thickness of the second quantum dot structure, and the material of the first quantum dot structure is different from the material of the second quantum dot structure.
In an alternative embodiment, the quantum dot material of the first quantum dot solution is the same as the quantum dot material of the second quantum dot solution, the concentration of the first quantum dot solution is different from that of the second quantum dot solution, the electric field strength of the first voltage is the same as that of the second voltage, so that the thickness of the first quantum dot structure is different from that of the second quantum dot structure, and the material of the first quantum dot structure is the same as that of the second quantum dot structure.
In an alternative embodiment, the concentration of the first quantum dot solution is different from the concentration of the second quantum dot solution, the quantum dot material of the first quantum dot solution is different from the quantum dot material of the second quantum dot solution, and the electric field strength of the first voltage is the same as the electric field strength of the second voltage, so that the thickness of the first quantum dot structure is different from the thickness of the second quantum dot structure, and the material of the first quantum dot structure is different from the material of the second quantum dot structure.
It should be noted that, for the charged quantum dots, during the electrophoretic deposition process, part of the quantum dots fall off, which results in a decrease in the dissolution degree of the quantum dots in the solvent, so that the quantum dot structure can be stably deposited on the surface of the electrode substrate at the predetermined position, and therefore, the deposited first quantum dot structure is not damaged in the subsequent electrophoretic deposition process of the second quantum dot structure, and thus the method is very suitable for the deposition of various quantum dot structures.
In an optional embodiment, the magnitude of the electric field intensity of the first voltage is different from the magnitude of the electric field intensity of the second voltage, the direction of the electric field intensity of the first voltage is the same as the direction of the electric field intensity of the second voltage, when the first quantum dot solution is the same as the second quantum dot solution, the thickness of the first quantum dot structure is different from the thickness of the second quantum dot structure, and the material of the first quantum dot structure is the same as the material of the second quantum dot structure. When the first quantum dot solution is different from the second quantum dot solution, the specific difference between the first quantum dot structure and the second quantum dot structure is as described above, and thus, the description is not redundant.
It is understood that the density of the quantum dot structure can be adjusted by changing the electric field intensity, for example, the charge transfer rate of the quantum dot structure can be increased with the increase of the electric field intensity, so that the deposition density of the quantum dot structure is increased, and the thickness of the obtained quantum dot structure is thicker. The charge transfer rate of the quantum dot structure can be reduced along with the reduction of the electric field intensity, so that the deposition density of the quantum dot structure is reduced, and the thickness of the obtained quantum dot structure is thinner. Thereby this application is through changing the quantum dot structure of electric field intensity preparation different deposition density on same substrate to realize the quantum dot structure of different carrier mobility on same substrate, greatly widened the detection range and the precision of single device, further prepare and obtain quantum dot image sensor, can integrate this detector to the smart mobile phone camera, combine the light source of people's eye safety, realize being used for augmented reality's compact sensor module.
In other embodiments, in the electrophoretic deposition process, when the first voltage and the second voltage are respectively applied to the first preset position or the first voltage and the second voltage are respectively applied to the second preset position, it should be further understood that, when the electric field intensity of the first voltage is smaller than that of the second voltage, the charged quantum dots in the first quantum dot solution continue to be deposited on the first quantum dot structure. When the electric field intensity of the first voltage is greater than that of the second voltage, part of the charged quantum dots in the first quantum dot solution can be dissolved in the first quantum dot solution.
The thickness of the obtained first quantum dot structure is the same as that of the second quantum dot structure, the material of the first quantum dot structure is the same as that of the second quantum dot structure, and a first preset position of the first quantum dot structure and a second preset position of the second quantum dot structure are arranged on two sides of the electrode substrate. When the first quantum dot solution is different from the second quantum dot solution, the specific difference between the first quantum dot structure and the second quantum dot structure is obtained as described above, and is not redundant here.
In an optional embodiment, the magnitude of the electric field intensity of the first voltage is different from the magnitude of the electric field intensity of the second voltage, the direction of the electric field intensity of the first voltage is different from the direction of the electric field intensity of the second voltage, the first quantum dot solution and the second quantum dot solution are the same, so that the thickness of the first quantum dot structure is different from that of the second quantum dot structure, and the material of the first quantum dot structure is the same as that of the second quantum dot structure. The first preset position where the first quantum dot structure exists and the second preset position where the second quantum dot structure exists are located on two sides of the electrode substrate. When the first quantum dot solution is different from the second quantum dot solution, the specific difference between the first quantum dot structure and the second quantum dot structure is as described above, and thus, the description is not redundant.
The size of the quantum dot structure obtained by electrodeposition depends on the size of the electrode substrate, so that the minimum size of the quantum dot structure after electrophoretic deposition can reach the precision of 1 micron. The thickness of the quantum dot structure depends mainly on the electric field strength, the concentration of the quantum dot solution and the deposition time. And is in direct proportion to the three factors, wherein the electric field intensity is between 0 and 100V/mu m, the concentration of the quantum dot solution is between 0.1mg/mL and 1000mg/mL, and the two have larger regulation ranges, so that the quantum dot array layer can be accurately regulated from a few nanometers to tens of micrometers.
The quantum dot structure with different deposition densities is prepared on the same substrate by changing the voltage, the quantum dot structure with different carrier mobilities is realized on the same substrate, and the monolithic integration of multiple materials and multiple devices is greatly promoted.
It is to be understood that the plurality of first quantum dot structures form M quantum dot structure rows and N quantum dot structure columns at the first predetermined locations; the plurality of second quantum dot structures form M quantum dot structure rows and N quantum dot structure columns at a second predetermined location. The first preset position and the second preset position are arranged at intervals, wherein M is larger than or equal to one, and N is larger than or equal to one.
Referring to fig. 2 and 3, fig. 2 is a schematic diagram illustrating a flow of electrophoretic deposition in the method for manufacturing the quantum dot photodetector provided in fig. 1, and fig. 3 is a schematic diagram illustrating a process of electrophoretic deposition in the method for manufacturing the quantum dot photodetector provided in fig. 2. The method comprises the following steps:
and 121, forming stable electric field intensity by the first electrode and the second electrode.
The first electrode and/or the second electrode are made of indium tin oxide or a metal material, and the metal material can be gold, platinum or other metal materials. Further, the composition materials of the first electrode and the second electrode may be the same to ensure consistency of the materials of the first electrode and the second electrode, so that the first electrode and the second electrode have the same physical and chemical properties.
The deposition area of the electrode substrate is completely immersed in the quantum dot solution using a quantum dot solution comprising a plurality of charged quantum dots 122.
The constituent materials of the quantum dots in the quantum dot solution 40 include IV group (Si, Ge, GeSn), II-V group (InAs, InSb), IV-VI group (PbS, PbSe, PbTe), III-VI group (HgCdTe, HgSe, HgTe), I-VI group (Ag2S, Ag2Se) and ternary I-III-VI (CuInS2, InGaAs, CuInSe2, AgBiS2, AAgInSe2), and the latest metal perovskite halide quantum dots, such as CsSn 3, CsSnxPb1-x, FAPbI3 and CxFA 1-xPbI3, graphene quantum dots, and the like.
And 123, under the action of an electric field formed after the first electrode and the second electrode are electrified, the charged quantum dots are deposited on the electrode substrate.
The first electrode and the second electrode are oppositely arranged, and when the first electrode and the second electrode have electric signals with different electric properties, an electric field perpendicular to the first electrode is formed between the first electrode and the second electrode. For example, an electric signal different from the electric property of the charged quantum dot is supplied to the first electrode, and an electric signal identical to the electric property of the charged quantum dot is supplied to the second electrode, and the charged quantum dot is deposited on the electrode substrate under the electric field intensity supplied from the first electrode and the second electrode. Specifically, when the charged quantum dots are positively charged, a low voltage signal may be provided to the first electrode, and a high voltage signal may be provided to the second electrode, where the high voltage signal is greater than the low voltage signal, so that an electric field is formed between the first electrode and the second electrode, and the direction of the electric field is directed from the second electrode to the first electrode. Therefore, under the action of the electric field, the plurality of charged quantum dots with positive electricity are subjected to the vertically downward electric field force, can abut against the first electrode, and are deposited on the electrode substrate.
And (124) cleaning residues on the electrode substrate.
The electrode substrate is taken out of the quantum dot solution 40 under the condition of maintaining the voltage, and is placed into a washing solution for washing for 10-30 seconds to remove unnecessary quantum dot deposition and quantum dot solution 40 residues on the substrate. Wherein the washing solution is typically the solvent of the quantum dot solution 40 in the 123 steps, thereby obtaining the quantum dot array layer 43 on the electrode substrate.
The charged quantum dots are driven to move and gather on the electrodes with opposite electric properties through electrophoresis. Under the action of an electric field force vertical to the surface of the electrode, the quantum dots are tightly stacked in the film forming process, so that gaps among the quantum dots are greatly reduced, and the high-density quantum dot film is obtained. Compared with quantum dot films with the same thickness obtained by a spin-coating method and an ink-jet printing method, the quantum dot films obtained by electrophoretic deposition have higher luminous intensity, the luminous brightness of the quantum dot films subjected to electrophoretic deposition with the same thickness is about 2.2 times that of the quantum dot films prepared by spin-coating and printing, and the quantum dot films obtained by surface electrophoretic deposition have higher density.
In some embodiments, a method of fabricating a quantum dot photodetector generally includes the following steps, see fig. 4 for details. Fig. 4 is a second flow chart of a manufacturing method of a quantum dot photodetector provided in the embodiment of the present application.
11. A substrate having a patterned electrode is provided.
The patterned electrode substrate having a specific shape is processed using photolithography, wherein the material of the electrode substrate is selected based on the device structure needs.
12. And carrying out electrophoretic deposition on the electrode substrate for at least two times to obtain the quantum dot structure with at least two mutual differences. The specific situation is as described above, and is not described in detail herein.
13. And depositing a first signal transmission layer on one side of the quantum dot array layer.
The first signal transmission layer can be an electron transmission layer, and the size and the thickness of the first signal transmission layer can be adjusted according to the structural requirement of the device. Note that the first signal transmission layer cannot be dissolved by the quantum dot solution 40.
14. And depositing a first electrode layer on one side of the first signal transmission layer far away from the quantum dot array layer.
The first electrode layer may be formed of a positive electrode material or a negative electrode material. The specific material is selected based on the structure of the device, and various conductive materials such as ITO, gold, silver, aluminum and the like can be selected. Wherein the specific shape depends on the design of the whole device, such as large-scale array structure.
15. And depositing a second signal transmission layer on the side of the quantum dot array layer far away from the first electrode layer.
The second signal transmission layer can be a hole transmission layer, and the size and the thickness of the second signal transmission layer can be adjusted according to the structural requirement of the device. Note that the second signal transmission layer cannot be dissolved by the quantum dot solution 40.
16. And depositing a second electrode layer on the side of the second signal transmission layer far away from the quantum dot array layer.
The second electrode layer may be formed of a positive electrode material or a negative electrode material. The specific material is selected based on the structure of the device, and various conductive materials such as ITO, gold, silver, aluminum and the like can be selected. Wherein the specific shape depends on the design of the whole device, such as large-scale array structure.
It should be noted that, in some embodiments, step 12 and step 14 may not be implemented, and may be reduced or increased according to the device structure.
The embodiment of the application also provides a quantum dot photoelectric detector, which comprises a carrier 2 and a plurality of quantum dot structures arranged on the carrier 2, wherein at least two quantum dot structures in the plurality of quantum dot structures are different from each other.
Specifically, referring to fig. 5 to 9, fig. 5 is a schematic diagram of a first structure of a quantum dot photodetector provided in the embodiment of the present application, fig. 6 is a schematic diagram of a first quantum dot structure of a quantum dot photodetector provided in the embodiment of the present application, fig. 7 is a schematic diagram of a second quantum dot structure of a quantum dot photodetector provided in the embodiment of the present application, fig. 8 is a schematic diagram of a third quantum dot structure of a quantum dot photodetector provided in the embodiment of the present application, and fig. 9 is a schematic diagram of a fourth quantum dot structure of a quantum dot photodetector provided in the embodiment of the present application. The quantum dot photodetector 4 includes a quantum dot array layer 43, a first signal transmitting layer 42, a second signal transmitting layer 44, a first electrode layer 41, and a second electrode layer 45. The first signal transmission layer 42 and the second signal transmission layer 44 are respectively located at two sides of the quantum dot array layer 43, the first electrode layer 41 is located at one side of the quantum dot array layer 43 away from the first signal transmission layer 42, and the second electrode layer 45 is located at one side of the quantum dot array layer 43 away from the second signal transmission layer 44.
The quantum dot array layer comprises a carrier 2 and a plurality of quantum dot structures arranged on the carrier 2, wherein the materials of all the quantum dot structures in each group are the same, and the materials of the quantum dot structures in each group are different and the thicknesses of the quantum dot structures are the same. For example, see FIG. 6 for details. The plurality of quantum dot structures includes a first quantum dot structure 21, a second quantum dot structure 22, a third quantum dot structure 23, and a fourth quantum dot structure 24. The first quantum dot structure 21, the second quantum dot structure 22, the third quantum dot structure 23 and the fourth quantum dot structure 24 are arranged at intervals to form an array with four rows and four columns. The thickness of the first quantum dot structure 21, the thickness of the second quantum dot structure 22, the thickness of the third quantum dot structure 23 and the thickness of the fourth quantum dot structure 24 are the same, and the material of the first quantum dot structure 21, the material of the second quantum dot structure 22, the material of the third quantum dot structure 23 and the material of the fourth quantum dot structure 24 are different. The first quantum dot structure 21 comprises four first quantum dot sub-structures 211, and each of the first quantum dot sub-structures 211 is arranged at intervals. The second quantum dot structure 22 includes four second quantum dot sub-structures 221, and each of the second quantum dot sub-structures 221 is disposed at a distance from each other. The third quantum dot structure 23 includes four third quantum dot sub-structures 231, and each of the third quantum dot sub-structures 231 is disposed at an interval from each other. The fourth quantum dot structure 24 includes four fourth quantum dot sub-structures 241, and each of the fourth quantum dot sub-structures 241 is disposed at an interval from each other. The first quantum dot structure 21, the second quantum dot structure 22, the third quantum dot structure 23 and the fourth quantum dot structure 24 are disposed at intervals from each other.
Wherein, in some embodiments, the quantum dot photodetector comprises a plurality of quantum dot structures, all of the quantum dot structures within each group being of the same material, of different thickness and/or of different spacing. For example, the first quantum dot structure 21 includes four different first quantum dot sub-structures 211. That is, the first quantum dot structure 21 includes a first quantum dot substructure 211, a first quantum dot second substructure 212, a first quantum dot third substructure 213, and a first quantum dot fourth substructure 214. The material of the first quantum dot substructure 211, the material of the first quantum dot second substructure 212, the material of the first quantum dot third substructure 213, and the material of the first quantum dot fourth substructure 214 are the same, but in the electrophoresis process, voltages applied to the first quantum dot substructure 211, the first quantum dot second substructure 212, the first quantum dot third substructure 213, and the first quantum dot fourth substructure 214 are different, for example, the first voltage V1, the second voltage V2, the third voltage V3, and the fourth voltage V4 are different, and the thickness of the first quantum dot substructure 211, the thickness of the first quantum dot second substructure 212, the thickness of the first quantum dot third substructure 213, and the thickness of the first quantum dot fourth substructure 214 are different. The different electric field strengths result in different spacing between the quantum dots and, therefore, different densities between the quantum dot structures. For example, the density of the first quantum dot substructure 211, the density of the first quantum dot second substructure 212, the density of the first quantum dot third substructure 213, and the density of the first quantum dot fourth substructure 214 are all different.
Wherein, in some embodiments, the fourth quantum dot structure 24 includes four different fourth quantum dot substructures. That is, the fourth quantum dot structure 24 includes a fourth quantum dot substructure 241, a fourth quantum dot first substructure 242, a fourth quantum dot second substructure 243, and a fourth quantum dot third substructure 244. The fourth quantum dot substructure 241, the fourth quantum dot first substructure 242, the fourth quantum dot second substructure 243, and the fourth quantum dot third substructure 244 are made of the same material, but are formed with different thicknesses.
In some embodiments, the quantum dot photodetector includes a plurality of quantum dot structures, all quantum dot structures within each group being of the same material, all quantum dot structures within each group being of different thickness, the quantum dot structures between groups being of different material. For example, see FIG. 7 for details. The material of the first quantum dot structure 21, the material of the second quantum dot structure 22, and the material of the third quantum dot structure 23 may be the same or different. However, the material of the first quantum dot substructure 211 is the same as the material of the fourth quantum dot substructure 241, and the thickness is different. The material of the first quantum dot substructure 211 is different from the material of the fourth quantum dot second substructure 243, and the thickness is different. All quantum dot structures within the second set of quantum dot structures 22 are the same material and the same thickness. In the quantum dot photodetector, the material does not necessarily have to be different between the first quantum dot substructure 211 and the fourth quantum dot substructure 241, and any difference between the quantum dot substructures may be used. This is not repeated herein.
It will be appreciated that in some embodiments the quantum dot photodetector comprises a plurality of quantum dot structures, all of the quantum dot structures within each group being of different material, all of the quantum dot structures within each group being of different thickness, the quantum dot structures between groups being of different material. This is not repeated herein.
In some embodiments, the quantum dot photodetector includes a plurality of quantum dot structures, all of the quantum dot structures within each group being of the same material, the quantum dot structures between each group being of the same or different material, and the quantum dot structures between each group being of different thickness portions. See, for example, figure 8 in particular. The material of the first quantum dot structure 21 is the same as the material of the third quantum dot structure 23, and the thickness is the same. The material of the first quantum dot structure 21 is different from the material of the second quantum dot structure 22, but the thickness is the same. The first quantum dot structure 21 is different in material and thickness from the fourth quantum dot structure 24.
In some embodiments, the quantum dot photodetector includes a plurality of quantum dot structures, all of the quantum dot structures within each group being of the same material, the quantum dot structures between each group being of the same material, but the quantum dot structures between each group being of different thickness, and all of the quantum dot structures within each group being of different thickness. See in particular fig. 9. The voltages V1 to V16 applied to each quantum dot structure are different, specifically, the first voltage V1, the second voltage V2, the third voltage V3, the fourth voltage V4, the fifth voltage V5, the sixth voltage V6, the seventh voltage V7, the eighth voltage 8, the ninth voltage V9, the tenth voltage V10, the eleventh voltage V11, the twelfth voltage V12, the thirteenth voltage V13, the fourteenth voltage V14, the fifteenth voltage V15, and the sixteenth voltage V16 are different, and the obtained material of the first quantum dot structure 21, the material of the second quantum dot structure 22, and the material of the third quantum dot structure 23 are the same as the material of the fourth quantum dot structure 24, but have different thicknesses. The thicknesses of the first quantum dot substructure 211, the first quantum dot second substructure 212, the first quantum dot third substructure 213, and the first quantum dot fourth substructure 214 in the first quantum dot structure 21 group are all different, and the thicknesses of the fourth quantum dot substructure 241, the fourth quantum dot second substructure 242, the fourth quantum dot third substructure 243, and the fourth quantum dot fourth substructure 244 in the fourth quantum dot structure 24 group are all different.
It should be noted that, in some embodiments, the quantum dot photodetector includes a plurality of quantum dot structures, where materials of all quantum dot structures in each group are different, materials of quantum dot structures between groups are different, thicknesses of quantum dot structures between groups are different, and thicknesses of all quantum dot structures in each group are different.
In some embodiments, the quantum dot photodetector includes a plurality of quantum dot structures, all the quantum dot structures within each group being of the same material, the quantum dot structures between each group being of different thickness, and all the quantum dot structures within each group being of different thickness.
It should be noted that the quantum dot photodetector includes not only an array of four rows and four columns, but also any one of at least two quantum dot structures.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The quantum dot photoelectric detector and the preparation method thereof provided by the embodiment of the present application are described in detail above, and the principle and the embodiment of the present application are explained by applying a specific example, and the description of the above embodiment is only used to help understanding the method and the core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (11)
1. A method for manufacturing a quantum dot photodetector, the method comprising:
providing a substrate with a patterned electrode;
and carrying out electrophoretic deposition on the electrode substrate for at least two times to obtain the quantum dot structure with at least two mutual differences.
2. The method for preparing a quantum dot photodetector as claimed in claim 1, wherein the at least two electrophoretic depositions to the electrode sheet comprise:
inserting the electrode substrate into a first quantum dot solution, and providing a first voltage to the electrode substrate so that the first quantum dot solution is deposited on a first preset position of the electrode substrate to form a first quantum dot structure at the first preset position;
inserting the electrode substrate with the first quantum dot structure into a second quantum dot solution, and providing a second voltage to the electrode substrate, so that the second quantum dot solution is deposited on a second preset position of the electrode substrate to form a second quantum dot structure different from the first quantum dot structure at the second preset position.
3. The method of claim 2, wherein the first quantum dot solution is different from the second quantum dot solution, the electric field intensity of the first voltage is the same as the electric field intensity of the second voltage, the thickness of the first quantum dot structure is the same as the thickness of the second quantum dot structure, and the material of the first quantum dot structure is different from the material of the second quantum dot structure.
4. The method of claim 2, wherein the first quantum dot solution is different from the second quantum dot solution, the electric field strength of the first voltage is different from the electric field strength of the second voltage, the thickness of the first quantum dot structure is different from the thickness of the second quantum dot structure, and the material of the first quantum dot structure is different from the material of the second quantum dot structure.
5. The method of claim 2, wherein the first quantum dot solution is the same as the second quantum dot solution, the electric field strength of the first voltage is different from the electric field strength of the second voltage, the thickness of the first quantum dot structure is different from the thickness of the second quantum dot structure, and the material of the first quantum dot structure is the same as the material of the second quantum dot structure.
6. The method of claim 2, wherein the first quantum dot solution comprises a plurality of first charged quantum dots, the second quantum dot solution comprises a plurality of second charged quantum dots, and the first charged quantum dot material and the second charged quantum dot material are the same or different; and/or
The concentration of the plurality of first band-dot quantum dots in the first quantum dot solution is the same as or different from the concentration of the plurality of second band-dot quantum dots in the second quantum dot solution.
7. The method for preparing a quantum dot photodetector as claimed in any one of claims 1 to 6, wherein all the quantum dot structure arrays are arranged to form a quantum dot array layer, and after at least two electrophoretic depositions on the electrode substrate, the method further comprises:
depositing a first signal transmission layer on one side of the quantum dot array layer;
depositing a first electrode layer on one side of the first signal transmission layer far away from the quantum dot array layer;
depositing a second signal transmission layer on one side of the quantum dot array layer far away from the first electrode layer;
and depositing a second electrode layer on one side of the second signal transmission layer far away from the quantum dot array layer.
8. The method of any one of claims 1-6, wherein a plurality of the first quantum dot structures form M rows and N columns of quantum dot structures at the first predetermined locations; a plurality of the second quantum dot structures form M quantum dot structure rows and N quantum dot structure columns at the second preset locations; the first preset position and the second preset position are arranged at intervals.
9. A quantum dot photodetector comprising a carrier and a plurality of quantum dot structures disposed on the carrier, at least two of the plurality of quantum dot structures differing in at least one of material, density, and thickness.
10. The quantum dot photodetector of claim 9, wherein the plurality of quantum dot structures comprises a plurality of sets of quantum dot structures, each set of quantum dot structures comprising at least two quantum dot structures, and wherein all quantum dot structures within each set are of the same material and the quantum dot structures between sets are of different materials.
11. The quantum dot photodetector of claim 9, wherein the plurality of quantum dot structures comprises a plurality of sets of quantum dot structures, each set of quantum dot structures comprising at least two quantum dot structures, all quantum dot structures being of the same material, of different thickness and/or of different spacing.
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