CN103943366A - Dye-sensitized solar cell of novel structure and preparation method thereof - Google Patents
Dye-sensitized solar cell of novel structure and preparation method thereof Download PDFInfo
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention discloses a preparation method of a dye-sensitized solar cell of a novel structure. The novel structure, namely a nanocrystal thin film structure, is inner zinc oxide nanocrystal/organic dye I/outer zinc oxide thin layer/organic dye II. Two dyes which are different in absorption region and matched in energy level are selected to realize energy transfer from the organic dye I to the organic dye II according to Forster Resonance Energy Transfer (FRET) mechanism, and then photoelectrons are injected into the inner-layer zinc oxide by the organic dye II, so that the spectral response range of a dye-sensitized nanocrystal composite film electrode is extended, and therefore, the photoelectric conversion efficiency of the cell is increased.
Description
Technical field
The invention belongs to DSSC technical field, be specifically related to a kind of DSSC of new structure and the preparation method of this battery.
Background technology
The energy and energy security have become the key issue of current world economy development, to regenerative resource particularly the development and utilization of solar energy resources day by day become the developing direction with strategic importance that numerous countries pay close attention to.DSSC, as a kind of novel, also solar cell with practical value of low price, has been subject to various countries researcher's extensive concern since Gr tzel invention in 1991, and its photoelectric conversion efficiency has reached more than 11% at present.Unique good characteristic of other type solar cells that what it possessed be different from, with and preparation technology is simple, material is cheap, with low cost, make dye-sensitized semiconductor nano-crystal thin-film solar cell, as the solar cell of a kind of new ideas, new principle, new construction, efficiently utilizing solar energy, improving photoelectric conversion efficiency aspect and there are huge potentiality.
DSSC mainly by work electrode, dyestuff, to electrode and electrolyte ingredient.Wherein work electrode comprises electro-conductive glass substrate and the suprabasil semiconductor nano material layer of electro-conductive glass, and semiconductor nano material layer not only carries dyestuff as the carrier of Dye Adsorption, and transmission electronic.What application was more at present is titanium dioxide nanocrystalline.Nano zine oxide can be with close semiconductor nano material as a kind of and titanium dioxide, because it has good photoelectric properties, large specific area, porousness, is easy to electric transmission, stable chemical nature, the advantage such as cheap, and environment is not polluted, be widely used in DSSC.Simultaneous oxidation zinc nano-crystal thin-film can adopt the method preparation of electrochemical deposition, and electrodeposition process is to prepare the method that semiconductive thin film is conventional.Its advantage is low cost, large area, be conducive to industrially scalable application in the future, and the refuse producing is confined in solution, is easy to refuse processing, environmentally friendly.By adding organic dyestuff can regulate and control the direction of growth and the film morphology of zinc oxide, obtain having the zinc oxide nano-crystal thin-film of loose structure in deposited electrolyte.Because this method does not need high temperature sintering just can obtain monocrystalline loose structure, and the process of deposition growth guaranteed the unimpeded of electron transport passage, the zinc oxide nano-crystal thin-film of adopting preparation is in this way suitable for being applied in dye sensitization nano-crystal thin-film solar cell.Can only the less ultraviolet light of absorbing wavelength because of semi-conducting material, can not absorb the visible ray that accounts for most of energy in sunlight, need to can absorb at nano-crystal thin-film adsorption the organic dye molecule of visible ray.In order to improve the photoelectric conversion efficiency of DSSC, can, by optimizing semiconductor film membrane structure, improve absorption and utilization to sunlight, and then improve photoelectric conversion efficiency.Need on the other hand to improve by the spectral response range of expansion absorbing dye the photoelectric conversion efficiency of DSSC.In this regard, once adopt two kinds of organic dyestuff that absorb locations complementary to carry out common sensitization, be called cooperated-sensitization, expanded the spectral response range of DSSC.But owing to having competitive Adsorption between two kinds of dyestuffs, in the situation that semiconductor nano-crystal thin-film specific area is certain, because the absorption of another kind of dyestuff makes the performance adsorbance decline of dyestuff relatively preferably, cause the photoelectric conversion efficiency of common sensitization lower than the efficiency of the single sensitization of organic dyestuff of sensitization better performances.
Summary of the invention
For the above-mentioned state of the art, technical problem to be solved by this invention has been to provide a kind of DSSC of new structure, solve the common sensitization problem of two kinds of dyestuffs that absorb locations complementary, propose the method for this new structure nano-crystal thin-film of preparation simultaneously.Technical scheme disclosed in this invention is as follows:
A kind of dye sensitization ZnO nano-crystal porous film electrode, is characterized in that it is to be attached on electro-conductive glass and to be formed by interior zinc oxide nano crystalline substance/organic dyestuff I/ external oxidation zinc thin layer/organic dyestuff II
;wherein said organic dyestuff I is eosin, fluorescein, and merbromin, phloxine B, Erythrosin B or Meng Jia draw red; Organic dyestuff II is rhodamine B, methyl blue or side's acid.
The present invention further discloses the method that adopts dye sensitization ZnO nano-crystal porous film electrode to prepare solar cell, it is characterized in that being undertaken by following step: (1) electro-conductive glass processing: by electro-conductive glass cut-parts, clean, soak;
(2) preparation of dye sensitization ZnO nano-crystal porous film electrode;
Get the electro-conductive glass that a slice was soaked, dry up, in 70 DEG C of water-baths, activate 10 min with electrochemical method, then in a glassware, add the zinc nitrate of 10-20 mL 0.05 mol/L and the potassium chloride mixed solution of 0.1 mol/L, make work electrode with electro-conductive glass, zinc silk is done electrode, saturated calomel electrode is made reference electrode, under-1.0 V and two voltages of-0.8 V, carries out electrochemical deposition, and sedimentation time is respectively 35-65 min and 5 min, while starting to deposit, first electrochemical deposition 5 min ZnO compacted zones under the V condition of constant voltage-1.0, then with liquid-transfering gun to the organic dyestuff I solution 400-600 μ L that adds 800-1000 μ mol/L in above-mentioned mixed solution, then absorption electro-deposition being obtained has the ZnO porous membrane of organic dyestuff I under 100 DEG C of temperature conditions, constant temperature 30 min, immersed concentration and be in the organic dyestuff II ethanol solution of 0.5 mmol/L and left standstill 12 h, then take out with after redistilled water cleaning, dry up with cold wind, make organic dyestuff II sensitization on ZnO/ organic dyestuff I/ZnO combination electrode surface, forming structure is two dye sensitization nano-crystal thin-film electrodes of ZnO/ organic dyestuff I/ZnO/ organic dyestuff II,
(3) preparation of redox electrolytes liquid; Its proportioning is 0.5 mol/L LiI, 0.05 mol/L I
2, solvent is acetonitrile;
(4) through the light anode with the electrochemical method ZnO porous membrane that deposits organic dyestuff I after treatment described above and platinum of the same area to together with electrode assembling, middle perfusion redox electrolytes liquid, its proportioning is 0.5 mol/L LiI, 0.05 mol/L I
2, solvent is acetonitrile, can obtain DSSC.
Preparation method of the present invention, wherein electro-conductive glass cleans with cleaning solution in step (1), then uses distilled water ultrasonic cleaning, after oven dry at acetone, each ultrasonic cleaning 15 min in ethanolic solution, electro-conductive glass is placed on that in aqueous isopropanol, to soak 24 h above for subsequent use.
Preparation method of the present invention, wherein zinc silk abrasive paper for metallograph grinding process in step (2).
Preparation method of the present invention, wherein in step (2), electrochemical method activation refers to: be-1.0 V at applied voltage, electrolyte is constant potential 10 min in 0.1 mol/L KCl, makes conductive glass surface activation, for the nucleation process of next step electro-deposition provides active site.
Preparation method of the present invention, wherein in step (2), under-1.0 V, electro-deposition obtains organic dyestuff I and receives the film on brilliant surface at ZnO, and its structure is ZnO/ organic dyestuff I.
Preparation method of the present invention, wherein in step (2), under-0.8 V, electro-deposition can obtain organic dyestuff I and receives the structure of intracrystalline portion at ZnO, being that organic dyestuff I is present in inside nanoparticles, is the compound nano-crystal thin-film that ZnO/ organic dyestuff I/ inside includes the ZnO of organic dyestuff I in conjunction with first then obtaining structure at-0.8 V continuous electrochemical Energy Deposition at-1.0 V.
The present invention further discloses and to have adopted DSSC prepared by said method in the application improving aspect the electricity conversion of battery.
This new structure nano-crystal thin-film structure disclosed in this invention is interior zinc oxide nano crystalline substance/organic dyestuff I/ external oxidation zinc thin layer/organic dyestuff II.By two kinds of dyestuffs (organic dyestuff I and organic dyestuff II) that between selection uptake zone, difference and energy level match, realize organic dyestuff I and pass through the machine-processed transferring energy of Forster resonant energy transfer (FRET) to organic dyestuff II, then organic dyestuff II injects light induced electron to internal layer zinc oxide, thereby expand the spectral response range of dye sensitization nano-crystal composite film electrode, and then improve the photoelectric conversion efficiency of this battery.Technical problem to be solved by this invention is how to prepare the dye sensitization nano-crystal thin-film of this new structure.In preparing the deposit fluid of zinc-oxide film, electro-deposition method adds organic dyestuff, by changing sedimentary condition, as the condition such as kind and addition of deposition voltage, dyestuff, can realize micro-structural and the pattern of controlling nano-crystal thin-film, control the position of dyestuff at nano-crystal thin-film.Receiving intracrystalline portion and the brilliant surperficial codeposition of receiving as realized organic dyestuff.
The present invention is taking organic dyestuff I(eosin), organic dyestuff II(rhodamine B) be exemplary further instruction in addition:
A kind of dye sensitization ZnO nano-crystal porous film electrode, is characterized in that it is to be attached on electro-conductive glass and to be formed by interior zinc oxide nano crystalline substance/organic dyestuff I/ external oxidation zinc thin layer/organic dyestuff II; Wherein organic dyestuff I is eosin, and organic dyestuff II is rhodamine B.
The preparation method of the DSSC of new structure, is characterized in that the preparation of light anode, completes in accordance with the following steps:
(1) by electro-conductive glass (FTO) cut-parts, clean, soak; Electro-conductive glass cleans with cleaning solution, then uses distilled water ultrasonic cleaning, after oven dry at acetone, each ultrasonic cleaning 15 min in ethanolic solution, electro-conductive glass is placed on that in aqueous isopropanol, to soak 24 h above for subsequent use.
(2) get the electro-conductive glass that a slice was soaked, dry up, in 70 DEG C of water-baths, activate 10 min with electrochemical method, then in a glassware, add the zinc nitrate of 10-20 mL 0.05 mol/L and the potassium chloride mixed solution of 0.1mol/L, make work electrode with electro-conductive glass, zinc silk is done electrode, saturated calomel electrode is made reference electrode, under-1.0 V and two voltages of-0.8 V, carries out electrochemical deposition, and sedimentation time is respectively 35-65 min and 5 min, while starting to deposit, under the V condition of constant voltage-1.0 when electrochemical deposition 5 min, with liquid-transfering gun to the eosin solution 400-600 μ L that adds 800-1000 μ mol/L in above-mentioned mixed solution, then absorption electro-deposition being obtained has the zinc oxide porous film of eosin under 100 DEG C of temperature conditions, constant temperature 30 min, immersed concentration and be in the rhodamine B ethanol solution of 0.5 mmol/L and left standstill 12 h, then take out with after redistilled water cleaning, dry up with cold wind, make rhodamine B-sensitized on ZnO/ eosin/ZnO combination electrode surface, forming structure is two dye sensitization nano-crystal thin-film electrodes of ZnO/ eosin/ZnO/ rhodamine B,
Described zinc silk abrasive paper for metallograph grinding process.Described electrochemical method activation is to be-1.0 V at applied voltage, and electrolyte is constant potential 10 min in 0.1 mol/L KCl, makes conductive glass surface activation, for the nucleation process of next step electro-deposition provides active site.Under-1.0 V, electro-deposition obtains eosin and is receiving the film on brilliant surface simultaneously, and its structure is ZnO/ eosin.Then under-0.8 V, electro-deposition can obtain eosin and receive the structure of intracrystalline portion, be that eosin is present in inside nanoparticles, in conjunction with first then obtaining at-0.8 V continuous electrochemical Energy Deposition the compound nano-crystal thin-film that structure is ZnO/ eosin/inside zinc oxide of including eosin at-1.0 V.
(3) preparation of redox electrolytes liquid, its proportioning is 0.5 mol/L LiI, 0.05 mol/L I
2, solvent is acetonitrile;
(4) through the light anode with the electrochemical method zinc oxide porous film that deposits eosin after treatment described above and platinum of the same area to together with electrode assembling, middle perfusion redox electrolytes liquid, can obtain DSSC.
Organic dyestuff I of the present invention is taking eosin as representative, but is not limited only to eosin dyestuff.May be also fluorescein, merbromin, phloxine B, Erythrosin B, it is red etc. that Meng Jia draws.
Eosin has following structural formula:
Described organic dyestuff II is taking rhodamine B as representative, but is not limited only to rhdamine B.May be also methyl blue, side's acid etc.Rhodamine B has following structural formula:
The present invention has the following advantages and beneficial effect:
1, the present invention is by organic dyestuff I(eosin) with organic dyestuff II(rhodamine B) three-dimensional cooperated-sensitization effect, the spectral response range of expansion DSSC, thus improve the electricity conversion of battery.
2, technique of the present invention is simple, and electrodeposition process is prepared Zinc oxide film, low cost, and large area, pollution-free, be conducive to industrially scalable application in the future.
brief description of the drawings:
Fig. 1 is that semiconductor is received the energetics and structures transmission of crystalline substance/dyestuff I/ semiconductor lamella/dyestuff II and electronics, hole and shifted schematic diagram.
embodiment:
Below in conjunction with specific embodiment, the present invention will be further described, and following each embodiment is not only limitation of the present invention for the present invention is described.Wherein chemical reagent used has commercially availablely, and eosin used, rhodamine B also have commercially available.
Embodiment 1
A preparation method for the DSSC of new structure, comprises the following steps:
(1) electro-conductive glass (FTO) is used to glass cutter cut-parts, then uses distilled water ultrasonic cleaning, after oven dry in acetone and ethanolic solution each ultrasonic cleaning 15 min, electro-conductive glass is placed on that in aqueous isopropanol, to soak 24 h above for subsequent use.
(2) get the electro-conductive glass that a slice was soaked, cold wind dries up, and in 70 DEG C of water-baths, activates 10 min with electrochemical method.Then in a glassware, add the zinc nitrate of 15 mL 0.05mol/L and the potassium chloride mixed solution of 0.1 mol/L, make work electrode with electro-conductive glass, zinc silk is done electrode, saturated calomel electrode is made reference electrode, respectively successive sedimentation 35 min and 5 min under-1.0 V and-0.8 V deposition voltage.While starting to deposit, under the V condition of constant voltage-1.0 when electrochemical deposition 5 min, with liquid-transfering gun to the eosin solution 500 μ L that add 900 μ mol/L in above-mentioned mixed solution.
(3) absorption electro-deposition being obtained has the zinc oxide porous film of eosin under 100 DEG C of temperature conditions, constant temperature 30 min, immersed concentration and be in the rhodamine B ethanol solution of 0.5 mmol/L and left standstill 12 h, after then taking out and cleaning with redistilled water, dried up with cold wind.
(4) preparation of redox electrolytes liquid, its proportioning is 0.5 mol/L LiI, 0.05 mol/L I
2, solvent is acetonitrile.
(5) through the light anode with the electrochemical method zinc oxide porous film that deposits eosin after treatment described above and platinum of the same area to together with electrode assembling, (its proportioning is 0.5 mol/L LiI to the above-mentioned second eyeball redox electrolytes liquid of middle perfusion, 0.05 mol/L I
2, solvent is acetonitrile), can obtain DSSC.
Embodiment 2
A preparation method for the DSSC of new structure, its step is identical with embodiment 1, and difference is:
Get the electro-conductive glass that a slice was soaked, cold wind dries up, and in 70 DEG C of water-baths, activates 10 min with electrochemical method.Then in a glassware, add the zinc nitrate of 15 mL0.05 mol/L and the potassium chloride mixed solution of 0.1 mol/L, make work electrode with electro-conductive glass, zinc silk is done electrode, saturated calomel electrode is made reference electrode, respectively successive sedimentation 45 min and 5 min under-1.0 V and-0.8 V deposition voltage.While starting to deposit, under the V condition of constant voltage-1.0 when electrochemical deposition 5 min, with liquid-transfering gun to the eosin solution 500 μ L that add 900 μ mol/L in above-mentioned mixed solution.The absorption that electro-deposition is obtained has the zinc oxide porous film of eosin under 100 DEG C of temperature conditions, constant temperature 30 min, immersed concentration and be in the rhodamine B ethanol solution of 0.5 mmol/L and left standstill 12 h, after then taking out and cleaning with redistilled water, dried up with cold wind.
Embodiment 3
A preparation method for the DSSC of new structure, its step is identical with embodiment 1,2, and difference is:
Get the electro-conductive glass that a slice was soaked, cold wind dries up, and in 70 DEG C of water-baths, activates 10 min with electrochemical method.Then in a glassware, add the zinc nitrate of 15 mL0.05 mol/L and the potassium chloride mixed solution of 0.1 mol/L, make work electrode with electro-conductive glass, zinc silk is done electrode, saturated calomel electrode is made reference electrode, respectively successive sedimentation 65 min and 5 min under-1.0 V and-0.8 V deposition voltage.While starting to deposit, under the V condition of constant voltage-1.0 when electrochemical deposition 5 min, with liquid-transfering gun to the eosin solution 500 μ L that add 900 μ mol/L in above-mentioned mixed solution.The absorption that electro-deposition is obtained has the zinc oxide porous film of eosin under 100 DEG C of temperature conditions, constant temperature 30 min, immersed concentration and be in the rhodamine B ethanol solution of 0.5 mmol/L and left standstill 12 h, after then taking out and cleaning with redistilled water, dried up with cold wind.
Wherein said organic dyestuff I is eosin, fluorescein, and merbromin, phloxine B, Erythrosin B or Meng Jia draw red; Organic dyestuff II is rhodamine B, methyl blue or side's acid.
Comparative example 1
The present embodiment provides the preparation method of the DSSC of only having a kind of dye coating structure, and its step is identical with embodiment 1,2,3, and difference is:
Get the electro-conductive glass that a slice was soaked, cold wind dries up, and in 70 DEG C of water-baths, activates 10 min with electrochemical method.Then in a glassware, add 15 zinc nitrates of mL 0.05 mol/L and the potassium chloride mixed solution of 0.1 mol/L, make work electrode with electro-conductive glass, zinc silk is done electrode, saturated calomel electrode is made reference electrode, respectively successive sedimentation 35 min and 5 min under-1.0 V and-0.8 V deposition voltage.While starting to deposit, under the V condition of constant voltage-1.0 when electrochemical deposition 5 min, with liquid-transfering gun to the eosin solution 500 μ L that add 900 μ mol/L in above-mentioned mixed solution.The absorption that electro-deposition is obtained has the zinc oxide porous film of eosin under 100 DEG C of temperature conditions, constant temperature 30 min, and cool to room temperature is standby to be surveyed.
Comparative example 2
The present embodiment provides the preparation method of the DSSC of only having a kind of dye coating structure, and its step is identical with comparative example 1, and difference is:
Get the electro-conductive glass that a slice was soaked, cold wind dries up, and in 70 DEG C of water-baths, activates 10 min with electrochemical method.Then in a glassware, add 15 zinc nitrates of mL 0.05 mol/L and the potassium chloride mixed solution of 0.1 mol/L, make work electrode with electro-conductive glass, zinc silk is done electrode, saturated calomel electrode is made reference electrode, respectively successive sedimentation 45 min and 5 min under-1.0 V and-0.8 V deposition voltage.While starting to deposit, under the V condition of constant voltage-1.0 when electrochemical deposition 5 min, with liquid-transfering gun to the eosin solution 500 μ L that add 900 μ mol/L in above-mentioned mixed solution.The absorption that electro-deposition is obtained has the zinc oxide porous film of eosin under 100 DEG C of temperature conditions, constant temperature 30 min, and cool to room temperature is standby to be surveyed.
Subordinate list 1 is embodiment 1,2,3 test result,
Dye sensitization ZnO nano-crystal porous film electrode and the DSSC of platinum to electrode assembling that subordinate list 1 uses electrodeposition process of the present invention to prepare
The dye sensitization ZnO nano-crystal porous film electrode that subordinate list 2 uses electrodeposition process of the present invention to prepare
With the DSSC of platinum to electrode assembling and the comparison of conventional solar cell
Conclusion:
Use the DSSC of the present invention's assembling and the comparison of conventional solar cell, from table, can significantly find out, adopt dye sensitization ZnO nano-crystal porous film electrode prepared by method of the present invention can significantly improve the electricity conversion of DSSC.
The present invention is not limited in specific embodiment, and described organic dyestuff I can also be fluorescein, merbromin; phloxine B, Erythrosin B, it is red etc. that Meng Jia draws; described organic dyestuff II can also be methyl blue, side's acid etc., and every any improvement in aim of the present invention all falls into protection scope of the present invention.
Claims (9)
1. a dye sensitization ZnO nano-crystal porous film electrode, is characterized in that it is to be attached on electro-conductive glass and to be formed by interior zinc oxide nano crystalline substance/organic dyestuff I/ external oxidation zinc thin layer/organic dyestuff II.
2. dye sensitization ZnO nano-crystal porous film electrode claimed in claim 1, wherein said organic dyestuff I is eosin, fluorescein, merbromin, phloxine B, Erythrosin B or Meng Jia draw red; Organic dyestuff II is rhodamine B, methyl blue or side's acid.
3. adopt dye sensitization ZnO nano-crystal porous film electrode to prepare a method for solar cell, it is characterized in that being undertaken by following step: (1) electro-conductive glass processing: by electro-conductive glass cut-parts, clean, soak;
(2) preparation of dye sensitization ZnO nano-crystal porous film electrode;
Get the electro-conductive glass that a slice was soaked, dry up, in 70 DEG C of water-baths, activate 10 min with electrochemical method, then in a glassware, add the zinc nitrate of 10-20 mL 0.05 mol/L and the potassium chloride mixed solution of 0.1 mol/L, make work electrode with electro-conductive glass, zinc silk is done electrode, saturated calomel electrode is made reference electrode, under-1.0 V and two voltages of-0.8 V, carries out electrochemical deposition, and sedimentation time is respectively 35-65 min and 5 min, while starting to deposit, first electrochemical deposition 5 min ZnO compacted zones under the V condition of constant voltage-1.0, then with liquid-transfering gun to the organic dyestuff I solution 400-600 μ L that adds 800-1000 μ mol/L in above-mentioned mixed solution, then absorption electro-deposition being obtained has the ZnO porous membrane of organic dyestuff I under 100 DEG C of temperature conditions, constant temperature 30 min, immersed concentration and be in the organic dyestuff II ethanol solution of 0.5 mmol/L and left standstill 12 h, then take out with after redistilled water cleaning, dry up with cold wind, make organic dyestuff II sensitization on ZnO/ organic dyestuff I/ZnO combination electrode surface, forming structure is two dye sensitization nano-crystal thin-film electrodes of ZnO/ organic dyestuff I/ZnO/ organic dyestuff II,
(3) preparation of redox electrolytes liquid; Its proportioning is 0.5 mol/L LiI, 0.05 mol/L I
2, solvent is acetonitrile;
(4) through the light anode with the electrochemical method ZnO porous membrane that deposits organic dyestuff I after treatment described above and platinum of the same area to together with electrode assembling, middle perfusion redox electrolytes liquid, its proportioning is 0.5 mol/L LiI, 0.05 mol/L I
2, solvent is acetonitrile, can obtain DSSC.
4. preparation method claimed in claim 3, wherein electro-conductive glass cleans with cleaning solution in step (1), then uses distilled water ultrasonic cleaning, after oven dry at acetone, each ultrasonic cleaning 15 min in ethanolic solution, electro-conductive glass is placed on that in aqueous isopropanol, to soak 24 h above for subsequent use.
5. preparation method claimed in claim 2, wherein zinc silk abrasive paper for metallograph grinding process in step (2).
6. preparation method claimed in claim 2, wherein in step (2), electrochemical method activation refers to: be-1.0 V at applied voltage, electrolyte is constant potential 10 min in 0.1 mol/L KCl, makes conductive glass surface activation, for the nucleation process of next step electro-deposition provides active site.
7. preparation method claimed in claim 2, wherein in step (2), under-1.0 V, electro-deposition obtains organic dyestuff I and receives the film on brilliant surface at ZnO, and its structure is ZnO/ organic dyestuff I.
8. preparation method claimed in claim 2, wherein in step (2), under-0.8 V, electro-deposition can obtain organic dyestuff I and receives the structure of intracrystalline portion at ZnO, being that organic dyestuff I is present in inside nanoparticles, is the compound nano-crystal thin-film that ZnO/ organic dyestuff I/ inside includes the ZnO of organic dyestuff I in conjunction with first then obtaining structure at-0.8 V continuous electrochemical Energy Deposition at-1.0 V.
9. the application of the DSSC that described in employing claim 3 prepared by method aspect the electricity conversion of raising battery.
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| CN106128773A (en) * | 2016-07-22 | 2016-11-16 | 合肥师范学院 | A kind of preparation method of rapidly and efficiently sunlight response ZnO porous membrane |
| CN107393722A (en) * | 2017-07-28 | 2017-11-24 | 浙江理工大学 | A kind of preparation method of graphene zinc oxide nano tube array dye-sensitized solar cell anode |
| US10407315B2 (en) | 2016-04-14 | 2019-09-10 | Seoul Semiconductor Co., Ltd. | Method and/or system for synthesis of zinc oxide (ZnO) |
| US10727374B2 (en) | 2015-09-04 | 2020-07-28 | Seoul Semiconductor Co., Ltd. | Transparent conductive structure and formation thereof |
| US10741724B2 (en) | 2015-10-02 | 2020-08-11 | Seoul Viosys Co., Ltd. | Light emitting diode devices with zinc oxide layer |
| US10981800B2 (en) | 2016-04-14 | 2021-04-20 | Seoul Semiconductor Co., Ltd. | Chamber enclosure and/or wafer holder for synthesis of zinc oxide |
| US10981801B2 (en) | 2016-04-14 | 2021-04-20 | Seoul Semiconductor Co., Ltd. | Fluid handling system for synthesis of zinc oxide |
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