CN106115603B - A kind of porous/quantum dot composite construction infrared detector unit and preparation method - Google Patents
A kind of porous/quantum dot composite construction infrared detector unit and preparation method Download PDFInfo
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- CN106115603B CN106115603B CN201610567772.2A CN201610567772A CN106115603B CN 106115603 B CN106115603 B CN 106115603B CN 201610567772 A CN201610567772 A CN 201610567772A CN 106115603 B CN106115603 B CN 106115603B
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title claims description 26
- 238000010276 construction Methods 0.000 title description 10
- 239000002131 composite material Substances 0.000 title description 9
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000011148 porous material Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 34
- 238000005516 engineering process Methods 0.000 claims description 18
- 239000010432 diamond Substances 0.000 claims description 10
- 229910003460 diamond Inorganic materials 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910021389 graphene Inorganic materials 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 3
- 229910021426 porous silicon Inorganic materials 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 2
- 238000005057 refrigeration Methods 0.000 abstract description 2
- 238000002835 absorbance Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000006056 electrooxidation reaction Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- PBZHKWVYRQRZQC-UHFFFAOYSA-N [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PBZHKWVYRQRZQC-UHFFFAOYSA-N 0.000 description 4
- 239000003610 charcoal Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000011358 absorbing material Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 229910017489 Cu I Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001931 thermography Methods 0.000 description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002113 nanodiamond Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0029—Transducers for transforming light into mechanical energy or viceversa
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00341—Processes for manufacturing microsystems not provided for in groups B81C1/00023 - B81C1/00261
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
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- Analytical Chemistry (AREA)
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Porous/quantum-dot structure infrared detector, including substrate are based on the present invention relates to one kind；Periodicity infrared acquisition cell array is set in the substrate, and the single infrared acquisition primitive includes the substrate being located in substrate and the porous structural film being grown on substrate, and the pore interior of the porous structural film is infrared-sensitive material quantum dot.By quantum dot as the infrared absorption layer film in bridge deck structure, loose structure is used as thermally sensitive layer film, enhance the ir-absorbance of infrared acquisition focal plane device, so that the detection efficient of non-refrigeration focal surface device is further lifted, the manufacturing process is simply controllable, stability and repeatability are high, and this production in enormous quantities to device has vital meaning.
Description
Technical field
The invention belongs to infrared detection technique field, and in particular to a kind of room temperature non-refrigerated infrared detector.
Technical background
Non-refrigeration focal surface infrared acquisition is a kind of non-refrigerated infrared detector of function admirable, because its is light, structure is simple
Singly and applied to technology in the various sensing technologies in the various fields such as national defence, space flight, medical science, production monitoring.Infrared detector
Be it is a kind of by infrared-sensitive material absorb infrared ray and hot-cast socket be electric signal powerful, be constitute infrared system and
The core component of thermal imaging system.At present, business market use infrared detector more by substrat structure, supporting construction and
Bridge deck structure is constituted.Light absorbing material and thermo-sensitive material characteristic wherein in bridge deck structure turn into the pass of restriction infrared acquisition efficiency
Key.Concentrated at present applied to the light absorbing material and thermistor material majority in micro- bridge deck structure of infrared detector
The materials such as PZT, vanadium oxide, polysilicon, infrared acquisition to some extent is realized by the design of device architecture.With modern red
External detector detects wave-length coverage and sensitivity requirement is improved constantly, the absorption selectivity and temperature-sensitive of original infrared absorbing material
The limitation of characteristic, the lifting for exploring the infrared detector based on new material and MEMS technology compatibility is just gradually taken seriously.
Quanta point material has quantum size effect and Energy levels characteristic, is often produced during photoelectric conversion new
Strange photoelectricity and receive much concern.The photodetector for being based particularly on quanta point material has shown excellent wide spectrum
Response, high sensitivity and high-responsivity characteristic.However, because often there are different journeys during preparation and storage in quantum dot
The reunion of degree, causing the excellent properties of quantum dot can not play.The kinds of decentralized control problems of quanta point material should as quantum dot
Bottleneck.In order to solve this common problem, based on before it is proposed that《A kind of porous nano diamond preparation method》
Patented technology and the hardness higher with diamond and good thermal conductance the characteristics of, it is proposed that this patent proposes that one kind is based on
The infrared detector and preparation technology of porous charcoal/quantum dot composite construction.
The content of the invention
The present invention can be increased substantially based on porous structural film as heat-conducting layer and supporting layer to be disperseed to quantum dot
Performance, using different size porous structural films as quantum dot dispersion layer, isolates to quantum dot, improves quantum dot and disperses
Property.At the same time, the characteristics of charcoal/silicon porous structural film has preferable thermal conduction characteristic and compatible MEMS silicon technologies, favorably
Heat conduction and focal plane process in photoelectric device.Porous membrane is grown in silicon nitrate substrate, by adjusting growth parameter(s)
Regulation can control thickness and the aperture of supporting layer, and ensure porous membrane surface smoothness., can be with by quantum spot printing cloth
It is disperseed well on loose structure, make device that there is high thermal conductivity and light absorbs, it is ensured that each pixel list
The integrity degree of member.
The present invention is directed to the technical characterstic of existing photodetector, it is desirable to provide a kind of infrared spy of porous/quantum-dot structure
Device is surveyed, technical scheme is as follows:
A kind of porous/quantum-dot structure infrared detector, it is characterised in that including substrate；The cycle is set in the substrate
Property infrared acquisition cell array, the single infrared acquisition primitive include be located at substrate on substrate and be grown on it is many on substrate
Pore structure film, the pore interior of the porous structural film is infrared-sensitive material quantum dot.
Further, ROIC integrated circuits are set in the substrate.The preferred silicon base of substrate.
Preferably, the substrate is silicon nitride or SOI.
Preferably, the material of the porous structural film is selected from：DLC, diamond, graphene, amorphous carbon.
Preferably, porous structural film size is 2-50 nanometers, 50-200 nanometers of film thickness.
Preferably, the infrared-sensitive material quantum dot is selected from PbS, PbSe, graphene, InP, CuInS, CuInSeS；
Quantum dot size is in 3-20 nanometer ranges.
Preferably, passivation encapsulated layer is also protected on the porous structural film surface.
The present invention also provides a kind of preparation method of porous charcoal/quantum-dot structure infrared detector, comprises the following steps:
1) in Grown porous structural film；
2) porous structural film is polished, it is ensured that the flatness of membrane structure；
3) the controllable infrared-sensitive material quantum dot of size is prepared；
4) infrared-sensitive material quantum dot is spun in the hole of porous structural film, dried；
5) array processing is carried out, periodicity infrared acquisition primitive is obtained.
Preferably, step 1) porous structural film using chemical vapour deposition technique prepare.
Preferably, step 2) it is polished using using oxygen plasma lithographic technique.Further preferably, oxygen plasma is carved
Power is lost at 100-400 watts, and etching speed is controlled in 2-5 nm/minutes.
Preferably, preparing infrared-sensitive material quantum dot using chemical synthesising technology.Further preferably, with solvent to amount
Son point progress is pre-dispersed, and quantum dot concentration (g/ml) is 6-20%, and solvent is water or ethanol.It is further preferred that using ultrasonic disperse 20
Minute, 20-80 watts of ultrasonic power.
Preferably, the step 4) in spin coating mode be spin coating spin coating, rotary speed be 1000-5000 revs/min；Dry
Dry temperature 80-150, drying time is 0.5-1h.
Preferably, the step 5) in photoetching using development, exposure, RI E etching etc. array process technology.
Further, using photoetching, mask, burn into deposition and the technique such as electrochemical corrosion self-stopping technology prepare plain conductor with
Silicon substrate formation heat transfer device, realizes the preparation of non-brake method thermal infrared detector.
The present invention is applied to infrared thermal imaging device by making loose structure/quantum dot composite construction.The present invention is excellent
Point includes：
1. by adjusting porous membrane control parameter, adjustment porous membrane hole and thickness, and utilize oxygen plasma etching
Technology ensures porous membrane body structure surface flatness.Ensure the integrity degree of each pixel cell of image device.
2. solvent carries out pre-dispersed, and ultrasonic disperse 20 minutes to quantum dot, 20-80 watts of ultrasonic power reduces quantum dot
Reunite, be easy to spin coating to be film-made.
3. the present invention improves absorption to infrared light by quantum dot as light absorbing layer, improved by loose structure
The dispersiveness of quantum dot, prevents reuniting again for quantum dot, it is ensured that the smooth homogeneity of the optical window of each pixel cell.
Brief description of the drawings
Fig. 1 are the integrated electricity of substrate 2.ROIC of structural representation 1. based on porous/quantum dot composite construction infrared detector
The quantum dot 6. of road 3. substrate, 4. porous structural film 5. is passivated encapsulated layer；
Fig. 2 are the amounts of 1. 4. porous structural film of substrate 2.ROIC 3. substrates of integrated circuit of pixel cell structure schematic diagram 5.
Son point 6. is passivated encapsulated layer；
The porous diamonds of Fig. 3 and Fig. 4 and the electron scanning micrograph for loading quantum-dot structure.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail.
Quantum dot has very high absorption characteristic to infra-red radiation, and with reference to the temperature-sensing property of silicon substrate p-n junction, prepare can be with
The high sensitivity non-refrigerated infrared detector of CMOS and SOI-CMOS process compatibles.
The preparation method based on porous charcoal/quantum dot composite construction non-brake method thermal infrared detector that the present invention is provided, it is first
The Surface Creation silicon nitride of substrate 1 or SOI films of ROIC integrated circuits 2 first are being preset with as substrate 3, and light is passed through on substrate 3
Quarter, mask, etching and circuit technology formation reading circuit；Then porous structural film 4 is prepared on the surface of substrate 3 as support
Layer；Then the material of quantum dot 5 is deposited on the loose structure as light absorbing layer, then does a thin layer of sin and does passivation encapsulated layer
6；Plain conductor finally is prepared using techniques such as photoetching, mask, burn into deposition and electrochemical corrosion self-stopping technologies, non-brake method is realized
The preparation of thermal infrared detector.Non-brake method thermal infrared detector structure is as shown in Figure 1, 2, 3.
Embodiment 1
Non-brake method thermal infrared detector based on porous diamond/PbS quantum structure according to the embodiment of the present invention
Preparation method, this method comprises the following steps：
It is thin that step 1. makes porous diamond lattic structure by chemical vapor deposition or magnetron sputtering method on silicon nitrate substrate 3
Film 4, thickness control is at 50-200 nanometers；
Step 2. utilizes oxygen plasma lithographic technique, and porous structural film 4 is polished, and power is carved at 100-400 watts
Speed control is lost in 2-5 nm/minutes；
Step 3. solvent carries out ultrasonic disperse 20 minutes to PbS quantum 5,20-80 watts of ultrasonic power, spin coating film, turns
Fast 1500-3000,100 degree of drying；
Step 4. carries out the array patterns such as photoetching, mask, etching to porous diamond/quantum dot film；
100-200 nanometers of step 5. epitaxial growth silicon nitride layer carries out solidification envelope as passivation encapsulated layer 6 to composite construction
Dress, is checked device；
Finally plain conductor and and silicon are prepared using techniques such as photoetching, mask, burn into deposition and electrochemical corrosion self-stopping technologies
Substrate 1 has heat transfer device, realizes the preparation of non-brake method thermal infrared detector.
Embodiment 2
Non-brake method thermal infrared detector based on porous graphene/PbS quantum structure according to the embodiment of the present invention
Preparation method, this method comprises the following steps：
It is thin that step 1. makes on silicon nitrate substrate 3 porous graphene structure by chemical vapor deposition or magnetron sputtering method
Film 4, thickness control is at 50-200 nanometers；
Step 2. utilizes oxygen plasma lithographic technique, and porous structural film 4 is polished, and power is carved at 100-400 watts
Speed control is lost in 2-5 nm/minutes；
Step 3. solvent carries out ultrasonic disperse 20 minutes to PbS quantum 5,20-80 watts of ultrasonic power, spin coating film, turns
Fast 1500-3000,100 degree of drying；
Step 4. carries out the array patterns such as photoetching, mask, etching to porous diamond/quantum dot film；
100-200 nanometers of step 5. epitaxial growth silicon nitride layer carries out solidification envelope as passivation encapsulated layer 6 to composite construction
Dress, is checked device；
Finally plain conductor is prepared using techniques such as photoetching, mask, burn into deposition and electrochemical corrosion self-stopping technologies and silicon is served as a contrast
Bottom forms heat transfer device, realizes the preparation of non-brake method thermal infrared detector.
Embodiment 3
Preparation according to the non-brake method thermal infrared detector based on porous silicon/I nP quantum-dot structures of the embodiment of the present invention
Method, this method comprises the following steps：
Step 1. makes Porous Silicon structures film 4 by chemical vapor deposition or magnetron sputtering method on silicon nitrate substrate 3,
Thickness control is at 50-200 nanometers；
Step 2. utilizes oxygen plasma lithographic technique, and porous structural film 4 is polished, and power is carved at 100-400 watts
Speed control is lost in 2-5 nm/minutes；
Step 3. solvent carries out ultrasonic disperse 20 minutes to PbS quantum 5,20-80 watts of ultrasonic power, spin coating film, turns
Fast 1500-3000,100 degree of drying；
Step 4. carries out the array patterns such as photoetching, mask, etching to porous diamond/quantum dot film；
100-200 nanometers of step 5. epitaxial growth silicon nitride layer carries out solidification envelope as passivation encapsulated layer 6 to composite construction
Dress, is checked device；
Finally plain conductor is prepared using techniques such as photoetching, mask, burn into deposition and electrochemical corrosion self-stopping technologies and silicon is served as a contrast
Bottom forms heat transfer device, realizes the preparation of non-brake method thermal infrared detector.
Other embodiments
Embodiments of the present invention include but is not limited to embodiment 1-3, are directed to above step and make following change：
For step 1 by carry out respectively make different materials structure loose structure, such as diamond, DLC, graphene,
Silicon etc..Spin coating film, such as PbS, PbSe, graphene, I can be carried out for step 3 using variety classes and the quantum dot of size
The infrared-sensitive quantum dots such as nP, Cu I nS, Cu I nSeS.The material of above-mentioned porous structural film and quantum dot is selected
Arbitrary combination of two, the preparation method used can apply mechanically embodiment 1-3 method to realize, not limited by material category
System.
The above described is only a preferred embodiment of the present invention, any formal limitation not is made to the present invention, though
So the present invention is disclosed above with preferred embodiment, but is not limited to the present invention, any to be familiar with this professional technology people
Member, without departing from the scope of the present invention, when method and technology contents using the disclosure above make it is a little more
Equivalent embodiment that is dynamic or being modified to equivalent variations, as long as being the content without departing from technical solution of the present invention, according to the present invention's
Any simple modification, equivalent variations and modification that technical spirit is made to above example, still fall within technical solution of the present invention
In the range of.
Claims (9)
1. a kind of preparation method of porous/quantum-dot structure infrared detector, it is characterised in that porous/quantum-dot structure is infrared
Panel detector structure includes substrate；Periodicity infrared acquisition cell array, the single infrared acquisition primitive are set in the substrate
Including the substrate in substrate and the porous structural film being grown on substrate, the pore interior of the porous structural film is
Infrared-sensitive material quantum dot；
The preparation method of porous/quantum-dot structure infrared detector, comprises the following steps:
1) in Grown porous structural film；
2) porous structural film is polished, it is ensured that the flatness of membrane structure；
3) the controllable infrared-sensitive material quantum dot of size is prepared；
4) infrared-sensitive material quantum dot is spun in the hole of porous structural film, dried；
5) array processing is carried out, periodicity infrared acquisition primitive is obtained.
2. the preparation method of porous/quantum-dot structure infrared detector as claimed in claim 1, it is characterised in that the substrate
Interior setting ROIC integrated circuits.
3. the preparation method of porous/quantum-dot structure infrared detector as claimed in claim 1 or 2, it is characterised in that the lining
Bottom is silicon nitride or SOI.
4. the preparation method of porous/quantum-dot structure infrared detector as claimed in claim 1 or 2, it is characterised in that described many
The material of pore structure film is selected from：DLC, diamond, graphene, amorphous carbon or porous silicon.
5. the preparation method of porous/quantum-dot structure infrared detector as claimed in claim 1 or 2, it is characterised in that porous knot
Structure membrane pore size size is 2-50 nanometers, 50-200 nanometers of film thickness.
6. the preparation method of porous/quantum-dot structure infrared detector as claimed in claim 1 or 2, it is characterised in that described red
Outer sensitive material quantum dot is selected from PbS, PbSe, graphene, InP, CuInS, CuInSeS；Quantum dot size is in 3-20 nanometers of models
Enclose.
7. the preparation method of porous/quantum-dot structure infrared detector as claimed in claim 1, it is characterised in that step 1) institute
Porous structural film is stated to prepare using chemical vapour deposition technique.
8. the preparation method of porous as described in claim 1 or 7/quantum-dot structure infrared detector, it is characterised in that step 2)
It is polished using oxygen plasma lithographic technique.
9. the preparation method of porous as described in claim 1 or 7/quantum-dot structure infrared detector, it is characterised in that useization
Learn synthetic technology and prepare infrared-sensitive material quantum dot.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007234771A (en) * | 2006-02-28 | 2007-09-13 | Toyota Central Res & Dev Lab Inc | Quantum infrared sensor |
| CN102148098A (en) * | 2010-12-28 | 2011-08-10 | 华东师范大学 | Method for preparing quantum dot sensitized oxide film with broad spectral response |
| CN103117210A (en) * | 2013-03-12 | 2013-05-22 | 云南大学 | Novel self-assembly method of ordered Ge/Si quantum dot array by nano-pore replication and sputtering deposition |
| CN104167451A (en) * | 2014-07-07 | 2014-11-26 | 北京大学 | Infrared imaging detector carbon nanotube based on quantum dots and preparation method for the same |
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| US8816287B2 (en) * | 2008-01-14 | 2014-08-26 | Weinberg Medical Physics Llc | Structures for radiation detection and energy conversion using quantum dots |
| US20090217967A1 (en) * | 2008-02-29 | 2009-09-03 | International Business Machines Corporation | Porous silicon quantum dot photodetector |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007234771A (en) * | 2006-02-28 | 2007-09-13 | Toyota Central Res & Dev Lab Inc | Quantum infrared sensor |
| CN102148098A (en) * | 2010-12-28 | 2011-08-10 | 华东师范大学 | Method for preparing quantum dot sensitized oxide film with broad spectral response |
| CN103117210A (en) * | 2013-03-12 | 2013-05-22 | 云南大学 | Novel self-assembly method of ordered Ge/Si quantum dot array by nano-pore replication and sputtering deposition |
| CN104167451A (en) * | 2014-07-07 | 2014-11-26 | 北京大学 | Infrared imaging detector carbon nanotube based on quantum dots and preparation method for the same |
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