CN117525010B - Integrated packaged low-side switch chip and low-side switch device - Google Patents
Integrated packaged low-side switch chip and low-side switch device Download PDFInfo
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- CN117525010B CN117525010B CN202410018532.1A CN202410018532A CN117525010B CN 117525010 B CN117525010 B CN 117525010B CN 202410018532 A CN202410018532 A CN 202410018532A CN 117525010 B CN117525010 B CN 117525010B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 230000017525 heat dissipation Effects 0.000 claims abstract description 23
- 239000000919 ceramic Substances 0.000 claims abstract description 17
- 238000004806 packaging method and process Methods 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 230000002457 bidirectional effect Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The present disclosure relates to low-side switching technology, and in particular, to an integrated packaged low-side switching chip and a low-side switching device. The low-side switch chip of the integrated package is packaged into a frame; the low-side switch is arranged on the packaging frame and comprises a semiconductor power module, a first power tube and a second power tube, wherein the semiconductor power module is integrated with a first power tube and a second power tube which are connected in a common drain mode; the control module is bonded with the semiconductor power module and is integrated with a control unit; and the ceramic heat dissipation layer is arranged between the packaging frame and the low-side switch. The integrated packaged low-side switch chip has the advantages of small volume and good heat dissipation.
Description
Technical Field
The present disclosure relates to low-side switching technology, and in particular, to an integrated packaged low-side switching chip and a low-side switching device.
Background
When reverse current or reverse voltage occurs in the system application, the low-side switch of the unidirectional power tube can only bear by the unidirectional power tube, and is extremely easy to cause damage to devices, so that the prior art mostly uses a bidirectional conduction structure. However, the low-side switch chip in the prior art has the following problems: the loss and the temperature rise are increased due to the transverse current and the transverse resistance between the two power tubes in the bidirectional conduction structure; the power tube elements and the corresponding control circuits in the low-side switch chip are arranged in a scattered mode, the chip integration level is low, and the packaging area is large.
Disclosure of Invention
In order to solve at least one problem existing in the prior art, an object of the present application is to provide an integrated packaged low-side switch chip and low-side switch device, which have small chip size and good heat dissipation.
To achieve the above object, the present application provides an integrally packaged low-side switch chip, including:
a package frame;
the low-side switch is arranged on the packaging frame and comprises a semiconductor power module, a first power tube and a second power tube, wherein the semiconductor power module is integrated with a first power tube and a second power tube which are connected in a common drain mode; the control module is bonded with the semiconductor power module and is integrated with a control unit;
and the ceramic heat dissipation layer is arranged between the packaging frame and the low-side switch.
Further, a first metal layer and a first conductive carrying layer are sequentially arranged between the ceramic heat dissipation layer and the low-side switch.
Further, a second metal layer and a second conductive carrying layer are sequentially arranged between the ceramic heat dissipation layer and the packaging frame.
Further, the control module is arranged above the semiconductor power module.
Further, an insulating mounting layer is further arranged between the control module and the semiconductor power module.
Further, the control unit includes a first control circuit and a second control circuit.
Further, the first control circuit is bonded with the first power tube, and the second control circuit is bonded with the second power tube.
Further, the package frame includes:
the base island is bonded with the first power tube of the semiconductor power module;
a pin, comprising: the first pin is directly bonded with the base island; the second pin is bonded with the control module; and the third pin is bonded with the second power tube of the semiconductor power module.
Further, the semiconductor power module is provided with:
the first contact point of the power tube is connected with the source electrode of the first power tube;
the second contact point of the power tube is connected with the grid electrode of the second power tube;
the third contact point of the power tube is connected with the grid electrode of the first power tube;
the fourth contact point of the power tube is connected with the drain electrode of the first power tube;
the fifth contact point of the power tube is connected with the drain electrode of the second power tube;
the control module is provided with; control the first contact point, control the second contact point, control the third contact point, control the fourth contact point, control the fifth contact point, control the sixth contact point, and control the seventh contact point;
the power tube first contact point is bonded with the control first contact point through a connecting component, the power tube third contact point is bonded with the control sixth contact point through a connecting component, the power tube fourth contact point is bonded with the control seventh contact point through a connecting component, the power tube second contact point is bonded with the control fourth contact point through a connecting component, the power tube fifth contact point is bonded with the control fifth contact point through a connecting component, the control second contact point is bonded with the first pin, and the control third contact point is bonded with the first pin.
To achieve the above object, the present application provides a low-side switching device comprising an integrally packaged low-side switching chip as described above.
The application provides an integrated package's low side switch chip, has set up ceramic heat dissipation layer, has solved the problem of insulating withstand voltage and thermal diffusivity.
The integrated packaged low-side switch chip integrates the first power tube and the second power tube on the semiconductor power module, integrates the first control circuit corresponding to the first power tube and the second control circuit corresponding to the second power tube on the control module, and performs stack packaging integration, so that the structure is greatly simplified, the volume of a finished product is reduced, and the integrated low-side switch chip is convenient to use in miniaturized electronic equipment.
The power tube is a first power tube and a second power tube which are connected in a back-to-back common-drain mode, and the power tube is safer and more effective when a control circuit is added to solve reverse current; meanwhile, in the process of starting the chip, the power tube can play a role in coping with the error starting operation and timely shutting down the chip, and the safety operation of the power tube is protected.
The utility model provides an integrated package's low side switch chip, power tube are fixed on covering the ceramic substrate of metal level through electrically conductive carrier layer, and the metal level has reduced transverse resistance, and heat dispersion is good simultaneously, with low costs.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
The accompanying drawings are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate and explain the application and do not limit it. In the drawings:
FIG. 1 is a top view of package routing for an integrated packaged low side switch chip of the present application;
FIG. 2 is a left side cross-sectional view of a package routing for the integrated packaged low side switch chip of the present application;
FIG. 3 is a cross-sectional view of a package wire-bonding front of the integrated packaged low-side switch chip of the present application;
FIG. 4 is a schematic diagram of a practical application of the integrally packaged low-side switch chip of the present application;
description of the drawings: the power module comprises a 10-base island, a 20-semiconductor power module, a 30-control module, a 40-insulation mounting layer, a 100-first pin, a 101-second pin, a 102-third pin, a 201-first power tube, a 202-second power tube, a 203-power tube first contact point, a 204-power tube second contact point, a 205-power tube third contact point, a 206-power tube fourth contact point, a 207-power tube fifth contact point, a 301-control first contact point, a 302-control second contact point, a 303-control third contact point, a 304-control fourth contact point, a 305-control fifth contact point, a 306-control sixth contact point, a 307-control seventh contact point, a 400-connecting member, a 501-first conductive mounting layer, a 502-second conductive mounting layer, a 601-first metal layer, a 602-second metal layer and a 70-ceramic heat dissipation layer.
Detailed Description
For a better understanding and explanation of the present application, the present application will be described in further detail below with reference to the drawings. The present application is not limited to these specific embodiments only. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the scope of the invention as defined by the appended claims.
It should be noted that in the following detailed description, numerous specific details are set forth. It will be understood by those skilled in the art that the present application may be practiced without these specific details. In the following description of various embodiments, well-known principles, structures and components are not described in detail in order to facilitate a salient point of the subject matter of the present application.
As the operating environment of electronic devices becomes more complex, protection of the corresponding switching devices of the electronic devices becomes more important. The low-side switch in the switching device is usually mainly a unidirectional power tube, which also leads to the fact that when reverse current or reverse voltage occurs in the application of the system, the low-side switch can only be born by the unidirectional power tube, and the device is extremely easy to damage.
Therefore, the prior art mostly uses a bidirectional conduction structure. However, the low-side switch chip in the prior art has the following problems: the loss and the temperature rise are increased due to the transverse current and the transverse resistance between the two power tubes in the bidirectional conduction structure; the power tube elements and the corresponding control circuits in the low-side switch chip are arranged in a scattered mode, the chip integration level is low, and the packaging area is large.
The traditional low-side switch chip is packaged by fixing the chip on a frame by using insulating glue, so that the transverse resistance between the drain terminal interconnection of two power devices cannot be reduced, and the heat dissipation performance is poor; although the back gold can solve the problem of overlarge transverse resistance and has good heat dissipation performance, the back gold is expensive and has overhigh cost.
In order to solve the above technical problems, the present application provides an integrally packaged low-side switch chip and a low-side switch device, and the integrally packaged low-side switch chip and low-side switch device will be described in detail below with reference to specific embodiments.
Example 1
The embodiment 1 of the application provides an integrated packaged low-side switch chip, which has small chip size, good heat dissipation performance and low cost. The integrally packaged low-side switch chips of the present application are described in detail below with reference to fig. 1-4:
referring to fig. 1, an integrally packaged low-side switch chip, comprising:
a package frame;
the low-side switch is arranged on the packaging frame and comprises a semiconductor power module 20, a first power tube 201 and a second power tube 202, wherein the first power tube 201 and the second power tube 202 are integrated with common-drain connection; a control module 30 bonded to the semiconductor power module 20 and integrated with a control unit;
the ceramic heat dissipation layer 70 is disposed between the package frame and the low-side switch.
In this embodiment, the control module 30 is located above the second power tube 202.
In other embodiments, because the information interaction between the control module 30 and the semiconductor power module 20 is connected in a wired relationship, i.e. the connection member 400, the position of the control module 30 is not limited to the second power tube 202, but may be placed on the whole semiconductor power module 20; however, in this embodiment, in order to minimize the wire bonding length, the contact point is more reasonably arranged, so that the wire bonding problem is considered and the wire bonding problem is only designed on the second power tube 202. The position of the control module 30 may be adaptively adjusted to try to minimize the impact of routing if the demand changes, or when the contact point changes.
Referring to fig. 1 and 4, in the present embodiment, the control unit of the control module 30 is divided into two parts A, B, and the two parts A, B are respectively bonded to the second power tube 202 and the first power tube 201, respectively, corresponding to the second control circuit for controlling the second power tube 202 and the first control circuit for controlling the first power tube 201.
In this embodiment, the package frame includes:
a base island 10 bonded to the first power tube 201 of the semiconductor power module 20;
a pin, comprising: a first lead 100 directly bonded to the base island 10; a second lead 101 bonded to the control module 30; the third lead 102 is bonded to the second power tube 202 of the semiconductor power module 20.
Wherein the first power tube 201 is bonded with the island 10 of the package frame through the connection member 400, the second power tube 202 is bonded with the third lead 102 of the package frame through the connection member 400,
it will be appreciated that the islands 10 are made of a conductive material.
The semiconductor power module 20 is provided with:
the power tube first contact point 203 is connected with the source electrode of the first power tube 201;
a power tube second contact 204 connected to the gate of the second power tube 202;
a third contact point 205 of the power tube is connected with the grid electrode of the first power tube 201;
a fourth contact 206 of the power tube, which is connected to the drain of the first power tube 201;
a fifth power tube contact 207 connected to the drain of the second power tube 202;
the control module 30 is provided with a control first contact point 301, a control second contact point 302, a control third contact point 303, a control fourth contact point 304, a control fifth contact point 305, a control sixth contact point 306 and a control seventh contact point 307.
The package frame is composed of a base island 10 and first, second and third leads 100, 101 and 102.
The first contact point 203 of the power tube is bonded with the first contact point 301 of the control module 30 through a connecting member 400, the third contact point 205 of the power tube is bonded with the sixth contact point 306 of the control module 30 through a connecting member 400, the fourth contact point 206 of the power tube is bonded with the seventh contact point 307 of the control module 30 through a connecting member 400, the second contact point 204 of the power tube is bonded with the fourth contact point 304 of the control module 30 through a connecting member 400, the fifth contact point 207 of the power tube is bonded with the fifth contact point 305 of the control module 30 through a connecting member 400, the second contact point 302 of the control module 30 is bonded with the first lead 100 of the package frame, and the third contact point 303 of the control module 30 is bonded with the first lead 100 of the package frame.
The connection member 400 is a wire, and different connection members 400 are used for bonding at different positions.
It should be noted that, the specific number and positions of the contact points can be adaptively designed according to the actual functional requirement of the chip and the rationality of the bonding of the wire bonds of the contact points, and the distance between the wires needs to be controlled under certain extreme working conditions, so that the positions of the contact points can be flexibly changed.
Referring to fig. 2-3, a ceramic heat dissipation layer 70 is disposed between a base island 10 of the package frame and the low-side switch, and a second metal layer 602 and a second conductive mounting layer 502 are sequentially disposed between the ceramic heat dissipation layer 70 and the base island 10 of the package frame; a first metal layer 601 and a first conductive mounting layer 501 are provided in this order between the ceramic heat dissipation layer 70 and the low-side switching circuit.
Specifically, the power tube 20 is fixed to the first metal layer 601 through the first conductive mounting layer 501, and the second metal layer 602 is fixed to the base island 10 through the second mounting layer 502.
In the present embodiment, the control module 30 is fixed to the second power tube 202 of the power tube 20 via the insulating mounting layer 40.
In this embodiment, the ceramic heat dissipation layer 70 is made of a ceramic material, which has many advantages such as strong insulation performance, strong mechanical stress, high thermal conductivity, and excellent corrosion resistance, and in this embodiment, the ceramic heat dissipation layer is creatively used as a material of the package substrate, so that the insulation and pressure resistance problem is ensured, and the problem of poor heat dissipation of the traditional insulation material is solved.
In the present embodiment, the mounting layer serves as a fixing and connecting function, and is usually made of an adhesive material, and the insulating mounting layer 40 and the conductive mounting layer are made of different adhesive materials as needed.
Because the first metal layer 601 disposed on the ceramic heat dissipation layer 70 is connected with the power tube 20 through the first conductive mounting layer 501, the good conductivity of the metal reduces the lateral resistance between the two connected power tube drain ends, and the good heat conductivity of the metal also improves the heat dissipation of the whole chip.
Referring to fig. 4, fig. 4 is a schematic diagram of practical application of the integrated packaged low-side switch chip of the present application; as shown in the figure, the control module 30 is divided into A, B two parts, namely a second control circuit for controlling the second power tube 202 and a first control circuit for controlling the first power tube 201.
In the part A, the fourth contact point 304 is a signal for controlling the gate end of the second power tube 202 and is connected with the second contact point 204 of the power tube; the fifth contact 305 is controlled to be connected to the fifth contact 207 of the power tube, and the fifth contact 207 of the power tube is a signal of the drain terminal of the second power tube 202.
In the part B, the sixth contact point 306 is a signal for controlling the gate end of the first power tube 201, and is connected with the third contact point 205 of the power tube; the seventh contact 307 of the control module 30 is connected to the fourth contact 206 of the power tube, and the fourth contact 206 of the power tube is a signal of the drain terminal of the first power tube 201, so as to control the first contact 301 to be connected to the first contact 203 of the power tube.
According to the invention, the first power tube 201 and the second power tube 202 of the power tube 20 are controlled separately, and the contact points of the control parts are connected with the grid, the source and the drain of the power tube, so that the normal opening protection of the low-side switch is realized.
It can be understood that the basis of the two power tubes being integrated on the same device is a process, the control circuit adopts an SOI process, and different choices of the reference ground of the control module can be realized through isolation, so that independent designs of the respective control circuits can be developed respectively according to different functional requirements of the two power tubes.
The common drain connection of the first power tube 201 and the second power tube 202 in the semiconductor power module 20 can achieve a bidirectional conduction effect, and the first control circuit corresponding to the first power tube 201 and the second control circuit corresponding to the second power tube are integrated on the control module to be laminated, packaged and integrated, so that the structure is greatly simplified, the volume of a finished product is reduced, and the semiconductor power module is convenient to use in miniaturized electronic equipment.
It should be noted that, the embodiments of the present application are not limited to specific structures of the first control circuit and the second control circuit, and the first control circuit and the second control circuit may be conventional MOS transistor control circuits or control circuits with other specific structures.
In the present embodiment, the semiconductor power module 20, the first power tube 201 thereof can be used for the reverse current detection and protection function, and when the voltage reversal occurs, the control circuit of the B part enables the first power tube 201 to pull the gate potential thereof low, thereby closing the conduction channel of the first power tube 201; the opposite reverse bias of the body diode of the first power tube 201 also prevents the reverse current of the circuit when the channel is closed until the polarity of the circuit voltage is restored to the forward direction, the body diode is turned on first, the first power tube 201 is turned on again, the channel is opened, and the circuit returns to normal operation. The second power tube 202 is used for protecting function design when the chip is started, and is responsible for realizing functions such as current limiting, and when the circuit is started, the control circuit of the part A enables the second power tube 202 to be closed and tries to restart automatically, so that the safe operation of the power tube is ensured.
Example 2
Embodiment 2 of the present application provides a low-side switching device comprising an integrally packaged low-side switching chip as described above.
It is noted that the specific values mentioned above are only for the purpose of illustrating the implementation of the present application in detail as examples and should not be construed as limiting the present application. In other examples or embodiments or examples, other values may be selected according to the present application, without specific limitation.
Those of ordinary skill in the art will appreciate that: the foregoing description is only a preferred embodiment of the present application, and is not intended to limit the present application, but although the present application has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the technical solutions described in the foregoing embodiments, or that equivalents may be substituted for part of the technical features thereof. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims (8)
1. An integrally packaged low-side switch chip, comprising:
a package frame;
the low-side switch is arranged on the packaging frame and comprises a semiconductor power module, a first power tube and a second power tube, wherein the semiconductor power module is integrated with a first power tube and a second power tube which are connected in a common drain mode; the control module is bonded with the semiconductor power module and is integrated with a control unit, and the control unit comprises a first control circuit corresponding to the first power tube and a second control circuit corresponding to the second power tube;
the ceramic heat dissipation layer is arranged between the packaging frame and the low-side switch, and a first metal layer and a first conductive carrying layer are further arranged between the ceramic heat dissipation layer and the low-side switch in sequence.
2. The integrated packaged low-side switch chip of claim 1, wherein a second metal layer and a second conductive mounting layer are further disposed in sequence between the ceramic heat dissipation layer and the package frame.
3. The integrated packaged low-side switch chip of claim 1, wherein the control module is disposed above the semiconductor power module.
4. The integrated packaged low-side switch chip of claim 3, further comprising an insulating mounting layer disposed between the control module and the semiconductor power module.
5. The integrated packaged low-side switch chip of claim 1, wherein the first control circuit is bonded to the first power tube and the second control circuit is bonded to the second power tube.
6. The integrally packaged low-side switch chip of claim 1, wherein said package frame comprises:
the base island is bonded with the first power tube of the semiconductor power module;
a pin, comprising: the first pin is directly bonded with the base island; the second pin is bonded with the control module; and the third pin is bonded with the second power tube of the semiconductor power module.
7. The integrated packaged low-side switch chip of claim 6, wherein the semiconductor power module has disposed thereon:
the first contact point of the power tube is connected with the source electrode of the first power tube;
the second contact point of the power tube is connected with the grid electrode of the second power tube;
the third contact point of the power tube is connected with the grid electrode of the first power tube;
the fourth contact point of the power tube is connected with the drain electrode of the first power tube;
the fifth contact point of the power tube is connected with the drain electrode of the second power tube;
the control module is provided with; control the first contact point, control the second contact point, control the third contact point, control the fourth contact point, control the fifth contact point, control the sixth contact point, and control the seventh contact point;
the power tube first contact point is bonded with the control first contact point through a connecting component, the power tube third contact point is bonded with the control sixth contact point through a connecting component, the power tube fourth contact point is bonded with the control seventh contact point through a connecting component, the power tube second contact point is bonded with the control fourth contact point through a connecting component, the power tube fifth contact point is bonded with the control fifth contact point through a connecting component, the control second contact point is bonded with the first pin, and the control third contact point is bonded with the first pin.
8. A low side switching device comprising: the low side switch chip of any one of claims 1-7.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410018532.1A CN117525010B (en) | 2024-01-05 | 2024-01-05 | Integrated packaged low-side switch chip and low-side switch device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410018532.1A CN117525010B (en) | 2024-01-05 | 2024-01-05 | Integrated packaged low-side switch chip and low-side switch device |
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| CN117525010A CN117525010A (en) | 2024-02-06 |
| CN117525010B true CN117525010B (en) | 2024-03-19 |
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| CN117083713A (en) * | 2021-03-26 | 2023-11-17 | 罗姆股份有限公司 | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers |
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| US6858996B2 (en) * | 2002-08-14 | 2005-02-22 | International Rectifier Corporation | Driver IC for use with simple microcontrol |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376669A (en) * | 2010-09-20 | 2012-03-14 | 成都芯源系统有限公司 | Semiconductor device with a plurality of transistors |
| CN113711351A (en) * | 2019-04-18 | 2021-11-26 | 日立能源瑞士股份公司 | Power semiconductor module with laser-welded lead frame |
| CN117083713A (en) * | 2021-03-26 | 2023-11-17 | 罗姆股份有限公司 | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers |
| CN115732479A (en) * | 2021-08-30 | 2023-03-03 | 德克萨斯仪器股份有限公司 | Power converter module |
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