CN117476578A - Chip radiator - Google Patents
Chip radiator Download PDFInfo
- Publication number
- CN117476578A CN117476578A CN202311693269.8A CN202311693269A CN117476578A CN 117476578 A CN117476578 A CN 117476578A CN 202311693269 A CN202311693269 A CN 202311693269A CN 117476578 A CN117476578 A CN 117476578A
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- CN
- China
- Prior art keywords
- channel
- chip
- radiator
- heat dissipation
- tsv
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000017525 heat dissipation Effects 0.000 claims abstract description 56
- 239000002826 coolant Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 5
- 238000005728 strengthening Methods 0.000 claims description 5
- 230000002708 enhancing effect Effects 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 2
- 239000011553 magnetic fluid Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 230000004907 flux Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
Abstract
The invention relates to a chip radiator, which comprises a chip body, a circuit substrate and a micro-channel radiating component. The micro-channel heat dissipation assembly comprises a channel heat radiator and a TSV channel. The micro-channel radiator is internally provided with a plurality of heat dissipation channels extending longitudinally or transversely, and cooling medium flows in the heat dissipation channels. The TSV channel enables the radiator to meet circuit connection between the chip and the circuit substrate, so that on one hand, veneering packaging of the radiator on the chip can be achieved, the volume of a packaged chip body is reduced, on the other hand, the distance between the radiator and the chip body is greatly reduced, thermal resistance is reduced, and heat dissipation of the chip is enabled to be more sufficient. Compared with the prior art, the radiator is directly covered on the surface of the chip body, and has the advantages of high radiating efficiency and small overall packaging size.
Description
Technical Field
The invention relates to the technical field of cooling, in particular to a chip radiator.
Background
With the development of high-end chips toward miniaturization and integration, the problem of heat dissipation has become an obstacle to the development of chips with higher performance. Therefore, development of an efficient heat dissipation system has been eager. At present, the heat flux density of the high heat flux chip can reach 1000w/cm 2 The traditional air cooling or liquid cooling device can not meet the heat dissipation requirement. The existing radiator is mainly installed outside the chip module package for radiating the chips. The chip of such a heat dissipating structure generally transfers heat to the package surface and then exchanges heat with the bottom or top of the heat sink through the package surface. This leads to an increase in the overall height of the device, on the one hand, and encapsulation, on the other handThe assembled device has a larger distance and solid obstruction with the radiator, and the thermal resistance between the radiator and the chip is increased. For the current high-power chip, the heat dissipation device has limited heat dissipation capability and can not effectively meet the heat dissipation requirement.
Patent CN106252309B discloses a microchannel liquid cooling radiator and cold conducting plug-in unit for high heat flux density chip, which reduces contact thermal resistance, improves heat exchange efficiency and is beneficial to heat dissipation of concentrated heat sources such as high heat flux density heating chip by arranging a microchannel heat dissipation structure with a plurality of heat dissipation teeth on one side surface of a chip packaging plate in a circulation cavity. However, the heat dissipation of the chip in this patent needs to be conducted to the filler between the package cover plate and the chip, then transferred to the package cover plate, and then transferred to the heat sink by the package cover plate, so that the heat exchange distance is increased, and the heat dissipation is insufficient.
Disclosure of Invention
The present invention is directed to a chip heat sink with more sufficient heat dissipation to overcome the above-mentioned drawbacks of the prior art.
The aim of the invention can be achieved by the following technical scheme:
the invention provides a chip radiator which comprises a chip body, a circuit substrate and a micro-channel radiating assembly.
Further, the microchannel heat sink assembly comprises:
the micro-channel radiator is a flat cuboid, and a plurality of longitudinally extending or transversely extending radiating channels are arranged in the cuboid, and each radiating channel is equidistantly separated by channel walls; or, the whole microchannel radiator is internally provided with heat dissipation strengthening columns which change the flow direction of the cooling medium and are used for strengthening the cooling efficiency, and the heat dissipation strengthening columns are uniformly distributed.
And TSV channels are embedded in walls between the channels of the micro-channel radiator.
Further, one TSV channel is provided every 3 heat dissipation channels.
Still further, the arrangement of the TSV channels is related to the chip body layout.
Further, the TSV channel is sequentially filled with an insulating layer, an isolating layer and a conducting layer from outside to inside.
Furthermore, the insulating layer is filled by means of chemical vapor deposition, and the chemical substances in a gaseous state or a vapor state are reacted and deposited on the micro-channel radiator in an atomic state by means of heating, plasma excitation and light radiation; the filling of the isolation layer is realized by adopting a physical method to vaporize the solid or liquid surface of the material into gaseous atoms, molecules or partial ionization into ions, and depositing the ions on the surface of the insulation layer by low-pressure gas; the conductive layer is filled by an electroplating method.
Further, the insulating layer is made of SiO 2 Or TiO 2 One or both of (a) and (b); the isolation layer is made of one or more of SiN, taN or TiN; the conducting layer is made of Cu.
Further, the bottom surface of the TSV channel is in contact with the upper surface of the chip body, and a lead is arranged above the TSV channel; one end of the lead is connected with the TSV channel, and the other end of the lead is connected with the circuit substrate.
Further, a welding pad which plays a role of stabilizing a lead is arranged above the TSV channel; the bond pad is slightly wider than the width of the TSV channel.
Further, a plurality of unit flow channels are arranged on the heat dissipation channel of the micro-channel heat radiator; the unit flow channel comprises a liquid inlet and a liquid outlet; the cooling medium flows through the heat dissipation channel; the cooling medium enters the heat dissipation channel through the liquid inlet and then flows out through the liquid outlet.
Further, the unit flow channel is a linear flow channel or a curved flow channel; and a heat dissipation reinforcing column for reinforcing cooling efficiency, which is used for changing the flow direction of the cooling medium, is arranged in the unit flow passage.
Further, the heat dissipation enhancement column is selected from one or more of a rib, a groove or a pin rib; the cooling medium is selected from one or more of water, ethanol, propylene glycol, ionic fluid, magnetic fluid, nano fluid or liquid metal.
Compared with the prior art, the invention has the following advantages:
(1) According to the invention, through the heat dissipation channel, when a cooling medium flows through the heat dissipation channel in the heat dissipation process, heat is directly transmitted to the bottom of the micro-channel radiator through the surface of the chip body, and then heat exchange is carried out between the cooling medium and the peripheral walls of the micro-channel in the radiator. Compared with the existing micro-channel radiator mode, the device is more reliable in operation. Meanwhile, the microchannel radiator is not easily affected by other substances in the air, and the equipment corrosion risk is small.
(2) According to the invention, the radiator is directly arranged on the surface of the chip body through the TSV channel process, heat generated by the chip body can be directly transferred to the radiator, and cooling liquid of the radiator is directly discharged to the outside, so that the heat dissipation efficiency is greatly improved. Meanwhile, the radiator is directly arranged on the surface of the chip body to encapsulate the surface of the chip body. The high power chip and the heat sink can be highly integrated together to form a multi-function device on the order of one millimeter. On the one hand, the volume of the packaged chip body can be reduced, and on the other hand, the gap between the radiator and the chip body is reduced, so that the radiator can directly act on the chip body, and the heat dissipation is more sufficient.
Drawings
FIG. 1 is a cross-sectional view of a chip heat spreader according to embodiment 1 of the present invention;
FIG. 2 is a perspective view of a chip heat spreader according to embodiment 1 of the present invention;
fig. 3 is a schematic view of a TSV channel structure according to embodiment 1 of the present invention;
FIG. 4 is a cross-sectional view of a chip heatsink with heat-dissipating studs according to embodiment 2 of the present invention;
FIG. 5 is a cross-sectional view of a heat spreader for chips according to embodiment 3 of the present invention;
fig. 6 is a perspective view of a heat sink for a chip according to embodiment 3 of the present invention.
The figure indicates:
1. a microchannel heat sink; 2. a chip body; 3. a circuit substrate; 4. a bonding pad; 5. a TSV channel; 5-1, an insulating layer; 5-2, an isolating layer; 5-3, a conductive layer; 6. a lead wire; 7. and a heat dissipation reinforcing column.
Detailed Description
The invention will now be described in detail with reference to the drawings and specific examples.
Example 1
The embodiment provides a chip radiator, as shown in fig. 1-3, which comprises a chip body 2, a circuit substrate 3 and a micro-channel heat dissipation assembly, wherein the micro-channel heat dissipation assembly, the chip body 2 and the circuit substrate 3 are sequentially arranged from top to bottom.
The microchannel heat sink assembly includes: the micro-channel radiator 1 is a flat cuboid, a plurality of longitudinally extending radiating channels are arranged in the cuboid, the radiating channels are arranged into linear flow channels, and each radiating channel is equidistantly separated by channel walls;
and the micro-channel radiator also comprises TSV channels 5, wherein the TSV channels 5 are embedded in the walls between the adjacent radiating channels of the micro-channel radiator 1. As shown in fig. 3, the TSV channels 5 are sequentially filled with an insulating layer 5-1, an insulating layer 5-2, and a conductive layer 5-3 from the outside to the inside. The insulating layer 5-1 is made of SiO 2 The isolation layer 5-2 is made of SiN, and the conductive layer 5-3 is made of Cu.
The bottom surface of the TSV channel 5 is in contact with the upper surface of the chip body 2, and a wire 6 is disposed above the TSV channel 5. One end of the lead wire 6 is connected with the TSV channel 5, and the other end is connected with the circuit substrate 3, so that the function of supplying power to the chip body 2 is achieved.
A bonding pad 4 which plays a role of stabilizing a lead wire 6 is arranged above the TSV channel 5; the bond pad 4 is wider than the width of the TSV channel 5.
The heat dissipation channel of the micro-channel heat radiator 1 comprises a liquid inlet and a liquid outlet; the cooling medium flows through the heat dissipation channel; the cooling medium enters the heat dissipation channel through the liquid inlet and then flows out through the liquid outlet.
The cooling medium is ethanol.
The channel heat dissipation assembly comprises a micro-channel heat radiator 1 and a TSV channel 5, wherein the micro-channel heat radiator 1, the chip body 2 and the circuit substrate 3 are sequentially arranged from top to bottom. When the chip body 2 is cooled, the cooling medium flows through the heat dissipation micro-channel, and at the moment, the cooling medium exchanges heat with the chip body 2 through the micro-channel radiator 1, so that heat of the chip body 2 is taken away.
In this process, since the TSV channel 5 makes the microchannel radiator 1 directly contact with the surface of the chip body 2, when the chip body 2 heats, heat is firstly conducted on the microchannel radiator 1 through the contact between the surface of the chip body 2 and the microchannel radiator 1, and then the heat is taken away by the cooling medium flowing in the heat dissipation channel, so that the heat dissipation effect is remarkable, and the heat dissipation requirement of the high-power chip body 2 can be effectively met.
Meanwhile, compared with the existing heat dissipation device, the TSV channel 5 and the micro-channel heat dissipation device provided by the invention have the advantages that the space requirement is small, and the operation of the whole device is more reliable.
Example 2
As shown in fig. 4, compared with embodiment 1, the heat dissipation enhancement column 7 is added, the heat dissipation enhancement column 7 is a rib, and the heat dissipation enhancement column 7 can destroy a thermal boundary layer to generate a turbulent flow effect, so as to realize the mixing of cold and hot fluid, thereby enhancing the convection heat exchange effect and improving the heat transfer performance of the micro-channel. Meanwhile, the TSV channel can be opened in the heat dissipation reinforced column 7, so that the applicability of the micro-channel is enhanced, and the TSV channel can be mounted on various chips.
Example 3
As shown in fig. 5 and 6, the whole microchannel radiator is internally provided with heat dissipation enhancing columns 7 for changing the flow direction of the cooling medium, and the heat dissipation enhancing columns are uniformly distributed, so that heat exchange between the fluids in the channels is more sufficient.
In conclusion, the invention has wide application prospect and economic benefit.
The previous description of the embodiments is provided to facilitate a person of ordinary skill in the art in order to make and use the present invention. It will be apparent to those skilled in the art that various modifications can be readily made to these embodiments and the generic principles described herein may be applied to other embodiments without the use of the inventive faculty. Therefore, the present invention is not limited to the embodiments described herein, and those skilled in the art, based on the present disclosure, should make improvements and modifications within the scope of the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the relevant art. These terms are used only for the purpose of describing specific examples and are not meant to limit the scope of the present application. The use of the terms "comprising," "having," and other variations thereof herein in the description, claims, and drawings are intended to be broadly, but not exclusively, inclusive.
In the description of the present invention, technical terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "downward", "circumferential", and the like indicate azimuth or positional relationship, and are based on the azimuth or positional relationship shown in the drawings. These terms are only used to facilitate describing embodiments of the present application and to simplify the description, and do not indicate or imply that the devices or elements must have a particular orientation in order to be constructed and operate in a particular manner. Therefore, it is not to be construed as limiting the embodiments of the present application.
Furthermore, it should be noted that, in the description of the present invention, unless explicitly stated and limited otherwise, the terms "mounted," "configured," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or physically connected. The specific meaning of the above terms in the present invention can be understood by those skilled in the art according to the specific circumstances.
Claims (10)
1. The chip radiator is characterized by comprising a chip body (2), a circuit substrate (3) and a micro-channel radiating component, wherein the micro-channel radiating component, the chip body (2) and the circuit substrate (3) are sequentially arranged from top to bottom.
2. The chip heat sink of claim 1, wherein the microchannel heat sink assembly comprises:
the micro-channel radiator (1) is a flat cuboid, a plurality of longitudinally or transversely extending radiating channels are arranged in the cuboid, and each radiating channel is equidistantly separated by channel walls;
and the TSV channels (5) are embedded in the walls between the adjacent heat dissipation channels of the micro-channel heat radiator (1).
3. A chip heat spreader according to claim 2, wherein the TSV channel (5) is filled with an insulating layer (5-1), an isolating layer (5-2) and a conductive layer (5-3) in order from outside to inside.
4. A chip heat sink according to claim 3, characterized in that the insulating layer (5-1) is of SiO 2 Or TiO 2 One or both of (a) and (b); the isolation layer (5-2) is made of one or more of SiN, taN or TiN; the conducting layer (5-3) is made of Cu.
5. A chip heat spreader according to claim 2, wherein the bottom surface of the TSV channel (5) is in contact with the upper surface of the chip body (2), and a lead (6) is disposed above the TSV channel (5); one end of the lead wire (6) is connected with the TSV channel (5), and the other end of the lead wire is connected with the circuit substrate (3).
6. A chip heat spreader according to claim 2, wherein a bonding pad (4) acting as a stabilizing lead (6) is arranged above the TSV channel (5); the width of the bonding pad (4) is wider than the width of the TSV channel (5).
7. A chip radiator according to claim 2, characterized in that the heat dissipation channel of the microchannel radiator (1) comprises a liquid inlet and a liquid outlet; the cooling medium flows through the heat dissipation channel; the cooling medium enters the heat dissipation channel through the liquid inlet and then flows out through the liquid outlet.
8. The chip heat sink of claim 7, wherein the cooling medium is selected from one of water, ethanol, propylene glycol, ionic fluid, magnetic fluid, nanofluid, or liquid metal.
9. The chip heat sink according to claim 7, wherein the heat dissipation channel is a linear flow channel or a curved channel; and the heat dissipation channel is internally provided with a heat dissipation strengthening column (7) which changes the flow direction of the cooling medium and is used for strengthening the cooling efficiency.
10. A chip heat sink according to claim 9, wherein the heat dissipation enhancing pillars (7) are selected from one or more of ribs, grooves or pin ribs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311693269.8A CN117476578A (en) | 2023-12-11 | 2023-12-11 | Chip radiator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311693269.8A CN117476578A (en) | 2023-12-11 | 2023-12-11 | Chip radiator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117476578A true CN117476578A (en) | 2024-01-30 |
Family
ID=89633159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311693269.8A Pending CN117476578A (en) | 2023-12-11 | 2023-12-11 | Chip radiator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117476578A (en) |
-
2023
- 2023-12-11 CN CN202311693269.8A patent/CN117476578A/en active Pending
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