CN117457795A - Solar cell base metal conductive electrode, preparation method and solar cell - Google Patents
Solar cell base metal conductive electrode, preparation method and solar cell Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
Abstract
The invention provides a solar cell base metal conductive electrode, a preparation method and a solar cell, wherein a silicon wafer with a surface covered with a protective film is selected as a silicon substrate, and the protective film is opened by laser to obtain a metal electrode laser opening pattern with a certain width and depth; then preparing a contact layer which is contacted with the silicon substrate by utilizing ink-jet printing, screen printing, vapor deposition or electroplating above the laser opening area, and electroplating or screen printing a base metal layer above the contact layer to serve as a main part of a base metal conductive electrode; and finally, electroplating or ink-jet printing a metal protective layer above the metal layer, and performing heat treatment to obtain the base metal conductive electrode of the solar cell. The method is compatible with the equipment of the existing battery production line, adopts base metal to replace silver electrode, reduces the production cost of the electrode, protects the diffusion of the base metal to the silicon substrate through the contact layer, reduces the surface recombination efficiency of the battery, and finally improves the photoelectric conversion efficiency of the battery.
Description
Technical Field
The invention belongs to the technical field of semiconductor materials, and particularly relates to a base metal conductive electrode of a solar cell, a preparation method of the base metal conductive electrode and the solar cell.
Background
The photovoltaic conductive paste is the most important auxiliary material of the photovoltaic cell, mainly is silver aluminum paste, the cost is inferior to that of a silicon wafer, the cost of the photovoltaic conductive paste in PERC and TOPCO cell structures is 10% -15% of the total cost of the cell, the cost of the HJT cell conductive paste is even up to 24% -30%, and the consumption of the silver paste is reduced mainly by a multi-main-grid technology and a reduced thin-grid width at present. Under the drive of cost reduction and efficiency improvement, in the hot spot problem of the current silicon-based solar cell research, the reduction of the use of noble metal slurry or the search of new base metal for replacing the noble metal slurry is an important direction of technical innovation, and becomes an important research direction of the current industrialized high-efficiency silicon-based solar cell.
Base metals are represented by copper and aluminum, and the adoption of a copper electrode electroplating technology to replace the current silver electrode is one of the photovoltaic technologies with the most potential for cost reduction at present. The advantages of copper electroplating are as follows: (1) Compared with the traditional screen printing technology of batteries such as TOPCon, HJT, IBC, the cost of 0.04 yuan/watt can be expected to be reduced at present, and the subsequent cost reduction space is considerable as copper electroplating equipment is mature gradually; (2) And compared with the traditional screen printing technology, the high-efficiency copper electroplating can achieve 0.3-0.5% of photoelectric conversion efficiency improvement. The copper electroplating process flow mainly comprises four steps: (1) seed layer preparation: in order to improve the contact and adhesion characteristics of the metal and the transparent conductive film, a seed layer is introduced to increase the adhesion between the electroplated metal and the TCO; (2) patterning: selectively obtaining electrode design patterns through a pattern transfer technology, wherein specific procedures comprise masking, exposure, development and the like; (3) metallization: inserting the battery piece into an electrolytic cell to reduce copper ions in the solution into copper metal, and completing copper precipitation which is a part of metallization; (4) post-treatment: the TCO layer is mainly removed by removing the photosensitive material and the seed layer, so that the TCO layer can be exposed. Among copper electroplating equipment, exposure and electroplating equipment are two major core equipment.
At present, although many factories and research institutions continuously improve copper electrode electroplating equipment and technology, the conventional copper electroplating equipment is complex, expensive and limited in yield, the copper electrode has low bonding force with a silicon substrate, and the factors of low oxidization stability of the copper electrode and the like always limit the large-scale application of the technology represented by the copper electrode in the preparation of photovoltaic cells.
Disclosure of Invention
The embodiment of the invention aims to provide a base metal conductive electrode of a solar cell, which strengthens the binding force with a silicon substrate through a contact layer, and covers a base metal layer to prevent oxidation.
The invention further aims at providing a preparation method of the base metal conductive electrode of the solar cell.
It is still another object of the present invention to provide a solar cell.
In order to solve the technical problems, the invention adopts the technical scheme that the preparation method of the base metal conductive electrode of the solar cell specifically comprises the following steps:
s1, selecting a silicon wafer with a surface covered with a protective film as a silicon substrate, and opening the protective film by adopting laser to obtain a metal electrode laser opening pattern with a certain width and depth;
s2, preparing a contact layer which is in contact with the silicon substrate above the laser opening area of S1, drying and performing heat treatment;
s3, preparing a base metal conducting layer on the contact layer obtained in the step S2;
s4, preparing a metal protection layer above the base metal conductive layer, and performing heat treatment.
Further, the silicon wafer in the S1 comprises a P-type silicon wafer or an N-type silicon wafer; the surface-covered protective film comprises one single-layer or multi-layer laminated films of silicon nitride, titanium dioxide, silicon dioxide and aluminum oxide, and the thickness of each film is 20-150 nm.
Further, the depth of the laser opening in S1 is in the range of 0.1 to 5 μm and the width is in the range of 2 to 40. Mu.m.
Further, the method for preparing the contact layer in S2 includes any one of inkjet printing, screen printing, vapor deposition, or electroplating.
Further, the contact layer material comprises any one of metal or conductive film, wherein the metal comprises one or more mixed metals of silver, platinum, cobalt, nickel, bismuth and titanium; the ink-jet printing contact layer material comprises any one of silver metal ink or titanium metal ink; the electroplating contact layer material comprises one or more mixed metals of cobalt, nickel, bismuth and titanium; the screen printed contact layer material comprises a silver paste.
Further, the preparation method of the base metal conductive layer in the step S3 comprises any one of electroplating or screen printing; the material of the base metal conductive layer comprises one or more mixed metals of copper, aluminum and zinc.
Further, the preparation method of the S4 metal protective layer comprises any one of electroplating or ink-jet printing; the metal protective layer material comprises one or more of tin, tungsten, molybdenum, platinum, nickel, cobalt and silver.
The heat treatment in S2 and S4 is performed under the protection of air, nitrogen, argon, or other inert gases.
A solar cell base metal conductive electrode is prepared by the method.
A solar cell comprises an N-type TOPCon cell, an N-type IBC cell and other silicon-based solar cells; the base metal conductive electrode of the solar cell is used as a cell electrode.
Compared with the prior art, the invention has the following beneficial effects:
at present, the copper electrode plating needs to use a mask, a demolding and other processes to prepare a seed layer required by copper plating, and the production equipment is complex and the process cost is high. The method utilizes the preparation process of the anti-reflection film or the passivation film in the existing solar cell, utilizes the anti-reflection film or the passivation film as a protective layer, utilizes the laser to determine the electrode pattern on the protective layer through the opening, has simple steps and low cost, is compatible with the existing process, and has better industrial production potential. The binding force between the copper electrode prepared by the existing copper electroplating process and the silicon substrate is difficult to ensure, and the oxidation resistance is weak, so that the solar cell is unfavorable for long-term outdoor use in the later period. The invention uses the contact layer to strengthen the binding force with the silicon substrate, and simultaneously uses the protective layer to cover the base metal layer, so that the base metal layer is made into a sandwich structure, and the oxidation of the base metal layer is well prevented. By constructing the base metal sandwich structure, the performance and the service life of the base metal electrode are greatly improved, and the stability of the battery can be maintained for a long time. The method is compatible with most of the current battery production line equipment, adopts base metal to replace the original silver electrode, reduces the production cost of the electrode, protects the diffusion of the base metal to the silicon substrate through the contact layer, reduces the surface recombination efficiency of the battery, and finally improves the photoelectric conversion efficiency of the battery.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings can be obtained according to these drawings without inventive effort to a person skilled in the art.
Fig. 1 is a schematic diagram of a solar cell base metal conductive electrode structure.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides a solar cell base metal conductive electrode, the structure of which is shown in figure 1; the specific preparation process is as follows:
firstly, selecting a silicon wafer with a surface covered with a protective film as a silicon substrate, and opening the protective film by adopting laser to obtain a metal electrode laser opening pattern with a certain width and depth; the silicon wafer is a P-type or N-type silicon wafer, the industrially used P-type silicon wafer is mainly a boron or gallium doped silicon wafer, and the N-type silicon wafer is mainly a phosphorus doped silicon wafer; wherein the concentration of doping elements such as boron, phosphorus and the like can be adjusted according to actual conditions; the protective film covered on the silicon chip can play a role of a mask in the subsequent process of preparing the base metal electrode, and is an antireflection film or a passivation film of the silicon chip. The protective film can be one single layer or multiple laminated films in films such as silicon nitride, titanium dioxide, silicon dioxide and aluminum oxide, the thickness range of each film is 20-150 nm, the laser opening protective film provides a position for a contact layer, the pattern of the laser opening is set according to the electrode pattern optimized on the front surface and the rear surface of the solar cell, the depth range of the opening is 0.1-5 mu m, and the width range is 2-40 mu m.
And secondly, preparing a contact layer which is in contact with the silicon substrate by any method of ink-jet printing, screen printing, vapor deposition or electroplating above the laser opening area in the first step, drying and realizing good contact with the silicon substrate by heat treatment, and blocking heavy metals from entering the silicon substrate while providing a conductive substrate for the subsequent electroplating step. The contact layer provides a conductive substrate for subsequent electroplating of the base metal electrode, and can prevent metal elements in the base metal electrode from entering the silicon substrate to form a composite center, so that minority carrier lifetime is reduced, and photoelectric conversion efficiency of the battery is affected. Meanwhile, the contact layer can be in good contact with the silicon substrate through heat treatment, so that the binding force with the silicon substrate is increased, and the service life and stability of the battery assembly are ensured in the later period. The heat treatment process is carried out under the protection of air or inert gases such as nitrogen, argon and the like. The contact layer can be prepared by adopting the modes of ink-jet printing, screen printing, vapor deposition or electroplating, etc., wherein if the existing screen printing machine vapor deposition equipment on the current production line can be selected for reducing the equipment cost, the screen printing can be used as the contact layer by printing thin silver paste, and drying is needed after printing. The vapor deposition can be one or more mixed metals of silver, platinum, cobalt, nickel, bismuth and titanium; the vapor deposition may also be one of an ITO, FTO or TCO conductive film. The ink jet printing may be metallic ink such as silver, titanium, etc. The electroplated contact layer metal can be one or a mixture of cobalt, nickel, bismuth and titanium.
Thirdly, electroplating or screen printing a base metal layer with a certain thickness above the contact layer in the second step to serve as a main part of a base metal conductive electrode; the metal layer is a main body part forming a base metal conductive electrode and plays a role in conduction, and the base metal element is one or a mixture of copper, aluminum and zinc, and the copper element is preferred in view of conductivity; the electroplating process can be conventional immersion electroplating or rolling brush electroplating; the screen printing process adopts metal conductive paste, and the screen printing process needs drying after printing.
And fourthly, electroplating or ink-jet printing a metal protective layer above the metal layer to prevent the base metal layer from being oxidized, and performing heat treatment to obtain the base metal conductive electrode of the solar cell. The metal element in the metal protective layer is one or a mixture of a plurality of tin, tungsten, molybdenum, platinum, nickel, cobalt and silver, preferably tin element; the electroplating process can be conventional immersion electroplating or rolling brush electroplating; the ink-jet printing process adopts conductive ink prepared from metal; the heat treatment process is carried out under the protection of air or inert gases such as nitrogen, argon and the like.
Example 1
The embodiment provides a preparation method of a base metal conductive electrode of a solar cell, which is based on the main production process of an N-type TOPCON cell and adopts the electrode preparation process to prepare a metal electrode. The specific method comprises the following steps: and preparing a contact layer by adopting ink-jet printing silver ink, preparing a base metal layer by electroplating a copper electrode, and preparing a sandwich structure of the base metal conductive electrode by electroplating a tin metal protective layer. The method comprises the following specific steps:
s1, selecting a phosphorus doped N-type monocrystalline silicon wafer with the resistivity of 1-3 omega cm, placing the N-type monocrystalline silicon wafer into a texturing groove, and carrying out surface organization in a sodium hydroxide solution with the specific gravity of 5-15% at the temperature of 75-80 ℃ to form a textured structure;
s2, cleaning the surface of the silicon wafer by using a chemical solution, wherein the solution is a mixed solution of hydrofluoric acid and hydrochloric acid, the cleaning time is 2min, and the temperature is 20-25 ℃;
s3, after cleaning, placing the silicon wafer in a diffusion furnace, and performing boron diffusion at 950-1200 ℃ for about 5-120 min, wherein the range of the diffusion sheet resistance is 50-100 Ω/≡;
s4, placing the diffused silicon wafer in a wet etching machine to remove the borosilicate glass layer;
s5, PECVD vapor deposition of a 1-2 nm silicon oxide layer on the back surface;
s6, carrying out back surface CVD (chemical vapor deposition) on a polycrystalline silicon layer with the thickness of 80-200 nm;
s7, the front surface silicon nitride film is used as an antireflection film and a passivation film, and the back surface aluminum oxide film is used as a passivation film;
s8, opening the anti-reflection film and the passivation film by front surface laser according to the front surface electrode pattern, wherein the depth range of the opening is 0.1-5 mu m, and the width range is 2-40 mu m;
s9, printing silver ink with the thickness of 0.5-0.8 mu m above the laser opening area by adopting ink jet printing, and drying at the drying temperature of 250 ℃;
s10, annealing treatment is carried out in a chain reaction furnace at 550-600 ℃ under the protection of nitrogen;
s11, electroplating a copper metal layer with the thickness of 5-10 mu m above the silver contact layer to serve as a main part of the conductive electrode;
s12, electroplating a metal tin protective layer with the thickness of 1-3 mu m above the copper metal layer;
s13, carrying out annealing at 400-500 ℃ for 5-15 min under the protection of nitrogen.
Example 2
The embodiment provides a preparation method of a base metal conductive electrode of a solar cell, which is based on the main production process of an N-type TOPCON cell and adopts the electrode preparation process to prepare a metal electrode. The specific method comprises the following steps: preparing a contact layer by electroplating cobalt metal, preparing a base metal layer by screen printing copper electrode slurry, electroplating a nickel metal protective layer, and preparing a sandwich structure of the base metal conductive electrode. The method comprises the following specific steps:
s1, selecting a phosphorus doped N-type monocrystalline silicon wafer with the resistivity of 1-3 omega cm, placing the N-type monocrystalline silicon wafer into a texturing groove, and carrying out surface organization in a sodium hydroxide solution with the specific gravity of 5-15% at the temperature of 75-80 ℃ to form a textured structure;
s2, cleaning the surface of the silicon wafer by using a chemical solution, wherein the solution is a mixed solution of hydrofluoric acid and hydrochloric acid, the cleaning time is 2min, and the temperature is 20-25 ℃;
s3, after cleaning, placing the silicon wafer in a diffusion furnace, and performing boron diffusion at 950-1200 ℃ for about 5-120 min, wherein the range of the diffusion sheet resistance is 50-100 Ω/≡;
s4, placing the diffused silicon wafer in a wet etching machine to remove the borosilicate glass layer;
s5, PECVD vapor deposition of a 1-2 nm silicon oxide layer on the back surface;
s6, carrying out back surface CVD (chemical vapor deposition) on a polycrystalline silicon layer with the thickness of 80-200 nm;
s7, the front surface silicon nitride film is used as an antireflection film and a passivation film, and the back surface aluminum oxide film is used as a passivation film;
s8, opening the anti-reflection film and the passivation film by front surface laser according to the front surface electrode pattern, wherein the depth range of the opening is 0.1-5 mu m, and the width range is 2-40 mu m;
s9, electroplating a nickel metal layer with the thickness of 1-2 mu m, and cleaning;
s10, annealing treatment in a chain reaction furnace at 400-500 ℃;
s11, screen printing copper conductive paste above the nickel contact layer, printing the copper conductive paste to a thickness of 15-25 mu m, and drying the copper conductive paste at a drying temperature of 200 ℃;
s12, electroplating a metal nickel protective layer with the thickness of 1-3 mu m above the copper metal layer;
s13, carrying out under the protection of nitrogen, wherein the temperature in the chain reaction furnace is 400-500 ℃ and the time is 10-20 min.
Example 3
The embodiment provides a preparation method of a solar cell base metal conductive electrode, which is based on the main production process of an N-type IBC cell and adopts the electrode preparation process to prepare a metal electrode. The specific method comprises the following steps: and preparing a contact layer by electroplating platinum, preparing a base metal layer by electroplating copper electrode slurry, and preparing a sandwich structure of a base metal conductive electrode by electroplating a tin metal protective layer. The method comprises the following specific steps:
s1, selecting a phosphorus doped N-type monocrystalline silicon wafer with resistivity of 6-8Ω & cm, cleaning the surface of the silicon wafer by using a chemical solution, wherein the solution is a mixed solution of hydrofluoric acid and hydrochloric acid, the cleaning time is 2Min, the temperature is 20-25 ℃, and removing a damaged layer;
s2, after cleaning, placing the silicon wafer in a diffusion furnace, and performing double-sided boron diffusion at 950-1200 ℃; placing the diffused silicon wafer in a wet etching machine to remove the borosilicate glass layer;
s3, growing a back dry-method silicon oxide mask layer;
s4, locally opening the mask layer by back laser;
s5, back phosphorus diffusion, namely placing the silicon wafer in a diffusion furnace, and performing back phosphorus diffusion at 800-850 ℃;
s6, placing the silicon wafer in a texturing groove, and carrying out front surface organization in a sodium hydroxide solution with the specific gravity of 5% -15% at the temperature of 75-80 ℃ to form a textured structure;
s7, using the double-sided silicon oxide and silicon nitride films as an antireflection film and a passivation film;
s8, opening a passivation film by laser according to the back surface electrode pattern, wherein the depth range of the opening is 0.1-5 mu m, and the width range is 2-40 mu m;
s9, electroplating a platinum metal layer with the thickness of 0.5-1 mu m, and cleaning;
s10, annealing treatment in a chain reaction furnace at 400-500 ℃;
s11, electroplating a copper electrode above the platinum contact layer, wherein the thickness is 3-8 mu m, and drying the copper electrode at 200 ℃;
s12, electroplating a metal tin protective layer with the thickness of 0.5-2 mu m above the copper metal layer;
s13, carrying out under the protection of nitrogen, wherein the temperature in the chain reaction furnace is 400-500 ℃ and the time is 10-20 min.
Example 4
S1 to S8 are the same as in example 1;
s9, adopting a vapor deposition cobalt metal layer with the thickness of 0.01-0.05 mu m, and cleaning;
s10, annealing treatment is carried out for 120min in a chain reaction furnace at 600-800 ℃ under the protection of nitrogen;
s11, screen printing aluminum conductive paste above the cobalt contact layer, printing the aluminum conductive paste to a thickness of 15-30 mu m, and drying the aluminum conductive paste at a drying temperature of 300 ℃;
s12, electroplating a metal tungsten protective layer with the thickness of 1-3 mu m above the aluminum metal layer;
s13, carrying out under the protection of nitrogen, wherein the temperature in the chain reaction furnace is 600-800 ℃ and the time is 10-20 min.
Example 5
S1 to S8 are the same as in example 1;
s9, adopting a vapor deposition ITO conductive film with the thickness of 1-1.5 mu m, and cleaning;
s10, annealing treatment is carried out for 60min in a chain reaction furnace at 400-600 ℃ under the protection of nitrogen;
s11, screen printing zinc conductive paste on the ITO conductive film, printing the zinc conductive paste to a thickness of 5-20 mu m, and drying at a drying temperature of 300 ℃;
s12, electroplating a metal molybdenum protective layer with the thickness of 1-3 mu m above the zinc metal layer;
s13, carrying out under the protection of nitrogen, wherein the temperature in the chain reaction furnace is 400-600 ℃ and the time is 40-60 min.
Example 6
S1 to S8 are the same as in example 1;
s9, adopting vapor deposition (FTO) conductive films with the thickness of 0.1-1 mu m, and cleaning;
s10, annealing treatment is carried out for 60min in a chain reaction furnace at 400-600 ℃ under the protection of nitrogen;
s11, screen printing aluminum conductive paste above the ITO conductive film, printing the aluminum conductive paste to a thickness of 5-20 mu m, and drying the aluminum conductive paste at a drying temperature of 300 ℃;
s12, electroplating a metal molybdenum protective layer with the thickness of 1-3 mu m above the aluminum metal layer;
s13, carrying out under the protection of nitrogen, wherein the temperature in the chain reaction furnace is 400-600 ℃ and the time is 40-60 min.
Example 7
S1 to S8 are the same as in example 1;
s9, adopting vapor deposition TCO conductive film with thickness of 0.5-1 μm, and cleaning;
s10, annealing treatment is carried out for 60min in a chain reaction furnace at 400-600 ℃ under the protection of nitrogen;
s11, screen printing aluminum conductive paste above the ITO conductive film, printing the aluminum conductive paste to a thickness of 5-20 mu m, and drying the aluminum conductive paste at a drying temperature of 300 ℃;
s12, electroplating a metal molybdenum protective layer with the thickness of 1-3 mu m above the aluminum metal layer;
s13, carrying out under the protection of nitrogen, wherein the temperature in the chain reaction furnace is 400-600 ℃ and the time is 40-60 min.
Example 8
The procedure was the same as in example 4, except that the mixed metal of bismuth and titanium was used for the vapor deposition of S9.
Example 9
The procedure was the same as in example 3, except that the S9 plating metal was a nickel and cobalt mixed metal.
Example 10
The procedure was as in example 4, except that silver was used for the vapor deposition of the metal at S9.
Comparative example 1
The annealing treatments of S10 and S13 were not performed, and the rest of the steps were the same as in example 1.
Comparative example 2
S12, electroplating a metal protection layer is not carried out; the remaining steps were the same as in example 1.
Comparative example 3
The procedure was the same as in example 1 except that S11 to S13 were not performed.
Comparative example 4
Except that S9 adopts electroplated nickel metal layer with thickness of 100-150 mu m; the remaining steps were the same as in example 2.
Comparative example 5
The procedure was as in example 2, except that the copper conductive paste was screen printed over the nickel contact layer at a print thickness of 100 to 150 μm, at S11.
Comparative example 6
The procedure was as in example 2, except that the copper conductive paste was screen printed over the nickel contact layer at a printing thickness of 0.5 μm at S11.
Experimental example
The electrodes prepared in examples and comparative examples were assembled into solar cells, and performance test was performed on the solar cells, and experimental results are shown in Table 1, the metal electrode prepared in the present invention was prepared such that the front surface dark saturation current density (J 0,metal ) Greatly reduced, obviously reduced surface recombination rate and improved minority carrier lifetime, and 1000 silicon wafers are selected in experiments to prepare the battery piece serving as an experimental piece by adopting the scheme of the invention, and the battery piece which is not used for preparing the selective emitter by adopting the experimental process is a standard piece.
Table 1 experimental results of the examples of the present application
| Battery parameters | Photoelectric conversion efficiency | Open circuit voltage | Current density | Fill factor |
| Standard sheet | 25.21％ | 0.718V | 42.53mA/cm 2 | 82.53％ |
| Example 1 | 25.68％ | 0.724V | 42.65mA/cm 2 | 83.16％ |
| Example 2 | 25.23％ | 0.719V | 42.43mA/cm 2 | 82.69％ |
| Example 3 | 25.59％ | 0.718V | 43.11mA/cm 2 | 82.66％ |
| Example 4 | 25.53％ | 0.719V | 42.93mA/cm 2 | 82.72％ |
| Example 5 | 25.33％ | 0.720V | 42.65mA/cm 2 | 82.46％ |
| Example 6 | 25.35％ | 0.721V | 42.73mA/cm 2 | 82.29％ |
| Example 7 | 25.41％ | 0.719V | 42.81mA/cm 2 | 82.56％ |
| Example 8 | 25.25％ | 0.718V | 42.63mA/cm 2 | 82.49％ |
| Example 9 | 25.34％ | 0.719V | 42.69mA/cm 2 | 82.56％ |
| Comparative example 1 | 24.88％ | 0.718V | 42.25mA/cm 2 | 82.06％ |
| Comparative example 2 | 24.83％ | 0.718V | 42.09mA/cm 2 | 82.19％ |
| Comparative example 3 | 24.73％ | 0.718V | 42.05mA/cm 2 | 81.91％ |
| Comparative example 4 | 24.93％ | 0.718V | 42.24mA/cm 2 | 82.21％ |
| Comparative example 5 | 24.88％ | 0.718V | 42.17mA/cm 2 | 82.18％ |
| Comparative example 6 | 24.84％ | 0.719V | 41.95mA/cm 2 | 82.36％ |
In this specification, each embodiment is described in a related manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments. In particular, for system embodiments, since they are substantially similar to method embodiments, the description is relatively simple, with reference to the description of method embodiments in part.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.
Claims (10)
1. The preparation method of the base metal conductive electrode of the solar cell is characterized by comprising the following steps of:
s1, selecting a silicon wafer with a surface covered with a protective film as a silicon substrate, and opening the protective film by adopting laser to obtain a metal electrode laser opening pattern with a certain width and depth;
s2, preparing a contact layer which is in contact with the silicon substrate above the laser opening area of S1, drying and performing heat treatment;
s3, preparing a base metal conducting layer on the contact layer obtained in the step S2;
s4, preparing a metal protection layer above the base metal conductive layer, and performing heat treatment.
2. The method for preparing a base metal conductive electrode of a solar cell according to claim 1, wherein the silicon wafer in S1 comprises a P-type silicon wafer or an N-type silicon wafer; the surface-covered protective film comprises one single-layer or multi-layer laminated films of silicon nitride, titanium dioxide, silicon dioxide and aluminum oxide, and the thickness of each film is 20-150 nm.
3. The method for producing a base metal conductive electrode for a solar cell according to claim 1, wherein the depth of the laser opening in S1 is in the range of 0.1 to 5 μm and the width is in the range of 2 to 40 μm.
4. The method of manufacturing a base metal conductive electrode for a solar cell according to claim 1, wherein the method of manufacturing a contact layer in S2 comprises any one of inkjet printing, screen printing, vapor deposition or electroplating.
5. The method for producing a base metal conductive electrode for a solar cell according to claim 4, wherein the contact layer material comprises any one of a metal or a conductive thin film using vapor deposition, wherein the metal comprises one or more mixed metals of silver, platinum, cobalt, nickel, bismuth, titanium; the ink-jet printing contact layer material comprises any one of silver metal ink or titanium metal ink; the electroplating contact layer material comprises one or more mixed metals of cobalt, nickel, bismuth and titanium; the screen printed contact layer material comprises a silver paste.
6. The method for producing a base metal conductive electrode for a solar cell according to claim 1, wherein the method for producing a base metal conductive layer in S3 comprises any one of electroplating and screen printing; the material of the base metal conductive layer comprises one or more mixed metals of copper, aluminum and zinc.
7. The method for preparing a base metal conductive electrode of a solar cell according to claim 1, wherein the method for preparing the S4 metal protective layer comprises any one of electroplating or inkjet printing; the metal protective layer material comprises one or more of tin, tungsten, molybdenum, platinum, nickel, cobalt and silver.
8. The method for preparing a base metal conductive electrode of a solar cell according to claim 1, wherein the heat treatment in S2 and S4 is performed under the protection of air or inert gases such as nitrogen and argon.
9. A solar cell base metal conductive electrode, characterized in that it is produced using any of the methods of claims 1-8.
10. A solar cell comprises an N-type TOPCon cell, an N-type IBC cell and other silicon-based solar cells;
a solar cell base metal conductive electrode according to claim 9 is used as a cell electrode.
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