CN117410392A - Flip-chip thin-film LED chip and preparation method thereof - Google Patents
Flip-chip thin-film LED chip and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000010409 thin film Substances 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 126
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 37
- 238000005260 corrosion Methods 0.000 claims abstract description 9
- 230000007797 corrosion Effects 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 268
- 239000010408 film Substances 0.000 claims description 43
- 239000002096 quantum dot Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 238000006243 chemical reaction Methods 0.000 claims description 30
- 239000012790 adhesive layer Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 229920005989 resin Polymers 0.000 claims description 16
- 239000011347 resin Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 238000003486 chemical etching Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- 229910002601 GaN Inorganic materials 0.000 claims description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 8
- 229920001187 thermosetting polymer Polymers 0.000 claims description 8
- 238000000016 photochemical curing Methods 0.000 claims description 5
- 238000007788 roughening Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 11
- 238000004806 packaging method and process Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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Abstract
The application discloses a flip film LED chip and a preparation method thereof, wherein the preparation method of the flip film LED chip forms an epitaxial structure by carrying out epitaxial growth on a silicon-based substrate, and the epitaxial structure comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked on the silicon-based substrate; forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer based on the epitaxial structure; removing the silicon-based substrate by chemical corrosion; in the application, the silicon-based substrate is directly removed by chemical corrosion, and the flip film LED chip can be prepared without adopting a laser stripping process, so that the problems of high cost, long required time and low yield brought by the laser stripping process are avoided.
Description
Technical Field
The application relates to the technical field of semiconductor devices, in particular to a flip film LED chip and a preparation method thereof.
Background
The LED is used as a new generation solid cold light source, has the characteristics of low energy consumption, long service life, easy control, safety, environmental protection and the like, is an ideal energy-saving and environmental-friendly product, and is suitable for various illumination places. In order to improve the luminous efficiency of the LED chip, a flip-chip LED chip process is developed to reduce the shielding of the electrode to the light-emitting surface.
The existing flip LED chip utilizes the light transmission characteristic of the sapphire substrate to emit LED light from the surface of the sapphire substrate, so that the chip is prepared into a flip structure. If the flip film LED chip is required to be prepared, the substrate is required to be stripped by adopting a sapphire laser stripping process. However, the laser lift-off process is costly, requires long time, and has low yield, making industrialization difficult.
Disclosure of Invention
The application provides a flip film LED chip and a preparation method thereof, wherein the flip film LED chip can be prepared without adopting a laser stripping process, so that the problems of high cost, long required time and low yield caused by the laser stripping process are avoided.
The embodiment of the application provides a preparation method of a flip film LED chip, which comprises the following steps:
performing epitaxial growth on a silicon-based substrate to form an epitaxial structure, wherein the epitaxial structure comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked on the silicon-based substrate;
forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer based on the epitaxial structure;
and removing the silicon-based substrate by adopting chemical corrosion.
The method for manufacturing the flip film LED chip in some embodiments further comprises the following steps before the silicon-based substrate is removed by chemical etching:
providing a temporary fixing layer, and bonding the second semiconductor layer and the temporary fixing layer by adopting a bonding process.
The preparation method of the flip film LED chip in some embodiments further comprises the following steps of:
providing a quantum dot white light conversion layer, and attaching the quantum dot white light conversion layer to one side, far away from the second semiconductor layer, of the first semiconductor layer;
and removing the temporary fixing layer.
The preparation method of the flip film LED chip in some embodiments further comprises the following steps of:
and roughening the surface of the first semiconductor layer.
The preparation method of the flip film LED chip in some embodiments specifically includes that a bonding process is adopted to bond the second semiconductor layer with the temporary fixing layer:
a first organic adhesive layer is provided, and the second semiconductor layer and the temporary fixing layer are bonded through the first organic adhesive layer by a bonding process.
In some embodiments, the method for manufacturing the flip film LED chip includes attaching the quantum dot white light conversion layer to a side of the first semiconductor layer away from the second semiconductor layer, including:
and providing a second organic bonding layer, and passing the quantum dot white light conversion layer and the first semiconductor layer through the second organic bonding layer.
In some embodiments of the method of manufacturing a flip film LED chip, the first organic adhesive layer and the second organic adhesive layer are both thermosetting resin layers or photo-curing resin layers.
In some embodiments, a method for manufacturing a flip chip thin film LED chip, forming a first electrode electrically connected to a first semiconductor layer and a second electrode electrically connected to a second semiconductor layer based on an epitaxial structure includes:
etching the epitaxial structure to form a through groove, wherein the through groove penetrates through the active layer and the second semiconductor layer so as to expose the first semiconductor layer;
forming a metal reflecting layer in ohmic contact with the second semiconductor layer on the surface of the second semiconductor layer;
forming an insulating layer covering the metal reflecting layer and the through groove, and forming a through hole on the insulating layer to expose part of the metal reflecting layer and the first semiconductor layer respectively;
a first electrode and a second electrode are formed on the insulating layer, the first electrode is electrically connected with the first semiconductor layer, and the second electrode is electrically connected with the metal reflecting layer.
In some embodiments, the material of the first semiconductor layer and the second semiconductor layer includes gallium nitride.
The embodiment of the application also provides a flip film LED chip, which comprises:
an epitaxial structure including a first semiconductor layer, an active layer, and a second semiconductor layer stacked in order; the epitaxial layer is provided with a through groove which penetrates through the active layer and the second semiconductor layer so as to expose the first semiconductor layer;
the metal reflecting layer is positioned on the second semiconductor layer and avoids the through groove;
the insulating layer is arranged on the metal reflecting layer and fills the through groove;
a first electrode electrically connected to the first semiconductor layer;
and the second electrode is electrically connected with the metal reflecting layer.
In some embodiments of the flip film LED chip, the materials of the first semiconductor layer and the second semiconductor layer each comprise gallium nitride.
The flip film LED chip in some embodiments further comprises a quantum dot white light conversion layer bonded to a side of the first semiconductor layer remote from the second semiconductor layer by an organic bonding layer.
In some embodiments of the flip film LED chip, the organic adhesive layer is a thermosetting resin layer or a photo-curable resin layer.
According to the flip film LED chip and the preparation method thereof, the preparation method of the flip film LED chip forms an epitaxial structure by epitaxial growth on a direct silicon-based substrate, and then forms a first electrode and a second electrode based on the epitaxial structure; removing the silicon-based substrate by chemical etching after the first electrode and the second electrode are arranged; in the process, the silicon substrate is directly removed by chemical corrosion, and the flip film LED chip can be prepared without adopting a laser stripping process, so that the problems of high cost, long required time and low yield caused by the laser stripping process are avoided.
Drawings
Technical solutions and other advantageous effects of the present application will be made apparent from the following detailed description of specific embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a first flowchart of a method for manufacturing a flip film LED chip according to an embodiment of the present application.
Fig. 2 is a schematic diagram of a flip-chip thin-film LED chip structure including an epitaxial structure and a silicon-based substrate according to an embodiment of the present application.
Fig. 3 is a second flowchart of a method for manufacturing a flip film LED chip according to an embodiment of the present application.
Fig. 4 is a schematic structural diagram of a flip film LED chip including a temporary fixing layer according to an embodiment of the present application.
Fig. 5 is a third flowchart of a method for manufacturing a flip film LED chip according to an embodiment of the present application.
Fig. 6 is a schematic structural diagram of a flip-chip thin-film LED chip after removing a substrate according to an embodiment of the present application.
Fig. 7 is a schematic structural diagram of a flip film LED chip including a quantum dot white light conversion layer according to an embodiment of the present application.
Fig. 8 is a flowchart of step 200 in the method for manufacturing a flip film LED chip according to the embodiment of the present application.
Fig. 9 is a schematic diagram of a first structure of a flip film LED chip according to an embodiment of the present application.
Fig. 10 is a schematic diagram of a second structure of a flip film LED chip according to an embodiment of the present application.
Reference numerals:
10. a silicon-based substrate; 11. a first semiconductor layer; 12. an active layer; 13. a second semiconductor layer;
20. a first electrode; 30. a second electrode; 40. a temporary fixing layer; 50. a quantum dot white light conversion layer; 60. a reflective layer; 70. an insulating layer.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated, whereby a feature defining "first," "second," or the like, may explicitly or implicitly include one or more features, and in the description of the present invention, a meaning of "a plurality" is two or more, unless otherwise specifically defined.
Referring to fig. 1, the embodiment provides a method for manufacturing a flip film LED chip, which includes:
100. performing epitaxial growth on a silicon-based substrate to form an epitaxial structure, wherein the epitaxial structure comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked on the silicon-based substrate;
200. forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer based on the epitaxial structure;
300. and removing the silicon-based substrate by adopting chemical corrosion.
Referring to fig. 2 together, fig. 2 is a schematic diagram of an epitaxial structure and a flip-chip thin-film LED chip structure of a silicon-based substrate 10 provided in the present embodiment; in this embodiment, epitaxial growth is directly performed on the silicon-based substrate 10 to form an epitaxial structure, and the epitaxial structure includes a first semiconductor layer 11, an active layer 12 and a second semiconductor layer 13 stacked in order on the silicon-based substrate 10; thereafter forming a first electrode 20 and a second electrode 30 based on the epitaxial structure; after the first electrode 20 and the second electrode 30 are disposed, the silicon substrate 10 is removed by chemical etching, and the thickness of the LED chip can be reduced after the silicon substrate 10 is removed, so that a flip film LED chip can be formed. In the process, the silicon substrate 10 is directly removed by chemical corrosion, and the flip film LED chip can be prepared without adopting a laser stripping process, so that the problems of high cost, long required time and low yield caused by the laser stripping process are avoided.
As an example, chemical etching is used to remove the silicon-based substrate 10, and in particular acidic chemical etching may be used. For example, the silicon-based substrate 10 with a grown epitaxial structure is removed by acid-mixed etching such as nitric acid, acetic acid, hydrofluoric acid, etc., thereby effectively avoiding the removal of the substrate by a laser lift-off process, and further avoiding the problems of high cost, long time required, and low yield caused by the laser lift-off process.
Referring to fig. 3, in some embodiments, step 300 further comprises: 310. a temporary fixing layer 40 is provided and the second semiconductor layer 13 is bonded to the temporary fixing layer 40 using a bonding process. As shown in fig. 4, fig. 4 is a schematic view showing the structure of a flip-chip film LED chip including a temporary fixing layer 40 provided in the present embodiment; since the epitaxial structure is obtained by performing epitaxial growth on the silicon substrate 10, and then the first electrode 20 and the second electrode 30 are formed based on the epitaxial structure, the thickness of the LED chip structure itself after the first electrode 20 and the second electrode 30 are formed is relatively thin, and therefore, in this embodiment, in order to facilitate the subsequent removal of the silicon substrate 10, a temporary fixing layer 40 is bonded by a bonding process on the side away from the silicon substrate 10, that is, on the side of the second semiconductor layer 13. The thickness of the current LED chip structure can be increased through the temporary fixing layer 40, so that the subsequent operation of removing the silicon-based substrate is facilitated.
Referring to fig. 5, in some embodiments, step 300 further includes:
400. providing a quantum dot white light conversion layer, and attaching the quantum dot white light conversion layer to one side, far away from the second semiconductor layer, of the first semiconductor layer;
500. and removing the temporary fixing layer.
Referring to fig. 6 and 7, fig. 6 is a schematic diagram of a flip-chip thin-film LED chip structure with a substrate removed according to the present embodiment; fig. 7 is a schematic diagram of a flip-chip thin-film LED chip bonded with the quantum dot white light conversion layer 50 provided in this embodiment; in this embodiment, after the silicon substrate 10 is removed, the quantum dot white light conversion layer 50 is attached to the first semiconductor layer 11, and then the light emitted from the quantum dot white light conversion layer 50 is white light, so as to form the flip-chip thin-film white LED chip. If the temporary fixing layer 40 is provided before the silicon-based substrate 10 is removed, the temporary fixing layer 40 is removed after the white LED chip is formed (as shown in fig. 7) to form a flip-chip thin-film white LED chip.
In some embodiments, the surface of the first semiconductor layer 11 is roughened after the silicon-based substrate 10 is removed by chemical etching. Specifically, the first semiconductor layer 11 may be roughened by an alkaline etching solution such as sodium hydroxide or sodium carbonate etching solution or the like in order to improve the light extraction efficiency of the first semiconductor layer 11.
In some embodiments, the step of bonding the second semiconductor layer 13 to the temporary fixing layer 40 using a bonding process specifically includes: a first organic adhesive layer is provided, and the second semiconductor layer 13 and the temporary fixing layer 40 are bonded through a bonding process through the first organic adhesive layer.
The first organic bond is a thermosetting resin layer or a photo-curing resin layer, and the thermosetting resin layer or the photo-curing resin layer is used to release the temporary fixing layer 40 at a high temperature or under ultraviolet irradiation when the temporary fixing layer 40 needs to be removed later. Specifically, the first organic adhesive layer may include a strong acid and alkali corrosion resistant material such as an epoxy resin or a silicone resin house.
In some embodiments, the step of bonding the quantum dot white light conversion layer 50 to the side of the first semiconductor layer 11 away from the second semiconductor layer 13 specifically includes: a second organic adhesive layer is provided through which the quantum dot white light conversion layer 50 and the first semiconductor layer 11 pass. Also, the second organic adhesive layer in this embodiment may be a thermosetting resin layer or a photo-curing resin layer, and the quantum dot white light conversion layer 50 is adhered to the first semiconductor layer 11 through the second organic adhesive layer, thereby directly forming the flip film white LED chip.
Compared with the white light chip manufactured by adopting a bracket packaging mode, the heat resistance of the lamp beads is larger, so that the junction temperature of the chip is higher, and the light efficiency is lower; and the blue light is adopted to excite the quantum dot film to form a white light chip, wherein the required quantum dot film has higher cost. Therefore, in this embodiment, the thin film flip-chip white LED chip is prepared by directly attaching the quantum dot white light conversion layer 50, so that the chip packaging cost or the quantum dot film cost can be reduced, and the light efficiency can be improved.
Referring to fig. 8, in some embodiments, step 200 specifically includes:
210. etching the epitaxial structure to form a through groove, wherein the through groove penetrates through the active layer and the second semiconductor layer so as to expose the first semiconductor layer;
220. forming a metal reflecting layer in ohmic contact with the second semiconductor layer on the surface of the second semiconductor layer;
230. forming an insulating layer covering the metal reflecting layer and the through groove, and forming a through hole on the insulating layer to expose part of the metal reflecting layer and the first semiconductor layer respectively;
240. a first electrode and a second electrode are formed on the insulating layer, the first electrode is electrically connected with the first semiconductor layer, and the second electrode is electrically connected with the metal reflecting layer.
Referring to fig. 7, an epitaxial structure is formed by sequentially growing a first semiconductor structure, an active layer 12 and a second semiconductor structure on a silicon substrate. Then etching the through trench based on the epitaxial structure to expose a portion of the first semiconductor layer 11; specifically, the through groove extends to the first semiconductor layer 11 along the surface of the second semiconductor layer 13 so that the first semiconductor layer 11 is exposed. Then, a metal reflecting layer 60 in ohmic contact with the second semiconductor layer 13 is deposited on the surface of the second semiconductor layer 13 by a metal sputtering or electron beam method by a yellow light process patterning method, and the metal reflecting layer 60 avoids the through groove, so that the light emitting effect can be improved by arranging the metal reflecting layer 60 in the embodiment.
Then, an insulating layer 70 is covered on the metal reflective layer, the insulating layer 70 is obtained by deposition, and the insulating layer 70 needs to cover the through grooves. In order to facilitate the subsequent formation of the first electrode 20 and the second electrode 30, it is also necessary to provide a via hole in the insulating layer 70 to expose the metal reflective layer and the first semiconductor layer, respectively. The specific way of forming the through holes can be chemical. Thereafter, a metal structure such as NiAlTiPtAu is deposited on the insulating layer 70 to form the first electrode 20 and the second electrode 30, wherein the first electrode 20 is electrically connected to the first semiconductor layer through a first via of the insulating layer 70, the second electrode 30 is electrically connected to the metal reflective layer through a second via of the insulating layer 70, and the first electrode 20 and the second electrode 30 are spaced apart by the insulating layer 70; the first electrode 20 and the second electrode 30 are used to subsequently connect with pads in a circuit board to form conductive paths.
As an example, the material of the insulating layer 70 in this example includes SiOx, siNx, or the like.
As an example, the materials of the first semiconductor layer 11 and the second semiconductor layer 13 include gallium nitride, and the semiconductor layer formed of gallium nitride material is used to emit blue light subsequently, and the blue light is converted by the quantum dot white light conversion layer 50 to obtain white light, so as to form a white LED chip.
Wherein the first semiconductor layer 11 is an N-type semiconductor layer, and the second semiconductor layer 13 is a P-type semiconductor layer; the corresponding first electrode is an N electrode, and the second electrode is a P electrode.
In some embodiments, the step of providing the quantum dot white light conversion layer 50 includes: etching sapphire by inductively coupled plasma, then etching the sapphire by using gallium nitride material to form a microporous structure, and spin-coating white light conversion quantum dot material in the microporous structure by a spin-coating mode; thereafter, the quantum dot material is protected by depositing an insulating material or a protective colloid to form the quantum dot white light conversion layer 50. It should be noted that the formation of the quantum dot white light conversion layer 50 is known and will not be described herein.
The application also provides a flip film LED chip, refer to fig. 9, and fig. 9 is a schematic diagram of a first structure of the flip film LED chip provided in the application; the flip film LED chip is manufactured by adopting the manufacturing method, and comprises an epitaxial structure, a metal reflecting layer 60, an insulating layer 70, a first electrode 20 and a second electrode 30; wherein the epitaxial structure includes a first semiconductor layer 11, an active layer 12, and a second semiconductor layer 13 stacked in this order; the epitaxial layer has a through groove penetrating the active layer 12 and the second semiconductor layer 13 to expose the first semiconductor layer 11; the metal reflecting layer 60 is positioned on the second semiconductor layer 13 and avoids the through groove; the metal insulating layer 70 is positioned on the metal reflecting layer 60 and fills the through groove; the first electrode 20 is electrically connected to the first semiconductor layer 11, and the second electrode 30 is electrically connected to the metal reflective layer 60; specifically, the first electrode 20 is located on the insulating layer 70 and is electrically connected to the first semiconductor layer 11 through a first via hole on the insulating layer 70; the second electrode 30 is located on the insulating layer 70 and is electrically connected to the metal reflective layer 60 through a second via hole penetrating the insulating layer 70.
In some embodiments, the materials of the first semiconductor layer 11 and the second semiconductor layer 13 each include gallium nitride.
Referring to fig. 10, fig. 10 is a schematic diagram of a second structure of the flip film LED chip provided in the present application. In some embodiments, the flip-chip thin-film LED chip further includes a quantum dot white light conversion layer 50, and the quantum dot white light conversion layer 50 is bonded to a side, far away from the second semiconductor layer 13, of the first semiconductor layer 11 through an organic bonding layer, that is, the flip-chip thin-film white light LED chip can be directly obtained by attaching the quantum dot white light conversion layer 50 in this embodiment. Compared with the white light chip manufactured by adopting a bracket packaging mode, the heat resistance of the lamp beads is larger, so that the junction temperature of the chip is higher, and the light efficiency is lower; and the blue light is adopted to excite the quantum dot film to form a white light chip, wherein the required quantum dot film has higher cost. In this embodiment, the thin film flip-chip white LED chip is prepared by directly attaching the quantum dot white light conversion layer 50, so that the chip packaging cost or the quantum dot film cost can be reduced, and the light efficiency can be improved.
In some embodiments, the organic adhesive layer is a thermosetting resin layer or a photo-curable resin layer; specifically, the first organic adhesive layer may include a strong acid and alkali corrosion resistant material such as an epoxy resin or a silicone resin house.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
The flip film LED chip provided by the embodiment of the present application is described in detail, and specific examples are applied to illustrate the principles and embodiments of the present application, and the description of the above embodiments is only used to help understand the technical solution and core idea of the present application; those of ordinary skill in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.
Claims (13)
1. The preparation method of the flip film LED chip is characterized by comprising the following steps of:
performing epitaxial growth on a silicon-based substrate to form an epitaxial structure, wherein the epitaxial structure comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked on the silicon-based substrate;
forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer based on the epitaxial structure;
and removing the silicon-based substrate by adopting chemical corrosion.
2. The method of fabricating a flip-chip thin-film LED chip of claim 1, further comprising, prior to said removing said silicon-based substrate by chemical etching:
providing a temporary fixing layer, and bonding the second semiconductor layer and the temporary fixing layer by adopting a bonding process.
3. The method of fabricating a flip-chip thin-film LED chip of claim 2, further comprising, after said removing said silicon-based substrate by chemical etching:
providing a quantum dot white light conversion layer, and bonding the quantum dot white light conversion layer with one side, far away from the second semiconductor layer, of the first semiconductor layer;
and removing the temporary fixing layer.
4. The method of manufacturing a flip-chip thin-film LED chip as claimed in any one of claims 1 to 3, wherein the removing the silicon-based substrate by chemical etching further comprises:
and roughening the surface of the first semiconductor layer.
5. The method for manufacturing a flip-chip thin-film LED chip as claimed in claim 3, wherein said bonding said second semiconductor layer to said temporary fixing layer by a bonding process specifically comprises:
providing a first organic adhesive layer, and bonding the second semiconductor layer and the temporary fixing layer through the first organic adhesive layer through a bonding process.
6. The method of manufacturing a flip-chip thin-film LED chip of claim 5, wherein said bonding said quantum dot white light conversion layer to a side of said first semiconductor layer remote from said second semiconductor layer comprises:
providing a second organic adhesive layer, and passing the quantum dot white light conversion layer and the first semiconductor layer through the second organic adhesive layer.
7. The method of manufacturing a flip-chip thin-film LED chip of claim 6, wherein said first organic adhesive layer and said second organic adhesive layer are both a thermosetting resin layer or a photo-curing resin layer.
8. The method of manufacturing a flip-chip thin-film LED chip according to claim 6 or 7, wherein forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer based on the epitaxial structure comprises:
etching the epitaxial structure to form a through groove, wherein the through groove penetrates through the active layer and the second semiconductor layer so as to expose the first semiconductor layer;
forming a metal reflecting layer in ohmic contact with the second semiconductor layer on the surface of the second semiconductor layer;
forming an insulating layer covering the metal reflecting layer and the through groove, and forming a through hole on the insulating layer to expose part of the metal reflecting layer and the first semiconductor layer respectively;
the first electrode and the second electrode are formed on the insulating layer, the first electrode is electrically connected with the first semiconductor layer, and the second electrode is electrically connected with the metal reflecting layer.
9. The method of manufacturing a flip-chip thin-film LED chip of claim 8, wherein the materials of said first semiconductor layer and said second semiconductor layer comprise gallium nitride.
10. A flip-chip thin film LED chip, comprising:
an epitaxial structure comprising a first semiconductor layer, an active layer and a second semiconductor layer stacked in sequence; the epitaxial layer is provided with a through groove, and the through groove penetrates through the active layer and the second semiconductor layer to expose the first semiconductor layer;
the metal reflecting layer is positioned on the second semiconductor layer and avoids the through groove;
the insulating layer is positioned on the metal reflecting layer and fills the through groove;
a first electrode electrically connected to the first semiconductor layer;
and the second electrode is electrically connected with the metal reflecting layer.
11. The flip-chip thin-film LED chip of claim 10, wherein the materials of said first and second semiconductor layers each comprise gallium nitride.
12. The flip-chip thin-film LED chip of claim 11, further comprising a quantum-dot white light conversion layer bonded to a side of said first semiconductor layer remote from said second semiconductor layer by an organic bonding layer.
13. The flip-chip thin-film LED chip of claim 12, wherein said organic adhesive layer is a thermosetting resin layer or a photo-curable resin layer.
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