CN117376759B - Microphone assembly and microphone - Google Patents
Microphone assembly and microphone Download PDFInfo
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- CN117376759B CN117376759B CN202311665910.7A CN202311665910A CN117376759B CN 117376759 B CN117376759 B CN 117376759B CN 202311665910 A CN202311665910 A CN 202311665910A CN 117376759 B CN117376759 B CN 117376759B
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- 239000000758 substrate Substances 0.000 claims abstract description 67
- 125000006850 spacer group Chemical group 0.000 claims description 19
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 230000010255 response to auditory stimulus Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 41
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000013016 damping Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 25
- 230000008859 change Effects 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- OCDRLZFZBHZTKQ-NMUBGGKPSA-N onetine Chemical compound C[C@@H](O)[C@@]1(O)C[C@@H](C)[C@@](C)(O)C(=O)OC\C2=C\CN(C)CC[C@@H](OC1=O)C2=O OCDRLZFZBHZTKQ-NMUBGGKPSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/08—Mouthpieces; Microphones; Attachments therefor
- H04R1/083—Special constructions of mouthpieces
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
The invention discloses a microphone assembly and a microphone, comprising: the substrate is provided with a through back cavity; the electrode layer comprises a first electrode area and a second electrode area which are isolated from each other, a first tooth electrode and a second tooth electrode which extend towards the second electrode area are arranged on the first electrode area, a third tooth electrode which extends towards the first electrode area is arranged on the second electrode area, the first tooth electrode and the third tooth electrode form a first capacitor, the second tooth electrode and the third tooth electrode form a second capacitor, and the first capacitor and the second capacitor form a differential capacitor. The technical scheme of the invention realizes the conversion of the press film damping into the sliding damping, thereby avoiding the viscous attraction between the electrode and the back electrode plate in the prior art, and has the advantages of simple structure and low production cost.
Description
Technical Field
The present disclosure relates to microphones, and particularly to a microphone assembly and a microphone.
Background
The signal to noise ratio of current single membrane microphone products is limited by the single membrane structure itself, even if the size of the product is increased, the product signal to noise ratio is improved only marginally. The differential microphone structure can effectively improve the signal-to-noise ratio of the product by carrying out differential processing on the two signals.
Differential microphones in the market are mainly divided into two main categories, namely a double-backplate microphone and a double-diaphragm microphone. Because the sound holes on the upper back plate and the lower back plate of the double-back plate microphone are used for forward sound packaging or backward sound packaging, pollutants such as particles easily enter the gap layer from the sound holes, so that the vibrating diaphragm and the back plate are attracted, and the sensitivity of a product is reduced or the product is invalid. The double-diaphragm microphone has the advantages that the processing technology needs to open holes in the diaphragms firstly, then release the gap layers, then plug the release holes in the diaphragms, and the processing technology is complex and has high production cost.
Disclosure of Invention
The embodiment of the invention provides a microphone assembly and a microphone, which output differential signals through electrode layers, and the sliding damping structure between a tooth electrode and a dielectric block avoids the viscous attraction of the tooth electrode and the dielectric block, and has the advantages of simple structure, simple processing technology and low production cost.
In order to solve the technical problems, the embodiment of the invention discloses the following technical scheme:
in one aspect, a microphone assembly is provided, comprising:
a substrate having a back cavity penetrating in a thickness direction thereof;
an electrode layer located at one side of the substrate, the electrode layer comprising a first electrode region and a second electrode region isolated from each other, the first electrode region being provided with a first tooth electrode and a second tooth electrode extending towards the second electrode region, the second electrode region being provided with a third tooth electrode extending towards the first electrode region, wherein the first tooth electrode and the third tooth electrode are partially opposed to form a first capacitance, the second tooth electrode and the third tooth electrode are partially opposed to form a second capacitance, and the first capacitance and the second capacitance are configured as differential capacitances;
a first insulating dielectric body with a first through region is arranged between the substrate and the electrode layer in the thickness direction of the substrate, a second insulating dielectric body with a second through region is arranged on one side of the electrode layer, which is away from the substrate, projections of the first through region and the second through region overlap, a first dielectric block extending towards the center direction of the first through region is arranged on the first insulating dielectric body, a second dielectric block extending towards the center direction of the second through region is arranged on the second insulating dielectric body, and the projections of the first dielectric block and the second dielectric block are distributed at intervals of preset intervals;
wherein a first dielectric block is at least partially received between the first and third tooth electrodes; the second dielectric block is at least partially received between the second and third tooth electrodes.
In addition to or in lieu of one or more of the features disclosed above, the first dielectric block has a first end proximal to the base and a second end distal to the base, the first tooth electrode has a first bottom surface proximal to the base and a first top surface distal to the base, the second end being located between the first bottom surface and the first top surface; the second dielectric block has a third end proximate to the substrate and a fourth end distal to the substrate, the second tooth electrode has a second bottom surface proximal to the substrate and a second top surface distal to the substrate, the second end being located between the second bottom surface and the second top surface.
In addition to one or more features disclosed above, or alternatively, the first, second, and third tooth electrodes are displaced in a thickness direction of the substrate in response to sound pressure.
In addition to or in lieu of one or more of the features disclosed above, the first, second and third tine electrodes are movable beam structures.
In addition to or in lieu of one or more of the features disclosed above, the first electrode region is disposed circumferentially about the second electrode region with a spacer therebetween to accommodate the first, second and third teeth electrodes.
In addition to or instead of one or more of the features disclosed above, the electrode region further includes an elastic member, a plurality of elastic members are circumferentially and uniformly disposed in the spacer region, and two ends of the elastic member are respectively connected to the first electrode region and the second electrode region.
In addition to or in lieu of one or more of the features disclosed above, the resilient member divides the spacer region into a plurality of electrode set regions, with at least one first, at least one second and at least one third tooth electrode being disposed within one of the electrode set regions.
In addition to or instead of one or more of the features disclosed above, in the case where the number of the first, second, and third teeth electrodes in the same electrode group region is plural, the first and second teeth electrodes are alternately arranged in order, and the third teeth electrode is disposed between the adjacent first and second teeth electrodes.
In addition to or in lieu of one or more of the features disclosed above, in a thickness direction of the substrate, the back cavity overlaps with a projection of the first through region and the back cavity communicates with the first through region.
In addition to or in lieu of one or more of the features disclosed above, the anchor points extend through the back cavity and the first through region in the thickness direction of the substrate and are fixedly connected with the second electrode region, and a portion of the anchor points contained in the back cavity are fixedly connected with the substrate through a plurality of radially extending connecting beams.
In addition to or as an alternative to one or more of the features disclosed above, a number of the first and second cog electrodes are alternately arranged in turn in a ring shape within the spacer, the third cog electrode being arranged between adjacent first and second cog electrodes.
In addition to one or more features disclosed above, or alternatively, in the thickness direction of the substrate, orthographic projections of the plurality of connection beams on the electrode layer overlap the plurality of third tooth electrodes in one-to-one correspondence; and the connecting beam extends out of the connecting structure along the thickness direction of the substrate and is fixedly connected with the corresponding third tooth electrode.
In another aspect, a microphone is further disclosed that includes a microphone assembly as described in any of the above, in addition to or instead of one or more of the features disclosed above.
One of the above technical solutions has the following advantages or beneficial effects: on one hand, the sliding film damping between the electrode and the dielectric block in the application avoids the situation that the vibrating diaphragm and the backboard in the double backboard microphone in the prior art are absorbed by the pollutant phase viscosity entering from the sound hole; and the electrode layer of this application is single membranous layer structure and compares in prior art's dual vibrating diaphragm microphone, membranous layer structure is simple, simplifies manufacturing technique, reduction in production cost. On the other hand, compared with the prior art that the capacitance value is changed by approaching and separating the electrodes, the capacitance value is changed by relative sliding between the electrodes and the dielectric block so as to change the equivalent dielectric constant, and the signal-to-noise ratio is remarkably improved and the noise is reduced.
Drawings
The technical solution and other advantageous effects of the present invention will be made apparent by the following detailed description of the specific embodiments of the present invention with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a microphone assembly according to a first embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of a microphone assembly according to a first embodiment of the invention;
fig. 3 is a top view of a microphone assembly according to a first embodiment of the invention;
fig. 4 is a schematic cross-sectional view of an electrode layer in a microphone assembly according to a first embodiment of the invention;
fig. 5 is a schematic cross-sectional structure of a microphone assembly according to a second embodiment of the invention.
In the figure: 100-substrate; 101-a back cavity; 110-anchor points; 111-connecting beams; 200-electrode layers; 210-a first electrode region; 211-a first tooth electrode; 212-a second tooth electrode; 213-a first terminal; 214-a second terminal; 220-a second electrode region; 221-a third tooth electrode; 230-spacers; 240-elastic member; 241-conductive spring beams; 300-a first insulating dielectric body; 301-a first through region; 310-a first dielectric block; 400-a second insulating dielectric body; 401-a second through region; 410-a second dielectric block.
Detailed Description
In order to make the objects, technical solutions and advantageous effects of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings and detailed description. It should be understood that the detailed description is intended to illustrate the invention, and not to limit the invention.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present invention, the meaning of "plurality" means two or more, unless specifically defined otherwise.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; the connection may be mechanical connection, direct connection or indirect connection through an intermediate medium, and may be internal connection of two elements or interaction relationship of two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is less level than the second feature.
Referring to fig. 1 and fig. 2, fig. 1 and fig. 2 respectively show a schematic structural diagram and a schematic sectional structural diagram of a microphone assembly according to a first embodiment of the present invention, where the microphone assembly according to an embodiment of the present invention includes: the substrate 100, and a first insulating dielectric body 300, an electrode layer 200, and a second insulating dielectric body 400 sequentially stacked on the substrate 100 in the thickness direction of the substrate 100. The substrate 100 has a back cavity 101 penetrating the substrate 100 in the thickness direction thereof, the first insulating dielectric body 300 has a first penetration region 301 penetrating the first insulating dielectric body 300 in the thickness direction of the substrate 100, and the second insulating dielectric body 400 has a second penetration region 401 penetrating the second insulating dielectric body 400 in the thickness direction of the substrate 100. In the thickness direction of the substrate 100, projections of the back cavity 101, the first through region 301, and the second through region 401 overlap. In the present embodiment, in the thickness direction of the substrate 100, the projections of the first through region 301 and the second through region 401 overlap, and the projection of the back cavity 101 is accommodated within the projection of the first through region 301 or the second through region 401. The sound pressure is transferred through the back cavity 101 and the first through region 301 in sequence and acts on the acoustoelectric sensing structure in the electrode layer 200, and the first through region 301 and the second through region 401 provide a movement space for the acoustoelectric sensing structure in the electrode layer 200. In the present embodiment, in the thickness direction of the substrate 100, the projections of the back cavity 101, the first through region 301, and the second through region 401 are all circular structures.
As shown in fig. 3, the electrode layer 200 includes a first electrode region 210 and a second electrode region 220 that are separated from each other, the first electrode region 210 is disposed around the second electrode region 220, and a region between the first electrode region 210 and the second electrode region 220 forms a spacer 230. In the present embodiment, in the thickness direction of the substrate 100, the projection of the second electrode region 220 is a circular structure, and the spacer region 230 is a ring structure. The first electrode region 210 extends toward the second electrode region 220 near the outer edge of the spacer region 230 with a plurality of first and second teeth electrodes 211 and 212. Specifically, the first and second teeth electrodes 211 and 212 are movable beam structures, and the first and second teeth electrodes 211 and 212 are displaced in the thickness direction of the substrate 100 under the action of sound pressure. The second electrode region 220 extends toward the first electrode region 210 near the outer edge of the spacer region 230 to form a plurality of third tooth electrodes 221, and the third tooth electrodes 221 are disposed between the adjacent first tooth electrodes 211 and second tooth electrodes 212. The first, second and third spike electrodes 211, 212 and 221 are all accommodated within the spacer 230. The adjacent first and third tooth electrodes 211 and 221 are partially opposed to configure a first capacitance, an effective space between the first and third tooth electrodes 211 and 221 with respect to the first capacitance is a first dielectric cavity, the third tooth electrode 221 is partially opposed to the adjacent second tooth electrode 212 to configure a second capacitance, and an effective space between the second and third tooth electrodes 212 and 221 with respect to the second capacitance is a second dielectric cavity. The pitch between the first and third teeth electrodes 211 and 221 is equal to the pitch between the second and third teeth electrodes 212 and 221.
In the present embodiment, the electrode layer 200 further includes a plurality of elastic members 240 disposed within the spacer region 230 to connect the first electrode region 210 and the second electrode region 220. Under the influence of the sound pressure, the first electrode region 210 is deformed in the thickness direction of the substrate 100, and the third tooth electrode 221 is displaced in the thickness direction of the substrate 100 with the vibration of the first electrode region 210. And the displacement directions of the first tooth electrode 211, the second tooth electrode 212 and the third tooth electrode 221 along the thickness direction of the substrate 100 are the same, the distances are equal, the effective electrode area of the first tooth electrode 211 and the third tooth electrode 221 relative to the first capacitor is equal to the effective electrode area of the second tooth electrode 212 and the third tooth electrode 221 relative to the second capacitor, and the volumes of the first dielectric cavity and the second dielectric cavity are equal.
As shown in fig. 4, a plurality of first dielectric blocks 310 extend in the center direction of the first through region 301 at the edge position of the first dielectric body 300 toward the first through region 301. The first dielectric block 310 is accommodated in a region between the first and third tooth electrodes 211 and 221 in front projection of the electrode layer 200 in the thickness direction of the substrate 100. The first dielectric block 310 extends in the thickness direction of the substrate 100 toward the electrode layer 200 such that at least a portion of the first dielectric block 310 is sandwiched between the first and third teeth electrodes 211 and 221, and the first dielectric block 310 is disposed apart from the first and second teeth electrodes 211 and 212. In a stationary state, the first dielectric block 310 occupies a portion of the first dielectric cavity. A plurality of second dielectric blocks 410 extend in the center direction of the second through region 401 at the edge position of the second insulating dielectric body 400 facing the second through region 401. The second dielectric block 410 accommodates a region between the second and third tooth electrodes 212 and 221 in the orthographic projection of the electrode layer 200 in the thickness direction of the substrate 100. The second dielectric block 410 extends in the thickness direction of the substrate 100 toward the electrode layer 200 such that at least a portion of the second dielectric block 410 is sandwiched between the second and third teeth electrodes 212 and 221, and the second dielectric block 410 is disposed apart from the second and third teeth electrodes 212 and 221. In the rest state, the second dielectric block 410 occupies a portion of the second dielectric cavity.
Specifically, the first dielectric block 310 has a first end portion close to the substrate 100 and a second end portion far from the substrate 100, the first tooth electrode 211 has a first bottom surface close to the substrate 100 and a first top surface far from the substrate 100, and the second end portion of the first dielectric block 310 is located between the first bottom surface and the first top surface of the first tooth electrode 211. The second dielectric block 410 has a third end portion near the substrate 100 and a fourth end portion far from the substrate 100, the second tooth electrode 212 has a second bottom surface near the substrate 100 and a second top surface far from the substrate 100, and the second end portion of the second dielectric block 410 is located between the second bottom surface and the second top surface of the second tooth electrode 212.
It should be noted that, in the case of the present application in a static state, the space ratio of the first dielectric block 310 in the first dielectric cavity of the first capacitor is equal to the space ratio of the second dielectric block 410 in the second dielectric cavity of the second capacitor, and the capacitance values of the first capacitor and the second capacitor are equal. Under the action of sound pressure, the space duty ratio of the first dielectric block 310 and the second dielectric block 410 in the first dielectric cavity and the second dielectric cavity is changed through synchronous displacement of the first tooth electrode 211, the second tooth electrode 212 and the third tooth electrode 221 along the thickness direction of the substrate 100, so that the equivalent dielectric constants of the first capacitor and the second capacitor are changed, the capacitance values of the first capacitor and the second capacitor are changed, the capacitance change amounts of the first capacitor and the second capacitor are consistent, the directions are opposite, differential output is formed, and the first capacitor and the second capacitor are configured into differential capacitors. The difference between the capacitance values of the first and second capacitances is used to convert the output signal to sound by the integrated circuit.
Illustratively, when the first, second and third tooth electrodes 211, 212 and 221 are displaced in a direction away from the substrate 100 by the sound pressure, the space ratio of the first dielectric block 310 in the first dielectric cavity is reduced, the equivalent dielectric constant of the first capacitor is reduced, and the capacitance value of the first capacitor is reduced; the space ratio of the second dielectric block 410 in the second dielectric cavity is increased, the equivalent dielectric constant of the second capacitor is increased, and the capacitance value of the second capacitor is increased. And obtaining an output signal related to sound by utilizing the capacitance value variation difference value of the first capacitor and the second capacitor.
When the first tooth electrode 211, the second tooth electrode 212 and the third tooth electrode 221 are displaced in a direction approaching the substrate 100 under the action of sound pressure, the space occupation ratio of the first dielectric block 310 in the first dielectric cavity is increased, the equivalent dielectric constant of the first capacitor is increased, and the capacitance value of the first capacitor is increased; the space ratio of the second dielectric block 410 in the second dielectric cavity is reduced, the equivalent dielectric constant of the second capacitor is reduced, and the capacitance value of the second capacitor is reduced. And obtaining an output signal related to sound by utilizing the capacitance value variation difference value of the first capacitor and the second capacitor.
In the present embodiment, the extending direction of the elastic member 240 extends along the radial direction of the annular spacer 230, and the plurality of elastic members 240 are uniformly and equally disposed in the spacer 230, and the elastic member 240 partitions the annular spacer 230 into a plurality of sector-shaped electrode group regions. At least one first spike electrode 211, at least one second spike electrode 212 and at least one third spike electrode 221 are provided within each electrode group region. The at least one first tine electrode 211, the at least one second tine electrode 212, and the at least one tine electrode to construct at least one first capacitance and at least one second capacitance to construct a differential capacitance. In the case where the number of the first serration electrodes 211, the second serration electrodes 212, and the third serration electrodes 221 is plural, the first serration electrodes 211 and the second serration electrodes 212 are alternately arranged in order in an electrode group region, the third serration electrodes 221 are disposed between adjacent first serration electrodes 211 and second serration electrodes 212, and the difference in number between the first serration electrodes 211 and the second serration electrodes 212 is 1. It should be understood that in the case where the electrodes at the two most side positions are the first teeth electrodes 211 in one electrode group, the number of the first teeth electrodes 211 is 1 more than the number of the second teeth electrodes 212; in the case where the electrodes at the two most side positions are the second serration electrodes 212, the number of the second serration electrodes 212 is 1 more than the number of the first serration electrodes 211.
Further, referring to fig. 3, the elastic member 240 includes a first elastic beam made of a conductive material and a plurality of second elastic beams made of an insulating material. The second elastic beam of the insulating material connects the body of the first electrode region 210 and the second electrode region 220, and simultaneously insulates and isolates the first electrode region 210 and the second electrode region 220. The first electrode region 210 further includes a first terminal 213 electrically connected to the body of the first electrode region 210 and a second terminal 214 insulated from the body of the first electrode region 210, the first terminal 213 for extracting the electrical signals of the first and second teeth electrodes 211 and 212. One end of the first elastic beam of the conductive material is connected with the second electrode region 220, the other end of the first elastic beam is electrically connected with the second terminal 214, the first elastic beam is isolated from the body of the first electrode region 210 in an insulating manner, and the second terminal 214 leads out an electric signal of the third tooth electrode 221 through the first elastic beam. The first elastic beam electrically connected to the second terminal 214 and the second elastic beam made of insulating material meet the potential difference requirement of the electrodes in the first capacitor and the second capacitor.
In this embodiment, the first and second tooth electrodes 211 and 212 are connected to the first electrode region 210, the third tooth electrode 221 is connected to the second electrode region 220, and in other embodiments, the first and second tooth electrodes 211 and 212 are connected to the second electrode region 220, the third tooth electrode 221 is connected to the first electrode region 210, an electrical signal of the third tooth electrode 221 is led out through the first terminal 213, and an electrical signal of the first and second tooth electrodes 211 and 212 is led out through the second terminal 214 to satisfy a potential difference requirement of the electrodes in the first and second capacitances.
On the one hand, the sliding damping structure between the tooth electrode and the dielectric block is compared with the pressing film damping structure between the vibrating diaphragm and the back plate in the double-back plate microphone in the prior art, and the situation that the vibrating diaphragm and the back plate are absorbed by the pollutant phase viscosity entering from the sound hole is avoided. Compared with the double-diaphragm microphone in the prior art, the single-layer film structure of the electrode layer 200 has the advantages of simple film structure, simplified production process and reduced production cost. On the other hand, compared with the change of the capacitance value of the film pressing damping structure in the prior art, the change of the capacitance value of the first capacitor and the second capacitor is realized through the change of the approaching and the separating between the electrodes, and the change of the capacitance value of the first capacitor and the second capacitor is realized through the relative sliding between the electrodes and the medium so as to change the space ratio of the medium in the dielectric cavity, thereby changing the equivalent dielectric constant, and obviously improving the signal-to-noise ratio and reducing the noise.
The first electrode region 210 is annularly arranged at the periphery of the second electrode region 220 and is separated from the second electrode region 220, so that the potential difference requirements between the first tooth electrode 211 and the third tooth electrode 221 and between the second tooth electrode 212 and the third tooth electrode 221 are met, more first capacitors and more second capacitors can be arranged in a unit area, the sensitivity of the application is improved, and meanwhile, the size and the production cost of the application are reduced.
Referring to fig. 5, fig. 5 is a schematic cross-sectional structure of a microphone assembly according to a second embodiment of the invention, and in comparison with the first embodiment, the electrode layer 200 in the microphone assembly of the second embodiment does not include the elastic member 240. In the second embodiment, the microphone assembly further includes an anchor 110, where the anchor 110 penetrates through the back cavity 101 and the first through region 301 along the thickness direction of the substrate 100 and is fixedly connected to the second electrode region 220, and an axis of the anchor 110 and a center point of the second electrode region 220 are on the same straight line. The partial anchor point 110 accommodated in the back cavity 101 is fixedly connected with the substrate 100 by a plurality of radially extending connecting beams 111, so that the second electrode region 220 is fixed between the first through region 301 and the second through region 401 in a stationary state.
In the present embodiment, the first and second teeth electrodes 211 and 212 are alternately arranged in the annular direction of the spacer 230 at intervals in sequence, and the third teeth electrode 221 is disposed between the adjacent first and second teeth electrodes 211 and 212, so that the first and second capacitors are alternately arranged in sequence in the annular spacer 230.
Further, in the thickness direction of the substrate 100, the orthographic projections of the plurality of connection beams 111 on the electrode layer 200 overlap the plurality of third tooth electrodes 221 in a one-to-one correspondence; the connection beam 111 extends out of the connection structure along the thickness direction of the substrate 100 to be fixedly connected with the corresponding third tooth electrode 221. The third tooth electrode 221 is fixedly connected with the substrate 100 through a connection structure so as to optimize the rigidity of the third tooth electrode 221, and enable the displacement of the third tooth electrode 221 connected to the second electrode region 220 and the displacement of the first tooth electrode 211 and the displacement of the second tooth electrode 212 to be consistent, so that the sensitivity of the application can be improved, and the signal to noise ratio of the application can be further improved.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the claims. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (13)
1. A microphone assembly, comprising:
a substrate having a back cavity penetrating in a thickness direction thereof;
an electrode layer located at one side of the substrate, the electrode layer comprising a first electrode region and a second electrode region isolated from each other, the first electrode region being provided with a first tooth electrode and a second tooth electrode extending towards the second electrode region, the second electrode region being provided with a third tooth electrode extending towards the first electrode region, wherein the first tooth electrode and the third tooth electrode are partially opposed to form a first capacitance, the second tooth electrode and the third tooth electrode are partially opposed to form a second capacitance, and the first capacitance and the second capacitance are configured as differential capacitances;
a first insulating dielectric body with a first through region is arranged between the substrate and the electrode layer in the thickness direction of the substrate, a second insulating dielectric body with a second through region is arranged on one side of the electrode layer, which is away from the substrate, projections of the first through region and the second through region overlap, a first dielectric block extending towards the center direction of the first through region is arranged on the first insulating dielectric body, a second dielectric block extending towards the center direction of the second through region is arranged on the second insulating dielectric body, and the projections of the first dielectric block and the second dielectric block are distributed at intervals of preset intervals;
wherein a first dielectric block is at least partially received between the first and third tooth electrodes; the second dielectric block is at least partially received between the second and third tooth electrodes.
2. The microphone assembly of claim 1 wherein the first dielectric block has a first end proximate to the base and a second end distal to the base, the first teeth electrode having a first bottom surface proximal to the base and a first top surface distal to the base, the second end being located between the first bottom surface and the first top surface; the second dielectric block has a third end proximate to the substrate and a fourth end distal to the substrate, the second tooth electrode has a second bottom surface proximal to the substrate and a second top surface distal to the substrate, the second end being located between the second bottom surface and the second top surface.
3. The microphone assembly of claim 1 wherein the first tine electrode, the second tine electrode, and the third tine electrode are displaced in a thickness direction of the substrate in response to sound pressure.
4. A microphone assembly as in claim 3 wherein said first tine electrode, said second tine electrode and said third tine electrode are movable beam structures.
5. The microphone assembly of claim 1 wherein the first electrode region is disposed around the outer periphery of the second electrode region with a spacer between the first electrode region and the second electrode region to accommodate the first tine electrode, the second tine electrode, and the third tine electrode.
6. The microphone assembly of claim 5 wherein the electrode area further comprises an elastic member, a plurality of elastic members are circumferentially and uniformly disposed in the spacer area, and two ends of the elastic member are respectively connected with the first electrode area and the second electrode area.
7. The microphone assembly of claim 6 wherein the resilient member separates the spacer into a plurality of electrode assembly regions, at least one first tine electrode, at least one second tine electrode, and at least one third tine electrode being disposed within one of the electrode assembly regions.
8. A microphone assembly as recited in claim 7, wherein,
under the condition that the number of the first tooth electrodes, the second tooth electrodes and the third tooth electrodes in the same electrode group area is a plurality of, the first tooth electrodes and the second tooth electrodes are alternately arranged in sequence, and the third tooth electrodes are arranged between the adjacent first tooth electrodes and the second tooth electrodes.
9. The microphone assembly of claim 5 wherein the back cavity overlaps with a projection of the first through region in a thickness direction of the substrate and the back cavity communicates with the first through region.
10. The microphone assembly of claim 9, further comprising,
the anchor point penetrates through the back cavity and the first through area in the thickness direction of the substrate and is fixedly connected with the second electrode area, and part of the anchor point which is accommodated in the back cavity is fixedly connected with the substrate through a plurality of radially extending connecting beams.
11. The microphone assembly of claim 10 wherein a plurality of the first tine electrodes and a plurality of the second tine electrodes are alternately arranged in a ring shape in sequence within the spacer, the third tine electrode being disposed between adjacent ones of the first tine electrodes and the second tine electrodes.
12. The microphone assembly of claim 10 wherein orthographic projections of a plurality of said connection beams on said electrode layer overlap a plurality of said third teeth electrodes in one-to-one correspondence in a thickness direction of said substrate; and the connecting beam extends out of the connecting structure along the thickness direction of the substrate and is fixedly connected with the corresponding third tooth electrode.
13. A microphone comprising a microphone assembly according to any of claims 1-12.
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| CN202311665910.7A CN117376759B (en) | 2023-12-07 | 2023-12-07 | Microphone assembly and microphone |
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| CN202311665910.7A CN117376759B (en) | 2023-12-07 | 2023-12-07 | Microphone assembly and microphone |
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| CN117376759B true CN117376759B (en) | 2024-02-02 |
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| CN101415137A (en) * | 2008-11-14 | 2009-04-22 | 瑞声声学科技(深圳)有限公司 | Capacitance type microphone |
| CN103124389A (en) * | 2011-11-14 | 2013-05-29 | 英飞凌科技股份有限公司 | Sound transducer with interdigitated first and second sets of comb fingers |
| CN103596110A (en) * | 2013-11-29 | 2014-02-19 | 上海集成电路研发中心有限公司 | MEMS (Micro-electro-mechanical Systems) microphone structure and preparation method thereof |
| CN107786929A (en) * | 2016-08-26 | 2018-03-09 | 上海微联传感科技有限公司 | Silicon microphone |
| CN212115605U (en) * | 2020-06-19 | 2020-12-08 | 歌尔微电子有限公司 | Microphone and audio equipment |
| CN216649989U (en) * | 2021-06-08 | 2022-05-31 | 瑞声声学科技(深圳)有限公司 | Comb-shaped capacitance microphone |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITUA20163571A1 (en) * | 2016-05-18 | 2017-11-18 | St Microelectronics Srl | MEMS ACOUSTIC TRANSDUCER WITH INTERDIGATED ELECTRODES AND ITS MANUFACTURING PROCEDURE |
| CN107105377B (en) * | 2017-05-15 | 2021-01-22 | 潍坊歌尔微电子有限公司 | MEMS microphone |
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- 2023-12-07 CN CN202311665910.7A patent/CN117376759B/en active Active
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|---|---|---|---|---|
| CN101415137A (en) * | 2008-11-14 | 2009-04-22 | 瑞声声学科技(深圳)有限公司 | Capacitance type microphone |
| CN103124389A (en) * | 2011-11-14 | 2013-05-29 | 英飞凌科技股份有限公司 | Sound transducer with interdigitated first and second sets of comb fingers |
| CN103596110A (en) * | 2013-11-29 | 2014-02-19 | 上海集成电路研发中心有限公司 | MEMS (Micro-electro-mechanical Systems) microphone structure and preparation method thereof |
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| CN117376759A (en) | 2024-01-09 |
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