CN117375566A - Film bulk acoustic resonator, manufacturing method thereof, filter and electronic equipment - Google Patents

Film bulk acoustic resonator, manufacturing method thereof, filter and electronic equipment Download PDF

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Publication number
CN117375566A
CN117375566A CN202311414106.1A CN202311414106A CN117375566A CN 117375566 A CN117375566 A CN 117375566A CN 202311414106 A CN202311414106 A CN 202311414106A CN 117375566 A CN117375566 A CN 117375566A
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CN
China
Prior art keywords
electrode
layer
bulk acoustic
film bulk
thin film
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CN202311414106.1A
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Chinese (zh)
Inventor
郑永帅
高安明
路晓明
姜伟
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Zhejiang Xingyao Semiconductor Co ltd
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Zhejiang Xingyao Semiconductor Co ltd
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Priority to CN202311414106.1A priority Critical patent/CN117375566A/en
Publication of CN117375566A publication Critical patent/CN117375566A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type

Abstract

The invention provides a thin film bulk acoustic resonator, a manufacturing method thereof, a filter and electronic equipment. Therefore, the capacitor structure is integrated in the thin film bulk acoustic resonator, the use of a passive integrated circuit chip can be reduced or even abandoned, the effective design area of the filter and the electronic equipment is enlarged, and the design difficulty is reduced.

Description

Film bulk acoustic resonator, manufacturing method thereof, filter and electronic equipment
Technical Field
The present invention relates to the field of filters, and more particularly, to a thin film bulk acoustic resonator, a method for manufacturing the same, a filter, and an electronic device.
Background
FBAR (Film Bulk Acoustics Resonator, thin film bulk acoustic resonator) is a resonator currently widely used in the radio frequency field and is manufactured using MEMS (Micro Electro Mechanical Systems, microelectromechanical system) semiconductor surface processing technology and thin film technology. The piezoelectric effect and the inverse piezoelectric effect are utilized, and the signal gating characteristic is combined, so that the signal filtering effect can be realized by a topological structure formed by cascading a plurality of film bulk acoustic resonators.
In the circuit topology design of filters, passive devices, such as capacitors/inductors, are often required to implement various circuit functions including frequency modulation, matching, etc. In practical product device designs, because passive devices occupy a larger area, separate chips (IPD Die) are often required to form devices such as capacitors and inductors, so as to be matched with the use of filters.
With the development of technology, the requirements on the design integration level of electronic devices are higher and higher nowadays, and because the complexity of the system is rapidly improved, the high-performance filter often needs to design more groups of film bulk acoustic resonators, so that a larger area is occupied, and the use of passive devices further reduces the available area of the electronic devices, so that greater difficulty is brought to the design of the electronic devices.
Disclosure of Invention
In view of this, the invention provides a thin film bulk acoustic resonator, a method for manufacturing the same, a filter and an electronic device, which effectively solve the technical problems existing in the prior art, integrate a capacitance structure in the thin film bulk acoustic resonator, and further reduce or even discard the use of passive integrated circuit chips, thereby increasing the effective design area of the filter and the electronic device and reducing the design difficulty.
In order to achieve the above purpose, the technical scheme provided by the invention is as follows:
a thin film bulk acoustic resonator comprising:
the piezoelectric device comprises a substrate, a first electrode layer, a piezoelectric layer, a second electrode layer and a passivation layer, wherein the first electrode layer, the piezoelectric layer, the second electrode layer and the passivation layer are positioned on one side of the substrate and are sequentially overlapped, the first electrode layer comprises a lower electrode, the second electrode layer comprises an upper electrode, and a cavity is formed between the lower electrode and the substrate; overlapping areas of the cavity, the lower electrode, the piezoelectric layer and the upper electrode in the thickness direction are effective areas of the film bulk acoustic resonator;
and a conductive layer on a side of the passivation layer facing away from the substrate, the conductive layer including at least one main electrode plate, wherein the main electrode plate at least partially overlaps one of the first electrode layer and the second electrode layer in a direction from the substrate to the passivation layer.
Correspondingly, the invention also provides a manufacturing method of the film bulk acoustic resonator, which is used for preparing the film bulk acoustic resonator, wherein the manufacturing method comprises the following steps:
providing a substrate;
a sacrificial layer, a first electrode layer, a piezoelectric layer, a second electrode layer and a passivation layer are sequentially formed on one side of the substrate in a superposition mode, wherein the first electrode layer comprises a lower electrode, the second electrode layer comprises an upper electrode, and the sacrificial layer, the lower electrode, the piezoelectric layer and the upper electrode are overlapped in the thickness direction;
Forming a conductive layer on a side of the passivation layer facing away from the substrate, the conductive layer including at least one main electrode plate, wherein the main electrode plate at least partially overlaps one of the first electrode layer and the second electrode layer in a direction from the substrate to the passivation layer;
and removing the sacrificial layer to form a cavity, wherein the cavity is positioned between the lower electrode and the substrate, and the overlapping area of the cavity, the lower electrode, the piezoelectric layer and the upper electrode in the thickness direction is an effective area of the film bulk acoustic resonator.
Correspondingly, the invention also provides a filter, which comprises the film bulk acoustic resonator.
Correspondingly, the invention also provides electronic equipment which comprises the film bulk acoustic resonator and/or the filter, wherein the film bulk acoustic resonator is the film bulk acoustic resonator, and/or the filter comprises the film bulk acoustic resonator.
Compared with the prior art, the technical scheme provided by the invention has at least the following advantages:
the invention provides a thin film bulk acoustic resonator, a manufacturing method thereof, a filter and electronic equipment. Therefore, the capacitor structure is integrated in the thin film bulk acoustic resonator, the use of a passive integrated circuit chip can be reduced or even abandoned, the effective design area of the filter and the electronic equipment is enlarged, and the design difficulty is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of another thin film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a structure of another thin film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 11 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 12 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 13 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
fig. 14 is a flowchart of a method for manufacturing a thin film bulk acoustic resonator according to an embodiment of the present invention;
fig. 15 is a schematic structural diagram of a filter according to an embodiment of the present invention;
FIG. 16 is an equivalent circuit diagram of FIG. 15;
fig. 17 is a schematic structural diagram of yet another filter according to an embodiment of the present invention;
fig. 18 is an equivalent circuit diagram of fig. 17;
fig. 19 is a schematic structural diagram of yet another filter according to an embodiment of the present invention;
FIG. 20 is an equivalent circuit diagram of FIG. 19;
fig. 21 is a schematic structural diagram of yet another filter according to an embodiment of the present invention;
FIG. 22 is an equivalent circuit diagram of FIG. 21;
fig. 23 is a schematic structural diagram of yet another filter according to an embodiment of the present invention;
Fig. 24 is an equivalent circuit diagram of fig. 23.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As described in the background art, with the development of technology, the requirements for the design integration level of electronic devices are higher and higher nowadays, because the complexity of the system is rapidly improved, the high-performance filter often needs to design more groups of film bulk acoustic resonators, thus occupying a larger area, and the use of passive devices further reduces the available area of the electronic devices, so that the design of the electronic devices is more difficult.
Based on the above, the embodiment of the invention provides a thin film bulk acoustic resonator, a manufacturing method thereof, a filter and electronic equipment, which effectively solve the technical problems existing in the prior art, integrate a capacitor in the thin film bulk acoustic resonator, and further reduce or even discard the use of a passive integrated circuit chip, thereby increasing the effective design area of the filter and the electronic equipment and reducing the design difficulty.
In order to achieve the above objective, the technical solutions provided by the embodiments of the present invention are described in detail below, with reference to fig. 1 to 24.
Referring to fig. 1, a schematic structural diagram of a thin film bulk acoustic resonator according to an embodiment of the present invention is shown, where the thin film bulk acoustic resonator according to the embodiment of the present invention includes:
the piezoelectric device comprises a substrate 100, and a first electrode layer, a piezoelectric layer 300, a second electrode layer and a passivation layer 500 which are positioned on one side of the substrate 100 and are sequentially overlapped, wherein the first electrode layer comprises a lower electrode 210, the second electrode layer comprises an upper electrode 410, and a cavity 600 is formed between the lower electrode 210 and the substrate 100; the overlapping area of the cavity 600, the lower electrode 210, the piezoelectric layer 300, and the upper electrode 410 in the thickness direction is an effective area of the thin film bulk acoustic resonator.
A conductive layer on a side of the passivation layer 500 facing away from the substrate 100, the conductive layer including at least one main electrode plate 710, wherein the main electrode plate 710 at least partially overlaps one of the first electrode layer and the second electrode layer in a direction from the substrate 100 to the passivation layer 500, as illustrated by an overlapping portion 220 of the first electrode layer and the main electrode plate 710, and an overlapping portion 420 of the second electrode layer and the main electrode plate 710.
The capacitor formed by the overlapping area of the first electrode layer and one main electrode plate is taken as a first capacitor, and the overlapping area of the second electrode layer and one main electrode plate is taken as a second capacitor. The thin film bulk acoustic resonator provided by the embodiment of the invention can comprise a first capacitor; alternatively, the thin film bulk acoustic resonator may comprise a second capacitance; alternatively, when the size of the thin film bulk acoustic resonator is sufficient, a plurality of first capacitances, or a plurality of second capacitances, or a combination of at least one first capacitance and at least one second capacitance may be included, which is not particularly limited to this invention.
It can be appreciated that in the technical solution provided by the embodiments of the present invention, in the direction from the substrate to the passivation layer, the main electrode plate at least partially overlaps one of the first electrode layer and the second electrode layer, so that a capacitor structure is formed at the overlapping portion. Therefore, the capacitor structure is integrated in the thin film bulk acoustic resonator, the use of a passive integrated circuit chip can be reduced or even abandoned, the effective design area of the filter and the electronic equipment is enlarged, and the design difficulty is reduced.
Furthermore, the thin film bulk acoustic resonator provided by the embodiment of the invention can further comprise an inductor, wherein the inductor can be a winding inductor surrounding the substrate, so that the capacitor and the capacitor are integrated in the thin film bulk acoustic resonator at the same time, the integration level of the thin film bulk acoustic resonator is further improved, the use of a passive integrated circuit chip is reduced or even abandoned, the effective design area of the filter and the electronic equipment is further increased, and the design difficulty is reduced.
Referring to fig. 2, a schematic structural diagram of another thin film bulk acoustic resonator according to an embodiment of the present invention is shown, where the conductive layer further includes an upper connection electrode 722 and a lower connection electrode 721, the upper connection electrode 722 penetrates the passivation layer 500 to be connected with the upper electrode 410, and the lower connection electrode 721 penetrates the passivation layer 500 and the piezoelectric layer 300 to be connected with the lower electrode 210.
It can be understood that in the embodiment of the invention, the upper connecting electrode is connected with the upper electrode, and the lower connecting electrode is connected with the lower electrode, so that the upper connecting electrode and the lower connecting electrode can be used as pins, and the thin film bulk acoustic resonator is convenient to be connected with an external circuit.
It should be noted that, in the embodiment of the present invention, the connection signals are led out through the lines at the overlapping portions of the first electrode layer and the main electrode plate and the overlapping portions of the second electrode layer and the main electrode plate, which are not specifically shown in fig. 1 and fig. 2, and fig. 1 and fig. 2 are only used to illustrate the structural layer relationship and the lead-out manners of the upper electrode and the lower electrode of the thin film bulk acoustic resonator, and the line lead-out manners of the overlapping portions of the first electrode layer and the second electrode and the main electrode plate are shown in the following drawings. Several specific structures and modifications of the thin film bulk acoustic resonator according to the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 3, a schematic structural diagram of another thin film bulk acoustic resonator according to an embodiment of the present invention is shown, wherein the lower electrode 210 provided by the embodiment of the present invention extends toward a first side of the cavity 600, and the upper electrode 410 extends toward a second side of the cavity 600, and the first side of the cavity 600 is opposite to the second side thereof. The overlapping portion 220 of the first electrode layer and the main electrode plate 710 is located at a first side of the cavity 500, and the lower electrode 210 extends in contact with the overlapping portion 220 of the first electrode layer and the main electrode plate 710.
It can be appreciated that, in the embodiment of the invention, the overlapping portion of the first electrode layer and the main electrode plate is in contact with the lower electrode, and on the basis that the overlapping portion of the first electrode layer and the main electrode plate form a first capacitor, the overlapping portion of the first electrode layer and the main electrode plate can be electrified through the lower electrode without the need of electrifying the overlapping portion of the first electrode layer and the main electrode plate through an external circuit, thereby simplifying the design difficulty and complexity of the device.
Referring to fig. 4, a schematic structural diagram of another thin film bulk acoustic resonator according to an embodiment of the present invention is shown, wherein the lower electrode 210 provided by the embodiment of the present invention extends toward a first side of the cavity 600, and the upper electrode 410 extends toward a second side of the cavity 600, and the first side of the cavity 600 is opposite to the second side thereof. The overlapping portion 220 of the first electrode layer and the main electrode plate 710 is located at a first side of the cavity 600 with a gap between the lower electrode 210 and the overlapping portion 220 of the first electrode layer and the main electrode plate 710, wherein the conductive layer further includes a first connection electrode 730, and the first connection electrode 730 penetrates the passivation layer 500 and the piezoelectric layer 300 to be connected to the overlapping portion 220 of the first electrode layer and the main electrode plate 710. It should be noted that, the overlapping portion 220 of the first electrode layer and the main electrode plate 710 and the extending portion of the upper electrode 410 on the second side of the cavity 600 have no overlapping area.
It can be understood that the overlapping portion of the first electrode layer and the main electrode plate is isolated from the lower electrode, so that the first connecting electrode penetrates through the passivation layer and the piezoelectric layer and is connected with the overlapping portion of the first electrode layer and the main electrode plate to serve as a pin, and the purpose of electrifying the overlapping portion of the first electrode layer and the main electrode plate is achieved by electrifying the first connecting electrode on the basis that the overlapping portion of the first electrode layer and the main electrode plate forms a first capacitor with the main electrode plate.
Optionally, when the conductive layer includes the lower connection electrode, and the first connection electrode is located the first side of cavity, the first connection electrode still can contact with the lower connection electrode and link to each other, and then when powering up the lower electrode through the lower connection electrode, reaches the purpose of powering up the overlap portion of first electrode layer and main polar plate, has saved the quantity and the corresponding wiring of pin.
Referring to fig. 5, a schematic structural diagram of a thin film bulk acoustic resonator according to an embodiment of the present invention is shown, wherein the lower electrode 210 provided in the embodiment of the present invention extends toward a first side of the cavity 600, and the upper electrode 410 extends toward a second side of the cavity 600, and the first side of the cavity 600 is opposite to the second side thereof. The overlapping portion 220 of the first electrode layer and the main electrode plate 710 is located at the second side of the cavity 600 and the lower electrode 210 is isolated from the overlapping portion 220 of the first electrode layer and the main electrode plate, wherein the conductive layer further includes a first connection electrode 730, and the first connection electrode 730 penetrates the passivation layer 500 and the piezoelectric layer 300 to be connected to the overlapping portion 220 of the first electrode layer and the main electrode plate.
It can be understood that the overlapping portion of the first electrode layer and the main electrode plate is isolated from the lower electrode, so that the first connecting electrode penetrates through the passivation layer and the piezoelectric layer and is connected with the overlapping portion of the first electrode layer and the main electrode plate to serve as a pin, and the purpose of electrifying the overlapping portion of the first electrode layer and the main electrode plate is achieved by electrifying the first connecting electrode on the basis that the overlapping portion of the first electrode layer and the main electrode plate forms a first capacitor with the main electrode plate. Meanwhile, the overlapped part of the first electrode layer and the main electrode plate is arranged on the second side of the cavity, so that the application scene of the film bulk acoustic resonator can be enlarged.
Referring to fig. 6, which is a schematic structural diagram of another film bulk acoustic resonator according to an embodiment of the present invention, when the overlapping portion 220 of the first electrode layer and the main electrode plate 710 is located at the second side of the cavity 600, the connecting electrode 730 may extend to the area where the upper electrode 410 is located, and the first connecting electrode 730 penetrates through the passivation layer 500 to connect with the upper electrode 410, so that the purpose of simultaneously powering on the overlapping portion 220 of the first electrode layer and the main electrode plate 710 is achieved when the upper electrode 410 is powered on.
As further shown in fig. 6, when the thin film bulk acoustic resonator provided in the embodiment of the present invention includes the upper connection electrode 722, the extension portion of the first connection electrode 730 may multiplex the upper connection electrode 722, which is equivalent to that the first connection electrode 730 is in contact connection with the upper connection electrode 722, so that the pin number and the corresponding wiring are saved.
Referring to fig. 7, a schematic structural diagram of a thin film bulk acoustic resonator according to an embodiment of the present invention is shown, where, at the first capacitor, a portion of the piezoelectric layer 300 corresponding to the main pole plate 710 is a first groove, and the main pole plate 710 is located in the first groove.
It can be appreciated that the piezoelectric layer provided by the embodiment of the invention is provided with the first groove, and the main electrode plate is arranged in the first groove, so that the distance between the main electrode plate of the first capacitor and the overlapped part of the first electrode layer and the main electrode plate is reduced, and the capacitance value of the first capacitor can be increased. It should be noted that, the depth of the first groove is not limited in the embodiment of the present invention, and the purpose of adjusting the capacitance value of the first capacitor can be achieved by adjusting the depth of the first groove.
Referring to fig. 8, a schematic structural diagram of another thin film bulk acoustic resonator according to an embodiment of the present invention is shown, wherein the lower electrode 210 provided by the embodiment of the present invention extends toward a first side of the cavity 600, and the upper electrode 410 extends toward a second side of the cavity 600, and the first side of the cavity 600 is opposite to the second side thereof. The overlapping portion 420 of the second electrode layer and the main electrode plate 710 is located at the second side of the cavity 600, and the upper electrode 410 extends to be in contact with the overlapping portion 420 of the second electrode layer and the main electrode plate 710.
It can be appreciated that, in the embodiment of the invention, the overlapping portion of the second electrode layer and the main electrode plate is in contact with the upper electrode, and on the basis that the overlapping portion of the second electrode layer and the main electrode plate form a second capacitor, the overlapping portion of the second electrode layer and the main electrode plate can be electrified through the lower electrode, and the overlapping portion of the second electrode layer and the main electrode plate is not required to be electrified through an external circuit, so that the design difficulty and complexity of the device are simplified.
Referring to fig. 9, a schematic structural diagram of a further thin film bulk acoustic resonator according to an embodiment of the present invention is shown, wherein the lower electrode 210 provided in the embodiment of the present invention extends toward a first side of the cavity 600, and the upper electrode 410 extends toward a second side of the cavity 600, and the first side of the cavity 600 is opposite to the second side thereof. The overlapping portion 420 of the second electrode layer and the main pole plate 710 is located at the second side of the cavity 600, and a gap is provided between the upper electrode 410 and the overlapping portion 420 of the second electrode layer and the main pole plate 710; wherein the conductive layer further includes a second connection electrode 740, and the second connection electrode 740 is connected to the overlapping portion 420 of the main electrode plate 710 through the passivation layer 500 and the second electrode layer.
It can be understood that the overlapping portion of the second electrode layer and the main electrode plate is isolated from the upper electrode, so that the second connecting electrode penetrates through the passivation layer and is connected with the overlapping portion of the second electrode layer and the main electrode plate to serve as a pin, and the purpose of electrifying the overlapping portion of the second electrode layer and the main electrode plate is achieved by electrifying the second connecting electrode on the basis that the second capacitor is formed by the overlapping portion of the second electrode layer and the main electrode plate.
Referring to fig. 10, a schematic structural diagram of another thin film bulk acoustic resonator according to an embodiment of the present invention is shown, where the two connection electrodes 740 provided in the embodiment of the present invention extend to the area where the upper electrode 410 is located, and the second connection electrode 740 penetrates through the passivation layer 500 to be connected with the upper electrode 410, so that when the upper electrode 410 is powered on, the purpose of simultaneously powering on the overlapping portion 420 of the second electrode layer and the main electrode 710 is achieved.
As further shown in fig. 10, when the thin film bulk acoustic resonator provided in the embodiment of the present invention includes the upper connection electrode 722, the extension portion of the second connection electrode 740 may multiplex the upper connection electrode 722, which is equivalent to that the second connection electrode 740 is in contact connection with the upper connection electrode 722, so that the pin number and the corresponding wiring are saved.
It should be noted that, the manners of forming the first capacitor and the second capacitor shown in fig. 3 to 10 provided in the embodiments of the present invention are only a few of the manners of forming the capacitor in all the embodiments of the present invention, and in other embodiments of the present invention, the first capacitor and the second capacitor may be formed for other structures, which is not particularly limited to this embodiment of the present invention.
In an embodiment of the present invention, in order to optimally adjust the capacitance value of the capacitor, the present invention may be implemented by adjusting the spacing between the main electrode plate and the overlapping portion of the first electrode layer and the main electrode plate (or the overlapping portion of the second electrode layer and the main electrode plate), and adjusting the overlapping area between the main electrode plate and the overlapping portion of the first electrode layer and the main electrode plate (or the overlapping portion of the second electrode layer and the main electrode plate). In addition, under the condition that parameters such as the size of the film bulk acoustic resonator are fixed, the embodiment of the invention can also be realized by adjusting the dielectric constants of materials between the main pole plate and the overlapped part of the first electrode layer and the main pole plate (or the overlapped part of the second electrode layer and the main pole plate); that is, the materials of all areas of the passivation layer provided by the embodiment of the invention are the same; or the passivation layer comprises a first area corresponding to the main polar plate, wherein the material of the passivation layer corresponding to the first area is different from the material of the rest areas, and the material of the first area is further adjusted, so that the capacitance value of the capacitor is adjusted in a mode of adjusting the dielectric constant of the first area.
In an embodiment of the invention, the embodiment of the invention can realize a capacitor with a larger capacitance value, thereby expanding the application range of the film bulk acoustic resonator; that is, the relative dielectric constant of the passivation layer provided by the embodiment of the invention is larger than that of the piezoelectric layer, so that the capacitance value of the capacitor is larger. And the thickness of the passivation layer provided by the embodiment of the invention is smaller than that of the piezoelectric layer, so that the capacitance value of the capacitor can be correspondingly increased.
In an embodiment of the present invention, in order to improve performance and/or manufacturing efficiency of the thin film bulk acoustic resonator, the structure of the thin film bulk acoustic resonator may be further optimized. Referring specifically to fig. 11, a schematic structural diagram of another thin film bulk acoustic resonator according to an embodiment of the present invention is provided, where a seed layer 800 is further included between the first electrode layer and the substrate 100.
It can be appreciated that the seed layer and the overlapped part of the lower electrode and the first electrode layer, which are provided by the embodiment of the invention, are contacted with the surface of the main electrode plate facing to one side of the substrate, so that the metal deposition efficiency of the first electrode layer can be improved when the first electrode layer is formed after the seed layer is formed in the process of manufacturing the thin film bulk acoustic resonator.
And referring to fig. 12, a schematic structural diagram of a film bulk acoustic resonator according to an embodiment of the present invention is provided, wherein an air wing structure 420 is formed between the upper electrode 410 and the piezoelectric layer 500 at an effective area of the film bulk acoustic resonator, wherein the air wing structure 420 may be located at an area corresponding to two sides of the cavity 600, so as to improve the performance of the film bulk acoustic resonator for suppressing a hybrid mode.
In an embodiment of the present invention, the surface of the substrate 100 facing the cavity 600 is flush, and the cavity 600 is located on the substrate 100 in a convex shape, as shown in any of fig. 1 to 12.
Alternatively, the cavity provided by the embodiment of the invention can also be positioned in the substrate. Referring specifically to fig. 13, a schematic structural diagram of another thin film bulk acoustic resonator according to an embodiment of the present invention is shown, where a second groove is formed at a position of the substrate 100 corresponding to the cavity, and the cavity 600 is located in the second groove.
Correspondingly, the embodiment of the invention also provides a manufacturing method of the film bulk acoustic resonator, which is used for manufacturing the film bulk acoustic resonator provided by any embodiment. Referring to fig. 14, a flowchart of a method for manufacturing a thin film bulk acoustic resonator according to an embodiment of the present invention is shown, where the method includes:
S1, providing a substrate.
In an embodiment of the present invention, the substrate may be made of silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), silicon germanium carbide (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP) or other III/V compound semiconductor materials, or may be a multi-layer stacked structure comprising the above semiconductor materials. The substrate may be a silicon-on-insulator (SOI), a silicon-on-insulator (SSOI), a silicon-germanium-on-insulator (S-SiGeOI), a silicon-germanium-on-insulator (SiGeOI) or a germanium-on-insulator (GeOI), or may be a double-sided polished silicon wafer (Double Side Polished Wafers, DSP), or may be a ceramic substrate such as alumina, a quartz or glass substrate, or the like, and the present invention is not particularly limited thereto.
S2, sequentially superposing and forming a sacrificial layer, a first electrode layer, a piezoelectric layer, a second electrode layer and a passivation layer on one side of the substrate, wherein the first electrode layer comprises a lower electrode, the second electrode layer comprises an upper electrode, and the sacrificial layer, the lower electrode, the piezoelectric layer and the upper electrode are overlapped in the thickness direction (namely, the direction from the substrate to the passivation layer).
Specifically, a sacrificial layer is first formed in the corresponding area of the cavity. And then forming a first electrode layer on the surfaces of the sacrificial layer and the substrate, wherein the first electrode layer may include a lower electrode, and may further include a portion overlapping the main electrode plate in a thickness direction; the first electrode layer may be a metal electrode layer or an alloy electrode layer, and the material of the first electrode layer may include at least one of copper (Cu), tungsten (W), platinum (Pt), aluminum (Al), ruthenium (Ru), molybdenum (Mo), gold (Au), etc.; the first electrode layer may be formed by a physical vapor deposition process, such as a magnetron sputtering process.
And then forming a piezoelectric layer on the surfaces of the sacrificial layer, the substrate and the first electrode layer, wherein the piezoelectric layer can be made of aluminum nitride (AlN), scandium-doped aluminum nitride (AlScN), zinc oxide (ZnO), lead zirconate titanate (PZT) and the like. Forming a second electrode layer over the piezoelectric layer, the second electrode layer including an upper electrode, and a functional region of the resonator being formed by overlapping portions of the lower electrode, the upper electrode, the piezoelectric layer, and the cavity in a thickness direction; in addition, the second electrode layer may further include a portion overlapping the main electrode plate in a thickness direction, wherein the material of the second electrode layer may be a metal electrode layer or an alloy electrode layer, and the material may include at least one of copper (Cu), tungsten (W), platinum (Pt), aluminum (Al), ruthenium (Ru), molybdenum (Mo), gold (Au), and the like; the second electrode layer may be formed by a physical vapor deposition process, such as a magnetron sputtering process.
And finally forming a passivation layer on the second electrode layer. Wherein the passivation layerThe material may be silicon dioxide (SiO 2 ) Gallium nitride (GaN), silicon nitride (Si) 3 N 4 ) Dielectric materials such as aluminum nitride (AlN) are used to protect the resonator structure.
S3, forming a conductive layer on one side of the passivation layer, which is away from the substrate, wherein the conductive layer comprises at least one main polar plate; wherein the main electrode plate at least partially overlaps one of the first electrode layer and the second electrode layer in a direction from the substrate to the passivation layer.
Optionally, the conductive layer may further include an upper connection electrode, a lower connection electrode, a first connection electrode, and a second connection electrode, so that after the passivation layer is formed, a through hole penetrating the passivation layer or a stack of the passivation layer and the piezoelectric layer is formed at the corresponding electrode, and the upper connection electrode, the lower connection electrode, the first connection electrode, and the second connection electrode are connected in contact with the corresponding circuit.
S4, removing the sacrificial layer to form a cavity, wherein the cavity is positioned between the lower electrode and the substrate, and an overlapping area of the cavity, the lower electrode, the piezoelectric layer and the upper electrode in the thickness direction is an effective area of the film bulk acoustic resonator.
Correspondingly, the embodiment of the invention also provides a filter, which comprises the film bulk acoustic resonator provided by any embodiment.
It should be noted that the thin film bulk acoustic resonator provided in the embodiment of the present invention may be applied to a plurality of specific filters, and the beneficial effects thereof may be different according to the types of the filters. Specifically, the filter provided by the embodiment of the invention may include a first serial branch, where the first serial branch includes a plurality of thin film bulk acoustic resonators connected in series, where in the first serial branch, a first capacitor and/or a second capacitor of at least one thin film bulk acoustic resonator is connected in series in the first serial branch. Referring to fig. 15 and 16, fig. 15 is a schematic structural diagram of a filter according to an embodiment of the present invention, and fig. 16 is an equivalent circuit diagram of fig. 15. The filter comprises a first series branch composed of film bulk acoustic wave filters S1 and S2 … …, a capacitor C is connected IN the first series branch IN series, P1 is a parallel film bulk acoustic wave filter, IN is a signal input end, GND is a grounding end, and the capacitor C can be formed by electrically connecting any one or more capacitors included IN the film bulk acoustic wave filter; the capacitor C is connected in series in the first series branch circuit to realize the frequency modulation function.
Or, the filter provided by the embodiment of the invention includes a second serial branch, where the second serial branch includes a plurality of thin film bulk acoustic resonators connected in series, and in the second serial branch, a first capacitor and/or a second capacitor of at least one thin film bulk acoustic resonator is connected in series with a signal input end of the second serial branch. Referring to fig. 17 and 18, fig. 17 is a schematic structural diagram of another filter according to an embodiment of the present invention, and fig. 18 is an equivalent circuit diagram of fig. 17. The filter includes a second serial branch composed of film bulk acoustic wave filters S1 and S2 … …, a capacitor C is connected IN series with a signal input end IN of the second serial branch, P1 is a parallel film bulk acoustic wave filter, GND is a ground end, and the capacitor C may be formed by electrically connecting any one or more capacitors included IN the film bulk acoustic wave filters. The capacitor C is connected to the signal input end IN to realize the function of impedance matching.
Or, the filter provided by the embodiment of the invention includes a third serial branch, where the third serial branch includes a plurality of thin film bulk acoustic resonators connected in series, and in the third serial branch, a first capacitor and/or a second capacitor of at least one thin film bulk acoustic resonator is connected in parallel to the third serial branch. Referring to fig. 19 and 20, fig. 19 is a schematic structural diagram of a further filter according to an embodiment of the present invention, and fig. 20 is an equivalent circuit diagram of fig. 19. The filter comprises a third serial branch composed of film bulk acoustic wave filters S1, S2 and S3, a capacitor C is connected IN parallel IN the third serial branch, IN is a signal input end, P1 and P2 are parallel film bulk acoustic wave filters, GND is a grounding end, OUT is an output end, and the capacitor C can be formed by electrically connecting any one or more capacitors included IN the film bulk acoustic wave filters. The first capacitor and the second capacitor provided by the embodiment of the invention not only can realize the capacitance value of 0.1-1pF, but also can realize the larger capacitance value of 1-10pF, so that the arrangement of the parallel capacitors in the resonator branches connected in series (or the arrangement of the series capacitors in the resonators connected in parallel) can improve the isolation band inhibition effect of the filter and further improve the performance of the filter. Compared with the filter with the same size, the roll-off characteristic of the filter formed by the film bulk acoustic resonator of the embodiment of the invention in an attenuation band is obviously improved.
Or, the filter provided by the embodiment of the invention includes a first parallel branch, where the first parallel branch includes a thin film bulk acoustic resonator electrically connected to a ground terminal, and a first capacitor and/or a second capacitor of the thin film bulk acoustic resonator electrically connected to the ground terminal are connected in series to the ground terminal. Referring to fig. 21 and 22, fig. 21 is a schematic structural diagram of another filter according to an embodiment of the present invention, and fig. 22 is an equivalent circuit diagram of fig. 21. The filter includes a series branch composed of thin film bulk acoustic wave filters S1 and S2 and … …, P1 is a thin film bulk acoustic wave filter in the first parallel branch, GND is a ground terminal, a capacitor C is connected in series between the ground terminals GND and P1, and the capacitor C may be formed by electrically connecting any one or more capacitors included in the thin film bulk acoustic wave filters. It can be appreciated that the capacitor provided by the embodiment of the invention can be used as a parallel-connected ground capacitor or a multi-path common-ground capacitor.
Or, the filter provided in the embodiment of the present invention includes a fourth serial branch and a second parallel branch, where the fourth serial branch includes a plurality of the thin film bulk acoustic resonators connected in series, and the second parallel branch includes a thin film bulk acoustic resonator electrically connected to a ground terminal, and in the fourth serial branch, a first capacitor and/or a second capacitor of at least one of the thin film bulk acoustic resonators is connected in parallel to the fourth serial branch, and a first capacitor and/or a second capacitor of the thin film bulk acoustic resonator electrically connected to the ground terminal is connected in series to the ground terminal. Referring to fig. 23 and 24, fig. 23 is a schematic structural diagram of another filter according to an embodiment of the present invention, and fig. 24 is an equivalent circuit diagram of fig. 23. The filter includes a fourth serial branch composed of thin film bulk acoustic wave filters S1, S2 and S3, IN is a signal input end, P1 and P2 are thin film bulk acoustic wave filters IN a second parallel branch, GND is a ground end, OUT is an output end, and the capacitor C1 and the capacitor C2 may be any one or more capacitors included IN the thin film bulk acoustic wave filters and are electrically connected.
It should be noted that the filters provided in the above embodiments of the present invention are only a few of all applicable filters of the present invention, and the present invention is not limited in particular.
Correspondingly, the embodiment of the invention also provides electronic equipment which comprises the film bulk acoustic resonator and/or the filter, wherein the film bulk acoustic resonator is provided by any one of the above embodiments, and/or the filter comprises the film bulk acoustic resonator provided by any one of the above embodiments.
The embodiment of the invention provides a thin film bulk acoustic resonator, a manufacturing method thereof, a filter and electronic equipment, wherein in the direction from a substrate to a passivation layer, a main electrode plate at least partially overlaps one of a first electrode layer and a second electrode layer, and a capacitor structure is formed at the overlapped part. Therefore, the capacitor structure is integrated in the thin film bulk acoustic resonator, the use of a passive integrated circuit chip can be reduced or even abandoned, the effective design area of the filter and the electronic equipment is enlarged, and the design difficulty is reduced.
In the description of the present invention, it should be understood that the directions or positional relationships as indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., are based on the directions or positional relationships shown in the drawings are merely for convenience of description and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the invention.
Furthermore, the terms "first," "second," and the like, as used herein, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, terms such as "mounted," "connected," "secured," and the like are to be construed broadly and may be, for example, fixedly attached, detachably attached, or integrally formed; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
In the present disclosure, the terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.

Claims (18)

1. A thin film bulk acoustic resonator, comprising:
The piezoelectric device comprises a substrate, a first electrode layer, a piezoelectric layer, a second electrode layer and a passivation layer, wherein the first electrode layer, the piezoelectric layer, the second electrode layer and the passivation layer are positioned on one side of the substrate and are sequentially overlapped, the first electrode layer comprises a lower electrode, the second electrode layer comprises an upper electrode, and a cavity is formed between the lower electrode and the substrate; overlapping areas of the cavity, the lower electrode, the piezoelectric layer and the upper electrode in the thickness direction are effective areas of the film bulk acoustic resonator;
and a conductive layer on a side of the passivation layer facing away from the substrate, the conductive layer including at least one main electrode plate, wherein the main electrode plate at least partially overlaps one of the first electrode layer and the second electrode layer in a direction from the substrate to the passivation layer.
2. The thin film bulk acoustic resonator of claim 1 wherein the lower electrode extends toward a first side of the cavity and the upper electrode extends toward a second side of the cavity, the first side of the cavity being opposite the second side thereof;
the overlapping portion of the first electrode layer and the main electrode plate is located at a first side of the cavity, and the lower electrode extends to be in contact connection with the overlapping portion of the first electrode layer and the main electrode plate.
3. The thin film bulk acoustic resonator of claim 1 wherein the lower electrode extends toward a first side of the cavity and the upper electrode extends toward a second side of the cavity, the first side of the cavity being opposite the second side thereof;
the overlapping part of the first electrode layer and the main electrode plate is positioned at the first side of the cavity, and a gap is reserved between the lower electrode and the overlapping part of the first electrode layer and the main electrode plate, wherein the conductive layer further comprises a first connecting electrode, and the first connecting electrode penetrates through the passivation layer and the piezoelectric layer and is connected with the overlapping part of the first electrode layer and the main electrode plate.
4. The thin film bulk acoustic resonator of claim 1 wherein the lower electrode extends toward a first side of the cavity and the upper electrode extends toward a second side of the cavity, the first side of the cavity being opposite the second side thereof;
the overlapping part of the first electrode layer and the main electrode plate is positioned at the first side of the cavity, and the lower electrode is isolated from the overlapping part of the first electrode layer and the main electrode plate, wherein the conductive layer further comprises a first connecting electrode, and the first connecting electrode penetrates through the passivation layer and the piezoelectric layer to be connected with the overlapping part of the first electrode layer and the main electrode plate.
5. The thin film bulk acoustic resonator of claim 4, wherein the connection electrode extends to a region where the upper electrode is located, and the first connection electrode is connected to the upper electrode through the passivation layer.
6. The thin film bulk acoustic resonator of claim 1, wherein at the first capacitance, the piezoelectric layer is a first recess corresponding to the main pole plate, and the main pole plate is located in the first recess.
7. The thin film bulk acoustic resonator of claim 1 wherein the lower electrode extends toward a first side of the cavity and the upper electrode extends toward a second side of the cavity, the first side of the cavity being opposite the second side thereof;
the overlapping part of the second electrode layer and the main electrode plate is positioned at the second side of the cavity, and the upper electrode extends to be in contact connection with the overlapping part of the second electrode layer and the main electrode plate.
8. The thin film bulk acoustic resonator of claim 1 wherein the lower electrode extends toward a first side of the cavity and the upper electrode extends toward a second side of the cavity, the first side of the cavity being opposite the second side thereof;
An overlapping portion of the second electrode layer and the main electrode plate is located at a second side of the cavity, and a gap is formed between the upper electrode and the overlapping portion of the second electrode layer and the main electrode plate; the conducting layer further comprises a second connecting electrode, and the second connecting electrode penetrates through the passivation layer and is connected with the overlapping part of the second electrode layer and the main electrode plate.
9. The thin film bulk acoustic resonator of claim 8, wherein the two connection electrodes extend to the region where the upper electrode is located, and the second connection electrode is connected to the upper electrode through the passivation layer.
10. The thin film bulk acoustic resonator of claim 1, wherein the passivation layer regions are the same material;
or the passivation layer comprises a first area corresponding to the main polar plate, wherein the material of the passivation layer corresponding to the first area is different from the material of the rest areas.
11. The thin film bulk acoustic resonator of claim 1, wherein the third electrode further comprises an upper connection electrode and a lower connection electrode, the upper connection electrode being connected to the upper electrode through the passivation layer, the lower connection electrode being connected to the lower electrode through the passivation layer and the piezoelectric layer.
12. The thin film bulk acoustic resonator of claim 1, further comprising a seed layer between the first electrode layer and the substrate.
13. The thin film bulk acoustic resonator of claim 1, wherein an air wing structure is formed between the upper electrode and the piezoelectric layer at an active region of the thin film bulk acoustic resonator.
14. The thin film bulk acoustic resonator of claim 1, wherein a side surface of the substrate facing the cavity is flush;
or, the substrate is provided with a second groove corresponding to the cavity, and the cavity is positioned in the second groove.
15. A method for manufacturing a thin film bulk acoustic resonator according to any one of claims 1 to 14, wherein the method comprises:
providing a substrate;
a sacrificial layer, a first electrode layer, a piezoelectric layer, a second electrode layer and a passivation layer are sequentially formed on one side of the substrate in a superposition mode, wherein the first electrode layer comprises a lower electrode, the second electrode layer comprises an upper electrode, and the sacrificial layer, the lower electrode, the piezoelectric layer and the upper electrode are overlapped in the thickness direction;
Forming a conductive layer on a side of the passivation layer facing away from the substrate, the conductive layer including at least one main electrode plate, wherein the main electrode plate at least partially overlaps one of the first electrode layer and the second electrode layer in a direction from the substrate to the passivation layer;
and removing the sacrificial layer to form a cavity, wherein the cavity is positioned between the lower electrode and the substrate, and the overlapping area of the cavity, the lower electrode, the piezoelectric layer and the upper electrode in the thickness direction is an effective area of the film bulk acoustic resonator.
16. A filter comprising a thin film bulk acoustic resonator as claimed in any one of claims 1 to 14.
17. The filter of claim 16, wherein the filter comprises a first series leg, wherein the first series leg comprises a plurality of the thin film bulk acoustic resonators in series, wherein in the first series leg, a first capacitance and/or a second capacitance of at least one of the thin film bulk acoustic resonators is in series in the first series leg;
or, the filter comprises a second serial branch, wherein the second serial branch comprises a plurality of thin film bulk acoustic resonators connected in series, and in the second serial branch, a first capacitor and/or a second capacitor of at least one thin film bulk acoustic resonator is/are connected in series with a signal input end of the second serial branch;
Or, the filter comprises a third serial branch, wherein the third serial branch comprises a plurality of thin film bulk acoustic resonators connected in series, and in the third serial branch, a first capacitor and/or a second capacitor of at least one thin film bulk acoustic resonator is/are connected in parallel in the third serial branch;
or the filter comprises a first parallel branch, wherein the first parallel branch comprises the film bulk acoustic resonator which is used for being electrically connected with a grounding end, and a first capacitor and/or a second capacitor of the film bulk acoustic resonator which is used for being electrically connected with the grounding end are/is connected in series with the grounding end;
alternatively, the filter includes a fourth serial branch and a second parallel branch, the fourth serial branch includes a plurality of the thin film bulk acoustic resonators connected in series, the second parallel branch includes the thin film bulk acoustic resonator electrically connected to the ground, wherein in the fourth serial branch, a first capacitance and/or a second capacitance of at least one of the thin film bulk acoustic resonators is connected in parallel to the fourth serial branch, and a first capacitance and/or a second capacitance of the thin film bulk acoustic resonator electrically connected to the ground is connected in series to the ground.
18. An electronic device comprising a thin film bulk acoustic resonator and/or a filter, wherein the thin film bulk acoustic resonator is a thin film bulk acoustic resonator as claimed in any one of claims 1 to 14 and/or the filter comprises a thin film bulk acoustic resonator as claimed in any one of claims 1 to 14.
CN202311414106.1A 2023-10-27 2023-10-27 Film bulk acoustic resonator, manufacturing method thereof, filter and electronic equipment Pending CN117375566A (en)

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