CN110676287A - Monolithic integrated radio frequency device, preparation method and integrated circuit system - Google Patents
Monolithic integrated radio frequency device, preparation method and integrated circuit system Download PDFInfo
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- CN110676287A CN110676287A CN201910796290.8A CN201910796290A CN110676287A CN 110676287 A CN110676287 A CN 110676287A CN 201910796290 A CN201910796290 A CN 201910796290A CN 110676287 A CN110676287 A CN 110676287A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
- H03H9/0561—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/071—Mounting of piezoelectric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate
Abstract
The invention provides a monolithic integrated radio frequency device, a preparation method and an integrated circuit system, wherein the preparation method comprises the following steps: generating an epitaxial layer on a first substrate; processing the epitaxial layer into at least one electronic device, and forming a passivation layer with at least one through hole on one side of the electronic device far away from the first base layer; sequentially forming a piezoelectric film, a metal electrode and a Bragg reflection layer on a second substrate, and forming an electrode interconnection hole penetrating through the Bragg reflection layer; and bonding and connecting the Bragg reflection layer with the passivation layer, removing the second substrate, forming a top electrode and an electrode contact point on the piezoelectric film, and connecting the top electrode and the electrode contact point with the electronic device through the electrode interconnection hole. The invention can integrate a plurality of electronic devices of different types on the radio frequency front-end module in the same chip, thereby avoiding the problem of additional circuit design, reducing the electrical connection loss, reducing the assembly complexity and reducing the size and the cost of the radio frequency front-end module.
Description
Technical Field
The invention relates to the technical field of electronic communication devices, in particular to a monolithic integrated radio frequency device, a preparation method and an integrated circuit system.
Background
Wireless communication terminals have been widely and successfully deployed worldwide. Wireless communication terminal devices including cellular phones and smart phones are produced in excess of 10 billion annually in the world, and the number thereof is increasing year by year. With the widespread use of 4G/LTE and the proliferation of mobile data traffic, the big data era is also pushing the growth of the wireless communication handset market, which is expected to reach 20 billion stations per year in the coming years. Therefore, in order to cope with this huge market and the increasing demands of users, the functions of the wireless communication terminal are becoming more and more multifunctional.
Correspondingly, the multifunctional development of the wireless communication terminal puts high technical requirements on miniaturization, high frequency, high performance, low power consumption, low cost and the like on a radio frequency front end module of the wireless communication terminal.
To meet these technical requirements, the existing rf front-end module adopts a way of assembling a plurality of discrete chips on a single laminate board or PC board, but this way has a disadvantage that additional design wiring is required to interconnect different chips together, and connecting different chips by wiring causes loss of electrical connection and increases assembly complexity, size and cost of the rf front-end module.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a single-chip integrated radio frequency device, a preparation method and an integrated circuit, which can integrate a plurality of electronic devices of different types on a radio frequency front-end module into the same chip, avoid the problem that additional circuits need to be designed, reduce the electrical connection loss, reduce the assembly complexity and reduce the size and the cost of the radio frequency front-end module.
In order to solve the above problems, the present invention adopts a technical solution as follows: a method of fabricating a monolithically integrated radio frequency device for a radio frequency front end module, the method comprising: s1: generating an epitaxial layer on a first substrate, wherein the epitaxial layer comprises a first buffer layer, a second single crystal layer and a third single crystal layer which are sequentially stacked; s2: processing the epitaxial layer into at least one electronic device, and forming a passivation layer with at least one through hole on one side of the electronic device far away from the first base layer, wherein the electronic device comprises at least one of a power amplifier, a noise amplifier and a switch; s3: sequentially forming a piezoelectric film, a metal electrode and a Bragg reflection layer on a second substrate, and forming an electrode interconnection hole penetrating through the Bragg reflection layer; s4: and bonding and connecting the Bragg reflection layer with the passivation layer to electrically connect the electrode interconnection hole and the through hole, removing the second substrate, sequentially forming a top electrode and an electrode contact point on one side of the piezoelectric film, which is far away from the metal electrode, and connecting the top electrode and the electrode contact point with the electronic device through the electrode interconnection hole.
Furthermore, the number of the through holes is three, and the through holes are respectively connected with the source electrode, the drain electrode and the grid electrode of the electronic device.
Further, the number of the electrode interconnection holes is three, and objects penetrating through each electrode interconnection hole are not completely the same, and are respectively different from the through holes, and are opposite and electrically connected.
Further, the top electrode partially covers the piezoelectric film on the side away from the metal electrode, and is connected with the grid through one of the electrode interconnection holes.
Furthermore, the electrode contact point is arranged in a region, where the top electrode is not arranged, of the piezoelectric film on a side away from the metal electrode, and includes a first electrode contact point, a second electrode contact point, and a third electrode contact point, where the first electrode contact point and the third electrode contact point are respectively connected with the gate and the drain through the electrode interconnection hole, and the second electrode contact point is connected with the top electrode.
Furthermore, the metal electrode partially covers the piezoelectric film, and the bragg reflection layer covers the metal electrode and a part of the piezoelectric film, which is not covered by the metal electrode, on the side where the metal electrode is arranged.
Further, the Bragg reflection layer comprises a first material layer and a second material layer which are alternately stacked, the number of the first material layer and the second material layer is the same, the first material layer and the second material layer are at least two, and the acoustic impedance of the first material layer is different from that of the second material layer.
Furthermore, a first passivation layer is further arranged on one side, away from the piezoelectric thin film layer, of the Bragg reflection layer, the first passivation layer is arranged in a concave area of the Bragg reflection layer, and the Bragg reflection layer is leveled through the first passivation layer.
Based on the same inventive concept, the invention also provides a monolithically integrated radio frequency device, wherein the radio frequency device is obtained by the above monolithically integrated radio frequency device preparation method.
Based on the same inventive concept, the present invention further provides an integrated circuit system, which includes an amplifier, a duplexer, a filter, and a transceiving switch, wherein the duplexer and the filter are coupled to the amplifier and the transceiving switch, the amplifier includes at least one of a power amplifier and a low noise amplifier, and at least two of the amplifier, the duplexer, the filter, and the transceiving switch are disposed in the above monolithically integrated radio frequency device.
Compared with the prior art, the invention has the beneficial effects that: according to the invention, the electronic devices such as the power amplifier, the noise amplifier and the switch are prepared on the first substrate, the corresponding filter is prepared on the second substrate, the second substrate is inversely bonded on the first substrate, and the electronic device on the first substrate is bonded and connected with the filter on the second substrate, so that a plurality of electronic devices of different types on the radio frequency front-end module can be integrated in the same chip, the problem of additional circuit design is avoided, the electrical connection loss is reduced, the assembly complexity is reduced, and the size and the cost of the radio frequency front-end module are reduced.
Drawings
FIG. 1 is a flow chart of one embodiment of a method for fabricating a monolithically integrated RF device of the present invention;
FIG. 2a is a cross-sectional view of an embodiment of a monolithically integrated RF device in a method for fabricating a monolithically integrated RF device according to the present invention;
FIG. 2b is a top view of an embodiment of a monolithically integrated RF device in a method of manufacturing a monolithically integrated RF device according to the present invention;
fig. 3 is a structural diagram of an embodiment of an epitaxial layer formed on a first substrate in the method for manufacturing a monolithically integrated radio frequency device according to the present invention;
fig. 4 is a structural diagram of an embodiment of an electronic device formed by processing an epitaxial layer in the method for manufacturing a monolithically integrated radio frequency device according to the present invention;
FIG. 5 is a diagram illustrating an embodiment of a passivation layer formed on an electronic device in a method for fabricating a monolithically integrated RF device of the present invention;
FIG. 6 is a diagram illustrating an embodiment of a via hole formed in a passivation layer according to the method of the present invention;
FIG. 7 is a diagram illustrating an embodiment of a method for forming a piezoelectric film on a second substrate according to the present invention;
FIG. 8 is a diagram illustrating an embodiment of a method for forming a metal electrode on a piezoelectric film in a method for fabricating a monolithically integrated RF device according to the present invention;
FIG. 9 is a block diagram of one embodiment of forming electrode interconnect holes in a method of fabricating a monolithically integrated RF device of the present invention;
FIG. 10 is a diagram illustrating bonding of a Bragg reflector to a passivation layer according to an embodiment of the present invention;
FIG. 11 is a diagram illustrating an embodiment of removing the second substrate in the method for fabricating a monolithically integrated RF device of the present invention;
FIG. 12 is a block diagram illustrating one embodiment of the top electrode formation in the method of fabricating a monolithically integrated RF device of the present invention;
FIG. 13 is a block diagram illustrating one embodiment of forming electrode contacts in a method of fabricating a monolithically integrated RF device of the present invention;
FIG. 14 is a block diagram of one embodiment of a radio frequency device formed in the method of fabricating a monolithically integrated radio frequency device of the present invention;
FIG. 15 is a block diagram of an embodiment of an integrated circuit system according to the invention.
In the figure: 120. an electronic device; 110. a filter; 119. an electrode contact point; 135. a top electrode; 112. a piezoelectric film; 113. a metal electrode; 114. a first material layer; 116. a second material layer; 115. a first electrode interconnect hole; 117. a second electrode interconnection hole; 118. a first passivation layer; 129. a passivation layer; 124. a third single crystal layer; 123. a second monocrystalline layer; 122. a first buffer layer; 130. a through hole; 121. a first substrate; 111. A second substrate; 128. a first chip dicing lane; 131. a first metal layer; 125. a source electrode; 126. a gate electrode; 127. a drain electrode; 140. a second chip dicing lane; 141. an LNA; 142. PA; 143. a duplexer, a filter; 144. TX/RX switch.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and the detailed description, and it should be noted that any combination of the embodiments or technical features described below can be used to form a new embodiment without conflict.
Referring to fig. 1-14, fig. 1 is a flow chart illustrating a method for fabricating a monolithically integrated rf device according to an embodiment of the present invention; FIG. 2a is a cross-sectional view of an embodiment of a monolithically integrated RF device in a method for fabricating a monolithically integrated RF device according to the present invention; FIG. 2b is a top view of an embodiment of a monolithically integrated RF device in a method of manufacturing a monolithically integrated RF device according to the present invention; fig. 3 is a structural diagram of an embodiment of an epitaxial layer formed on a first substrate in the method for manufacturing a monolithically integrated radio frequency device according to the present invention; fig. 4 is a structural diagram of an embodiment of an electronic device formed by processing an epitaxial layer in the method for manufacturing a monolithically integrated radio frequency device according to the present invention; FIG. 5 is a diagram illustrating an embodiment of a passivation layer formed on an electronic device in a method for fabricating a monolithically integrated RF device of the present invention; FIG. 6 is a diagram illustrating an embodiment of a via hole formed in a passivation layer according to the method of the present invention; FIG. 7 is a diagram illustrating an embodiment of a method for forming a piezoelectric film on a second substrate according to the present invention; FIG. 8 is a diagram illustrating an embodiment of a method for forming a metal electrode on a piezoelectric film in a method for fabricating a monolithically integrated RF device according to the present invention; FIG. 9 is a block diagram of one embodiment of forming electrode interconnect holes in a method of fabricating a monolithically integrated RF device of the present invention; FIG. 10 is a diagram illustrating bonding of a Bragg reflector to a passivation layer according to an embodiment of the present invention; FIG. 11 is a diagram illustrating an embodiment of removing the second substrate in the method for fabricating a monolithically integrated RF device of the present invention; FIG. 12 is a block diagram illustrating one embodiment of the top electrode formation in the method of fabricating a monolithically integrated RF device of the present invention; FIG. 13 is a block diagram illustrating one embodiment of forming electrode contacts in a method of fabricating a monolithically integrated RF device of the present invention; fig. 14 is a structural diagram of an embodiment of a rf device formed in the method for manufacturing a monolithically integrated rf device of the present invention.
In the attached drawings of the specification, for simplicity and convenience of drawing, only one FBAR resonator is drawn in a filter part, only one transistor is drawn in an amplifier, a switch and the like, a filter can be formed by a plurality of FBAR resonators in actual preparation, and devices such as the amplifier, the switch and the like can be formed by a plurality of transistors, and the invention is within the protection scope of the invention patent, wherein a broken line in the attached drawings is a shielded structure. The method for fabricating the monolithically integrated radio frequency device of the present invention is explained in detail with reference to fig. 1 to 14.
In this embodiment, the monolithic integration of the electronics 120 for the radio frequency front end module comprises at least one filter 110, at least one electronics 120. The electronic device 120 includes at least one of a power amplifier, a noise amplifier, and a switch. The filter 110 includes a piezoelectric film 112, a metal electrode 113, a bragg reflective layer, a top electrode 135, and an electrode contact 119. Electrode contact 119, top electrode 135 is disposed on one side of filter 110. The electronic device 120 is bonded to the side of the filter 110 where the top electrode 135 is not provided. The metal electrode 113 is disposed on a side of the piezoelectric film 112 close to the electronic device 120, and the bragg reflective layer is disposed on a side of the metal electrode 113 away from the piezoelectric film 112. An electrode interconnection hole penetrating the bragg reflector is provided on the piezoelectric film 112. The filter 110 is electrically connected to the electronic device 120 through the electrode interconnection holes. The electronic device 120 comprises a third single crystal layer 124, a second single crystal layer 123 and a first buffer layer 122 which are sequentially stacked in a direction away from the filter 110, a passivation layer 129 is arranged on one side of the third single crystal layer 124 away from the second single crystal layer 123, the passivation layer 129 is in bonding connection with the Bragg reflection layer, at least one through hole 130 for electrically connecting the filter 110 and the electronic device 120 is arranged on the passivation layer 129, and the electronic device 120 is formed by processing the third single crystal layer 124, the second single crystal layer 123 and the first buffer layer 122.
In this embodiment, the filter 110 includes at least one of a single crystal or polycrystalline SMR resonator device, a single crystal or polycrystalline filter device.
In the present embodiment, the electronic device 120 includes a power amplifier, a low noise amplifier, a switch, and other devices having similar structures.
In this embodiment, the method for manufacturing a monolithically integrated rf device of the present invention includes the following steps:
s1: and generating an epitaxial layer on the first substrate, wherein the epitaxial layer comprises a first buffer layer, a second single crystal layer and a third single crystal layer which are sequentially stacked.
In this embodiment, the first substrate 121 serves as a growth substrate of an epitaxial layer, and the first substrate 121 may be at least one of a silicon substrate, a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate, an aluminum nitride substrate, and an AlxGa1-xN buffer layer substrate, and in other embodiments, may be another substrate that can be used as a substrate of an epitaxial layer, which is not limited herein.
The first buffer layer 122 covering the first substrate 121 may be made of aluminum nitride, and the thickness thereof is optimized according to time and cost, and any thickness is within the protection scope of the present invention.
In the present embodiment, when the electronic device 120 is formed as a single crystal structure, the first buffer layer 122 may be a superlattice buffer structure made of single crystal AlN, SiC, AlxGa1-xN, and other single crystal semiconductor materials.
The second single crystal layer 123 and the third single crystal layer 124 are made of two or three of GaN, AlN and AlxGa1-xN to form a multi-layered single crystal structure, wherein 0< x <1 in AlxGa1-xN, and the thickness of the second single crystal layer 123 and the thickness of the third single crystal layer 124 are both between 1 nm and 1500 nm.
In a specific embodiment, the sum of the thicknesses of the second single crystal layer 123 and the third single crystal layer 124 is between 100 nm and 2000 nm.
S2: the epitaxial layer is processed into at least one electronic device, and a passivation layer with at least one through hole is formed on one side of the electronic device far away from the first base layer, wherein the electronic device comprises at least one of a power amplifier, a noise amplifier and a switch.
The first buffer layer 122, the second single crystal layer 123, and the third single crystal layer 124, which form the epitaxial layers, are processed at the chip level to form at least one electronic device 120. The drawings illustrate the resulting electronic device 120 as a transistor, wherein the source 125, gate 126, and drain 127 of the transistor are sequentially disposed on the third single crystal layer 124.
In this embodiment, a plurality of electronic devices 120 may be formed on the first substrate 121, a first die street 128 is disposed between each electronic device 120, and the electronic devices 120 are separated by the first die street 128. The electronic device 120 formed on the first substrate 121 may be operated independently, or a plurality of devices may be cascaded to form a power amplifier, a low noise amplifier, a switch, and other devices required by the rf front end module.
The passivation layer 129 is formed on the side of the electronic device 120 away from the first substrate 121 by deposition, and the passivation layer 129 may be a material with a high dielectric constant, such as AlN, GaN, SiO2, and may have a thickness of 2 nm to 3 μm.
The through hole 130 on the passivation layer 129 is formed by dry etching or wet etching, and the aperture size of the through hole 130 is in the range of tens of nanometers to tens of micrometers, and is adjusted according to actual requirements, which is not limited herein.
In this embodiment, the first metal layer 131 is provided in the through hole 130, the first metal layer 131 is formed by plating or vapor deposition, the metal forming the first metal layer 131 may be a metal having good conductivity such as gold, silver, or aluminum, and the through hole 130 and the electronic component 120 are electrically connected by the first metal layer 131 to form an upper lead hole of an electrode.
In a specific embodiment, the electronic device 120 is formed as a transistor, the number of the through holes 130 is 3, and the source 125, the gate 126, and the drain 127 of the transistor are electrically connected to one through hole 130.
S3: a piezoelectric film, a metal electrode and a Bragg reflection layer are sequentially formed on the second substrate, and an electrode interconnection hole penetrating through the Bragg reflection layer is formed.
In this embodiment, the second substrate 111 is at least one of a silicon substrate, a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate, an aluminum nitride substrate, and an AlxGa1-xN buffer layer substrate, and in other embodiments, may be another substrate that can be used as an epitaxial growth substrate for the piezoelectric thin film 112, and is not limited herein.
The piezoelectric thin film 112 includes any one of single crystal AlN, polycrystalline AlN obtained by sputtering, ZnO, and PZT, and has a thickness of 0.01 to 10 μm.
The metal electrode 113 is formed on the side of the piezoelectric film 112 far away from the second substrate 111 by an electron beam lift-off method or a magnetron sputtering method, and partially covers the piezoelectric film 112, wherein the thickness of the metal electrode 113 is between 0.1 nm and 500 nm, and the material forming the metal electrode 113 may be molybdenum, aluminum, ruthenium, tungsten or titanium material and a combination thereof.
After the metal electrode 113 is formed on the piezoelectric film 112, a bragg reflection layer is formed on the metal electrode 113 and the piezoelectric film 112, the bragg reflection layer covers the metal electrode 113, and the bragg reflection layer covers the metal electrode 113 and a part of the bragg reflection layer, which is not covered by the metal electrode 113, on the side of the piezoelectric film 112 where the metal electrode 113 is arranged includes a first material layer 114 and a second material layer 116 which are alternately overlapped, the first material layer 114 and the second material layer 116 are equal in number and are both at least two layers, and the acoustic impedances 116 of the first material layer 114 and the second material layer are different. The first material layer 114 and the second material layer 116 have a large acoustic impedance difference, and the specific difference between the two acoustic impedances can be set according to actual needs, which is not limited herein.
The bragg reflection layer is further provided with a first passivation layer 118 on a side away from the piezoelectric film 112, the first passivation layer 118 is disposed in a recessed region of the bragg reflection layer, and the side of the bragg reflection layer away from the piezoelectric film 112 is planarized by the first passivation layer 118 so as to be bonded with the filter 110 and the electronic device 120.
In a specific embodiment, the number of the electrode interconnection holes is three, and each of the electrode interconnection holes does not penetrate the same object, and the different through holes 130 are opposite and electrically connected. Wherein the electrode interconnection holes include two first electrode interconnection holes 115 and one second electrode interconnection hole 117, and the first electrode interconnection holes 115 and the second electrode interconnection holes 117 are spaced apart from each other. The second electrode interconnection hole 117 electrically connects with the metal electrode 113 through the bragg reflector, the first electrode interconnection hole 115 adjacent to the second electrode interconnection hole 117 penetrates the bragg reflector, the metal electrode 113, and the piezoelectric film 112, and the other first electrode interconnection hole 115 penetrates the bragg reflector, the first passivation layer 118, and the piezoelectric film 112.
The filter 110 on the second substrate 111 can work alone, or a plurality of filters 110 can be cascaded to form any filter 110 in any currently applied or not applied frequency band.
S4: and bonding and connecting the Bragg reflection layer with the passivation layer, so that the filter is electrically connected with the electronic device through the electrode interconnection hole and the through hole, removing the second substrate, sequentially forming a top electrode and an electrode contact point on one side of the piezoelectric film, which is far away from the metal electrode, and connecting the top electrode and the electrode contact point with the electronic device through the electrode interconnection hole.
The passivation layer 129 is bonded to the bragg reflector layer and the first passivation layer 118. The bonding manner of the passivation layer 129 and the bragg reflector may be any bonding manner available in the art, and is not limited herein.
In the present embodiment, the manner of removing the second substrate 111 may be any one of a laser lift-off method, mechanical thinning combined with dry etching, and wet etching.
In the present embodiment, the top electrode 135 partially covers the side of the piezoelectric thin film 112 away from the first substrate 121, the method for preparing the top electrode 135 includes any one of an electron beam evaporation lift-off method, a magnetron sputtering metal electrode layer combined with dry etching and wet etching, the thickness of the top electrode 135 is between 10 nanometers and 500 nanometers, and the electrode contact 119 is disposed in a region of the piezoelectric thin film 112 where the top electrode 135 is not disposed.
In this embodiment, the top electrode 135 may be made of a molybdenum, aluminum, ruthenium, tungsten, or titanium metal material, or a combination thereof, or may be made of a conductive material such as graphene.
In a specific embodiment, the electrode contact 119 includes a first electrode contact, a second electrode contact, and a third electrode contact, wherein the first electrode contact and the third electrode contact are connected to the gate electrode 126 and the drain electrode 127 through the first electrode interconnection hole 115, respectively, and the second electrode contact is connected to the top electrode 135.
The piezoelectric film 112, bragg reflector layer, first passivation layer 118, metal electrode 113, top electrode 135, and electrode contact 119 constitute a filter 110. The filter 110 is connected to the electronic device 120 by vias 130 to form a monolithically integrated radio frequency device.
In the embodiment, the formed radio frequency device is a Film Bulk Acoustic Resonator (FBAR), and the film bulk acoustic resonator technology is a radio frequency device with more excellent performance, which appears along with the improvement of the technological level of the processing technology and the rapid development of the modern wireless communication technology in recent years. The surface acoustic wave resonator has the advantages of extremely high quality factor Q value (more than 1000) and being capable of being integrated on an IC chip, and can be compatible with a Complementary Metal Oxide Semiconductor (CMOS) process, thereby effectively avoiding the defect that the surface acoustic wave resonator and the dielectric resonator can not be compatible with the CMOS process.
In the present embodiment, the monolithically integrated devices on the same first substrate 121 are separated by the second dicing streets 140.
In one embodiment, the bragg reflector on the second substrate 111 is bonded to the passivation layer 129 on the first substrate 121, and after removing the second substrate 111, the source 125 of the transistor on the first substrate 121 is connected to the metal electrode 113 on the piezoelectric film 112, and the drain 127 of the transistor is connected to one of the electrode contacts 119 on the piezoelectric film 112.
Has the advantages that: according to the invention, the electronic devices such as the power amplifier, the noise amplifier and the switch are prepared on the first substrate, the corresponding filter is prepared on the second substrate, the second substrate is inversely bonded on the first substrate, and the electronic device on the first substrate is bonded and connected with the filter on the second substrate, so that a plurality of electronic devices of different types on the radio frequency front-end module can be integrated in the same chip, the problem of additional circuit design is avoided, the electrical connection loss is reduced, the assembly complexity is reduced, and the size and the cost of the radio frequency front-end module are reduced.
Based on the same inventive concept, the invention further provides a monolithically integrated radio frequency device, wherein the monolithically integrated radio frequency device is obtained by the monolithically integrated radio frequency device manufacturing method according to the above embodiment, and details are not repeated herein.
Based on the same inventive concept, the present invention further provides an integrated circuit system, please refer to fig. 15, fig. 15 is a schematic structural diagram of an embodiment of the integrated circuit system of the present invention, the integrated circuit system includes an amplifier, a duplexer, a filter, and a transmit-receive switch, wherein the duplexer is placed in the same block and is denoted by reference numeral 143 in the drawing, the transmit-receive switch is denoted by TX/RX switch 144, the amplifier includes at least one of a power amplifier and a low noise amplifier, the power amplifier is denoted by PA142, and the low noise amplifier is denoted by LNA 141.
In this embodiment, the duplexer and the filter are coupled to the amplifier and the transceiver switch, and at least two of the amplifier, the duplexer, the filter and the transceiver switch are disposed on the monolithically integrated rf device as described above, which is not described in detail herein.
In this embodiment, one end of the power amplifier is connected to the transceiver, the other end is connected to the duplexer and the filter, and the other end of the transmit/receive switch, which is not connected to the duplexer and the filter, is connected to the antenna.
In this embodiment, one end of the power amplifier is further connected to the power management system.
In the embodiments provided in the present invention, it should be understood that the disclosed system, apparatus and method may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, the modules or partitions may be merely logical partitions, and may be implemented in other ways, e.g., multiple modules or components may be combined or integrated into another system, or some features may be omitted, or not implemented. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be through some interfaces, devices or indirect coupling or communication connection, and may be in an electrical, mechanical or other form.
The components described as separate parts may or may not be physically separate, and the components shown may or may not be physical, that is, may be located in one place, or may be distributed on a plurality of networks. Some or all of them can be selected according to actual needs to achieve the purpose of the embodiment.
The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention is not limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are within the protection scope of the present invention.
Claims (10)
1. A method for preparing a monolithically integrated radio frequency device, wherein the radio frequency device is used for a radio frequency front end module, the method comprising:
s1: generating an epitaxial layer on a first substrate, wherein the epitaxial layer comprises a first buffer layer, a second single crystal layer and a third single crystal layer which are sequentially stacked;
s2: processing the epitaxial layer into at least one electronic device, and forming a passivation layer with at least one through hole on one side of the electronic device far away from the first base layer, wherein the electronic device comprises at least one of a power amplifier, a noise amplifier and a switch;
s3: sequentially forming a piezoelectric film, a metal electrode and a Bragg reflection layer on a second substrate, and forming an electrode interconnection hole penetrating through the Bragg reflection layer;
s4: and bonding and connecting the Bragg reflection layer with the passivation layer to electrically connect the electrode interconnection hole and the through hole, removing the second substrate, sequentially forming a top electrode and an electrode contact point on one side of the piezoelectric film, which is far away from the metal electrode, and connecting the top electrode and the electrode contact point with the electronic device through the electrode interconnection hole.
2. The method of claim 1, wherein the number of the through holes is three, and the through holes are respectively connected to a source, a drain, and a gate of the electronic device.
3. The method of claim 2, wherein the number of the electrode interconnection holes is three, and the objects through which each electrode interconnection hole passes are not identical, and are respectively opposite to and electrically connected to different ones of the through holes.
4. The method of claim 3 wherein said top electrode partially covers a side of said piezoelectric film remote from said metal electrodes and is connected to said gate electrode through one of said electrode interconnect holes.
5. The method for manufacturing a monolithically integrated radio frequency device according to claim 3, wherein the electrode contact is disposed in a region of the piezoelectric film away from the metal electrode where the top electrode is not disposed, and includes a first electrode contact, a second electrode contact, and a third electrode contact, wherein the first electrode contact and the third electrode contact are connected to the gate electrode and the drain electrode through the electrode interconnection hole, respectively, and the second electrode contact is connected to the top electrode.
6. The method of claim 1, wherein the metal electrode partially covers the piezoelectric film, the bragg reflector covers the metal electrode, and a portion of the piezoelectric film on a side where the metal electrode is disposed is not covered by the metal electrode.
7. The method of claim 1, wherein the bragg reflector layer comprises a first material layer and a second material layer stacked alternately, the first material layer and the second material layer are at least two layers in the same number, and the acoustic impedance of the first material layer is different from that of the second material layer.
8. The method for fabricating a monolithically integrated rf device as claimed in claim 1, wherein a first passivation layer is further disposed on a side of the bragg reflector layer away from the piezoelectric film, the first passivation layer is disposed in a recessed region of the bragg reflector layer, and the bragg reflector layer is planarized by the first passivation layer.
9. A monolithically integrated radio frequency device, characterized in that said monolithic integration is obtained by a monolithically integrated radio frequency device manufacturing method according to any of claims 1-8.
10. An integrated circuit system, comprising an amplifier, a duplexer, a filter, and a transmit/receive switch, the duplexer, the filter, and the amplifier and the transmit/receive switch coupled together, the amplifier comprising at least one of a power amplifier and a low noise amplifier, at least two of the amplifier, the duplexer, the filter, and the transmit/receive switch being disposed in the monolithically integrated rf device of claim 9.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111541436A (en) * | 2020-04-26 | 2020-08-14 | 深圳市信维通信股份有限公司 | Forming method of filtering device |
| CN113078893A (en) * | 2021-03-22 | 2021-07-06 | 电子科技大学 | Monolithic integrated broadband switch filter bank and preparation method thereof |
| CN113381782A (en) * | 2021-05-07 | 2021-09-10 | 清华大学 | Radio frequency front-end module, method and device for preparing antenna and filter |
| CN115602684A (en) * | 2022-08-12 | 2023-01-13 | 东科半导体（安徽）股份有限公司（Cn） | Integrated structure and preparation method thereof |
| US11955950B2 (en) | 2020-04-26 | 2024-04-09 | Shenzhen Sunway Communication Co., Ltd. | Formation method of filter device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111541436A (en) * | 2020-04-26 | 2020-08-14 | 深圳市信维通信股份有限公司 | Forming method of filtering device |
| WO2021217748A1 (en) * | 2020-04-26 | 2021-11-04 | 深圳市信维通信股份有限公司 | Method for forming filtering device |
| US11955950B2 (en) | 2020-04-26 | 2024-04-09 | Shenzhen Sunway Communication Co., Ltd. | Formation method of filter device |
| CN113078893A (en) * | 2021-03-22 | 2021-07-06 | 电子科技大学 | Monolithic integrated broadband switch filter bank and preparation method thereof |
| CN113381782A (en) * | 2021-05-07 | 2021-09-10 | 清华大学 | Radio frequency front-end module, method and device for preparing antenna and filter |
| CN115602684A (en) * | 2022-08-12 | 2023-01-13 | 东科半导体（安徽）股份有限公司（Cn） | Integrated structure and preparation method thereof |
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