CN117348155A - Silicon optical chip capable of reducing coupling loss - Google Patents
Silicon optical chip capable of reducing coupling loss Download PDFInfo
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- CN117348155A CN117348155A CN202311313483.6A CN202311313483A CN117348155A CN 117348155 A CN117348155 A CN 117348155A CN 202311313483 A CN202311313483 A CN 202311313483A CN 117348155 A CN117348155 A CN 117348155A
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- silicon optical
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- 230000003287 optical effect Effects 0.000 title claims abstract description 134
- 230000008878 coupling Effects 0.000 title claims abstract description 122
- 238000010168 coupling process Methods 0.000 title claims abstract description 122
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 122
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 110
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 110
- 239000010703 silicon Substances 0.000 title claims abstract description 110
- 239000013307 optical fiber Substances 0.000 claims abstract description 71
- 230000009477 glass transition Effects 0.000 claims abstract description 43
- 239000012792 core layer Substances 0.000 claims abstract description 42
- 239000000835 fiber Substances 0.000 claims abstract description 5
- 230000007423 decrease Effects 0.000 claims abstract description 4
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000012788 optical film Substances 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 abstract description 3
- 230000006872 improvement Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 238000005253 cladding Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/27—Optical coupling means with polarisation selective and adjusting means
- G02B6/2753—Optical coupling means with polarisation selective and adjusting means characterised by their function or use, i.e. of the complete device
- G02B6/2793—Controlling polarisation dependent loss, e.g. polarisation insensitivity, reducing the change in polarisation degree of the output light even if the input polarisation state fluctuates
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a silicon optical chip capable of reducing coupling loss, which comprises a silicon optical chip body, wherein a plurality of high-speed adjustable optical attenuators are integrated on the silicon optical chip body; the high-speed tunable optical attenuator further comprises a glass transition waveguide, wherein the core layer of the glass transition waveguide comprises an optical fiber coupling end for coupling with the optical fiber core layer and a chip coupling end for coupling with the silicon optical waveguide of the high-speed tunable optical attenuator; the cross-sectional area of the fiber coupling end to the chip coupling end decreases. The silicon optical chip with the structure utilizes the large end (optical fiber coupling end) of the glass transition waveguide with the decreasing cross section area to be connected with the optical fiber, and the small end (chip coupling end) of the glass transition waveguide to be connected with the silicon optical waveguide, so that the silicon optical chip is used for bridging the optical fiber and the silicon optical waveguide, the size difference of the connecting points of the optical fiber and the silicon optical waveguide is eliminated, and the coupling loss caused by the size difference is avoided.
Description
Technical Field
The invention relates to a silicon optical chip, in particular to a silicon optical chip capable of reducing coupling loss with optical fibers
Background
Silicon-based optoelectronic chips can be fabricated using integrated circuit technology to achieve high integration and mass production. The method has the advantages of small area, light weight, low power consumption and the like, can be used for manufacturing functional devices such as an electro-optical modulator, a photoelectric detector, an adjustable optical attenuator, an optical switch, an optical filter and the like, and is suitable for the fields of data communication, transmission, laser radar ranging, biochemical sensing and the like. With the continuous development of technology, the performance and application fields of the silicon optical chip are continuously expanded, and the silicon optical chip plays an increasingly important role in the modern communication field.
Silicon optical chips need to be coupled to optical fibers when in use. However, because of the large size difference, there is a large coupling loss during coupling, thereby reducing the performance of the silicon optical chip.
Disclosure of Invention
In view of the above, the present invention provides a silicon optical chip capable of reducing coupling loss due to a size difference between an optical fiber and a silicon optical waveguide.
In order to solve the technical problems, the technical scheme of the invention is that the silicon optical chip for reducing coupling loss is adopted and comprises a silicon optical chip body, wherein a plurality of high-speed adjustable optical attenuators are integrated on the silicon optical chip body; the high-speed tunable optical attenuator further comprises a glass transition waveguide, wherein the core layer of the glass transition waveguide comprises an optical fiber coupling end for coupling with the optical fiber core layer and a chip coupling end for coupling with the silicon optical waveguide of the high-speed tunable optical attenuator; the cross-sectional area of the fiber coupling end to the chip coupling end decreases.
As an improvement, the thickness of the coupling end of the chip is 1-5 mu m, and the thickness of the coupling end of the optical fiber is 8-12 mu m; the thickness of the silicon optical waveguide is 1-5 mu m, and the diameter of the optical fiber core layer is 8-12 mu m.
As a further improvement, the glass transition waveguide core layer and the optical fiber core layer are not on the same plane after the optical fiber coupling end is coupled with the optical fiber core layer; and the glass transition waveguide core layer and the silicon optical waveguide are not on the same plane after the chip coupling end is coupled with the silicon optical waveguide.
As another further improvement, the optical fiber coupling end, the end face used for coupling on the optical fiber, the chip coupling end and the end face used for coupling on the silicon optical chip body are all provided with inclined planes of 0-40 degrees; and the inclined planes of the end faces of the optical fiber coupling end and the optical fiber for coupling are consistent in inclined direction, and the inclined planes of the end faces of the chip coupling end and the silicon optical chip body for coupling are consistent in inclined direction.
As an improvement, the optical fiber coupling end, the end face used for coupling on the optical fiber, the chip coupling end and the end face used for coupling on the silicon optical chip body are inclined in the vertical direction or/and inclined in the left-right direction.
As an improvement, the end face of the silicon optical chip body for coupling is plated with an optical film.
As an improvement, metal electrodes are arranged on two sides of the silicon optical waveguide of the high-speed adjustable optical attenuator, and a carrier injection region is arranged below the metal electrodes.
As an improvement, the distance between the carrier injection region and the silicon optical waveguide is 0.1-10 μm.
As an improvement, both ends of the silicon optical waveguide are connected with glass transition waveguides.
As an improvement, two adjacent high-speed adjustable optical attenuators are in a group, one end of the silicon optical waveguide of the two high-speed adjustable optical attenuators in the same group is connected with each other, and the other end of the silicon optical waveguide is connected with the glass transition waveguide.
The invention has the advantages that:
the silicon optical chip with the structure utilizes the large end (optical fiber coupling end) of the glass transition waveguide with the decreasing cross section area to be connected with the optical fiber, and the small end (chip coupling end) of the glass transition waveguide to be connected with the silicon optical waveguide, so that the silicon optical chip is used for bridging the optical fiber and the silicon optical waveguide, the size difference of the connecting points of the optical fiber and the silicon optical waveguide is eliminated, and the coupling loss caused by the size difference is avoided.
In the invention, the glass transition waveguide core layer and the optical fiber core layer are not on the same plane after the optical fiber coupling end is coupled with the optical fiber core layer; the glass transition waveguide core layer and the silicon optical waveguide are not on the same plane after the chip coupling end is coupled with the silicon optical waveguide, a certain included angle is formed between the glass transition waveguide core layer and the optical fiber core layer, and between the glass transition waveguide core layer and the silicon optical waveguide, so that optical refractive index mismatch between the glass transition waveguide core layer and the silicon optical waveguide can be reduced, and light transmittance is increased.
In addition, the thickness of the silicon optical waveguide is increased to 1-5 μm, and the purpose of the invention is to be capable of adapting to the chip coupling end of the glass transition waveguide. In addition, after the thickness is achieved, the size mismatch of the silicon optical waveguide in the vertical direction and the horizontal direction can be reduced, the polarization state sensitivity degree of the waveguide to optical signals is reduced, and the functional device insensitive to optical polarization is easy to realize.
Drawings
Fig. 1 is a top view of example 1.
Fig. 2 is a cross-sectional view of a silicon photonics chip body.
Fig. 3 is a side view of the coupling between the glass transition waveguide and the silicon photonics chip body of example 1.
Fig. 4 is a top view of the glass transition waveguide and optical fiber coupling out of example 1.
Fig. 5 is a top view of example 2.
The marks in the figure: 1 silicon optical chip body, 2 glass transition waveguide, 3 optical fiber, 4 optical film, 5 curing glue, 11 silicon optical waveguide, 12 metal electrode, 13 carrier injection region, 21 core layer, 22 cladding layer, 31 core layer, 32 cladding layer, 101 silicon substrate, 102 silicon dioxide layer I, 103 silicon dioxide layer II.
Detailed Description
In order to make the technical scheme of the present invention better understood by those skilled in the art, the present invention will be further described in detail with reference to the following specific embodiments.
Example 1
As shown in fig. 1, the invention provides a silicon optical chip with less coupling loss, which comprises a silicon optical chip body 1, wherein a plurality of high-speed adjustable optical attenuators are integrated on the silicon optical chip body 1; the optical fiber comprises a silicon optical waveguide 11, a core layer 21 of the glass transition waveguide 2 comprises an optical fiber coupling end for coupling with the core layer 31 of the optical fiber 3 and a chip coupling end for coupling with the silicon optical waveguide 11 of the high-speed adjustable optical attenuator; the cross-sectional area of the fiber coupling end to the chip coupling end decreases.
The principle of the invention is that the glass transition waveguide 2 is used as the bridge between the optical fiber 3 and the silicon optical chip body 1 by the characteristics that the two ends of the glass transition waveguide 2 can be inconsistent in size and extremely low in optical attenuation, so that the size difference between the two is reduced or eliminated, and the coupling attenuation caused by the size mismatch is avoided.
The cross-section of the waveguide on the market is generally elliptical, circular or rectangular, so it is envisioned that the decreasing cross-sectional area described in the present invention means an equal ratio reduction while maintaining the same shape.
In this embodiment, the thickness of the coupling end of the chip is 1-5 μm, and the thickness of the coupling end of the optical fiber is 8-12 μm; the thickness of the silicon optical waveguide 11 is 1 to 5 μm, and the thickness of the optical fiber core layer 31 is 8 to 12 μm. The specific dimensions of the chip coupling end and the optical fiber coupling end need to be adaptively adjusted according to the dimensions of the chip and the optical fiber to which they are coupled.
The thickness of the conventional silicon optical waveguide in the market is generally 220nm or 400-500 nm, and the minimum thickness of the glass transition waveguide 2 is about 1-5 μm due to the material property. Therefore, in order to cooperate with the glass transition waveguide 2, the thickness of the silicon optical waveguide 11, that is, the dimension H marked in fig. 2, is thickened to 1-5 μm in the present invention, so that not only can the small end of the glass transition waveguide 2 be matched, but also a functional device insensitive to light polarization can be realized more easily after the silicon optical waveguide 11 is thickened.
In addition, it is envisioned that for a "thickness" as described herein is the diameter of the waveguide cross-section for a circular waveguide and the side length of the waveguide cross-section for a rectangular waveguide.
In this embodiment, the core layer 21 of the glass transition waveguide 2 and the core layer 31 of the optical fiber 3 are not on the same plane after the optical fiber coupling end is coupled with the core layer 31 of the optical fiber; the core layer 21 of the glass transition waveguide 2 and the silicon optical waveguide 11 are not on the same plane after the chip coupling end is coupled with the silicon optical waveguide 11. By "out of plane" is meant that the core layer 21 of the glass transition waveguide 2 and the core layer 31 of the optical fiber 3 or the core layer 21 of the glass transition waveguide 2 and the end of the silicon optical waveguide 11 are connected together and form an angle, which aims to reduce the optical refractive index profile between the two by reducing the angle and increase the light transmittance, thereby reducing the loss of light.
In order to achieve the purpose of 'not on a plane', the optical fiber coupling end, the end face for coupling on the optical fiber 3, the chip coupling end and the end face for coupling on the silicon optical chip body 1 are all provided with inclined planes of 0-40 degrees; and the inclined planes of the end faces used for coupling on the optical fiber coupling end and the optical fiber 3 are consistent, and the inclined planes of the end faces used for coupling on the chip coupling end and the silicon optical chip body 1 are consistent. Of course, in order to ensure that the coupling has an optimal effect, the angles of the end faces of the two coupled sides may be equal or unequal. As shown in FIG. 3, if the inclination angle θ of the chip coupling end is 2 15 DEG, then the inclination angle theta of the end face of the silicon photo chip body 1 1 And may be any number of degrees from 0 to 40 degrees. Inclination angle theta of optical fiber coupling end 3 And the inclination angle θ of the end face for coupling on the optical fiber 3 4 And the same is true.
The term "the same direction of inclination" as used above means that the inclined plane is inclined in the vertical direction or in the horizontal direction for convenience of arrangement when the inclined plane is provided. When one end face for coupling is inclined in the up-down direction, the other end face should be inclined in the up-down direction as well. As shown in fig. 3 and 4, in the present embodiment, the end faces of the optical fiber coupling end and the optical fiber 3 for coupling are selected to be inclined in the left-right direction, while the end faces of the chip coupling end and the silicon optical chip body 1 for coupling are selected to be inclined in the up-down direction. Of course, the optical fiber coupling end and the end face for coupling on the optical fiber 3 may be inclined in the vertical direction, and the chip coupling end and the end face for coupling on the silicon optical chip body 1 may be inclined in the horizontal direction. Or the two groups of coupling ends can be both inclined in the same way.
To further improve the light transmittance, the end face of the silicon optical waveguide 11 is coated with an optical film 4. When the coupling is carried out, the core layer 21 at the coupling end of the chip of the glass transition waveguide 2 is aligned with the silicon optical waveguide 11 and then bonded together by the curing adhesive 5. The connection mode between the optical fiber coupling end of the glass transition waveguide 2 and the optical fiber 3 is the same, and no description is repeated.
In the invention, a silicon optical chip body 1 comprises a silicon substrate 101, a silicon dioxide layer I102, a silicon optical waveguide 11 and a silicon dioxide layer II103 are deposited on the silicon substrate 101 from bottom to top, and a plurality of high-speed adjustable optical attenuators are integrated on the silicon optical chip body 1 to form a high-speed adjustable optical attenuator array. Each high-speed optical attenuator is composed of a silicon optical waveguide 11 and metal electrodes 12 disposed on both sides of the silicon optical waveguide, and a carrier injection region 13 is disposed below the metal electrodes 12. The distance G between the carrier injection region 13 and the silicon optical waveguide 11 is 0.1 to 10 μm. The glass transition waveguide 2 comprises a core layer 21, said core layer 21 being surrounded by a cladding layer 22. While the chip coupling end and the fiber coupling end actually refer to the two ends of the core layer. Likewise, the optical fiber 3 also includes a core layer 31 and a cladding layer 32 surrounding the core layer 31.
In this embodiment, each silicon optical waveguide 11 is used as a channel, and two ends of each silicon optical waveguide are connected with a glass transition waveguide 2, and the glass transition waveguides 2 are connected with the optical fibers 3, so that the input and output are respectively arranged at two sides of the silicon optical chip body 1.
Example 2
As shown in fig. 5, unlike embodiment 1, in this embodiment, two adjacent high-speed tunable optical attenuators are grouped together, and the silicon optical waveguides 11 of the two high-speed tunable optical attenuators of the same group are connected to each other at one end and connected to the glass transition waveguide 2 at the other end, so that the input and output are on the same side of the silicon optical chip body 1.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that the above-mentioned preferred embodiment should not be construed as limiting the invention, and the scope of the invention should be defined by the appended claims. It will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the spirit and scope of the invention, and such modifications and adaptations are intended to be comprehended within the scope of the invention.
Claims (10)
1. A silicon optical chip for reducing coupling loss, characterized by: the high-speed adjustable optical attenuator comprises a silicon optical chip body, wherein a plurality of high-speed adjustable optical attenuators are integrated on the silicon optical chip body; the high-speed tunable optical attenuator further comprises a glass transition waveguide, wherein the core layer of the glass transition waveguide comprises an optical fiber coupling end for coupling with the optical fiber core layer and a chip coupling end for coupling with the silicon optical waveguide of the high-speed tunable optical attenuator; the cross-sectional area of the fiber coupling end to the chip coupling end decreases.
2. The silicon optical chip for reducing coupling loss according to claim 1, wherein: the thickness of the chip coupling end is 1-5 mu m, and the thickness of the optical fiber coupling end is 8-12 mu m; the thickness of the silicon optical waveguide is 1-5 mu m, and the diameter of the optical fiber core layer is 8-12 mu m.
3. The silicon optical chip for reducing coupling loss according to claim 1, wherein: the glass transition waveguide core layer and the optical fiber core layer are not on the same plane after the optical fiber coupling end is coupled with the optical fiber core layer; and the glass transition waveguide core layer and the silicon optical waveguide are not on the same plane after the chip coupling end is coupled with the silicon optical waveguide.
4. A silicon optical chip with reduced coupling loss as defined in claim 3, wherein: the optical fiber coupling end, the end face used for coupling on the optical fiber, the chip coupling end and the end face used for coupling on the silicon optical chip body are all provided with inclined planes of 0-40 degrees; and the inclined planes of the end faces of the optical fiber coupling end and the optical fiber for coupling are consistent in inclined direction, and the inclined planes of the end faces of the chip coupling end and the silicon optical chip body for coupling are consistent in inclined direction.
5. The silicon optical chip for reducing coupling loss as defined in claim 4, wherein: the optical fiber coupling end, the end face used for coupling on the optical fiber, the chip coupling end and the end face used for coupling on the silicon optical chip body are inclined in the vertical direction or/and inclined in the left-right direction.
6. A silicon optical chip with reduced coupling loss as defined in claim 3, wherein: the end face of the silicon optical chip body for coupling is plated with an optical film.
7. The silicon optical chip for reducing coupling loss according to claim 1, wherein: metal electrodes are arranged on two sides of the silicon optical waveguide of the high-speed adjustable optical attenuator, and a carrier injection region is arranged below the metal electrodes.
8. The silicon optical chip for reducing coupling loss as defined in claim 7, wherein: the distance between the carrier injection region and the silicon optical waveguide is 0.1-10 mu m.
9. The silicon optical chip for reducing coupling loss according to claim 1, wherein: and both ends of the silicon optical waveguide are connected with glass transition waveguides.
10. The silicon optical chip for reducing coupling loss according to claim 1, wherein: the two adjacent high-speed adjustable optical attenuators are in a group, one end of the silicon optical waveguide of the two high-speed adjustable optical attenuators in the same group is connected with each other, and the other end of the silicon optical waveguide is connected with the glass transition waveguide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311313483.6A CN117348155A (en) | 2023-10-11 | 2023-10-11 | Silicon optical chip capable of reducing coupling loss |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311313483.6A CN117348155A (en) | 2023-10-11 | 2023-10-11 | Silicon optical chip capable of reducing coupling loss |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117348155A true CN117348155A (en) | 2024-01-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311313483.6A Pending CN117348155A (en) | 2023-10-11 | 2023-10-11 | Silicon optical chip capable of reducing coupling loss |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117348155A (en) |
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2023
- 2023-10-11 CN CN202311313483.6A patent/CN117348155A/en active Pending
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