CN117334558A

CN117334558A - Ultraviolet light source

Info

Publication number: CN117334558A
Application number: CN202310217578.1A
Authority: CN
Inventors: 戴军; 张人升; 曹志
Original assignee: Beijing Zhaoyu Investment Management Co ltd
Current assignee: Beijing Zhaoyu Investment Management Co ltd
Priority date: 2022-03-16
Filing date: 2023-03-08
Publication date: 2024-01-02

Abstract

The invention relates to an ultraviolet light source, which comprises a layered structure, wherein the layered structure comprises a plurality of electrode layers and at least one first cavity, the plurality of electrode layers comprise a first electrode layer and a second electrode layer, and the distance between the first electrode layer and the second electrode layer is 1 mu m-1 mm; the at least one first cavity is located between the first electrode layer and the second electrode layer. Compared with the existing ultraviolet light source, the ultraviolet light source has lower driving voltage.

Description

Ultraviolet light source

Technical Field

The present invention relates to ultraviolet light sources, and more particularly, to an ultraviolet light source with a low driving voltage.

Background

The ultraviolet light source has fluorescent effect, biological effect, photochemical effect and photoelectric effect, and is suitable for the fields of industry, agriculture, national defense, medical treatment and the like. The long-wave ultraviolet and medium-wave ultraviolet light source is widely applied to diazonium copying, electrostatic copying, printing plate making, fluorescent flaw detection in mechanical industry, photosynthesis, photocuring and photooxidation in chemical industry, agricultural fishing and insect attracting, inspection and identification in public security, treatment of certain skin diseases and the like. The short wave ultraviolet is mainly used for killing influenza viruses such as bacterial propagules, spores, mycobacteria, coronaviruses, fungi, rickettsiae, chlamydia and the like, and the surfaces of objects polluted by the viruses, water and air can be disinfected by adopting an ultraviolet disinfection desk lamp.

The existing ultraviolet light sources mainly comprise ultraviolet fluorescent lamps, ultraviolet mercury lamps, ultraviolet xenon lamps, ultraviolet metal halide lamps, ultraviolet LED light-emitting diodes and excimer ultraviolet light sources. The discharge forms of the excimer ultraviolet light source are various, including high-pressure glow discharge, dielectric barrier discharge, high-frequency capacitor discharge, microwave discharge, hollow cathode discharge and the like, which can effectively excite the excimer to emit light. Among them, dielectric barrier discharge is largely adopted in research and application due to its simple structure, economy and practicality. Because the driven excimer lamp has no inner electrode, corrosion and sputtering generated after the electrode contacts plasma are avoided, the excimer lamp is a potential long-life ultraviolet light source, and the shape and the size can be changed according to various requirements.

However, the discharge voltage of the conventional excimer lamp based on dielectric barrier discharge is generally high, reaching the level of several kV or even tens kV, and the radiation power consumption is large, and for large-scale irradiation application, the radiation efficiency still needs to be improved.

Disclosure of Invention

In view of the above, an embodiment of the present invention is to provide an ultraviolet light source for solving the problems of high driving voltage or low radiation efficiency of the existing ultraviolet light source.

In one aspect, an embodiment of the present invention provides an ultraviolet light source comprising a layered structure comprising:

a multi-layer electrode layer; and

at least one first cavity;

the multi-layer electrode layer comprises a first electrode layer and a second electrode layer, and the distance between the first electrode layer and the second electrode layer is 1 mu m-1 mm; the at least one first cavity is located between the first electrode layer and the second electrode layer.

According to an embodiment of the present invention, the layered structure includes a first support layer disposed between the first electrode layer and the second electrode layer, and at least one first hole is formed in the first support layer to form the at least one first cavity between the first electrode layer and the second electrode layer.

According to an embodiment of the present invention, the material of the first supporting layer is an insulating material.

According to an embodiment of the invention, the ultraviolet light source comprises at least one second cavity, which is in communication with the at least one first cavity.

According to an embodiment of the present invention, the height of the at least one second cavity is 10 μm to 3mm along the thickness direction of the layered structure; and/or the number of the groups of groups,

and the distance between the first cavity and the second cavity along the thickness direction of the layered structure is 10 mu m-1 mm.

According to an embodiment of the invention, the multi-layer electrode layer comprises a third electrode layer, the at least one second cavity being located between the second electrode layer and the third electrode layer.

According to an embodiment of the present invention, a first dielectric barrier layer is provided between the second electrode layer and the third electrode layer; and/or the number of the groups of groups,

the layered structure comprises a second supporting layer, wherein the second supporting layer is arranged between the second electrode layer and the third electrode layer, and at least one third through hole is formed in the second supporting layer so as to form at least one second cavity between the second electrode layer and the third electrode layer.

According to one embodiment of the invention, at least one second through hole is formed in the second electrode layer, at least one fourth through hole is formed in the first dielectric barrier layer, and the first cavity is communicated with the second cavity through the second through hole and the fourth through hole; and/or the number of the groups of groups,

the thicknesses of the first electrode layer, the second electrode layer and the third electrode layer are 10 nm-10 μm, and further 10 nm-1 μm.

According to an embodiment of the present invention, the layered structure includes a substrate, and the first electrode layer is disposed on the substrate.

According to one embodiment of the present invention, the ultraviolet light source is a flat panel plasma light source.

The ultraviolet light source according to an embodiment of the present invention has a lower driving voltage than the existing ultraviolet light source.

In the invention, the technical schemes can be mutually combined to realize more preferable combination schemes. Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and drawings.

Drawings

The drawings are only for purposes of illustrating particular embodiments and are not to be construed as limiting the invention.

Wherein:

FIG. 1 is a schematic view of an ultraviolet light source according to an embodiment of the present invention;

FIGS. 2 to 4 are schematic cross-sectional views of an ultraviolet light source according to an embodiment of the present invention;

FIG. 5 is a top view of a first support layer according to an embodiment of the invention;

FIG. 6 is a schematic perspective view of a first support layer according to an embodiment of the invention;

FIG. 7 is a schematic diagram of a structure of a second electrode layer according to an embodiment of the present invention;

FIG. 8 is a schematic diagram of a second support layer according to an embodiment of the invention;

FIG. 9 is a schematic structural diagram of a third electrode layer according to an embodiment of the present invention;

FIG. 10 is a schematic cross-sectional view of an ultraviolet light source according to another embodiment of the present invention;

FIG. 11A is a schematic cross-sectional view of an ultraviolet light source according to example 1 of the present invention;

FIG. 11B is a schematic cross-sectional view of an ultraviolet light source according to example 2 of the present invention.

The reference numerals are explained as follows:

10. a substrate; 21. a first electrode layer; 22. a second electrode layer; 23. a third electrode layer; 24. a fourth electrode layer; 31. a first cavity; 32. a second cavity; 41. a first dielectric barrier layer; 42. a second dielectric barrier layer; 51. a first support layer; 52. a second support layer; 60. and (3) a sealing layer.

Detailed Description

The following detailed description of preferred embodiments of the invention, which form a part hereof, and together with the description of the invention serve to explain the principles of the invention, are not intended to limit the scope of the invention.

Referring to fig. 1 to 10, an embodiment of the present invention provides an ultraviolet light source comprising a layered structure including a plurality of electrode layers and at least one first cavity 31; wherein the multi-layer electrode layer comprises a first electrode layer 21 and a second electrode layer 22, and the distance d between the first electrode layer 21 and the second electrode layer 22 is 1 mu m-1 mm; at least one first cavity 31 is located between the first electrode layer 21 and the second electrode layer 22.

In one embodiment, the distance d between the first electrode layer 21 and the second electrode layer 22 is 1 μm to 1mm, for example, 2 μm, 5 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 40 μm, 50 μm, 60 μm, 80 μm, 100 μm, 110 μm, 120 μm, 150 μm, 180 μm, 200 μm, 210 μm, 220 μm, 250 μm, 280 μm, 300 μm, 310 μm, 320 μm, 350 μm, 360 μm, 380 μm, 400 μm, 420 μm, 450 μm, 460 μm, 480 μm, 500 μm, 520 μm, 550 μm, 600 μm, 620 μm, 650 μm, 680 μm, 700 μm, 720 μm, 750 μm, 780 μm, 800 μm, 820 μm, 850 μm, 880 μm, 900 μm, 980 μm, 950 μm, in the thickness direction of the layered structure.

In one embodiment, the distance d between the first electrode layer 21 and the second electrode layer 22 in the thickness direction of the layered structure is 1 to 500 μm, more preferably 1 to 200 μm, still more preferably 1 to 100 μm, still more preferably 1 to 50 μm.

In one embodiment, the distance d between the first electrode layer 21 and the second electrode layer 22 in the thickness direction of the layered structure is 1 to 10 μm, and may further be 1 to 5 μm, for example, 2 μm, 3 μm, 4 μm, 6 μm, 7 μm, 8 μm, 9 μm.

The ultraviolet light source according to an embodiment of the present invention emits light by exciting a discharge gas, specifically, when in operation, a voltage is applied between electrodes by a power supply to form an electric field, and then the discharge gas is ionized and excited to form plasma, and then the plasma emits ultraviolet photons to emit light. In the uv light source according to an embodiment of the present invention, the discharge gas may be excited in the first cavity 31, and the distance between the first electrode layer 21 and the second electrode layer 22 is limited to, for example, 1 μm to 1mm, so that the discharge voltage applied between the first electrode layer 21 and the second electrode layer 22 can be reduced, so that the uv light source starting voltage is equal to or not much different from the corresponding control circuit voltage, thereby greatly degrading the cost of the power supply design. In addition, the reduced voltage compared to conventional coaxial excimer lamps reduces or even eliminates the safety risks associated with leakage of electromagnetic radiation from the starting circuit and ozone generation from the discharge due to high voltage.

In an embodiment, the number of the first cavities 31 may be one or more; the plurality of first cavities 31 may not communicate with each other.

In an embodiment, the first cavity 31 may be a cylindrical cavity, and the height of the first cavity 31 may be equal to the distance d between the first electrode layer 21 and the second electrode layer 22 along the thickness direction of the layered structure, i.e. the height of the first cavity 31 may be 1 μm to 1mm, such as 2 μm, 3 μm, 4 μm, 6 μm, 7 μm, 8 μm, 9 μm. The diameter of the first cavity 31 may be 3 μm to 5000 μm, for example 10 μm, 20 μm, 50 μm, 100 μm, 200 μm, 500 μm, 1000 μm, 2000 μm, 3000 μm, 4000 μm.

In one embodiment, the layered structure includes a first support layer 51, the first support layer 51 is disposed between the first electrode layer 21 and the second electrode layer 22, at least one first hole is formed in the first support layer 51, and at least one first cavity 31 is formed between the first electrode layer 21 and the second electrode layer 22 through the first hole; further, the axial direction of the first hole is the same as the thickness direction of the first support layer 51.

In an embodiment, the first hole formed on the first supporting layer 51 may be a through hole, for example, a first through hole; referring to fig. 5 and 6, the first support layer 51 may be a planar sheet or plate structure provided with one or more first through holes.

In an embodiment, the first hole formed on the first supporting layer 51 may be a blind hole, i.e. a hole that does not penetrate through the first supporting layer 51, in this case, the bottom (non-penetrating portion) of the blind hole of the first supporting layer 51 may serve as a dielectric barrier between the first electrode layer 21 and the second electrode layer 22, and the arrangement of the dielectric barrier may reduce the requirement on the high temperature resistance of the first electrode layer 21 and the second electrode layer 22.

In an embodiment, the material of the first supporting layer 51 may be an insulating material, such as silicon dioxide.

In one embodiment, the thickness of the first support layer 51 may be 1 μm to 1mm, for example, 2 μm, 5 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 40 μm, 50 μm, 60 μm, 80 μm, 100 μm, 110 μm, 120 μm, 150 μm, 180 μm, 200 μm, 210 μm, 220 μm, 250 μm, 280 μm, 300 μm, 310 μm, 320 μm, 350 μm, 360 μm, 380 μm, 400 μm, 420 μm, 450 μm, 460 μm, 480 μm, 500 μm, 520 μm, 550 μm, 600 μm, 620 μm, 650 μm, 680 μm, 700 μm, 720 μm, 750 μm, 780 μm, 800 μm, 820 μm, 850 μm, 880 μm, 900 μm, 920 μm, 950 μm, 980 μm.

In one embodiment, the discharge gas may be sealed in the first cavity 31 during the preparation of the uv light source, or the discharge gas may be introduced into the first cavity 31 after the preparation of the uv light source is completed; preferably, a gas inlet is formed on the ultraviolet light source, and the discharge gas is introduced into the first cavity 31 through the gas inlet after the ultraviolet light source is prepared, so that the packaging process can be simplified, the steps can be saved, the preparation speed can be improved, and the preparation cost can be saved.

Further, the ultraviolet light source according to an embodiment of the present invention further includes at least one second cavity 32, the at least one second cavity 32 is in communication with the at least one first cavity 31, and the second cavity 32 is disposed to facilitate a subsequent reaction after the discharge gas is excited. Specifically, during operation, the discharge gas in the first cavity 31 is first excited, and becomes plasma after being excited, and the plasma can enter the second cavity 32 from the first cavity 31 to continue the reaction, so that the light emitting area is further enlarged.

In one embodiment, the height of the at least one second cavity 32 is 10 μm to 3mm, e.g. 20 μm, 50 μm, 80 μm, 100 μm, 200 μm, 500 μm, 600 μm, 800 μm, 1mm, 2mm, in the thickness direction of the layered structure.

In one embodiment, the second cavity 32 may be one or more.

In an embodiment, the first cavities 31 are not communicated with each other, but are all communicated with the second cavity 32, and the discharge gas is rapidly excited in each first cavity 31 by communicating the first cavities 31 with each other through the second cavity 32.

In an embodiment, the first cavity 31 and the second cavity 32 may be located at two sides of the second electrode layer 22, respectively.

In one embodiment, at least one second through hole is formed in the second electrode layer 22, and the first cavity 31 is in communication with the second cavity 32 through the second through hole. Further, the number of the second through holes is the same as that of the first cavities 31, that is, each of the first cavities 31 communicates with the second cavity 32 through one of the second through holes.

In one embodiment, the distance between the first cavity 31 and the second cavity 32 which are communicated with each other along the thickness direction of the layered structure is 10 μm-1 mm, and the existence of the distance can further increase the activity space of the discharge gas; for example, the distance may be 11 μm, 15 μm, 20 μm, 50 μm, 80 μm, 100 μm, 150 μm, 200 μm, 500 μm, 600 μm, 800 μm; the distance between the first cavity 31 and the second cavity 32 is further 100 μm to 800 μm.

In an embodiment, referring to fig. 7, the second electrode layer 22 may be a planar thin layer or a thin plate structure with one or more second through holes.

In an embodiment, the multi-layered electrode layer further includes a third electrode layer 23, and the second cavity 32 may be located between the second electrode layer 22 and the third electrode layer 23.

In an embodiment, the layered structure includes a second support layer 52, the second support layer 52 is disposed between the second electrode layer 22 and the third electrode layer 23, and at least one third through hole is formed in the second support layer 52 to form at least one second cavity 32 between the second electrode layer 22 and the third electrode layer 23.

In one embodiment, as shown in fig. 8, the second supporting layer 52 is a frame, which is sandwiched between the second electrode layer 22 and the third electrode layer 23 to form a second cavity 32.

In one embodiment, the thickness of the second support layer 52 may be 10 μm to 3mm, for example, 20 μm, 50 μm, 80 μm, 100 μm, 200 μm, 500 μm, 600 μm, 800 μm, 1mm, 2mm.

In an embodiment, the layered structure includes at least one dielectric barrier layer for dielectric barrier discharge, and the dielectric barrier layer may be made of silicon dioxide. For example, a first dielectric barrier layer 41 may be disposed between the second electrode layer 22 and the third electrode layer 23.

In one embodiment, the first dielectric barrier 41 is disposed on the second electrode layer 22. At least one fourth through hole is formed in the first dielectric barrier 41, and the first cavity 31 may be communicated with the second cavity 32 through the third through hole and the fourth through hole.

In an embodiment, the shape of the first dielectric barrier 41 may be the same as the shape of the second electrode layer 22.

In an embodiment, referring to fig. 10, the multi-layer electrode layer further includes a fourth electrode layer 24, wherein the fourth electrode layer 24 is disposed between the second electrode layer 22 and the third electrode layer 23 along the thickness direction of the layered structure, further, the fourth electrode layer 24 is disposed between the second supporting layer 52 and the second electrode layer 22, further, a second dielectric barrier layer 42 is disposed on the fourth electrode layer 24, the fourth electrode layer 24 may have the same structure as the second electrode layer 22, and the second dielectric barrier layer 42 may have the same structure as the first dielectric barrier layer 41, that is, through holes are disposed on both the fourth electrode layer 24 and the second dielectric barrier layer 42 to enable the first cavity 31 to be communicated with the second cavity 32. Therefore, the arrangement of the fourth electrode layer 24 and the second dielectric barrier layer 42 can further increase the activity space of the discharge gas, and simultaneously plays a role in accelerating, so that the reaction is more compact, and the improvement of the light conversion efficiency is facilitated.

In an embodiment, a fifth electrode layer and a sixth electrode layer may be stacked between the second support layer 52 and the second electrode layer 22 in the manner of the fourth electrode layer 24.

In one embodiment, the layered structure includes a substrate 10, and a first electrode layer 21 is disposed on the substrate 10.

In one embodiment, the substrate 10 may be made of silicon, quartz glass, borosilicate glass or fused silica.

In an embodiment, the substrate 10, the first electrode layer 21, the third electrode layer 23, and the dielectric barrier layer may have a planar thin layer or a thin plate structure.

In one embodiment, the thickness of the substrate 10 may be 1mm to 3mm, for example 1.5mm, 2mm, 2.5mm.

In an embodiment, the thickness of each of the first electrode layer 21, the second electrode layer 22, the third electrode layer 23, and the fourth electrode layer 24 may be 10nm to 10 μm, and further 10nm to 1 μm, for example, 20nm, 50nm, 80nm, 100nm, 200nm, 500nm, 800nm, 900nm, 2 μm, 5 μm, 6 μm, 8 μm, in the thickness direction of the layered structure.

In one embodiment, the materials of the first electrode layer 21 and the second electrode layer 22 may be high temperature resistant materials such as aluminum and titanium nitride.

In one embodiment, the top electrode layer of the uv light source (i.e., the electrode layer farthest from the substrate 10), for example, the third electrode layer 23 may be a mesh electrode, a gear electrode or a transparent electrode, so as to facilitate light transmission; the material of the third electrode layer 23 may be, for example, carbon, metallic nickel, metallic chromium, nichrome, graphene, ITO, or zinc oxide.

In an embodiment, the third electrode layer 23 is a non-transparent electrode, such as metal, and a plurality of through holes are formed on the third electrode layer 23 to facilitate light transmission, and the shape of the through holes may be hexagonal, for example.

In one embodiment, the layered structure includes a sealing layer 60 to seal the first cavity 31 and the second cavity 32; further, the sealing layer 60 is made of a light-transmitting material so as to facilitate the transmission of ultraviolet light.

In one embodiment, the sealing layer 60 may be located between the second support layer 52 and the third electrode layer 23; further, the thickness of the sealing layer 60 may be 0.5mm to 2mm, for example 1mm, 1.5mm, in the thickness direction of the layered structure.

In an embodiment, the third electrode layer 23 may be located inside the sealing layer 60, for example, the third electrode layer 23 may be sandwiched between the sealing layer 60 and the second supporting layer 52.

In one embodiment, an ultraviolet filtering film is disposed on the layered structure (e.g., on the upper or lower portion of the third electrode layer 23) to allow ultraviolet light of a specific wavelength band to be transmitted from the light source.

In an embodiment, the material of the first support layer 51 and the second support layer 52 may be silicon dioxide.

In an embodiment, the thickness of the dielectric barrier layers, such as the first dielectric barrier layer 41 and the second dielectric barrier layer 42, may be 10 μm to 100 μm, such as 15 μm, 20 μm, 30 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, etc. along the thickness direction of the layered structure.

In one embodiment, the thickness direction of the layered structure is a direction perpendicular to the layered structure, more specifically, a direction perpendicular to the surface of the planar first electrode layer 21.

In an embodiment, the layers of the layered structure are disposed in parallel, for example, the first electrode layer 21 may be parallel to the second electrode layer 22, and/or the second electrode layer 22 may be parallel to the third electrode layer 23.

The ultraviolet light source of one embodiment of the invention is a flat plasma light source.

The ultraviolet light source of an embodiment of the invention further comprises a discharge gas, wherein the discharge gas can be one or more of inert gas, halogen simple substance and excimer gas; further, the inert gas may be helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe); the halogen simple substance can be fluorine gas, chlorine gas, bromine gas and iodine gas; the excimer gas may be NeF, arBr, arCl, krI, arF, krBr, krCl, krF, xeI, xeBr, xeCl, xeF.

In an embodiment, the discharge gas may be located in the first cavity 31, or in the first cavity 31 and the second cavity 32.

In one embodiment, the gas inlet of the discharge gas is disposed on the substrate 10, for example, a through hole may be disposed on the substrate 10, the through hole penetrates through the substrate 10 along the thickness direction of the substrate 10, the valve is disposed in the through hole, and a through hole connected to the through hole of the substrate 10 is disposed on the first electrode layer 21, so that the valve is in communication with the first cavity 31. Thus, the discharge gas can be injected into the ultraviolet light source through the valve, and different luminous gas mediums can be adjusted according to the requirement.

In operation, the ultraviolet light source according to an embodiment of the present invention may have a driving voltage of 5V to 5kV, for example, 10V, 20V, 50V, 100V, 200V, 500V, 1kV, 2kV, or the like, applied between the first electrode layer 21 and the second electrode layer 22.

An embodiment of the present invention provides a method for preparing an ultraviolet light source, including:

providing a substrate 10;

depositing a first electrode layer 21 on the substrate 10;

depositing a first support layer 51 on the first electrode layer 21;

forming a second electrode layer 22 on the first support layer 51 by deposition;

forming a first dielectric barrier layer 41 on the second electrode layer 22 by deposition;

etching the first support layer 51, the second electrode layer 22, and the first dielectric barrier layer 41 to form a plurality of corresponding first, second, and fourth through holes;

a frame-shaped second support layer 52 is provided on the first dielectric barrier layer 41; and

the third electrode layer 23 is formed on the second support layer 52.

In the preparation method of the invention, the deposition process and the etching process of each step can be conventional methods in the field.

The ultraviolet light source of the embodiment of the invention has lower driving voltage. Furthermore, compared with the starting voltage of a few kV to hundred kV of the traditional excimer lamp, the ultraviolet light source in one embodiment of the invention can realize the starting voltage below 1 kV.

The ultraviolet light source of the embodiment of the invention has higher radiation efficiency. Further, compared with the efficiency of less than 5% of the ultraviolet LED light source in the uvb\uvc frequency band, the efficiency of 20% can be achieved in the excimer spectral line in the uvb\uvc\vacuum UV etc frequency band.

The radiation efficiency of the ultraviolet light source according to an embodiment of the present invention is 3 to 23%, for example, 4%, 5%, 6%, 8%, 10%, 12%, 14%, 15%, 16%, 18%, 20%, 21%, 22%.

The driving voltage of the ultraviolet light source according to an embodiment of the present invention may be 10 to 12V.

The ultraviolet light source of one embodiment of the invention can realize 200mW/cm ² Even higher intensity ultraviolet power output can boost ultraviolet radiation intensity by at least three orders of magnitude compared to existing excimer light sources at the same input voltage.

According to the ultraviolet light source of the embodiment of the invention, discharge gas can be injected through the valve, so that different luminous gas media can be adjusted according to the needs.

The thickness of the flat ultraviolet light source in one embodiment of the invention can be kept within 1 cm, and the minimum thickness can reach 5mm, so that the miniaturized production of the ultraviolet light source can be realized.

The flat ultraviolet light source of the embodiment of the invention can be assembled and expanded like an LED display screen in an array manner, and can realize customized light sources with different areas.

The ultraviolet light source according to an embodiment of the present invention will be further described with reference to the accompanying drawings and examples.

Example 1

Referring to fig. 11A, an ultraviolet light source includes a layered structure including a substrate 10, a first electrode layer 21, a first support layer 51, a sealing layer 60, and a second electrode layer 22, which are sequentially stacked and arranged in parallel in a thickness direction of the layered structure, and the substrate 10, the first electrode layer 21, the first support layer 51, the sealing layer 60, and the second electrode layer 22 are each in a flat plate-like structure. 10000 first cavities 31 are formed between the first electrode layer 21 and the second electrode layer 22, 10000 first cavities 31 are not communicated with each other, the first cavities 31 are formed by 10000 circular first holes formed in the first supporting layer 51, the first holes are blind holes, and the bottoms of the blind holes cover the first electrode layer 21. The distance d between the first electrode layer 21 and the second electrode layer 22 is 1 μm.

Wherein, the substrate 10 is made of quartz glass and has a thickness of 2mm; the material of the first electrode layer 21 is aluminum, and the thickness is 10nm; the first supporting layer 51 is made of silicon dioxide, the thickness is 1 μm, the thickness of the bottom of the blind hole is 0.1 μm, and the diameter of the circular first cavity 31 is 10 μm; the second electrode layer 22 is made of aluminum and has a thickness of 1 μm.

Example 1-1

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 5 μm.

Examples 1 to 2

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 10 μm.

Examples 1 to 3

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 20 μm.

Examples 1 to 4

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 30 μm.

Examples 1 to 5

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 50 μm.

Examples 1 to 6

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 80 μm.

Examples 1 to 7

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 100 μm.

Examples 1 to 8

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 150 μm.

Examples 1 to 9

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 200 μm.

Examples 1 to 10

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 300 μm.

Examples 1 to 11

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 400 μm.

Examples 1 to 12

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 500 μm.

Examples 1 to 13

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 600 μm.

Examples 1 to 14

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 700 μm.

Examples 1 to 15

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 800 μm.

Examples 1 to 16

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 900 μm.

Examples 1 to 17

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 1mm.

Example 2

Referring to fig. 11B, the structure of the ultraviolet light source of the present embodiment is substantially the same as that of embodiment 1, except that: the second support layer 52 and a second cavity 32 are included, the second support layer 52 is a square frame, the material is silicon dioxide, and the thickness is 10 μm; the second support layer 52 is disposed on the second electrode layer 22, the second cavity 32 is formed in the second support layer 52, and the sealing layer 60 is disposed on the second support layer 52; the second cavity 32 is a square cavity with a side length of 10cm, and the height H of the second cavity 32 is 10 μm in the thickness direction of the layered structure.

The first cavities 31 and the second cavities 32 are respectively located at two sides of the second electrode layer 22, and a plurality of second through holes are formed in the second electrode layer 22, each second through hole corresponds to one first cavity 31, so that each first cavity 31 can be communicated with the second cavity 32 through one second through hole.

Example 2-1

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 2, except that: the thickness of the second support layer 52 is adjusted so that the height H of the second cavity 32 is 100 μm.

Example 2-2

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 2, except that: the thickness of the second support layer 52 is adjusted so that the height H of the second cavity 32 is 1mm.

Examples 2 to 3

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 2, except that: the thickness of the second support layer 52 is adjusted so that the height H of the second cavity 32 is 3mm.

Examples 2 to 4

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 2, except that: the thickness of the second support layer 52 is adjusted so that the height H of the second cavity 32 is 5mm.

Example 3

Referring to fig. 1 to 4 and 11B, the structure of the ultraviolet light source of the present embodiment is substantially the same as that of embodiment 2, except that: further comprising a third electrode layer 23 and a first dielectric barrier layer 41; the material of the second electrode layer 22 is titanium nitride, the third electrode layer 23 is a transparent electrode, and the thickness is 10nm.

Wherein the third electrode layer 23 and the first dielectric barrier layer 41 are both in a plate-like structure and are disposed parallel to the second electrode layer 22. The first dielectric barrier 41 is disposed on the surface of the second electrode layer 22 facing the second cavity 32; the material of the first dielectric barrier 41 is silicon dioxide, and the thickness is 9 μm. The second cavity 32 is located between the first dielectric barrier 41 and the third electrode layer 23. The distance L between the first cavity 31 and the second cavity 32 is 10 μm (i.e., the sum of the thicknesses of the second electrode layer 22 and the first dielectric barrier layer 41).

Example 3-1

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 3, except that: the distance L between the first cavity 31 and the second cavity 32 is made 100 μm by adjusting the thickness of the first dielectric barrier 41.

Example 4

Referring to fig. 10 and 11B, the structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 3, except that: the uv light source of this embodiment further includes a fourth electrode layer 24 and a second dielectric barrier layer 42, where the fourth electrode layer 24 and the second dielectric barrier layer 42 are stacked between the second support layer 52 and the first dielectric barrier layer 41, the second dielectric barrier layer 42 is adjacent to the second support layer 52, the fourth electrode layer 24 is adjacent to the first dielectric barrier layer 41, the material and thickness of the fourth electrode layer 24 are the same as those of the second electrode layer 22, and the material and thickness of the second dielectric barrier layer 42 are the same as those of the first dielectric barrier layer 41; and the distance L between the first cavity 31 and the second cavity 32 is 20 μm.

Example 4-1

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 4, except that: the distance L between the first cavity 31 and the second cavity 32 is set to 100 μm by adjusting the thickness of the first dielectric barrier 41 and the second dielectric barrier 42.

Example 4-2

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 4, except that: the distance L between the first cavity 31 and the second cavity 32 is made 200 μm by adjusting the thickness of the first dielectric barrier 41 and the second dielectric barrier 42.

Example 5

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 1, except that: the first support layer 51 is a square frame, i.e. the first cavity 31 is a square cavity with a side length of 5 μm.

Example 6

The structure of the ultraviolet light source of this embodiment is substantially the same as that of embodiment 3, except that: the first support layer 51 is a square frame, i.e. the first cavity 31 is a square cavity with a side length of 5 μm.

Comparative example 1

The structure of the ultraviolet light source of this example is substantially the same as that of example 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 1.2mm.

Comparative example 2

The structure of the ultraviolet light source of this example is substantially the same as that of example 1, except that: the thickness of the first support layer 51 was adjusted so that the distance d between the first electrode layer 21 and the second electrode layer 22 was 1.5mm.

The performance test data for the ultraviolet light sources of the above examples, comparative examples obtained by the integrating sphere test method are listed in table 1.

TABLE 1

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From the examples, comparative examples and the results of Table 1, the driving voltage of the UV light source according to the examples of the present invention can be as low as 10V.

Further, in examples 1 to 17 and comparative examples 1 and 2, the smaller the distance d between the first electrode layer 21 and the second electrode layer 22, the greater the radiation efficiency of the ultraviolet light source, under otherwise identical conditions. Thus, d is preferably 1 μm to 1mm, more preferably 1 μm to 150 μm, still more preferably 1 μm to 50 μm, still more preferably 1 μm to 10 μm.

The uv light source of examples 2-4 has a second cavity 32 added to the uv light source of example 1, and the radiation efficiency of examples 2-4 is lower than that of example 1; and the greater the height H of the second cavity 32, the more the radiation efficiency is reduced compared to embodiment 1, indicating that the addition of the second cavity 32 alone is rather detrimental to the improvement of the radiation efficiency of the uv light source.

The ultraviolet light source of examples 3, 3-1 adds the third electrode layer 23 and the first dielectric barrier layer 41 compared to the ultraviolet light source of example 2; from the results in table 1, it can be seen that the radiation efficiency (21.2%) of the ultraviolet light source of example 3 is much higher than that of examples 1 (11.2%) and 2 (11%). In this way, in addition to the ultraviolet light source of example 1, the radiation efficiency can be greatly improved by further combining the second cavity 32 and the third electrode layer 23. Further, as is clear from the comparison of the radiation efficiencies of examples 3 and 3-1, the smaller the distance L between the first cavity 31 and the second cavity 32 is, the more advantageous the radiation efficiency is.

The uv light sources of examples 4 to 4-2 add the fourth electrode layer 24 and the second dielectric barrier layer 42 as compared to the uv light source of example 3. The D, H, L value of example 3-1 was the same as example 4-1, but the radiant efficiency (16.3%) was lower than that of example 4-1 (21.0%), indicating that the radiant efficiency of the uv light source was further improved by the addition of the fourth electrode layer 24 and the second dielectric barrier layer 42. As described above, the smaller the distance L between the first cavity 31 and the second cavity 32, the more advantageous the radiation efficiency is. But the radiant efficiency (20.4%) of example 4-2, which had a greater value of L, was still higher than that of example 3-1 (16.3%), indicating that the effect of the fourth electrode layer 24 and the second dielectric barrier layer 42 on the radiant efficiency was greater than that of the L value.

The uv light sources of examples 5, 6 have square first cavities 31, as compared to the uv light source of example 1 having circular first cavities 31; the local radiation is not uniform and stable due to the fringe field effect of the square cavity, so that the radiation efficiency of examples 5 and 6 is reduced compared with example 1. Thus, the shape of the first cavity 31 is preferably circular.

The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention.

Claims

1. An ultraviolet light source comprising a layered structure, the layered structure comprising:

a multi-layer electrode layer; and

at least one first cavity;

2. The ultraviolet light source of claim 1, wherein the layered structure comprises a first support layer disposed between the first electrode layer and the second electrode layer, at least one first aperture being opened in the first support layer to form the at least one first cavity between the first electrode layer and the second electrode layer.

3. The uv light source of claim 2, wherein the first support layer is an insulating material.

4. The ultraviolet light source of claim 1, comprising at least one second cavity in communication with the at least one first cavity.

5. The uv light source of claim 4, wherein the at least one second cavity has a height of 10 μm to 3mm in the thickness direction of the layered structure; and/or the number of the groups of groups,

6. The ultraviolet light source of claim 4, wherein the multi-layer electrode layer comprises a third electrode layer, the at least one second cavity being located between the second electrode layer and the third electrode layer.

7. The uv light source of claim 6, wherein a first dielectric barrier layer is disposed between the second electrode layer and the third electrode layer; and/or the number of the groups of groups,

8. The ultraviolet light source of claim 7, wherein at least one second through hole is formed in the second electrode layer, at least one fourth through hole is formed in the first dielectric barrier layer, and the first cavity is communicated with the second cavity through the second through hole and the fourth through hole; and/or the number of the groups of groups,

9. The ultraviolet light source of claim 1, wherein the layered structure comprises a substrate, the first electrode layer being disposed on the substrate; and/or the number of the groups of groups,

the distance between the first electrode layer and the second electrode layer is 1-150 mu m.

10. The uv light source of claim 1, which is a flat panel plasma light source; and/or the distance between the first electrode layer and the second electrode layer is 1-50 μm.