CN117320466A - Laminated battery, battery assembly and photovoltaic system - Google Patents
Laminated battery, battery assembly and photovoltaic system Download PDFInfo
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- CN117320466A CN117320466A CN202310920793.8A CN202310920793A CN117320466A CN 117320466 A CN117320466 A CN 117320466A CN 202310920793 A CN202310920793 A CN 202310920793A CN 117320466 A CN117320466 A CN 117320466A
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- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 61
- 230000005540 biological transmission Effects 0.000 claims abstract description 52
- 238000002161 passivation Methods 0.000 claims description 75
- 230000005525 hole transport Effects 0.000 claims description 67
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 24
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 22
- 239000000395 magnesium oxide Substances 0.000 claims description 22
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 22
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 20
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 claims description 20
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 20
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 18
- 239000011777 magnesium Substances 0.000 claims description 18
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910021595 Copper(I) iodide Inorganic materials 0.000 claims description 12
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 12
- 229910052792 caesium Inorganic materials 0.000 claims description 12
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 12
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 claims description 12
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 12
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 12
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 12
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 11
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 10
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 10
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 10
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 10
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 10
- 229910052744 lithium Inorganic materials 0.000 claims description 10
- 229910052749 magnesium Inorganic materials 0.000 claims description 10
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 10
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 10
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 10
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 10
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 25
- 238000006243 chemical reaction Methods 0.000 abstract description 24
- 238000010521 absorption reaction Methods 0.000 abstract description 20
- 230000003071 parasitic effect Effects 0.000 abstract description 20
- 230000005641 tunneling Effects 0.000 abstract description 8
- 239000002210 silicon-based material Substances 0.000 description 48
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 32
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 230000000694 effects Effects 0.000 description 20
- 239000002313 adhesive film Substances 0.000 description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 10
- 229910001887 tin oxide Inorganic materials 0.000 description 10
- 239000011521 glass Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- 238000009825 accumulation Methods 0.000 description 6
- 229920001167 Poly(triaryl amine) Polymers 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 5
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 5
- 125000003184 C60 fullerene group Chemical group 0.000 description 4
- 229920000144 PEDOT:PSS Polymers 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910007717 ZnSnO Inorganic materials 0.000 description 4
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- BWFPGXWASODCHM-UHFFFAOYSA-N copper monosulfide Chemical compound [Cu]=S BWFPGXWASODCHM-UHFFFAOYSA-N 0.000 description 4
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 description 4
- 239000002360 explosive Substances 0.000 description 4
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 3
- BQVVSSAWECGTRN-UHFFFAOYSA-L copper;dithiocyanate Chemical compound [Cu+2].[S-]C#N.[S-]C#N BQVVSSAWECGTRN-UHFFFAOYSA-L 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- -1 IZO) Chemical compound 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001508 alkali metal halide Inorganic materials 0.000 description 1
- 150000008045 alkali metal halides Chemical class 0.000 description 1
- 229910001615 alkaline earth metal halide Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- UGFMBZYKVQSQFX-UHFFFAOYSA-N para-methoxy-n-methylamphetamine Chemical compound CNC(C)CC1=CC=C(OC)C=C1 UGFMBZYKVQSQFX-UHFFFAOYSA-N 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 229940103091 potassium benzoate Drugs 0.000 description 1
- 235000010235 potassium benzoate Nutrition 0.000 description 1
- 239000004300 potassium benzoate Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
- H10K39/15—Organic photovoltaic [PV] modules; Arrays of single organic PV cells comprising both organic PV cells and inorganic PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The application is applicable to the technical field of solar cells and provides a laminated cell, a cell assembly and a photovoltaic system. The laminated battery comprises a perovskite subcell, a buffer layer and a crystalline silicon subcell, wherein the perovskite subcell comprises a first polar transmission layer, a perovskite layer and a second polar transmission layer which are sequentially laminated along the direction from the perovskite subcell to the crystalline silicon subcell, the crystalline silicon subcell comprises a third polar transmission layer, a crystalline silicon layer and a fourth polar transmission layer which are sequentially laminated, and the polarity of the buffer layer is the same as that of the third polar transmission layer and is opposite to that of the second polar transmission layer. Therefore, the polarity of the buffer layer is the same as that of the adjacent polarity transmission layer at the side of the crystalline silicon subcell and opposite to that of the adjacent polarity transmission layer at the side of the perovskite subcell, so that tunneling contact can be formed between the side of the perovskite subcell and the second polarity transmission layer, lower parasitic absorption can be realized, the photoelectric conversion efficiency is improved, the manufacturing process is simpler, and the cost is reduced.
Description
Technical Field
The application belongs to the technical field of solar cells, and particularly relates to a laminated cell, a cell assembly and a photovoltaic system.
Background
Solar cell power generation is a sustainable clean energy source that uses the photovoltaic effect of semiconductor p-n junctions to convert sunlight into electrical energy. The two solar cells may be stacked to form a stacked cell.
In the related art, when a perovskite battery and a crystalline silicon battery are stacked, parasitic absorption of the formed stacked battery is high, resulting in low photoelectric conversion efficiency.
Based on this, how to design a stacked cell to reduce parasitic absorption becomes a problem to be solved.
Disclosure of Invention
The application provides a laminated battery, a battery assembly and a photovoltaic system, and aims to solve the problem of how to design the laminated battery to reduce parasitic absorption.
The utility model provides a laminated battery, including perovskite subcell, buffer layer and brilliant silicon subcell, follow perovskite subcell extremely the direction of brilliant silicon subcell, perovskite subcell is including first polarity transmission layer, perovskite layer and the second polarity transmission layer of laminating in proper order, brilliant silicon subcell is including the third polarity transmission layer, brilliant silicon layer and the fourth polarity transmission layer of laminating in proper order, the polarity of buffer layer with the polarity of third polarity transmission layer is the same, with the polarity of second polarity transmission layer is opposite.
Optionally, the thickness of the buffer layer is 0.5nm-100nm.
Optionally, the projection of the buffer layer on the second polar transport layer completely overlaps the second polar transport layer, and the projection on the third polar transport layer completely overlaps the third polar transport layer.
Optionally, the first polar transport layer is a first hole transport layer, the second polar transport layer is a first electron transport layer, the buffer layer is a hole transport buffer layer, the third polar transport layer is a second hole transport layer, and the fourth polar transport layer is a second electron transport layer;
or, the first polar transport layer is a first electron transport layer, the second polar transport layer is a first hole transport layer, the buffer layer is an electron transport buffer layer, the third polar transport layer is a second electron transport layer, and the fourth polar transport layer is a second hole transport layer.
Optionally, the first hole transport layer includes PEDOT: at least one of PSS, nickel oxide, spiro-oMeTad, copper phthalocyanine, cuprous thiocyanate and PTAA;
and/or the first electron transport layer comprises at least one of C60, PCBM, titanium oxide, zinc stannate, and tin oxide.
Optionally, the hole transport buffer layer includes: at least one of doped crystalline silicon layer, doped amorphous silicon, doped polysilicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride, PEDOT, PSS, vanadium oxide, molybdenum oxide, nickel oxide, chromium oxide, tungsten oxide, cuprous iodide and copper sulfide.
Optionally, the electron transport buffer layer includes: at least one of doped crystalline silicon layer, doped amorphous silicon, doped polycrystalline silicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride, magnesium oxide, titanium oxide, zinc oxide, titanium nitride, titanium oxynitride, lithium fluoride, magnesium fluoride, cesium iodide, magnesium, lithium, cesium, and ytterbium.
Optionally, the perovskite subcell includes a first interface passivation layer located between the first polarity transport layer and the perovskite layer;
and/or the perovskite subcell includes a second interface passivation layer located between the second polar transport layer and the perovskite layer.
Optionally, the crystalline silicon subcell includes a third interface passivation layer located between the third polar transport layer and the crystalline silicon layer;
And/or the crystalline silicon subcell comprises a fourth interface passivation layer located between the fourth polar transport layer and the crystalline silicon layer.
The battery assembly provided by the application comprises the laminated battery.
The photovoltaic system provided by the application comprises the battery assembly.
According to the laminated battery, the battery assembly and the photovoltaic system, the polarity of the buffer layer is the same as that of the adjacent polarity transmission layer on the side of the crystalline silicon sub-battery, and is opposite to that of the adjacent polarity transmission layer on the side of the perovskite sub-battery, so that tunneling contact can be formed between the side of the perovskite battery and the second polarity transmission layer, lower parasitic absorption can be realized, the photoelectric conversion efficiency is improved, the manufacturing process is simpler, and the cost is reduced.
Drawings
Fig. 1 is a schematic structural view of a laminated battery according to an embodiment of the present application;
fig. 2 is a schematic structural view of a laminate battery according to an embodiment of the present application;
description of main reference numerals:
the laminated cell 100, the perovskite subcell 10, the first polarity transport layer 11, the first interface passivation layer 12, the perovskite layer 13, the second interface passivation layer 14, the second polarity transport layer 15, the buffer layer 30, the crystalline silicon subcell 20, the third polarity transport layer 21, the third interface passivation layer 22, the crystalline silicon layer 23, the fourth interface passivation layer 24, and the fourth polarity transport layer 25.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples. Examples of the embodiments are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements throughout or elements having like or similar functionality. The embodiments described below by referring to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application. Furthermore, it should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
In the description of the present application, it should be understood that the terms "length," "width," "upper," "lower," "left," "right," "horizontal," "top," "bottom," and the like indicate orientations or positional relationships based on the orientations or positional relationships illustrated in the drawings, merely to facilitate description of the present application and simplify description, and do not indicate or imply that the devices or elements being referred to must have a particular orientation, be configured and operated in a particular orientation, and are therefore not to be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
In this application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, and may also include the first and second features not being in direct contact but being in contact with each other by way of additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
The following disclosure provides many different embodiments, or examples, for implementing different structures of the application. In order to simplify the disclosure of the present application, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not in themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present application provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or usage scenarios for other materials.
In the application, the polarity of the buffer layer is the same as that of the adjacent polarity transmission layer at the side of the crystalline silicon subcell, and is opposite to that of the adjacent polarity transmission layer at the side of the perovskite subcell, so that tunneling contact can be formed between the side of the perovskite subcell and the second polarity transmission layer, lower parasitic absorption can be realized, the photoelectric conversion efficiency is improved, the manufacturing process is simpler, and the cost is reduced.
Example 1
Referring to fig. 1, a laminated battery 100 of the embodiment of the present application includes a perovskite subcell 10, a buffer layer 30 and a crystalline silicon subcell 20, wherein the perovskite subcell 10 includes a first polar transmission layer 11, a perovskite layer 13 and a second polar transmission layer 15 sequentially laminated along a direction from the perovskite subcell 10 to the crystalline silicon subcell 20, the crystalline silicon subcell 20 includes a third polar transmission layer 21, a crystalline silicon layer 23 and a fourth polar transmission layer 25 sequentially laminated, and a polarity of the buffer layer 30 is the same as a polarity of the third polar transmission layer 21 and is opposite to a polarity of the second polar transmission layer 15.
In the laminated battery 100 of the embodiment of the present application, since the polarity of the buffer layer 30 is the same as the polarity of the adjacent polarity transmission layer of the crystalline silicon subcell side 20 and opposite to the polarity of the adjacent polarity transmission layer of the perovskite subcell side 10, tunneling contact can be formed between the perovskite subcell side 10 and the second polarity transmission layer 15, so that lower parasitic absorption can be realized, which is beneficial to improving the photoelectric conversion efficiency, and the manufacturing process is simpler and beneficial to reducing the cost.
In this embodiment, the perovskite subcell 10 is a top cell and the crystalline silicon subcell 20 is a bottom cell. It will be appreciated that in other embodiments, the crystalline silicon subcell 20 may be a top cell and the perovskite subcell 10 a bottom cell.
In particular, the perovskite subcell 10 may include a first electrode located on a side of the first polarity transport layer 11 facing away from the perovskite layer 13.
Further, the first electrode comprises a metal electrode and/or a transparent conductive oxide (Transparent Conductive Oxide, TCO). For example, the first electrode comprises a metal electrode, excluding TCO; as another example, the first electrode does not include a metal electrode, including TCO; for another example, the first electrode includes a metal electrode and a TCO.
It can be appreciated that the metal electrode has better conductivity, stronger corrosion resistance, and lower manufacturing cost, and the use of the metal electrode as the first electrode is advantageous in reducing the manufacturing cost of the laminated battery 100, and improving the reliability and photoelectric conversion efficiency of the laminated battery 100.
Further, the metal electrode may cover the entire area of the first polarity transfer layer 11, i.e., the metal electrode may be an entire metal electrode; the metal electrode may also cover a partial region of the first polarity transfer layer 11, for example, the metal electrode is a gate line.
Still further, the metal electrode may be made of at least one of silver, gold, aluminum, copper, nickel, chromium.
It can be appreciated that the TCO can effectively collect the current of the laminate battery 100, ensuring the normal operation of the laminate battery 100. Furthermore, TCOs are highly transmissive and can be antireflection, allowing for reduced solar losses. Thus, the photoelectric conversion efficiency is advantageously improved.
Still further, the TCO includes at least one of fluorine doped Tin Oxide (Fluorine doped Tin Oxide, FTO), tungsten doped Indium Oxide (In 2O3: W, IWO), cadmium doped Indium Oxide (ICO), indium Oxide (In 2O 3), indium zinc Oxide (Indium Zinc Oxide, IZO), indium Tin Oxide (ITO), aluminum doped zinc Oxide (Aluminum doped Zinc Oxide, AZO), aluminum doped Tin Oxide (Aluminum doped Tin Oxide, ATO), indium doped Tin Oxide (Indium doped Gallium Oxide, IGO).
Further, the TCO may cover the entire area of the first polarity transmission layer 11, or may cover a part of the area of the first polarity transmission layer 11.
Specifically, the polarities of the first and second polar transport layers 11 and 15 are opposite. In other words, in the case where the first polar transport layer 11 is the first hole transport layer, the second polar transport layer 15 is the first electron transport layer; in the case where the first polar transport layer 11 is a first electron transport layer, the second polar transport layer 15 is a first hole transport layer.
Specifically, the thickness of the first polar transport layer 11 is 10nm to 40nm. For example, 10nm, 15nm, 20nm, 30nm, 40nm. In this way, the thickness of the first polarity transfer layer 11 is made to be in a proper range, ensuring the effect of transferring one carrier and blocking the other carrier.
Specifically, the thickness of the second polar transport layer 15 is 10nm to 40nm. For example, 10nm, 15nm, 20nm, 30nm, 40nm. In this way, the thickness of the second polar transport layer 15 is made to be in a proper range, ensuring the effect of transporting one carrier and blocking the other carrier.
Specifically, the crystal structure of the material of the perovskite layer 13 is ABX 3 Type A is Cs + 、CH(NH 2 ) 2 + 、CH 3 NH 3 + 、C(NH 2 ) 3 + At least one of B is Pb 2+ 、Sn 2+ At least one of the X is Br - 、I - 、Cl - At least one of them. Thus, the perovskite layer 13 has better light absorption effect, and is beneficial to improving the photoelectric conversion efficiency.
Specifically, the perovskite layer 13 has a thickness of 300nm to 600nm. For example 300nm, 400nm, 500nm, 600nm. Therefore, the thickness of the perovskite layer 13 is in a proper range, so that the light absorption effect is good, and the photoelectric conversion efficiency is improved.
Specifically, the polarity of the third polar transport layer 21 and the fourth polar transport layer 25 are opposite. In other words, in the case where the third polar transport layer 21 is the third hole transport layer, the fourth polar transport layer 25 is the third electron transport layer; in the case where the third polar transport layer 21 is a third electron transport layer, the fourth polar transport layer 25 is a third hole transport layer.
Specifically, the thickness of the third polar transport layer 21 is 0.5nm to 2000nm. For example, 0.5nm, 1nm, 1.5nm, 10nm, 20nm, 100nm, 500nm, 1800nm, 2000nm. In this way, the thickness of the third polar transport layer 21 is made to be in a proper range, ensuring the effect of transporting one carrier and blocking the other carrier. In this way, parasitic absorption may be reduced while ensuring that one carrier is transported and the other carrier is blocked.
Preferably, the thickness of the third polar transport layer 21 is 0.5nm to 20nm. For example, 0.5nm, 1nm, 1.5nm, 8nm, 10nm, 15nm, 20nm. Thus, the effect of reducing parasitic absorption is better.
Specifically, the fourth polar transport layer 25 has a thickness of 0.5nm to 2000nm. For example, 0.5nm, 1nm, 1.5nm, 10nm, 20nm, 100nm, 500nm, 1800nm, 2000nm. In this way, the thickness of the fourth polar transport layer 25 is made to be in a proper range, ensuring the effect of transporting one carrier and blocking the other carrier. In this way, parasitic absorption may be reduced while ensuring that one carrier is transported and the other carrier is blocked.
Preferably, the fourth polar transport layer 25 has a thickness of 0.5nm to 20nm. For example, 0.5nm, 1nm, 1.5nm, 8nm, 10nm, 15nm, 20nm. Thus, the effect of reducing parasitic absorption is better.
Specifically, the crystalline silicon layer 23 may be a P-type silicon substrate, an N-type silicon substrate, a single crystal substrate, or a polycrystalline silicon substrate.
In particular, the crystalline silicon subcell 20 may include a second electrode located on a side of the fourth polar transport layer 25 facing away from the crystalline silicon layer 23.
Further, the second electrode comprises a metal electrode and/or a transparent conductive oxide (Transparent Conductive Oxide, TCO). For example, the second electrode comprises a metal electrode, excluding TCO; as another example, the second electrode does not include a metal electrode, including TCO; for another example, the second electrode includes a metal electrode and a TCO.
The explanation and explanation of the second electrode may refer to the explanation and explanation of the first electrode in the foregoing, and will not be repeated here to avoid redundancy.
It is noted that in the case where the first electrode and the second electrode are both metal electrodes, at least one of the first electrode and the second electrode is a gate line electrode. In this way, the first electrode and the second electrode are prevented from being covered with the polarity transmission layer over the entire surface, so that light cannot be incident to the battery.
Example two
In some alternative embodiments, the thickness of buffer layer 30 is 0.5nm-100nm. For example, 0.5nm, 1nm, 2nm, 8nm, 18nm, 50nm, 90nm, 100nm.
In this way, the thickness of the buffer layer 30 is in a proper range, so that the poor effect of forming tunneling contact caused by too small thickness can be avoided, and the contact resistance, parasitic absorption and high cost caused by too large thickness can also be avoided.
Preferably, the thickness of the buffer layer 30 is 2nm to 18nm. For example, 2nm, 3nm, 5nm, 8nm, 10nm, 12nm, 15nm, 18nm. Thus, the electric performance and the cost are both considered, and the overall effect is better.
Example III
In some alternative embodiments, the projection of buffer layer 30 onto second polar transport layer 15 completely overlaps second polar transport layer 15 and the projection onto third polar transport layer 21 completely overlaps third polar transport layer 21.
In other words, the buffer layer 30 covers the entire area of the second polar transport layer 15 and covers the entire area of the third polar transport layer 21, and the second polar transport layer 15 and the third polar transport layer 21 are completely separated by the buffer layer 30.
Thus, the buffer layer 20 and the whole surface of the second polar transport layer 15 form tunneling contact, and the effect of improving the photoelectric conversion efficiency is better.
It will be appreciated that in other embodiments, the projection of the buffer layer 30 onto the second polar transport layer 15 may be located within the second polar transport layer 15, and the projection onto the third polar transport layer 21 may be located within the third polar transport layer 21. In other words, the buffer layer 30 covers a partial region of the second polar transport layer 15 and a partial region of the third polar transport layer 21, the partial regions of the second polar transport layer 15 and the third polar transport layer 21 are separated by the buffer layer 30, and the remaining regions of the second polar transport layer 15 and the third polar transport layer 21 are in contact with each other. Thus, the amount of the buffer layer 30 can be reduced, and the cost can be reduced.
Example IV
In some alternative embodiments, the first polar transport layer 11 is a first hole transport layer, the second polar transport layer 15 is a first electron transport layer, the buffer layer 30 is a hole transport buffer layer, the third polar transport layer 21 is a second hole transport layer, and the fourth polar transport layer 25 is a second electron transport layer.
In this way, in the direction from the perovskite subcell 10 to the crystalline silicon subcell 20, the five polarity transport layers are respectively a hole transport layer, an electron transport layer, a hole transport layer, and an electron transport layer, so that the polarities of the buffer layer 30 and the third polarity transport layer 21 are the same, and the polarities of the buffer layer and the third polarity transport layer are opposite to those of the second polarity transport layer 15, thereby reducing parasitic absorption and simplifying the manufacturing process.
In some alternative embodiments, the first polar transport layer 11 is a first electron transport layer, the second polar transport layer 15 is a first hole transport layer, the buffer layer 30 is an electron transport buffer layer, the third polar transport layer 21 is a second electron transport layer, and the fourth polar transport layer 25 is a second hole transport layer.
In this way, in the direction from the perovskite subcell 10 to the crystalline silicon subcell 20, the five polarity transport layers are respectively an electron transport layer, a hole transport layer, an electron transport layer, and a hole transport layer, so that the polarities of the buffer layer 30 and the third polarity transport layer 21 are the same, and the polarities of the buffer layer and the third polarity transport layer are opposite to those of the second polarity transport layer 15, thereby reducing parasitic absorption and simplifying the manufacturing process.
In some alternative embodiments, the first hole transport layer comprises PEDOT: at least one of PSS, nickel oxide (NiOx), spira-oMeTad, copper phthalocyanine (CuPc), copper thiocyanate (CuSCN), and PTAA. In other words, the first hole transport layer comprises PEDOT: one or more of PSS, nickel oxide (NiOx), spira-oMeTad, copper phthalocyanine (CuPc), copper thiocyanate (CuSCN), and PTAA.
For example, the first hole transport layer includes PEDOT: PSS, nickel oxide (NiOx), spiro-oMeTad, copper phthalocyanine (CuPc), copper thiocyanate (CuSCN), and PTAA; as another example, the first hole transport layer includes PEDOT: PSS; for another example, the first hole transport layer includes nickel oxide (NiOx) and PTAA. The specific form of the first hole transport layer is not limited herein.
Thus, holes excited by sunlight can be timely transmitted through the first hole transport layer, and the influence of hole accumulation on the service life of the laminated battery 100 is avoided. In addition, the hole transport layer can also block electrons, so that the recombination of holes and electrons is reduced, and the photoelectric conversion efficiency is improved. Furthermore, the first hole transport layer in various forms is provided, so that the method can adapt to more actual production scenes.
In some alternative embodiments, the first electron transport layer comprises C60, PCBM, titanium oxide (TiO 2 ) Zinc oxide (ZnO), zinc stannate (ZnSnO) 4 ) And tin oxide (SnO) 2 ) At least one of them. In other words, the first electron transport layer comprises C60, PCBM, titanium oxide (TiO 2 ) Zinc oxide (ZnO), zinc stannate (ZnSnO) 4 ) And tin oxide (SnO) 2 ) One or more of the following.
For example, the first electron transport layer comprises C60, PCBM, titanium oxide (TiO 2 ) Zinc oxide (ZnO), zinc stannate (ZnSnO) 4 ) And tin oxide (SnO) 2 ) The method comprises the steps of carrying out a first treatment on the surface of the As another example, the first electron transport layer includes C60; for another example, the first electron transport layer includes zinc oxide (ZnO), zinc stannate (ZnSnO 4 ) And tin oxide (SnO) 2 ). The specific form of the first electron transport layer is not limited herein.
Thus, electrons excited by sunlight can be timely transmitted through the first electron transport layer, and the influence of electron accumulation on the service life of the laminated battery 100 is avoided. In addition, the electron transport layer can also block holes, so that the recombination of electrons and holes is reduced, and the photoelectric conversion efficiency is improved. Furthermore, the first electron transport layer in various forms is provided, so that the method can adapt to more actual production scenes.
Example five
In some alternative embodiments, the hole transport buffer layer comprises: at least one of doped crystalline silicon layer, doped amorphous silicon, doped polysilicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride, PEDOT, PSS, vanadium oxide, molybdenum oxide, nickel oxide, chromium oxide, tungsten oxide, cuprous iodide and copper sulfide.
In other words, the hole transport buffer layer includes: one or more of doped crystalline silicon layer, doped amorphous silicon, doped polysilicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride, PEDOT, PSS, vanadium oxide, molybdenum oxide, nickel oxide, chromium oxide, tungsten oxide, cuprous iodide and copper sulfide.
For example, the hole transport buffer layer includes a doped crystalline silicon layer, doped amorphous silicon, doped polysilicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride, PEDOT: PSS, vanadium oxide, molybdenum oxide, nickel oxide, chromium oxide, tungsten oxide, cuprous iodide, and copper sulfide; as another example, the hole transport buffer layer comprises a doped crystalline silicon layer; for another example, the hole transport buffer layer includes tungsten oxide, cuprous iodide, and cupric sulfide. The specific form of the hole transport buffer layer is not limited herein.
Thus, holes excited by sunlight can be timely transmitted through the hole transmission buffer layer, and the influence of hole accumulation on the service life of the laminated battery 100 is avoided. In addition, the hole transport layer can also block electrons, so that the recombination of holes and electrons is reduced, and the photoelectric conversion efficiency is improved. Furthermore, the hole transport buffer layer in various forms is provided, so that the device can adapt to more actual production scenes.
It is understood that the hole transport buffer layer may comprise a silicon material and/or a non-silicon material. For example, the hole transport buffer layer includes a silicon material and a non-silicon material; as another example, the hole transport buffer layer includes a silicon material and does not include a non-silicon material; for another example, the hole transport buffer layer includes a non-silicon material and does not include a silicon material. The silicon material is, for example, a doped crystalline silicon layer, doped amorphous silicon, doped polysilicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride. Non-silicon materials are for example PEDOT PSS, vanadium oxide, molybdenum oxide, nickel oxide, chromium oxide, tungsten oxide, cuprous iodide and copper sulphide.
Preferably, the hole transport buffer layer comprises a non-silicon material. Therefore, when the hole transport buffer layer is manufactured, flammable and explosive reaction gas is not needed, and the manufacturing safety is higher. In addition, the non-silicon material is prepared to be used as a hole transmission buffer layer, so that the instrument is cheaper, and the production cost is reduced. Meanwhile, parasitic absorption can be reduced, and photoelectric conversion efficiency is improved.
Note that the hole transport buffer layer is made of a different material than the third polar transport layer is made of the second hole transport layer.
Example six
In some alternative embodiments, the electron transport buffer layer comprises: at least one of doped crystalline silicon layer, doped amorphous silicon, doped polycrystalline silicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride, magnesium oxide (MgO), titanium oxide (TiO 2), zinc oxide (ZnO), titanium nitride (TiN), titanium oxynitride (lino), lithium fluoride (LiFx), magnesium fluoride (MgFx), cesium fluoride (CsF), cesium iodide (CsI), magnesium (Mg), lithium (Li), cesium (Sc), and ytterbium (Yb).
In other words, the electron transport buffer layer includes: doped crystalline silicon layer, doped amorphous silicon, doped polysilicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride, magnesium oxide (MgO), titanium oxide (TiO 2), zinc oxide (ZnO), titanium nitride (TiN), titanium oxynitride (lino), lithium fluoride (LiFx), magnesium fluoride (MgFx), cesium fluoride (CsF), cesium iodide (CsI), magnesium (Mg), lithium (Li), cesium (Sc), and ytterbium (Yb).
For example, the electron transport buffer layer includes: doped crystalline silicon layer, doped amorphous silicon, doped polysilicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride, magnesium oxide (MgO), titanium oxide (TiO 2), zinc oxide (ZnO), titanium nitride (TiN), titanium oxynitride (lino), lithium fluoride (LiFx), magnesium fluoride (MgFx), cesium fluoride (CsF), cesium iodide (CsI), magnesium (Mg), lithium (Li), cesium (Sc), and ytterbium (Yb); as another example, the electron transport buffer layer includes: doping the crystalline silicon layer; for another example, the electron transport buffer layer includes magnesium oxide (MgO), cesium (Sc), and ytterbium (Yb). The specific form of the electron transport buffer layer is not limited herein.
Thus, electrons excited by sunlight can be timely transmitted through the electron transmission buffer layer, and the influence of electron accumulation on the service life of the laminated battery 100 is avoided. In addition, the electron transport layer can also block holes, so that the recombination of electrons and holes is reduced, and the photoelectric conversion efficiency is improved. Moreover, the electron transmission buffer layer in various forms is provided, so that the electron transmission buffer layer can adapt to more actual production scenes.
It is understood that the electron transport buffer layer may comprise a silicon material and/or a non-silicon material. For example, the electron transport buffer layer includes a silicon material and a non-silicon material; as another example, the electron transport buffer layer includes a silicon material and does not include a non-silicon material; for another example, the electron transport buffer layer includes a non-silicon material and does not include a silicon material. The silicon material is, for example, a doped crystalline silicon layer, doped amorphous silicon, doped polysilicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride. Examples of the non-silicon material are magnesium oxide (MgO), titanium oxide (TiO 2), zinc oxide (ZnO), titanium nitride (TiN), titanium oxynitride (lino), lithium fluoride (LiFx), magnesium fluoride (MgFx), cesium fluoride (CsF), cesium iodide (CsI), magnesium (Mg), lithium (Li), cesium (Sc), and ytterbium (Yb).
Preferably, the electron transport buffer layer comprises a non-silicon material. Therefore, when the electron transport buffer layer is manufactured, flammable and explosive reaction gas is not needed, and the preparation safety is higher. In addition, the non-silicon material is prepared to be used as an electron transmission buffer layer, so that the instrument is cheaper, and the production cost is reduced. Meanwhile, parasitic absorption can be reduced, and photoelectric conversion efficiency is improved.
Note that the material of the electron transport buffer layer is different from the material of the second electron transport layer of the third polar transport layer.
In some alternative embodiments, the second hole transport layer comprises: at least one of doped crystalline silicon layer, doped amorphous silicon, doped polysilicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride, PEDOT, PSS, vanadium oxide, molybdenum oxide, nickel oxide, chromium oxide, tungsten oxide, cuprous iodide and copper sulfide.
In other words, the second hole transport layer includes: one or more of doped crystalline silicon layer, doped amorphous silicon, doped polysilicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride, PEDOT, PSS, vanadium oxide, molybdenum oxide, nickel oxide, chromium oxide, tungsten oxide, cuprous iodide and copper sulfide.
For example, the second hole transport layer includes a doped crystalline silicon layer, doped amorphous silicon, doped polysilicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride, PEDOT: PSS, vanadium oxide, molybdenum oxide, nickel oxide, chromium oxide, tungsten oxide, cuprous iodide, and copper sulfide; as another example, the second hole transport layer comprises a doped crystalline silicon layer; for another example, the second hole transport layer includes tungsten oxide, cuprous iodide, and cupric sulfide. The specific form of the second hole transport layer is not limited herein.
Thus, holes excited by sunlight can be timely transmitted through the second hole transport layer, and the influence of hole accumulation on the service life of the laminated battery 100 is avoided. In addition, the hole transport layer can also block electrons, so that the recombination of holes and electrons is reduced, and the photoelectric conversion efficiency is improved. Moreover, the second hole transport layer in various forms is provided, so that the method can adapt to more actual production scenes.
It is understood that the second hole transport layer may comprise a silicon material and/or a non-silicon material. For example, the second hole transport layer includes a silicon material and a non-silicon material; as another example, the second hole transport layer includes a silicon material and does not include a non-silicon material; for another example, the second hole transport layer includes a non-silicon material and does not include a silicon material. The silicon material is, for example, a doped crystalline silicon layer, doped amorphous silicon, doped polysilicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride. Non-silicon materials are for example PEDOT PSS, vanadium oxide, molybdenum oxide, nickel oxide, chromium oxide, tungsten oxide, cuprous iodide and copper sulphide.
Preferably, the second hole transport layer comprises a non-silicon material. Therefore, the second hole transport layer is manufactured without using flammable and explosive reaction gas, so that the preparation safety is higher. In addition, the non-silicon material is prepared as the second hole transport layer, so that the instrument is cheaper, and the production cost is reduced. Meanwhile, parasitic absorption can be reduced, and photoelectric conversion efficiency is improved.
In some alternative embodiments, the second electron transport layer comprises: at least one of doped crystalline silicon layer, doped amorphous silicon, doped polycrystalline silicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride, magnesium oxide (MgO), titanium oxide (TiO 2), zinc oxide (ZnO), titanium nitride (TiN), titanium oxynitride (lino), lithium fluoride (LiFx), magnesium fluoride (MgFx), cesium fluoride (CsF), cesium iodide (CsI), magnesium (Mg), lithium (Li), cesium (Sc), and ytterbium (Yb).
In other words, the second electron transport layer includes: doped crystalline silicon layer, doped amorphous silicon, doped polysilicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride, magnesium oxide (MgO), titanium oxide (TiO 2), zinc oxide (ZnO), titanium nitride (TiN), titanium oxynitride (lino), lithium fluoride (LiFx), magnesium fluoride (MgFx), cesium fluoride (CsF), cesium iodide (CsI), magnesium (Mg), lithium (Li), cesium (Sc), and ytterbium (Yb).
For example, the second electron transport layer includes: doped crystalline silicon layer, doped amorphous silicon, doped polysilicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride, magnesium oxide (MgO), titanium oxide (TiO 2), zinc oxide (ZnO), titanium nitride (TiN), titanium oxynitride (lino), lithium fluoride (LiFx), magnesium fluoride (MgFx), cesium fluoride (CsF), cesium iodide (CsI), magnesium (Mg), lithium (Li), cesium (Sc), and ytterbium (Yb); as another example, the second electron transport layer includes: doping the crystalline silicon layer; for another example, the second electron transport layer includes magnesium oxide (MgO), cesium (Sc), and ytterbium (Yb). The specific form of the second electron transport layer is not limited herein.
Thus, electrons excited by sunlight can be timely transmitted through the second electron transport layer, and the influence of electron accumulation on the life of the laminated battery 100 is avoided. In addition, the electron transport layer can also block holes, so that the recombination of electrons and holes is reduced, and the photoelectric conversion efficiency is improved. Moreover, the second electron transport layer in various forms is provided, so that the method can adapt to more actual production scenes.
It is understood that the second electron transport layer may comprise a silicon material and/or a non-silicon material. For example, the second electron transport layer includes a silicon material and a non-silicon material; as another example, the second electron transport layer comprises a silicon material and does not comprise a non-silicon material; for another example, the second electron transport layer includes a non-silicon material and does not include a silicon material. The silicon material is, for example, a doped crystalline silicon layer, doped amorphous silicon, doped polysilicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride. Examples of the non-silicon material are magnesium oxide (MgO), titanium oxide (TiO 2), zinc oxide (ZnO), titanium nitride (TiN), titanium oxynitride (lino), lithium fluoride (LiFx), magnesium fluoride (MgFx), cesium fluoride (CsF), cesium iodide (CsI), magnesium (Mg), lithium (Li), cesium (Sc), and ytterbium (Yb).
Preferably, the second electron transport layer comprises a non-silicon material. Therefore, the second electron transport layer is manufactured without using flammable and explosive reaction gas, so that the preparation safety is higher. In addition, the non-silicon material is prepared as the second electron transport layer, so that the instrument is cheaper, and the production cost is reduced. Meanwhile, parasitic absorption can be reduced, and photoelectric conversion efficiency is improved.
Example seven
Referring to fig. 2, in some alternative embodiments, the perovskite subcell 10 includes a first interface passivation layer 12, the first interface passivation layer 12 being located between the first polarity transport layer 11 and the perovskite layer 13. And/or the perovskite subcell 10 includes a second interface passivation layer 14, the second interface passivation layer 14 being located between the second polar transport layer 15 and the perovskite layer 13.
Thus, the interface passivation between the polar transport layer and the perovskite layer 13 is realized through the interface passivation layer, so that recombination can be reduced, and the photoelectric conversion efficiency can be improved.
Specifically, in the example of fig. 2, the perovskite subcell 10 includes a first interface passivation layer 12 and a second interface passivation layer 14. It will be appreciated that in other embodiments, the perovskite subcell 10 may include the first interface passivation layer 12 without the second interface passivation layer 14; alternatively, the perovskite subcell 10 may include the second interface passivation layer 14 without the first interface passivation layer 12.
Specifically, one of the first interface passivation layer 12 and the second interface passivation layer 14 is an electronic interface passivation layer, and the other is a hole interface passivation layer.
Further, the electronic interface passivation layer comprises at least one of a polyurea layer, an amino molecule compound, an alkali metal halide, and an alkaline earth metal halide. Thus, various forms of the electronic interface passivation layer are provided, and the electronic interface passivation layer can adapt to more actual production scenes.
Further, the hole interface passivation layer comprises at least one of potassium benzoate, nickel oxide and PMMA. Thus, various forms of the hole interface passivation layer are provided, and the method can adapt to more actual production scenes.
Specifically, the thickness of the first interface passivation layer 12 is 0.2nm to 30nm. For example, 0.2nm, 1nm, 5nm, 8nm, 10nm, 20nm, 30nm. In this way, the thickness of the first interface passivation layer 12 is in a suitable range, so that poor passivation effect caused by too small thickness can be avoided, and too high resistivity caused by too large thickness can also be avoided.
Preferably, the thickness of the first interface passivation layer 12 is 0.2nm-15nm. For example, 0.2nm, 0.5nm, 0.8nm, 1nm, 8nm, 10nm, 15nm. Therefore, the passivation effect and the resistivity are considered, and the overall effect is better.
Specifically, the thickness of the second interface passivation layer 14 is 0.2nm to 30nm. For example, 0.2nm, 1nm, 5nm, 8nm, 10nm, 20nm, 30nm. In this way, the thickness of the second interface passivation layer 14 is in a suitable range, so that poor passivation effect caused by too small thickness can be avoided, and too high resistivity caused by too large thickness can also be avoided.
Preferably, the thickness of the second interface passivation layer 14 is 0.2nm-15nm. For example, 0.2nm, 0.5nm, 0.8nm, 1nm, 8nm, 10nm, 15nm. Therefore, the passivation effect and the resistivity are considered, and the overall effect is better.
Example eight
In some alternative embodiments, the crystalline silicon subcell 20 includes a third interface passivation layer 22, the third interface passivation layer 22 being located between the third polar transport layer 21 and the crystalline silicon layer 23; and/or the crystalline silicon subcell 20 includes a fourth interface passivation layer 24, the fourth interface passivation layer 24 being located between the fourth polar transport layer 25 and the crystalline silicon layer 23.
Thus, the interface passivation between the polar transport layer and the crystalline silicon layer 23 is realized by the interface passivation layer, so that the recombination can be reduced, and the photoelectric conversion efficiency can be improved.
Specifically, in the example of fig. 2, the perovskite subcell 10 includes a third interface passivation layer 22 and a fourth interface passivation layer 24. It will be appreciated that in other embodiments, the perovskite subcell 10 may include a third interface passivation layer 22, excluding a fourth interface passivation layer 24; alternatively, the perovskite subcell 10 may include a fourth interface passivation layer 24, excluding the third interface passivation layer 22.
Specifically, one of the third interface passivation layer 22 and the fourth interface passivation layer 24 is an electronic interface passivation layer, and the other is a hole interface passivation layer.
Specifically, the third interface passivation layer 22 includes one or more of silicon oxide, aluminum oxide, silicon nitride, intrinsic amorphous silicon, silicon oxynitride, silicon carbide. In this manner, multiple forms of the third interface passivation layer 22 are provided that can accommodate more practical production scenarios.
Specifically, the thickness of the third interface passivation layer 22 is 0.5nm to 15nm. For example, 0.5nm, 1nm, 5nm, 10nm, 13nm, 15nm. In this way, the thickness of the third interface passivation layer 22 is in a suitable range, so that poor passivation effect caused by too small thickness can be avoided, and too high resistivity caused by too large thickness can also be avoided.
Further, the third interface passivation layer 22 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide, and the thickness of the third interface passivation layer 22 is 0.5nm to 2nm.
Further, the third interface passivation layer 22 comprises intrinsic amorphous silicon and has a thickness of 1nm to 15nm. For example, 1nm, 3nm, 10nm, 12nm, 15nm. Preferably, the intrinsic amorphous silicon has a thickness of 2nm to 8nm.
Specifically, the fourth interface passivation layer 24 comprises one or more of silicon oxide, aluminum oxide, silicon nitride, intrinsic amorphous silicon, silicon oxynitride, silicon carbide. In this manner, multiple forms of the fourth interface passivation layer 24 are provided that can accommodate more practical production scenarios.
Specifically, the thickness of the fourth interface passivation layer 24 is 0.5nm to 15nm. For example, 0.5nm, 1nm, 5nm, 10nm, 13nm, 15nm. In this way, the thickness of the fourth interface passivation layer 24 is in a suitable range, so that poor passivation effect caused by too small thickness can be avoided, and too high resistivity caused by too large thickness can be avoided.
Further, the fourth interface passivation layer 24 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide, and the thickness of the fourth interface passivation layer 24 is 0.5nm to 2nm.
Further, the fourth interface passivation layer 24 comprises intrinsic amorphous silicon and has a thickness of 1nm to 15nm. For example, 1nm, 3nm, 10nm, 12nm, 15nm. Preferably, the intrinsic amorphous silicon has a thickness of 2nm to 8nm.
Example nine
The battery assembly of the present embodiment includes the laminate battery 100 of any one of embodiments one to eight.
In the battery assembly of the embodiment of the application, since the polarity of the buffer layer 30 in the laminated battery 100 is the same as the polarity of the adjacent polarity transmission layer of the crystalline silicon subcell side 20 and opposite to the polarity of the adjacent polarity transmission layer of the perovskite subcell side 10, tunneling contact can be formed between the perovskite subcell side 10 and the second polarity transmission layer 15, lower parasitic absorption can be realized, the photoelectric conversion efficiency is improved, the manufacturing process is simpler, and the cost is reduced.
In this embodiment, a plurality of stacked batteries in the battery assembly may be sequentially connected in series to form a battery string, so as to realize serial bus output of current, for example, serial connection of battery pieces may be realized by providing a welding strip (bus bar, interconnection bar), a conductive back plate, and the like.
It will be appreciated that in such embodiments, the battery assembly may also include a metal frame, a back sheet, photovoltaic glass, and a glue film. The adhesive film can be filled between the front and back surfaces of the laminated battery and the photovoltaic glass, adjacent battery pieces and the like, and can be a transparent colloid with good light transmission performance and ageing resistance, for example, the adhesive film can be an EVA adhesive film or a POE adhesive film, and the adhesive film can be specifically selected according to actual conditions and is not limited.
The photovoltaic glass may be an ultra-white glass, which has high light transmittance, high transparency, and excellent physical, mechanical, and optical properties, for example, the ultra-white glass may have a light transmittance of 92% or more, which may protect the laminated battery without affecting the efficiency of the laminated battery as much as possible, and may be coated on the adhesive film on the front surface of the laminated battery. Meanwhile, the adhesive film can bond the photovoltaic glass and the laminated battery together, and the laminated battery can be sealed and insulated and waterproof and moistureproof by the adhesive film.
The back plate can be attached to the adhesive film on the back of the laminated battery, can protect and support the laminated battery, has reliable insulativity, water resistance and aging resistance, can be selected multiple times, can be toughened glass, organic glass, an aluminum alloy TPT composite adhesive film and the like, and can be specifically set according to specific conditions without limitation. The whole of backplate, laminate battery, glued membrane and photovoltaic glass constitution can set up on metal frame, and metal frame is as the main external support structure of whole battery module, and can carry out stable support and installation for the battery module, for example, can install the battery module in the position that needs the installation through metal frame.
Examples ten
The photovoltaic system of the embodiment of the present application includes the battery assembly of the ninth embodiment.
In the photovoltaic system of the embodiment of the present application, since the polarity of the buffer layer 30 in the laminated battery 100 is the same as the polarity of the adjacent polarity transmission layer of the crystalline silicon subcell side 20 and opposite to the polarity of the adjacent polarity transmission layer of the perovskite subcell side 10, tunneling contact can be formed between the perovskite subcell side 10 and the second polarity transmission layer 15, so that lower parasitic absorption can be realized, which is beneficial to improving the photoelectric conversion efficiency, and the manufacturing process is simpler and is beneficial to reducing the cost.
In this embodiment, the photovoltaic system may be applied to a photovoltaic power station, such as a ground power station, a roof power station, a water power station, or the like, and may also be applied to a device or apparatus that uses solar energy to generate power, such as a user solar power source, a solar street lamp, a solar car, a solar building, or the like. Of course, it is understood that the application scenario of the photovoltaic system is not limited thereto, that is, the photovoltaic system may be applied to all fields where solar energy is required to generate electricity. Taking a photovoltaic power generation system network as an example, the photovoltaic system can comprise a photovoltaic array, a junction box and an inverter, wherein the photovoltaic array can be an array combination of a plurality of battery assemblies, for example, the plurality of battery assemblies can form a plurality of photovoltaic arrays, the photovoltaic array is connected with the junction box, the junction box can conduct junction on current generated by the photovoltaic array, and the junction box is connected with a commercial power network after the junction current flows through the inverter and is converted into alternating current required by the commercial power network so as to realize solar power supply.
In the description of the present specification, reference to the terms "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiments or examples is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Furthermore, the foregoing description of the preferred embodiment of the invention is provided for the purpose of illustration only, and is not intended to limit the invention to the particular form disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Claims (10)
1. The utility model provides a laminate battery, its characterized in that includes perovskite subcell, buffer layer and brilliant silicon subcell, along from perovskite subcell to the direction of brilliant silicon subcell, perovskite subcell includes first polarity transmission layer, perovskite layer and the second polarity transmission layer of layering in proper order, brilliant silicon subcell includes the third polarity transmission layer, brilliant silicon layer and the fourth polarity transmission layer of layering in proper order, the polarity of buffer layer with the polarity of third polarity transmission layer is the same, opposite with the polarity of second polarity transmission layer.
2. The laminate cell of claim 1, wherein the buffer layer has a thickness of 0.5nm to 100nm.
3. The laminate cell of claim 1, wherein the projection of the buffer layer onto the second polar transport layer completely overlaps the second polar transport layer and the projection onto the third polar transport layer completely overlaps the third polar transport layer.
4. The laminate cell of claim 1, wherein the first polar transport layer is a first hole transport layer, the second polar transport layer is a first electron transport layer, the buffer layer is a hole transport buffer layer, the third polar transport layer is a second hole transport layer, and the fourth polar transport layer is a second electron transport layer;
or, the first polar transport layer is a first electron transport layer, the second polar transport layer is a first hole transport layer, the buffer layer is an electron transport buffer layer, the third polar transport layer is a second electron transport layer, and the fourth polar transport layer is a second hole transport layer.
5. The laminate cell of claim 2, wherein the hole transport buffer layer comprises: at least one of doped crystalline silicon layer, doped amorphous silicon, doped polysilicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride, PEDOT, PSS, vanadium oxide, molybdenum oxide, nickel oxide, chromium oxide, tungsten oxide, cuprous iodide and copper sulfide.
6. The laminate cell of claim 2, wherein the electron transport buffer layer comprises: at least one of doped crystalline silicon layer, doped amorphous silicon, doped polycrystalline silicon, doped nanocrystalline silicon, doped silicon oxide, doped silicon carbide, doped silicon oxynitride, magnesium oxide, titanium oxide, zinc oxide, titanium nitride, titanium oxynitride, lithium fluoride, magnesium fluoride, cesium iodide, magnesium, lithium, cesium, and ytterbium.
7. The laminate cell of claim 1, wherein the perovskite subcell comprises a first interface passivation layer between the first polarity transport layer and the perovskite layer;
and/or the perovskite subcell includes a second interface passivation layer located between the second polar transport layer and the perovskite layer.
8. The laminate cell of claim 1, wherein the crystalline silicon subcell comprises a third interface passivation layer between the third polar transport layer and the crystalline silicon layer;
and/or the crystalline silicon subcell comprises a fourth interface passivation layer located between the fourth polar transport layer and the crystalline silicon layer.
9. A battery assembly comprising the laminated battery according to any one of claims 1 to 8.
10. A photovoltaic system comprising the cell assembly of claim 9.
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| CN202310920793.8A CN117320466A (en) | 2023-07-25 | 2023-07-25 | Laminated battery, battery assembly and photovoltaic system |
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