CN117316896A

CN117316896A - Chip, preparation method thereof and electronic equipment

Info

Publication number: CN117316896A
Application number: CN202210725576.9A
Authority: CN
Inventors: 武龙; 赵志华; 何林峰; 苏帅; 魏巍; 张亚文
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2022-06-24
Filing date: 2022-06-24
Publication date: 2023-12-29
Also published as: WO2023246610A1

Abstract

The embodiment of the application discloses a chip, a preparation method thereof and electronic equipment. Relates to the field of electronic equipment. The problem of poor heat dissipation of the chip is solved. The specific scheme is as follows: the chip comprises a body and a heat dissipation assembly; the body comprises components and a plurality of radiating holes which are distributed at intervals; the heat dissipation hole penetrates through the body; the component comprises a signal transmission electrode; the heat dissipation assembly comprises a first heat dissipation piece and a heat dissipation substrate, wherein the first heat dissipation piece is positioned in the heat dissipation hole; the signal transmission electrode is connected with the heat dissipation substrate in an insulating way through the first heat dissipation piece. The material of the first heat dissipation piece is carbon nano tube, graphene and other materials with high heat conductivity. Therefore, the signal transmission electrode can be in direct contact with the carbon nano tube with high heat conductivity and the like, the defect that heat dissipation is poor due to poor heat conduction of the substrate is avoided, and the influence of the electric conduction performance of the carbon nano tube on the electric performance of the component can be avoided through the insulating connection. The chip has excellent heat dissipation performance and excellent electrical performance.

Description

Chip, preparation method thereof and electronic equipment

Technical Field

The embodiment of the application relates to the field of electronic equipment, in particular to a chip, a preparation method thereof and electronic equipment.

Background

The heat dissipation performance of the chip has a direct effect on the performance of the chip, and taking a high electron mobility transistor (High Electron Mobility Transistor, HEMT) device as an example, poor heat dissipation may cause the following effects: 1) The schottky contact degrades, lowering the barrier height, resulting in increased gate leakage current and device failure. 2) The temperature is too high, the energy of the carriers increases, the carriers more easily cross the barrier layer, and the gate leakage current increases. 3) The temperature is increased, phonon scattering received by two-dimensional electron gas (2-DEG) in a channel is increased, mobility of the 2-DEG is rapidly reduced, output current of a device is also rapidly reduced, output power of a power device is affected, and further degradation of radio frequency and microwave performance of the device is caused. It can be seen that the heat dissipation performance of a chip is an important performance to consider in chip design or fabrication.

Fig. 1a to 1d are schematic structural views of different chips in the prior art, please refer to fig. 1a to 1d, and arrows in fig. 1a to 1d represent heat conduction directions. The chip 01 comprises a body 001 and a heat dissipation substrate 003, wherein the body 001 comprises a transistor 002, the transistor 002 is positioned on the surface of the body 001, and the heat dissipation substrate 003 is positioned on the surface of the body 001 away from the transistor 002.

In fig. 1a, a body 001 is provided with a through hole 005, a heat sink 004 is positioned in the through hole 005, and a ground electrode (source) of the transistor 002 is connected to the heat sink 004. Heat generated in operation of the chip 01 is transferred to the heat dissipation substrate 003 through the heat sink 004 and then dissipated to the outside of the device. In general, the material of the heat sink 004 is a metal with good heat conduction and electrical conductivity such as Cu or Ag, and in order to prevent the metal from diffusing into the body 001, the inner wall of the through hole 005 is provided with SiO, for example ₂ An insulating liner made of SiNx and the like. The heat dissipation performance of the chip 01 depends on the thermal conductivity of the heat sink, for example, 386W/mK of Cu, and is limited in its heat conduction capacity by heat conduction only through the heat sink 004 connected to the ground electrode.

In fig. 1b, the heat in transistor 002 is directed longitudinally through body 001 to heat spreading substrate 003. The heat dissipation performance thereof is directly related to the thermal conductivity of the body 001, and the thermal conductivity of the Si material at normal temperature and pressure is 148W/mK, and furthermore, in the example where the body 001 is composed of a substrate and an epitaxial layer, the heat dissipation performance of the chip 01 is related to the difference in thermal expansion coefficient between the substrate and the epitaxial layer. For example, si differs from GaN by 56% in thermal expansion coefficient, which is disadvantageous for heat dissipation.

In fig. 1c, heat in the transistor 002 is dissipated laterally through the active region to the inactive region, and a heat dissipation medium is usually deposited between the active region and the inactive region, which increases manufacturing cost, and the chip is small in size and the heat dissipation medium is not small in size.

In fig. 1d, the heat in the transistor 002 is transferred longitudinally by air, which is not suitable for the packaged device, and requires a larger contact area with air, and the heat dissipation performance is not good.

Therefore, the application aims to improve the heat radiation capability of the chip and solve the problem of poor radio frequency performance of the chip caused by poor heat radiation capability.

Disclosure of Invention

The embodiment of the application provides a chip, a preparation method thereof and electronic equipment, and solves the problem of poor heat dissipation capacity of the chip.

In order to achieve the above purpose, the present application adopts the following technical scheme:

in a first aspect of the present application, a chip is provided, the chip including a body and a heat dissipating assembly; the body has opposite first and second surfaces; the body comprises components and a plurality of radiating holes which are distributed at intervals; the heat dissipation hole penetrates from the first surface to the second surface; the component is positioned on the first surface; the component comprises a signal transmission electrode; the heat dissipation assembly comprises a first heat dissipation piece and a heat dissipation substrate, wherein the first heat dissipation piece is positioned in the heat dissipation hole; the heat dissipation substrate is positioned on the second surface; the signal transmission electrode is connected with the heat dissipation substrate in an insulating way through the first heat dissipation piece. Thus, the heat on the signal transmission electrode can be transmitted to the heat dissipation substrate through the first heat dissipation element, and the heat dissipation performance of the heat dissipation substrate is related to the heat conductivity of the first heat dissipation element and the heat dissipation substrate. Compared with the prior art that heat on the signal transmission electrode is transmitted to the heat dissipation base through the substrate (Si or GaN, etc.), the heat dissipation assembly provided by the application has better heat dissipation performance. Providing excellent heat dissipation capability for the chip in the working state.

With reference to the first aspect, in some realizable modes, an opening of the heat dissipation hole on the first surface is covered by the signal transmission electrode. Therefore, the heat transfer distance between the signal transmission electrode and the heat dissipation base is the same as the length of the heat dissipation hole in the substrate, so that the length of a heat dissipation path can be shortened, and the heat dissipation effect can be improved.

With reference to the first aspect, in some realizable manners, a material of the first heat dissipation element is an insulating material. Therefore, the first heat dissipation piece dissipates heat for the signal transmission electrode, and meanwhile, charges in the signal transmission electrode can hardly pass through the first heat dissipation piece, so that the heat dissipation component is prevented from affecting the electrical performance of the component.

With reference to the first aspect, in some realizable modes, the material of the heat dissipation substrate is an insulating material. Therefore, the heat dissipation component dissipates heat for the signal transmission electrode, and the heat dissipation substrate prevents charges on the signal transmission electrode from overflowing to the heat dissipation substrate, so that the heat dissipation component is prevented from affecting the electrical performance of the component.

With reference to the first aspect, in some realizable manners, the material of the heat dissipation substrate and the material of the first heat dissipation element are both conductive materials, and the heat dissipation assembly further includes: and the insulating part is used for connecting the signal transmission electrode with the first heat dissipation piece or connecting the first heat dissipation piece with the heat dissipation substrate through the insulating part. The insulation prevents charges on the signal transmission electrodes from overflowing to the heat dissipation substrate, and the first heat dissipation member and the heat dissipation substrate can be made of materials with low electric conductivity, so that the selectable range of the materials of the first heat dissipation member and the heat dissipation substrate is increased, for example, materials with high heat conductivity and high electric conductivity can be selected. Can provide excellent heat dissipation performance for the chip.

With reference to the first aspect, in some realizable manners, the insulating portion is located in the heat dissipating hole. Therefore, the section of the insulating part is the same as that of the radiating hole, and the insulating part with smaller volume can be arranged to realize the insulation between the radiating substrate and the signal transmission electrode. Accordingly, the first heat dissipation element and the heat dissipation substrate are larger in size, and heat transfer efficiency is improved.

With reference to the first aspect, in some realizable manners, the insulating portion is located on a surface of the heat dissipation substrate near the first heat dissipation element. Therefore, the shape and size of the insulating part are less in limiting factors, the preparation cost of the insulating part is low, the insulating part does not penetrate through the heat dissipation substrate, heat transfer on the heat dissipation substrate is more continuous, the heat conduction rate on the heat dissipation substrate is faster, and the heat dissipation performance of the chip is improved.

With reference to the first aspect, in some realizable modes, the heat dissipation substrate further includes a mounting hole in communication with the through hole, and the insulating portion is located in the mounting hole. Therefore, the insulation part can realize insulation between the heat dissipation substrate and the signal transmission electrode, and the insulation part can be prepared after the heat dissipation substrate is prepared, and the body can be free from masking, so that the preparation cost is reduced.

With reference to the first aspect, in some realizable modes, the electrical conductivity of the first heat dissipation element satisfies: greater than or equal to 1X 10 ⁶ S/m. Thereby, the first heat sink may have excellent electrical conductivity.

With reference to the first aspect, in some realizable modes, the material of the first heat dissipation element includes at least one of a carbon material and a metal. Thus, both carbon materials and metals have excellent thermal conductivity, which can provide excellent heat dissipation performance for components.

With reference to the first aspect, in some realizable forms, the carbon material includes at least one of carbon nanotubes, graphene, graphite, pitch carbon fiber, and polyacrylonitrile-based carbon fiber. Thus, the excellent heat conduction property of the carbon material enables the chip to have excellent heat dissipation.

With reference to the first aspect, in some realizable modes, the first heat dissipation element includes a metal portion and a carbon material supported on a surface of the metal portion. Therefore, the carbon material with excellent heat dissipation and light weight is combined with the metal part with excellent heat dissipation and good supporting performance, so that the heat dissipation performance of the first heat dissipation piece is excellent.

With reference to the first aspect, in some realizable modes, the thermal conductivity of the first heat dissipation element satisfies: greater than or equal to 400 W.m ^-1 ·K ^-1 . Thereby, the first heat dissipation member with high heat conductivity dissipates heatThe thermal conductivity of the component is higher, and excellent heat dissipation is provided for the chip.

With reference to the first aspect, in some realizable modes, the thermal conductivity of the insulating portion satisfies: greater than or equal to 200 W.m ^-1 ·K ^-1 . Therefore, the insulating part can insulate the heat radiating substrate from the signal transmission electrode, and the heat conductivity of the heat radiating component can be improved due to good heat conductivity, in other words, the insulating part can realize both insulation and heat conduction, and the heat conducting property of the heat radiating component can be further improved.

With reference to the first aspect, in some realizable forms, the material of the insulating portion includes diamond. Thus, diamond has excellent insulating properties, and the excellent heat conductive properties of diamond can give the insulating portion excellent heat dissipation capability.

With reference to the first aspect, in some realizable manners, the chip further includes: a ground plate connected to the heat dissipation substrate; the component also comprises a grounding electrode; the heat dissipation assembly further comprises a second heat dissipation piece positioned in the heat dissipation hole, and the grounding electrode is electrically connected with the grounding plate through the second heat dissipation piece. Therefore, the second heat dissipation piece is electrically connected with the grounding electrode and the grounding plate, and better heat dissipation capacity is provided, so that the heat dissipation capacity of the heat dissipation assembly is further improved.

With reference to the first aspect, in some realizable forms, the body includes a substrate and an epitaxial layer; an epitaxial layer formed on the substrate; the signal transmission electrode is formed on a side of the epitaxial layer facing away from the substrate. Thus, the epitaxial layer and the substrate also have the effect of indirectly transferring heat to the signal transmission electrode. Improving the heat dissipation capability.

A second aspect of the present application provides an electronic device comprising a printed circuit board and any one of the chips provided in the first aspect above; wherein, the chip is electrically connected with the printed circuit board. Therefore, the excellent heat dissipation performance of the chip lays a foundation for the normal operation of the electronic equipment.

Drawings

Fig. 1a is a schematic structural diagram of a chip in the prior art.

Fig. 1b is a schematic structural diagram of another chip in the prior art.

Fig. 1c is a schematic structural diagram of another chip in the prior art.

Fig. 1d is a schematic structural diagram of another chip in the prior art.

Fig. 2 is a schematic structural diagram of an electronic device provided in the present application.

Fig. 3a is a perspective view of a chip according to an embodiment of the present application.

Fig. 3b is a perspective view of another chip provided in an embodiment of the present application.

Fig. 3c is a perspective view of yet another chip provided in an embodiment of the present application.

Fig. 4a is a schematic diagram illustrating an internal structure of a chip according to an example of the present application.

Fig. 4b is a schematic diagram of an internal structure of a chip according to example two of the present application.

Fig. 4c is a schematic diagram of the internal structure of the chip provided in example three of the present application.

Fig. 4d is a schematic diagram of an internal structure of a chip according to example four of the present application.

Fig. 4e is a schematic diagram of an internal structure of a chip provided in example five of the present application.

Fig. 4f is a schematic diagram of an internal structure of a chip according to an example six of the present application.

Fig. 4g is a schematic diagram of an internal structure of a chip according to example seven of the present application.

Fig. 5 is a schematic diagram of an internal structure of a chip according to an example eight of the present application.

Fig. 6a is a schematic diagram of an internal structure of a chip provided in example nine of the present application.

Fig. 6b is a schematic diagram of the internal structure of the chip provided in example ten of the present application.

Fig. 6c is a schematic diagram of an internal structure of a chip provided in an example eleven of the present application.

Fig. 7 is a schematic diagram of an internal structure of a chip according to an example twelve of the present application.

Fig. 8 is a schematic structural diagram of a chip according to an example thirteen of the present application.

Reference numerals illustrate: 01-chip; 002-transistors; 003-heat sink base; 004-heat sink; 005-through hole; 10-an electronic device; 11-a housing; 12-a printed circuit board; 100-chip; 101-mounting holes; 110-body; 111-a first surface; 112-a second surface; 113-heat dissipation holes; 114-a substrate; 115-an epitaxial layer; 120-a heat sink assembly; 121-a first heat sink; 1211-copper foil; 1212-graphene; 122-a heat-dissipating substrate; 123-insulating part; 124-a second heat sink; 130-active devices; 131-a ground electrode; 132-signal input electrode; 133-signal output electrodes; 140-passive devices; 150-ground plate.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the present application more apparent, the present application will be described in further detail with reference to the accompanying drawings.

Hereinafter, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", etc. may explicitly or implicitly include one or more such feature. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.

Furthermore, in this application, directional terms "upper", "lower", etc. are defined with respect to the orientation in which the components are schematically disposed in the drawings, and it should be understood that these directional terms are relative concepts, which are used for description and clarity with respect thereto, and which may be varied accordingly with respect to the orientation in which the components are disposed in the drawings.

Embodiments of the present application provide an electronic device, which may be, for example, a mobile phone (mobile phone), a tablet computer (pad), a personal digital assistant (personal digital assistant, PDA), a television, an intelligent wearable product (e.g., a smart watch, a smart bracelet), a Virtual Reality (VR) terminal device, an augmented reality (augmented reality, AR) terminal device, a rechargeable household small-sized appliance (e.g., a soymilk machine, a floor sweeping robot), an unmanned plane, a radar, an aerospace device, a vehicle-mounted device, and other different types of user devices or terminal devices, and the specific forms of the electronic device are not particularly limited in the embodiments of the present application. For convenience of explanation, an electronic device is taken as an example of a mobile phone.

Fig. 2 is a schematic structural diagram of the electronic device 10 provided in the present application, and as shown in fig. 2, the electronic device 10 includes a housing 11 and a printed circuit board (printed circuit boards, PCB) 12. The printed circuit board 12 is located within the housing 11.

The electronic device 10 may further include a chip 100 disposed on the printed circuit board 12, where the printed circuit board 12 is configured to carry the chip 100, and the printed circuit board 12 is electrically connected to the chip 100.

When the electronic device 10 is in operation, the chip 100 generates a large amount of heat, and if the heat dissipation performance of the chip 100 is poor, the working efficiency of the chip 100 is lost, which affects the use of the electronic device 10. The weight may affect the reliability of the electrical performance of the chip 100, reducing the service life of the electronic device 10.

Thus, the embodiments of the present application provide a chip 100, and the chip 100 has good heat dissipation performance, and can improve the above-mentioned problems.

Fig. 3a is a perspective view of a chip 100 according to an embodiment of the present application, referring to fig. 3a, the chip 100 includes a body 110 and a heat dissipation assembly 120. The heat dissipation assembly 120 is connected with the body 110.

The body 110 has a first surface 111 and a second surface 112 disposed opposite to each other.

The structure of the body 110 is not limited in this application, in this embodiment, the body 110 includes a substrate 114 and an epitaxial layer 115 stacked together, the first surface 111 is a surface of the epitaxial layer 115 away from the substrate 114, and the second surface 112 is a surface of the substrate 114 away from the epitaxial layer 115.

It should be noted that fig. 3a is merely an example of a structure, and is not limited to the dimensions between the components, for example, the thickness relationship between epitaxial layer 115 and substrate 114 is not limited.

The material of the substrate 114 is not limited in this application, for example, the material of the substrate 114 is Si, siC, al ₂ O ₃ Any one of GaN, gaAs and diamond.

The material of the epitaxial layer 115 is not limited in this application, and for example, the material of the epitaxial layer 115 may be GaN.

As shown in fig. 3a, the body 110 further includes a signal transmission electrode, where the signal transmission electrode is located on the first surface 111.

The structure of the signal transmission electrode is not limited in this application, and is set according to the function of the chip 100. For example, the signal transfer electrode may be a signal transfer electrode of an active device or a signal transfer electrode of a passive device.

The present application does not limit the structure of the active device and the passive device, for example, the active device is a transistor or a transistor, and the passive device is a resistor or a capacitor, etc. In fig. 3a, an active device 130 is illustrated as a transistor.

The active device 130 includes a ground electrode 131 and a signal transmission electrode including a signal input electrode 132 and a signal output electrode 133. The structure of the transistor is not limited in this application, and may be, for example, a bipolar transistor (bipolar junction transistor, abbreviated as BJT) and a field effect transistor (Field Effect Transistor, abbreviated as FET).

In an embodiment in which the transistor is a bipolar transistor (BJT), the ground electrode 131 may be an Emitter (Emitter), a Base (Base), or a Collector (Collector). Which is arranged according to the manner of use of the bipolar transistor.

In an embodiment in which the transistor is a Field Effect Transistor (FET), the three poles of the Field Effect Transistor (FET) are the Source (Source), gate (Gate) and Drain (Drain), respectively. The source is a ground electrode 131. The gate is a signal input electrode 132, and the drain is a signal output electrode 133. Alternatively, the drain electrode is a signal input electrode 132, and the gate electrode is a signal output electrode 133.

The type of Field Effect Transistor (FET) is not limited, and may be, for example, a high electron mobility transistor (High electron mobility transistor, HEMT for short), a metal-oxide-semiconductor field-effect transistor, MOSFET for short, a metal-insulator-semiconductor field-effect transistor, MISFET for short, or a double hetero-structure FET for short(double heterostructure field-effect transistor, DHFET), junction-gate field-effect transistor, JFET, metal-semiconductor field-effect transistor, MESFET, or MISFET Metal Insulator Semiconductor Heterostructure Field Effect Transistor, abbreviated as MISFET), and the like.

As described above, the structure of the epitaxial layer 115 is not limited in the present application, and, taking a High Electron Mobility Transistor (HEMT) as an example, the epitaxial layer 115 includes an AlN layer, a GaN layer, and an AlGaN layer, which are sequentially stacked in a direction away from the substrate 114.

When the chip 100 is in an operation state, a great amount of heat is generated by the components, if the heat dissipation performance of the chip 100 is poor, the output power of the components is reduced due to light weight, and the electrical performance of the source device is unreliable due to heavy weight. Therefore, the heat dissipation assembly 120 is required to dissipate heat for the components.

Referring to fig. 3a again, in this application, the body 110 further includes a plurality of heat dissipation holes 113 distributed at intervals, and the heat dissipation holes 113 penetrate through the substrate 114 and the epitaxial layer 115, in other words, opposite ends of the heat dissipation holes 113 are located on the first surface 111 and the second surface 112, respectively.

The heat dissipation assembly 120 includes a first heat dissipation member 121 and a heat dissipation substrate 122. The first heat dissipation element 121 is located in the heat dissipation hole 113, and the heat dissipation substrate 122 is located on the second surface 112.

The signal transmission electrode is connected with the heat dissipation substrate 122 through the first heat dissipation member 121 in an insulating manner.

The number of signal transmission electrodes connected to the first heat sink 121 is not limited. For example, at least one of the signal output electrode 133 and the signal input electrode 132 is connected to the first heat sink 121.

As shown in fig. 3a, the heat dissipation substrate 122 is connected with the signal input electrode 132 through the first heat dissipation member 121 in an insulating manner, and the heat dissipation substrate 122 is connected with the signal output electrode 133 through the first heat dissipation member 121 in an insulating manner. As shown in fig. 3b, the heat dissipation substrate 122 is connected with the signal input electrode 132 through the first heat dissipation member 121 in an insulating manner. As shown in fig. 3c, the heat dissipation substrate 122 is connected with the signal output electrode 133 through the first heat dissipation member 121 in an insulating manner.

The positional relationship between the heat dissipation hole 113 and the signal transmission electrode is not limited in the present application. As shown in fig. 3a, the signal input electrode 132 covers the opening of the heat dissipation hole 113 on the first surface 111. The signal output electrode 133 covers the opening of the heat dissipation hole 113 at the first surface 111.

In other embodiments of the present application, the opening of the heat dissipation hole 113 at the first surface 111 may not be covered by the signal input electrode 132 or the signal output electrode 133, for example, the first heat dissipation member 121 is connected to the signal input electrode 132 or the signal output electrode 133 through other heat dissipation members.

Therefore, compared with the heat transfer to the heat dissipation substrate through the substrate (Si or GaN, etc.) in fig. 1a to 1d, the heat dissipation component 120 of the present application has better thermal conductivity and provides excellent heat dissipation capability for the signal transmission electrode in the working state. Further, in the embodiment in which the signal output electrode 133 and the signal input electrode 132 are both connected to the first heat sink 121, the heat conductivity is increased, and at the same time, the contact area between the heat sink 120 and the active device 130 is increased, so that the heat dissipation capability is further improved, and the heat dissipation performance of the chip 100 is increased.

The number of the first heat dissipation members 121 connected to the same signal transmission electrode is not limited in this application, and for example, in this embodiment, the signal output electrode 133 is connected to one first heat dissipation member 121. In other embodiments of the present application, the signal output electrode 133 may be connected to two, three, or more first heat dissipation members 121. Similarly, the signal input electrode 132 may be connected to one, two, three or more first heat dissipation elements 121.

It should be noted that the insulating connection is not limited to have no electron flowing therethrough, for example, the number of electrons flowing from the signal output electrode 133 or the signal input electrode 132, through the first heat sink 121, to the heat sink 122 is small, for example, the number of charges flowing to the heat sink 122 per meter is less than or equal to 3×10 at room temperature (25 ℃) ^-4 Siemens (S).

The implementation manner of insulating connection of the heat dissipation substrate 122 with the signal transmission electrode through the first heat dissipation member 121 is not limited in the present application.

For example, the material of the heat dissipation substrate 122 is an insulating material. Alternatively, the material of the first heat sink 121 is an insulating material. In this way, insulation between the heat dissipation substrate 122 and the signal transmission electrode can be achieved.

The heat conductivity is as follows: taking two parallel planes 1 m apart and 1 square meter in area perpendicular to the direction of conduction inside the object, if the two planes differ in temperature by 1K, the heat conducted from one plane to the other within 1 second is defined as the thermal conductivity of the substance in Watts/m Kelvin, i.e., W.m ^-1 ·K ^-1 。

Alternatively, in an embodiment in which the heat dissipation substrate 122 and the first heat dissipation member 121 are both made of conductive materials, as shown in fig. 3a, the heat dissipation assembly 120 further includes an insulating portion 123, and insulation between the heat dissipation substrate 122 and the signal transmission electrode is achieved by the insulating portion 123.

In general, in an embodiment in which the heat dissipating member 120 includes the insulating portion 123, the first heat dissipating member 121 and the heat dissipating substrate 122 may not be made of a material having a small electrical conductivity, the factor limiting the selection of the first heat dissipating member 121 and the heat dissipating substrate 122 may be reduced, and the selectable range of the materials of the first heat dissipating member 121 and the heat dissipating substrate 122 may be increased, for example, a material having a high thermal conductivity and a high electrical conductivity may be selected.

As such, the first heat sink 121 and the heat sink base 122 have numerous choices, and the first heat sink 121 and the heat sink base 122 have excellent thermal conductivity, which can provide excellent heat dissipation performance to the chip 100.

Illustratively, in embodiments where the heat dissipating assembly 120 includes the insulating portion 123, the electrical conductivity of the first heat dissipating member 121 satisfies: greater than or equal to 1X 10 ⁶ S/m. Thus, the first heat sink 121 has excellent heat dissipation and excellent heat conduction.

For example, the material of the first heat sink 121 includes at least one of a carbon material and a metal. Carbon materials and metals have excellent thermal conductivity. The temperature on the active device 130 can be quickly transferred to the first heat sink 121.

Illustratively, the foregoing carbon material includes at least one of carbon nanotubes, graphene, graphite, pitch carbon fibers, and polyacrylonitrile-based carbon fibers. The aforementioned carbon material has a high thermal conductivity, so that the first heat sink 121 has an excellent thermal conductivity.

The kind of the carbon nanotubes is not limited in the present application, and for example, single-walled carbon nanotubes (SWCNT) or Multi-walled carbon nanotubes (Multi-walled carbon nanotube, MWCNT) may be used.

The number of carbon nanotubes in the heat dissipation hole 113 is not limited, and for example, the number of carbon nanotubes in one heat dissipation hole 113 may be one, two or more.

The kind of the foregoing metal is also not limited in the present application, and for example, the metal includes Cu, ag. Cu and Ag have excellent thermal conductivity, so that the first heat sink 121 has excellent thermal conductivity.

The material of the first heat sink 121 may include only a carbon material, may include only a metal, and may include both a carbon material and a metal material. In some embodiments, the first heat sink 121 may also include other materials having good thermal conductivity.

In the embodiment in which the first heat sink 121 includes a plurality of materials, the interrelationship between the plurality of materials is not limited. Illustratively, the first heat sink 121 includes a metal portion and a carbon material supported on a surface of the metal portion.

The shape and material of the metal part are not limited in the present application.

For example, the first heat sink 121 includes a copper foil and graphene supported on the surface of the copper foil. Because the graphene thermal conductivity has anisotropy, for single-layer graphene, the thermal conductivity of the fracture surface of the single-layer graphene is lower<10W·m ^-1 ·K ^-1 ) The thermal conductivity of the outer surface is high (approximately 5300 W.m ^-1 ·K ^-1 ). In this way, the signal output electrode 133 and the heat dissipation substrate 122 are both in contact with the same surface of graphene, so that anisotropy of thermal conductivity of graphene can be fully utilized, thereby improving the first dissipationHeat dissipation performance of the heat member 121.

The formation manner of the first heat sink 121 is not limited in the present application, and for example, the first heat sink 121 that has been prepared and molded may be filled into the heat dissipation hole 113. Alternatively, the raw materials of the first heat sink 121 are placed in the heat sink 113, and then the reaction conditions are reached in the heat sink 113, so that the raw materials react to generate the first heat sink 121.

Taking the material of the first heat sink 121 as a carbon nanotube as an example, the carbon nanotube may be filled into the heat sink 113. Alternatively, a catalyst (e.g., a metal or alloy such as Fe, co, ni, etc.) is placed in the heat dissipation holes 113, and then the carbon nanotubes are deposited by a chemical vapor deposition (chemical vapour deposition, CVD) process.

The material selection of the heat dissipation substrate 122 may refer to the material selection of the first heat dissipation element 121, which is not described herein.

The material of the insulating portion 123 is not limited in the present application, and the electrical conductivity of the insulating portion 123 is, illustratively, 3×10 or less ^-4 S/m, and the thermal conductivity is more than or equal to 200 W.m ^-1 ·K ^-1 . The insulating portion 123 satisfying the aforementioned electric conductivity and thermal conductivity has good insulating properties while having good thermal conductivity. The signal input electrode 132 or the signal output electrode 133 may be insulated from the heat dissipation substrate 122 and also provide good heat dissipation thereto.

Illustratively, the material of the insulating portion 123 includes diamond, and the high thermal conductivity and low electrical conductivity of diamond provide the insulating portion 123 with good insulating properties while also providing good thermal conductivity.

The diamond is not limited to pure diamond, and may contain an impurity element such as Si, mg, al, ca, mn, cu, ni, or may be diamond doped with an element such as Cu or Ag according to performance requirements.

Further, the present application does not limit the position of the insulating portion 123. For example, as shown in fig. 4a to 4g, the insulating portion 123 is located in the mounting hole 101 of the heat dissipation substrate 122, and as shown in fig. 5, the insulating portion 123 is located on the surface of the heat dissipation substrate 122 close to the first heat dissipation element 121. As shown in fig. 6a to 6c, the insulating portion 123 is located in the heat dissipation hole 113.

Typically, the ground electrode 131 of the chip 100 needs to be grounded during use.

Referring again to fig. 3 a-3 c, in some embodiments of the present application, the chip 100 further includes a ground plate 150, and the ground electrode 131 is electrically connected to the ground plate 150.

The connection manner between the ground plate 150 and the heat dissipation substrate 122 is not limited, and the ground plate 150 is illustratively connected to the heat dissipation substrate 122, for example, the ground plate 150 is integrally disposed with the heat dissipation substrate 122. In this way, the heat dissipation substrate 122 combines the functions of heat dissipation and grounding, so that the volume of the chip 100 can be reduced.

Referring to fig. 3a to 3c again, in the present embodiment, the heat dissipating assembly 120 further includes a second heat dissipating member 124, the second heat dissipating member 124 is located in the heat dissipating hole 113, and the heat dissipating substrate 122 is connected to the ground electrode 131 through the second heat dissipating member 124. In this way, the heat on the ground electrode 131 can be transferred to the heat dissipation substrate 122 through the second heat dissipation element 124, so as to further increase the contact area between the heat dissipation assembly 120 and the active device 130, and improve the heat dissipation performance.

Illustratively, the thermal conductivity of the second heat sink 124 is greater than or equal to 400W m ^-1 ·K ^-1 Conductivity of 1 x 10 or more ⁶ S/m. As such, the second heat sink 124 may provide excellent heat and electrical conductivity to the ground electrode 131.

In some embodiments, the heat dissipation substrate 122 and the ground plate 150 are independent, for example, the ground plate 150 is located on the first surface 111 of the body 110, and the ground electrode 131 may also be connected to the heat dissipation substrate 122 through the second heat dissipation member 124, so that the second heat dissipation member 124 may transfer the heat of the ground electrode 131 to the heat dissipation substrate 122.

In the embodiment in which the heat dissipation substrate 122 and the ground plate 150 are independent from each other, the ground electrode 131 may be electrically connected to the heat dissipation substrate 122 through the second heat dissipation member 124, or the ground electrode 131 may be electrically connected to the heat dissipation substrate 122 through the second heat dissipation member 124, and the ground electrode 131 may be electrically connected to the heat dissipation substrate 122 through the second heat dissipation member 124. In this way, the second heat sink 124 may also transfer heat from the ground electrode 131 to the heat sink base 122.

Thus, the thermal conductivity of the second heat sink 124 is greater than or equal to 400 W.m ^-1 ·K ^-1 The conductivity is not limited.

Accordingly, the material selection of the second heat dissipation element 124 can be referred to as the material selection of the first heat dissipation element 121, which is not described herein.

The number of the second heat dissipation elements 124 is not limited in this application, and for example, the second heat dissipation elements 124 may be one, two, three or more.

It should be noted that, in the embodiment where the heat dissipation substrate 122 and the ground plate 150 are independent from each other, the second heat dissipation element 124 may not be disposed. In other words, the ground electrode 131 and the heat dissipation substrate 122 may not be connected through the second heat dissipation member 124, and the ground electrode 131 and the heat dissipation substrate 122 may be connected through the body 110.

In the heat dissipating assembly 120 of the present application, the material of the first heat dissipating member 121, the material of the insulating portion 123, the material of the second heat dissipating member 124, and the material of the heat dissipating substrate 122 are selected independently, and the four materials are not related, but may be arranged and combined according to their respective choices.

Hereinafter, different structures of the heat dissipation assembly 120 of the present application including the insulating part 123 are exemplarily described. Illustratively, as shown in fig. 4 a-4 g, the insulating portion 123 is located within the mounting hole 101 of the heat dissipating substrate 122. As shown in fig. 5, the insulating portion 123 is located on a surface of the heat dissipation substrate 122 close to the first heat dissipation element 121. As shown in fig. 6a to 6c, the insulating portion 123 may be located in the heat dissipation hole 113.

Fig. 4a is a schematic diagram illustrating an internal structure of a chip 100 according to an example of the present application. In an example, referring to fig. 4a, the heat dissipation substrate 122 has a mounting hole 101, an insulating portion 123 is located in the mounting hole 101, and the insulating portion 123 is connected to an inner wall of the mounting hole 101.

In example one, the first heat sink 121 is connected with the heat dissipation substrate 122 through the insulating part 123 in an insulating manner. The ground electrode 131 is electrically connected to the ground plate 150 through the second heat sink 124.

In the first example, the material of the first heat sink 121 is carbon nanotubes, the material of the second heat sink 124 is carbon nanotubes, the material of the heat dissipation substrate 122 is copper, and the material of the insulating portion 123 is diamond.

Simulation of the chip 100 shown in fig. 4a, extracting the parasitic inductance, parasitic resistance and parasitic capacitance parameters of the first heat sink 121, the result shows that: in the chip 100 shown in fig. 4a, the parasitic resistance of the first heat spreader 121 is 0.093 ohm (symbol Ω), the parasitic inductance of the first heat spreader 121 is 0.029 nano henry (symbol nH), and the parasitic capacitance of the first heat spreader 121 is 0.128 picofarad (symbol pf). In the embodiment where the first heat dissipation element 121 and the heat dissipation substrate 122 are made of conductive materials, the conductive effect of the first heat dissipation element 121 on the electrical performance of the chip 100 is small and negligible.

Fig. 4b is a schematic diagram of an internal structure of the chip 100 according to example two of the present application. The structure of the chip 100 provided in the second example is the same as that in the first example, and will not be described here again.

The second example differs from the first example in that the first heat sink 121 and the second heat sink 124 are different.

In example two, the first heat spreader 121 includes a copper foil 1211 and graphene 1212, the graphene 1212 being supported on the surface of the copper foil 1211.

In the second example, the copper foil 1211 is a curved sheet having a plurality of bent portions, and the copper foil 1211 and the graphene 1212 are stacked in the thickness direction of the graphene 1212.

In the second example, the second heat dissipation element 124 has the same structure as the first heat dissipation element 121, and will not be described here again.

Fig. 4c is a schematic diagram illustrating an internal structure of the chip 100 according to example three of the present application. The structure of the chip 100 provided in the third embodiment is the same as that in the first embodiment, and will not be described here again.

In example three, the material of the second heat sink 124 is carbon nanotubes. The structure of the first heat dissipation element 121 is the same as that in the second example, and will not be described here again.

Fig. 4d is a schematic diagram of the internal structure of the chip 100 according to example four of the present application. In the fourth example, the material of the first heat dissipation element 121 is graphene, and the rest of the structure of the chip 100 is the same as that in the first example, which is not described here again.

Fig. 4e is a schematic diagram of the internal structure of the chip 100 provided in example five of the present application. In the fifth example, the material of the second heat sink 124 is carbon nanotubes, and the material of the first heat sink 121 is graphite. The remaining structure of the chip 100 is the same as that of example one, and will not be described here again.

Fig. 4f is a schematic diagram illustrating an internal structure of the chip 100 according to the sixth embodiment of the present application. In the sixth example, the material of the second heat dissipation element 124 is Cu, the material of the first heat dissipation element 121 is the same as that of the second example, and the rest of the chip 100 is the same as that of the first example, which is not repeated here.

Fig. 4g is a schematic diagram of the internal structure of the chip 100 provided in example seven of the present application. In the seventh example, the material of the second heat sink 124 is Cu, and the material of the first heat sink 121 is pitch carbon fiber. The remaining structure of the chip 100 is the same as that of example one, and will not be described here again.

The first heat sink 121 and the second heat sink 124 shown in fig. 4a to 4g may provide an active device 130 with excellent heat dissipation performance. And as can be seen from fig. 4a to fig. 4g, the first heat sink 121 and the second heat sink 124 have more choices, and the shortage of part of the materials does not affect the cost of the chip 100.

In fig. 4a to 4g, the insulating portion 123 is located in the mounting hole 101 of the heat dissipation substrate 122. The mounting hole 101 penetrates the heat dissipation substrate 122, and in other embodiments, the mounting hole 101 may be a blind hole. For example, the insulating part 123 may be located on a surface of the heat dissipation substrate 122 disposed near the body 110.

Fig. 5 is a schematic diagram of the internal structure of the chip 100 provided in example eight of the present application. In example eight, the first heat sink 121 is connected to the heat dissipation substrate 122 through the insulating portion 123. The insulating portion 123 is located on a surface of the heat dissipation substrate 122 close to the first heat dissipation member 121.

In the eighth example, the structures of the insulating portion 123, the heat dissipating substrate 122, the body 110, the first heat dissipating member 121, and the second heat dissipating member 124 are any one of the first to seventh examples, and will not be described herein.

In example eight, in the case where the insulating portion 123 is satisfied to insulate the first heat sink 121 and the heat dissipating substrate 122, the size of the insulating portion 123 is not limited, for example, the insulating portion 123 may cover a partial area of the heat dissipating substrate 122 near the surface of the body 110, or the insulating portion 123 may cover the entire surface of the heat dissipating substrate 122 near the body 110.

In the eighth example, the insulating portion 123 does not penetrate the heat dissipation substrate 122, so that the heat transfer on the heat dissipation substrate 122 is more continuous, the heat transfer rate on the heat dissipation substrate 122 is faster, and the heat dissipation performance of the chip 100 is improved.

Fig. 6a is a schematic diagram illustrating an internal structure of a chip 100 according to an example nine of the present application. In example nine, insulating portion 123 is located within heat sink 113, and insulating portion 123 is located at an end of heat sink 113 that is proximate to active device 130.

In example nine, the signal output electrode 133 is connected to the first heat sink 121 through the insulating portion 123.

In the ninth embodiment, the structures of the insulating portion 123, the heat dissipating substrate 122, the body 110, the first heat dissipating member 121, and the second heat dissipating member 124 are any one of the first to seventh embodiments, and will not be described herein.

Fig. 6b is a schematic diagram of the internal structure of the chip 100 according to example ten of the present application. In example ten, the insulating portion 123 may be located within the heat dissipation hole 113. And the insulating portion 123 is located at one end of the heat dissipation hole 113 near the heat dissipation substrate 122.

In example ten, the first heat sink 121 is connected to the heat dissipation substrate 122 through the insulating part 123.

In the tenth embodiment, the structures of the insulating portion 123, the heat dissipating substrate 122, the body 110, the first heat dissipating member 121, and the second heat dissipating member 124 are any one of the first to seventh embodiments, and will not be described herein.

Fig. 6c is a schematic diagram of an internal structure of the chip 100 provided in example eleven of the present application. In example eleven, the insulating portion 123 may be located within the heat dissipation hole 113. The insulating portion 123 is located at a middle portion of the heat dissipation hole 113 along an extending direction of the heat dissipation hole 113.

The first heat sink 121 is connected to the heat dissipation substrate 122 through an insulating portion 123.

In the eleventh embodiment, the insulating portion 123, the heat dissipating substrate 122, the body 110, the first heat dissipating member 121, and the second heat dissipating member 124 are all described in any of the first to seventh embodiments, and are not described herein.

In the examples of fig. 6a to 6b, the insulating part 123 may prevent most of charges from flowing from the signal output electrode 133 to the heat dissipation substrate 122, ensuring normal electrical performance of the active device 130, and at the same time, the first heat dissipation member 121 and the insulating part 123 allow heat of the active device 130 to be rapidly transferred to the heat dissipation substrate 122, ensuring that the active device 130 is operated at an operating temperature.

The cross section of the insulating part 123 in the example of fig. 6a to 6b is the same as the cross section of the heat dissipation hole 113 as compared with the examples shown in fig. 4a to 4g and 5, and generally, the cross section of the insulating part 123 in the example of fig. 4a to 4g and 5 is slightly larger than the cross section of the heat dissipation hole 113 for a better insulating effect, so that material costs can be saved for the insulating part 123 which is more expensive. Further, in the embodiment in which the thermal conductivity of the insulating portion 123 is smaller than that of the first heat dissipation member 121 and the heat dissipation substrate 122, the smaller the volume of the insulating portion 123, the better the heat dissipation effect of the entire heat dissipation assembly 120.

In contrast, in the examples of fig. 6a to 6b, it is necessary to prepare the insulating portion 123 having a shape matching the heat dissipation hole 113 and refill it into the heat dissipation hole 113, or to re-react the raw material in which the insulating portion 123 is placed in the heat dissipation hole 113 to generate the insulating portion 123. As such, the manufacturing process and manufacturing cost of the insulating portion 123 in the examples of fig. 6a to 6b may be higher than those of the examples of fig. 4a to 4g and fig. 5.

In the embodiment of the present application, the heat dissipating component 120 may not be provided with the insulating portion 123, and the first heat dissipating member 121 is made of an insulating material.

For example, fig. 7 is a schematic diagram of an internal structure of a chip 100 according to an example twelve of the present application. In example twelve, the chip 100 is not provided with the insulating portion 123.

In example twelve, the material of the first heat sink 121 is diamond, and since diamond has excellent insulation properties, the signal output electrode 133 is connected to the heat sink base 122 through the first heat sink 121, and the first heat sink 121 of diamond material insulates the signal output electrode 133 from the heat sink base 122.

It is to be understood that in examples one to eleven, diamond may be used as the material of the first heat sink 121.

In other words, in the embodiment of the present application, the first heat dissipation element 121 is diamond, and the heat dissipation element 120 includes the insulating portion 123, which may be disposed in one chip 100 at the same time, or alternatively disposed, which do not collide.

In the example shown in fig. 7, the insulating portion 123 may not be provided, and a process of providing the insulating portion 123 may be saved, thereby saving a process cost.

It should be understood that, in the embodiment where the heat dissipation substrate 122 is made of an insulating material, the structure of the heat dissipation substrate is shown in fig. 7, the insulating material is shown in fig. 7, and the material selection of the first heat dissipation element 121 in the twelve examples is not limited.

In some embodiments of the present application, as shown in fig. 8, the chip 100 further includes a passive device 140.

Fig. 8 is a schematic structural diagram of a chip 100 according to an example thirteen of the present application. In the thirteenth example, the passive device 140 is electrically connected to the signal output electrode 133 or the signal input electrode 132.

The passive device 140 is insulated from the heat dissipation substrate 122 by the first heat sink 121.

The specific structure of the passive device 140 is not limited in this application, and for example, the passive device 140 includes a resistor, a capacitor, and the like.

In the thirteenth embodiment, please refer to the first to the twelfth embodiments together for the insulating connection between the passive device 140 and the heat dissipation substrate 122, which is not described herein again.

Referring to fig. 4a to 4g, fig. 5, fig. 6a to 6c, fig. 7 and fig. 8, only the first heat sink 121 connected to the signal output electrode 133 is illustrated in the above figures. It is to be understood that, in the embodiment where the signal input electrode 132 is connected to the heat dissipation substrate 122 through the first heat dissipation element 121, the connection manner of the signal input electrode 132 and the first heat dissipation element 121 may refer to any one of the above examples one to thirteenth, which is not described herein again.

Further, in some embodiments, the first heat dissipation element 121 connected to the signal output electrode 133 may be one or more, and it is understood that the structures of the plurality of first heat dissipation elements 121 connected to the signal output electrode 133 may be the same or different. The first heat sink 121 connected to the signal input electrode 132 is similar to the above, and will not be described again here.

It should be further noted that the number of active devices 130 and passive devices 140 in the chip 100 is not limited. Thus, in embodiments where the active device 130 has a plurality of active devices, the first heat sink 121 connected to different active devices 130 may or may not have the same structure, and the passive device 140 is the same.

The heat dissipation assembly 120 provided in the embodiments of the present application can provide the chip 100 with excellent heat dissipation performance. Compared with the scheme that the non-grounding electrode in the existing component can only transfer heat to the heat dissipation substrate through the substrate, the heat transfer is performed through the first heat dissipation piece 121 located in the heat dissipation hole 113 penetrating through the body 110, the heat conductivity of the first heat dissipation piece 121 is good, the heat transfer efficiency of the signal transmission electrode in the active component 130 is improved, and the heat dissipation performance of the chip 100 is effectively improved. Providing a good operating environment for the good electrical performance of the chip 100.

Accordingly, since the chip 100 provided in the embodiment of the present application has an excellent heat dissipation performance, the electronic device 10 provided in the embodiment of the present application has stable electrical performance. The foregoing is merely a specific embodiment of the present application, but the protection scope of the present application is not limited thereto, and any changes or substitutions within the technical scope of the present disclosure should be covered in the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A chip, wherein the chip comprises a body and a heat dissipation assembly;

the body has opposed first and second surfaces; the body comprises a signal transmission electrode and a plurality of heat dissipation holes which are distributed at intervals; the heat dissipation holes penetrate through the first surface to the second surface;

the signal transmission electrode is positioned on the first surface;

the heat dissipation assembly comprises a first heat dissipation piece and a heat dissipation substrate, and the first heat dissipation piece is positioned in the heat dissipation hole; the heat dissipation substrate is positioned on the second surface; the signal transmission electrode is connected with the heat dissipation substrate in an insulating way through the first heat dissipation piece.

2. The chip of claim 1, wherein an opening of the heat dissipation hole at the first surface is covered by the signal transmission electrode.

3. The chip of claim 1 or 2, wherein the material of the first heat sink is an insulating material.

4. A chip according to any one of claims 1-3, wherein the material of the heat-dissipating substrate is an insulating material.

5. The chip of claim 1 or 2, wherein the material of the heat dissipation substrate and the material of the first heat dissipation element are both conductive materials, the heat dissipation assembly further comprising: and the signal transmission electrode is connected with the first heat dissipation piece through the insulating part, and/or the first heat dissipation piece is connected with the heat dissipation substrate through the insulating part.

6. The chip of claim 5, wherein the insulating portion is located within the heat sink.

7. The chip of claim 5, wherein the insulating portion is located on a surface of the heat dissipation substrate adjacent to the first heat dissipation element.

8. The chip of claim 5, wherein the heat dissipating substrate further comprises a mounting hole in communication with the heat dissipating hole, the insulating portion being located within the mounting hole.

9. According to claimThe chip of any one of claims 5-8, wherein the electrical conductivity of the first heat sink satisfies: greater than or equal to 1X 10 ⁶ S/m。

10. The chip of claim 9, wherein the material of the first heat spreader comprises at least one of a carbon material and a metal.

11. The chip of claim 10, wherein the carbon material comprises at least one of carbon nanotubes, graphene, graphite, pitch carbon fibers, and polyacrylonitrile-based carbon fibers.

12. The chip of any one of claims 9-11, wherein the first heat spreader includes a metal portion and a carbon material supported on a surface of the metal portion.

13. The chip of any one of claims 5-12, wherein the thermal conductivity of the insulating portion satisfies: greater than or equal to 200 W.m ^-1 ·K ^-1 。

14. The chip of any one of claims 5-13, wherein the material of the insulating portion comprises diamond.

15. The chip of any one of claims 1-14, wherein the thermal conductivity of the first heat sink satisfies: greater than or equal to 400 W.m ^-1 ·K ^-1 。

16. The chip of any one of claims 1-15, wherein the chip further comprises: a ground plate connected to the heat dissipation substrate;

the component also comprises a grounding electrode;

the heat dissipation assembly further comprises a second heat dissipation piece positioned in the heat dissipation hole, and the grounding electrode is electrically connected with the grounding plate through the second heat dissipation piece.

17. The chip of any one of claims 1-16, wherein the body comprises:

a substrate;

an epitaxial layer formed on the substrate;

the signal transmission electrode is formed on the side of the epitaxial layer, which is away from the substrate.

18. An electronic device comprising a printed circuit board and a chip as claimed in any one of claims 1 to 17;

the chip is electrically connected with the printed circuit board.