JP2006093526A - Conductive thermally conductive sheet - Google Patents

Conductive thermally conductive sheet Download PDF

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JP2006093526A
JP2006093526A JP2004279061A JP2004279061A JP2006093526A JP 2006093526 A JP2006093526 A JP 2006093526A JP 2004279061 A JP2004279061 A JP 2004279061A JP 2004279061 A JP2004279061 A JP 2004279061A JP 2006093526 A JP2006093526 A JP 2006093526A
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heat
conductive
graphite sheet
sheet
heat conductive
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Hidefumi Sasaki
英文 佐々木
Masashi Senba
正志 船場
Kazuhiko Kubo
和彦 久保
Norihiro Kawamura
典裕 河村
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that the high-frequency characteristics of equipment can not be satisfied in the case of using a thermally conductive graphite sheet used as a heat radiation material for the heat radiation of a semiconductor device such as high-speed communication equipment since it has the resistance value of several Ω though the main component of the constituting material is carbon and it is conductive. <P>SOLUTION: By disposing slits passing through the thermally conductive graphite sheet to the thermally conductive graphite sheet of high thermal conductivity and a high orientation property and attaining the conductive thermally conductive sheet for which a conductor is disposed on the entire surface of the thermally conductive graphite sheet including the inner surfaces of the slits passing through, high thermal conductivity characteristics and low electric resistance value characteristics are provided and there are the effects of taking measures against heat and satisfying the high-frequency characteristics of electronic appliances and the high-speed communication equipment. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、電子機器・高速通信装置の放熱等に使用される熱伝導性グラファイトシートであり且つ、低電気抵抗値特性を有する導電性熱伝導シートに関するものである。   The present invention relates to a heat conductive graphite sheet used for heat dissipation of electronic devices and high-speed communication devices, and also relates to a conductive heat conductive sheet having low electric resistance characteristics.

従来、この種の熱伝導性シートとしては、図5に示すような構成を有していた。   Conventionally, this type of heat conductive sheet has a structure as shown in FIG.

図5は従来の熱伝導性シートの平面図、図6は熱伝導性シートの使用例の正面図である。   FIG. 5 is a plan view of a conventional heat conductive sheet, and FIG. 6 is a front view of a usage example of the heat conductive sheet.

図5において、熱伝導性シート6は、固定ネジ用切り欠き7を有し、厚さは0.05mmから0.2mm程度のものが一般的である。   In FIG. 5, the heat conductive sheet 6 has a fixing screw notch 7 and generally has a thickness of about 0.05 mm to 0.2 mm.

また、図6に示すように、この熱伝導性シート6を、接続用の端子11や金属基板10を有する半導体デバイス12と、放熱性金属基板8間に挟み込み固定ネジ9にて締め付け固定することにより放熱部材として使用されている。   In addition, as shown in FIG. 6, the thermally conductive sheet 6 is sandwiched between the semiconductor device 12 having the connection terminals 11 and the metal substrate 10 and the heat dissipating metal substrate 8 and fixed with a fixing screw 9. Is used as a heat dissipation member.

そして以上のような構成により、半導体デバイス12と、放熱性金属基板8とは熱的な接続が図られていると同時に電気的な接続が図られている。   With the above-described configuration, the semiconductor device 12 and the heat dissipating metal substrate 8 are thermally connected and at the same time are electrically connected.

なお、この出願の発明に関連する先行技術文献情報としては、例えば、特許文献1、特許文献2、特許文献3が知られている。
特開平10−229149号公報 特開平10−070350号公報 特開平5−235215号公報
As prior art document information related to the invention of this application, for example, Patent Document 1, Patent Document 2, and Patent Document 3 are known.
Japanese Patent Laid-Open No. 10-229149 JP-A-10-070350 JP-A-5-235215

近年の電子機器の小型化、高性能化が進むにつれて高密度に集積された半導体デバイスなどから発生する熱を効率良く放熱すると同時に、高速無線通信におけるFETの様に高周波数化が進み、図6の半導体デバイス12と放熱性金属基板8間をアースとして利用する為に、半導体デバイス12と放熱性金属基板8間の電気抵抗値として低い抵抗値であることが求められてきた。   As electronic devices have been downsized and improved in performance in recent years, heat generated from high-density integrated semiconductor devices and the like can be efficiently dissipated, and at the same time, the frequency can be increased like FETs in high-speed wireless communication. In order to use the space between the semiconductor device 12 and the heat-dissipating metal substrate 8 as a ground, it has been required to have a low resistance value as the electric resistance value between the semiconductor device 12 and the heat-dissipating metal substrate 8.

しかしながら、上記従来の構成では、熱伝導性グラファイトシート6は構成材料の主成分は炭素であり、導電性は有るが、数Ωの抵抗値を有している為に、半導体デバイスの高周波特性に不具合が生じるという課題があった。   However, in the above-described conventional configuration, the main component of the heat conductive graphite sheet 6 is carbon, which is conductive, but has a resistance value of several Ω. There was a problem that defects occurred.

また、より熱伝導性の良い熱伝導性グラファイトシートが求められている。   There is also a need for a thermally conductive graphite sheet with better thermal conductivity.

本発明は上記従来の課題を解決するもので、電子機器・高速無線通信装置内の半導体デバイスと放熱性金属基板間に挟み込み、半導体デバイスの熱を優れた熱伝導性のグラファイトシートを介して、放熱性金属基板や金属筐体へ放熱する場合において、高い熱伝導率を有する熱伝導性グラファイトシートの熱伝達、放熱特性を損なうこと無く、低い電気抵抗値を有し、電子機器・高速無線通信装置の高周波数特性を満足する導電性熱伝導シートを提供することを目的とするものである。   The present invention solves the above-mentioned conventional problems, sandwiched between a semiconductor device and a heat-dissipating metal substrate in an electronic device / high-speed wireless communication device, through a heat conductive graphite sheet excellent in heat of the semiconductor device, When dissipating heat to a heat-dissipating metal substrate or metal housing, it has a low electrical resistance value without impairing the heat transfer and heat dissipation characteristics of the heat-conductive graphite sheet with high thermal conductivity, and electronic equipment and high-speed wireless communication It is an object of the present invention to provide a conductive heat conductive sheet that satisfies the high frequency characteristics of the apparatus.

上記目的を達成するために本発明は、例えば熱伝導率が約700W/mKという高熱伝導率を有し結晶構造が高配向性の熱伝導性グラファイトシートに、熱伝導性グラファイトシートを貫通したスリットを配し、且つ、貫通したスリット内面を含む熱伝導性グラファイトシートの全面に導電体を配した構成の導電性熱伝導シートにすることにより、電子機器・高速無線通信装置内の半導体デバイスと放熱性金属基板間に挟み込んだ場合に、高い発熱をする半導体デバイスの熱を、高い熱伝導率にて導電性熱伝導シート全体に熱を伝達し、導電性熱伝導シートを介して放熱基板や筐体へ放熱すると共に、導電性熱伝導シートとの接触面に電気的にアース等の金属基板を有した半導体デバイスと放熱性金属基板や金属筐体間の抵抗値を、貫通したスリット内面を含む熱伝導性グラファイトシートの全面に配した導電体により、低くすることが可能となり、導電性熱伝導シートの熱伝達、放熱特性を損なうこと無く、低い電気抵抗値を有するため、電子機器・高速通信装置の高周波特性を満足するという作用効果が得られる。   In order to achieve the above object, the present invention provides, for example, a slit having a high thermal conductivity of about 700 W / mK and a crystal structure having a highly oriented crystal structure and a thermal conductive graphite sheet penetrating the thermal conductive graphite sheet. And a heat conductive sheet having a structure in which a conductor is disposed on the entire surface of the heat conductive graphite sheet including the inner surface of the slit that penetrates the semiconductor device in the electronic device / high-speed wireless communication device and dissipates heat. When sandwiched between conductive metal substrates, the heat of a semiconductor device that generates high heat is transferred to the entire conductive heat conductive sheet with high thermal conductivity, and the heat radiating substrate or housing is passed through the conductive heat conductive sheet. While radiating heat to the body, the resistance value between the semiconductor device having a metal substrate such as an electrical ground on the contact surface with the conductive heat conductive sheet and the heat radiating metal substrate or metal casing was penetrated. The conductor placed on the entire surface of the thermally conductive graphite sheet including the inner surface of the lit can be lowered, and has a low electrical resistance value without impairing the heat transfer and heat dissipation characteristics of the conductive heat conductive sheet. The effect of satisfying the high frequency characteristics of the device / high-speed communication device can be obtained.

また、熱伝導性グラファイトシートを貫通したスリットを、熱伝導性グラファイトシート表面の長手方向に配置することにより、電子機器・高速通信装置内の半導体デバイスと放熱性金属基板間に挟み込んだ場合に、高い発熱をする半導体デバイスの熱を、熱伝導性グラファイトシートを貫通したスリットにより、熱の伝達を阻害され難くし、高い熱伝導率にて導電性熱伝導シート全体に熱を効率良く伝達することが可能となり、導電性熱伝導シートを介して放熱性金属基板や筐体へ放熱するという作用効果が得られる。   In addition, by placing the slit that penetrates the heat conductive graphite sheet in the longitudinal direction of the surface of the heat conductive graphite sheet, when sandwiched between the semiconductor device in the electronic equipment / high-speed communication device and the heat dissipating metal substrate, The heat of semiconductor devices that generate high heat is not easily blocked by slits that penetrate the heat conductive graphite sheet, and heat is efficiently transferred to the entire conductive heat conductive sheet with high thermal conductivity. Thus, the effect of radiating heat to the heat dissipating metal substrate or the housing through the conductive heat conductive sheet can be obtained.

さらに、熱伝導性グラファイトシートを貫通したスリットを、中央部付近から周辺部に向かって放射状に配置することにより、電子機器・高速無線通信装置内の半導体デバイスと放熱性金属基板間に挟み込んだ場合に、局部的にヒートスポットを有して高い発熱をする半導体デバイスの熱を高い熱伝導率にて導電性熱伝導シート全体に熱を効率良く伝達することが可能となり、導電性熱伝導シートを介して放熱性金属基板や筐体へ放熱するという作用効果が得られる。   In addition, when slits that penetrate the heat conductive graphite sheet are arranged radially from the central part to the peripheral part, they are sandwiched between the semiconductor device in the electronic device / high-speed wireless communication device and the heat-dissipating metal substrate In addition, it is possible to efficiently transfer the heat of a semiconductor device having a heat spot locally and generating high heat to the entire conductive heat conductive sheet with high thermal conductivity. The effect of radiating heat to the heat dissipating metal substrate or the housing is obtained.

さらに、導電体として、Au、Ag、Cu、Niのうちのいずれか一つ、又はこれらの金属の複合体をスパッタ、蒸着、又は、鍍金により形成した導電性熱伝導グラファイトシートであり、これにより導電性熱伝導グラファイトシートを電子機器・高速通信装置内の半導体デバイスと放熱体間に挟み込んだ場合に、貫通したスリット内面を含む熱伝導性グラファイトシートの全面に配した低電気抵抗値の金属導電体により、導電性熱伝導シートとの接触面に電気的にアース等の端子電極を有した半導体デバイスと放熱性金属基板や金属筐体間の電気抵抗値をさらに低くすることが可能となり、熱伝導性グラファイトシートの熱伝達、放熱特性を損なうこと無く、電子機器・高速通信装置の高周波特性を満足するという作用効果が得られる。   Furthermore, as a conductor, any one of Au, Ag, Cu, Ni, or a composite of these metals is a conductive heat conductive graphite sheet formed by sputtering, vapor deposition, or plating. When conductive graphite sheet is sandwiched between semiconductor device and heat radiator in electronic equipment / high-speed communication device, metal conductivity with low electrical resistance value placed on the entire surface of the thermally conductive graphite sheet including the inner surface of the slit. The body makes it possible to further reduce the electrical resistance value between the semiconductor device having a terminal electrode such as an electrical ground on the contact surface with the conductive heat conductive sheet and the heat dissipating metal substrate or metal housing. The effect of satisfying the high frequency characteristics of the electronic device / high-speed communication device can be obtained without impairing the heat transfer and heat dissipation characteristics of the conductive graphite sheet.

本発明は、例えば熱伝導率が約700W/mKという高熱伝導率の高配向性の熱伝導性グラファイトシートに、熱伝導性グラファイトシートを貫通したスリットを配し、且つ、貫通したスリット内面を含む熱伝導性グラファイトシートの全面に導電体を配した導電性熱伝導シートであり、電子機器・高速無線通信装置内の半導体デバイスと放熱性金属基板間に挟み込んだ場合に、高い発熱をする半導体デバイスの熱を、高い熱伝導率にて導電性熱伝導シート全体に熱を伝達し、導電性熱伝導シートを介して放熱性金属基板や筐体へ放熱する熱対策が可能となると共に、放熱特性を損なうこと無く、低い電気抵抗値を有することにより、高速無線通信装置内などにおける高周波FET半導体デバイスの歪み特性の良化、増幅利得の増加、バイアス電圧−ドレイン電流特性の良化などにより、発振現象も無く、電子機器・高速無線通信装置の低周波数〜高周波数特性を満足できるという効果がある。   The present invention includes, for example, a slit that penetrates the thermally conductive graphite sheet on a highly oriented thermally conductive graphite sheet having a high thermal conductivity of about 700 W / mK, and includes an inner surface of the slit that penetrates. A conductive heat conductive sheet with a conductor placed on the entire surface of a heat conductive graphite sheet, which generates high heat when sandwiched between a semiconductor device in an electronic device / high-speed wireless communication device and a heat-dissipating metal substrate. Heat can be transferred to the entire conductive heat conductive sheet with high thermal conductivity, and heat can be dissipated through the conductive heat conductive sheet to the heat-dissipating metal substrate and housing. By having a low electrical resistance value without damaging the characteristics, the distortion characteristics of high-frequency FET semiconductor devices in high-speed wireless communication devices and the like are improved, the amplification gain is increased, and the vias are increased. Voltage - due improved drain current characteristics, the oscillation phenomenon without an effect that can satisfy the low-frequency to high-frequency characteristics of the electronic devices and high-speed wireless communications device.

以下に、本発明の実施の形態について、図面を参照しながら説明する。   Embodiments of the present invention will be described below with reference to the drawings.

図1は本発明の実施の形態1における貫通スリット1を配した導電性熱伝導シート2の平面図である。   FIG. 1 is a plan view of a conductive heat conductive sheet 2 provided with a through slit 1 according to Embodiment 1 of the present invention.

図2は本発明の実施の形態1、2における貫通スリット1を配した熱伝導性グラファイトシート3の、貫通スリット1の部分拡大図である。   FIG. 2 is a partially enlarged view of the through slit 1 of the thermally conductive graphite sheet 3 provided with the through slit 1 in the first and second embodiments of the present invention.

図3は本発明の実施の形態1、2における貫通スリット1の内面を含む熱伝導性グラファイトシート3の全面に導電体4を配した状態を示すスリット1の部分拡大図である。   FIG. 3 is a partially enlarged view of the slit 1 showing a state in which the conductor 4 is arranged on the entire surface of the thermally conductive graphite sheet 3 including the inner surface of the through slit 1 in the first and second embodiments of the present invention.

図4は、熱伝導性グラファイトシート3を貫通したスリットを、中央部付近から周辺部に向かって放射状スリット5として設けた導電性熱伝導シート2の平面図である。   FIG. 4 is a plan view of the conductive heat conductive sheet 2 provided with slits penetrating the heat conductive graphite sheet 3 as radial slits 5 from the vicinity of the central portion toward the peripheral portion.

(実施の形態1)
まず、ポリイミドフィルムなどの有機高分子フィルムを還元性または中性雰囲気下で熱分解し、結晶配向性に優れた熱伝導率の高いグラファイトシートを作成する。このグラファイトシートの熱伝導率は700W/mK、抵抗値は約1.5Ωであった。
(Embodiment 1)
First, an organic polymer film such as a polyimide film is pyrolyzed in a reducing or neutral atmosphere to produce a graphite sheet having excellent crystal orientation and high thermal conductivity. The graphite sheet had a thermal conductivity of 700 W / mK and a resistance value of about 1.5Ω.

次に図1〜図3に示すように、この結晶高配向性が高く、高い熱伝導率を有する熱伝導性グラファイトシート3に、金型打ち抜きで外形を打ち抜くと同時に熱伝導性グラファイトシート3を貫通したスリット1をシートの長手方向に形成する。さらに、貫通したスリット1の内面を含む熱伝導性グラファイトシート3の全面に、一例として通常の真空蒸着装置を用いて熱伝導性グラファイトシート3の片面ずつ表裏2回にわたってCuを真空蒸着処理することにより、導電体4を熱伝導性グラファイトシート3の全面に蒸着する。   Next, as shown in FIGS. 1 to 3, the thermally conductive graphite sheet 3 having a high crystal orientation and a high thermal conductivity is punched into the outer shape by die punching, and at the same time, the thermally conductive graphite sheet 3 is formed. The penetrating slit 1 is formed in the longitudinal direction of the sheet. Furthermore, Cu is vacuum-deposited on the entire surface of the thermally conductive graphite sheet 3 including the inner surface of the slit 1 penetrating the front and back surfaces of the thermally conductive graphite sheet 3 one by one using, for example, a normal vacuum deposition apparatus. Thus, the conductor 4 is deposited on the entire surface of the heat conductive graphite sheet 3.

この導電体4を配した構成の導電性熱伝導シート2の熱伝導率並びに抵抗値を測定したところ、熱伝導率は650W/mKとCu蒸着前の熱伝導率とほとんど変わらず、また抵抗値に関しても約0.1Ωと極めて低い電気抵抗値が得られた。   When the heat conductivity and resistance value of the conductive heat conductive sheet 2 having the structure in which the conductor 4 is arranged are measured, the heat conductivity is 650 W / mK, which is almost the same as the heat conductivity before Cu deposition, and the resistance value. Also, an extremely low electric resistance value of about 0.1Ω was obtained.

この導電性熱伝導シート2を高速無線通信装置の半導体デバイスの放熱に用いたところ、従来の導電体を形成していない熱伝導性グラファイトシートを用いた場合に比べて伝送信号における歪み特性が良化し、また増幅利得の増加、バイアス電圧−ドレイン電流特性の良化により、発振現象も無く、電子機器・高速無線通信装置の低周波数〜高周波数特性を満足することができた。   When this conductive heat conductive sheet 2 is used for heat dissipation of the semiconductor device of the high-speed wireless communication apparatus, the distortion characteristic in the transmission signal is better than when a conventional heat conductive graphite sheet not forming a conductor is used. In addition, the increase in amplification gain and the improvement in the bias voltage-drain current characteristics have prevented the oscillation phenomenon and satisfied the low frequency to high frequency characteristics of the electronic equipment / high-speed wireless communication device.

(実施の形態2)
貫通スリットを熱伝導性グラファイトシート3の中央部から周辺部に向かって放射状に配置した以外は実施の形態1と同様にして図4に示すような導電性熱伝導シート2を作成する。
(Embodiment 2)
A conductive heat conductive sheet 2 as shown in FIG. 4 is produced in the same manner as in the first embodiment except that the through slits are arranged radially from the central part to the peripheral part of the heat conductive graphite sheet 3.

この導電性熱伝導シート2の熱伝導率は約680W/mK、電気抵抗値は約0.2Ωであった。   This conductive heat conductive sheet 2 had a thermal conductivity of about 680 W / mK and an electric resistance value of about 0.2Ω.

この導電性熱伝導シート2を、実施の形態1と同様に高速無線通信装置の半導体デバイスの放熱に用いたところ、実施の形態1と同様に発振現象も無く、電子機器・高速無線通信装置の低周波数〜高周波数特性を満足することができた。   When this conductive heat conductive sheet 2 is used for heat dissipation of the semiconductor device of the high-speed wireless communication apparatus as in the first embodiment, there is no oscillation phenomenon as in the first embodiment, and there is no oscillation phenomenon in the electronic equipment / high-speed wireless communication apparatus. Low frequency to high frequency characteristics could be satisfied.

なお、上記実施の形態1、2ではCuを用いて、蒸着により導電体4を形成したが、導電体4としてはCu以外にAu、Ag、Niなどの金属単体、又はこれらの金属の複合体を蒸着にて形成しても同様の効果が得られる。   In the first and second embodiments, Cu is used to form the conductor 4 by vapor deposition, but the conductor 4 is not only Cu but also a single metal such as Au, Ag, Ni, or a composite of these metals. The same effect can be obtained by forming by vapor deposition.

さらに導電体4の形成方法としては、蒸着以外にスパッタや鍍金加工処理を用いた場合においても、熱伝導性グラファイトシートの高い熱伝導特性を確保しつつ、低い電気抵抗値特性を得ることができる。   Furthermore, as a method of forming the conductor 4, even when sputtering or plating processing is used in addition to vapor deposition, it is possible to obtain a low electric resistance value characteristic while ensuring the high heat conduction characteristic of the heat conductive graphite sheet. .

なお、本実施の形態1、2では結晶高配向性の高熱伝導率のグラファイトシートを用いたが、これに限らず例えば天然黒鉛を原料とする膨張黒鉛からなるグラファイトシートを用いた場合でも熱伝導率は劣るが、抵抗値は同様に低減することができる。   In the first and second embodiments, a high thermal conductivity graphite sheet with high crystal orientation is used. However, the present invention is not limited to this. For example, even when a graphite sheet made of expanded graphite made from natural graphite is used, heat conduction is performed. Although the rate is inferior, the resistance can be reduced as well.

本発明にかかる導電性熱伝導シートは、熱伝導性グラファイトシートを貫通したスリットを配し、且つ、貫通したスリットの内面を含む熱伝導性グラファイトシートの全面に、導電体を配した構成とすることにより、高い熱伝導率を損なうことなく低い抵抗値を有する導電性熱伝導シートであり、電子機器や高速無線通信装置の半導体デバイスの放熱などの用途に有用である。   The conductive heat conductive sheet according to the present invention has a configuration in which a slit penetrating the heat conductive graphite sheet is disposed and a conductor is disposed on the entire surface of the heat conductive graphite sheet including the inner surface of the slit. Thus, it is a conductive heat conductive sheet having a low resistance value without impairing high thermal conductivity, and is useful for applications such as heat dissipation of semiconductor devices of electronic devices and high-speed wireless communication devices.

本発明の実施の形態1における導電性熱伝導シートの平面図The top view of the electroconductive heat conductive sheet in Embodiment 1 of this invention 同貫通スリットの部分拡大図Partial enlarged view of the through slit 同貫通スリットの内面を含む熱伝導性グラファイトシートの全面に導電体を配した貫通スリットの部分拡大図Partial enlarged view of the through slit in which a conductor is arranged on the entire surface of the thermally conductive graphite sheet including the inner surface of the through slit. 本発明の実施の形態2における導電性熱伝導シートの平面図The top view of the electroconductive heat conductive sheet in Embodiment 2 of this invention 従来の熱伝導性シートの平面図Plan view of conventional thermal conductive sheet 従来の熱伝導性シートの使用状態を示す正面図The front view which shows the use condition of the conventional heat conductive sheet

符号の説明Explanation of symbols

1 貫通スリット
2 導電性熱伝導シート
3 熱伝導性グラファイトシート
4 導電体
5 放射状スリット
6 熱伝導性シート
7 固定ネジ用切り欠き
8 放熱性金属基板
9 固定ネジ
10 金属基板
11 端子
12 半導体デバイス
DESCRIPTION OF SYMBOLS 1 Through slit 2 Conductive heat conductive sheet 3 Thermal conductive graphite sheet 4 Conductor 5 Radial slit 6 Thermal conductive sheet 7 Notch for fixing screw 8 Heat radiation metal substrate 9 Fixing screw 10 Metal substrate 11 Terminal 12 Semiconductor device

Claims (4)

熱伝導性グラファイトシートに、前記熱伝導性グラファイトシートを貫通したスリットを配し、且つ、前記貫通したスリット内面を含む前記熱伝導性グラファイトシートの全面に導電体を配した導電性熱伝導シート。 The conductive heat conductive sheet which arranged the slit which penetrated the said heat conductive graphite sheet in the heat conductive graphite sheet, and arranged the conductor on the whole surface of the said heat conductive graphite sheet containing the said slit internal surface penetrated. 熱伝導性グラファイトシートを貫通するスリットは、前記熱伝導性グラファイトシート表面の長手方向に配したものである請求項1に記載の導電性熱伝導シート。 The conductive heat conductive sheet according to claim 1, wherein the slits penetrating the heat conductive graphite sheet are arranged in a longitudinal direction of the surface of the heat conductive graphite sheet. 熱伝導性グラファイトシートを貫通するスリットは、前記熱伝導性グラファイトシートの中央部付近から周辺部に向かって放射状に配したものである請求項1に記載の導電性熱伝導シート。 The conductive heat conductive sheet according to claim 1, wherein the slits penetrating the heat conductive graphite sheet are arranged radially from the vicinity of the central portion of the heat conductive graphite sheet toward the peripheral portion. 導電体が、Au、Ag、Cu、Niのうちのいずれか一つ、又はこれらの複合体をスパッタ、蒸着、又は、鍍金により形成したものである請求項1に記載の導電性熱伝導シート。 The conductive heat conductive sheet according to claim 1, wherein the conductor is one of Au, Ag, Cu, and Ni, or a composite thereof formed by sputtering, vapor deposition, or plating.
JP2004279061A 2004-09-27 2004-09-27 Conductive thermally conductive sheet Pending JP2006093526A (en)

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US11264655B2 (en) 2009-05-18 2022-03-01 Gentherm Incorporated Thermal management system including flapper valve to control fluid flow for thermoelectric device
JP2011018715A (en) * 2009-07-08 2011-01-27 Kyocera Corp Graphite sheet
US10337770B2 (en) 2011-07-11 2019-07-02 Gentherm Incorporated Thermoelectric-based thermal management of electrical devices
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JP2013191830A (en) * 2012-02-15 2013-09-26 Panasonic Corp Graphite structure, and electronic device including the same
US10686232B2 (en) 2013-01-14 2020-06-16 Gentherm Incorporated Thermoelectric-based thermal management of electrical devices
US10784546B2 (en) 2013-01-30 2020-09-22 Gentherm Incorporated Thermoelectric-based thermal management system
JP2016021358A (en) * 2014-06-16 2016-02-04 東芝ライテック株式会社 Lamp device and lighting device
CN106717139A (en) * 2014-09-12 2017-05-24 詹思姆公司 Graphite thermoelectric and/or resistive thermal management systems and methods
CN106717139B (en) * 2014-09-12 2019-07-12 詹思姆公司 Graphite thermoelectricity and/or resistance heat management system and method
US10700393B2 (en) 2014-09-12 2020-06-30 Gentherm Incorporated Graphite thermoelectric and/or resistive thermal management systems and methods
US11993132B2 (en) 2018-11-30 2024-05-28 Gentherm Incorporated Thermoelectric conditioning system and methods
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